FFSATM 130nm series FFSATM 130nm series

Toshiba Custom LSI Solution

To ensure competitiveness in the marketplace, more sophisticated, more technology-intensive and higher-value-added products need to be created using a process of technological innovation. Toshiba’s custom SoC solutions will give you an edge beyond your expectations. You can select a variety of solutions and services empowered by our experience and assets, to develop ASSPs for industrial, telecommunication, consumer, mobile, and amusement applications to support more value-added product development while reducing your development workload. Toshiba’s ASIC (Application Specific IC) and FFSA™ (Fit Fast Structured Array) platforms help to deliver efficient solutions for custom SoC development to meet your business environment and requirements.

Data compression

Security Platform

High Speed SerDes

Storage Design

Design Consulting

Easy PrototypingTM FFSATM Custom SoC ASIC

Metal Configurable Technology Subsystem

Package/PCB Design High Performance Technology

Low Power

Toshiba Custom LSI Solution

ー 1 ー FFSATM 130nm series

FFSA™ (Fit Fast Structured Array)

FFSA™ devices use a silicon based master slice which is common to all customers in combination with upper metal layers which are reserved for customization. By customizing only a few masks FFSA™ offers much lower NRE costs than individual ASIC development. It also enables significant reductions in development costs and provides samples and mass-production in a shorter period of time than for conventional ASIC’s. Additionally, FFSA™ enables higher performance and lower power consumption than FPGA (Field Programmable Gate Array) using ASIC design methodology and its library. FFSA™ is suitable for customers who are employing costly FPGAs to reduce initial investment, and for those who are aiming to differentiate their own products by customized SoCs. Customers spending a significant amount of NRE on ASIC development to obtain performance and lower power consumption which cannot be achieved with FPGAs will also benefit from an FFSA™ solution.

Short time to market Low initial investment High performance (vs. FPGA) Low power (vs. FPGA)

FFSATM SRAM FPGA 40 nm 560 MHz max speed 5X higher FFSATM 14.3 W power

28 nm 1 GHz Power[W/MHz] FFSATM 120 MHz efficiency FPGA 28 nm 400 MHz 5.3 W 240 MHz TM FPGA 700 MHz FPGA 28nm FFSATM 40nm FFSA + 20 nm Performance & ※ power depend on design

ROI Model ASIC FFSATM Cost FPGA High performance Low power ASIC Chip size optimization

Custom metal layers Pre-designed masterslice Memory macro Customer logic ・ ・ Multiprotocol transceiver Configuration of ・ Qty ・ SerDes, DRAM PHY TM masterslice ・ FPGA FFSA Biz Window ASIC Biz Window Multifunction I/O ・ FFSATM features

Individual Product Configuration With Only Four Metal Layers Random Logic Integrated CPU Metal-Configurable Standard Dual-Core Arm® Cortex®-A53 Cell Logic Blocks (CLB) max. 1000 MHz (1200 MHz)

SRAM H/S Transceiver Metal-Configurable 9 kBit Multi-Protocol H/S Transceiver Dual-Port SRAM Blocks (M9K) supporting up to 28 Gbps/Lane

Mixed-Signal IP H/S & Multi-Purpose I/O PLL, DLL, Temperature Sensor, Metal-Configurable I/O Pad Cells in E-Fuse OTP Memory 16 Individual I/O Banks Common Base-Wafers (Masters) Shared Among Several Products High Performance Low NRE Standard Cell Library and Individual Product Requires ASIC-like Design Methodology Low Power Dissipation Short Design Time Only Four Metal-Layers Small Die Size Short Lead Time FFSATM Structure

ー 2 ー Feature market. equipment industrial growing the for FFSA™ option making a suitable portfolio process 65nm and 40nm, 28nm, existing joins the series process 130nm slice. The master in the embedded IO of IP and specifications FFSA™ the layers to isable set metal customizing By to ASIC. equivalent nearly consumption low power and FFSA™ performance high to isable achieve acell library, and methodology development using ASIC By FFSA™ lineup 2013 Fab : GLOBALFOUNDRIES nm 65 2014 2015 Fab : GLOBALFOUNDRIES nm 40 2016 FFSA ー3 ™ lineup 2017 Fab : TSMC nm 28 2018 New! 2019 Corporation Semiconductor Fab : nm 130 DRAM speed : 1066 Mbps :1066 speed DRAM Gbps :6.5 speed Transcelver Mbps :1600 speed DRAM Gbps :12.5 speed Transcelver DRAM speed : 2666 Mbps :2666 speed DRAM Gbps :28 speed Transcelver Japan 2020 FFS CY A T M

130nm

series FFSATM 130nm series

Process series specification Attribute Specification IP Specification 1 3.3 V / 1.5 V (/ 2.5 V※ ) 1 port read/write SRAM Power supply voltage 1 3.3 V single power supply (embedded LDO)( / 2.5 V※ ) 1 port read/1 port write SRAM SRAM 2 2 ports read/write SRAM Junction temperature (Tj)※ -40 to +125 ℃ ℃ Package Type QFP, BGA 1port ROM ROM 3 Logic Gates※ 250 to 912 K gates Output frequency : 9.375 to 600MHz Memory size 32 to 664 kbits PLL (Optional SSCG support) ： 4 5 3.3V single power supply version only※ ※ LDO

Macro cell

Reference CLK 6 to 200 MHz 1 port read/write SRAM PLL※6 Output frequency 9.375 to 600 MHz SRAM Type 1 port read/1 port write SRAM 2 ports read/write SRAM SRAM 7 SRAM Macro Size※ 8kbit

7 2b x 4096w 4b x 2048w 8b x 1024w bit/word SRAM Macro ※ 、 、 、 （ ） 16b x 512w

Parameter Symbol Condition min max Unit IO Power supply voltage VDDIO 3.0 3.6 V High-level input voltage VIH 2.0 VDDIO+0.3 V Low-level input voltage VIL -0.3 0.8 V Schmitt trigger hysteresis voltage VH 0.2 1.4 V IOH = -100 μA VDDIO-0.2 V I/O ー IOH = -2 mA (GPIO, Oscillator cell) High-level output voltage VOH IOH = -4 mA ・GPIO 3.3V mode 2.4 V IOH = -8 mA ー IOH = -12 mA IOL = 100 μA 0.2 V ー IOL = 2 mA Low-level output voltage VOL IOL = 4 mA 0.4 V IOL = 8 mA ー IOL = 12mA

Parameter Symbol Condition min max Unit IO Power supply voltage VDDIO 2.3 2.7 V High-level input voltage VIH 1.7 VDDIO+0.3 V Low-level input voltage VIL -0.3 0.7 V Schmitt trigger hysteresis voltage VH 0.2 1.0 V IOH = -100 μA 2.1 V ー I/O IOH = -1 mA (GPIO, Oscillator cell) High-level output voltage VOH IOH = -2 mA 2.0 V ・GPIO 2.5V mode IOH = -4 mA ー IOH = -6 mA IOL = 100 μA 0.2 V ー IOL = 1 mA Low-level output voltage VOL IOL = 2 mA 0.4 V IOL = 4 mA ー IOL = 6 mA

・Oscillator cell Recommended Oscillator or Ceramic Resonator Frequency Range 10 to 30 MHz

1) GPIO 2.5V mode needs to supply 2.5 V voltage externally. 2) Ambient temperature depends on usage conditions. ※ ※ 3) Regarding the number of usable gates, please consider the value as a guide as it varies depending on the customer’s circuit. ※ 4) 3.3V single-supply needs some restriction of core power supply and pin assignments of external capacitor to mount LDO. ※ 5) External output capacitor is required. ※ 6) Optional : Support spread spectrum clock generator (SSCG). 7) SRAM is provided combining above macro module to meet required bit / word configuration. ※ ※ External output capacitor is required. Please contact our sales for FFSA™ 65nm-28 series inquires. ● ●

ー 4 ー FFSATM 130nm series

Package

Package requirements vary with each application system in which ASICs are incorporated. To satisfy all application needs, Toshiba offers a broad range of packaging options, based on small-form-factor and lightweight, low-profile, high-pin-count, high-speed and thermal dissipation technologies. FFSATM 130nm series offers following package’s lineup.

Package lineup Type Pin Lead/Ball pitch Body size

QFP 48 to 216 0.4, 0.5 mm 7x7 to 24x24 mm BGA 40 to 580 0.4 to 1.0 mm 8x8 to 35x35 mm BGA pin number and body size are reference values. Applicable packages change depending on the master, the number of signals, etc. ※ It is possible to make another packages suggestion to meet your specifications and business conditions. Please contact our sales for your package selection. ※

Toshiba Custom SoC website

For further information about this product, please visit: https://toshiba.semicon-storage.com/ap-en/product/custom-soc.html

TM FFSA™ and Easy Prototyping are trademarks of Toshiba Electronic Devices and Storage Corporation. Arm and Cortex are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere. All other company names, product names, and service names may be trademarks of their respective companies.

ー 5 ー FFSATM 130nm series

RESTRICTIONS ON PRODUCT USE

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Toshiba Electronic Devices & Storage Corporation

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