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Saturation velocity
Velocity Saturation in Few-Layer Mos2 Transistor Gianluca Fiori,1 Bartholomaus€ N
Short Channel Effects in Graphene
The Dependence of Saturation Velocity on Temperature, Inversion Charge and Electric Field in a Nanoscale MOSFET
Observation of Electron Velocity Overshoot in Sub- 100-Nm-Channelmosfet’S in Silicon
Mobility and Saturation Velocity in Graphene on Silicon Dioxide
The Evolution of Theory on Drain Current Saturation Mechanism of Mosfets from the Early Days to the Present Day
High-Field Transport and Velocity Saturation in Synthetic Monolayer Mos2 † † † † ‡ § Kirby K
MOSFET Device Physics and Operation
Lecture 4, Sept. 6, 2007
High-Velocity Saturation in Graphene Encapsulated by Hexagonal Boron
MOSFET-Like Carbon Nanotube Field Effect Transistor Model
Scattering-Limited and Ballistic Transport in a Nano-CMOS Circuit
High-Field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors
Computational Analysis of Ballistic Saturation Velocity in Low-Dimensional Nano- MOSFET
Mobility and Saturation Velocity in Graphene on Silicon Dioxide
A Model of the Short-Channel, Metal-Oxide-Semiconductor Field-Effect Transistor for Pragmatic Mixed-Mode Device/Circuit Simulation
Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon
A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials
Top View
High-Field Transport and Velocity Saturation in Graphene,”
Problems 4070.5HW5
Mobility and Saturation Velocity in Graphene on Sio2
Silicon at High-Field Strengths
Physics and Simulation of Quasi-Ballistic Transport In
Chapter 2 Motion and Recombination of Electrons and Holes
UC San Diego UC San Diego Electronic Theses and Dissertations
Calibration of Drift-Diffusion Model in Quasi-Ballistic Transport Region For
High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation
Modeling the Effect of Velocity Saturation in Nanoscale Mosfet