4Gb: x16 DDR4 SDRAM Features DDR4 SDRAM EDY4016A - 256Mb x 16 Features • Databus write cyclic redundancy check (CRC) • Per-DRAM addressability •VDD = VDDQ = 1.2V ±60mV • Connectivity test •VPP = 2.5V, –125mV/+250mV • JEDEC JESD-79-4 compliant • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O Options1 Marking •TC of 0°C to 95°C • Revision A – 64ms, 8192-cycle refresh at 0°C to 85°C • FBGA package size – 32ms at 85°C to 95°C – 96-ball (7.5mm x 13.5mm) BG • 8 internal banks: 2 groups of 4 banks each • Timing – cycle time •8n-bit prefetch architecture – 0.625ns @ CL = 24 (DDR4-3200) -JD • Programmable data strobe preambles – 0.750ns @ CL = 19 (DDR4-2666) -GX • Data strobe preamble training – 0.833ns @ CL = 16 (DDR4-2400) -DR • Command/Address latency (CAL) • Packaging • Multipurpose register READ and WRITE capability – Lead-free (RoHS-compliant) and hal- - F • Write and read leveling ogen-free • Self refresh mode • Low-power auto self refresh (LPASR) Notes: 1. Not all options listed can be combined to • Temperature controlled refresh (TCR) define an offered product. Use the part • Fine granularity refresh catalog search on http://www.micron.com • Self refresh abort for available offerings. • Maximum power saving 2. Restricted and limited availability. • Output driver calibration • Nominal, park, and dynamic on-die termination (ODT) • Data bus inversion (DBI) for data bus • Command/Address (CA) parity Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns) -JD1 3200 24-24-24 15.0 15.0 15.0 -GX2 2666 19-19-19 14.25 14.25 14.25 -DR3 2400 16-16-16 13.32 13.32 13.32 Notes: 1. Backward compatible to 2666 CL = 20, 2400 CL = 18), 2133 CL = 16, 1866 CL = 14, 1600 CL = 12. 2. Backward compatible to 2400 CL = 17, 2133 CL = 15, 1866 CL = 13, 1600 CL = 11. 3. Backward compatible to 2133 CL = 15, 1866 CL = 13, 1600 CL = 11. Table 2: Addressing Parameter 256 Meg x 16 Number of bank groups 2 Bank group address BG0 PDF: 09005aef85f537bf Micron Technology, Inc. reserves the right to change products or specifications without notice. 4gb_ddr4_dram_2e0d.pdf - Rev. E 7/17 EN 1 © 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb: x16 DDR4 SDRAM Features Table 2: Addressing (Continued) Parameter 256 Meg x 16 Bank count per group 4 Bank address in bank group BA[1:0] Row addressing 32K (A[14:0]) Column addressing 1K (A[9:0]) Page size1 2KB Note: 1. Page size is per bank, calculated as follows: Page size = 2COLBITS × ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Micron Memory Japan DDR4 Part Numbering Figure 1: 4Gb DDR4 Part Numbers E D Y 40 16 A A BG - JD - F- D Manufacturer: Packing Media: D = Dry pack (tray) Micron Memory Japan R = Tape and Reel Packaging: Packaged device Packaging: Lead-free (RoHS-compliant) and halogen-free Product Type: DDR4 Speed: JD = DDR4-3200 (24-24-24) Density: 4Gb GX = DDR4-2666 (19-19-19) DR = DDR4-2400 (16-16-16) Organization: x16 Package: FBGA Power Supply/VDDQ Term.: 1.2V Die revision PDF: 09005aef85f537bf Micron Technology, Inc. reserves the right to change products or specifications without notice. 4gb_ddr4_dram_2e0d.pdf - Rev. E 7/17 EN 2 © 2014 Micron Technology, Inc. All rights reserved. 4Gb: x16 DDR4 SDRAM Features Contents General Notes and Description ....................................................................................................................... 18 Description ................................................................................................................................................ 18 Industrial Temperature ............................................................................................................................... 18 General Notes ............................................................................................................................................ 18 Definitions of the Device-Pin Signal Level ................................................................................................... 19 Definitions of the Bus Signal Level ............................................................................................................... 19 Ball Assignments ............................................................................................................................................ 20 Ball Descriptions ............................................................................................................................................ 21 Package Dimensions ....................................................................................................................................... 24 State Diagram ................................................................................................................................................ 25 Functional Description ................................................................................................................................... 27 RESET and Initialization Procedure ................................................................................................................. 28 Power-Up and Initialization Sequence ......................................................................................................... 28 RESET Initialization with Stable Power Sequence ......................................................................................... 31 Uncontrolled Power-Down Sequence .......................................................................................................... 32 Programming Mode Registers ......................................................................................................................... 33 Mode Register 0 .............................................................................................................................................. 36 Burst Length, Type, and Order ..................................................................................................................... 38 CAS Latency ............................................................................................................................................... 39 Test Mode .................................................................................................................................................. 39 Write Recovery(WR)/READ-to-PRECHARGE ............................................................................................... 39 DLL RESET ................................................................................................................................................. 39 Mode Register 1 .............................................................................................................................................. 40 DLL Enable/DLL Disable ............................................................................................................................ 41 Output Driver Impedance Control ............................................................................................................... 42 ODT RTT(NOM) Values .................................................................................................................................. 42 Additive Latency ......................................................................................................................................... 42 DQ RX EQ .................................................................................................................................................. 42 Write Leveling ............................................................................................................................................ 43 Output Disable ........................................................................................................................................... 43 Termination Data Strobe ............................................................................................................................. 43 Mode Register 2 .............................................................................................................................................. 44 CAS WRITE Latency .................................................................................................................................... 46 Low-Power Auto Self Refresh ....................................................................................................................... 46 Dynamic ODT ............................................................................................................................................ 46 Write Cyclic Redundancy Check Data Bus .................................................................................................... 46 Mode Register 3 .............................................................................................................................................. 47 Multipurpose Register ................................................................................................................................ 48 WRITE Command Latency When CRC/DM is Enabled ................................................................................. 49 Fine Granularity Refresh Mode .................................................................................................................... 49 Temperature Sensor Status ........................................................................................................................