Overview of the Current State of Gallium Arsenide-Based Solar Cells
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Hayabusa2 and the Formation of the Solar System PPS02-25
PPS02-25 JpGU-AGU Joint Meeting 2017 Hayabusa2 and the formation of the Solar System *Sei-ichiro WATANABE1,2, Hayabusa2 Science Team2 1. Division of Earth and Planetary Sciences, Graduate School of Science, Nagoya University, 2. JAXA/ISAS Explorations of small solar system bodies bring us direct and unique information about the formation and evolution of the Solar system. Asteroids may preserve accretion processes of planetesimals or pebbles, a sequence of destructive events induced by the gas-driven migration of giant planets, and hydrothermal processes on the parent bodies. After successful small-body missions like Rosetta to comet 67P/Churyumov-Gerasimenko, Dawn to Vesta and Ceres, and New Horizons to Pluto, two spacecraft Hayabusa2 and OSIRIS-REx are now traveling to dark primitive asteroids.The Hayabusa2 spacecraft journeys to a C-type near-earth asteroid (162173) Ryugu (1999 JU3) to conduct detailed remote sensing observations and return samples from the surface. The Haybusa2 spacecraft developed by Japan Aerospace Exploration Agency (JAXA) was successfully launched on 3 Dec. 2014 by the H-IIA Launch Vehicle and performed an Earth swing-by on 3 Dec. 2015 to set it on a course toward its target. The spacecraft will reach Ryugu in the summer of 2018, observe the asteroid for 18 months, and sample surface materials from up to three different locations. The samples will be delivered to the Earth in Nov.-Dec. 2020. Ground-based observations have obtained a variety of optical reflectance spectra for Ryugu. Some reported the 0.7 μm absorption feature and steep slope in the short wavelength region, suggesting hydrated minerals. -
Proceedings of Spie
Volume holographic lens spectrum-splitting photovoltaic system for high energy yield with direct and diffuse solar illumination Item Type Article Authors Chrysler, Benjamin D.; Wu, Yuechen; Kostuk, Raymond K.; Yu, Zhengshan Citation Benjamin D. Chrysler, Yuechen Wu, Zhengshan Yu, Raymond K. Kostuk, "Volume holographic lens spectrum-splitting photovoltaic system for high energy yield with direct and diffuse solar illumination", Proc. SPIE 10368, Next Generation Technologies for Solar Energy Conversion VIII, 103680G (25 August 2017); doi: 10.1117/12.2273204; https://doi.org/10.1117/12.2273204 DOI 10.1117/12.2273204 Publisher SPIE-INT SOC OPTICAL ENGINEERING Journal NEXT GENERATION TECHNOLOGIES FOR SOLAR ENERGY CONVERSION VIII Rights © 2017 SPIE. Download date 28/09/2021 10:32:44 Item License http://rightsstatements.org/vocab/InC/1.0/ Version Final published version Link to Item http://hdl.handle.net/10150/627188 PROCEEDINGS OF SPIE SPIEDigitalLibrary.org/conference-proceedings-of-spie Volume holographic lens spectrum- splitting photovoltaic system for high energy yield with direct and diffuse solar illumination Benjamin D. Chrysler, Yuechen Wu, Zhengshan Yu, Raymond K. Kostuk Benjamin D. Chrysler, Yuechen Wu, Zhengshan Yu, Raymond K. Kostuk, "Volume holographic lens spectrum-splitting photovoltaic system for high energy yield with direct and diffuse solar illumination," Proc. SPIE 10368, Next Generation Technologies for Solar Energy Conversion VIII, 103680G (25 August 2017); doi: 10.1117/12.2273204 Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 3/30/2018 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use Volume holographic lens spectrum-splitting photovoltaic system for high energy yield with direct and diffuse solar illumination Benjamin D. -
New Voyage to Rendezvous with a Small Asteroid Rotating with a Short Period
Hayabusa2 Extended Mission: New Voyage to Rendezvous with a Small Asteroid Rotating with a Short Period M. Hirabayashi1, Y. Mimasu2, N. Sakatani3, S. Watanabe4, Y. Tsuda2, T. Saiki2, S. Kikuchi2, T. Kouyama5, M. Yoshikawa2, S. Tanaka2, S. Nakazawa2, Y. Takei2, F. Terui2, H. Takeuchi2, A. Fujii2, T. Iwata2, K. Tsumura6, S. Matsuura7, Y. Shimaki2, S. Urakawa8, Y. Ishibashi9, S. Hasegawa2, M. Ishiguro10, D. Kuroda11, S. Okumura8, S. Sugita12, T. Okada2, S. Kameda3, S. Kamata13, A. Higuchi14, H. Senshu15, H. Noda16, K. Matsumoto16, R. Suetsugu17, T. Hirai15, K. Kitazato18, D. Farnocchia19, S.P. Naidu19, D.J. Tholen20, C.W. Hergenrother21, R.J. Whiteley22, N. A. Moskovitz23, P.A. Abell24, and the Hayabusa2 extended mission study group. 1Auburn University, Auburn, AL, USA ([email protected]) 2Japan Aerospace Exploration Agency, Kanagawa, Japan 3Rikkyo University, Tokyo, Japan 4Nagoya University, Aichi, Japan 5National Institute of Advanced Industrial Science and Technology, Tokyo, Japan 6Tokyo City University, Tokyo, Japan 7Kwansei Gakuin University, Hyogo, Japan 8Japan Spaceguard Association, Okayama, Japan 9Hosei University, Tokyo, Japan 10Seoul National University, Seoul, South Korea 11Kyoto University, Kyoto, Japan 12University of Tokyo, Tokyo, Japan 13Hokkaido University, Hokkaido, Japan 14University of Occupational and Environmental Health, Fukuoka, Japan 15Chiba Institute of Technology, Chiba, Japan 16National Astronomical Observatory of Japan, Iwate, Japan 17National Institute of Technology, Oshima College, Yamaguchi, Japan 18University of Aizu, Fukushima, Japan 19Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA 20University of Hawai’i, Manoa, HI, USA 21University of Arizona, Tucson, AZ, USA 22Asgard Research, Denver, CO, USA 23Lowell Observatory, Flagstaff, AZ, USA 24NASA Johnson Space Center, Houston, TX, USA 1 Highlights 1. -
III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
crystals Article III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy John Simon *, Kevin L. Schulte, Kelsey A. W. Horowitz, Timothy Remo, David L. Young and Aaron J. Ptak National Renewable Energy Laboratory, Golden, CO 80401, USA; [email protected] (K.L.S.); [email protected] (K.A.W.H.); [email protected] (T.R.); [email protected] (D.L.Y.); [email protected] (A.J.P.) * Correspondence: [email protected] Received: 27 September 2018; Accepted: 14 December 2018; Published: 20 December 2018 Abstract: Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. Keywords: HVPE; III-V semiconductors 1. Introduction Silicon as a semiconductor technology is beginning to run into significant technical limits. The death of Moore’s Law has been predicted for decades, but there is now a clear evidence that transistor size limits have been reached, and improvements are only being realized through increases in complexity and cost. -
An Overview of Hayabusa2 Mission and Asteroid 162173 Ryugu
Asteroid Science 2019 (LPI Contrib. No. 2189) 2086.pdf AN OVERVIEW OF HAYABUSA2 MISSION AND ASTEROID 162173 RYUGU. S. Watanabe1,2, M. Hira- bayashi3, N. Hirata4, N. Hirata5, M. Yoshikawa2, S. Tanaka2, S. Sugita6, K. Kitazato4, T. Okada2, N. Namiki7, S. Tachibana6,2, M. Arakawa5, H. Ikeda8, T. Morota6,1, K. Sugiura9,1, H. Kobayashi1, T. Saiki2, Y. Tsuda2, and Haya- busa2 Joint Science Team10, 1Nagoya University, Nagoya 464-8601, Japan ([email protected]), 2Institute of Space and Astronautical Science, JAXA, Japan, 3Auburn University, U.S.A., 4University of Aizu, Japan, 5Kobe University, Japan, 6University of Tokyo, Japan, 7National Astronomical Observatory of Japan, Japan, 8Research and Development Directorate, JAXA, Japan, 9Tokyo Institute of Technology, Japan, 10Hayabusa2 Project Summary: The Hayabusa2 mission reveals the na- Combined with the rotational motion of the asteroid, ture of a carbonaceous asteroid through a combination global surveys of Ryugu were conducted several times of remote-sensing observations, in situ surface meas- from ~20 km above the sub-Earth point (SEP), includ- urements by rovers and a lander, an active impact ex- ing global mapping from ONC-T (Fig. 1) and TIR, and periment, and analyses of samples returned to Earth. scan mapping from NIRS3 and LIDAR. Descent ob- Introduction: Asteroids are fossils of planetesi- servations covering the equatorial zone were performed mals, building blocks of planetary formation. In partic- from 3-7 km altitudes above SEP. Off-SEP observa- ular carbonaceous asteroids (or C-complex asteroids) tions of the polar regions were also conducted. Based are expected to have keys identifying the material mix- on these observations, we constructed two types of the ing in the early Solar System and deciphering the global shape models (using the Structure-from-Motion origin of water and organic materials on Earth [1]. -
DFB Lasers Between 760 Nm and 16 Μm for Sensing Applications
Sensors 2010, 10, 2492-2510; doi:10.3390/s100402492 OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors Review DFB Lasers Between 760 nm and 16 µm for Sensing Applications Wolfgang Zeller *, Lars Naehle, Peter Fuchs, Florian Gerschuetz, Lars Hildebrandt and Johannes Koeth nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, Germany; E-Mails: [email protected] (L.N.); [email protected] (P.F.); [email protected] (F.G.); [email protected] (L.H.); [email protected] (J.K.) * Author to whom correspondence should be addressed; E-Mail: [email protected]; Tel.: +49-931-90827-10; Fax: +49-931-90827-19. Received: 20 January 2010; in revised form: 22 February 2010 / Accepted: 6 March 2010 / Published: 24 March 2010 Abstract: Recent years have shown the importance of tunable semiconductor lasers in optical sensing. We describe the status quo concerning DFB laser diodes between 760 nm and 3,000 nm as well as new developments aiming for up to 80 nm tuning range in this spectral region. Furthermore we report on QCL between 3 µm and 16 µm and present new developments. An overview of the most interesting applications using such devices is given at the end of this paper. Keywords: DFB; laser; QCL; sensing Classification: PACS 42.55.Px; 42.62.Fi; 42.62.-b 1. Introduction In recent years the importance of lasers in optical sensing has been continuously increasing [1]. Many apparatus use long-known techniques like fluorescence measurements after excitation by photons, e.g., to detect petroleum contamination in soils [2]. -
Initial Analysis Team Introduction
Summary and contents of the press conference Overview • Since the return of the sample in December of last year, curation activities have been conducted for the initial analysis of the sample. • Curation activities are aimed at cataloguing the sample without compromising the scientific value in order to provide information that contributes to further detailed scientific analysis. • Today’s report is that part of the catalogued sample is ready for delivery. Contents 1. Report from the curation team (T. Usui, E. Nakamura, M. Ito) 2. Report from the initial analysis teamS. TachibanaH. YurimotoT. Nakamura T. NoguchiR. OkazakiH. YabutaH. Naraoka 2021/6/17 Hayabusa2 reporter briefing 2 Report from the curation team Tomohiro USUIJAXA Eizo NAKAMURAOkayama University Motoo ITOJAMSTEC Ryugu sample curation work The initial description of the Ryugu sample was performed without removing the sample from the clean chamber, in order to avoid contamination from the global environment CC3-1 Opening the sample container under vacuum environment CC3-2 Sample collection under vacuum CC3-3 Transition from vacuum to nitrogen environment CC4-1 Handling of submillimeter-sized particles CC4-2 Handling / observation / sorting of relatively large particles (> mm) 2021/6/17 Hayabusa2 reporter briefing 4 Achievement of the world’s first sample collection and storage of asteroid samples under vacuum conditions Samples collected under vacuum on December 15, 2020 will not be distributed at this time, but continued to be stored under vacuum (CC3-2) for future -
III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy John Simon, Kelsey Horowitz, Kevin L
III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy John Simon, Kelsey Horowitz, Kevin L. Schulte, Timothy Remo, David L. Young, and Aaron J. Ptak National Renewable Energy Laboratory, Golden, CO 80401, USA Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications in high-value or niche markets due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis using hydride vapor phase epitaxy that has the potential to lower III-V semiconductor deposition costs while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. Silicon as a semiconductor technology is beginning to run into significant technical limits. The death of Moore’s Law has been predicted for decades, but there is now clear evidence that transistor size limits have been reached, and improvements are only being realized through increases in complexity and cost. Si is also rapidly approaching the practical limit for solar conversion efficiency with current best performance sitting at 26.6%1. In contrast to Si, III-V materials such as GaAs and GaInP have some of the best electronic and optical properties of any semiconductor materials. III-Vs have higher electron mobilities than Si, enabling transistors operating at high frequencies for wireless communication applications, and direct bandgaps that lead to extremely efficient absorption and emission of light. -
Gasb Paper R2 ACS Nano
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si Borg, Mattias; Schmid, Heinz; Gooth, Johannes; Rossell, Marta D.; Cutaia, Davide; Knoedler, Moritz; Bologna, Nicolas; Wirths, Stephan; Moselund, Kirsten E.; Riel, Heike Published in: ACS Nano DOI: 10.1021/acsnano.6b04541 2017 Document Version: Peer reviewed version (aka post-print) Link to publication Citation for published version (APA): Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., Bologna, N., Wirths, S., Moselund, K. E., & Riel, H. (2017). High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. ACS Nano, 11(3), 2554- 2560. https://doi.org/10.1021/acsnano.6b04541 Total number of authors: 10 Creative Commons License: Unspecified General rights Unless other specific re-use rights are stated the following general rights apply: Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal Read more about Creative commons licenses: https://creativecommons.org/licenses/ Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. -
IAC-14,A3,P,31X26111 ZEPHYR: a LANDSAILING ROVER FOR
65th International Astronautical Congress, Toronto, Canada. Copyright ©2014 by the International Astronautical Federation. This work was done by employees of the United States government, and no copyright is asserted in the United States. IAC-14,A3,P,31x26111 ZEPHYR: A LANDSAILING ROVER FOR VENUS Geoffrey A. Landis, Steven R. Oleson, David Grantier, and the COMPASS team NASA John Glenn Research Center, 21000 Brookpark Road, Cleveland, OH, 44135 USA [email protected] With an average temperature of 450 °C and a corrosive atmosphere at a pressure of 90 bars, the surface of Venus is the most hostile environment of any planetary surface in the solar system. Exploring the surface of Venus would be an exciting goal, since Venus is a planet with significant scientific mysteries, and interesting geology and geophysics. Technology to operate at the environmental conditions of Venus is under development. A rover on the surface of Venus with capability comparable to the rovers that have been sent to Mars would push the limits of technology in high-temperature electronics, robotics, and robust systems. Such a rover would require the ability to traverse the landscape on extremely low power levels. We have analyzed an innovative concept for a planetary rover: a sail-propelled rover to explore the surface of Venus. Such a rover can be implemented with only two moving parts; the sail, and the steering. Although the surface wind speeds are low (under 1 m/s), at Venus atmospheric density even low wind speeds develop significant force. Under funding by the NASA Innovative Advanced Concepts office, a conceptual design for such a rover has been done. -
Life on Venus, and How to Explore Venus with High-Temperature Electronics Carl-Mikael Zetterling [email protected]
Life on Venus, and How to Explore Venus with High-Temperature Electronics Carl-Mikael Zetterling [email protected] www.WorkingonVenus.se Outline Life on Venus (phosphine in the clouds) Previous missions to Venus Life on Venus (photos from the ground) High temperature electronics Future missions to Venus, including Working on Venus (KTH Project 2014 - 2018) www.WorkingonVenus.se 3 Phosphine gas in the cloud decks of Venus Trace amounts of phosphine (20 ppb, PH3) seen by the ALMA and JCMT telescopes, with millimetre wave spectral detection 4 Phosphine gas in the cloud decks of Venus 5 Phosphine gas in the cloud decks of Venus https://www.nature.com/articles/s41550-020-1174-4 https://arxiv.org/pdf/2009.06499.pdf https://www.nytimes.com/2020/09/14/science/venus-life- clouds.html?smtyp=cur&smid=fb-nytimesfindings https://www.scientificamerican.com/article/is-there-life-on- venus-these-missions-could-find-it/ 6 Did NASA detect phosphine 1978? Pioneer 13 Large Probe Neutral Mass Spectrometer (LNMS) https://www.livescience.com/life-on-venus-pioneer-13.html 7 Why Venus? From Wikimedia Commons, the free media repository Our closest planet, but least known Similar to earth in size and core, has an atmosphere Volcanoes Interesting for climate modeling Venus Long-life Surface Package (ultimate limit of global warming) C. Wilson, C.-M. Zetterling, W. T. Pike IAC-17-A3.5.5, Paper 41353 arXiv:1611.03365v1 www.WorkingonVenus.se 8 Venus Atmosphere 96% CO2 (Also sulphuric acids) Pressure of 92 bar (equivalent to 1000 m water) Temperature 460 °C From Wikimedia Commons, the free media repository Difficult to explore Life is not likely www.WorkingonVenus.se 9 Previous Missions Venera 1 – 16 (1961 – 1983) USSR Mariner 2 (1962) NASA, USA Pioneer (1978 – 1992) NASA, USA Magellan (1989) NASA, USA Venus Express (2005 - ) ESA, Europa From Wikimedia Commons, the free media repository Akatsuki (2010) JAXA, Japan www.WorkingonVenus.se 10 Steps to lunar and planetary exploration: 1. -
Arxiv:1010.1610V1 [Physics.Ins-Det] 8 Oct 2010 Ai Mouneyrac, David Emndtetm Osat O H Rpigadde- and Illumination
Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures David Mouneyrac,1,2 John G. Hartnett,1 Jean-Michel Le Floch,1 Michael E. Tobar,1 Dominique Cros,2 Jerzy Krupka3∗ 1School of Physics, University of Western Australia 35 Stirling Hwy, Crawley 6009 WA Australia 2Xlim, UMR CNRS 6172, 123 av. Albert Thomas, 87060 Limoges Cedex - France 3Institute of Microelectronics and Optoelectronics Department of Electronics, Warsaw University of Technology, Warsaw, Poland (Dated: October 27, 2018) We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semicon- ductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data. PACS numbers: 72.20.Jv 71.20.Nr 77.22.-d I.