IEEE Electron Devices Society New s l e t t e r

EDS’ 50th Anniversary April 2003 Vol. 10, No. 2 ISSN:1074 1879 Dinner/Talk Celebration Editor-in-Chief: Ninoslav D. Stojadinovic Table of Contents • EDS’ 50th Anniversary Dinner/Talk Ce l e b r a t i o n...... 1 Upcoming Technical Meetings ...... 3 • 2003 IITC • 2003 Transducers • 2003 UGIM • 2003 CCD & AIS Request for Your Assistance in Obtaining Past Issues of Transactions on Electronic De v i c e s...... 6 Society News ...... 7 • December 2002 AdCom Meeting Summary • Message from the Editor-in-Chief • 2002 EDS J.J. Ebers Award Winner From left to right: Karl Spear, the Electrochemical Society President, • 2003 EDS J.J. Ebers Award Call for and Steven Hillenius, the Electron Devices Society President, No m i n a t i o n s exchange award plaques to celebrate the 100th Anniversary of • 2002 EDS Distinguished Service Award ECS and the 50th Anniversary of EDS • 2002 EDS Chapter of the Year Award • EDS Members Named Winners of 2003 IEEE Technical Field Awards The Electron Devices Society kicked off its 50th Anniversary with a celebra- • EDS Members Elected to IEEE Grade of Fellow tion dinner on Sunday evening, December 8, 2002 in San Francisco. One • EDS Members Recently Elected to IEEE Senior hundred twenty EDS AdCom members, past EDS award winners, and long- Member Grade standing volunteers attended the event. A 50th Anniversary commemorative • EDS Regions 4-6 Chapters Meeting Summary lapel pin was given to the guests • Final Call for Nominations for the 2003 EDS as a memento of the evening. Graduate Student Fellowship Program The evening began with an • EDS DLS/ Chapter Partners visit China Report exchange of gifts between EDS on WIMNACT 2002in China President Steve Hillenius and • Summary of Changes to the EDS Constitution Electrochemical Society Presi- and Bylaws • IEEE Transactions on Device and Materials dent, Karl Spear. EDS presented Re l i a b i l i t y ECS with a plaque in congratu- lations for its 100th Anniver- Regional & Chapter News ...... 2 0 sary. ECS reciprocated with a EDS Meetings Calendar ...... 2 5 similar recognition. Cary Yang followed with the announcement Renuka P. Jindal presents the pre-Rappaport of the election results for EDS Contributions Welcome Best Paper Award to David B. Tuckerman and R. officers and elected AdCom Readers are encouraged to submit news items con- Fabian W. Pease. cerning the Society and its members. Please send members. your ideas/articles directly to either the Editor-in- (continued on page 2) Chief or appropriate Editor. All contact information is listed on the back cover page. Whenever possi- ble, e-mail is the preferred form of submission. Your Comments Solicited Your comments are most welcome. Please write directly to the Editor-in-Chief Newsletter Deadlines of the Newsletter at the address given on the back cover page. Is s u e Du e Da t e Ja n u a r y October 1st Ap r i l January 1st Ju l y April 1st Oc t o b e r July 1st 2

El e c t r on Devices Society 50th Anniversary (continued from page 1) Pr e s i d e n t Awards Chair Steven J. Hillenius Alfred U. Mac Rae Agere Systems Mac Rae Technologies Tel: +1 610 712 6054 Tel: +1 908 464 6769 E-Mail: [email protected] E-Mail: [email protected]

Vice President Educational Activities Chair Hiroshi Iwai Ilesanmi Adesida Tokyo Institute of Technology University of Illinois Tel: +81 45 924 5471 Tel: +1 217 244 6379 E-Mail: [email protected] E-Mail: [email protected]

Tr e a s u r e r Meetings Chair Paul K. L. Yu Kenneth F. Galloway University of California at San Diego Vanderbilt University Tel: +1 858 534 6180 Tel: +1 615 322 0720 E-Mail: [email protected] E-Mail: [email protected]

Se c r e t a r y Membership Chair John K. Lowell James B. Kuo Co n s u l t a n t National Taiwan University Tel: +1 972 839 4900 Tel: +886 2 236352251 Ext. 338 Guest speakers at the EDS 50TH Anniversary Dinner/Talk Celebration from left E-Mail: [email protected] E-Mail: [email protected] to right: Arlene Santos, Steven Hillenius, Craig Casey, Michael Adler, James Sr. Past President Publications Chair Early, Lew Terman, Jerry Woodall and Richard True. Bruce F. Griffing Renuka P. Jindal Dupont Optolithography University of Louisiana at Lafayette After dinner, master of ceremonies, IEEE President Michael Tel: +1 512 310 6550 Tel: +1 337 482 6570 Adler, introduced Arlene Santos and Craig Casey who were rec- E-Mail: [email protected] E-Mail: [email protected] ognized for both the 50th Anniversary Celebration Committee and the 50th Anniversary History Booklet Committee, respectively. Jr. Past President Regions/Chapters Chair Cary Y. Yang Cor L. Claeys Publications Committee Chair, Renuka Jindal, presented the pre- Santa Clara University IM E C Rappaport Best Paper Award to David B. Tuckerman and R. Fabi- Tel: +1 408 554 6814 Tel: +32 16 281328 an W. Pease for “High Performance Heat Sinking for VLSI“. This E-Mail: [email protected] E-Mail: [email protected] recognition was 22 years overdue. The evening centered on the keynote talk “50 Years in 50 EDS Executive Director IEEE Newsletter Coordinator William F. Van Der Vort Andrea Watson Minutes“ by four distinguished speakers who chronicled the IEEE Operations Center IEEE Operations Center t e c hnological innovation that occurred in Electron Devices dur- 445 Hoes Lane 445 Hoes Lane ing EDS’s first 50 years: In the Beginning: Electron Tubes“ by Piscataway, NJ 08854 Piscataway, NJ 08854 Richard True, “Bipolar Transistors Arrive“ by James Early, “MOS Tel: +1 732 562 3926 Tel: +1 732 562 6345 Fax: +1 732 235 1626 Fax: +1 732 981 1855 Leads IC’s“ by Lew Terman, and “Heterostructures Give New E-Mail: [email protected] E-Mail: [email protected] Structure“ by Jerry Woodall. In addition, the EDS history exhibit was on display at the IEDM from December 8-11. Future preparations for regional anniversary celebrations are in the planning process and will occur in conjunction with region- EDS ADCOM ELECTED MEMBERS-AT-LARGE al chapter meetings. Some of the activities will include: portable version of the EDS History Exhibit, video of the “50 Years in 50 Term Expires: Minutes“ talk, mini-colloquia, and commemorative lapel pins. 20 0 3 20 0 4 *2 0 0 5 I. Adesida (2) M. Estrada del Cueto (1) C.L. Claeys (2) Arlene A. Santos T. Hiramoto (1) K. F. Galloway (2) J.A. Dayton, Jr. (2) National Semiconductor Corp. L. Lunardi (1) S. J. Hillenius (2) M. Fukuma (2) Annapolis, MD, USA A. A. Santos (2) C. Jagadish (2) F.J. Garcia-Sanchez (1) S. C. Sun (2) J. K. O. Sin (1) K. Lee (2) H. S. P. Wong (1) R. Singh (2) J.J. Liou (1) P. K. L. Yu (2) N.D. Stojadinovic (1) M. Ostling (2) D.L. Pulfrey (2)

Number in parenthesis represents term. * Members elected 12/02

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Se n d address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331. Copyright © 2003 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy. 3

Upcoming Technical Meetings

2003 IEEE International Interconnect Technology Conference (IITC)

The sixth annual IITC (Internation- gration and advanced packaging al Interconnect Technology Confer- concepts (flip-chip, chip-on-chip, ence), the premier conference MCM, etc.), novel architectures and dedicated to advanced interconnect advanced interconnect concepts (opti- technology, will be held June 2-4, cal, superconductors, etc.). 2003 at the San Francisco Airport 8. Process Control/Modeling: Hyatt Regency Hotel, conveniently CMP, metal/dielectric deposition located 20 minutes from Silicon Val- and etching processes, PVD, ley or downtown San Francisco. CVD, electroplating, etc. The IITC was established with 9. R e l i a b i l i t y : Metal electromi- the support of the IEEE Electron gration and stress voiding, dielec- Devices Society to provide an inter- tric integrity and mechanical national forum to address intercon- stability, thermal effects, passivation nect issues from a system level issues, interconnect reliability pre- viewpoint. The ever-increasing diction/modeling. demand for higher integrated circuit den- and networking opportunities, and pro- 10 . System-on-a-Chip: I n t e r c o n n e c t , sity and performance has led to a crisis in vide alternative forums to address spe- design and processing of SOC, connectivity, and has shifted the design, cific technological challenges. embedded memory processing, materi- cost, performance and reliability focus to Oral presentations and poster papers als and integration, RF and high fre- interconnects. New materials, architec- offered during the conference span a quency passive components, noise and tures, communication mechanisms and broad range of interconnect technology cross-talk issues. process technologies have arisen to meet topics which include: Given the rapid acceleration of inte- this challenge, and no other semiconduc- grated circuit technology, the last topic tor technology sector has been growing 1. M e t a l l i z a t i o n : Metal deposition provides an important forum for discus- and changing more rapidly. The IITC pro- processes/equipment (PVD, CVD, ALD, sion of the interconnect crisis and poten- vides a unique forum for professionals in electroplating) and materials characteriza- tial paradigm shifts to novel interconnect the semiconductor industry and academia tion with particular emphasis on advanced s c h e m e s . to present and discuss interconnect-relat- aluminum and copper metallization. Professionals involved in interconnect- ed issues and new technology for the fab- 2. Dielectrics: Dielectric materials (low related activities are strongly encouraged rication of advanced interconnects in k, high k, ARCs, etc.) and deposition to participate in this exciting new confer- monolithic ICs, multi-chip modules processes (vapor deposition, CVD, spin- ence. Detailed information can be (MCMs) and state-of-the-art packages. on, etc.) for interconnect applications obtained from the IITC website: The conference provides several 3. Silicide and Salicide: S i l i c i d e h t t p : / / w w w . i e e e . o r g / c o n f e r e n c e / i i t c . venues for learning and professional materials, silicide deposition and forma- For additional information or inquiries interaction. The ever-popular short tion processes, novel gate and regarding supplier exhibits and seminars, course addressing advanced intercon- source/drain structures, contact silicida- please contact Wendy Walker, IITC nect process, design and reliability tion issues, etc. Administrator, Phone: 301-527-0900 issues will once again be offered on 4. C M P / P l a n a r i z a t i o n : Ext. 104, FAX: 301-527-0994, email: the day preceding the conference (June Dielectric/Metal CMP processes, equip- [email protected]. 1), and participation is strongly ment and metrology issues. Alternate pla- Krishna Saraswat, encouraged by those wishing to keep narization techniques. General Co-Chair of the IITC abreast of the latest interconnect tech- 5. Dry Processing: Dry etching of Stanford University nology. Without doubt, the cost and vias, trenches and damascene structures, Stanford, CA, USA performance of ULSI circuits strongly dry etching of metal, dry cleaning process- depend on the capability and produc- es, plasma induced damage, etc. Nobuo Hayasaka tivity of interconnect materials and pro- 6. Process Integration: M u l t i l e v e l General Co-Chair of the IITC cessing equipment. In recognition of interconnect processes, clustered process- Toshiba Corporation this critical role, supplier exhibits and es, novel interconnect structures, Yokohama, Japan seminars are included as an integral contact/via integration, metal barrier and part of the IITC technical program and materials interface issues, etc. Johan Bartha will be held on the first and second 7. Interconnect Systems: In t e r c o n n e c t General Co-Chair of the IITC days of the conference. The exhibits performance modeling and high frequency Technical University of Dresden and seminars offer additional learning characterization, interconnect system inte- Dresden, Germany 4

Transducers '03: The 12th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems

Transducers ‘03: The 12th Back Bay, The Boston Marriott IEEE International Conference Copley Place is an anchor hotel on Solid-State Sensors, Actua- in Boston’s posh 9 1/2 acre tors and Microsystems will be Copley Place development. The held in Boston, Massachu- hotel has easy access to over setts, USA, from June 8 to 12, 200 upscale shops and restau- 2003, under the sponsorship rants, and an 11-screen cinema. of the IEEE Electron Devices Excellent public transportation Society. Transducers ’03 con- connects to downtown and to tinues a series of biennial con- locations throughout Boston. ferences that have been the An exciting program of premier forum for reporting social events for attendees and research results in microsen- guests is planned, taking sors, microactuators, micro- advantage of the culture and electromechanical systems (MEMS), and Future“ The following 3-1/2 days of the history that Boston has to offer. On Sun- microsystems. The Transducers confer- conference will consist of four parallel day, June 8, an evening welcome ence series alternates between North oral sessions of contributed papers r e c e ption at the Marriott conference America, Europe and Asia, and was most describing the latest scientific and techni- headquarters hotel will provide attendees recently held in Munich, Germany, in cal results, supplemented by invited pre- an opportunity to gather informally to June 2001. sentations by world experts in the field, renew old acquaintances and make new Transducers ’03 will include four days plus two extensive sessions of poster pre- ones. Continuing a Transducers tradition of presentations covering: Advances in sentations. It is expected that over 400 of social gatherings in outstanding materials and technologies for microfabri- papers will be presented. venues, Transducers ’03 will hold its Mon- cation; physical, chemical and biological An extensive set of short courses will day evening gathering at the beautiful sensors; micro-analysis systems; microactu- be offered to conference participants. Boston Museum of Fine Arts, located a ators; microfluidic devices and systems; These courses will be held on Sunday, short distance from the Marriott. Tuesday optical MEMS; RF MEMS; nanotechnology June 8, prior to the start of the technical evening is set aside for optional events – for sensors, actuators and microsystems; program. Eight individual courses are in this case a Boston Pops concert in spec- micropackaging; interface electronics; planned, covering topics which include: tacular Symphony Hall, a short walk from microdevice modeling and CAD; and wire- An Introduction to MEMS and Microma- the Marriott. The conference banquet on less sensor networks. Research in solid- chining; Packaging of Microelectro- Wednesday evening brings attendees state sensors, actuators and microsystems mechanical Systems; RF MEMS; Optical back to the Marriott for an evening of is highly multi-disciplinary, with partici- MEMS in Communication and Sensing; conversation and entertainment. pants from universities, industry, and gov- Simulation of Microsystems; Analog Cir- A rich program of optional activities ernment laboratories, and from many cuit Design for Sensor Interfaces; for the spouses and guests of participants diverse fields including electrical engineer- Bio/Chemical Microfluidics; and Nano- is also planned. This will include several ing, mechanical engineering, chemistry, materials and Nanotechnology. tours of Boston and of surrounding his- biology and biomedical engineering, With a mix of colonial charm and toric sites such as Lexington, Concord; a optics, and microelectronics. urban sophistication, Boston is a dynamic half-day trip to Newport, Rhode Island; The Technical Program for Transducers city. Boston’s role in shaping American his- trips to the JFK library and the Isabella ’03 will begin on Monday morning, June tory is unique among all other cities. It con- Stewart Gardner Museum; and a whale 9, with a plenary session featuring four tains many of the places where the watching expedition. world leaders in the field. Speakers and American Revolution was conceived and For up-to-date conference information, tentative titles are: Donald Eigler (IBM began. From Paul Revere’s House to the visit the Transducers ’03 website at: Almaden Research Center, San Jose, CA, Boston Tea Party Ship to the Old North www.transducers03.org Additional ques- USA) - “Molecule Cascades: Nanometer- church, history is on every corner. Boston’s tions or requests should be directed to Scale Molecular Architectures that Com- many museums, concert halls, theaters and the conference management firm, PMMI, pute“; Bruno Murari (STMicroelectronics, nightclubs are always abuzz with activity by e-mail: [email protected], by Milan, Italy) - “Lateral Thinking: The Chal- and excitement. With a wide array of fax: 1-619-232-0799, or by phone: 1- lenge of Microsystems“; Toshio Yanagida diverse and interesting attractions, visitors 619-232-9499. (Osaka University, Osaka, Japan) - “Sin- to Boston are never at a loss for something gle Molecule Nano-Bioscience“; and to do. The site of Transducers ’03 will be Stephen D. Senturia (Massachusetts Insti- the Boston Marriott Copley Place, which G. Benjamin Hocker tute of Technology, Cambridge, MA, will also provide accommodations for Honeywell Technology Center USA) - “Perspective on MEMS Past and attendees. In the heart of Boston’s historic Plymouth, MN, USA 5

2003 IEEE University/Government/Industry Microelectronics Symposium (UGIM)

facilities such as funding, equipment acquisi- Group, and Micron Technology. Other tion, maintenance, staff, operational expens- high-tech companies in the Boise area es, processing issues, industry interaction, include Hewlett-Packard, Zilog, Jabil and collaborations with other universities, intel- SCP. Micron Technology, Inc., the number lectual property and compatibility problems. two DRRAM manufacture in the world, is Papers will cover the following tech- proud to the co-sponsor of this symposium. The 15th Biennial IEEE University/Gov- nical areas: UGIM’03 immediately follows the ernment/Industry Microelectronics Sympo- • New Initiatives in University microelec- annual Boise River Festival (June 27-29) sium (UGIM’03) will be held in Boise, Idaho tronics programs, courses, laboratories, which is a three-day citywide celebration June 30-July 2, 2003 on the campus of technology transfer, industry interaction that reflects the joy, beauty and character Boise State University. For the past 30 • Government-University microelectronics of its people and environment. You can years, this symposium has had a unique mis- research programs start your day off early with kaleidoscope sion to bring together micro/nanofabrica- • Microelectronic research projects in the of colors and shapes in the hot air balloon tion researchers and educators from these areas of materials, simulation, design, rally. Plan out the rest of your day to enjoy three sectors, not only to present new techni- processes, testing, and reliability music of all genres on seven different cal results, but also the programs, collabora- • Process equipment development, manu- stages throughout the festival, sample tra- tions, and laboratories that make them facturing, statistical process control and ditional and new cuisine from the food possible. Representatives of University design of experiments courts, attend a day time parade featuring micro/nanofabrication labs traditionally • MEMS programs, courses, applications, award-winning show floats and helium attend UGIM to exchange information. Gov- processing, interactions, and research balloon characters, and the sparkling ernment agencies such as NSF, Sematech, • Electronic packaging technologies, night time parade where lights, sirens and SRC, DARPA, AFRL and ONR regularly par- processes and materials glitter run ram pant. The weekend wraps ticipate with updates on funding opportuni- • Standard silicon and compound semi- itself up with Boise’s largest fireworks dis- ties. Industry interactions with universities conductors play as it showers a host of color, light (often with government support) that open • Bioengineering and Biotechnology and music over Ann Morrison Park. up new opportunities for both education • Nanotechnology and nanofabrication A block of rooms has been reserved at and research are frequently presented here. • Metrology and sensors a reduced rate at the grand Grove Hotel The UGIM symposia are sponsored by the • University microelectronics research and University Inn in downtown Boise, Electron Devices Society of the IEEE. fa c i l i t i e s within easy walking distance of the Uni- This year’s host for the symposium is Three distinguished speakers will give versity and Boise’s historic district and Boise State University. Boise State Uni- invited talks at the conference: Basque Block. This Grand Entertainment versity’s College of Engineering came • Prof. Tsu-Jae King (EE Dept., U.C. Berkeley) Hotel offers a one-of-a-kind experience. into being in 1997 as a result of the on Nanometer Scale CMOS Technology All rooms include turn down service, school’s steady growth and diversifica- • Steve Appleton (CEO, Micron Technolo- valet, mini bars and terrycloth robes. tion and the region’s booming semicon- gy) on Cooperation Between Industry and On Tuesday evening, July 1st, the ductor industry. The College has quickly University on Research and Education symposium participants and their guests risen to be listed among US News & • Larry Craig (US Senator) on Govern- will be treated to a Basque cultural pro- World Report’s top undergraduate engi- ment-Funded Nanometer Technology. gram and banquet in the heart of Boise neering programs in the U.S.A and Boise is the capital and largest city in Basque district. A catered dinner with rapidly growing graduate program the State of Idaho, and is the hub of com- authentic Basque cuisine as well as a began in Fall 2000. merce, banking and government for the grand performance of the Basque The UGIM’03 technical session will state. Located along the Boise River and Oinkari dancers will be enjoyed by all. begin on Monday June 30 at 8:30 am in nestled against foothills of the Rocky Moun- For more information on the sympo- the Special Events Center on Boise State’s tains, our city offers many outdoor activities sium, please visit the symposium website campus and end at noon on Wednesday to local residents, from skiing at Bogus at http://coen.boisestate.edu/ugim03, or July 2. On Sunday afternoon June 29 at Basin Ski Resort to biking on the Boise River contact IEEE 2003 UGIM Symposium, 2:00 pm, BSU’s Idaho Microfabrication Greenbelt to boating at nearby reservoirs. 1910 University Drive MS2075, Boise, ID Laboratory (http://coen.boisestate.edu/imfl) The Boise area has it all – desert, rivers, 83725-2075 (E-mail: [email protected] will host an open house. The open house mountains and lakes for hiking, camping, or [email protected]). will consist of an informal discussion session kayaking, river rafting, hunting and fishing. for managers and researchers from various Many Large regional, national and microelectronics laboratory facilities, fol- international companies are headquar- Stephen A. Parke lowed by tours of BSU’s facilities. The discus- tered here, including Simplot Corporation, Boise State University sion will focus on issues common to such Boise Cascade, Albertsons, Washington Boise, ID, USA 6

2003 IEEE WORKSHOP ON CCDs AND AD V ANCED IMAGE SENSORS

The 2003 IEEE Workshop on Charge- of imaging devices in high volume (> 150 al Workshop Chair is Albert Theuwissen. Coupled Devices and Advanced Image Sen- million aggregate units/year) consumer Papers on the following topics are solicit- sors, sponsored by the IEEE Electron Devices applications such as cell phones, PDAs, auto- ed Pixel device physics (New devices and Society, is taking place at Schloss Elmau, mobiles, PC-based video applications, smart structures, Advanced materials, Improved 82493 Elmau, Germany. The workshop will toys and of course digital still cameras. models and scaling, Small-pixel arrays, be held 15 –17 May 2003. CMOS based active-pixel sensors are chal- Advanced pixel circuits, Performance The Technical Program will consist of invit- lenging charge-coupled devices in most low enhancement for QE, dark current, ed and contributed papers, poster sessions, cost applications. A few years ago, many noise,...), Image sensor design and perfor- and a discussion session. As in the previous small new start-ups in the CMOS field were mance (New architectures, Large format workshops, emphasis will be on high quality announced as well as the movement of elec- arrays, High dynamic range, Low voltage, technical content. Ample time will be left for tronics giants into this CMOS sensor arena low power, High frame rate readout, Scien- paper discussion. Key dates are January 6, could be seen. During the last two years, sev- tific-grade), Image-sensor-specific peripheral 2003 when the registration opens, and Feb- eral acquisitions happened in the imaging circuits (ADCs and readout electronics, Col- ruary 21, 2003 when the abstracts are due. world. However, CCDs are still preferred for or and image processing, Smart sensors The purpose of this very focused work- digital photography, camcorders, and many and computational sensors, System-on-a- shop is to bring together researchers in the professional applications due to their very chip), Non-visible “image“ sensors image sensor community to have in-depth high quality and maturity, and today still (Enhanced spectral response in UV, NIR, …, discussions on technical issues, to present dominate the world marketplace. Driven by High energy photon and partical detectors, recent research results, and to stimulate think- the arguments valid for CMOS image sen- Hybrid detectors), Fabrication, packaging ing on new research directions and activi- sors, new developments were announced in and manufacturing, Image sensor systems, ties. The program consists of regular oral CCD image sensors as well to make them Miscellaneous topics related to image sen- presentations, and an extended poster ses- suitable for lost-cost applications too. Imag- sor technology. High quality papers, sion. Attendance is typically limited to ing remains a challenging R&D topic. addressing work in progress, are welcome! approximately 120 persons on a first-come The workshop is also the venue for the The abstracts should be sent to the Tech- basis to preserve the workshop atmosphere, presentation of the 2003 Walter Kosonocky nical Program Chairman: Dr. Edwin Roks, although priority is given to paper authors. Award for the best paper on solid-state Philips Semiconductors, Prof. Holstlaan, 4, The workshop has become the premiere image sensors over the previous two years. Bldg. WL, 5656AA Eindhoven, The venue for very high quality state-of-the-art pre- The award will be presented at the work- Netherlands. ([email protected]) sentations and for the discussion of image- shop banquet. All information regarding this workshop sensor-technology future directions. The The workshop is organized by an Exec- can be found at: www.dalsa.com/ieee- proceedings are not published to encourage utive Committee consisting of Prof. Dr. wo r k s h o p . more open and up-to-date discussion. Albert Theuwissen of DALSA in Eindhoven, Image sensors have suddenly become a The Netherlands, Dr. Nobukazu Teranishi very hot topic and may become a major cat- of Matsushita, Kyoto, Japan and Dr. Eric Albert Theuwissen egory of high volume semiconductor produc- Fossum of Micron Technology Inc., DA L S A tion. This is due to the imminent introduction Pasadena (CA), USA. This year the Gener- Eindhoven, The Netherlands

YOUR HELP IS NEEDED – Request for your assistance in obtaining past issues of Transactions on Electron Devices Attention All EDS Members: We would like to ask for your help for scanning it would be greatly in locating the following missing issues appreciated. The issues will have to As you may already be aware EDS is of Transactions on Electron Devices: be cut to be able to scan them proper- currently working on a project to scan ly but if you would like they can be and digitize all the past issues of El e c t r o n 1956 (Volume 3) Issues 1,2,3 bound back together and returned to Device Letters and Transactions on Elec - 1970 (Volume 17) Issue 1 you when the job is completed. If you tron Devices that are not currently acces- 1958 (Volume 5) Issue 2 have any of these past issue(s) and sible via IEEE Xplore (pre 1988) issues. 1972 (Volume 19) Issue 5 are willing to lend them to the Society, In order for this project to be completed, 1961 (Volume 8) Issues 1,2,3,4 please notify Stacey Waters at the all these issues must be located and 1977 (Volume 24) Issue 10 EDS Executive Office at your earliest scanned. Currently, all the past issues of 1965 (Volume 12) Issue 9 convenience and she will make the EDL have been found and scanned. 1978 (Volume 25) Issue 4 arrangements to obtain the issue(s). Many issues of T-ED have been located 1967 (Volume 14) Issue 8 Stacey can be reached via e-mail at and the scanning process has begun; If you have any of these missing [email protected] or via telephone at however some issues are still missing. issues and would like to donate them +1 732 981 3448. 7

Society News

December 2002 AdCom Meeting Summary

The 2002 December Ta s k ’03 Price ’04 Price ’05 Price In c r e m e n t a l Rev Increase meeting of the IEEE Co s t Electron Devices Soci - Increase Dues $6 $10 $14 $18 $35K ety was called to order Increase EDL $15 $18 $20 $20 $13.6K-2004 by President Steve Hil - subscription fees $9K-2005 lenius on Sunday, Increase T-ED $25 $28 $30 $38 $12.4K-2004 December 8 at the San subscription fees $8.4K-2005 Francisco Hilton pre - ceding the 2002 IEDM Projected prices of EDS membership and Subscriptions fees from 2003-2005 (in $US) Co n f e r e n c e . years ago. A consulting firm, retained of anticipated society assessments; Executive Repor ts by the societies to look at all operations obtaining TAB approval for both the new Recognized outgoing members of and finances, indicate in its preliminary Technical Committees Chair position, & AdCom included Krishna Shenai (Elect- report that IEEE investment policies, revisions to the EDS Field of Interest ed AdCom Member), Lou Parrillo (Fel- staff hierarchy, governance, and image Statement; arranging for the biennial lows Chair), and Hiroshi Iwai need to be reexamined and restruc- Region 10 Chapters Meeting; directing (Regions/Chapters Chair). Steve’s tured. But even so, there is no clear the ongoing digitization of pre-1988 opening address concerned the ongo- road to solving IEEE’s fiscal problems EDL, IEDM & T-ED papers; preparing for ing issue of IEEE finances, and resulting at this time. the five-year review of EDS publications society issues. This year $21.5M was Reporting for the EDS Executive by the TAB Periodicals Committee, and collected by all IEEE Societies and Office, Bill Van Der Vort, presented a a five-year review of the Society by the Councils to support IEEE’s budget with lengthy list of Adhoc projects completed TAB Society Review Committee. another $18.7M in allocations project- since the Spring AdCom meeting. A few ed for 2003. Each society’s contribu- of the items included; working with the Chair Reports tion was based on its individual EDS History Booklet Committee and IEEE Over the last two years, the assess- package revenue sharing (from pro- History Center to coordinate the devel- ments made by the IEEE on EDS have grams such as Book Broker, and the opment of a portable display of the Soci- had a major impact on society finances. All-Societies Periodicals Package), and ety’s history, and technologies in honor Treasurer, Paul Yu, reported that the reserves. In fact this put nine societies of EDS’ 50th birthday anniversary; mak- budgeted cost of $200.4K for Society including EDS into deficit spending and ing arrangements for the 50th Anniver- expenses ballooned to $1384.9K with onto a watchlist. A plan to recoup sary Dinner/Talk Celebration; providing the additional allocation made by IEEE. $267K in revenue for EDS was present- recommendations in collaboration with This action also reduced EDS’ net ed to TAB FinCom, and accepted (see the EDS Treasurer for changes in the income for 2002 from +$569.1K to - Chair report later in this article). In EDS budget, to reach a break-even sta- $770.5K. Meetings revenue following addition to financial issues, EDS has tus in 2005 and beyond; researching to 9/11 fell by almost $400K. While con- instituted a strategic plan to broaden develop a list of EDS members who have ference income is expected to rise in the base of interest and to be sure that been elected to the NAE; performing an 2003, Paul predicts a deficit of $286K, EDS reflects global activity and trends. overall update on data contained on the which initially put EDS on a TAB watch- Highlights of this plan include the EDS website and developing a proce- list. To address this problem, Paul, restructuring, and empowerment of the dure to keep all data current; continuing Steve, and the Executive Office put EDS Technical Committees, and the the digitization of pre-1988 issues of together a plan to get back to a break- possibility of adding new areas such as EDL, T-ED, and the IEDM proceedings; even level in 2005 and beyond. By organic electronics. IEEE finances con- working with the EDL, T-ED, & T-DMR delaying some chapters and education tinue to be an issue at higher levels as EICs to put in place a new procedure programs, $23.4K should be saved. reported by Division I Director, Cary whereby editors name reviewers worthy However, the Society plans to recoup Yang. All the council and society presi- of recognition by listing their names & the majority of the shortfall in funds by dents have expressed concern over the affiliations in the respective journals. In graded increases in membership and equity and fairness of the assessments 2003, some of the upcoming Adhoc journal subscription fees. The box above made to their respective groups, and tasks for the Executive Office include: summarizes these projected costs over the reduction in reserves. EDS reserves, determining and coordinating any the next three years with the expected for example, have been reduced by regional 50th anniversary celebrations; savings. The incremental cost of each half from a level of $7M just a few working on the EDS budget in the light was predetermined independently by 8

new statement proposal was approved IEEE Region Co u n t % of Total and is included in another article in 1-6 (United States) 7, 7 4 8 57 . 9 this issue of the Newsletter. 7 (Canada) 24 2 1. 8 With the onset on electronic publish- 8 (Europe, Middle East, & Africa) 2, 4 9 2 18 . 6 ing, hardcopy circulation of both EDL 9 (Latin America) 18 5 1. 6 & T-ED is decreasing. With an under- standing of the long-term impact of 10 (Asia Pacific) 2, 6 9 7 20 . 1 electronic access on EDS paper circula- To t a l 13 , 3 6 4 10 0 tion, setting goals and objectives in EDS Membership Demographics for 2002 (as of 10/31/02) this area will become clearer. In addi- tion to the standard “impact factor“ used to evaluate major publications, TAB Finance. commercial investment in semiconduc- Renuka’s group continues to examine In other financial business, rates tor electronics has blossomed increas- additional metrics, or quality factors, for 2004 publication subscriptions, ing interest and potential members. based on editorial quality ratings, page counts, and membership fees Iwai-san also introduced the Taipei author surveys, and number of hits on were approved. On the membership Chapter Chair, Steve Chung, as his IEEE X p l o r e® to better rate publica- side, EDS had 13,364 members in chapter was named the winner of the tions. Since both flagship journals 2002 slightly down from 13,489 in 2002 EDS “Chapter of the Year“ annually are a major portion of the 2001 (-0.14%). Of these, 7,722 are A w a r d . budget, it is important to comprehend regular members, 4,272 are perma- The Distinguished Lecturer (DL) Pro- how speed (time-to-publication), quality nent members, 1,355 are students, gram continues to expand worldwide. (appropriately defined), and electronic and 15 remain affiliate members. The Both the number of lecturers (up to 140 publishing impacts total circulation. demographics can be seen in the in 2002) and the number of lectures Both EDL & T-ED were profitable in above graphic. given (102) has risen from their respec- 2002 with T-ED bringing in $300K, Membership chair, James Kuo, tive 2001 levels according to Ilesanmi and EDL about $183K. As budget reports that the option of permanent Adesida, Education Chair. Also in issues proliferate, EDS is also looking membership will be phased out in the 2002, the EDS Videotape Lending at the cost of accessing on-line IEEE 2004 billing cycle, but all present Library was active with 14 tapes bor- publications. Currently EDS members PMs will be grandfathered through the rowed by 12 chapters, while the EDS can look at 11 publications on the web end of 2003. This year also saw an Graduate Student Fellowship Program at a cost of $122K to EDS. By reduc- increase in the number of Senior had a very successful second year. ing this number by three, it is estimated Members to1389, and Fellows to With an expanded pool of applicants that $33K could be saved. It was dis- 646. The rapid rise in the number of and universities participating from cussed that this action might be unwise Senior Members and Fellows from around the world, the Graduate Stu- in the light of encouraging electronic Region 10 (i.e. 272 of 1389 for dent Fellowship Program is establishing access and membership worldwide, SM’s, & 272 of 646 for Fellows) has itself as a major student competition. but the pressure of fiscal responsibility been noteworthy. On the other side, The address by Renuka Jindal, Publica- is presently a higher priority. the loss of members this year, particu- tions Chair, discussed his group’s On the digitization front, all EDL larly in the US, due to the economic efforts in establishing policies, proce- issues from 1980-1987 have been recession was disappointing. James dures, & guidelines, performance met- scanned. T-ED has located almost all its also listed the eighteen memberships rics, publication costs, digitization, issues from 1954-1987 and has start- subsidized by EDS in 2002 and author recognition, IEEE Press rela- ed to have them scanned. Some issues praised the ongoing efforts at recruit- tions, and all-electronic processing remain unfound, and a search for them ment such as conference onsite credit standards. With organics becoming is in progress. See a separate article in vouchers, TIP mailings, promotional pervasive, EDS has made revisions to this issue of the Newsletter for a list of material for EDS sponsored meetings, its Field of Interest statement to reflect the missing issues. The digitization of and DL promotions. In line with EDS its interest and position in this area. the IEDM proceedings from 1955- globalization, Hiroshi Iwai, Regions The Publications Committee proposed 1987 has not yet begun. With IEEE Chapters Chair, announced that the a revision to adapt new organics initia- Press, Renuka, and Joe Brewer, EDS total number of chapters has reached tives, while not conflicting with the IEEE Press Coordinator, report that the 106 in 2002, with new ones being objectives of related societies and collaboration between IEEE Press and added in Brazil, Turkey, and Bulgar- councils. Although the current state- Wiley has transformed it (IEEE Press) ia. While Regions 8 and 10 remain ment, which has been in place for over into a major publisher with plenty of the fastest growing, Hiroshi cautioned fifty years, accurately represents the marketing and production muscle. that as activity worldwide especially interests of the Society, it is not explicit Under the agreement, Wiley handles in the Western US, and Latin America in some respects. This generates room production, distribution, marketing, remains good, some (in the Eastern for confusion, hence this revision. sales, royalties, and property rights US) have been relatively inactive. Specifically, the addition of the word while IEEE Press covers author recruit- Active dialogue is underway with the “engineering“, and the phrase “organ- ment, contracts, reviews, and some Peoples Republic of China, particular- ic and other emerging materials based marketing. Joe revealed that a survey ly in Beijing and Shanghai where devices“ will correct this situation. The of EDS authors showed that while IEEE 9

Press was viewed as weak and unat- Aw a r d Re c i p i e n t / A f f i l i a t i o n tractive in the past as a publisher, they National Medal of Technology Jerry Woodall (Yale) are willing and interested in using IEEE E Medal of Honor Nick Holonyak, Jr. (Illinois) Press both now and in the future. In IEEE Robert N. Noyce Award Donald Scifres (JDS Uniphase) closing, Renuka discussed a survey IEEE Andrew S. Grove Award Mark Bohr (Intel) done by Arokia Nathan of some web- based publishing software, and pro- IEEE Leon Kirchmayer Award Robert Meyer (UC-Berkeley) posed that Manuscript Central IEEE David Sarnoff Award Peter Asbeck (UC-San Diego) (recommended by IEEE) become the IEEE Cleo Brunetti Award Andrew Neureuther (UC-Berkeley) choice of EDL & T-ED in the future. EDS J.J. Ebers Lester Eastman (Cornell) Founded in 1999, Manuscript Central EDS Distinguished Service Award Lucian Kasprzak is presently used by 33 IEEE journals. Meetings Chair, Ken Galloway got EDS Recipients of National, IEEE, and EDS Awards for 2002 approval for all EDS repeat meetings in 2004, and gave statistics on those for 2002. This past year EDS was involved elect. The latter move aligns EDS with Transactions on Device and Materials with 24 financially sponsored meetings, many other societies who have done Reliability (T-DMR) that is seeking papers 70 that were technically co-sponsored, the same. While the current VP posi- on high-K dielectrics, Cu technology, and and 7 for which we provided coopera- tion is a defacto President-elect it magnetic, ferroelectric, and optical tion support. A request for the society would solidify the position in terms of devices as a priority. Optoelectronics to become sole sponsor of the P2ID TAB representation. This caused a continues to thrive under Chennupati (Plasma Processing Induced Damage) great deal of discussion on two points. Jagadish’s TC efforts. A Special Issue of Conference received approval with the First, AdCom members felt that the Sec- JLT on 40 Gbs/s systems and optical proviso that this meeting might become retary and Treasurer should retain full interconnect was a major contribution in a workshop or specialists conference in voting privileges and, secondly, 2002. In 2003, they plan to collaborate the future. Also approved was a whether or not following TAB recom- on topics of mutual interest with other request for technical co-sponsorship for mendations (to change the VP title) was groups and TC’s especially in the areas the independent 2003 NanoTech Con- really going to benefit EDS. Neither of organic LED’s, active & passive photon- ference and Trade Show after discus- initiative was approved. The continu- ic bandgap devices, long wavelength sion on whether or not participation ing work to bring AdCom member vot- VCSEL’s, and wide bandgap (ZnO, might negatively impact IEEE’s own ing to the full EDS membership still is GaN) optoelectronics. Chennupati’s nanotechnology conference (Nano being discussed and more action is group also plans to propose a TC on 2003). In related meeting news, IEDM required. Rajendra Singh agreed to “Organics“ as well. Chair, Shuji Ikeda, expected 1600- take on this assignment and report Rajendra Singh, leader of the Semi- 1700 attendees at IEDM 2002. Bounc- back in December. AdCom also sup- conductor Manufacturing TC, praised ing back from low attendance in 2001, ported a bylaw change to add the new the work of the Transactions on Semicon - 552 signed up for the short courses, position of Technical Committees Chair ductor Manufacturing (T-SM) in becom- and it appears that the meeting will (Arlene Santos) to be both an AdCom ing a leading publication in this area as return to profitability. and ExCom position, thus broadening evidenced with their issues on “Sub-70 Award’s Chair, Al Mac Rae presented a the influence of technical committees in nm Manufacturing“ and “Single Wafer comprehensive list of EDS members recog- EDS decisions and policy. Manufacturing“. According to IEEE (The nized with major national, IEEE, and EDS Institute, Jan 2002, 2000 ISI Journal awards in 2002, as summarized in the Technical Committee (TC) Citation Report), IEEE T-SM is the num- chart to the right. ber one cited journal in engineering and Al exhorted the assembled AdCom Re p o rt s manufacturing. This committee post- to be pro-active in nominating mem- Narain Arora’s Compact Modeling poned their effort to form a Semiconduc- bers for IEEE Awards in 2003. On the TC’s directive is to objectively identify tor Manufacturing Council. It will Fellows side, outgoing chair, Lou Parril- and evaluate existing compact models for support a new T-SM issue on “New lo stated that from 47 nominations circuit simulation especially to promote Materials in Semiconductor Manufactur- received 21 were elected to Fellow interaction between developers and cir- ing in 2003, and looks to maintain the grade, and an additional 10 were cuit designers. This year the group has quality of T-SM and semiconductor man- elected by other societies. Jerry put up a web-based Journal of Compact ufacturing conferences. On the vacuum Woodall has agreed to form a commit- Modeling for Circuit Simulation with scene, Jim Dayton’s TC published a sur- tee of EDS National Academy of Engi- papers on device models, and intercon- vey article in the EDS Newsletter, and is neering (NAE) members to nominate nect. Slanted towards industry, the new looking hard at the issue of training & Fellows for the NAE. Cary Yang, who publication will appear four times a year education for future generations of vacu- heads the Nominations and Elections with reviews performed by TC members. um technologists. Creating opportunities Committee, discussed his initiative to Two workshops were held this year in for graduate education, recruitment, and change the positions of EDS Treasurer March (MOS Models) and one for the undergraduate outreach programs are and Secretary to be appointed without FSA in September on interconnects. Lu high priorities for this group. Jim Hutch- full voting rights, and to change the Kasprzak reporting for the Device Relia- by, VLSI Technology Chair, discussed his position of Vice President to President- bility TC listed the continuing progress of group’s planning for the “Emerging 10

Technology“ evening session at IEDM web about 2.5 months after submis- tion, advanced APC/equipment con- 2002. They have teamed up with the sion. The 205 papers published this trol, and compound semiconductor Compact Modeling TC for the “MOS year are significantly higher than last manufacturing. He also plans to work Models“ workshop, and with the SRC at year’s number of 181. EDS Newsletter with his associate editors on assessing the Mixed Signal Workshop. Among Editor-in-Chief, Ninoslav Stojadinovic, strong/weak areas, readership & rele- their goals are T-ED issues on “Non- reported that the submission system vance issues, reviewing historical statis- Classical CMOS Devices“, “Advanced using the IEEE Executive Office to cen- tics and trends, and improve existing tralize newsletter operations similar to editorial areas. It is too his credit that T- that of T-ED & EDL is working well. He SM enjoys a 10% subscription rate from “Time-to-publication for also praised editors for increasing the EDS members. J-MEMS edited by Richard amount of regional & chapter news in Muller grew to 630 pages in 2002 and Electron Device Letters has 2002. Reporting on T-ED, Editor-in- plans to grow to 700 next year. Chief, Doug Verret, reported improve- For 2003, EDS officers are President, now been reduced to an ment with the electronic submission Steve Hillenius, Vice President, Hiroshi system cutting papers to 132 days in Iwai, Treasurer, Paul Yu, and Secretary, average of 4.0 months. ” review and 85 days in publication, John Lowell. First time elected AdCom about 7 months turnaround. About two- members were Francisco J. Garcia- -Yuan Taur, EDL Editor-in-Chief thirds of submissions are coming from Sanchez (University Simon Bolivar, Europe, and the Asia-Pacific region. Caracas, Venezuela), and Juin J. Liou NV Memory Technology“, and a nan- The system has actually reduced the (University of Central Florida). otechnology-focused one on “Heteroge- page budget this year, and web post- The next meeting of the EDS AdCom neous Integration of Dissimilar Devices“. ing is now six months sooner than it will be on Sunday June 1, 2003 at the was in 2000. Speaking for T-DMR, Edi- Hotel Lottee in Seoul, Korea in conjunc- Publication Repor ts tor-in-Chief, Tony Oates, saw 38 tion with the IEEE International Vacuum papers submitted accepting only 14 in Electronics Conference. EDL Editor-in-Chief, Yuan Taur, listed 2002. Solicitation of web advertising a new milestone for the publication. for T-DMR continues. Duane Boning, The time-to-publication has now been Editor of T-SM, published 480 pages in reduced to an average of 4.0 months, 2002 up from 425 in 2002. Duane John Lowell achieving his intended target as EIC. plans to publish future special issues in Co n s u l t a n t Accepted papers should appear on the areas such as EHS, sub-70nm fabrica- Dallas, TX, USA

Message From the Editor-in-Chief

After three years Kong. He joined the faculty of the dielectric film characterization, IC of distinguished Department of Electronic Engineering at process modeling and characterization, service on the Edi- the City University of Hong Kong (for- MOS integrated circuit design, and sol- torial Staff, Dr. merly known as City Polytechnic of id-state sensors. He is author or co- Tahui Wang has Hong Kong) in 1989. author of over 80 papers (including decided to step Dr. Wong is currently the chair of the four review papers) in international down because of IEEE ED/SSC Hong Kong Chapter. His journals and 80 papers (including six other commitments. recent major activities include: the Gen- invited papers) in conference proceed- I would like to take eral Chair of the IEEE Conference on ings. He received the MRS Young this opportunity to Electron Devices and Solid-State Circuits Researcher Award at the 4th IUMRS Dr. Hei Wong thank Tahui for his (Hong Kong, 2003), the Technical Pro- International Conference (Japan) and dedicated service to the Newsletter as gram Chair of the 2002 IEEE Interna- the Best Paper Award at the 21st Inter- a Region 10 Editor. Replacing Dr. tional Caracas Conference on Devices, national Conference on Microelectron- Wang is Dr. Hei Wong from the City Circuits, and Systems (Aruba, 2002), ics (Yugoslavia) in 1997. Dr Wong University of Hong Kong whose biogra- and the Steering Committee member of received the 25th Anniversary Award phy follows. Hei has a lot of experi- 23rd IEEE International Conference in from the IEEE ED/SSC Yugoslavia ence in EDS related activities, and it is Microelectronics (Yugoslavia, 2002). Chapter in recognition of his outstand- my pleasure to welcome him as the Dr. Wong has been serving as a mem- ing contributions to the development of new Region 10 Newsletter Editor for ber of the Editorial Board of the Micro- the MIEL Conference in 2000. East Asia. electronics Reliability journal since Hei WONG received the B.Sc. 1996 and a Regional Editor of the degree in electronics from the Chinese same journal since 1999. University of Hong Kong and Ph.D. Dr. Wong has worked in the areas Ninoslav D. Stojadinovic degree in electrical and electronic engi- of MOS device modeling and charac- University of Nis neering from the University of Hong terization, hot-electron effects, thin Nis, Yugoslavia 11 2002 EDS J.J. Ebers Award

The 2002 J.J. Ebers U.S. Government DOD Advisory Group tributions to optoelectronic devices, Award, the prestigious on Electron Devices 1978-88, and direct- particularly high speed photo detec- Electron Devices Soci- ed Cornell’s Joint Services Electronic Pro- tors and lasers ety award for out- gram 1977 - 1987. Prof. Eastman has authored or co- standing technical Prof. Eastman has been at the fore- authored over 700 journal articles and contributions to elec- front of high speed compound semicon- conference presentations. During his aca- tron devices, was pre- ductor device research for decades, and demic career, Prof. Eastman had super- sented to Lester F. has dramatically impacted the develop- vised 111 PhD theses, 41 M.S. theses, Eastman of Cornell ment of this field. His contributions cover and 81 post-doctoral studies. University was unable the entire range of technology - materi- Prof. Eastman has received numerous Lester F. Eastman to attend the award als, processing, design, simulation, mod- awards. He is a Fellow of IEEE and APS, ceremony at the Inter- eling and applications. His research on and an Alexander von Humbolt Senior national Electron Devices Meeting in San GaAs microwave devices reached Fellow. He is a member of the Electro- Francisco, CA on 9 December 2002, record pulsed powers of 6 KW in L magnetics Academy and National Acad- Lester Eastman asked his colleague at Cor- band and 1 KW in X band. He and his emy of Engineering. He received the nell, Sandip Tiwari, to accept it on his group co-developed the fabrication of IEEE 1999 Graduate Teaching Award behalf. This award recognizes Professor mushroom-shaped cross section gates for and its Third Millennium Medal, the Eastman “For sustained technical contribu- millimeter wave MODFETs, a technique Aldert van der Ziel Award, Heinrich tions and leadership in the development of now widely used to achieve state of the Welker Gold Medal, and the Internation- high frequency heterostructure transistors.“ art results. His group established records al Symposium on GaAs and Related Les Eastman was born in Utica, NY in for strained-layer quantum well MOD- Compounds Award. The Biennial IEEE 1928, and was raised in Waterville, NY. FETs on GaAs substrates, achieving 150 Cornell Conference on Advanced Elec- He majored in Electrical Engineering at GHz ft and 250 GHz fmax in 1988 tron Devices, founded by him 1967, Cornell University, obtaining his B.S., using such gates. was renamed the IEEE Lester Eastman M.S., and PhD. in 1953, 1955, and Recognizing the potential advan- Conference in 2002. 1957, respectively. At Cornell he was an tage of InP over GaAs, he and his In 1948, after serving two years in Assistant Professor of Electrical and Engi- group were instrumental in developing the U.S. Navy, Prof. Eastman married neering in 1957, Associate Professor in MODFETs using InP substrates, and Anne Marie Gardner, a Licensed Practi- 1960, full Professor in 1966, and the led in understanding and demonstrat- cal Nurse. They have three children: the John L. Given Foundation Chair of Engi- ing its high speed characteristics. He oldest, David, is practicing architecture neering in 1985. He had numerous visit- and his group also were leaders in in New York City; the next oldest, ing and exchange positions, including developing and applying concepts of Daniel, is a Senior Vice President at a Chalmers Technical University in Swe- near ballistic electron transport in com- bank in Boston; and the youngest, Lau- den, David Sarnoff Laboratory, MIT Lin- pound semiconductors to achieve high rie, is an Assistant Research Project coln Laboratory, IBM Research Center, ft. He demonstrated a variety of novel Manager at MIT. They have four grand- and Northeast Semiconductor in Ithaca, structures for higher performance, children: Jason, Elizabeth, Evan, and NY. He was a member of the Kuratorium including planar-doped barriers, HBTs Jonathan. Prof. Eastman’s hobbies for (the senior advisory committee) for the with near ballistic base transport, and the past forty years have included sail- Fraunhofer Applied Physics Institute in VFETs. He and his group have also ing and traveling. Freiburg, Germany from 1987-1993. He been at the forefront in developing co-founded Nova Crystals in San Jose, GaN-based HFETs, making important CA and R.F. Nitro in Charlotte, NC. He advances in device design, polariza- Louis C. Parrillo was the 1987 IEEE Electron Devices Soci- tion doping, surface passivation, and Mo t o r o l a ety National Lecturer, a member of the materials. He also made valuable con- Austin, TX, USA

2003 EDS J.J. EBERS AWARD CALL FOR NOMINATIONS

The IEEE Electron Devices Society invites the submission of nominations for the 2003 J.J. Ebers Award. This award is presented annually for outstanding technical contributions to electron devices. The recipient(s) is awarded a certifi- cate and a check for $5,000, presented at the International Electron Devices Meeting (IEDM).

The nomination form can be requested from the EDS Executive Office (see contact information on page 2) or is available on the web at www.ieee.org/organizations/society/eds/ebers.html. The deadline for submission of nominations for the 2003 award is 1 July 2003. 12 2002 EDS Distinguished Service Award

The IEEE Electron mittee was multi-disciplined (materials sci- scale-integrated devices through the integra- Devices Society is ence, physics and electrical engineering) sol- tion of reliability physics with process devel- extremely proud of the id state technology. His Doctoral Thesis was opment.“ From 1992 to 1996, he was services that it pro- “Charge Storage on Small Metal Particles in Associate Professor of Physics and Engineer- vides to its members. an MAOS Structure“. ing Science, at Franciscan University, on Its members generate He returned to the East Fishkill Facility leave of absence from IBM Corporation. In the premier new devel- and worked on reliability of CMOS technol- 1995, he retired from IBM. opments in the field of ogy. In 1973, during stress test of CMOS In 1996, he joined Sterling Diagnostic Lucian A. electron devices and inverter circuits, he discovered the hot elec- Imaging as Reliability Manager for the K a s p r z a k share these results with tron effect, with Anthony Honung, on 1.25 Direct Radiography Program, a digital x- their peers and the micron n-channel devices. The work was ray detector using Selenium and TFTs to world at large by publishing their papers classified “confidential“ and could not be replace x-ray film. He became Director of in EDS journals and presenting results in its published for 10 years. He spent the next Reliability at Direct Radiography Corp. in meetings. This is a global activity that is year as chair of a multi-divisional task force, 1997. Early in 2001, he became an inde- effective because of the efforts of numerous set up to deal with this new phenomena. pendent Reliability Consultant. volunteers. Many of these volunteers labor Others on the task force, notably Ron Trout- Dr. Kasprzak has 3 patents and some in relative obscurity, with their only reward man and Tak Ning, picked up the challenge 40 publications. being the satisfaction that they receive in to deal with hot electrons. His early solutions, He has received the Benefactors Award being an important part of a successful such as extended and graded junctions, from Franciscan University and is listed in organization, namely of the Electron were pursued to reduce the electric field and American Men and Women of Science, Devices Society. They should be thanked. thereby the threshold voltage shift. He Who’s Who in America, and Who’s Who Lucian A. Kasprzak was born in Scran- received an award from IBM in 1974 for in Science and Engineering. He is also a ton, Pennsylvania in 1943. He received a discovery of the Hot Electron Effect. Others, member of the American Physical Society. BS in physics in 1965 from Stevens Institute for example Abbas and Dockerty, using this Over the years, Dr. Kasprzak has partic- of Technology; and in that same year, joined work as a compass, duplicated the effect in ipated in civic activities; among them, he International Business Machines (IBM) in much longer channel devices. He next went was: a member of the Environmental Board upstate New York at the East Fishkill Facility. on to develop a reliable low barrier Schottky of Wappingers Falls, New York; a soccer As Failure Analysis Engineer, he developed diode, for which he received an IBM Out- coach for twelve years in the East Fishkill electrical and physical failure analysis tech- standing Innovation Award in 1980. Youth Soccer league; and a parish council niques for new products. Ultimately, he He held positions as Senior Engineer, member and treasurer for Saint Columbia developed a course on failure analysis for Memory Reliability Engineering Manager, Parish in Hopewell Junction, New York. engineers and technicians and prepared a Functional Manager of Assurance for Large He lives in Pennsylvania with his wife 500 page Failure Analysis Manual for use Memory Systems, Manager of Memory Carole. They have two children, Brian within IBM. While at IBM, he pursued an Technology, Program Manager of System and Dawn Marie. They enjoy vacations MS in physics at Syracuse University, gradu- Technology Support, and Program Manager at the shore, Broadway shows, museums ating in 1970. At that time, he was award- for Technical Professional Relations. During and the Symphony. ed an IBM Resident Fellowship to pursue a the early 80s, he studied the Management Doctorate. He received his Ph.D. in materials of Technology via an IBM in-house course W. Dexter Johnston, Jr. science from Stevens Institute of Technology with MIT professors. In 1988, he became an Multiplex, Inc. in 1972. His Doctoral Thesis Advisory Com- IEEE Fellow “For contributions to very-large- South Plainfield, NJ, USA

2002 EDS Chapter of the Year Award

On December 9, 2002, at the IEDM The major events during this period attracted more than 15,000 visitors held in San Francisco, CA, the ED Taipei are categorized into 3 major items and since its set-up. And, finally, the web Chapter received the EDS Chapter of the are focused on technical/educational site has been re-modeled by including Year Award which included a certificate activities. The first one is to promote the a master list of the chapter members and check for $1,000. participation of medium sized meetings that the ED Taipei members can The IEEE ED Taipei Chapter was found- of the Chapter members. The second one access. The web-site has been very ed in 1993 and has grown rapidly in is to have a series of Educational Lec- useful and offered a great benefit to accordance with the rapid growth of the tures. Eight meetings and lectures were its members. microelectronics industry in Taiwan during held during the period and 1,550 peo- the period. The number of the Taipei ple in total attended the events. These Chapter members is now more than 300. events are advertised through a new Hiroshi Iwai The chair of the chapter is Prof. Steve web-site (http://www.edsTaipei.edu.tw) Tokyo Institute of Technology Chung of National Chiao Tung University. developed one-year ago and have Yokohama, Japan 13 EDS Members Named Winners of the 2003 IEEE Technical Field Awards Five EDS Members were among His publications continually push the paved the way for Intel’s successful Pentium the winners of the 2003 IEEE Tech- limits of simulation, taking alternative microprocessors. He has helped develop nical Field Awards. They are: approaches to new technologies like many groundbreaking technologies includ- new lithographic materials, mask ing: modern CMOS technology in 1981; An drew R. geometries, defect inspection and shot CMOS DRAM technology in 1983; BiC- N e u r e u t h e r o f noise limits to lithography into consider- MOS logic technology in 1992; logic tech- University of Cali- ation. He has written or co-written 250 nologies ranging from 0.8mm to 0.13mm fornia, Berkeley, papers, including the classic series, and beyond; and the recent 90 nm process won the 2003 "Modeling Projection Printing of Positive technology employed by microprocessor IEEE Cledo Brunetti Photoresist," published in the IEEE Trans- and communication products. The features Award. His citation actions on Electron Devices in 1975. and techniques defined by Mr. Bohr have states, "For p i o- Dr. Neureuther joined the Depart- helped give Intel industry-leading process neering contribu- ment of Electrical Engineering and Com- and product capabilities. tions to modeling puter Sciences at the University of Mark T. Bohr was born in Westchester, and simulation of California, Berkeley in 1966, where he lll., on 31 October 1953. He received a the lithographic materials, processes, is currently Conexant Systems Distin- bachelor’s degree in industrial engineer- and tools used in m i c r o e l e c t r o n i c s guished Professor and the chair of the ing in 1976, and a master’s degree in m an u f a c t u r i n g ". Interdisciplinary Graduate Group for electrical engineering in 1978, both from A world leader in the development of Applied Science and Technology. the University of Illinois, Champaign- the technology computer aided design Andrew R. Neureuther was born on Urbana. Currently, he directs process (TCAD) for lithography and pattern 30 July 1941, in Decatur Ill. He received architecture and integration with a special transfer, Andrew R. Neureuther has his bachelor’s, master’s and doctoral focus on development activities for Intel's played a crucial role in enabling the degrees in electrical engineering from 65 nm process technology. fabrication of microminiaturized devices. the University of Illinois, Urbana, in Mr. Bohr has always been generous in By repeatedly focusing on critical 1963, 1964 and 1966 respectively. sharing his expertise with the technology problem areas before they become obvi- A Fellow of the IEEE, Dr. Neureuther community. He has taught courses inside ous industry-wide, Dr. Neureuther has is a member of the National Academy Intel and at conferences, given presenta- helped manufacturing keep pace with of Engineering and is a distinguished tions and published work that has provided the demands of Moore’s law, by devel- alumnus of the Electrical and Computer the benchmarks against which high perfor- oping tools to simplify the complex litho- Engineering Department at the Universi- mance CMOS technologies are measured. graphy processes of microminiaturized ty of Illinois. He has advised 35 masters A Senior Member of the IEEE, Mr. Bohr devices. His work has fueled the growth and 30 doctorate students. has served on paper selection committees of the CAD industry, and by extension, for the IEEE International Electron Devices enabled the miniaturization of transistors Mark Bohr o f Meeting and the Symposium on VLSI Tech- for the semiconductor industry. Intel Corporation nology. He holds 19 patents for his work on While a visiting scholar at IBM in the won the 2003 integrated circuit processing, and has been 1970’s, Dr. Neureuther collaborated IEEE Andrew S. awarded Intel’s highest technical honor— with the group of F.H. Dill on modeling Grove Award. His designation as an Intel Fellow. In 1998, he optical projection printing. In 1979, Dr. citation states, "For received the Distinguished Alumnus Award Neureuther developed the pioneering leadership in scal- from the University of Illinois Department of user-oriented computer programs for sim- ing of advanced Electrical and Computer Engineering. ulation and modeling of profiles in litho- CMOS technolo- graphy and etching (SAMPLE), along gy for micro- Peter M. Asbeck with Professor W.G. Oldham. Since p r o c e s s o r s ". of University of Cal- then, he has consistently advanced the Close to a billion microprocessors ifornia San Diego state of the art with models for chemical- have been manufactured employing Mark won the 2003 IEEE ly amplified imaging materials (STORM), T. Bohr’s work. As an architect and inno- David Sarnoff assessment of residual effects of defects vator for Intel’s CMOS technology, Mr. Award. His citation and lens aberrations (SPLAT), electro- Bohr’s leadership has been a vital ele- states, "For develop- magnetic scattering (TEMPEST), time-evo- ment of virtually every CMOS or BiCMOS ment and applica- lution of topography (SAMPLE3D), technology at Intel since the 1980s. tions of GaAs-based environments for integrating simulators Since joining Intel's Portland Technology heterojunction bipolar transistors". with process flow (SIMPL) and remote Development group in 1978, Mr. Bohr has A pioneer in development of GaAs web-based simulation (LAVA). The tools led the development of simple yet elegant microwave heterojunction bipolar transis- he has championed have become indus- processes that facilitate large volume pro- tors (HBTs), Peter M. Asbeck has greatly try standards, and have influenced Tech- duction of top microprocessors. His work advanced HBT physics, fabrication and nology Computer-Aided-Design (TCAD) helped to usher in the CMOS DRAM era, applications. Professor Herbert Kroemer, products like PROLITH and DEPICT. and his work on BiCMOS logic technology the 2002 IEEE Medal of Honor recipient 14

and 2000 Nobel Laureate in Physics, art. At Digital Equipment Corporation, he states, "For inspirational classroom teaching, calls Dr. Asbeck "the leader of the field of led the development of a number of micro- outstanding mentoring and developing excel- heterostructure bipolar transistors in the processors that have had lasting impact on lent teaching materials in microelectronic cir- U.S.A., and one of the top two or at most the industry. His work on the T11 proces- cuit design" three individuals in this field worldwide." sor cut the number of transistors on a chip For more than 30 years, Robert G. Dr. Asbeck's work has included the from 68K to 13K compared to other imple- Meyer has made the complicated design and physics of devices, new fabrica- mentations of similar architectural complex- aspects of electrical engineering inter- tion processes, simulation techniques and ity. His pioneering micro-VAX design fit a esting to students. Colleagues have design and testing of benchmark circuits VAX instruction on a single chip, and referred to his lectures as "polished that highlighted the advantages of HBTs. employed new clock designs that gems," and he has supervised more He led the development and demonstration improved booted clock circuits far beyond than 20 doctoral students and more of groundbreaking ECL/CML HBT circuits what had been previously demonstrated. than 60 masters students that form a fabricated in GaAs. As a result of Dr. Mr. Dobberpuhl’s leadership on the cele- notable group of today’s leading radio Asbeck’s focused efforts on microwave and brated ALPHA processor resulted in the frequency integrated circuit designers. mm-wave power HBTs and power ampli- fastest processor of its day and established Many of the top analog bipolar IC fiers, GaAs HBT technology has evolved much-emulated performance trends. His designers have also studied with Pro- into a mainstream microwave device tech- team subsequently broke records for perfor- fessor Meyer. nology that is now widely used in cellular mance per watt with the StrongARMTM A member of the faculty of the Uni- phones and high-speed optical fiber links processor, a high performing, low power versity of California at Berkeley’s for driving lasers and modulators. chip that utilized techniques of threshold department of electrical engineering Dr. Asbeck launched his career as an engineering, aggressive clock gating and and computer sciences since 1968, Pro- intern at the Sarnoff Research Center, power modes that have since become com- fessor Meyer is known worldwide for Princeton, N.J., in 1965. After receiving his mo n p l a c e . the distinction of his graduate students doctorate, he worked on GaAIAs/GaAs Born in Streator, Illinois, on 25 March and for his text co-written with Paul R. laser physics and applications Philips Labo- 1945, Dan Dobberpuhl earned his bache- Gray, Analysis and Design of Analog ratory, Briarcliff Manor, N.Y. He joined lor’s degree in electrical engineering from Integrated Circuits, in its fourth edition. Rockwell International Science Center in the University of Illinois in 1967. He then Today, he is the UC Berkeley’s National 1978, where he was involved in the devel- went to work at the Department of Defense Semiconductor Distinguished Professor. opment of high-speed devices and circuits until 1973, when he joined General Electric Professor Meyer’s classes are in high based on III-V compounds and heterojunc- as an engineer in the integrated circuits cen- demand; Advanced Integrated Circuits tions. In 1991, Dr. Asbeck joined the Uni- ter. In 1977, he joined Digital Equipment, for Communications, a graduate class versity of California at San Diego, where he where he worked until 1998, except for a that he developed, regularly attracts is currently a professor in the department of two-year period beginning in 1979, when about twice the average enrollment for electrical and computer engineering. There, he worked at the chip design company, Inte- advanced graduate classes. He created he has developed a leading HBT program. grated Circuit Systems. an original reader for the class, which Peter Asbeck was born in Cleveland, In 1998, Mr. Dobberpuhl co-founded includes topics like cross-modulation Ohio, in 1947. He attended the Massa- SiByte, Inc., where he served as president and intermodulation in high frequency chusetts Institute of Technology, where and chief executive officer until its acquisition integrated circuits. he received both his bachelor’s and by Broadcom Corporation in 2000. He is Robert G. Meyer was born on July master’s degrees in 1969 and his doc- now is vice-president and general manager 21, 1942, in Melbourne, Australia. He toral degree in 1975, all from the elec- of the Broadband Processor Business Unit at received his bachelor’s degree in elec- trical engineering department. Br o a d c o m . trical engineering with first class hon- A Fellow of the IEEE, Dr. Asbeck is A member of the IEEE, Mr. Dobberpuhl ors in 1963, his master’s degree in also a distinguished lecturer for the has published many papers on circuits and engineering science with honors in IEEE Electron Devices Society and for microprocessors, and has participated in ISS- 1965, and his doctoral degree in the Microwave Theory and Techniques CC, IEDM, DAC and ISLPED conference pan- 1968, all from the University of Mel- Society. He holds 11 patents and has els, and presented invited papers at ESSCIRC bourne, Australia. contributed to more than 200 research and ISLPED. He has 15 patents issued or A Fellow of the IEEE, Professor Mey- publications. His honors include being pending and is co-author of The Design and er has served the Institute in a number named Engineer of the Year from Rock- Analysis of VLSI Circuits, a leading text in the of ways, including as president of the well International Science Center. field. Forbes Magazine named him among Solid-State Circuits Council of the IEEE the 100 most influential people in high-tech, and a member of the Editorial Board of Daniel Dobberpuhl and EE Times called him one of the 40 forces the IEEE Press. He has earned many of Broadcom Corpora- shaping the semicon- awards and honors, including the J.J. tion won the 2003 Sol- ductor industry. Thomson Premium from the Institution of id-State Circuits Electrical Engineers for research on Award. His citation Robert G. Meyer noise in transistor mixers. In 1975, he states, "For pioneering of University of Cali- was a visiting professor in the electrical design of high-speed fornia, Berkeley won engineering department of the Catholic and low-power micro- the 2003 IEEE Leon University of Leuven, Belgium, and in pr o c e s s o r s " . K. Kirchmayer Grad- 1996, he was a visiting professor in Dan Dobberpuhl’s microprocessor work uate Teaching the electrical engineering department of has consistently advanced the state of the Award. His citation Columbia University, New York. 15 25 EDS Members Elected to the IEEE Grade of Fellow Effective 1 January 2003

Heinrich P. Baltes, ETH Zurich, William D. Greason, Ontario, Tadashi Nishimura, Hyogo, Japan Zurich, Switzerland Ca n a d a for leadership in the development of for contributions to the development and for contributions to the fundamental princi- advanced CMOS devices and process commercialization of CMOS based MEMS ples of electrostatic discharge and its effect te c h n o l o g i e s on electronic devices and systems Bernhard E. Boser, University of Tadahiro Ohmi, Sendai, Japan California, Berkeley, CA, USA Dong-Seok Hyun, Seoul, Korea for contributions and leadership in semi- for contributions to integrated MEMS and for contributions to the design, analysis, conductor engineering learning algorithm. and implementation of high performance power conversion systems and for leader- Umberto Ravaioli, Urbana, IL, USA Zoltan J. Cendes, Ansoft Corpora- ship in power electronics education for contributions to Monte Carlo simulation tion, Pittsburgh, PA, USA of electron devices for contributions to the application of finite Thomas N. Jackson, University element modeling to microwave guides, Park, PA, USA Bruno Ricco, Bologna, Italy structures and circuits for contributions to GaAs MESFETS and for contributions to thin oxide MOS thin-film transistors devices and non volatile memories Bruce G. Danly, US Naval Research Laboratory, Washington, DC, USA Kristina M. Johnson, Durham, NC, Mark J. Rodwell, Santa Barbara, for contributions to the development of high- USA CA , USA power millimeter-wave sources for fusion, for contributions to optoelectronic process- for contributions to high speed electron accelerator, and defense applications ing systems and liquid crystal devices devices and integrated circuits

Gracie E. Davis, La Qunita, CA, USA Nan M. Jokerst, Atlanta, GA, USA Dierk Schroeder, Munich, Germany for contributions to the development of for contributions to the integration and for contributions to modeling of power radiation-hard electronic components for packaging of optoelectronic devices for semiconductors for circuit design military and space applications the realization of optical interconnections and interfaces Alan C. Seabaugh, Notre Dame, IN, Mohamed J. Deen, Dundas, ON, USA Canada Kinam Kim, Yong-in City, Korea for contributions to high speed and nano- for contributions to modeling, noise, and for contributions the development of high- electronic device and circuit technology parameter extraction in silicon transistors density dynamic random access memory and high speed photodetectors Elias D. Towe, Pittsburgh, PA, USA Hoi-Sing Kwok, Hong Kong, China for contributions to nanostructure optoelec- Georges J. Faillon, Velizy, France for pioneering research in liquid crystal tronic technology for contributions to applications of high effi- display technology ciency-high power klystrons and gyrotrons Steven H. Voldman, Hiroyuki Matsunami, Kyoto, Japan Essex Junction, VT, USA David J. Frank, Yorktown for contributions to Silicon Carbide epitaxi- for contributions to electrostatic discharge Heights, NY, USA al growth technology and transistors protection in CMOS, silicon on insulator, for contributions to solid-state devices and and RF silicon germanium technology ultra-small CMOS devices

The Nominations of the Following IEEE Members W er e Evaluated by EDS But the individuals are Not Current Members of EDS Teruaki Aoki, Tokyo, Japan Shang-Yi Chiang, Hsin-Chu, Taiwan David L. Harame, Essex Junction, for leadership in consumer electronics for technical leadership in developing and VT, USA and contributions to semiconductor elevating silicon foundry technologies for contributions to the development of t e c h n o l o g y SiGe Heterojunction Bipolar Transistor William J. Gallagher, Yorktown and BiCMOS technologies David L. Cave, Tempe, AZ, USA Heights, NY, USA for contributions to analog product devel- for contributions to the development of Burn Jeng Lin, Hsin Chu, Taiwan opment and smart power devices oxide-barrier tunnel junctions for supercon- for contributions to lithography theory, tool- ducting and magnetic device applications ing, masks, and fabrication technology 16 Report of the EDS Regions 4-6 Chapters Meeting On Dec. 8, 2002, the gon, Pikes Peak, University of Illinois) Student Branch, were able to use the regu- EDS Regions 4-6 Chap- reported their recent activities as well as lar seminars to attract DL visits. ters Meeting (Central, their future plans, and two chapter part- The web based announcement and bul- Southwestern & Western ners (Albert Wang and Yuhua Cheng) letin mailing by the local IEEE Section was USA) was held at the reported the highlights of their recent vis- used by many chapters to reach the local Hilton & Towers Hotel, in its to the chapters. chapter members. The chapters commented San Francisco, CA in In addition to the annual chapter subsidy that the EDS Chapter Subsidy Program was conjunction with that the chapters receive, the discussion cen- very helpful in facilitating the chapter meet- IEDM’02. The meeting was attended by tered on how they can apply for additional ings and for obtaining additional resources representatives from 10 chapters of the support for sponsoring the travel of Distin- from the local IEEE Section. In 2002, there North America West (NAW) Region, sev- guished Lecturers (DLs) from the EDS DL Pro- were two new technical workshops orga- eral chapter partners, SRC Chairs and gram, and how to obtain a partial matching nized by chapters (Boise and Phoenix) with Vice-Chairs, James Kuo, Chair of the of funds from the SRC-NAW fund. the NAW, and both were well attended. Membership Committee and Ilesanmi Due to the vast area of the NAW During the meeting, Paul Yu discussed Adesida, Chair of the Educational Activi- Region, there are now 4 Vice-Chairs the SRC-NAW goals for the coming year, ties Committee. assisting the Chair in coordinating the DL i.e.: continue to assist some chapters in The meeting was started by Paul Yu, and chapter partner visits to the chapters. NAW to become active chapters via the Chair of the SRC-NAW, who introduced Some chapters, like the Pikes Peak and various programs within the society; pro- Hiroshi Iwai, who is stepping down as Denver chapters, have very few EDS mem- mote the well organized chapters to fur- Chair of EDS Regions/Chapters Commit- bers in their chapters and are geographi- ther their activities through workshops and tee and Cor Claeys, the incoming Chair of cally isolated. Some use a university the planning of the Chapter of the Year the committee. The SRC Vice-Chairs and campus for the meeting site to encourage nominations; and identify and promote the chapter partners were also recognized. participation from both academia and formation of new student chapters in The meeting aimed at bringing togeth- industry. Chapters with a strong presence strategic areas within Regions 4-6. er the chapter leaders within the SRC- of the electronic industry, like the Boise, NAW to discuss the various issues Idaho and the Chicago chapters, were confronting the chapter and their mem- able to hold many technical meetings Paul Yu, SRC-NAW Chair bers. In this meeting, seven chapters each year with good attendance. The stu- University of California at San Diego (Boise, Chicago, Dallas, Denver, Ore- dent chapters, like the University of Illinois La Jolla, CA USA Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade! Armin G. Aberle Fernando J. Guarin* Dain C. Miller Danny Shum Bruno Allard Mark D. Hall Byoung Woon Min Malcolm H. Smith Hugh J. Barnaby Hideki Hayashi Lawrence Nagel Roger W. Sudbury Duane Boning* Pavel Hazdra Victor I. Naidenko* Richard M. Swanson Thomas Brazil Werner Hoelzl* Andrew Oliver Richard R.A. Syms Osvaldo F. Buccafusca Atsushi Hori Piotr Pawlowski* Hark Hoe Tan Eng Fong Chor Sandra L. Hyland Unil Perera Hidehiko Tanaka Kukjin Chun Tadao Ishibasi Fred R. Phelleps Anatoly S. Tischenko Stephen Clements Hiroshi Ito Paul A. Potyraj Hironori Tsukamoto William D. Cowan Alvin J. Joseph* A.B.M. Harunur Rashid* Kuei-Ann Wen Kobchai Dejhan Michael J. Kelly Mark Rodder* Scott F. Wetenkamp Steven Durbin Steven J. Koester David B. Scott Hei Wong* Taylor Efland* Subramanian Krishnan Pankaj Shah J.P. Xanthakis Robert H. Eklund* Ellen Y. Lan Vashisht Sharma* Chenggang Xie Denis Flandre Michael S. Liu* Shye Shapria Ilgu Yun Gregory Freeman Rajeev Malik Ali Sheikholeslami Carina I. Zaring George E. Georgiou* Philip J. Marshall Joseph S. Shor Yong-gang Zhang Robert I. Gresham

* = Individual designated EDS as nominating entity If you have been in professional practice for 10 years, you a letter will be sent to employers, recognizing this new status. may be eligible for Senior Membership, the highest grade of For more information on senior member status, visit membership for which an individual can apply. New senior mem- ht t p : / / w w w . i e e e . o r g / m e m b e r s h i p / g r a d e s _ c a t s . h t m l # S E N I O R M E bers receive a wood and bronze plaque and a credit certificate M To apply for senior member status, fill out an application at for up to US $25 for a new IEEE society membership. In addition, ht t p : / / w w w . i e e e . o r g / o r g a n i z a t i o n s / r a b / m d / s m e l e v . h t m . 17 18

EDS Distinguished Lecturers/Chapter Partner Visits China Report on WIMNACT 2002 in China

The 1st Workshop and IEEE EDS addition to the four DL talks, there was by Z. Y. Wang from Beijing Univ enti- Mini-colloquia on NAnometer CMOS a lecture given by Z. Wang from South- tled, “Reliability of nm MOS Devices“. Technology (WIMNACT 2002) was east Univ entitled, “Fabless Design of There were more than 70 attendees. In held Nov. 18-26, 2002 in four cities RF-and OE-IC’s“. There were more than the EDS member meeting, Prof. Liao (Beijing, Shanghai, Nanjing, Xi’an) in 100 attendees. In the afternoon, we presented the Beijing Chapter activity China. The speakers are composed of had a discussion and meeting with the report. It currently has 274 members, four partners and DL’s sent from EDS EDS members in the Nanjing area. It which is a significant increase from 12 and additional local people. The titles currently has 24 members (7 senior in 1998. Some people asked for more of the four talks were as follows; members), and expects more in 2003. EDS coverage on vacuum electronics “Advanced CMOS Technology for sub- People in Naning want more EDS cov- technology.In summary, China’s interest 70nm and Further Below“, by Hiroshi erage on display technology. We also in semiconductor technology in con- Iwai; “Impact of nm CMOS Technology discussed the possible formation of a junction with the rapid growth in her on RF Circuit and System“; by Kwyro new chapter in this area.WIMNACT- semiconductor industry has been grow- Lee; “Ultra Shallow Junction for Sub- Xi’an was held on Nov. 25, 2002, ing extremely fast recently and the stu- 100nm Silicon Technology“, by Bunzi which was organized by Prof. Y. -M. dents in universities, especially, are Mizuno; “Advanced STI and Silicide Zhang of Xidian Univ. In addition to the very eager for knowledge in recent Process Integration beyond 90nm three DL talks, there was a lecture given advances in semiconductor technology. Node“, by Kevin Liang-Kai Han. by Y. Hao from Xidian Univ entitled, We feel that WIMNACT-China was WIMNACT-Shanghai was held on “The Microelectronics Industry in very timely and our mission is success- Nov. 19, 2002, and was organized by Xi’an“. There were more than 170 fully accomplished. Prof. B. -Z. Li of Fudan Univ. In addition attendees. The Xi’an area currently has to the four DL talks, there was a lecture 30 EDS members (7 senior members). given by Simon Yang from SMIC enti- We discussed the possible formation of Hiroshi Iwai tled, “Beginning of Sub-100nm Era of a new chapter in this area and took a Tokyo Institute of Technology China’s Semiconductor Industry“. There tour of the Xi’an new science park. Yokohama, Japan were more than 170 attendees.WIMN- WIMNACT-Beijing was held on ACT-Nanjing was held on Nov. 21, Nov. 27, 2002, and was organized by Kwyro Lee 2002, and was organized by Prof. Q. - Prof. F. -J. Liao of Beijing Univ. After KA I S T A. Huang of Southeastern Univ. In three DL talks, there was a lecture given Taejon, Korea

BeijimgChapter Meeting on November 27, 2002 EDS Meeting in Xi’an, Xidian Univ. on November 25, 2002 19

Summary Of Changes To The EDS Constitution & Bylaws

At its 8 December 2002 Meeting, the revision. Specifically, the addition of the By l a w s EDS AdCom approved changes to the word "engineering" and the phrase Section 10/Society Funds EDS Constitution & Bylaws. The IEEE "organic and other emerging materials Change the title of Executive Officer to Technical Activities Board has also based devices" will correct this situation. Executive Director as implemented by IEEE approved these changes at its 14 Febru- The field of interest for EDS is all aspects in February, 1994. ary 2003 meeting. A summary of these of the physics, engineering, theory, and changes is indicated below. The complete phenomena of electron and ion devices Section 12.1/Technical Committees Constitution and Bylaws may be obtained such as elemental and compound semicon- Create a new AdCom position, EDS from the EDS Executive Office or on the ductor devices, organic and other emerg- Technical Committees Chair as approved web at www.ieee.org/eds/ (click on ing materials based devices, quantum effect by AdCom in December, 2002. This Administrative Committee). devices, optical devices, displays and new position will help implement a recent- imaging devices, photovoltaics, solid-state ly developed Society strategic plan posi- Co n s t i t u t i o n sensors and actuators, solid-state power tion, "To broaden the base of technical devices, high frequency devices, microme- areas of interest". Section 10.13: (ED-15) Field of Interest chanics, tubes and other vacuum devices. St a t e m e n t The society is concerned with research, Although the current statement, which development, design and manufacture relat- has been in place for over fifty years, accu- ed to the materials, processing, technology, rately represents the interests of the Soci- and applications of such devices, and the Steven J. Hillenius ety, it is not explicit in some respects. This scientific, technical and other activities that Agere Systems generates room for confusion, hence this contribute to the advancement of this field. Allentown, PA

IEEE Transactions on Device and Materials Reliability Call for Papers

In an era of rapidly increasing density and integration of Papers to be published in the IEEE Transactions on Device devices, IEEE Transactions on Device and Materials Reliabili- and Materials Reliability are sought in the following areas: ty (T-DMR) is dedicated to providing leading information that • Mechanisms of failure of electronic devices and materials is critically relevant to the creation of reliable products. This • Influence of fabrication processes on failure mechanisms fully peer-reviewed archival publication is available online • Theoretical modeling and simulation of failure mechanisms and via quarterly library subscription. The broad scope of T- • Reliability testing and screening methodologies for DMR includes, but is not limited to: materials and devices • The reliability of electronic, optical & magnetic devices, • Reliability impact of device and circuit design, material, MEMs devices Microsystems & packages and process selection • The reliability of the materials used in these devices, The intent of the T-DMR is to facilitate rapid dissemination micro-systems and packages of new research findings. The Editorial Board strives to expe- • Properties of the interfaces, surfaces, and microstructure dite publication to ensure rapid dissemination of new results. that impact the reliability of materials Manuscripts will appear online shortly after acceptance for • Fabrication processes that modulate materials and publication. Current publication statistics for T-DMR indicate device reliability that first reviews are complete in less than 2 months while Original work is solicited on the measurement, physical accepted manuscripts are published on-line on average in less analysis, and fundamental understanding of the reliability of than 4 months. electronic devices and materials from the concept stage Manuscript submission details and instructions for authors through research and development, and during manufacture. can be obtained at www.ieee.org/tdmr/emanuscript. 20

Regional and Chapter News

USA, Canada and of Albany, School of NanoSciences and The technical program was very strong Latin America Engineering, on “Integrated Circuit Fabri- this year. It began with two tutorials, cation Technology and Yield Control“. The “Molecular Electronics: What will be (Regions 1-6, 7 & 9) afternoon sessions consisted of two invited the Reliability Issues“, was authored by Dr. ED Washington/Northern Virginia talks and six contributed talks. A. Kuliev of John Suehle of NIST. John’s talk centered - by Murty Polavarapu the Department of Electrical and Electronic about the use of organic molecules as On November 12, the Washington Engineering, University of Illinois at switching devices. Given the present /Northern Virginia EDS Chapter met at Urbana-Champaign, delivered the first 120nm MOS node of present state of the Micron Technology, Manassas, Va to hear invited paper (co-authored by Dr. I. Adesi- art technology MOS systems, a molecular a lively presentation entitled “DRAM Tech- da) on “GaN HEMTs (High Electron Mobil- device would be ~60,000 times smaller, nology Evolution - Past Trends and Future ity Transistors)“. The second invited talk indicating a P4 processor designed as a Projections“ by Dr. Scott Meikle of Micron was on “Mobility Enhancement in Strained molecular device would occupy only a Technology. Silicon“ by Dr. D.K. Sadana of IBM, 100_m2 area! Success in Dynamic Random Access Hopewell Junction, NY. The contributed The second tutorial, “New Age Elecrtro- Memory (DRAM) manufacturing requires talks spanned a wide array of topics migration Testing“, was authored by Dr. leading edge technology for small chip including CMOS devices, opto-electronic Jim Lloyd of IBM Research. Jim contrasts sizes and innovative cell designs and devices and resonant tunnel diodes. The the differences between Al/Cu alloys and process flows to achieve high yield and conference ended with a poster session CU BEOL systems and the reliability chal- lowest possible cost per chip. Dr. Meikle and reception. lenges one face in the newer advanced Cu highlighted how over the last decade The attendees numbered over 100, system. For example, in an Al system shrinking geometries led to two diverging including over 50 IEEE members and many Al2O3 forms as a barrier that inhibits diffu- paths in DRAM process technology with students (mostly from RIT and the University sion through SiO2. Noble metals (Cu, Ag, trench or stack capacitors. of Rochester). Please visit http://www. Au) diffuse readily through dielectrics, He also discussed potential solutions for microe.rit.edu/eds.html for additional especially SiO2. Adhesion of Cu to most challenges such as capacitor dielectrics in information, and to download the confer- materials is poor. If Cu interface is well the coming years. Larger wafer size ence proceedings. passivity, the EM behavior is excellent, if (300mm) will also provide an economy of – Murty S. Polavarapu, Editor not then the natural barrier (taken for scale in the coming years. The talk was fol- granted) in the Al lowed by a window tour of the Micron IEEE Integrated Reliability System becomes one of the reliability Technology, Virginia facility. Workshop: IRW 2002 Review challenges of a Cu based system. - by William R. Tonti Following the tutorials, Dr. William Ton- The 26th Annual EDS/CAS Activities The IEEE Integrated Reliability Work- ti of IBM Microelectronics presented an in Western New York Conference shop was held in South Lake Tahoe on invited lecture entitled “Technology on the - by Karl D. Hirschman, Ph.D. Fallen Leaf lake at the Stanford Sierra Edge“. Bill’s talk focused on: Describing The EDS/CAS Activities in Western New Campus October 21-24, 2002. Linda the semiconductor industry entering an era York Conference is a relatively small confer- Head of Rowan University served as the where extraordinary opportunities for new ence held at the Rochester Institute of Tech- General Chair, and Gennadi Bersuker of applications in pervasive markets will drive nology in Rochester NY, which is in Sematech served as the Technical Pro- the push for higher circuit density, greater between Buffalo and Syracuse, south of gram Chair. The conference attendees speeds, and better power dissipation. This Lake Ontario. The focus of the conference is numbered ~85 this year, up considerably push is at the heart of some of the latest to bring engineers and researchers together from the 2001 attendance. advances that have occurred, including the to share information on a wide variety of During our first evening together, Dr. integration of low-resistance conductors, topics related to microelectronic devices and Harry Schafft of NIST, gave a 21year his- insulated substrates, and band-gap engi- systems, allowing one to become acquaint- torical perspective of IRW. As it turns out, neered devices. ed with others of similar interest in nearby Harry has attended IRW for its entire IRW had an excellent keynote speaker, locations. The conference was held this past 21year history and shared quite a bit of John Bridwell of Motorola, whose talk was year on November 6, 2002, marking the technical triumphs and humor emanating entitled: “Embedded Non-Volatile Memory 26th annual event. The conference was from his IRW tenure. Harry reminded the Qualification Methodology for Automotive coordinated by the ED Rochester chapter, audience that IRW is technically and finan- Applications“ John contrasted the reliability and chaired by Dr. Karl D. Hirschman, ED cially sponsored by both the IEEE Reliabili- requirements for Motorola to insure NVM Rochester co-chair and associate professor ty and Electron Devices societies, which reliability, given the automobile industries of microelectronic engineering at RIT. over the years has provided the prestige new drive to embed electronics in the actu- The full-day event started with a work- and recognition that has kept the work- al system unit, implying harsh environmen- shop led by Dr. E. Levine of the University shop a technical melting pot. tal operating conditions. 21

As typical with the IRW workshop, atten- Georgia Chapter October 10-13, 2002, at dees ask questions and exchange ideas Tbilisi State University, Tbilisi, Georgia with an author during his presentation. under the technical co-sponsorship of EDS Authors then return to their respective home as well as the MTT, AP, CPMT, and SSC base and consider the attendees questions societies and the Ukraine Section. The vol- and formalize their responses in concert ume of Seminar Proceedings is included into with the theme of their paper. This becomes the IEEE Book Broker Program. the published IRW final report, and is The 33 papers from Georgia, Ger- released in the December 2002 - January many, Poland, Russia, Taiwan, USA, and 2003 time frame. One may order this IEEE Ukraine were presented at the Seminar in final report by navigating to www.irps. 5 sessions: org/irw. In effect, it contains more material • Propagation and Scattering in Non- than presented at the conference, and homogeneous Media serves as the IRW legacy, as well as a cited • Electrodynamics of Crystals and reference. Due to its unique style of having Waveguide Structures the attendee feedback intertwined with the • Antennas and Scattering report, one may consider this as a virtual • Waveguides and Transmitting Lines IRW. I encourage you to order a final report • Synthesis Theory and Acoustics Dr. Sc., Professor Sergey V. Zagriadski and see for yourself! The most interesting presentations were All in all the conference was a great suc- as follows: Sergey V. Zagriadski was born in St. cess, with ample time allotted for one on ’The asymmetry of the near field of non- Petersburg, Russia in 1954. He received one discussions as well as the late evening superdirected small antenna’ B. Z. Kat- the degrees of Research Engineer in SIGs (special interest group meetings). IRW senelenbaum, Moscow, Russia ’On the 1977, Candidate of Sciences (Ph.D.) in is looking forward to 2003 and another theory of symmetric short vibrator’ G. Sh. 1987 and Doctor of Sciences (Dr.Sc.) in exciting year in the world of microelectron- Kevanishvili, Tbilisi, Georgia; and ’Electro- 1997, all in Radiophysics, from St. ic reliability. (http://www.irps.org/irw) magnetic imaging for a conducting cylin- Petersburg State Technical University (for- – Sunit Tyagi, Editor der buried in the three layers structure’ merly Leningrad Polytechnic Institute). In Chien-Ching Chiu, Tamsiu, Taiwan. 1977 he joined the Department of Radio- Young scientists, students, and Ph.D. physics of this Institute and served this Eu r ope, Middle East students participated in the DIPED-2002 Department until last year. He was & Africa (Region 8) as well. The Best Paper Awards have engaged in the filters and power termina- been traditionally established by the tors, ferromagnetic tunable oscillators, MTT/ED/AP/CPMT/SSC West Ukraine Organizing Committee for young magnetostatic wave devices. - by Mykhailo I. Andriychuk speakers. This year three young speak- He served as Professor and Director of The VIIth International Seminar/Work- ers were recognized for their presenta- Microwave Ferrite Devices Laboratory of St. shop on Direct and Inverse Problems of Elec- tions. They were: Giorgi Ghvedashvili Petersburg State Technical University. His tromagnetic and Acoustic Wave Theory (Tbilisi State University, Tbilisi, Geor- research interests were connected with elec- (DIPED-2002) was organized and success- gia), David Kakulia (Tbilisi State Uni- tromagnetic theory of microwave ferrite, sim- fully held by the IEEE MTT/ED/ versity, Tbilisi, Georgia), Oleg Kusyi, ulation of multi-layer microwave integrated AP/CPMT/SSC West Ukraine Chapter (Pidstryhach Institute of Applied Prob- circuit and radiating structures on the base together with the IEEE MTT/ED Republic of lems of Mechanics and Mathematics, of thin ferrite films, investigation of magneto- NASU, Lviv, Ukraine) static spin-wave passive and active devices The next annual Seminar/Workshop (including filters, delay lines, power termina- DIPED will be held September 23-25, tors, signal-to-noise enhancers, oscillators, 2003, at Pidstryhach Institute of Applied active filters, etc.) and complex composites Problems of Mechanics and Mathematics, containing the ferrite. He has published NASU, Lviv, Ukraine. For more informa- over 60 scientific papers in this field and tion, please contact Dr. Mykhaylo I. has received 8 national Patemts on magnet- Andriychuk via e-mail andr@iapmm. ic tunable microwave oscillators. He was an lviv.ua, and Dr. David D. Karkashadze via e- IEEE member and an active member of mail [email protected], or visit the West New York Academy of Sciences. In 1995, Ukraine Chapter Web Site at http://www. he was an invited lecturer at Beijing Institute ew h . i e e e . o r g / s o c / c p m t / u k r a i n e . of Radio Measurement (China). Until last years he served as chair of the IEEE ED/MTT/AP St. Petersburg ED/MTT/AP Joint St. Petersburg Chapter. - by Margarita F. Sitnikova Margarita F. Sitnikova has been On behalf of the staff of the IEEE appointed to serve as the new chair of the ED/MTT/AP Joint St. Petersburg Chapter, I ED/MTT/AP St.Petersburg Chapter. would like to to inform you with a great sor- Margarita F. Sitnikova received her The DIPED-2002 young speaker award recipients row that the IEEE ED/MTT/AP Joint St. diploma of Electronics Engineer (MS (from left to right: Oleg Kusyi, Giorgi Ghvedashvili Petersburg Chapter Chair, Dr. Sc., Professor degree in Electronics Engineering) and the and David Kakulia) Sergey V. Zagriadski, died in June, 2002. Ph.D. degree from St. Petersburg State 22

During the conference, the meeting of tled “Photonics in the Information Age: the IEEE ED Poland Chapter will be orga- Applications to Communications, Measure- nized. All people interested in this meet- ments and Solid-State Lighting“ ing, in particular all the members of the – Andrzej Napieralski, Editor Poland Section of IEEE, are invited to take part in the event. For more information ED Israel please refer to http://www.mixdes.org. - by Prof. Nathan Croitoru Starting from this year, the IEEE ED On Monday, December 23, 2002, Poland Chapter is technically co-sponsoring at the Holon Inst. of Technology (HAIT) the symposium “Diagnostic and Yield - – Holon a talk entitled, “Do we teach Advanced Silicon Devices and Technologies them how to think?“ was given by Prof. for ULSI Era“. The 6th edition of the sympo- Daniel Raviv, Ph.D., of Florida Atlantic sium will be held from June 22nd to 25th, University, USA. 2003, in Warsaw, Poland (for more infor- Ab s t r a c t : mation, please contact Mrs. Lidia Lukasiak: In today’s global marketplace, the pace Dr., Assoc. professor Margarita F. Sitnikova, Chair [email protected]). The chapter has of competition, the increasing demands of of IEEE ED/MTT/AP Joint St. Petersburg Chapter also started to provide technical co-sponsor- customers, and the explosion of knowledge, ship of the Polish bulletin “Elektronizacja“ there is a need for innovative out-of-the-box Electrotechnical University ’LETI’ (formerly (eng. “Electronisation“) edited by the Associ- thinkers. Students are not being encouraged Leningrad Institute of Electrical Engineer- ation of Polish Electrical Engineers devoted to think and are losing basic skills for defin- ing) in 1967 and 1974, respectively. Cur- to development in Polish electronics. ing, understanding and solving problems. In rently she is an Associated Professor for this presentation, we’ll discuss the problem Department of Microelectronics and Radio ED Sweden and suggest some solutions. Engineering of St. Petersburg State Elec- - by Mikael Östling Biography of Dr. Daniel Raviv: trotechnical University. Her general During April and June the Sweden ED Dr. Daniel Raviv is a professor and research interests are connected with solid- Chapter arranged two technical seminars inventor in the College of Engineering at state physics and microwave electronics with many participants. Professor Herman Florida Atlantic University (FAU). His main including microwave applications of high Schumacher, University of Ulm, Germany, research is in the areas of active-vision sys- temperature superconductivity. Since visited the chapter and presented a talk on tems, autonomous robotic vehicles (driver- 1998, she is an active IEEE member. Silicon-based front-end ICs for the 24 GHz less cars), and inventive/innovative thinking. – Alexander V. Gridchin, Editor ISM band. In the talk, Prof Schumacher dis- He received the B.Sc. and M.Sc. degrees in cussed the present status of commercially Electrical Engineering from the Technion in ED Poland available SiGe HBTs and their utilization in Haifa, Israel, in 1980 and 1982, respec- - by Andrzej Napieralski building blocks or fully integrated 24 GHz tively, and the Ph.D. degree in Electrical On 17 December 2002, the Depart- receivers on silicon. Engineering and Applied Physics from Case ment of Microelectronics and Computer In June, we had a visit by Dr Dietrich Western Reserve University, Cleveland, Science of Technical University of Lodz Stephani, president of SiCED (a Siemens Ohio in 1987. Dr. Raviv is also a graduate organized an IEEE meeting entitled “Analy- company), who presented a talk on of the Institute of Inventive Thinking (IIT), sis And Synthesis of the AD CMOS Circuits Prospects of SiC Power Devices. Dr national inventors hall of fame recently he with Special Consideration of SC Filters“. Stephani gave a very vivid lecture on the was awarded a Guinness world record. During the meeting the problems of design- current technological challenges in a start- Chairmen of the meeting: Prof. Nathan flow optimisations and improvements of up company in SiC Power Devices. Croitoru and Dr. Gady Golan - 60 people, switched-current filters were discussed. During July, the chapter was visited by students and academic staff, attended the From June 26 to 28, the 2003 10th two IEEE Fellows and distinguished lectur- meeting in Holon. anniversary of the MIXDES Conference ers. Dr Ted Kamins, HP Labs, Palo Alto, – Gady Golan, Editor “Mixed Design of Integrated Circuits and CA, presented a lecture “Advanced Device Systems“ co-sponsored by IEEE will be held Concepts and Research Self-Assembled in Grand Hotel, Lodz, Poland. The areas Na n o s t r u c t u r e s “ Asia & Pacific of interest are as follows: Prof C. Jagadish, Australian National Region 10 1. Design of Integrated Circuits and University, visited a week later presenting Mi c r o s y s t e m s his lecture on “Quantum Well Intermixing ED/LEO Australia 2. Thermal Issues in Microelectronics for Optoelectronic Device Integration“. - by C. Jagadish 3. Analysis and Modelling of IC and During the Fall we had two more techni- The Conference on Optoelectronic and Mi c r o s y s t e m s cal seminars by Dr Robert Romanofsky, Microelectronic Materials and Devices was 4. Microelectronics Technology and NASA Glenn Research Center, Cleveland, held at the University of New South Wales, Pa c k a g i n g OH, USA presented a lecture on Sydney during 11-13 December, 2002 and 5. Testing and Reliability “Microwave Applications of Ferroelectric was chaired by Professor Michael Gal. The 6. Power Electronics Films“ and the last ED 2002 seminar was Conference was a grand success with 2 ple- 7. Signal Processing presented in December by Waguih S. nary talks, 14 invited talks, 50 oral con- 8. Embedded Systems Ishak, Director, Communications & Optics tributed papers and 100 poster contributed 9. Medical Applications Research Laboratory, Agilent Laboratories, papers. The proceedings of the Conference 10 . Ed u c a t i o n Palo Alto, CA. His presentation was enti- will be published by IEEE publishing Co. 23

replacement for silicon dioxide in low- power CMOS applications. For more information, please contact Prof. MB Patil, Electrical Engineering Depart- ment, IIT Bombay, Powai, Mumbai 400076, India, Email: [email protected].

ED/MTT India - by Dr. K.S. Chari The Chapter, in association with the IEEE Student Branch at Jamia Milia, Delhi and IEEE Delhi Section organized a major student festive “Encomium 2002 An intellec- tual odyssey“ on the 30th of October. The event featured 3 sectional contests - Ratio- nale (paper presentation) , Eniac (software Prof. Nitish Thakor with faculty member and students at IIT Bombay design), and Enigma (quiz). Five Hundred Prof. Gottfried Dohler from the Univer- described physical principles, output participants from colleges all over India sity of Erlangen, Germany visited the stages, design issues, and noise charac- came to this festival. Rationale witnessed Chapter and gave a seminar at the Aus- teristics of CCD imagers. Dr. Rajendra 70 entries covering presentations on differ- tralian National University on December Patrikar, Institute of High-performance ent aspects of electronics, molecular 9, 2002 on “ Electroabsorption studies of Computing, Singapore, presented a semi- devices, bio-medics, etc. The best papers InAs Quantum Dots in vertical and in- nar on “Design of embedded system on from these presentations were selected for plane electric fields“. chip for reliability“ on October 21, awards by the Chapter and the following 7 Professor David Pulfrey, from the Uni- 2002. Dr. Patrikar discussed the impact teams have won prizes. Prof Mini Thomas, versity of British Columbia, an IEEE Distin- of failures such as single event upset on IEEE Jamia Student Branch Counselor coor- guished Lecturer and elected member of embedded systems and ways to deal with dinated the event. EDS AdCom, visited the Chapter and gave this problem at the design stage. The Chapter organized a lecture, a seminar on “Carbon nanotube field- On November 28, 2002, Prof. Nitish “Speeding RTL to Silicon,“ by Mr. Suresh effect transistors“ on December 17, 2002 Thakor, from the John Hopkins University Naik from Digpro Design Automation at the Australian National University. School of Medicine gave a talk on Ltd., Bangalore. The event was attended For more information, please contact “Micro/Nanotechnology in Biomedicine.“ by over 80 participants from academia, Prof. Chennupati Jagadish, Department of Prof. Thakor described several excellent R&D labs and industry. Electronic Materials Engineering, research devices such as advanced probes, The Chapter has co-sponsored the Inter- Research School of Physical Sciences and sensors and MEMS devices developed for national Symposium “ Recent advances in Engineering, Australian National Univer- neuroscience research. The talk attracted an Inorganic Materials“, organized by the IIT sity, Canberra, ACT 0200, AUSTRALIA, audience from a variety of disciplines Mumbai and Materials Research Society of Ph: 61-2-6125-0363, FAX: 61-2-6125- including EE, Biomedical Engineering and India during 11-13 December. The confer- 0511, Email: [email protected]. Mechanical Engineering. ence covered areas in magnetic and elec- On December 5, 2002, Dr. Ajit Shen- tronic materials, electro-optical materials, AP/ED Bombay ware, Texas Instruments, USA, gave a bio-materials and nano materials. A total of - by Prof. M.B. Tatil talk on “Electrical and reliability charac- 300 participants attended the conference. During October–December 2002, the teristics of HfSiON gate dielectric.“ He The Chapter has organized jointly with IIT Chapter organized the following events: presented I-V and C-V characteristics, sta- (Delhi) and MSoft Corporation (Singapore) a On October 10, 2002, Dr. J.N.Roy, bility, and reliability results for amorphous short course entitled “Microwave Compo- Semiconductor Complex Ltd., Chandi- HfSiON dielectric films. He commented nent Design using Software Tools“ during garh, gave a talk on “CCD Imagers.“ He on the suitability of this material as a 17-19 December, 2002. The event was intended to educate engineers/teachers/stu- dents about microwave component design using software tools for solving complex Elec- tro Magnetic problems. The faculties of the course were drawn from IIT and M/s Vision Technologies, Bangalore. A total of 31 par- ticipants from academia, the space applica- tion centre, defense research and industry attended the intensive sessions. The event was coordinated by Prof. S K Koul, IIT, Delhi.

ED Malaysia - by Burhanuddin Yeop Majlis The Chapter has successfully organized A section of audience at ENCOMIUM student festive held at Jamia Milia Delhi. the 2002 IEEE International Conference on 24

Semiconductor Electronics (ICSE2002) at talk, the progress of RF power devices the Gurney Resort Hotel and Residences in based on compound semiconductor mate- Penang from 19 to 21 December 2002. rials were reviewed. Two major applica- This is the fifth ICSE organized by the tion of those devices are the handy Chapter, technically co-sponsored by the terminals and base stations. The highest Electron Devices Society, in co-operation power-added-efficiency is the major con- with the Universiti Kebangsaan cern for the mobile terminals, while the Malaysia(UKM) and the Unversiti Sains latter one requires the high power trans- Malaysia(USM). The conference was spon- mitting capability with sufficient linearity. sored by Mems Technology Sdn, Bhd. and Compound semiconductor devices are Kriptic Devices Sdn Bhd. suited for those applications. The official The conference covers all aspects of the language was English. The number of semiconductor technology, from materials participants was 20 including foreign stu- issues and device fabrication, MEMS and dents in the doctoral course. We deeply Dr. Daisuke Ueda giving a Distinguished Lecture on microsensors, photonics technology, IC appreciate his devoted voluntary effort. 15 October 2002 in Kyoto Univ., Kyoto, Japan design and testing, manufacturing, and sys- – Hisayo S. Momose, Editor tem applications. The proceedings consist- Wang, TSMC, with focus on the “TSIA ed of 3 invited and 130 contributed papers ED Taipei 300 mm Automation Standard Task from all over the world. The participants of - by Steve Chung Force“ and the involvement of Taiwan the ICSE came from Singapore, China, The ED Taipei Chapter held a series of industries to the 300 mm Automation Japan, Korea, Thailand, UK., USA, Iran, Educational Lectures and sponsored two Standard. The topics for this year are Indonesia and Malaysia. We were delight- major conferences/workshops in the 4th focused on the manufacturing, control, ed to have three prominent speakers in quarter of 2002. logistics, and process of advanced microelectronics during the conference: Prof. Sheng Li from the University of CMOS technologies. Prof. Vijay K. Arora, IEEE Distinguished Lec- Florida held the first of the Education Lec- The 2002 IEDMS was held at the turer, presented a talk on The electron tem- tures. His talk, entitled “Multi-Color and National Taiwan University in Taipei, perature in nanostructures subjected to a Broadband Quantum Well Infrared Pho- Taiwan, 20-21December. More than high electric field; Mr. Sooriakumar, from todetectors for the Mid-, Long-, and Very 300 experts and authors from 9 coun- Mems Technology Sdn. Bhd lectured on the Long-Wavelength Infrared Applications, “ tries participated in this symposium. This Use of micro-machined accelerometer in was held on November 4 at the National year marks the 30th anniversary of the today’s world; and Prof. Arokia Nathan Chiao Tung University, Hsinchu, Taiwan. symposium, which was initiated in 1972 from the University of Waterloo, gave a This talk was attended by 150 partici- as a domestic conference for presenta- talk on a-Si:H back-plane electronics for pants. Another seminar was given at the tion of the latest advances in research medical imaging and OLED displays. National Taiwan University, Taipei enti- and technologies of electronic materials For more information, please contact tled, “Novel Devices and Materials for and devices. This symposium has been Prof. Majlis, Department of Electrical, Soc,“ by Lalita Manchanda, a DL and enlarged to an international biennial Electronics and System Engineering, Uni- Program Director of SRC. conference since its start in 1984. There versiti Kebangsaan Malaysia. Tel: 603- The two technical meetings/confer- was one plenary session, 24 oral ses- 89265861, FAX: 603-89259080, Email: ences held were the 2002 Semiconduc- sions, and 2 poster sessions with 3 ple- [email protected]. tor Manufacturing Technology nary speeches, 8 invited papers, and – Wee Kiong Choi, Editor Workshop (SMTW) and the 2002 208 regular papers presented. The ple- IEDMS (International Electron Devices nary session featured three speeches giv- ED Kansai and Materials Symposium), respective- en by three distinguished scholars: - by Hiroshi Nozawa ly. The former is mainly sponsored by “Nano CMOS Technology“ by Prof. C. This is a report of the technical activi- the TSIA (Taiwan Semiconductor Indus- Hu of the University of California at ties of the Kansai Chapter for the fourth trial Association), ED Taipei Chapter, Berkeley; “Quantum Dots for Lasers“ by quarter of 2002. A University Distin- and IEEE Taipei Section. The latter was Nobel Laureate, Prof. N. N. Ledentsov guished Lecture with Dr. Daisuke Ueda, sponsored by the ED Taipei Chapter as of the Loffe Institute, Russia; and “Pho- Director of Semiconductor Devices well as EDMA (Electron Devices and tonic Crystals“ by Dr. S. Y. Lin of Sandia Research Center, Matsushita Electric Materials Association). National Lab. In the 26 technical ses- Industrial Co. Ltd, Osaka, Japan, was The SMTW was held in Hsinchu as sions, a perceivable trend is the increas- held on 15 October 2002, at Kyoto Univ. follows: December 10-11, with more ing number of papers in the fields of in Kyoto, Japan. He is one of the leaders than 200 attendees and 28 papers nanostructures and devices, novel and in the semiconductor devices field. He selected for oral presentation and 36 ultra thin dielectrics, nitride-based com- also was appointed to Chair the ED Kan- for poster presentation. Three plenary pound semiconductors and devices, RF sai Chapter and his qualifications include talks were given as follows: Dr. Jyuo- devices and circuits, organic and thin- being a distinguished lecturer of EDS. The Min Shyu, ERSO/ITRI, entitled “The film devices for displays etc., consistent host was Hiroshi Nozawa, Past Chair of Impact of Nano-Technology on Taiwan with rapid advances in these areas all ED Kansai Chapter and professor of Semiconductor Industry“; “The SEMI over the world in recent years. For more Kyoto Univ. The title of the lecture was International Standards and the Semi- information, please check the web site “Review of Compound Semiconductor conductor Fab of the Future,“ by Bruce http://www.edsTaipei.edu.tw. Devices for RF Power Applications“. In his L. Gehman, CTO of SEMI; and Jason – Hei Wong, Editor 25

EDS Meetings Calendar (As of 20 February 2003)

The complete EDS Calendar can be found at our web site: http://www.ieee.org/organizations/society/eds/EDSCal.html. Please visit!

April 14 - 17, 2003, @ IEEE International Mgt Group LEOS, IEEE, 445 Hoes Lane, Piscat- gy Center, 12001 State Highway 55, Plymouth, Symposium on Power Semiconductor away, NJ, USA 08854 T e l: +1 732 562 3899 MN, USA 55441-4799 T e l: +1 763 954 2745 Devices & Integrated Circuits Lo c a t i o n : Cam- F a x: +1 732 562 8434 E - M a i l: leosconferences F a x: +1 763 954 2504 E - M a i l: benjamin.hock- bridge University, Cambridge, United Kingdom @ieee.org De a d l i n e : 12/3/02 ww w : http://www [email protected] D e a d l i n e: 2/28/03 w w w: Co n t a c t : Gehan Amaratunga, Cambridge Universi- .e c e . u c s b . e d u / I P R M 0 3 / ht t p : w w w . t r a n s d u c e r s 0 3 . o r g ty, Trumpington Street, Cambridge CB2 1PZ, Unit- ed Kingdom T e l: +44 1223 332638 F a x: +44 May 15 - 17, 2003, * IEEE Workshop on June 8 - 10, 2003, T IEEE Radio Frequency 1223 332616 E- M a i l : [email protected] De a d - Charge-Coupled Devices & Advanced Integrated Circuits Symposium L o c a t i o n: li n e : 1/31/02 ww w : http:www.ISPSD.org Image Sensors Lo c a t i o n : Schloss Elmau, Elmau, Philadelphia Convention Center, Philadelphia, PA, Germany C o n t a c t: Albert Theuwissen, Kleine USA C o n t a c t: Natalino Camilleri, RF & Wireless April 18 - 30, 2003, T Symposium on ULSI Schoolstraat, 9, B-3960 BREE, Elmau, Belgium Design Services Inc., 10812 Wilkinson Ave, Cuper- Process Integration Lo c a t i o n : Salon des Exposi- Te l : +32 89 472 672 Fa x : Not Available E- M a i l : tino, CA, USA 95014 Te l : +1 408 252 615 Fa x : tion, Paris, France C o n t a c t: Cor Claeys, IMEC, [email protected] D e a d l i n e: 2/21/03 w w w: +1 408 252 6590 E- M a i l : [email protected] Kapeldreef 75, Leuven, Belgium B-3001 Te l : +32 ht t p : / / w w w . d a l s a . c o m / i e e e - w o r k s h o p D e a d l i n e: 12/9/02 w w w: http://www. 16 28 1328 F a x: +32 16 28 1510 E - M a i l: rf i c 2 0 0 3 . o r g / i n d e x . h t m l [email protected] De a d l i n e : 10/1/02 ww w : Not May 27 - 30, 2003, # International Confer- Av a i l a b l e ence on Electron, Ion and Photon Beam June 10 - 12, 2003, @ Symposium on VLSI Technology and Nanofabrication L o c a t i o n: Te c h n o l o g y Lo c a t i o n : Rihga Royal Hotel, Kyoto, April 23 - 25, 2003, * IEEE International Sym- Tampa Marriott Waterside Hotel & Marina, Tam- Japan C o n t a c t: Phyllis Mahoney, Widerkehr & posium on Plasma- & Process-Induced pa, FL, USA Co n t a c t : Timothy Groves, Goschwitzer Associates, 16220 South Frederick Avenue, Suite Da m a g e L o c a t i o n: Altis Semiconductor, Paris, Strasse 25, 07745 Jena, Germany Te l : +49 3641 312, Gaithersburg, MD, USA 20877-4020 Te l : +1 France Co n t a c t : (Charles) Kin Cheung, Rutgers Uni- 651900 F a x: +49 3641 651922 E - M a i l: Timo- 301 527 0900 ext. 103 Fa x : +1 301 527 0994 versity, 94 Brett Road, Piscataway, NJ, USA [email protected] D e a d l i n e: E - M a i l: [email protected] D e a d l i n e: 08854 Te l : +1 732 445 0680 Fa x : +1 732 445 1/7/03 ww w : http://www.eipbn.org 1/7/03 ww w : http://www.vlsisymposium.org 2820 E - M a i l: [email protected] D e a d l i n e: 2/3/03 ww w : http://www.p2id.org May 28 - 30, 2003, @ IEEE International June 12 - 15, 2003, # Symposium on VLSI Vacuum Electronics Conference L o c a t i o n: Circuits Lo c a t i o n : Rihga Royal Hotel, Kyoto, Japan April 23 - 25, 2003, T International Sympo- Hotel Lotte, Seoul, Korea C o n t a c t: Gun Sik Park, Co n t a c t : Phyllis Mahoney, Widerkehr & Associates, sium on VLSI Technology, Systems and Seoul National University, Shinlim-dong, 16220 South Frederick Avenue, Suite 312, A p p l i c a t i o n s L o c a t i o n: Ambassador Hotel, Kwana-ku, Seoul, Korea 151-742 T e l: +82 2 Gaithersburg, MD, USA 20877-4020 Tel: +1 301 Hsinchu, Taiwan Co n t a c t : Rachel Huang, ITRI, 195- 880 7749 F a x: +82 2 882 9374 E - M a i l: gun- 527 0900 ext. 103 F a x: +1 301 527 0994 E - 4, Sec 4, Chung Hsing Road, Chutung, Hsinchu, [email protected] D e a d l i n e: 2/8/03 w w w: Ma i l : [email protected] De a d l i n e : 1/7/03 Taiwan R.O.C. Te l : +886 3 591 3478 Fa x : +886 http://ivec2003.snu.ac.kr ww w : http://www.vlsisymposium.org 3 582 0221 E- M a i l : [email protected] De a d l i n e : 11/8/02 ww w : http://vlsitsa.itri.org.tw June 2 - 4, 2003, * IEEE International Intercon- June 23 - 25, 2003, T Device Research Confer- nect Technology Conference L o c a t i o n: Hyatt ence Lo c a t i o n : University of Utah, Salt Lake City, May 11 - 18, 2003, @ World Conference on Regency at the San Francisco Airport, Burlingame, Utah, USA Co n t a c t : Michael Packard, TMS Meeting Photovoltaic Energy Conversion L o c a t i o n: CA, USA Co n t a c t : Wendy Walker, Widerkehr & Services, 184 Thorn Hill Road, Warrendale, PA, Osaka International Convention Center, Osaka, Associates, 16220 South Frederick Avenue, Suite USA 15086 Te l : +1 724 776 9000 x225 Fa x : +1 Japan Co n t a c t : Americo Forestieri, 74 Barberry Dri- 312, Gaithersburg, MD, USA 20877-4020 Te l : +1 724 776 3770 E- M a i l : [email protected] De a d l i n e : ve, Berea, OH, USA 44017 T e l: +1 440 234 301 527 0900 ext. 104 Fa x : +1 301 527 0994 E- 2/21/03 ww w : www.tms.org/Meetings/Special- 1574 F a x: +1 440 234 1574 E - M a i l: moefor- Ma i l : [email protected] De a d l i n e : 1/17/03 ty / D R C / 2 0 0 3 / D R C - 2 0 0 3 - H o m e . h t m l [email protected] D e a d l i n e: 10/31/02 w w w: ww w : http://www.ieee.org/conference/iitc ht t p : / / w w w . w c p e c 3 . o r g June 26 - 28, 2003, T International Confer- June 8 - 12, 2003, @ IEEE TRANSDUCERS - ence on Mixed Design of Integrated Cir- May 12 - 16, 2003, @ IEEE International Con- International Conference on Solid-State cuits and Systems Lo c a t i o n : Hotel Grand, Lodz, ference on Indium Phosphide and Related Sensors, Actuators and Microsystems Lo c a - Poland Co n t a c t : Andrzej Szajfler, Technical Univer- Materials L o c a t i o n: Fess Parker's Doubletree t i o n: Marriott Copley Place, Boston, MA, USA sity of Lodz, AI Politechniki 11 93-590, Lodz, Resort, Santa Barbara, CA, USA C o n t a c t: Conf Contact: G. Benjamin Hocker, Honeywell Technolo- Poland Te l : +48 (42) 631 26 55 Fa x : +48 (42)

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ’Sponsorship/Co-Sponsorship’ and ’Technical Co-Sponsorship’ T = Technical Co-Sponsorship Support # = Cooperation Support 26

636 0327 E- M a i l : [email protected] De a d l i n e : Not August 12 - 14, 2003, T IEEE Conference on September 8 - 13, 2003, T Symposium on Available ww w : http://www.mixdes.org Na n o t e c h n o l o g y Lo c a t i o n : Moscone Convention Microelectronics Technology & Devices Lo c a - Center, San Francisco, CA, USA C o n t a c t: ti o n : TBD, Sao Paulo City, Brazil Co n t a c t : Jacobus June 29 - July 2, 2003, * IEEE University/Govern- Chennupati Jagadish, Australian National Swart, State University of Campinas, PO Box 6061, ment/Industry Microelectronics Symposium University, Department of Electronic Materi- R.Pandia Calogeras, 90 13 083-970 Campinas-SP, L o c a t i o n: Boise State University, Boise, ID, USA als Engineering, Canberra, ACT 0200, Aus- Brazil Te l : +55 19 3788 7282 Fa x : +55 19 3788 C o n t a c t: Stephen Parke, Boise State University, tralia Tel: +61 2 6125 0363 Fax: +61 2 6125 4873 E - M a i l: [email protected] D e a d l i n e: 1910 University Drive, Boise, ID, USA 83725 Te l : 0511 E - M a i l: [email protected] D e a d l i n e: Not Available ww w : Not Available +1 208 426 3842 F a x: +1 208 426 4800 E - 3/28/03 www: http://ieeenano2003.arc.nasa.gov Ma i l : [email protected] De a d l i n e : 2/21/03 September 8 - 12, 2003, T International Crimean ww w : http://coen.boisestate.edu/ugim03 August 18 - 22, 2003, T International Confer- Microwave Conference "Microwave & ence on Noise in Physical Systems and 1/F Telecommunication Technology" Lo c a t i o n : Sev- July 1 - 4, 2003, T Siberian Russian Work- Fluctuations L o c a t i o n: Czech Noise Research astopol State Technical University, Sevastopol, shop and Tutorial on Electron Devices and Laboratory, Prague, Czech Republic Co n t a c t : Josef Ukraine Co n t a c t : Pavel Yermolov, P.O. Box 240, M a t e r i a l s L o c a t i o n: NSB Convention Center, Sikula, Czech Noise Research Lab, Brno University Sevastopol, Crimea, Ukraine 99057 T e l: +380 Novosibirsk, Russia Co n t a c t : Vladimir Kolchuzhin, of Technology, Technicka 8, Czech Republic 616 692 424 287 F a x: +38 0692 555768 E - M a i l: Karl Marx prospect 20, Novosibirsk, Russia 00 BRNO Te l : +420 5 4114 3328 Fa x : +420 5 [email protected] D e a d l i n e: 5/11/03 w w w: 630092 T e l: +7 3832 460877 F a x: +7 3832 4114 3398 E- M a i l : [email protected] De a d l i n e : ht t p : / / i e e e . o r b i t a . r u / a p s / c r i m 0 3 e . h t m 460209 E- M a i l : [email protected] De a d l i n e : Not Available ww w : http://www.cnrl.cz/ICNF 3/15/03 ww w : http://ieee.nsk.su/edm September 14 - 16, 2003, @ Bi p o l a r / B i C M O S August 25 - 27, 2003, * IEEE International Circuits and Technology Meeting L o c a t i o n: July 3 - 5, 2003, T IEEE Conference on Elec- Symposium on Compound Semiconductors Centre De Congres Pierre Baudis, Toulouse, France tron Devices and Solid State Circuits Lo c a - Lo c a t i o n : University of California San Diego, La Jol- C o n t a c t: Janice Jopke, CCS Associates, 6611 ti o n : New World Renaissance Hotel, Hong Kong, la, CA, USA Co n t a c t : Conf Mgt Group LEOS, IEEE, Countryside Drive, Eden Prairie, MN, USA 55346 China Co n t a c t : Hei Wong, City University, 83 Tat 445 Hoes Lane, Piscataway, NJ, USA 08854 Te l : Te l : +1 952 934 5082 Fa x : +1 952 934 6741 E- Chee Avenue, Kowloon, Hong Kong T e l: +852 +1 732 562 3899 F a x: +1 732 562 8434 E - M a i l: [email protected] D e a d l i n e: 3/7/03 w w w: 2788 7722 F a x: +852 2788 7791 E - M a i l: M a i l: [email protected] D e a d l i n e: Not ht t p : / / w w w . i e e e - b c t m . o r g [email protected] De a d l i n e : 2/28/03 ww w : Available ww w : http://www.i-leos.org ht t p : / / w w w . e e . u s t . h k / i e e e _ e d s / e d s s c . h t m September 16 - 19, 2003, T International Confer- August 25 - 27, 2003, T International Sympo- ence on Solid-State Devices and Materials Lo c a - July 7 - 11, 2003, @ International Vacuum sium on Low-Power Electronics and Design t i o n: The Keio Plaza Inter-Continental-Keio Plaza Microelectronics Conference L o c a t i o n: Senri Lo c a t i o n : JW Marriott Hotel, Soeul, Korea Co n t a c t : Hotel, Tokyo, Japan C o n t a c t: Noriko Sugimoto, Life Science Center, Toyonaka, Osaka, Japan Co n - Rajiv Joshi, IBM Research Division, Yorktown Japan T e l: Not Available F a x: Not Available E - ta c t : Mikio Takai, Osaka University, Machikaney- Heights,, NY, USA 10598 Te l : Not Available Fa x : M a i l: [email protected] D e a d l i n e: 5/8/03 ma 1-3, Toyonaka, Osaka, Japan 506-8531 Te l : Not Available E- M a i l : [email protected] De a d l i n e : ww w : http://www.intergroup.co.jp/ssdm/ +81 6 6850 6693 Fa x : +81 6 6850 6662 E- M a i l : 2/2/03 ww w : http://poppy.snu.ac.kr/~islped/ [email protected] D e a d l i n e: 3/15/03 September 16 - 18, 2003, T European Solid- ww w : http://ivmc2003.rcem.osaka-u.ac.jp September 3 - 5, 2003, @ IEEE International State Device Research Conference Lo c a t i o n : Conference on Simulation of Semiconduc- Estoril Congress Centre, Estoril, Portugal Co n t a c t : July 7 - 11, 2003, T IEEE International Sympo- tor Processes and Devices L o c a t i o n: Boston Ana Marcelino, Chipidea Microelectronics, sium on the Physical and Failure Analysis Marriott Cambridge, Cambridge, MA, USA Co n - Taguspark, Edificio Inovacao IV, sala 733, Porto of Integrated Circuits L o c a t i o n: Shangri-la ta c t : Fely Barrera, Stanford University, CISX 332, Salvo, Portugal 2780-920 T e l: +351 21 033 63 Hotel, Singapore, Singapore C o n t a c t: Jasmine Stanford, CA, USA 94305-4075 Te l : +1 650 723 00 F a x: +351 21 033 63 96 E-Mail: Leong, Kent Ridge Post Office, PO Box 1129,Sin- 1349 F a x: +1 650 725 7731 E - M a i l: [email protected] D e a d l i n e: 4/5/03 gapore 911105 T e l: +65 743 2523 F a x: +65 [email protected] D e a d l i n e: w w w: ht t p : / / w w w . c h i p i d e a . c o m / e s s d e r c 2 0 0 3 746 1095 E - M a i l: [email protected] D e a d l i n e: 2/28/03 ww w : http://www-tcad.stanford.edu/sis- 1/15/03 ww w : http://www.ieee.org/ipfa pa d 0 3 / c f p . h t m l September 21 - 25, 2003, T Electrical Over- stress/Electrostatic Discharge Symposium July 16 - 18, 2003, T IEEE International Meet- September 6 - 7, 2003, T European Gallium Lo c a t i o n : The Riviera Hotel, Las Vegas, NV, USA ing for Future of Electron Devices, Kansai Arsenide and Other Semiconductor Appli- C o n t a c t: Lisa Pimpinella, ESD Association, 7900 Lo c a t i o n : Convention Center, Osaka University, Sui- cations Symposium Lo c a t i o n : ICM Convention Turin Road Building 3, Suite 2, Rome, NY, USA ta Campus, Osaka, Japan Co n t a c t : Hiroshi Noza- Centre, Munich, Germany C o n t a c t: Ing. 03440-2069 Te l : +1 315 339 6937 Fa x : +1 315 wa, Kyoto University, Graduate School of Energy Schiechtweg, Fraunhofer-Institute IAF, Tullaster 72 339 6793 E - M a i l: [email protected] D e a d l i n e: Science, 208, # 2 Building, Kyoto, Japan 606- 79108, Freiburg, Germany T e l: +49 761 5159 1/13/03 ww w : http://www.esda.org 8501 Te l : +81 75 753 4725 Fa x : +81 75 753 534 F a x: +49 761 5759 565 E - M a i l: 4725 E- M a i l : [email protected] [email protected] D e a d l i n e: September 21 - 24, 2003, T IEEE Custom Inte- De a d l i n e : Not Available ww w : Not Available 7/12/03 ww w : http://www.eumw2003.com grated Circuits Conference Lo c a t i o n : Double-

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tree Hotel, San Jose, CA, USA C o n t a c t: Melissa October 6 - 10, 2003, T European Symposium USA C o n t a c t: Kathy MacLennan, MP Associates, Widerkehr, Widerkehr & Associates, 16220 on Reliability of Electron Devices, Failure Inc, 5305 Spine Road Suite A, Boulder, CO, USA South Frederick Avenue, Suite 312, Gaithersburg, Physics and Analysis Lo c a t i o n : Palatium-Arca- 80301 Te l : +1 303 530 4562 Fa x : +1 303 5304- MD, USA 20877-4020 T e l: +1 301 527 0900 chon, Arcachon, France Co n t a c t : Nathalie Labat, 4334 E- M a i l : [email protected] De a d l i n e : ext. 101 F a x: +1 301 527 0994 E - M a i l: melis- Universite Bordeaux 1 - Laboratoire IXL, 351, cours 4/16/03 ww w : http://www.iccad.com [email protected] D e a d l i n e: 4/2/03 w w w: de la Liberation, Talence, France 33405 Te l : +33 ht t p : / / w w w . h i s . c o m / ~ c i c c 556 84 6551 F a x: +33 556 37 1545 E - M a i l: November 9, 2003, T Gallium Arsenide Relia- [email protected] De a d l i n e : 3/31/03 ww w : bility Workshop Lo c a t i o n : US Grant Hotel, San September 23 - 25, 2003, T International Sem- ht t p : / / w w w . e s r e f . o r g Diego, CA, USA Co n t a c t : Anthony Immorlica, BAE inar/Workshop on Direct and Inverse Systems, 65 Spit Brook Road, Nashua, NH, USA Problems of Electromagnetic and Acoustic October 12 - 15, 2003, T IEEE Conference on 03061-0868 Te l : +1 603 885 1100 Fa x : +1 603 Wave Theory Lo c a t i o n : Institute of Applied Prob- Intelligent Transportation Systems Lo c a t i o n : 885 6061 E - M a i l: anthony.a.immorlica@baesys- lems of Mechanics & Math, Lviv, Ukraine Co n t a c t : Regal International East Asia Hotel, Shanghai, Chi- tems.com D e a d l i n e: Not Available w w w: Not Nikolai Voitovich, Institute of Applied Problems of na Co n t a c t : Fei Wang, University of Arizona, PO Av a i l a b l e Mech & Math of NASU, Naukova St. 3"B", Lviv, Box 210020, Tucson, AZ, USA 85721 T e l: +1 Ukraine 79601 T e l: +380 322 651944 F a x: 520 621 6558 Fa x : +1 520 621 6555 E- M a i l : November 17 - 18, 2003, T I n t e r n a t i o n a l +380 322 637088 E - M a i l: [email protected] [email protected] De a d l i n e : 3/1/03 ww w : Symposium on Electron Devices for De a d l i n e : 7/1/03 ww w : ht t p : / / w w w . e w h . i e e e . o r g / t c / i t s / c o n f . h t m l Microwave and Optoelectronic Applica- t i o n s L o c a t i o n: University of Central Florida, September 24 - 26, 2003, T I n t e r n a t i o n a l October 2003, @ International Symposium Orlando, FL, USA Contact: Juin Liou, ECE Depart- Conference on Advanced Thermal Pro- on Semiconductor Manufacturing Lo c a t i o n : ment, University of Central Florida, Orlando, Flori - cessing of Semiconductors L o c a t i o n: The USA Co n t a c t : Audrey Osborn, Martiz, 1777 Botel- da, USA 32816-2450 T e l: +1 407 823 5339 Westin Francis Marion Hotel, Charleston, NC, ho Drive, Walnut Creek, CA, USA 94596 Te l : +1 Fax: +1 407 407 823 5835 E-Mail: liou@pega - USA C o n t a c t: Conference RTP, 4830 Langdale 925 2875388 F a x: +1 925 287 5398 E - M a i l: sus.cc.ucf.edu D e a d l i n e: 9 /8/03 w w w: Way, Colorado Springs, CO, USA 80906 T e l: [email protected] D e a d l i n e: Not Avail- http://www.edmo-symposium.org +1 719 579 8050 F a x: +1 719 579 8082 E - able ww w : Not Available M a i l : [email protected] D e a d l i n e : December 3 - 6, 2003, * IEEE Semiconductor 5/31/03 w w w: http://www.rtp-conference.org October 20 - 23, 2003, * IEEE International Interface Specialists Conference L o c a t i o n: Integrated Reliability Workshop L o c a t i o n: Marriott Key Bridge, Arlington, VA, USA Co n t a c t : September 28 - October 2, 2003, * In t e r n a - Stanford Sierra Camp, Lake Tahoe, CA, USA Co n - Bob Wallace, University of North Texas, Materials tional Semiconductor Conference L o c a t i o n: ta c t : Mike Dion, Te l : Not Available Fa x : Not Avail- Science Department, P.O. Box 305310, Denton, Sinaia Hotel, Sinaia, Prahova, Romania C o n t a c t: able E - M a i l: [email protected] D e a d l i n e: Not TX, USA 76203-5310 Te l : +1 940 369 7834 Fa x : Dan Dascalu, IMT-Bucharest, PO Box 38-160, Available ww w : Not Available +1 940 565 4824 E - M a i l: [email protected] Bucharest, Romania 72225 T e l: +40 1 490 85 De a d l i n e : Not Available ww w : Not Available 83 F a x : +40 1 490 82 38 E - M a i l: October 21 - 24, 2003, T IEEE International [email protected] D e a d l i n e: 4/1 6/03 w w w: Conference on Sensors Lo c a t i o n : Canada Sher- December 7 - 10, 2003, * IEEE International h t t p : / / w w w . i m t . r o / C A S / aton Centre Hotel, Toronto, Canada Co n t a c t : Mark Electron Devices Meeting Lo c a t i o n : Washing- Goldfarb, Palisades CMS, 411 Lafayette Street, ton Hilton & Towers Hotel, Washington, DC, USA September 29 - October 2, 2003, * IEEE Inter- Suite 201, New York, NY, USA 10003 Tel: +1 Co n t a c t : Phyllis Mahoney, Widerkehr & Associates, national SOI Conference L o c a t i o n: Newport 212 460 8090 Fa x : +1 212 460 5460 E- M a i l : 16220 South Frederick Avenue, Suite 312, Beach Marriott Hotel & Tennis Club, Newport Beach, [email protected] D e a d l i n e: 4/14/03 Gaithersburg, MD, USA 20877-4020 Te l : +1 301 CA, USA Co n t a c t : Bobbi Armbruster, BACM, 520 ww w : http://www.ewh.ieee.org/tc/sensors 527 0900 ext. 103 F a x: +1 301 527 0994 E - Washington Blvd. Suite 350, Marina Del Rey, CA, Ma i l : [email protected] De a d l i n e : Not Avail- USA 90292 Te l : +1 310 305 7885 Fa x : +1 310 November 9 - 12, 2003, * IEEE Gallium able ww w : http://www.ieee.org/conference/iedm 305 1038 E - M a i l: [email protected] D e a d l i n e: Arsenide Integrated Circuits Symposium 5/2/03 ww w : http://www.soiconference.org L o c a t i o n: U.S. Grant Hotel, San Diego, CA, USA December 15 - 20, 2003, T International Contact: William Peatman, 141 Mt. Bethel Workshop on the Physics of Semiconductor October 1, 2003, T Workshop on Compact Road, Warren, NJ, USA 07059 T e l: +1 908 De v i c e s L o c a t i o n: Indian Institute of Technology Modeling for RF/Microwave Applications 668 5842 Fa x : +1 908 412 5989 E- M a i l : wpeat- Madras, Chennai, India C o n t a c t: S. Agarwai, L o c a t i o n: Centre de Congres Pierre Baudis, [email protected] D e a d l i n e: 5/5/03 w w w: IWPSD Secretary, Dept of Electrical Engineering, Toulouse, France C o n t a c t: Slobodan Mijalkovic, ht t p : / / w w w . g a a s i c . o r g IIT Madras, Chennai, India 600 036 T e l: +91 Delft University of Technology, DIMES, Delft, The 44 2578383/2578362 F a x: +91 44 Netherlands Te l : Not Available Fa x : Not Available November 9 - 13, 2003, # IEEE International 2570545/2578383 E- M a i l : [email protected] E-Mail: [email protected] D e a d l i n e: Not Conference on Computer Aided Design D e a d l i n e: Not Available w w w: http:// Available ww w : http://ectm.et.tudelft.nl/cmrf03 Lo c a t i o n : San Jose Doubletree Hotel, San Jose, CA, ww w . i w p s d . n e t

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ED I T O R - I N - C H I E F Ninoslav D. Stojadinovic Faculty of Electronic Engineering University of Nis Beogradska 14, 18000 Nis Yugoslavia Tel: +381 18 529 326 Fax: +381 18 46 180 E-Mail: [email protected]

ED I T O R S

REGIONS 1-6, 7 & 9 REGION 8 REGION 10 Eastern, Northeastern & Southeastern Eastern Europe & The Former Soviet Union Australia, New Zealand & South Asia USA (Regions 1, 2 & 3) Alexander V. Gridchin Wee Kiong Choi Murty S. Polavarapu Novosibirsk State Technical University Dept. of Electrical Engineering Micron Technology 20 Karl Marx Prospect National University of Singapore Mail Stop 314 Novosibirsk, 6300092 10 Kent Ridge Crescent 9600 Godwin Drive Russia Singapore 119260 Manassas, VA 20110, USA Tel: +7 383 246 0877 Tel: +65 874 6473 Tel: +1 703 396 2046 Fax: +7 383 246 0209 Fax: +65 779 1103 Fax: +1 703 396 1700 E-mail: [email protected] E-Mail: [email protected] E-Mail: [email protected] Scandinavia & Central Europe Northeast Asia Central USA & Canada (Regions 4 & 7) Andrzej Napieralski Hisayo Sasaki Momose Arokia Nathan Dept. of Microelectronics & Computer Science Microelectronics Engineering Laboratory DALSA/NSERC Industrial Research Chair Technical University of Lodz Toshiba Corporation Electrical & Computer Engineering Al. Politechniki 11, 93-590 Lodz 8, Shin-Sugita-cho, Isogo-ku University of Waterloo Poland Yokohama, 235-8522 Japan Waterloo, Ontario N2L 3GI Tel: +48 (42) 631 26 45 Tel: +81 45 770 3628 Canada Fax: +48 (42) 636 03 27 Fax: +81 45 770 3575 Tel: +1 519 888 4803 E-Mail: [email protected] E-Mail: [email protected] Fax: +1 519 746 6321 E-Mail: [email protected] UK, Middle East & Africa East Asia Gady Golan Hei Wong Southwestern & Western USA Center for Technical Education and City University of Hong Kong (Regions 5 & 6) The Open University Dept. of Electronic Engineering Sunit Tyagi PO Box 39328 83 Tat Chee Avenue Intel 16 Klauzner St. Kowloon, Hong Kong M/S RA1 - 204 Aviv 61392, Israel Tel: +852 2788 7722 5200 NE Elam Young Parkway Tel: +972 54 526 122 Fax: +852 2788 7791 Hillsboro, OR 97124-6497, USA Fax: +972 3 646 5465 E-Mail: [email protected] Tel: +1 503 613 6052 E-Mail: [email protected] Fax: +1 503 613 6052 E-Mail: [email protected] Western Europe Christian Zardini Latin America (Region 9) Laboratoire IXL Adelmo Ortiz-Conde Universite Bordeaux I Universidad Simon Bolivar 351 Cours de la Liberation Apdo. 89000 33405 Talence Caracas 1080-A France Venezuela Tel: +33 5 56 84 65 46 Tel: +58 212 906 4025 Fax: +33 5 56 37 15 45 Fax: +58 212 906 4010 E-Mail: [email protected] E-Mail: [email protected]