5G Is on – Which Impact for RFSOI Technologies ?

From Technologies to Markets

5G is ON – Which impact for RFSOI technologies ?

RFSOI workshop Shanghai Cédric Malaquin

5G has kicked off worldwide. Network and compatible devices available.

1000+ 5G networks

source: Ookla, as of September 19

5G network capacity and/or latency capability enables immersive use- cases for consumers and secures challenging scenario for LTE

source: GSMA

Mobile data 5 fold increase traffic has exponentially increased while telecom expense is continuously decreasing. 5G is enabling a better usage of radio resources

Telecom spends as proportion of GDP Source: ETNO

source: Ericsson Mobility report 2018, modified by Yole

Multiple Input Multiple Output

width1 width2 width1+width2

Carrier aggregation f1 f2

MIMO and CA More spectrum (5G NR) f are the main 0 technology width0 supporting network 푚 푆 capacity and 퐶 = . 퐵푊. 푙표푔2(1 + ) coverage 푛 푁 + 1 improvement. source: 5GAmerica 5G NR will High order of modulation bring more spectrum

Network densification

mmW AiP Dual connectivity Even more bands Carrier aggregation Each cellular 4x4 MIMO generation, RF content in

mobile has relative scale relative increased - Even more bands following the Carrier aggregation introduction 4x4 MIMO of new In Japan technologies content RF

More bands

Diversity path

Total 300 MHz 600 MHz 2 GHz 7.4 GHz bandwidth 39 GHz 5G NR N257 mm N258 N260 Wave N261

New spectrum in 6 GHz 5G NR N77, N78, N79 the 3-6 GHz range as well as in the UHB mmwave range (28, 39 GHz) 3 GHz New spectrum 5G NR N84 (SUL) below 3 GHz is for supplementary up- HB 5G re-farming N1, N66, N40, N7, N38, N41 link feature, while band refarming will LTE happen gradually 2 GHz 5G NR N80, N86 (SUL)

MB 5G re-farming N3, N2, N25, N39, N34, N70, N80 LTE 1.5 GHz 5G NR N81, N82, N83 (SUL) 5G NR LB 5G re-farming N71, N12, N28, N20, N5, N8 5G re-farming LTE 0.6 GHz 5G’s Impact on RF Front-End Module and Connectivity for Cell phones 2019 | Report | www.yole.fr | ©2019 7 RF FRONT-END ARCHITECTURE IN MOBILE What is 5G’s impact? LTE 5G

Enveloppe Tracker

5G baseband LNA Filter modem PA Filter PMIC 5G PAM UHB mmWave AiP

5G increases RF 3G/LTE/5G PAM MHB Tuner content in mobile LTE Baseband Modem phones due to 3G/LTE/5G PAM LB new bands and Multiplexer Tuner MIMO. CA Transceiver 2G PAM The complexity

further increase Tuner 4x4 MIMO DL MIMO 4x4 with dual Antennaplexer MIMO connectivity Filter LNA Filter Tuner Filter GPS module Diversity receive LNA Filter May be shared Wi-Fi/BT module Diversity receive Diversity receive

Diversity receive Diversity receive 2x2 MIMO DL MIMO 2x2 Diversity receive

May be integrated/shared

In case of an integrated architecture 5G’s Impact on RF Front-End Module and Connectivity for Cell phones 2019 | Report | www.yole.fr | ©2019 8 RF FRONT END IMPLEMENTATION IN MOBILE RF SiP Module or RF discrete. The choice belong to the OEM.

Galaxy S10+ RF board Huawei P20 Pro RF board Majority of RF SiP modules Majority of discrete parts

Market segment is not the only clue. Even high end phone can utilize a wide variety of discrete part.

Discrete part (single die) Module (RF SiP)

Apple and Samsung high-end and luxury phones are highly integrated, which is not the case for Huawei’s models. Oppo, Vivo, and Xiaomi are not much integrated either. These four brands, driving as much volume as Apple and Samsung, will favor a discrete approach for continued growth.

0% 25% 50% 75% 100% Discrete Integration scale Integrated 5G’s Impact on RF Front-End Module and Connectivity for Cell phones 2019 | Report | www.yole.fr | ©2019 10 TEARDOWN SAMPLE, PER MOBILE PHONE SEGMENT An extensive teardown analysis

An extensive cellphone teardown has been conducted by our sister Samsung S10 Huawei Nova4 Oppo F5 company, SystemPlus iPhone XS Consulting. This teardown analysis was based on the four defined smartphone segments, allowing us to precisely investigate the entry- level phone architectures where discrete components Huawei P20 Vivo NEX Samsung A9 Xiaomi Mi8 are favored for cost reasons.

Die area per function (mm²) RF SiP PAMiD example

Addressable market for RFSOI technologies extend from antenna tuners and switches, down to the LNA. HPUE requirements of SiP : System in Package LTE and 5G make PAMiD : Power Amplifier Module PA a difficult Addressable with RFSOI with Integrated Duplexer segment for RFSOI When integrated, a multichip Approach (SiP) prevail over a SoC approach.

Die area per function (mm²)

RRH : Remote Radio Head AAS : Active Antenna System

5G’s Impact on RF Front-End Module and Connectivity for Cell phones 2019 | Report | www.yole.fr | ©2019 13 RF FRONT-END & CONNECTIVITY MARKET - FORECAST By component type TAM modules and RF components for front-end & connectivity PA module Receive module 2025 Wi-Fi & connectivity module AiP module $25,844M Discrete filter, duplexer, etc. CAGR +8% The RF module Discrete switch & LNA $10,420M market 2018 CAGR +8% represented 70% Tuner of TAM in 2018. $15,001M By 2025, we expect almost the same $3,096M proportion, since CAGR +6% $2,898M the RF discrete $5,958M CAGR 2% market will $1,332M remain strong thanks to CAGR +68% demand from $2,015M Chinese OEMs. $2,500M $1,225M $1,734M CAGR +13% CAGR +9% $5,140M CAGR 8% $925M $3,088M $514M

4x4 MIMO DL 5G will drive RF switch as well as antenna tuner volume. AiP introduction in mobile phone is heavily linked to carrier and OEM strategy

90% of volume manufactured with RFSOI CMOS technology platform largely driven by Infineon, pHEMT by IDM & GaAs foundries, MEMS by Cavendish Kinetics. PTIC tuners growth to benefit to ST Microelectronics and On Semi

Demand for 8 inches RF SOI will keep growing, while 12” RF SOI will ramp up due to integrated switch/LNA demand. Significant Silicon wafer start will remain to support both RF CMOS and SiGe technologies

RF component stage RF filter Diplexer/multiplexer OSAT services

Front-end module stage

RF switch Handset device stage Discrete components Integrated modules

LNA

Antenna tuner

5G modem

Non exhaustive list of companies Murata, Skyworks, Broadcom, Qorvo and Qualcomm to TAM 2018* lead the RF Front $15B End space. Fierce * Direct sales to OEM only competition with Chinese company entering the top 10

AiP Top Transceiver mmWave AiP AiP Bottom device Patch antenna commercially available. Technology platform still Picture of QTM052 3D X-ray of QTM052 open Transceiver built in CMOS 28nm - No additional PA PA efficiency is a question mark: heat dissipation, battery drain Required Output power of at least 20 dBm

Could RFSOI or FDSOI enter the mmWave segment ? Other possible technology platform could also be GaAs pHEMT or GaN/Silicon

Competing technologies Bulk CMOS, SiGe, GaN/Si, pHEMT GaAs and RF SiP Current Leading technology Potential future opportunities RFSOI technology technologies extension continue to spread across the Front End with integrated mmWave LNA/Switches and IPDs. transceivers Further opportunities to Sub 6 GHz FEM be explored for (PA/LNA/Switches) RFSOI to compete integrated Front End LNA/Switches with existing technologies IPD Switches Antenna tuner Power limitation May be restricted to WiFi

22 YOLE DEVELOPPEMENT – FIELDS OF EXPERTISE

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23 CONTACT

For further information, please contact

Cédric Malaquin – Technology and Market Analyst [email protected]

Mavis Wang – Sales Greater China [email protected]

@2019 | www.yole.fr | Compound Semi. Market Monitor | Q3 2019 24