Studies on Options for Thorium Utilisation
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Rule India Andpakistansanctionsother 15 Cfrparts742and744 Bureau Ofexportadministration Commerce Department of Part II 64321 64322 Federal Register / Vol
Thursday November 19, 1998 Part II Department of Commerce Bureau of Export Administration 15 CFR Parts 742 and 744 India and Pakistan Sanctions and Other Measures; Interim Rule federal register 64321 64322 Federal Register / Vol. 63, No. 223 / Thursday, November 19, 1998 / Rules and Regulations DEPARTMENT OF COMMERCE Regulatory Policy Division, Bureau of missile technology reasons have been Export Administration, Department of made subject to this sanction policy Bureau of Export Administration Commerce, P.O. Box 273, Washington, because of their significance for nuclear DC 20044. Express mail address: explosive purposes and for delivery of 15 CFR Parts 742 and 744 Sharron Cook, Regulatory Policy nuclear devices. [Docket No. 98±1019261±8261±01] Division, Bureau of Export To supplement the sanctions of Administration, Department of RIN 0694±AB73 § 742.16, this rule adds certain Indian Commerce, 14th and Pennsylvania and Pakistani government, parastatal, India and Pakistan Sanctions and Avenue, NW, Room 2705, Washington, and private entities determined to be Other Measures DC 20230. involved in nuclear or missile activities FOR FURTHER INFORMATION CONTACT: to the Entity List in Supplement No. 4 AGENCY: Bureau of Export Eileen M. Albanese, Director, Office of to part 744. License requirements for Administration, Commerce. Exporter Services, Bureau of Export these entities are set forth in the newly ACTION: Interim rule. Administration, Telephone: (202) 482± added § 744.11. Exports and reexports of SUMMARY: In accordance with section 0436. -
Vice-Chancellor‟S Report
Vice-Chancellor‟s Report Birla Institute of Technology, Mesra, Ranchi founded by the philanthropist, industrialist Late Shri B.M. Birla in 1955, attained the status of a Deemed to be University in the year 1986. The rich legacy of the founder has been carried forward by his son Padma Bhushan Late Shri. G. P. Birla and his grandson, the present Chairman of our Board of Governors, Shri C. K. Birla through continued emphasis on academic excellence and contribution to nation building. BIT Mesra, by virtue of the quality of its academic programmes, has consistently been ranked amongst the leading technical Institutes of the country. The Institute offers academic programmes in 17 disciplines in the main Mesra campus and has 626 faculty members and over 12,000 students spread across various campuses The Institute has taken many initiatives to strengthen and expand the Teaching – Learning environment and to generate career opportunities for the students in reputed organizations. Some of these initiatives are the G P Birla Scholarship Scheme, Best Student‘s Project Award, Inter Hostel Indoor Sports Award and a strong campus placement programme. A brief report on salient activities of the Institute, undertaken during the year 2018-19 follows. 1. Board of Governors: Key decisions regarding development of the institute which were taken by the BOG are listed below. Revised UG and PG curricula conforming to Outcome-Based Education (OBE)/Choice Based Credit System (CBCS) and revised Ph.D. Ordinance have been made operational in the AY 18-19. 9 UG students participated in Immersive Summer Research Experience (ISRE) at Illinois Institute of Technology (IIT), Chicago and 3 at Carnegie Melon University (CMU) with equal sharing of expenses by BIT, BIT Mesra Alumni Association-North America (BITMAA-NA) and the participants The 7th CPC stands fully implemented. -
P.Chellapandi, P.Puthiyavinayagam, T.Jeyakumar S.Chetal and Baldev Raj Indira Gandhi Centre for Atomic Research Kalpakkam - 603102
P.Chellapandi, P.Puthiyavinayagam, T.Jeyakumar S.Chetal and Baldev Raj Indira Gandhi Centre for Atomic Research Kalpakkam - 603102 IAEA-Technical Meeting on ‘Design, Manufacturing and Irradiation Behavior of Fast Reactor Fuels’ 30 May-3 June 2011, IPPE, Russia Scope of Presentation Nuclear Power & FBR Programme in India Economic advantages of high burnups Int. experience on achieving high burnup Roadmap of enhancing the burnup Experience with carbide & oxide fuels Highlights of R&D Future Plans India’s Nuclear Roadmap 70000 • PHWRs from indigenous Uranium Nuclear Power Capacity • PHWRs from imported Uranium 60000 Projection (in MWe) • Imported LWR to the max. extent of 40 GW(e) 50000 • PHWRs from spent enriched U from LWRs 40000 (undersafeguard) 30000 • FBRs from reprocessed Pu and U from PHWR 20000 • FBRs from reprocessed Pu and U from LWR (undersafeguard) 10000 • U-233-Thorium Thermal / Fast Reactors 0 2010 2012 2017 2022 2032 • India has indigenous nuclear power program (4780 MW out of 20 reactors) and expects to have 20,000 MWe nuclear capacity on line by 2020 and 63,000 MWe by 2032. • Now, foreign technology and fuel are expected to boost India's nuclear power plans considerably. All plants will have high indigenous engineering content. • India has a vision of becoming a world leader in nuclear technology due to its expertise in fast reactors and thorium fuel cycle. FBR Programme in India • Indigenous Design & Construction Future FBR • Comprehensiveness in development of • 1000 MWe • Pool Type Design, R&D and Construction • Metallic fuel • High Emphasis on Scientific Breakthroughs • Serial constr. • Indegenous • Synthesis of Operating Experiences • Beyond 2025 • Synthesis of Emerging Concepts (Ex.GENIV) • Focus on National & International Weight in t No. -
Structural and Dynamical Trends in Alkali-Metal
Article pubs.acs.org/JPCC Structural and Dynamical Trends in Alkali-Metal Silanides Characterized by Neutron-Scattering Methods † ‡ † § ∥ † ∥ Wan Si Tang,*, , Mirjana Dimitrievska,*, , Jean-Noel̈ Chotard, Wei Zhou, Raphael̈ Janot, ⊥ † Alexander V. Skripov, and Terrence J. Udovic † NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, United States ‡ Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742-2115, United States § National Renewable Energy Laboratory, Golden, Colorado 80401, United States ∥ Laboratoire de Reactivité ́et Chimie des Solides (LRCS), UMR 7314 CNRS, Universitéde Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens Cedex, France ⊥ Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg 620990, Russia *S Supporting Information ABSTRACT: Structural, vibrational, and dynamical properties of the mono- and mixed-alkali silanides (MSiH3, where M = K, Rb, Cs, K0.5Rb0.5,K0.5Cs0.5, and Rb0.5Cs0.5) were investigated by various neutron experiments, including neutron powder diffraction (NPD), neutron vibrational spectroscopy (NVS), neutron- scattering fixed-window scans (FWSs), and quasielastic neutron scattering (QENS) measurements. Structural characterization showed that the mixed compounds exhibit disordered (α) and ordered (β) phases for temperatures above and below about 200− 250 K, respectively, in agreement with their monoalkali correspondents. Vibrational and dynamical properties are strongly influenced by the cation environment; in particular, there is a red shift in the band energies of the librational and bending modes with increasing lattice size as a result of changes in the bond lengths and force constants. Additionally, slightly broader spectral features are observed in the case of the mixed compounds, indicating the presence of structural disorder caused by the random distribution of the alkali-metal cations within the lattice. -
Doping Effects on Transition-Metal Silicides: Crystal Structures and Physical Properties of Aluminium Doped Rhenium Silicide
BearWorks MSU Graduate Theses Summer 2020 Doping Effects on Transition-Metal Silicides: Crystal Structures and Physical Properties of Aluminium Doped Rhenium Silicide Victoria DeCocq Missouri State University, [email protected] As with any intellectual project, the content and views expressed in this thesis may be considered objectionable by some readers. However, this student-scholar’s work has been judged to have academic value by the student’s thesis committee members trained in the discipline. The content and views expressed in this thesis are those of the student-scholar and are not endorsed by Missouri State University, its Graduate College, or its employees. Follow this and additional works at: https://bearworks.missouristate.edu/theses Part of the Inorganic Chemistry Commons, and the Materials Chemistry Commons Recommended Citation DeCocq, Victoria, "Doping Effects on Transition-Metal Silicides: Crystal Structures and Physical Properties of Aluminium Doped Rhenium Silicide" (2020). MSU Graduate Theses. 3563. https://bearworks.missouristate.edu/theses/3563 This article or document was made available through BearWorks, the institutional repository of Missouri State University. The work contained in it may be protected by copyright and require permission of the copyright holder for reuse or redistribution. For more information, please contact [email protected]. DOPING EFFECTS ON TRANSITION-METAL SILICIDES: CRYSTAL STRUCTURES AND PHYSICAL PROPERTIES OF ALUMINIUM DOPED RHENIUM SILICIDE A Master’s Thesis -
Uranium Mining & Milling Industry in India
UraniumUranium MiningMining && MillingMilling IndustryIndustry inin IndiaIndia PerPer CapitaCapita PowerPower ConsumptionConsumption 7382 7281 8000 7000 5843 6000 5000 4000 2400 3000 Energy kWh/Capita 2000 473 1000 0 Germany Japan U.K. World India Country Power:Power: TheThe urgenturgent needneed • Per capita power consumption is low. • Installed generation cap. to be raised from 138.73 to 417GWe by 2020 • Share of nuclear power to increase from 4120 to 20,000 MWe by 2020 • Uranium requirement to increase accordingly PowerPower SourcesSources andand ConstraintsConstraints COAL : •Inadequate coal reserves •Strain on transportation •High ash in Indian coal and low calorific value. • CO 2 emissions OIL & GAS AS FUEL : •Inadequate reserve, 70% requirement is met by import •Complex geo-political environment PowerPower SourcesSources andand ConstraintsConstraints HYDROELECTRIC Limited to geographically suitable sites Sites are mostly away from demand centers. Dependent on rain-fall. Effect on ecology Displacement of vast population. NON-CONVENTIONAL Limited scope at present level of technology Poor capacity factor Diffused and intermittent source “……….. We must break the constraining limits of power shortages, which retard our development. Nuclear energy is not only cost effective, it is also a cleaner alternative to fossil fuels……” Dr. Manmohan Singh, Kalapakkam, rd 23 Oct,2004 EnergyEnergy SecuritySecurity forfor IndiaIndia Non- conventional Nuclear 20% 2.0% Nuclear 2.5% Hydro 26.0% Non- conventional 7% Fossil fuels Hydro 61% Fossil fuels -
Appendix a of Final Environmental Impact Statement for a Geologic Repository for the Disposal of Spent Nuclear Fuel and High-Lev
Appendix A Inventory and Characteristics of Spent Nuclear Fuel, High-Level Radioactive Waste, and Other Materials Inventory and Characteristics of Spent Nuclear Fuel, High-Level Radioactive Waste, and Other Materials TABLE OF CONTENTS Section Page A. Inventory and Characteristics of Spent Nuclear Fuel, High-Level Radioactive Waste, and Other Materials ................................................................................................................................. A-1 A.1 Introduction .............................................................................................................................. A-1 A.1.1 Inventory Data Summary .................................................................................................... A-2 A.1.1.1 Sources ......................................................................................................................... A-2 A.1.1.2 Present Storage and Generation Status ........................................................................ A-4 A.1.1.3 Final Waste Form ......................................................................................................... A-6 A.1.1.4 Waste Characteristics ................................................................................................... A-6 A.1.1.4.1 Mass and Volume ................................................................................................. A-6 A.1.1.4.2 Radionuclide Inventories ...................................................................................... A-8 A.1.1.4.3 -
Low Temperature Chemical Vapor Deposition and Method for Depositing a Tungsten Silicide Film with Improved Uniformity and Reduced Fluorine Concentration
Europaisches Patentamt 19 European Patent Office Office europeen des brevets © Publication number : 0 591 086 A2 12 EUROPEAN PATENT APPLICATION © Application number : 93480132.5 © int. ci.5: H01L 21/3205, C23C 16/44, C23C 16/42, H01L 21/285 @ Date of filing : 10.09.93 The application is published incomplete as filed @ Inventor : Gow, Thomas Richard (Article 93 (2) EPC). The points in the 4 Lyman Drive description at which the omission obviously Williston, VT 05495 (US) occurs have been left blank. Inventor : Lebel, Richard John Box 2255A RD1 © Priority : 30.09.92 US 954783 Sheldon, VT 05483 (US) @ Date of publication of application : @ Representative : Klein, Daniel Jacques Henri 06.04.94 Bulletin 94/14 Compagnie IBM France Departement de Propriete Intellectuelle @ Designated Contracting States : F-06610 La Gaude (FR) DE FR GB © Applicant : International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 (US) © Low temperature chemical vapor deposition and method for depositing a tungsten silicide film with improved uniformity and reduced fluorine concentration. © A tungsten silicide (WSix) film is formed by GROWTH RATE ( mg/m i n ) chemical vapor deposition using the reduction of tungsten hexafluoride (WF6) with dichlorosi- O — ro lane (SiH2CI2) referred to as DCS and a reduc- ing agent comprising silane (SiH4), hydrogen, or a mixture thereof. According to the method of the present invention, the WSix film is formed in a CVD reactor operating at a low pressure and at a wafer temperature between about 300 and 550°C. In the preferred embodiment, a thin nucleation layer is deposited before the WSix film. -
Tailoring of Transition Metal Silicides As Protective Thin Films On
THESIS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Tailoring of Transition Metal Silicides as Protective Thin Films on Austenitic Stainless Steel PUI LAM TAM Department of Materials and Manufacturing Technology CHALMERS UNIVERSITY OF TECHNOLOGY Gothenburg, Sweden 2011 Tailoring of Transition Metal Silicides as Protective Thin Films on Austenitic Stainless Steel PUI LAM TAM ISBN 978-91-7385-560-0 © PUI LAM TAM 2011 Doktorsavhandlingar vid Chalmers tekniska högskola Ny series nr 3241 ISSN 0346-718X Department of Materials and Manufacturing Technology Chalmers University of Technology SE-412 96 Gothenburg Sweden Tel: +46 (0)31-772 1000 Fax: +46 (0)31-772 1310 www.chalmers.se Printed by Chalmers Reproservice Göteborg, Sweden 2011 Abstract Transition metal silicide is an important material used in microelectronic devices and a possible candidate for high temperature application. The objective of this study is trying to make use of this material in a new way as protective thin films on engineering materials. The brittle nature of the silicides can thus be compensated by the ductile bulk material and the surface corrosion resistance can be improved. The choices of thin film constituents are targeted at the transition metal elements including titanium (Ti, Z = 22), chromium (Cr, Z = 24), iron (Fe, Z = 26) and nickel (Ni, Z = 28) in combination with silicon (Si, Z = 14) to form the binary-component intermetallic compounds by means of ion-beam sputter deposition, which was carried out in an ultrahigh vacuum (UHV) chamber at 10 -6 Pa. The chosen substrate material is AISI 304 stainless steel. Thin film characterisations were conducted by means of surface analysing instruments: X-ray photoelectron spectrometer (XPS) and grazing incidence X-ray diffractometer (GIXRD). -
Professor Jaikrishna and Professor Sn Mitra Memorial Award Lectures
PROFESSOR JAIKRISHNA AND PROFESSOR S.N. MITRA MEMORIAL AWARD LECTURES INDIAN NATIONAL ACADEMY OF ENGINEERING April 2018 INDIAN NATIONAL ACADEMY OF ENGINEERING GOVERNING COUNCIL Office Bearers President Dr. B.N. Suresh Vice-Presidents Dr. Indranil Manna Dr. Pumendu Ghosh Dr. Pradip Chief Editor of Publications Dr. Pumendu Ghosh Executive Director Brig RajanMinocha The Indian National Academy of Engineering (INAE) is an autonomous institution partly supported by the Department of Science and Technology, Govt, of India and is recognized as a Scientific and Industrial Research Organization (SIRO) by the Department of Scientific and Industrial Research, Govt, of India. Registered Office Indian National Academy of Engineering Unit No. 604-609, SPAZE, I Tech Park, 6th Floor, Tower A, Sector 49, Sohna Road Gurgaon - 122 002 (India) Phone: (91) - 0124 - 4239480 Fax: (91)-0124-4239481 Email: [email protected] Website: www.inae.in © Copyright 2018. Indian National Academy of Engineering. All rights reserved Published by the Indian National Academy of Engineering, New Delhi Printed at the Naman Stickers, 96-B, 4 D Campus, Murlipura, Jaipur PROFESSOR JAIKRISHNA AND PROFESSOR S.N. MITRA MEMORIAL AWARD LECTURES INDIAN NATIONAL ACADEMY OF ENGINEERING April 2018 Award Lecture Series of Indian National Academy of Engineering EDITORIAL The Indian National Academy of Engineering (INAE) functions as an apex body that promotes the practice of engineering and technology in solving problems of national importance. Its activities include formulation of technology policies, promotion of quality engineering education, and encouraging R&D activities. With an objective to promote engineering excellence INAE has instituted Professor Jai Krishna and Professor S N Mitra memorial awards. -
The Mechanism Behind the Calcium Aluminum Silicide Ternary Structural Preference and the Origin of Its Semimetal Behavior
THE MECHANISM BEHIND THE CALCIUM ALUMINUM SILICIDE TERNARY STRUCTURAL PREFERENCE AND THE ORIGIN OF ITS SEMIMETAL BEHAVIOR by Torey Elizabeth Semi A thesis submitted to the Faculty and the Board of Trustees of the Colorado School of Mines in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Applied Physics). Golden, Colorado Date Signed: Torey Elizabeth Semi Signed: D.M. Wood Thesis Advisor Golden, Colorado Date Signed: Dr. Thomas Furtak Professor and Head Department of Engineering ii ABSTRACT CaAl2Si2 is the prototype of the CaAl2Si2 class of Zintl structures established to be useful as thermoelectrics. We propose that CaAl2Si2 be interpreted as an ordinary covalently bonded, tetrahedrally coordinated quasi-semiconductor consisting of a large distortion of the wurtzite structure with the almost fully ionized Ca inserted at an interstitial site. We support this interpretation via a structural mapping and calculations for both a charged binary primitive cell and a Si4 primitive cell. Our intent is to explain the unusual structure of the CaAl2Si2 class of semiconductors, the origin of its semimetallic behavior, the basis for its stability and the effect of substituting other column II atoms for Ca on these properties. To be clear, this work does not examine the nature of the true band gap, or the transport coefficients of CaAl2Si2. GW corrections are not discussed, in view of the focus on the origins of stability of this peculiar structure. iii TABLE OF CONTENTS ABSTRACT . iii LIST OF FIGURES . vi LIST OF TABLES . xi ACKNOWLEDGMENTS . xii CHAPTER 1 INTRODUCTION . 1 1.1 Thermoelectric Materials . 2 1.2 Thermoelectric Efficiency . -
Nuclear Security Governance in India: Institutions, Instruments, and Culture
SANDIA REPORT SAND2015-0233 Unlimited Release Printed January 2015 Nuclear Security Governance in India: Institutions, Instruments, and Culture Sitakanta Mishra Happymon Jacob Research Fellow Assistant Professor Centre for Air Power Studies School of International Studies New Delhi, India Jawaharlal Nehru University New Delhi, India Prepared by Cooperative Monitoring Center Sandia National Laboratories Albuquerque, New Mexico - 87185 and Livermore, California - 94550 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE- AC04-94AL85000. 1 Issued by Sandia National Laboratories, operated for the United States Department of Energy by Sandia Corporation. NOTICE: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government, nor any agency thereof, nor any of their employees, nor any of their contractors, subcontractors, or their employees, make any warranty, express or implied, or assume any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represent that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government, any agency thereof, or any of their contractors or subcontractors. The views and opinions expressed herein do not necessarily state or reflect those of the United States Government, any agency thereof, or any of their contractors.