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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MTD1N50E Preferred Device PowerMOSFET 1Amp,500Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage http://onsemi.com MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a 1 AMPERE drain−to−source diode with a fast recovery time. Designed for high 500 VOLTS voltage, high speed switching applications in power supplies, Ω converters and PWM motor controls, these devices are particularly RDS(on) = 5 well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin N−Channel against unexpected voltage transients. D • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a G Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits S • IDSS and VDS(on) Specified at Elevated Temperature MARKING MAXIMUM RATINGS (TC = 25°C unless otherwise noted) DIAGRAM Rating Symbol Value Unit Drain−to−Source Voltage V 500 Vdc 4 DSS CASE 369A YWW T Drain−to−Gate Voltage (R = 1.0 MΩ) V 500 Vdc DPAK GS DGR 2 1N50E 1 STYLE 2 Gate−to−Source Voltage 3 − Continuous VGS ±20 Vdc − Non−repetitive (tp ≤ 10 ms) VGSM ±40 Vpk Y = Year WW = Work Week Drain Current − Continuous ID 1.0 Adc T = MOSFET − Continuous @ 100°C ID 0.8 − Single Pulse (t ≤ 10 µs) I 3.0 Apk p DM PIN ASSIGNMENT Total Power Dissipation @ TC = 25°C PD 40 Watts 4 Derate above 25°C 0.32 W/°C Drain Total Power Dissipation @ TA = 25°C, when 1.75 Watts mounted to minimum recommended pad size Operating and Storage Temperature TJ, Tstg −55 to °C Range 150 1 2 3 Single Pulse Drain−to−Source Avalanche EAS 45 mJ Gate Drain Source Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, ORDERING INFORMATION IL = 3.0 Apk, L = 10 mH, RG = 25 Ω) Device Package Shipping Thermal Resistance °C/W − Junction to Case RθJC 3.13 MTD1N50E DPAK 75 Units/Rail − Junction to Ambient RθJA 100 − Junction to Ambient, when mounted to RθJA 71.4 MTD1N50E1 DPAK 75 Units/Rail minimum recommended pad size MTD1N50ET4 DPAK 2500 Tape & Reel Maximum Temperature for Soldering TL 260 °C Purposes, 1/8″ from case for 10 seconds Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: August, 2004 − Rev. XXX MTD1N50E/D MTD1N50E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 0.25 µAdc) 500 − − Vdc Temperature Coefficient (Positive) − 480 − mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 500 Vdc, VGS = 0 Vdc) − − 10 (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 100 Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 3.2 4.0 Vdc Temperature Coefficient (Negative) − 6.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) RDS(on) − 4.3 5.0 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 1.0 Adc) − 4.5 6.0 (ID = 0.5 Adc, TJ = 125°C) − − 5.3 Forward Transconductance (VDS = Vdc, ID = 0.5 Adc) gFS 0.5 0.9 − mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss − 215 315 pF (V = 25 Vdc, Vd V = 10 Vdc, Vd Output Capacitance DS GS C − 30.2 42 f = 11.0.0 MHz)MHz) oss Reverse Transfer Capacitance Crss − 6.7 12 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 8.0 20 ns (V = 250 Vdc, I = 1.0 Adc, Rise Time DD D tr − 9.0 10 VGS =10Vdc= 10 Vdc, Turn−Off Delay Time t − 14 30 RG = 9.1 Ω) d(off) Fall Time tf − 17 30 Gate Charge QT − 7.4 9.0 nC (S(See FiFigure 8) Q − 1.6 − (VDS = 400 Vdc,Vdc, ID = 1.01.0 Adc,Adc, 1 V = 10 Vdc) GS Q2 − 3.8 − Q3 − 5.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1.) (IS = 1.0 Adc, VGS = 0 Vdc) VSD Vdc (IS = 1.0 Adc, VGS = 0 Vdc, − 0.81 1.2 TJ = 125°C) − 0.68 − Reverse Recovery Time trr − 141 − ns (S(See FiFigure 14) ta − 82 − (IS ==10AdcV 1.0 Adc, VGS = 0 Vdc, Vdc t − 58.5 − dIS/dt = 100 A/µs) b Reverse Recovery Stored QRR − 0.65 − µC Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 MTD1N50E TYPICAL ELECTRICAL CHARACTERISTICS 2.0 2.0 TJ=25°C VGS=10V VDS≥10V 1.75 7V 1.75 8V 1.50 6V 1.50 1.25 1.25 1.0 1.0 0.75 0.75 ,DRAINCURRENT(AMPS) 0.50 ,DRAINCURRENT(AMPS) 0.50 T =100°C D 5V D J I I 25°C 0.25 0.25 −55°C 0 0 0 2 4 6 8 10 12 14 16 2.0 2.5 3.0 3.5 4.0 4.5 5.05.5 6.0 6.5 VDS,DRAIN−TO−SOURCEVOLTAGE(VOLTS) VGS,GATE−TO−SOURCEVOLTAGE(VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 10 6.0 V =10V GS TJ=25°C T =100°C J 5.5 8 5.0 6 VGS=10V 25°C 4.5 4 15V 4.0 −55°C 2 3.5 ,DRAIN−TO−SOURCERESISTANCE(OHMS) ,DRAIN−TO−SOURCERESISTANCE(OHMS) 0 3.0 DS(on) DS(on) R 0 0.4 0.8 1.2 1.6 2.0R 0 0.25 0.50 0.75 1.0 1.25 1.50 1.75 2.0 ID,DRAINCURRENT(AMPS) ID,DRAINCURRENT(AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage 2.5 10000 VGS=10V VGS=0V ID=0.5A 2.0 T =125°C 1000 J 1.5 100°C 100 1.0 ,LEAKAGE(nA) (NORMALIZED) DSS I 10 25°C ,DRAIN−TO−SOURCERESISTANCE 0.5 DS(on) R 0 1 −50 −25 0 25 50 75 100 125 150 0 100 200 300400 500 TJ,JUNCTIONTEMPERATURE(°C) VDS,DRAIN−TO−SOURCEVOLTAGE(VOLTS) Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3 MTD1N50E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted The capacitance (Ciss) is read from the capacitance curve at by recognizing that the power MOSFET is charge a voltage corresponding to the off−state condition when controlled.