Rochester Institute of Technology RIT Scholar Works Annual Microelectronic Engineering Conference Conferences (AMEC) Archive 5-1989 Conference of Microelectronic Research 1989 Louis Anastos Rochester Institute of Technology John Bettencourt Rochester Institute of Technology Ed Black Rochester Institute of Technology Maia Bodnarczuk Rochester Institute of Technology Scott rB uck Rochester Institute of Technology See next page for additional authors Follow this and additional works at: http://scholarworks.rit.edu/meec_archive Recommended Citation Anastos, Louis; Bettencourt, John; Black, Ed; Bodnarczuk, Maia; Bruck, Scott; Bush, John; Campbell, Brad; Carr, Cynthia; Cheskis, David; Clemens, Stephen; Curcio, John; Fetzer, Brian; Gardner, James; Gratzer, Kevin; Koszelak, Donald; Lam, David; La Pietra, Andrew; Leach, Richard; Leathersich, Cathy; Leilich, Fr.ank; Lewis, David; Lindstedt, Robert; Linton, Ray; Luciani, Antonio; Mason, Randall; Meister, Randall; Obuszewski, Kenneth; Patterson, Ross; Phan, Tu; Picario, Paul; Raghavan, V; Rivero, Marco; Shire, Daniel; Strong, Matthew; Walters, Joseph; Wickharn, Matthew; and Wilkinson, William, "Conference of Microelectronic Research 1989" (1989). Annual Microelectronic Engineering Conference (AMEC) Archive. Book 3. http://scholarworks.rit.edu/meec_archive/3 This Full-Length Book is brought to you for free and open access by the Conferences at RIT Scholar Works. It has been accepted for inclusion in Annual Microelectronic Engineering Conference (AMEC) Archive by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. Authors Louis Anastos, John Bettencourt, Ed Black, Maia Bodnarczuk, Scott rB uck, John Bush, Brad Campbell, Cynthia Carr, David Cheskis, Stephen Clemens, John Curcio, Brian Fetzer, James Gardner, Kevin Gratzer, Donald Koszelak, David Lam, Andrew La Pietra, Richard Leach, Cathy Leathersich, Fr.ank Leilich, David Lewis, Robert Lindstedt, Ray Linton, Antonio Luciani, Randall Mason, Randall Meister, Kenneth Obuszewski, Ross Patterson, Tu Phan, Paul Picario, V Raghavan, Marco Rivero, Daniel Shire, Matthew Strong, Joseph Walters, Matthew Wickharn, and William Wilkinson This full-length book is available at RIT Scholar Works: http://scholarworks.rit.edu/meec_archive/3 Microelectronic Engineering at RIT Mindpot~r far Tomorrow’s Technology ROCHESTER INSTITUTE OF TECHNOLOGY JOURNAL OF MICROELECTRONIC RESEARCH VOLUME IV MAY 1989 Editor: Michael A. Jackson Technical Editors: Dr. Lynn F. Fuller, Dr. I. Renan Turkman, Dr. Richard L. Lane, Dr. Santosh Kurinec, Robert E. Pearson, Katherine H. Hesler, and Bruce N. Smith Rochester Institute of Technology Microelectronic Engineering One Lomb Memorial Drive Rochester, New York 14623 (716)475-6065 ____ I II — II III II I I I_Ill ROCHESTER INSTITUTE OF TECHNOLOGY II ____ MICROELECTRONIC ENGINEERING FORWARD The papers which follow summarize the research performed by the graduating seniors from the Microelectronic Engineering Program at the Rochester Institute of Technology (RIT). Prior to their final quarter of study, the students submit a proposal for a research topic including the relevance of the project to the Microelectronics field and the Engineering program at RIT, methodology, tentative timetable and budget. After a faculty critique, the pro5ect is either accepted as proposed or revised. Thereafter, the student performs the research independently with weekly meetings with the course coordinator to monitor progress, obtain supplies, and revise the experiment as results develop. Their results are presented orally at the Ar~ne.~al Microelectronic Engineering Conference and in written form in this journal. The student is free (and encouraged) to seek the guidance of other faculty members, both in and outside the Microelectronic Engineering Faculty, researchers at other institutes, or industrial colleagues. The course is designed to model the type of activities involved in graduate study programs. It also provides the student with the opportunity to exercise the skills obtained over the last five years and/or to develop new skills. The main area of concern for the course coordinator is guidance in the areas of technical writing and oral presentation. A series of seminars, on areas of Microelectronics, that are not adequately covered in the course work, complement the experimental work. This provides the undergraduate students with an opportunity to prepare for their presentations by listening to the work of others. Overall, the Senior Seminar and Research Course offers the RIT student an ‘unique experience to obtain competence in both technical performance and in the presentation of their work in written and oral media. These are critical areas in Engineering that are often neglected in a conventional curriculum. We hope the reader will find this journal informative and ask your indulgence concerning any technical errors which may appear herein. While a strong effort is made to eliminate any mistakes in theory or practice, some escape our detection due to the nature of the course. We invite your comments and questions regarding any of the papers. Further details of the experiments are available upon request from the Microelectronic Engineering Office at RIT. We encourage input from others not directly involved with the Microelectronic Engineering Program at RIT so we may see ourselves through the “eyes” of others. It is this feedback which helps keep us current in our goal to provide quality engineers to the Microelectronic industry. Michael A. Jackson ~QO~ Course Coordinato ACKNOWL EDGMENTS A special note of appreciation is due to the people that assist the students in their work. While many of the students have individually cited those people directly involved with their project, the editors wish to acknowledge several individuals, who have directly or indirectly influenced these proz~ects. These people are the RIT technicians and maintenance staff, without whom, the facility would not function. A special note of thanks is due Scott Blondell and Gary Runkle, our Facilities Manager and Head Technician, respectively. Invariably, demands are placed on their time as students learn, modify, and or build equipment. Human nature being what it is, these demands rise “exponentially” as the student conference nears. Scott and Gary do all they can for the students, and it shows in the wide variety of projects that are reported herein. Thanks guys’ Without you, this course would not be the success it is today. TABLE OF CONTENTS SECOND LEVEL ALIGNMENT OF THE PE MODEL 140 1 Louis 6. Anastos ADVANCES IN PROCESS MODELING AT RIT: SUPREM III AND MINIMOS ... 6 JohnBettencourt CHARACTERIZATION OF WELLS FOR THE CMOS PROCESS 12 Ed Black ANALYSIS OF KTI—820 POSITIVE RESIST USING THE PERKIN—ELMER ... 18 DEVELOPMENT RATE MONITOR Maia Bodnarczuk USING THE GCA 4800 DSW WAFER STEPPER AS A PHOTOREPEATER FOR .. 23 THE FABRICATIDN OF CHROME AND ALUMINUM MASKS Scott M. Bruck ECL CIRCUITS 29 John J. Bush STUDY OF THE CHARACTERISTICS OF DYED PHOTORESIST 37 BradCampbell CHARACTERIZATION OF ARC 42 Cynthia A. Carr IMPURITY CONCENTRATION PROFILE DETERMINATION BY 47 CAPACITANCE-VOLTAGE MEASUREMENTS David J. Cheskis COMPUTER AIDED RETICLE MAKING FOR A MICROMOTOR 53 Stephen B. Clemens TRENCH ISOLATION STUDIES 61 John P. Curcio CHARACTERIZATION OF A NEW E-BEAM RESIST 67 Brian Fetzer CHARACTERIZATION OF A SILICON NITRIDE PLASMA ETCH 73 SELECTIVITIES AND UNIFORMITY James A. Gardner’ DETERMINATION OF CARRIER LIFETIME FROM MOS CAPACITORS 80 Kevin R. Gratzer SILYLATION OF POSITIVE RESIST 85 DonaldR. Koszelak ELECTRDMIGRATION TESTING OF ALUMINUM INTERCONNECTS 90 David Lam MULTI-POINTCLEANROOMMONITORIN6 97 Andrew La Pietra FERROELECTRIC THIN FILMS: PREPARATION OF A COMPLEX ALKOXIDE.,. 103 PbZr.5Ti.5O3 Richard A. Leach iii GROWTH AND CHARACTERIZATION OF ANODIC ALUMINUM OXIDE . 109 Cathy Leathersich F OUR BIT CMOS ALU 114 Fr.ank Leilich THE CHARACTERIZATION OF AN ALL ENHANCEMENT PMOS OP-AMP 123 David L. Lewis IMAGE REVERSAL OPTIMIZATION AND A POSITIVE TONE LIFT-OFF .... 130 PROCESS WITH AZ5214-E PHOTORESIST....Robert C. Lindstedt GREEDY CHANNEL ROUTER IMPLEMENTATION IN FORTRAN 137 Ray S. Linton FABRICATION OF AIR-BRIDGES FOR MILLIMETER WAVE INTEGRATED ... 143 CIRCUITS AntonioL. Luciani CONSTRUCTION OF A QUASI-STATIC C-V TEST STATION 149 Randall 3. Mason PLASMA ETCH OPTIMIZATION OF SILICON DIOXIDE WITH A RESIST ... 154 MASk E r i c P . M e is t e r DESIGN OF A EEPROM CELL AND THIN OXIDE EVALUATION 159 Kenneth Obuszewski PROCESS DEVELOPMENT OF MULTILEVEL METALLIZATION UTILIZING ... 165 NATIONAL SEMICONDUCTOR POLYIMIDE EL-5510 R oss P a tt e r s on CHARACTERIZATION OF INTEGRATED INJECTION LOGIC 170 Tu T. Phan FABRICATION OF A SINGLE LEVEL METAL CCD SHIFT REGISTER 174 Paul F. Picario PLANAR OPTICAL WAVEGUIDES USING A SILVER-SODIUM ION 181 EXCHANGE V. P. Raghavan nMOSSTANDARDCELLLIBRARY 187 Marco Rivero CONTAMINATION IN RIT PROCESSING 192 Daniel C. Shire PLASMA DAMAGE TO NMOS CAPACITORS 198 Matthew 3. Strong INVESTIGATION OF LOCOS PROCESS USING NITROGEN IMPLANTATION .. 204 .Joseph W. Walters ION IMPLANTATION TO ADJUST NMOS THRESHOLD VOLTAGES 210 Matthew A. Wickharn INTEGRATEDHALLEFFECTSENSOR 215 WilliamH. Wilkinson V Second Level Alignment of the PE MODEL 140 Louis 6. Anastos 5th Year Microelectronic Engineering Student Rochester Institute of Technology ABSTRACT The Perkin Elmer Model 140 was investigated for second level alignment. Using a photolithographic evaluation mask, inspection of six wafers yielded overlay errors. The average