Design for Manufacturability and Reliability in Extreme-Scaling VLSI
SCIENCE CHINA Information Sciences . REVIEW . June 2016, Vol. 59 061406:1–061406:23 Special Focus on Advanced Microelectronics Technology doi: 10.1007/s11432-016-5560-6 Design for manufacturability and reliability in extreme-scaling VLSI Bei YU1,2 , Xiaoqing XU2 , Subhendu ROY2,3 ,YiboLIN2, Jiaojiao OU2 &DavidZ.PAN2 * 1CSE Department, The Chinese University of Hong Kong, NT Hong Kong, China; 2ECE Department, University of Texas at Austin, Austin, TX 78712,USA; 3Cadence Design Systems, Inc., San Jose, CA 95134,USA Received December 14, 2015; accepted January 18, 2016; published online May 6, 2016 Abstract In the last five decades, the number of transistors on a chip has increased exponentially in accordance with the Moore’s law, and the semiconductor industry has followed this law as long-term planning and targeting for research and development. However, as the transistor feature size is further shrunk to sub-14nm nanometer regime, modern integrated circuit (IC) designs are challenged by exacerbated manufacturability and reliability issues. To overcome these grand challenges, full-chip modeling and physical design tools are imperative to achieve high manufacturability and reliability. In this paper, we will discuss some key process technology and VLSI design co-optimization issues in nanometer VLSI. Keywords design for manufacturability, design for reliability, VLSI CAD Citation Yu B, Xu X Q, Roy S, et al. Design for manufacturability and reliability in extreme-scaling VLSI. Sci China Inf Sci, 2016, 59(6): 061406, doi: 10.1007/s11432-016-5560-6 1 Introduction Moore’s law, which is named after Intel co-founder Gordon Moore, predicts that the density of transistor on integrated circuits (ICs) roughly doubles every two years.
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