N-Type Silicon Photoelectrochemistry in Methanol: Design of a 10.1

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N-Type Silicon Photoelectrochemistry in Methanol: Design of a 10.1 Proc. NatL Acad. Sci. USA Vol. 80, pp. 1152-1156, February 1983 Chemistry n-Type silicon photoelectrochemistry in methanol: Design of a 10.1% efficient semiconductor/liquid junction solar cell (solar energy conversion/nonaqueous silicon photoanodes) CHRIS M. GRONET*, NATHAN S. LEWIS*t, GEORGE COGAN0, AND JAMES GIBBONS: *Department of Chemistry, Stanford University, Stanford, California 94305; and *SERA Solar Corporation, Santa Clara, California 95050 Communicated by James P. Coilman, November 22, 1982 ABSTRACT n-Type Si electrodes in MeOH solvent with 0.2 la. The presence of a depletion layer in the semiconductor re- M (1-hydroxyethyl)ferrocene, 0.5 mM (1-hydroxyethyl)ferricenium, sults in the separation of photogenerated electron-hole pairs, and 1.0 M LiClO4 exhibit air mass 2 conversion efficiencies of with the electrons being driven into the bulk and the holes mi- 10.1% for optical energy into electricity. We observe open-circuit grating to the solid/liquid interface. These holes are then con- voltages of0.53 V and short-circuit quantum efficiencies for elec- sumed by a solution reductant, resulting in a flow of current. tron flow ofnearly unity. The fill factor ofthe cell does not decline The voltage difference between the energy at the edge of the significantly with increases in light intensity, indicating substantial semiconductor conduction band and the redox potential of the reduction in efficiency losses in MeOH solvent compared to pre- solution determines the barrier height of the device. Fig. lb vious nonaqueous n-Si systems. Matte etch texturing ofthe Si sur- depicts a possible situation for the interface energetics when face decreases surface reflectivity and increases photocurrent by (9). Here, the fill 50% compared to shiny, polished Si samples. The high values of recombination sites are present at the surface the open-circuit voltage observed are consistent with the presence factor and short-circuit quantum yield may be lower than op- of a thin oxide layer, as in a Schottky meta-insulator-semicon- timal due to the presence of these states at the interface. Thus, ductor device, which yields decreased surface recombination and one method of improving the efficiency of a given semicon- increased values ofopen-circuit voltage and short-circuit current. ductor/liquid junction may be to treat chemically the surface The n-Si system was shown to provide sustained photocurrent at in order to eliminate the deleterious recombination sites. air mass 2 levels (20 mA/cm2) for charge through the interface Another commonly appreciated difficulty in surface barrier of >2,000 C/cm2. The n-Si/MeOH system represents a liquid devices such as Schottky cells and solid/liquid junction cells is junction cell that has exceeded the 10% barrier for conversion of the large value of dark current arising from thermionic emission optical energy into electricity. of carriers at the interface (10, 11). This large dark current leads to values of the open-circuit voltage (VO) at typical solar inten- Nonaqueous solvent systems have been shown to be useful in sities which differ substantially from the barrier height of these suppressingelectrode corrosion orpassivationprocesses at semi- types of devices. For example, for an ideal Si/Au Schottky bar- conductor photoanodes (1-4). However, the efficiencies of rier with a barrier height of 0.8 V, it can be shown thatVO, under most systems under solar irradiation conditions generally have AM1 conditions will be only 0.3 V (12). Clearly, methods of rais- been modest (<6%). This has been ascribed to the presence of ing the values of V,,, in such systems would be highly desirable. states at the liquid/solid interface that act as recombination cen- A technique used in Schottky systems is to introduce a thin in- ters and can seriously limit the efficiency of such systems (4-7). terfacial layer of oxide, creating a metal-insulator-semicon- Thus, although the use ofnonaqueous solvents may improve the ductor (MIS) type cell. This procedure can drastically reduce cell stability, such systems may not be useful unless they can be the dark bucking current (10, 12-16) and thus increase the VOX designed to produce acceptable conversion efficiencies under and efficiency of these devices. solar irradiation conditions. We have applied these concepts to the n-Si/liquid electrolyte In particular, n-type Si cells in ethanol are estimated to yield system. The silicon surface in our studies has a native oxide after about 1% efficiency for conversion of sunlight into electricity etching and exposure to atmosphere (17). The rectifying prop- (5). Because the bulk properties of the materials studied are es- erties ofthis oxide shouldbe sensitive to the etchingprocedure, sentially identical to those used in high-efficiency solid-state so- liquid solvent, and other such factors. We find that n-Si pho- lar cells, we reasoned that the primary source of inefficiency in toelectrodes in MeOH solvent exhibit the high VOZ values and nonaqueous systems must be at the semiconductor/liquid in- efficiencies characteristic of MIS devices, with no evidence of terface. We therefore attempted to exploit chemical treatments the declining fill factors or the poor quantum yields that have that would be effective in changing the chemical and electronic been observed in previous studies of n-Si junctions in non- nature of these interface states. We describe herein the results aqueous solvents. of such experiments, which have resulted in a 10-fold increase in the conversion efficiency of n-Si electrodes in nonaqueous EXPERIMENTAL solvents. Notably, our cells consistently yield 10.1% efficiency for conversion of light to electricity under air mass 2 (AM2) solar The silicon electrodes were fashioned from polished wafers of conditions-a Si-based liquid junction cell that is in excess of 1.3-1.7 ohm-cm resistivity, phosphorus-doped, (100) oriented, the 10% barrier for conversion of optical energy into electricity. single-crystal material obtained from Monsanto. Typical elec- The interface energetics for an ideal semiconductor/liquid trodes consisted of squares 4.0 mm on each side, which were interface (8) at charge transfer equilibrium are presented in Fig. rubbed on the unpolished side with Ga-In eutectic to form an The publication costs of this article were defrayed in part by page charge Abbreviations: AM, air mass; VOX, open-circuit voltage; SCE, standard payment. This article must therefore be hereby marked "advertise- calomel electrode; MIS, metal-insulator-semiconductor. ment" in accordance with 18 U. S. C. §1734 solely to indicate this fact. t To whom reprint requests should be addressed. 1152 Downloaded by guest on September 30, 2021 Chemistry: Gronet et aL Proc. Natl. Acad. Sci. USA 80 (1983) 1153 t solutions of aqueous KCl. The conductivity of 1.0 M LiCl04 in MeOH solution was measured to be 38 mmho/cm. This con- E a b trasts with that of 0.1 M in which is ap- ' ECB (n-Bu4N)C104 EtOH, 0 ECB proximately an order of magnitude lower. The uncompensated ohmic resistance (=50 ohms) present in our cell design in MeOH E Eredox redox E, has not been eliminated or compensated for instrumentally and Ef--- Jl thus makes our present efficiency measurements conservative co by 10-15%. Also, although the experiments described in this EBG EBG ' EVB manuscript were performed in a three-electrode configuration, EVB we expect that efficiencies actually would be higher in a two- CuI Iu, electrode. device of optimized, cell geometry due to less light a- absorption by the solution. + Light sources were a 5.0-mW polarized He/Ne laser (632.8 nm), an ELH-type tungsten halogen bulb with a ground glass diffuser, or an ENH-type bulb with a ground glass diffuser (for FIG. 1. (a) Interfacial energetics at equilibrium for an ideal n-type stability runs). Intensity calibration was performed routinely with semiconductor/liquid junction. The electric field in the semiconductor promotes spatial separation of photogenerated holes and electrons, a Solarex secondary standard Si cell and was periodically veri- providing for net current flow. (b) Interfacial energetics for a particular fied to be within 10% of the value measured with an Eppley distribution of surface states at an n-type semiconductor/liquid junc- thermopile detector. Laser intensities were measured with a tion. Photogenerated carriers are separated as in a; however, the pres- Newport Research (Fountain Valley, CA)' model 815 photom- ence of intermediate levels can promote recombination. This may lead eter. For equilibrium current/voltage measurements, the laser to loss of photocurrent and photovoltage and may result in inefficient beam was expanded with a 5X beam diffuser and collimator from conversion of light into electricity. Aerotech (Pittsburgh). The light intensity was varied by rotation ohmic contact(15). The electrode was then attached to a coil of of a Hoya polarizer in the path of the polarized laser beam. Cu wire with Ag paint, and the Cu wire was passed through a Spectral response curves were obtained with a computer- glass tube to provide insulation from the solution. The exposed controlled system at SERA Solar Corp. (Santa Clara, CA). This Cu and Ag were then sealed with ordinary epoxy cement to ex- apparatus consisted of a Spex .1670 Minimate monochromator pose only the Si to the electrolyte solution. Shiny electrode sur- with a range of 400 to 1,100 nm and provided an average in- faces were obtained by etching in concentrated (48%) aqueous tensity of 1 mW/cm2. The beam was chopped at 13 Hz and was HF for 20 sec followed by a MeOH rinse. Matte electrode sur- referenced to a Si detector (United Detector Technologies, Cul- faces were prepared by exposing unmounted Si to solar cell ver City, CA). Data acquisition and plotting were performed etchant type 200 (Transene, Rowley, MA) for 60 min at 80'C and with a Hewlett-Packard 9826 computer.
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