Fabrication of Micro/Nanoelectrode Using Focused-Ion-Beam Chemical Vapor Deposition, and Its Application to Micro-ECDM

Total Page:16

File Type:pdf, Size:1020Kb

Fabrication of Micro/Nanoelectrode Using Focused-Ion-Beam Chemical Vapor Deposition, and Its Application to Micro-ECDM Available online at www.sciencedirect.com ScienceDirect Procedia CIRP 42 ( 2016 ) 733 – 736 18th CIRP Conference on Electro Physical and Chemical Machining (ISEM XVIII) Fabrication of micro/nanoelectrode using focused-ion-beam chemical vapor deposition, and its application to micro-ECDM a a, a a b a Dengji Guo , Xiaoyu Wu * , Jianguo Lei , Bin Xu , Reo Kometani and Feng Luo aShenzhen Key Laboratory of Advanced Manufacturing Technology for Mould & Die, Shenzhen University, Shenzhen 518060, Guangdong, PR China bGraduate School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan * Corresponding author. Tel.: +86-755-2653-1066; fax: +86-755-2655-7471. E-mail address: [email protected] Abstract Micro electro-chemical discharge machining (micro-ECDM) is a key technology in the precision manufacturing. The electrode, which is the key element for achieving a high-precision ECDM, attracts the interests of many researchers. However, regarding the fabrication techniques of the electrode, the achievable precisions are still resting on micrometer scale, the processes are not simple, or electrodes with high complex three-dimensional (3D) shapes are difficult to be obtained. Basing on such a background, in this work, focused-ion-beam chemical vapor deposition (FIB-CVD) which is an effective tool in fabricating 3D micro/nanostructure for achieving various micro/nanoelectromechanical devices (MEMS/NEMS), was first time introduced to fabricate micro/nanoelectrode and furthermore ECDM processes using FIB-CVD- fabricated electrodes could be attempted. Differing to the conventional metallic electrodes, micro/nanoelectrodes in the material of amorphous platinum (Pt) were obtained. Three electrodes with the same diameter 10 Pm and height 28 Pm were fabricated on the polished tip surfaces of stainless needles, and consequently applied to micro-ECDM with varied low open voltages 10, 12.5 and 15 V. Microholes were fabricated on the 304 austenitic stainless steel. The hole diameter and the unilateral discharge gap were found to be almost linearly increasing with the increase of open voltage. In case of using the open voltage 10 V, the unilateral discharge gap was found to be 6.6 Pm. Moreover, fabrications of pillar, horn, corner, array types of 3D nanoelectrodes were demonstrated. These results indicate the potentialities of 3D micro-ECDM using complex 3D micro/nanoelectrode, and a deeper study into the science of ECDM/EDM phenomenon at submicron scale. © 20162016 The Authors. Published byby Elsevier Elsevier B.V. B.V. This is an open access article under the CC BY-NC-ND license (Peerhttp://creativecommons.org/licenses/by-nc-nd/4.0/-review under responsibility of the organizing committee). of 18th CIRP Conference on Electro Physical and Chemical Machining (ISEM PeerXVIII).-review under responsibility of the organizing committee of 18th CIRP Conference on Electro Physical and Chemical Machining (ISEM XVIII) Keywords: Micro electro-chemical discharge machining; Micro/nanoelectrode; Micro-hole; Focused-ion-beam chemical vapor deposition; Three-dimensional; 1. Introduction used for scanning probe microscopes (SPM) as electrode for micro-EDM [5]. Li and Zhao et al proposed bunched- Micro electro-chemical discharge machining (micro- electrode EDM using powerful multi-hole inner flushing, ECDM) plays an important role in the precision aiming at improving the efficiency of material removal [6]. manufacturing. The electrode, which is the necessary tool for Zeng et al combined micro-EDM and micro-ECM to mill 3D performing micro-ECDM, attracts the interests of many metallic micro-structures [7]. Xu and Wu et al proposed researchers. Masuzawa et al proposed the method of wire micro-double-staged laminated object manufacturing (micro- electro-discharge grinding (WEDG) for EDM, in which the DLOM) to fabricate 3D micro-mould, in which steel foils tool electrode is a travelling wire so that the effect of electrode were firstly cut by femtosecond laser to obtain single-layer wear can be avoided [1]. Takahata et al utilized LIGA process graphics and then welded using the method of micro-electric to fabricate high aspect ratio electrode arrays, hence batch resistance slip welding [8-10]. However, most of these mode micro-EDM could be achieved [2, 3]. Shibayama and techniques have difficulty in fabricating a micro/submicron Kunieda developed tool electrode with microholes designed electrode with high complex 3D shape in a simple process. for the flow of dielectric liquid, and applied it to sinking EDM [4]. Egashira et al used silicon probes which are originally 2212-8271 © 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). Peer-review under responsibility of the organizing committee of 18th CIRP Conference on Electro Physical and Chemical Machining (ISEM XVIII) doi: 10.1016/j.procir.2016.02.310 734 Dengji Guo et al. / Procedia CIRP 42 ( 2016 ) 733 – 736 On the other hand, in the field of micro/nanofabrication, focused-ion-beam chemical vapor deposition (FIB-CVD) was (a) proposed [11] and demonstrated to be an effective tool in fabricating various 3D nanostructures for micro/nanoelectromechanical devices (MEMS/NEMS) [12]. 20 Pm The basic principle of FIB-CVD is, under the irradiation of energetic FIB, CVD process of source gas that surrounds the substrate occurs and the deposited structure keeps grow if the irradiation of FIB lasts. By controlling the scanning of FIB via a computer pattern generator (CPG), complex 3D structure with desired shape and sizes can be achieved [13, 14]. The smallest characteristic dimension of structure created by FIB- CVD can be smaller than 100 nm. Amorphous structures in various materials such as platinum (Pt), tungsten (W) and carbon (C), can be obtained by choosing a corresponding source gas with the desired structure [15]. Aiming at establishing a novel effective fabrication technique of micro/nanoelectrode for micro-ECDM/EDM, investigating its fabrication characteristics, and supplying the possibility of the research on the ECDM phenomenon at (b) (c) submicron scale, in this paper, the micro/nanoelectrode was first time fabricated by means of FIB-CVD and micro-ECDM process using this kind of electrode was attempted. 10 Pm 2. Fabrication of microelectrode using FIB-CVD 5 Pm Fabrication of microelectrode using FIB-CVD was performed in a commercially available FIB system (FEI Corp.; 200), in which a Ga+ ion beam with an acceleration voltage of Fig. 1. Microelectrode fabricated on the polished tip surface 30 kV is equipped. A broad range of beam current from of a needle, (a) 3D, (b) side and (c) top view. picoampere (pA) to nanoampere (nA) order can be chosen. The achievable highest resolution of FIB is 5 nm. 3. ECDM process using the FIB-CVD-fabricated Microelectrode in the material of amorphous Pt was deposited microelectrodes using FIB-CVD. Normally FIB-CVD is carried out to deposit Concerning the small electrode size and the high-rate wear micro/nanostructures onto a silicon substrate, due to its vast of the electrode in EDM process, in this work, the applications related to semiconductor industry. However in microelectrode fabricated by FIB-CVD was applied to ECDM. this work, the microelectrode should be deposited onto a The ECDM was carried out on a specially-made metallic substrate, such as copper or stainless steel. Moreover, electrochemical micromachining system, as shown in Fig. 2. the electrode on the substrate is so tiny that, parallelism The system mainly consists of, between the top surface of the electrode and the workpiece surface should be strictly controlled. In order to decrease the x A three-axis motion platform with a stepper resolution of possibility of the direct contact between the substrate surface 0.2 Pm (PI, Germany; M511.DD). Unique program was and the workpiece surface, an ordinarily available needle in created using Visual C++ language on the computer to the material of stainless steel was cut and used as substrate. automatically control the motion. The tip of the needle was polished to form a horizontal neat x A pulsed power supply. High-frequency impulsing power surface, which is approximately in a shape of a disc with a source basing on FPGA was developed, with an adjustable diameter of around 70 Pm. pulse duration range and period range of 0-102 Ps and 0- Figure 1 shows the scanning electron microscope (SEM) 255 Ps, respectively. image of a cylinder-shaped microelectrode with a diameter of 10 Pm and a height of 28 Pm was fabricated on the tip surface In order to investigate the fabrication characteristic of of needle. The beam current and the fabrication time were ECDM using a microelectrode fabricated by FIB-CVD, three 3977 pA and 40 minutes 44 seconds, respectively. microelectrodes were fabricated using the same parameters that were introduced in Section 2. And they were applied to ECDM using the low open voltage 10 V, 12.5 V and 15 V, respectively. Table 1 shows the parameters of ECDM. Dengji Guo et al. / Procedia CIRP 42 ( 2016 ) 733 – 736 735 50 Pm Fig. 3. Micro-hole fabricated on the polished surface of 304 austenitic stainless steel using the open voltage of 15 V. 60 60 Hole diameter gap ( discharge Unilateral 50 Unilateral discharge gap 50 m) P 40 40 30 30 Fig. 2. Experimental setup of ECDM using microelectrode fabricated by FIB-CVD. 20 20 Hole diameter ( P Table 1. Parameters of ECDM 10 10 m) Fabrication parameters Value 0 0 Microelectrode diameter 10 Pm 10.0 12.5 15.0 Microelectrode height 28 Pm Open voltages (V) Working fluid Deionized Water Fig. 4. Open voltage dependencies of hole diameter and unilateral discharge gap. Workpiece Polished 304 austenite stainless steel 4. Fabrications of 3D nanoelectrodes using FIB-CVD Open voltage 10, 12.5, 15 V Pulse duration 800 ns By introducing FIB-CVD to the fabrication of Pulse separation 4200 ns micro/nanoelectrode for ECDM/EDM, Working depth 20 Pm Working step 0.5 Pm x Electrodes at micrometer scale or submicron scale can be easily fabricated due to the high resolution of FIB-CVD, therefore ECDM/EDM with a scale smaller than present By using different open voltages in ECDM for the may can possibly be achieved.
Recommended publications
  • Morphological Studies of Focused Ion Beam Induced Tungsten Deposition
    Morphological Studies of Focused Ion Beam Induced Tungsten Deposition H. Langfischer, S. Harasek, H. D. Wanzenboeck, B. Basnar, E. Bertagnolli, A. Lugstein Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7/1, 1040 Vienna, Austria A widely used approach to interconnect prototype circuits and to rewire defective circuits is direct writing of metal lines at the backend of the process line by Fig. 1: FIB-SEM image of an ion beam induced CVD means of focused ion beam (FIB) induced deposition. In tungsten deposit on thermal silicon dioxide. this work we investigate the focused ion beam induced chemical vapor deposition process of tungsten focusing After a contiguous tungsten layer has formed on nucleation at the early stages of the formation process, during the initial growth on the SiO2 surface, the further the formation of a contiguous interface, and finally the deposition process is characterized by homological linear growth. The study involves in situ characterization growth of tungsten on a tungsten surface and the thickness of the evolving layer surface employing FIB-secondary of deposited metal correlates linear with the total ion dose. electron microscope (FIB-SEM) imaging. For the In a further step the impact of the average current density experimental studies of the focused ion beam induced j on the deposition yield was determined using tungsten tungsten deposition, a Micrion FIB-2500 system is used films deposited on a tungsten surface. In order to give a + operating with a gallium liquid metal ion source. The Ga concise interpretation of the experimental findings a ions are extracted from a small local region of a gallium simple analytic model describing the deposition process is 2 droplet and then collimated and focused to an ion beam by used.
    [Show full text]
  • Nuclear Microprobe Application in Semiconductor Process Developments
    Scanning Microscopy Volume 6 Number 1 Article 11 1-25-1992 Nuclear Microprobe Application in Semiconductor Process Developments Mikio Takai Osaka University Follow this and additional works at: https://digitalcommons.usu.edu/microscopy Part of the Biology Commons Recommended Citation Takai, Mikio (1992) "Nuclear Microprobe Application in Semiconductor Process Developments," Scanning Microscopy: Vol. 6 : No. 1 , Article 11. Available at: https://digitalcommons.usu.edu/microscopy/vol6/iss1/11 This Article is brought to you for free and open access by the Western Dairy Center at DigitalCommons@USU. It has been accepted for inclusion in Scanning Microscopy by an authorized administrator of DigitalCommons@USU. For more information, please contact [email protected]. Scanning Microscopy, Vol. 6, No. 1, 1992 (Pages 147-156) 0891-7035/92$5.00+ .00 Scanning Microscopy International, Chicago (AMF O'Hare), IL 60666 USA NUCLEAR MICROPROBE APPLICATION IN SEMICONDUCTOR PROCESS DEVELOPMENTS Milcio Takai Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan (Received for publication May 6, 1991, and in revised form January 25, 1992) Abstract Introduction Scanning nuclear microprobes using Ion beam analysis with Rutherford Rutherford backscattering (RBS) with light ions backscattering (RBS) and channeling has been have been applied to semiconductor process steps, successfully used for device process development in which minimum feature sizes of several in the early stage of application of ion microns down to submicron and multi-layered implantation in semiconductors [30-33]. Such structures were used. Two or three dimensional studies have substantially enhanced today's CMOS RBS mapping of processed semiconductor layers (Complementary Metal Oxide Semiconductor) such as multi-layered wiring, semiconductor-on­ technology for IC's.
    [Show full text]
  • Mini RF-Driven Ion Source for Focused Ion Beam System
    Mini RF-driven ion sources for focused ion beam systems X. Jiang a), Q. Ji, A. Chang, and K. N. Leung. Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 Abstract Mini RF-driven ion sources with 1.2 cm and 1.5 cm inner chamber diameter have been developed at Lawrence Berkeley National Laboratory. Several gas species have been tested including argon, krypton and hydrogen. These mini ion sources operate in inductively coupled mode and are capable of generating high current density ion beams at tens of watts. Since the plasma potential is relatively low in the plasma chamber, these mini ion sources can function reliably without any perceptible sputtering damage. The mini RF-driven ion sources will be combined with ele ctrostatic focusing columns, and are capable of producing nano focused ion beams for micro machining and semiconductor fabrications. INTRODUCTION: Recently focused ion beam (FIB) systems have been used for circuit inspection, mask repair, micro machining, ion doping, and direct resistless writing. Most FIB systems employ a liquid metal ion source (LMIS). LMIS has a very low current yield and very high angular divergence. The gallium ion generated by liquid metal ion source can cause contamination in many FIB applications. For example, when LMIS is used for sputtering of copper, a Cu3Ga phase alloy can be formed, which is particularly resistant to milling and contributes to the uneven profiles [1]. L. Scipioni and coworkers[2] have demonstrated that when gallium ion beam is used for photo mask repair, implanted gallium ions can absorb 73% of incident 248 and 193 nm ultraviolet light.
    [Show full text]
  • Investigation of Ion Beam Techniques for the Analysis and Exposure of Particles Encapsulated by Silica Aerogel: Applicability for Stardust
    Meteoritics & Planetary Science 39, Nr 9, 1461–1473 (2004) Abstract available online at http://meteoritics.org Investigation of ion beam techniques for the analysis and exposure of particles encapsulated by silica aerogel: Applicability for Stardust G. A. GRAHAM,1, 5*# P. G. GRANT,2# R. J. CHATER,3 A. J. WESTPHAL,4# A. T. KEARSLEY,5 C. SNEAD,4# G. DOMÍNGUEZ,4# A. L. BUTTERWORTH,4# D. S. MCPHAIL,3 G. BENCH,2# and J. P. BRADLEY1# 1Institute of Geophysics and Planetary Physics, Lawrence Livermore National Laboratory, Livermore, California 94551, USA 2Center for Accelerator Mass Spectrometry, Lawrence Livermore National Laboratory, Livermore, California 94551, USA 3Department of Materials, Imperial College, London, SW7 2AZ, UK 4Space Sciences Laboratory, University of California at Berkeley, Berkeley, California 94720, USA 5Department of Mineralogy, The Natural History Museum, London, SW7 5BD, UK #Member of BayPAC (Bay Area Particle Analysis Consortium) *Corresponding author. E-mail: [email protected] (Received 19 September 2003; revision accepted 25 June 2004) Abstract–In 2006, the Stardust spacecraft will return to Earth with cometary and perhaps interstellar dust particles embedded in silica aerogel collectors for analysis in terrestrial laboratories. These particles will be the first sample return from a solid planetary body since the Apollo missions. In preparation for the return, analogue particles were implanted into a keystone of silica aerogel that had been extracted from bulk silica aerogel using the optical technique described in Westphal et al. (2004). These particles were subsequently analyzed using analytical techniques associated with the use of a nuclear microprobe. The particles have been analyzed using: a) scanning transmission ion microscopy (STIM) that enables quantitative density imaging; b) proton elastic scattering analysis (PESA) and proton backscattering (PBS) for the detection of light elements including hydrogen; and c) proton-induced X-ray emission (PIXE) for elements with Z >11.
    [Show full text]
  • Focused-Ion-Beam Induced Deposition of Tungsten Nanoscale
    Nanotechnology 25 105301 (2012) dx.doi.org/10.1088/0957-4484/23/10/105301 Felling of Individual Freestanding Nanoobjects Using Focused-ion-beam Milling for Investigations of Structural and Transport Properties Wuxia Li,1. 2 J.C. Fenton,2 Ajuan Cui,1 Huan Wang,2 Yiqian Wang,3 Changzhi Gu,1 D.W. McComb,3 and P.A. Warburton2 1Beijing National Lab of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2London Centre for Nanotechnology, University College London, London, WC1E 7JE, UK 3London Centre for Nanotechnology, Imperial College, London, SW7 2AZ, UK Email: [email protected] Short title: Felling of freestanding objects for properties investigation PACS: 81.16.-c, 87.85.Rs, 81.07.-b ABSTRACT We report that, to enable studies of their compositional, structural and electrical properties, freestanding individual nanoobjects can be selectively felled in a controllable way by the technique of low-current focused-ion-beam (FIB) milling with the ion beam at a chosen angle of incidence to the nanoobject. To demonstrate the suitability of the technique, we report results zigzag/straight tungsten nanowires grown vertically on support substrates and then felled for characterization. We also describe a systematic investigation of the effect of the experimental geometry and parameters on the felling process and on the induced wire-bending phenomenon. The method of felling freestanding nanoobjects using FIB is an advantageous new technique for enabling investigations of the properties of selected individual nanoobjects. 1. Introduction Recently, with the downscaling of electronics, nanomaterials with various shapes have been synthesized and their properties have been explored by several different methods [1-7], with a view to building novel nanodevices and new functional logic circuit architectures.
    [Show full text]
  • Focused Ion Beams (FIB) — Novel Methodologies and Recent Applications for Multidisciplinary Sciences
    Chapter 6 Focused Ion Beams (FIB) — Novel Methodologies and Recent Applications for Multidisciplinary Sciences Meltem Sezen Additional information is available at the end of the chapter http://dx.doi.org/10.5772/61634 Abstract Considered as the newest field of electron microscopy, focused ion beam (FIB) technolo‐ gies are used in many fields of science for site-specific analysis, imaging, milling, deposi‐ tion, micromachining, and manipulation. Dual-beam platforms, combining a high- resolution scanning electron microscope (HR-SEM) and an FIB column, additionally equipped with precursor-based gas injection systems (GIS), micromanipulators, and chemical analysis tools (such as energy-dispersive spectra (EDS) or wavelength-disper‐ sive spectra (WDS)), serve as multifunctional tools for direct lithography in terms of nano-machining and nano-prototyping, while advanced specimen preparation for trans‐ mission electron microscopy (TEM) can practically be carried out with ultrahigh preci‐ sion. Especially, when hard materials and material systems with hard substrates are concerned, FIB is the only technique for site-specific micro- and nanostructuring. More‐ over, FIB sectioning and sampling techniques are frequently used for revealing the struc‐ tural and morphological distribution of material systems with three-dimensional (3D) network at micro-/nanoscale.This book chapter includes many examples on conventional and novel processes of FIB technologies, ranging from analysis of semiconductors to elec‐ tron tomography-based imaging of hard materials such as nanoporous ceramics and composites. In addition, recent studies concerning the active use of dual-beam platforms are mentioned Keywords: Focused Ion Beams, Electron Microscopy, Dual-Beam Platforms, Nanostruc‐ turing, Nanoanalysis 1. Introduction The miniaturization of novel materials, structures, and systems down to the atomic scale has assigned electron microscopy, a complementary branch of nanotechnology, for multidisciplinary sciences.
    [Show full text]
  • Focused-Ion-Beam Lithography
    Feasibility Study of Spatial-Phase-Locked Focused-Ion-Beam Lithography by Anto Yasaka M.Eng., Nuclear Engineering, Tokyo Institute of Technology, 1983 B.S., Applied Physics, Tokyo Institute of Technology, 1981 Submitted to the Department of Materials Science and Engineering in partial fulfillment of the requirements for the degree of Master of Science in Materials Science and Engineering at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY June, 1995 © 1995 Massachusetts Institute of Technology. All rights reserved. Signature of Author ............... ...eJ ' ..v.. .............. ....................... Department of Marials Science and Engineering May 12, 1995 Certified by ........................................... Henry I. Smith Professor of Electrical Engineering Thesis Advisor CertifiedC ertifi ed bby........... y ......................................... .. .. A.. Carl V. Sompson II Professor of Electronic Materials Thesis Advisor Accepted by ............................................................................ Carl V. Thompson II Professor of Electronic Materials ;?.: usErrsINSTrbhair, Departmental Committee on Graduate Students OF TECHNOLOGY JUL 2 01995 Sciencp LIBRARIES Feasibility Study of Spatial-Phase-Locked Focused-Ion-Beam Lithography by Anto Yasaka Submitted to the Department of Materials Science and Engineering in partial fulfillment of the requirements for the degree of Master of Science in Materials Science and Engineering Abstract It is known that focused-ion-beam lithography has the capability of writing extremely fine lines (less than 50 nm line and space has been achieved) without proximity effect. However, because the writing field in ion-beam lithography is quite small, large- area patterns must be created by stitching together the small fields. The precision with which this can be done is much poorer than the resolution, typical stitching errors are -100 nm. A spatial-phase-locking method has been proposed to reduce stitching errors and provide both pattern placement accuracy and precision.
    [Show full text]
  • Scanning Electron Microscopy Vs Focused Ion Beam
    Scanning Electron Microscopy vs Focused Ion Beam Caitlyn Gardner Quang T. Huynh Concepts and fundamentals of Scanning Electron Microscopes Diffraction limit of light Any atoms are small than half of a wavelength of light is too small to see with light microscope Electrons have much shorter wavelength than light Secondary electrons Scattered electrons X-rays Auger electrons Specimen current Application of SEM Generate high-resolution images ( in nano-scales) Texture Chemical composition Examine microfabric and crystallography orientation in materials SEM Components Electron source (“Gun”) Electron lenses Sample Stages Detectors for all signals of interest Display/Data output devices Infrastructure requirements: Power Supply Vacuum system Cooling system Vibration-free floor Room free of ambient magnetic and electric field Structure of a SEM Figure: Typical structure of scanning electron microscope [1] Radiolarian Magnification: X 500 Magnification: X 2,000 Figure 2: Radiolarian [6] Advantages High magnification from 10 to 500,000x By 2009, the world’s highest SEM resolution is 0.4nm at 30kV Can be applied to wide range of applications in the study of solid materials Large depth of field Easy to operate with user-friendly interfaces Highly portable Safe to operate Disadvantages Sample must be solid and small enough to fit in the chamber Vacuum Some light elements can not be detected by EDS detectors Many instruments cannot detect elements with atomic numbers less than 11 Low conductivity sample must have
    [Show full text]
  • Focused Ion Beam Processing for 3D Chiral Photonics Nanostructures
    micromachines Review Focused Ion Beam Processing for 3D Chiral Photonics Nanostructures Mariachiara Manoccio 1,2,* , Marco Esposito 2,* , Adriana Passaseo 2, Massimo Cuscunà 2 and Vittorianna Tasco 2 1 Department of Mathematics and Physics Ennio De Giorgi, University of Salento, Via Arnesano, 73100 Lecce, Italy 2 CNR NANOTEC Institute of Nanotechnology, Via Monteroni, 73100 Lecce, Italy; [email protected] (A.P.); [email protected] (M.C.); [email protected] (V.T.) * Correspondence: [email protected] (M.M.); [email protected] (M.E.) Abstract: The focused ion beam (FIB) is a powerful piece of technology which has enabled scientific and technological advances in the realization and study of micro- and nano-systems in many research areas, such as nanotechnology, material science, and the microelectronic industry. Recently, its applications have been extended to the photonics field, owing to the possibility of developing systems with complex shapes, including 3D chiral shapes. Indeed, micro-/nano-structured elements with precise geometrical features at the nanoscale can be realized by FIB processing, with sizes that can be tailored in order to tune optical responses over a broad spectral region. In this review, we give an overview of recent efforts in this field which have involved FIB processing as a nanofabrication tool for photonics applications. In particular, we focus on FIB-induced deposition and FIB milling, employed to build 3D nanostructures and metasurfaces exhibiting intrinsic chirality. We describe the fabrication strategies present in the literature and the chiro-optical behavior of the developed structures. The achieved results pave the way for the creation of novel and advanced nanophotonic devices for many fields of application, ranging from polarization control to integration in photonic circuits to subwavelength imaging.
    [Show full text]
  • Sample Preparation by Focused Ion Beam Micromachining For
    Micron 56 (2014) 63–67 Contents lists available at ScienceDirect Micron j ournal homepage: www.elsevier.com/locate/micron Sample preparation by focused ion beam micromachining for transmission electron microscopy imaging in front-view a,∗ b Michael Jublot , Michael Texier a CP2M, Aix Marseille Université, av. Escadrille Normandie Niémen, F13397 Marseille, France b Aix Marseille Université, CNRS, IM2NP UMR 7334, av. Escadrille Normandie Niémen, F13397 Marseille, France a r t a b i s c l e i n f o t r a c t Article history: This article deals with the development of an original sample preparation method for transmission elec- Received 2 August 2013 tron microscopy (TEM) using focused ion beam (FIB) micromachining. The described method rests on Received in revised form 9 October 2013 the use of a removable protective shield to prevent the damaging of the sample surface during the FIB Accepted 9 October 2013 lamellae micromachining. It enables the production of thin TEM specimens that are suitable for plan view TEM imaging and analysis of the sample surface, without the deposition of a capping layer. This method Keywords: is applied to an indented silicon carbide sample for which TEM analyses are presented to illustrate the TEM potentiality of this sample preparation method. FIB Damaging © 2013 Elsevier Ltd. All rights reserved. Lamella Front-view 1. Introduction sizes and orientations in textured films, the characterization of compositional or structural homogeneities at the sample surface, Analyses by transmission electron microscopy (TEM) are per- or the study of elementary plastic deformation events produced formed on thin specimens transparent to electrons.
    [Show full text]
  • Focused Ion Beam and Scanning Electron Microscopy for 3D Materials Characterization Paul G
    MRS Bulletin Formatted w/Refs Kotula/Apr14 Focused ion beam and scanning electron microscopy for 3D materials characterization Paul G. Kotula, Gregory S. Rohrer, and Michael P. Marsh In this article, we review focused ion beam serial sectioning microscopy paired with analytical techniques, such as electron backscatter diffraction or x-ray energy-dispersive x-ray spectrometry, to study materials chemistry and structure in three dimensions. These three-dimensional microanalytical approaches have been greatly extended due to advances in software for both microscope control and data interpretation. Samples imaged with these techniques reveal structural features of materials that can be quantitatively characterized with rich chemical and crystallographic detail. We review these technological advances and the application areas that are benefitting. We also consider the challenges that remain for data collection, data processing, and visualization, which collectively limit the scale of these investigations. Further, we discuss recent innovations in quantitative analyses and numerical modeling that are being applied to microstructures illuminated by these techniques. Taxonomy: scanning electron microscopy (SEM); chemical composition; crystallographic structure; ion solid interactions. Introduction A focused ion beam (FIB) system coupled with a scanning electron microscope (SEM) on the same platform, often referred to as an FIB-SEM microscope, is a powerful combination for 3D microstructural analysis. The FIB is used serially to remove layers of material, while the electron beam is used to illuminate the freshly exposed surface. While early FIB-SEM imaging yielded 3D data stacks from measured electron signals (secondary electron or backscattered electron), more recent developments have integrated diffraction and x-ray spectroscopy with 3D FIB-SEM imaging.
    [Show full text]
  • Single Digit Nm Circuit Edit
    WHITE PAPER Circuit Edit Focused Ion Beam (CE-FIB) Becomes Increasingly Valuable in High-Stakes World of Advanced Node Design Integrated circuit (IC) designers continuing to lean on the CE FIB have several uses in the semiconductor industry, difficult if not technique without compromising performance. The technique impossible, to anticipate based on previous design nodes. Pre- used on older process nodes is proving even more valuable at 20 silicon testing is used to check layouts of metal connections within nm and smaller nodes. Finally, the benefits of CE FIB to correct a chip (see Fig. 1). Simulation times are growing excessive, and layout issues and test design changes before making such changes many designs simply cannot be 100 percent verified without has increased as doing a respin during development of devices at physical samples. Simulation models may be imperfect for advanced nodes takes $10 million or more to bring such a device complex designs and packaging can cause stresses to sensitive to market. devices. The need to verify the final product and make changes to Similar challenges face designers of power control ICs that need improve/fix designs will remain in play. to reduce costs, optimize performance, and combine control Challenges in this environment range from multiple patterning and with power FET functionality. In these designs the functionality, layout dependent effects (LDE) to the use of local interconnect mitigation of risk, and speeding time to market for designs, will layers. Design and integration complexity give rise to a new level require FIB circuit edit techniques at increased rates. of difficulty with each new technology node.
    [Show full text]