10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page i 1 2 Radio 3 4 Frequency 5 6 7 Transistors 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45Short 46Reg 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page ii 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Short45 Reg46 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page iii 1 2 Radio 3 4 5 6 Frequency 7 8 9 10 Transistors 11 12 13 Principles and Practical Applications 14 15 Second Edition 16 17 18 19 20 21 22 23 Norman Dye 24 25 Helge Granberg 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45Short Boston Oxford Johannesburg Melbourne New Delhi 46Reg 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page iv 1 Newnes is an imprint of Butterworth–Heinemann. 2 3 Copyright © 2001 by Butterworth–Heinemann 4 A member of the Reed Elsevier group 5 6 All rights reserved. 7 8 No part of this publication may be reproduced, stored in a retrieval system, or transmitted in 9 any form or by any means, electronic, mechanical, photocopying, recording, or otherwise, without the prior written permission of the publisher. 10 11 Recognizing the importance of preserving what has been written, Butterworth– 12 Heinemann prints its books on acid-free paper whenever possible. 13 14 Butterworth–Heinemann supports the efforts of American Forests and the Global 15 ReLeaf program in its campaign for the betterment of trees, forests, and our 16 environment. 17 Library of Congress Cataloging-in-Publication Data 18 19 Dye, Norm, 1929– 20 Radio frequency transistors : principles and practical 21 applications / Norman Dye, Helge Granberg.—2nd ed. 22 p. cm. 23 Includes bibliographical references and index. 24 ISBN 0-7506-7281-1 (pbk. : alk. paper) 25 1. Power transistors. 2. Transistor amplifiers. 3. Transistor radio transmitters. 4. Amplifiers, Radio frequency. I. Granberg, 26 Helge, 1932– II. Title. 27 28 TK7871.92 .D96 2000 29 621.384'12—dc21 00-045618 30 31 British Library Cataloguing-in-Publication Data 32 A catalogue record for this book is available from the British Library. 33 The publisher offers special discounts on bulk orders of this book. 34 For information, please contact: 35 Manager of Special Sales 36 Butterworth-Heinemann 37 225 Wildwood Avenue 38 Woburn, MA 01801-2041 39 Tel: 781-904-2500 40 Fax: 781-904-2620 41 For information on all Newnes publications available, contact our World Wide Web home 42 page at: http://www.newnespress.com 43 44 10987654321 Short45 Reg46 Printed in the United States of America 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page v Dedicated to the memory of Helge Granberg, 1 who died suddenly in January, 1996 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45Short 46Reg 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page vi 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Short45 Reg46 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page vii CONTENTS 1 2 Preface xi 3 Acknowledgments xiii 4 5 CHAPTER 1 Understanding RF Data Sheet Parameters 1 6 Introduction 1 7 D.C. Specifications 1 8 Maximum Ratings and Thermal Characteristics 5 9 Power Transistors: Functional Characteristics 9 10 Low Power Transistors: Functional Characteristics 14 11 Linear Modules: Functional Characteristics 18 12 Power Modules: Functional Characteristics 26 13 Data Sheets of the Future 30 14 15 CHAPTER 2 RF Transistor Fundamentals 31 16 17 What’s Different About RF Transistors? 31 18 Transistor Characteristics in Specific Applications 32 19 Bandwidth Considerations in Selecting Transistors 34 20 MOSFETs Versus Bipolars in Selecting a Transistor 38 21 Other Factors in RF Power Transistor Selection 38 22 CHAPTER 3 FETs and BJTs: Comparison of Parameters 23 and Circuitry 43 24 25 Types of Transistors 43 26 Comparing the Parameters 44 27 Circuit Configurations 48 28 Common Emitter and Common Source 50 29 Common Base and Common Gate 52 30 Common Collector and Common Drain 54 31 32 CHAPTER 4 Other Factors Affecting Amplifier Design 57 33 Classes of Operation 57 34 Forms of Modulation 60 35 Biasing to Linear Operation 64 36 Operating Transistors in a Pulse Mode 72 37 38 CHAPTER 5 Reliability Considerations 75 39 Die Temperature and Its Effect on Reliability 75 40 Other Reliability Considerations 81 41 42 CHAPTER 6 Construction Techniques 87 43 Types of Packages 87 44 The Emitter/Source Inductance 93 45Short Laying Out a Circuit Board 97 46Reg 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page viii viii Contents 1 Tips for Systematic PC Layout Design 102 2 Mounting RF Devices 103 3 RF Modules 109 4 5 CHAPTER 7 Power Amplifier Design 113 6 Single-Ended, Parallel, or Push-Pull 113 7 Single-Ended RF Amplifier Designs: Lumped Circuit Realization 113 8 Distributed Circuit Realization 114 9 Quasi-Lumped Element Realization 116 10 Parallel Transistor Amplifiers: Bipolar Transistors 117 11 MOSFETs 119 12 Push-Pull Amplifiers 120 13 Impedances and Matching Networks 123 14 Interstage Impedance Matching 127 15 A Practical Design Example of a Single Stage 129 16 Component Considerations 130 17 Capacitors at Radio Frequencies 132 18 The First Matching Element: A Shunt C 133 19 The Input Impedance of a High Power RF Transistor 134 20 Modeling Capacitors at Low Impedances 135 21 Inductors 136 22 Stability Considerations 137 23 24 CHAPTER 8 Computer-Aided Design Programs 147 25 General 147 26 Inside Motorola’s Impedance Matching Program 151 27 MIMP Description 154 28 Smith Charts and MIMP 157 29 30 CHAPTER 9 After the Power Amplifier 161 31 VSWR Protection of Solid State Amplifiers 161 32 Testing the Circuit 165 33 Output Filtering 168 34 Types of Low Pass Filters 170 35 The Design Procedure 172 36 The Components 174 37 38 CHAPTER 10 Wideband Impedance Matching 179 39 40 Introduction to Wideband Circuits 179 41 Conventional Transformers 182 42 Twisted Wire Transformers 186 43 Transmission Line Transformers 190 44 Equal Delay Transmission Line Transformers 193 Short45 Reg46 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page ix Contents ix CHAPTER 11 Power Splitting and Combining 197 1 Introduction 197 2 Basic Types of Power Combiners 198 3 In-Phase and 180° Combiners 199 4 90° Hybrids 202 5 Line Hybrids 203 6 Ring Hybrids 204 7 Branch Line Couplers 206 8 Wilkinson Couplers 208 9 10 CHAPTER 12 Frequency Compensation and 11 Negative Feedback 211 12 Frequency Compensation 211 13 Negative Feedback 213 14 15 CHAPTER 13 Small Signal Amplifier Design 219 16 Scattering Parameters 219 17 Noise Parameters 220 18 Biasing Considerations 221 19 Power Gain 224 20 Stability 229 21 Summary of Gain/Noise Figure Design Procedures 233 22 Actual Steps in Low Power Amplifier Design 234 23 Determining Desired Values of Source and Load Impedances 235 24 Circuit Realization 243 25 26 CHAPTER 14 LDMOS RF Power Transistors and 27 Their Applications 259 28 by Prasanth Perugupalli, Larry Leighton, Jan Johansson, 29 and Qiang Chen 30 Introduction 259 31 LDMOSFET Versus Vertical MOSFET 260 32 Device Design 261 33 LDMOS Characteristics 264 34 LDMOS Transistors for RF Power Applications 267 35 Some FET Approximations 267 36 Applications of LDMOS Transistors in Current Generation 37 Cellular Technologies 271 38 RF Power Amplifier Characteristics 273 39 Practical Example of Designing a W-CDMA Power Amplifier 277 40 Circuit Techniques for Designing Optimum CDMA Amplifiers 281 41 Modeling of LDMOS Transistors 283 42 Comments 290 43 44 Index 293 45Short 46Reg 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page x 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Short45 Reg46 10500_00_i-xvi_7jb.qxd 11/20/00 2:55 PM Page xi 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PREFACE 15 16 This book is about radio frequency (RF) transistors. It primarily focuses on ap- 17 plications viewed from the perspective of a semiconductor supplier who, over the 18 years, has been involved not only in the manufacture of RF transistors, but also 19 their use in receivers, transmitters, plasma generators, magnetic resonance imag- 20 ing, etc. 21 Since the late 1960s, Motorola Semiconductors has been at the forefront in the 22 development of solid state transistors for use at radio frequencies. The authors 23 have been a part of this development since 1970. Much information has been ac- 24 quired during this time, and it is our intention in writing this book to make the 25 bulk of that information available to users of RF transistors in a concise manner 26 and from a single source.