5Oth SISC ‐ “RUMP Session” Moderator: Bob Wallace UT‐Dallas SISC Program Committee: 1997‐2000; 2009‐2012 SISC Executive Committee: 2001‐2004 Limerick Contest Winner: 1998 December 13, 2019 Bahia Resort and Hotel San Diego, CA, USA © 2019 R.M.Wallace 2 © 2019 R.M.Wallace https://www.ieeesisc.org/past.html#history 3 First… a useful Review! https://www.ieeesisc.org/history/SISC_history_2009.pdf © 2019 R.M.Wallace 4 BTL Transistor Technology Symposium (1952) (Computer History Museum) First detailed disclosure of BTL transistor research results and fabrication for a $25,000 license (~$242,225 in 2019) Symposium was “enabled” by antitrust concerns 5 © 2019 R.M.Wallace From Lojek (2007) SiO2 studied for passivation…(~1958‐61) © 2019 R.M.Wallace 6 MOS – 1959 at BTL “…it served no immediate need in AT&T equipment, the company did not pursue development of a product.” (Laws – Computer History Museum) © 2019 R.M.Wallace 7 Drivers in the early 1960’s Minute Man I ‐ Guidance Minute Man II Total real R&D expenditures by source of funds, 1960‐2000. (1965‐1997) Source: U.S. National Science Foundation, National Patterns of R&D Resources. Minute Man II ‐ Guidance From Lojek (2007) The guidance system contained 2,000 8 © 2019 R.M.Wallace microchips made by Texas Instruments. Drivers in the early 1960’s $B Stein, Congressional Research Service Report RL34645 (2009) Apollo Guidance Computer https://airandspace.si.edu/stories/editorial/apollo‐guidance‐computer‐and‐first‐silicon‐chips https://www.hq.nasa.gov/alsj/ic‐pg3.html Starfish prime Telstar‐1 © 2019 R.M.Wallace 9 Drivers in the early 1960’s O’Niel in Atomic Audit, S. Schwartz, ed. (1998) NNSA © 2019 R.M.Wallace underground 10 Important MOS Conferences in the 1960’s… • IEEE Solid‐State Device Research Conference (SSDRC) –Test device structures, including MOS • Electrochemical Society Meetings • Silicon Interface Specialists Conference (1965) • Sponsored by the IEEE Electron Devices Group • Devoted to Physics and Chemistry of MOS structures • ~70 attendees (by invitation) • Physics of Failure Conference in Electronics • Air Force push starting in 1961 • 1966 conference famous for lively mechanisms discussion… • Leads to the Reliability Symposium… © 2019 R.M.Wallace Source: Basset: “To the Digital Age”, pp.139‐14612 Where it all started…1965 Exciting SISC & Limericks! © 2019 R.M.Wallace 13 Some Notable Organizers –SISC 1965 • Conference Committee • Steven R. Hofstein (Chairman‐Invitations) –RCA –First commerically available MOS Transistors (3N98, 3N99 ‐ 1964) and CMOS (1968) • Robert Norman –Fairchild, GMe (co‐founder) – Circuit designer, First planar integrated circuit team (1960), “Micrologic” Flip‐Flop ICs (1961), Proposed solid state memory, first calculator team • C.T. Sah – Shockley Semi. Lab, Fairchild, U. Illinois‐ pn junctions, MOS diodes, CMOS concept, text book! • Earl Schlegel – Philco‐Ford –Interface strain, IEEE TED Bibliography on MOS (1967) • Ed H. Snow –Fairchild –MOS reliability (“instabilities” ‐ mobile ions, CV measurement, w/ Deal and Grove) on a scientific basis • James E. Thomas –BTL, IBM (Solid State Mgr in CD), GI Sources: Basset: “To the Digital Age” Lojek: “History of Semiconductor Engineering” © 2019 R.M.Wallace SISC 1965 Technical Program 14 Some Notable Attendees –SISC 1965 • Gerald Abowitz – Phillips –Si surface states and orientation • Mohamed M. (John) Atalla –BTL, hp associates, Fairchild, … –First SiO2 MOSFETs (“oxide passivation”) (1958‐60) • Pieter Balk –IBM –MOS chemistry research manager, oxidation rate and orientation, Effect of hydrogen anneals on interface states • C. N. Berglund –BTL –steam‐grown SiO2/Si via CV measurements • Bruce Deal –Fairchild –Oxide growth kinetics, ion‐induced flatband shifts • Robert Donovan –RTI –Electron irradiation and trapping, the elephant! • Alan Fowler ‐ IBM –MOS physics research manager, mobility and orientation • Adolf Goetzberger – BTL –MOS CV (conductance) measurements • Andy S. Grove –Fairchild –Radiation damage model, oxidation • Fredric Heiman –RCA ‐ First commercially available MOS Transistors • Hap Hughes –NRL –Radiation hardening • Ed Nicollian ‐ BTL –MOS CV (conductance) measurements • Paul Rappaport –RCA – Transistors, ICs, Photovoltaics • Karl Zaininger – RCA –MOS Transistor Sources: Basset: “To the Digital Age” Lojek: “History of Semiconductor Engineering” © 2019 R.M.Wallace SISC 1965 Technical Program 15 Institutions Represented– SISC 1965 • Industry • Amelco, Bell Telephone Labs (BTL), Computer Control, Corning Glass, Crystalonics, Fairchild, Ford, General Electric (GE), General Instruments (GI), General Microelectronics (GMe), General Telephone & Electronics, Hitachi, hp, IBM, Motorola, Northrop, Philco, Raytheon, RCA, Sperry, Sprague, Sylvania, Texas Instruments, Westinghouse, • Government • NRL, Army (Fort Monmouth), Air Force (Rome) • Academic • Polytechnic Inst. Brooklyn, Case Inst. Technology, Carnegie Inst. Technology, MIT (Lincoln), Princeton, Research Triangle Inst. Sources: Basset: “To the Digital Age” Lojek: “History of Semiconductor Engineering” © 2019 R.M.Wallace SISC 1965 Technical Program 16 Andy Grove, Bruce Deal, and Ed Snow discuss MOS technology at the Fairchild Palo Alto R&D Laboratory, 1966. © 2019 R.M.Wallace 17 Robert Donovan’s assessment (1966) (Physics of Failure Conference in Electronics‐Columbus) Sah (Fairchild) (Shockley Labs) (RCA) (TI) (IBM) (Sprague) (RCA) © 2019 R.M.Wallacehttps://www.computerhistory.org/revolution/digital‐logic/12/279 18 MOS Papers by year (1967) Bassett, after Schlegel IEEE TED (1967) © 2019 R.M.Wallace 19 Some notable papers in the mid‐late 1960’s • P. Balk, “Effects of hydrogen annealing on silicon surfaces,” presented at the Electrochemical Society Meeting San Fransisco, CA May 9‐13, 1965, Extended Abstracts of Electronics Division, Vol. 14, No. 1, abstract No. 109, pp. 237–240, May 1965 • E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, “Ion Transport Phenomena in Insulating Films,” J. Appl. Phys., 36(5), pp. 1664‐ 1673, May 1965. • A. S. Grove, B. E. Deal, E. H. Snow and C. T. Sah, “Investigation Of Thermally Oxidised Silicon Surfaces Using Metal‐oxide‐ semiconductor Structures,” Solid‐State Electron. 8, pp. 145‐163, Aug. 1965 • P.Balk, P. J. Burkhardt, L. V. Gregor, “Orientation Dependence of Built‐In Surface Charge on Thermally Oxidized Silicon,” Proc. IEEE, pp. 2133‐2134, Dec. 1965 • E. Kooi, “Effects of low temperature heat treatments on the surface properties of oxidized silicon,” Philips Research Reports 20, pp. 578–594, Oct. 1965 • A. G. Resvez, “Taxonomy of Electric Charges in Metal‐Insulator‐Semiconductor Systems,” Proc. IEEE, pp. 1002‐1003 , Jul. 1966 • E. Arnold and G. Abowitz, “Effect Of Surface States on Electron Mobility in Silicon Surface‐inversion Layers,” Appl. Phys. Lett., 9(9), pp. 344‐346, Nov. 1966 • R. P. Donovan, “The Oxide‐Silicon Interface,” Physics of Failure in Electronics Vol.4, Prof. 5th Symposium, Columbus, OH, pp. 199‐ 231, Nov. 1966 • C. N. Berglund, “Surface States at Si‐SiO2 Interfaces, ” IEEE TED, ED‐13, p. 701. 1966 • H. G. Carlson, C. R. Fuller, D. E. Meyer, J. R. Osborne, V. Harrap and G. A. Brown, “Clean Metal Oxide Semiconductor Systems,” Physics of Failure in Electronics Vol.4, Prof. 5th Symposium, Columbus, OH, pp. 265‐291, Nov. 1966 • B. E. Deal, M. Sklar, A. S. Grove, and E. H. Snow, “Characteristics of the Surface‐State Charge of Thermally Oxidized Silicon, J. Electrochem. Soc., pp.266‐274, Mar. 1967 • G. Abowitz, E. Arnold, and J. Ladell, “Symmetry of Interface Charge Distribution in Thermally Oxidized Silicon, Phys. Rev. Lett., 18(14), pp. 543‐546, Apr. 1967 • Y. Miura and Y. Matukura, "Instabilities of MOS Structure,“ Jap. J. Appl. Phys., Vol. 6, p. 582, May 1967. • E. H. Nicollian and A. Goetzberger, “The Si‐SiO2 Interface ‐ Electrical Properties as Determined by the Metal‐Insulator Silicon Conductance Technique,” Bell Sys. Tech. Journal, 66(6), pp. 1055‐1133, Jul 1967. • E. S. Schlegel, “A Bibliography of Metal‐Insulator‐Semiconductor Studies,” IEEE TED, 14(11), pp.728‐749, Nov. 1967 (prepared for the 2nd (1967) SISC!) • A. G. Resvez and K. H.Zaininger, “The Si‐SiO2 Solid‐Solid Interface System,” RCA Review, pp. 22‐76, Mar. 1968 • B. E. Deal, E. L. MacKenna, and P. L. Castro, “Characteristics of Fast Surface States Associated with SiO2‐Si and Si3N4‐SiO2‐Si Structures,” J. Electrochem. Soc., pp. 997‐1005, Jul.1969 © 2019 R.M.Wallace 20 And so the industry develops… From Lojek (2007) © 2019 R.M.Wallace From anysilicon.com (2019) 24 SISC Anniversary Lectures and Program Changes • (1979) 10th SISC –J.L. Moll: “The Outer Limits of Si VLSI” • (1984) Poster Session Introduction • (1989) 20th SISC –R.H. Dennard: “The evolution and scaling of DRAMs” • (1995) Ed Nicollian Best Student Paped Award Introduced • (1999) 30th SISC – “The Great Breakdown Debate!” • (2009) 40th SISC –T.P. Ma: “Gate Dielectrics, Interfaces and the SISC” • (2012) C.T. Sah EDS “Celebrated Member” celebration with SISC • (2016) SISC moves to the west coast © 2019 R.M.Wallace 25 A sample of SISC “recent” notable topics/papers • 1996 –The Catamaran –GC: Bob Stahlbush • SiO2/SiC, “nitride” dielectrics, “ultra‐thin” (~4‐5nm) oxides, Monte Carlo transport, Ab‐ initio modeling, Breakdown, radiation effects, Si/SiGe Heterostructures, trapping, Pb centers, impact of direct tunneling… • “Deuterium annealing for improved hot carrier reliability” • Nicollian Award: Jan De Blauwe (imec) for SILC studies • 1997 –The Mills House (Charleston SC) – GC: Doug Buchanan • SiO2/SiC, JVD nitride, Interface traps, mobile protons in oxides, “alternative