High-End EUV Photomask Repairs for Advanced Nodes

High-end EUV Photomask Repairs for advanced nodes Dr. Michael Waldow Product Manager vZTech - Virtual SMS Tech Conference, 18.05.2021 Agenda 1 Introduction 2 High-end EUV photomask repairs 3 Summary <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">2</li></ul>Agenda 1 Introduction 2 High-end EUV photomask repairs 3 Summary <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">3</li></ul>Introduction EUV High-Volume manufacturing ramping up SAMSUNG newsroom MAY 21, 2021 “…new production line in Pyeongtaek, Korea…will produce 14- nanometer DRAM and 5-nanometer logic, …based on EUV...” Anandtech.com - APRIL 02, 2021 C. C. Wei – TSMC - CEO & Vice Chairman* JULY 16, 2020 ‚Next, let me talk about our N5 ramp up and N4 introduction. N5 is the foundry industry's most advanced solution with best PPA. N5 is already in volume production with good yield, while we continue to improve the productivity and performance of the EUV tools. We are seeing robust demand for N5 and expect a strong ramp of N5 in the second half of this year, driven by both 5G smartphones and HPC applications.‘ “… South Korea authorities this week gave SK Hynix a green light to build a new, 120 trillion won ($106.35 billion) fab complex…. using process technologies that rely on extreme ultraviolet lithography (EUV)…’ ▪ EUV is becoming more and more important and Intel: The Empire Strikes Back** MAY 21, 2021 amount of EUV lithographic layers is rising ‚while the outlook on EUV was still quite uncertain. Hence, Intel's initial 7nm seems to have used EUV quite conservatively, in relatively few layers. Intel said the new 7nm process flow (as it has been developed since mid-2020) uses over 100% more EUV. We have now fully embraced EUV", Pat Gelsinger said…’ ▪ First consumer products based on EUV technology are already on the market ▪ On the other hand EUV photomasks possess the highest numbers of defects Sources Efficient and reliable way to repair high- end photomasks is essential **Q2 2020 Taiwan Semiconductor Manufacturing Co Ltd Earnings Call, <a href="/goto?url=https://seekingalpha.com/article/4427816-intel-the-empire-strikes-back" target="_blank">**https://seekingalpha.com/article/4427816-intel-the-empire-strikes-back </a><ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">4</li></ul>Introduction – Photomask repair MeRiT® Mask repair technology Photomask repair tool MeRiT® at a glance ▪ MeRiT® neXT system is the industry-standard for high-end photomask repair systems ▪ Enables the repair of smallest defects on todays’ photomasks Principle of operation ▪ Exposure with focused electron beam ▪ Adsorption of precursor molecules <ul style="display: flex;"><li style="flex:1">Repair of clear defects - deposition </li><li style="flex:1">Repair of opaque defects - etching </li></ul><ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">5</li></ul>What is contributing to resolution of MeRiT® Tools Analogy: What contributes to draw with high accuracy? Analogy: Contributions to draw with high accuracy Ink Spilling Drawing Small Shiver/ Tremor Sharpness <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">6</li></ul>What is contributing to resolution of MeRiT® Tools Transfer to MeRiT® technology - Electron beam as a pen and precursor molecules as ink Contributions to MeRiT® repair resolution Secondary Electrons Repair Resolution System Jitter E- Beam Spot Size <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">7</li></ul>Contributing to resolution of MeRiT® Tools Main factor I to Repair Resolution – Secondary Electrons Secondary electrons as function of electron voltage 140% 120% 100% 80% 60% Secondary Electrons 40% 20% 0% Repair Resolution <ul style="display: flex;"><li style="flex:1">200 </li><li style="flex:1">400 </li><li style="flex:1">600 </li><li style="flex:1">800 </li><li style="flex:1">1000 </li><li style="flex:1">1500 </li><li style="flex:1">2000 </li></ul>Electron beam voltage [V] ▪ Scattered secondary electrons increase significantly with increasing voltages E- Beam Spot Size System Jitter Higher repair resolutions can be achieved by operation at lower electron beam voltages <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">8</li></ul>Contributing to resolution of MeRiT® Tools Main factor II to Repair Resolution – Electron Beam Spot Size Beam spot size as function of electron voltage 140% 120% 100% 80% Standard column New column 60% Secondary Electrons 40% 20% 0% Repair Resolution <ul style="display: flex;"><li style="flex:1">200 </li><li style="flex:1">400 </li><li style="flex:1">600 </li><li style="flex:1">800 </li><li style="flex:1">1000 </li><li style="flex:1">1500 </li><li style="flex:1">2000 </li></ul>Electron beam voltage [V] ▪ In general electron beam column resolution decreases with E- Beam Spot Size decreasing voltage System Jitter For higher repair resolution a new column with a smaller beam spot size at given voltage need to be used <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">9</li></ul>Contributing to resolution of MeRiT® Tools Main factor III to Repair Resolution – System Dynamics Tool jitter as as function of diffrent tool platforms Tool Jitter MeRIT tools 100% 75% Standard Tool Platform 50% 25% 0% New Tool PLatform Secondary Electrons -25% -50% -75% -100% Repair Resolution <ul style="display: flex;"><li style="flex:1">0</li><li style="flex:1">0,2 </li><li style="flex:1">0,4 </li><li style="flex:1">0,6 </li><li style="flex:1">0,8 </li><li style="flex:1">1</li><li style="flex:1">1,2 </li><li style="flex:1">1,4 </li></ul>Time [s] ▪ MeRiT® repair resolution is detoriated by tool vibrations/jitter System Jitter E- Beam Spot Size In order to make use of full potential of new MeRiT® repair tools, system jitter has to be minimized <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">10 </li></ul>MeRiT® LE overview Next generation mask repair tool MeRiT® LE - What‘s new? 1. MeRiT® LE is operating at lower electron voltage ▪ Tool is optimized for lower energy of 400eV compared to MeRiT® neXT, which operates at 600eV 2. MeRiT® LE is equiped with a new electron beam column ▪ Tool is equipped with Low-kV Objective Lens optimized for low beam energies 3. Improved system jitter enabling highest repair resolution ▪ Re-designed tool platform including improved acoustic enclosure and improved tool damping <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">11 </li></ul>Agenda 1 Introduction 2 High-end EUV photomask repairs 3 Summary <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">12 </li></ul>High-end EUV photomask repairs MeRiT® repair and AIMS® EUV actinic measurements in the mask shop ecosystem Mask making process Pattern Generation Cleaning <ul style="display: flex;"><li style="flex:1">Metrology </li><li style="flex:1">Tuning </li><li style="flex:1">Inspection </li><li style="flex:1">Disposition </li><li style="flex:1">Repair </li></ul>Verification MeRiT® Repair AIMS® EUV AIMS® EUV <ul style="display: flex;"><li style="flex:1">1</li><li style="flex:1">2</li><li style="flex:1">4</li></ul>3<ul style="display: flex;"><li style="flex:1"></li><li style="flex:1"></li><li style="flex:1"></li></ul>  <ul style="display: flex;"><li style="flex:1">Defective </li><li style="flex:1">Defect-free </li></ul><ul style="display: flex;"><li style="flex:1">EUV mask </li><li style="flex:1">EUV mask </li></ul>Printability test by AIMS® EUV technology Detailed analysis by high resolution e-beam E-beam mask repair by MeRiT® Printability check after repair by AIMS® EUV <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">13 </li></ul>High-end EUV photomask repairs EUV ETCH repair of bridge defect Bridge Defect Defect Type: Bridge defect ▪ Length 500nm ▪ Half-Pitch 60nm on mask MeRiT® LE repair Pre-repair SEM image MeRiT® LE Post-repair SEM image repair AIMS® EUV analysis <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">14 </li></ul>High-end EUV photomask repairs AIMS® EUV Analysis of bridge defect repair Analysis of CD with AIMS™ Auto Analysis (AAA) Post-repair aerial image by AIMS™ EUV Bridge Defect xMeRiT® LE repair Shown results are at best focus yAlong center of defect ▪ Along the center of the defect the CD variation is AIMS® EUV analysis below the CD variation of the reference structures ▪ A maximum ΔCD of 2.6nm results for the repair Successful EUV bridge repair verified by AIMS® EUV <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">15 </li></ul>High-end EUV photomask repairs Small extrusion defect on a EUV photomask Defect Type: Extrusion Bridge Defect Analysis of CD with AIMS® Auto Analysis (AAA) ▪ Length 500nm ▪ Half-Pitch 88nm on mask 98 96 94 92 90 88 86 84 CD Along center of defect SEM defect image Tiny <10nm extrusion! AIMS® EUV printability test AIMS® EUV defect image <ul style="display: flex;"><li style="flex:1">-500 </li><li style="flex:1">0</li><li style="flex:1">500 </li></ul>Y position / nm MeRiT® LE repair ▪ Aerial image is clearly affected by tiny extrusion defect ▪ On average detected CD deviation from reference analysed to be smaller than 10nm <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">16 </li></ul>High-end EUV photomask repairs EUV ETCH repair of small extrusion defect Defect Type: Extrusion repair ▪ Length 500nm Extrusion Defect ▪ Half-Pitch 88nm on mask Tiny <10nm extrusion! MeRiT® LE repair Pre-repair SEM image AIMS® EUV analysis MeRiT® LE repair Post-repair SEM image <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">17 </li></ul>High-end EUV repairs AIMS® EUV Analysis of tiny extrusion repair Analysis of CD with AIMS® Auto Analysis (AAA) Post-repair aerial image by AIMS® EUV Extrusion Defect 92 90 88 86 84 Repair xMeRiT® LE repair Shown results are at best focus yAlong center of defect <ul style="display: flex;"><li style="flex:1">0</li><li style="flex:1">500 </li><li style="flex:1">1000 </li><li style="flex:1">1500 </li></ul>CD Center Y [nm] ▪ Along the center of the defect the CD variation is AIMS® EUV analysis below the CD variation of the reference structures ▪ A maximum ΔCD of 3.3nm results for the repair Successful tiny extrusion repair <10nm verified by AIMS® EUV <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">18 </li></ul>High-end EUV photomask repairs EUV DEPO broken-line defect repair Defect Type: Broken-line ▪ Length 500nm Broken Line Defect ▪ Half-Pitch 60nm on mask MeRiT® LE repair Pre-repair SEM image MeRiT® LE AIMS® EUV analysis Post-repair SEM image repair <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">19 </li></ul>High-end EUV photomask repairs AIMS® EUV Analysis of broken line defect repair Post-repair aerial image by AIMS™ EUV Analysis of CD with AIMS™ Auto Analysis (AAA) Broken Line Defect 62 61 60 59 58 57 56 xMeRiT® LE repair Shown results are at best focus Along center of defect y<ul style="display: flex;"><li style="flex:1">-800 </li><li style="flex:1">-600 </li><li style="flex:1">-400 </li><li style="flex:1">-200 </li><li style="flex:1">0</li><li style="flex:1">200 </li><li style="flex:1">400 </li><li style="flex:1">600 </li><li style="flex:1">800 </li></ul>y / nm ▪ Along the center of the defect the CD variation is AIMS® EUV analysis about the CD variation of the reference structures ▪ A maximum ΔCD of 3.8nm results for the repair Successful EUV broken line repair verified by AIMS® EUV <ul style="display: flex;"><li style="flex:1">Carl ZEISS SMT GmbH, Dr. Michael Waldow, Semiconductor Mask Solutions </li><li style="flex:1">18.05.2021 </li><li style="flex:1">20 </li></ul>

High-End EUV Photomask Repairs for Advanced Nodes

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