Design of S Parameters for Various Filters
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Analysis of Microwave Networks
! a b L • ! t • h ! 9/ a 9 ! a b • í { # $ C& $'' • L C& $') # * • L 9/ a 9 + ! a b • C& $' D * $' ! # * Open ended microstrip line V + , I + S Transmission line or waveguide V − , I − Port 1 Port Substrate Ground (a) (b) 9/ a 9 - ! a b • L b • Ç • ! +* C& $' C& $' C& $ ' # +* & 9/ a 9 ! a b • C& $' ! +* $' ù* # $ ' ò* # 9/ a 9 1 ! a b • C ) • L # ) # 9/ a 9 2 ! a b • { # b 9/ a 9 3 ! a b a w • L # 4!./57 #) 8 + 8 9/ a 9 9 ! a b • C& $' ! * $' # 9/ a 9 : ! a b • b L+) . 8 5 # • Ç + V = A V + BI V 1 2 2 V 1 1 I 2 = 0 V 2 = 0 V 2 I 1 = CV 2 + DI 2 I 2 9/ a 9 ; ! a b • !./5 $' C& $' { $' { $ ' [ 9/ a 9 ! a b • { • { 9/ a 9 + ! a b • [ 9/ a 9 - ! a b • C ) • #{ • L ) 9/ a 9 ! a b • í !./5 # 9/ a 9 1 ! a b • C& { +* 9/ a 9 2 ! a b • I • L 9/ a 9 3 ! a b # $ • t # ? • 5 @ 9a ? • L • ! # ) 9/ a 9 9 ! a b • { # ) 8 -
Scattering Parameters
Scattering Parameters Motivation § Difficult to implement open and short circuit conditions in high frequencies measurements due to parasitic L’s and C’s § Potential stability problems for active devices when measured in non-operating conditions § Difficult to measure V and I at microwave frequencies § Direct measurement of amplitudes/ power and phases of incident and reflected traveling waves 1 Prof. Andreas Weisshaar ― ECE580 Network Theory - Guest Lecture ― Fall Term 2011 Scattering Parameters Motivation § Difficult to implement open and short circuit conditions in high frequencies measurements due to parasitic L’s and C’s § Potential stability problems for active devices when measured in non-operating conditions § Difficult to measure V and I at microwave frequencies § Direct measurement of amplitudes/ power and phases of incident and reflected traveling waves 2 Prof. Andreas Weisshaar ― ECE580 Network Theory - Guest Lecture ― Fall Term 2011 1 General Network Formulation V + I + 1 1 Z Port Voltages and Currents 0,1 I − − + − + − 1 V I V = V +V I = I + I 1 1 k k k k k k V1 port 1 + + V2 I2 I2 V2 Z + N-port 0,2 – port 2 Network − − V2 I2 + VN – I Characteristic (Port) Impedances port N N + − + + VN I N Vk Vk Z0,k = = − + − Z0,N Ik Ik − − VN I N Note: all current components are defined positive with direction into the positive terminal at each port 3 Prof. Andreas Weisshaar ― ECE580 Network Theory - Guest Lecture ― Fall Term 2011 Impedance Matrix I1 ⎡V1 ⎤ ⎡ Z11 Z12 Z1N ⎤ ⎡ I1 ⎤ + V1 Port 1 ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ - V2 Z21 Z22 Z2N I2 ⎢ ⎥ = ⎢ ⎥ ⎢ ⎥ I2 + ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ V2 Port 2 ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ - V Z Z Z I N-port ⎣ N ⎦ ⎣ N1 N 2 NN ⎦ ⎣ N ⎦ Network I N [V]= [Z][I] V + Port N N + - V Port i i,oc- Open-Circuit Impedance Parameters Port j Ij N-port Vi,oc Zij = Network I j Port N Ik =0 for k≠ j 4 Prof. -
Brief Study of Two Port Network and Its Parameters
© 2014 IJIRT | Volume 1 Issue 6 | ISSN : 2349-6002 Brief study of two port network and its parameters Rishabh Verma, Satya Prakash, Sneha Nivedita Abstract- this paper proposes the study of the various ports (of a two port network. in this case) types of parameters of two port network and different respectively. type of interconnections of two port networks. This The Z-parameter matrix for the two-port network is paper explains the parameters that are Z-, Y-, T-, T’-, probably the most common. In this case the h- and g-parameters and different types of relationship between the port currents, port voltages interconnections of two port networks. We will also discuss about their applications. and the Z-parameter matrix is given by: Index Terms- two port network, parameters, interconnections. where I. INTRODUCTION A two-port network (a kind of four-terminal network or quadripole) is an electrical network (circuit) or device with two pairs of terminals to connect to external circuits. Two For the general case of an N-port network, terminals constitute a port if the currents applied to them satisfy the essential requirement known as the port condition: the electric current entering one terminal must equal the current emerging from the The input impedance of a two-port network is given other terminal on the same port. The ports constitute by: interfaces where the network connects to other networks, the points where signals are applied or outputs are taken. In a two-port network, often port 1 where ZL is the impedance of the load connected to is considered the input port and port 2 is considered port two. -
Scattering Parameters - Wikipedia, the Free Encyclopedia Page 1 of 13
Scattering parameters - Wikipedia, the free encyclopedia Page 1 of 13 Scattering parameters From Wikipedia, the free encyclopedia Scattering parameters or S-parameters (the elements of a scattering matrix or S-matrix ) describe the electrical behavior of linear electrical networks when undergoing various steady state stimuli by electrical signals. The parameters are useful for electrical engineering, electronics engineering, and communication systems design, and especially for microwave engineering. The S-parameters are members of a family of similar parameters, other examples being: Y-parameters,[1] Z-parameters,[2] H- parameters, T-parameters or ABCD-parameters.[3][4] They differ from these, in the sense that S-parameters do not use open or short circuit conditions to characterize a linear electrical network; instead, matched loads are used. These terminations are much easier to use at high signal frequencies than open-circuit and short-circuit terminations. Moreover, the quantities are measured in terms of power. Many electrical properties of networks of components (inductors, capacitors, resistors) may be expressed using S-parameters, such as gain, return loss, voltage standing wave ratio (VSWR), reflection coefficient and amplifier stability. The term 'scattering' is more common to optical engineering than RF engineering, referring to the effect observed when a plane electromagnetic wave is incident on an obstruction or passes across dissimilar dielectric media. In the context of S-parameters, scattering refers to the way in which the traveling currents and voltages in a transmission line are affected when they meet a discontinuity caused by the insertion of a network into the transmission line. This is equivalent to the wave meeting an impedance differing from the line's characteristic impedance. -
Scattering Parameters
Chapter 1 Scattering Parameters Scattering parameters are a powerful analysis tool, providing much insight on the electrical behavior of circuits and devices at, and beyond microwave frequencies. Most vector network analyzers are designed with the built-in capability to display S parameters. To an experienced engineer, S parameter plots can be used to quickly identify problems with a measurement. A good understanding of their precise meaning is therefore essential. Talk about philosophy behind these derivations in order to place reader into context. Talk about how the derivations will valid for arbitrary complex reference impedances (once everything is hammered out). Talk about the view of pseudo-waves and the mocking of waveguide theory mentionned on p. 535 of [1]. Talk about alterantive point of view where S-parameters are a conceptual tool that can be used to look at real traveling waves, but don’t have to. Call pseudo-waves: traveling waves of a conceptual measurement setup. Is the problem of connecting a transmission line of different ZC than was used for the measurement that it may alter the circuit’s response (ex: might cause different modes to propagate), and thus change the network?? Question: forward/reverse scattering parameters: Is that when the input (port 1) is excited, or simly incident vs. reflected/transmitted??? The reader is referred to [2][1][3] for a more general treatment, including non-TEM modes. Verify this statement, and try to include this if possible. Traveling Waves And Pseudo-Waves Verify the following statements with the theory in [1]. Link to: Scattering and pseudo-scattering matrices. -
Authors Benjamin J
Authors Benjamin J. Chapman, Eric I. Rosenthal, Joseph Kerckhoff, Bradley A. Moores, Leila R. Vale, J. A. B. Mates, Kevin Lalumière, Alexandre Blais, and K.W. Lehnert This article is available at CU Scholar: https://scholar.colorado.edu/jila_facpapers/2 PHYSICAL REVIEW X 7, 041043 (2017) Widely Tunable On-Chip Microwave Circulator for Superconducting Quantum Circuits † Benjamin J. Chapman,1,* Eric I. Rosenthal,1 Joseph Kerckhoff,1, Bradley A. Moores,1 Leila R. Vale,2 ‡ J. A. B. Mates,2 Gene C. Hilton,2 Kevin Lalumi`ere,3, Alexandre Blais,3,4 and K. W. Lehnert1 1JILA, National Institute of Standards and Technology and the University of Colorado, Boulder, Colorado 80309, USA and Department of Physics, University of Colorado, Boulder, Colorado 80309, USA 2National Institute of Standards and Technology, Boulder, Colorado 80305, USA 3D´epartement de Physique, Universit´e de Sherbrooke, Sherbrooke, Qu´ebec J1K 2R1, Canada 4Canadian Institute for Advanced Research, Toronto, Ontario M5G 1Z8, Canada (Received 13 July 2017; published 22 November 2017) We report on the design and performance of an on-chip microwave circulator with a widely (GHz) tunable operation frequency. Nonreciprocity is created with a combination of frequency conversion and delay, and requires neither permanent magnets nor microwave bias tones, allowing on-chip integration with other superconducting circuits without the need for high-bandwidth control lines. Isolation in the device exceeds 20 dB over a bandwidth of tens of MHz, and its insertion loss is small, reaching as low as 0.9 dB at select operation frequencies. Furthermore, the device is linear with respect to input power for signal powers up to hundreds of fW (≈103 circulating photons), and the direction of circulation can be dynamically reconfigured. -
Solutions to Problems
Solutions to Problems Chapter l 2.6 1.1 (a)M-IC3T3/2;(b)M-IL-3y4J2; (c)ML2 r 2r 1 1.3 (a) 102.5 W; (b) 11.8 V; (c) 5900 W; (d) 6000 w 1.4 Two in series connected in parallel with two others. The combination connected in series with the fifth 1.5 6 V; 16 W 1.6 2 A; 32 W; 8 V 1.7 ~ D.;!b n 1.8 in;~ n 1.9 67.5 A, 82.5 A; No.1, 237.3 V; No.2, 236.15 V; No. 3, 235.4 V; No. 4, 235.65 V; No.5, 236.7 V Chapter 2 2.1 3il + 2i2 = 0; Constraint equation, 15vl - 6v2- 5v3- 4v4 = 0 i 1 - i2 = 5; i 1 = 2 A; i2 = - 3 A -6v1 + l6v2- v3- 2v4 = 0 2.2 va\+va!=-5;va=2i2;va=-3il; -5vl- v2 + 17v3- 3v4 = 0 -4vl - 2vz- 3v3 + l8v4 = 0 i1 = 2 A;i2 = -3 A 2.7 (a) 1 V ±and 2.4 .!?.; (b) 10 V +and 2.3 v13 + v2 2 = 0 (from supernode 1 + 2); 10 n; (c) 12 V ±and 4 n constraint equation v1- v2 = 5; v1 = 2 V; v2=-3V 2.8 3470 w 2.5 2.9 384 000 w 2.10 (a) 1 .!?., lSi W; (b) Ra = 0 (negative values of Ra not considered), 162 W 2.11 (a) 8 .!?.; (b),~ W; (c) 4 .!1. 2.12 ! n. By the principle of superposition if 1 A is fed into any junction and taken out at infinity then the currents in the four branches adjacent to the junction must, by symmetry, be i A. -
S-Parameter Techniques – HP Application Note 95-1
H Test & Measurement Application Note 95-1 S-Parameter Techniques Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters 5. Amplifier Design using Scattering Parameters 6. Measurement of S-Parameters 7. Narrow-Band Amplifier Design 8. Broadband Amplifier Design 9. Stability Considerations and the Design of Reflection Amplifiers and Oscillators Appendix A. Additional Reading on S-Parameters Appendix B. Scattering Parameter Relationships Appendix C. The Software Revolution Relevant Products, Education and Information Contacting Hewlett-Packard © Copyright Hewlett-Packard Company, 1997. 3000 Hanover Street, Palo Alto California, USA. H Test & Measurement Application Note 95-1 S-Parameter Techniques Foreword HEWLETT-PACKARD JOURNAL This application note is based on an article written for the February 1967 issue of the Hewlett-Packard Journal, yet its content remains important today. S-parameters are an Cover: A NEW MICROWAVE INSTRUMENT SWEEP essential part of high-frequency design, though much else MEASURES GAIN, PHASE IMPEDANCE WITH SCOPE OR METER READOUT; page 2 See Also:THE MICROWAVE ANALYZER IN THE has changed during the past 30 years. During that time, FUTURE; page 11 S-PARAMETERS THEORY AND HP has continuously forged ahead to help create today's APPLICATIONS; page 13 leading test and measurement environment. We continuously apply our capabilities in measurement, communication, and computation to produce innovations that help you to improve your business results. In wireless communications, for example, we estimate that 85 percent of the world’s GSM (Groupe Speciale Mobile) telephones are tested with HP instruments. Our accomplishments 30 years hence may exceed our boldest conjectures. -
Introduction to RF Measurements and Instrumentation
Introduction to RF measurements and instrumentation Daniel Valuch, CERN BE/RF, [email protected] Purpose of the course • Introduce the most common RF devices • Introduce the most commonly used RF measurement instruments • Explain typical RF measurement problems • Learn the essential RF work practices • Teach you to measure RF structures and devices properly, accurately and safely to you and to the instruments Introduction to RF measurements and instrumentation 2 Daniel Valuch CERN BE/RF ([email protected]) Purpose of the course • What are we NOT going to do… But we still need a little bit of math… Introduction to RF measurements and instrumentation 3 Daniel Valuch CERN BE/RF ([email protected]) Purpose of the course • We will rather focus on: Instruments: …and practices: Methods: Introduction to RF measurements and instrumentation 4 Daniel Valuch CERN BE/RF ([email protected]) Transmission line theory 101 • Transmission lines are defined as waveguiding structures that can support transverse electromagnetic (TEM) waves or quasi-TEM waves. • For purpose of this course: The device which transports RF power from the source to the load (and back) Introduction to RF measurements and instrumentation 5 Daniel Valuch CERN BE/RF ([email protected]) Transmission line theory 101 Transmission line Source Load Introduction to RF measurements and instrumentation 6 Daniel Valuch CERN BE/RF ([email protected]) Transmission line theory 101 • The telegrapher's equations are a pair of linear differential equations which describe the voltage (V) and current (I) on an electrical transmission line with distance and time. • The transmission line model represents the transmission line as an infinite series of two-port elementary components, each representing an infinitesimally short segment of the transmission line: Distributed resistance R of the conductors (Ohms per unit length) Distributed inductance L (Henries per unit length). -
2-PORT CIRCUITS Objectives
Notes for course EE1.1 Circuit Analysis 2004-05 TOPIC 10 – 2-PORT CIRCUITS Objectives: . Introduction . Re-examination of 1-port sub-circuits . Admittance parameters for 2-port circuits . Gain and port impedance from 2-port admittance parameters . Impedance parameters for 2-port circuits . Hybrid parameters for 2-port circuits 1 INTRODUCTION Amplifier circuits are found in a large number of appliances, including radios, TV, video, audio, telephony (mobile and fixed), communications and instrumentation. The applications of amplifiers are practically unlimited. It is clear that an amplifier circuit has an input signal and an output signal. This configuration is represented by a device called a 2-port circuit, which has an input port for the input signal and an output port for the output signal. In this topic, we look at circuits from this point of view. To develop the idea of 2-port circuits, consider a general 1-port sub-circuit of the type we are very familiar with: The basic passive elements, resistor, inductor and capacitor, and the independent sources, are the simplest 1-port sub-circuits. A more general 1-port sub-circuit contains any number of interconnected resistors, capacitors, inductors, and sources and could have many nodes. Sometimes, perhaps when we have finished designing a circuit, we become less interested in the detail of the elements interconnected in the circuit and are happy to represent the 1-port circuit by how it behaves at its terminals. This is achieved by use of circuit analysis to determine the relationship between the voltage V1 across the terminals and the current I1 flowing through the terminals which leads to a Thevenin or Norton equivalent circuit, which can be used as a simpler replacement for the original complex circuit. -
Doppler-Based Acoustic Gyrator
applied sciences Article Doppler-Based Acoustic Gyrator Farzad Zangeneh-Nejad and Romain Fleury * ID Laboratory of Wave Engineering, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland; farzad.zangenehnejad@epfl.ch * Correspondence: romain.fleury@epfl.ch; Tel.: +41-412-1693-5688 Received: 30 May 2018; Accepted: 2 July 2018; Published: 3 July 2018 Abstract: Non-reciprocal phase shifters have been attracting a great deal of attention due to their important applications in filtering, isolation, modulation, and mode locking. Here, we demonstrate a non-reciprocal acoustic phase shifter using a simple acoustic waveguide. We show, both analytically and numerically, that when the fluid within the waveguide is biased by a time-independent velocity, the sound waves travelling in forward and backward directions experience different amounts of phase shifts. We further show that the differential phase shift between the forward and backward waves can be conveniently adjusted by changing the imparted bias velocity. Setting the corresponding differential phase shift to 180 degrees, we then realize an acoustic gyrator, which is of paramount importance not only for the network realization of two port components, but also as the building block for the construction of different non-reciprocal devices like isolators and circulators. Keywords: non-reciprocal acoustics; gyrators; phase shifters; Doppler effect 1. Introduction Microwave phase shifters are two-port components that provide an arbitrary and variable transmission phase angle with low insertion loss [1–3]. Since their discovery in the 19th century, such phase shifters have found important applications in devices such as phased array antennas and receivers [4,5], beam forming and steering networks [6,7], measurement and testing systems [8,9], filters [10,11], modulators [12,13], frequency up-convertors [14], power flow controllers [15], interferometers [16], and mode lockers [17]. -
Measurement of Transistor Scattering Parameters NATIONAL BUREAU of STANDARDS
Allia3 DflTDbS NAFL INST OF STANDARDS & TECH R.I.C. A1 11 03087069 Rogers, George J/Measurement of translst QC100 .U57 NO.400-5, 1975 C.2 NBS-PUB-C J NBS SPECIAL PUBLICATION 400-5 U.S. DEPARTMENT OF COMMERCE / National Bureau of Standards semiconductor Measurement Technology: Measurement of Transistor Scattering Parameters NATIONAL BUREAU OF STANDARDS The National Bureau of Standards' was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (I) a basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Institute for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scientific community, industry, and commerce. The Institute consists of a Center for Radiation Research, an Office of Meas- urement