Polymeric Nanocomposite Membranes with Phosphorene Based Pore Fillers for Fouling Control
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Electronic Structure of Graphene– and BN–Supported Phosphorene
This document is downloaded from DR‑NTU (https://dr.ntu.edu.sg) Nanyang Technological University, Singapore. Electronic structure of graphene– and BN–supported phosphorene Kistanov, Andrey A.; Saadatmand, Danial; Dmitriev, Sergey V.; Zhou, Kun; Korznikova, Elena A.; Davletshin, Artur R.; Ustiuzhanina, Svetlana V. 2018 Davletshin, A. R., Ustiuzhanina, S. V., Kistanov, A. A., Saadatmand, D., Dmitriev, S. V., Zhou, K., & Korznikova, E. A. (2018). Electronic structure of graphene– and BN–supported phosphorene. Physica B: Condensed Matter, 534, 63‑67. doi:10.1016/j.physb.2018.01.039 https://hdl.handle.net/10356/90092 https://doi.org/10.1016/j.physb.2018.01.039 © 2018 Elsevier B.V. All rights reserved. This paper was published in Physica B: Condensed Matter and is made available with permission of Elsevier B.V. Downloaded on 02 Oct 2021 11:03:45 SGT Electronic structure of graphene– and BN–supported phosphorene Artur R. Davletshin1, Svetlana V. Ustiuzhanina2, *Andrey A. Kistanov2, 3 , 4, Danial Saadatmand5, Sergey V. Dmitriev2, 6, Kun Zhou3 and Elena A. Korznikova2 1Ufa State Petroleum Technological University, Ufa 450000, Russia 2Institute for Metals Superplasticity Problems, Russian Academy of Sciences, Ufa 450001, Russia 3School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore 4Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore 138632, Singapore 5Department of Physics, University of Sistan and Baluchestan, Zahedan, Iran 6National Research Tomsk State University, Tomsk 634050, Russia Abstract By using first–principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene–supported phosphorene is found to be metallic, while the BN–supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV. -
Technology and Applications of 2D Materials in Micro- and Macroscale Electronics
Technology and Applications of 2D Materials in Micro- and Macroscale Electronics by Marek Hempel B.S., RWTH Aachen University (2010) M.S., RWTH Aachen University (2013) Submitted to the Department of Electrical Engineering and Computer Science in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY May 2020 © Massachusetts Institute of Technology 2020. All rights reserved. Author ……………………………………………………………………………………………………………………………………………………… Department of Electrical Engineering and Computer Science May 15, 2020 Certified by ………………………………………………………………………………………………………………………………………………. Tomás Palacios Professor of Electrical Engineering and Computer Science Thesis Supervisor Certified by ………………………………………………………………………………………………………………………………………………. Jing Kong Professor of Electrical Engineering and Computer Science Thesis Supervisor Accepted by ……………………………………………………………………………………………………………………………………………… Leslie A. Kolodziejski Professor of Electrical Engineering and Computer Science Chair, Department Committee on Graduate Students 1 2 Technology and Applications of 2D-Materials in Micro- and Macroscale Electronics by Marek Hempel Submitted to the Department of Electrical Engineering and Computer Science on May 15, 2020, in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Abstract: Over the past 50 years, electronics has truly revolutionized our lives. Today, many everyday objects rely on electronic circuitry from gadgets such as wireless earbuds, smartphones and -
Fractionation of Proteins with Two-Sided Electro-Ultrafiltration
Journal of Biotechnology 128 (2007) 895–907 Fractionation of proteins with two-sided electro-ultrafiltration Tobias Kappler¨ ∗, Clemens Posten University of Karlsruhe, Institute of Engineering in Life Sciences, Division Bioprocess Engineering, Kaiserstr. 12, Geb. 30.70, 76128 Karlsruhe, Germany Received 7 June 2006; received in revised form 22 December 2006; accepted 2 January 2007 Abstract Downstream processing is a major challenge in bioprocess industry due to the high complexity of bio-suspensions itself, the low concentration of the product and the stress sensitivity of the valuable target molecules. A multitude of unit operations have to be joined together to achieve an acceptable purity and concentration of the product. Since each of the unit operations leads to a certain product loss, one important aim in downstream-research is the combination of different separation principles into one unit operation. In the current work a dead-end membrane process is combined with an electrophoresis operation. In the past this concept has proven successfully for the concentration of biopolymers. The present work shows that using different ultrafiltration membranes in a two-sided electro-filter apparatus with flushed electrodes brought significant enhancement of the protein fractionation process. Due to electrophoretic effects, the filtration velocity could be kept on a very high level for a long time, furthermore, the selectivity of a binary separation process carried out exemplarily for bovine serum albumin (BSA) and lysozyme (LZ) could be greatly increased; in the current case up to a value of more than 800. Thus the new two-sided electro-ultrafiltration technique achieves both high product purity and short separation times. -
Arxiv:1407.5880V3 [Cond-Mat.Mes-Hall] 14 Aug 2014
Oxygen defects in phosphorene A. Ziletti,1 A. Carvalho,2 D. K. Campbell,3 D. F. Coker,1, 4 and A. H. Castro Neto2, 3 1Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA 2Graphene Research Centre and Department of Physics, National University of Singapore, 117542, Singapore 3Department of Physics, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA 4Freiburg Institute for Advanced Studies (FRIAS), University of Freiburg, D-79104, Freiburg, Germany Surface reactions with oxygen are a fundamental cause of the degradation of phosphorene. Using first-principles calculations, we show that for each oxygen atom adsorbed onto phosphorene there is an energy release of about 2 eV. Although the most stable oxygen adsorbed forms are electrically inactive and lead only to minor distortions of the lattice, there are low energy metastable forms which introduce deep donor and/or acceptor levels in the gap. We also propose a mechanism for phosphorene oxidation and we suggest that dangling oxygen atoms increase the hydrophilicity of phosphorene. PACS numbers: 73.20.At,73.20.Hb Phosphorene, a single layer of black phosphorus[1, 2], phosphorene is exoenergetic and leads to the formation of has revealed extraordinary functional properties which neutral defects, as well as to metastable electrically active make it a promising material not only for exploring novel defect forms. We also discuss the conditions necessary for physical phenomena but also for practical applications. extensive oxidation and propose strategies to control it. In contrast to graphene, which is a semi-metal, phospho- Oxygen defects were modeled using first-principles cal- rene is a semiconductor with a quasiparticle band gap of 2 culations based on density functional theory (DFT), as eV. -
Removal of Waterborne Particles by Electrofiltration: Pilot-Scale Testing
ENVIRONMENTAL ENGINEERING SCIENCE Volume 26, Number 12, 2009 ª Mary Ann Liebert, Inc. DOI: 10.1089=ees.2009.0238 Removal of Waterborne Particles by Electrofiltration: Pilot-Scale Testing Ying Li,1 Ray Ehrhard,1 Pratim Biswas,1,* Pramod Kulkarni,2 Keith Carns,3 Craig Patterson,4 Radha Krishnan,5 and Rajib Sinha5 1Department of Energy, Environmental and Chemical Engineering, Washington University in St. Louis, St. Louis, Missouri. 2Center for Disease Control and Prevention, National Institute for Occupational Safety and Health, Cincinnati, Ohio. 3Global Energy Partners, LLC, Oakhurst, California. 4Office of Research and Development, National Risk Management Research Laboratory, U.S. Environmental Protection Agency, Cincinnati, Ohio. 5Shaw Environmental and Infrastructure, Inc., Cincinnati, Ohio. Received: July 6, 2009 Accepted in revised form: October 20, 2009 Abstract Theoretical analysis using a trajectory approach indicated that in the presence of an external electric field, charged waterborne particles are subject to an additional migration velocity that increases their deposition on the surface of collectors (e.g., sand filter). Although researchers conducted bench-scale experiments to verify the effectiveness of electrofiltration, few studies have reported on the applications of electrofiltration in larger scale facilities. In this study, a prototype pilot-scale electrofiltration unit, consisting of an acrylic tank (0.3Â0.3Â1.2 m) with vertically placed stainless steel mesh electrodes embedded in a sand filter was tested at a local drinking water plant. Presedimentation basin water was used as the influent with a turbidity ranging from 12 to 37 NTU. At an approach velocity of 0.84 mm=s, an electrode voltage at 8 and 12 V increased the particle removal coefficient pC* [defined as Àlog(Cout=Cin)] to 1.79 and 1.86, respectively, compared to 1.48 when there was no electric field. -
Reconfigurable Polarizer Based on Bulk Dirac Semimetal Metasurface
crystals Article Reconfigurable Polarizer Based on Bulk Dirac Semimetal Metasurface Yannan Jiang, Jing Zhao and Jiao Wang * Guangxi Key Laboratory of Wireless Wideband Communication & Signal Processing, Guilin 541000, China; [email protected] (Y.J.); [email protected] (J.Z.) * Correspondence: [email protected] Received: 22 February 2020; Accepted: 16 March 2020; Published: 21 March 2020 Abstract: In this paper, we propose a reflective polarizer in terahertz regime, which utilizes the Bulk-Dirac-Semimetal (BDS) metasurface can be dynamically tuned in broadband. The proposed polarizer is capable of converting the linear polarized wave into the circular polarized or the cross polarized waves by adjusting the Fermi energy (EF) of the BDS. In the frequency range of 0.51 THz and 1.06 THz, the incident linear polarized wave is converted into a circular polarized wave with an axial ratio (AR) less than 3 dB when EF = 30 meV. When EF = 45 meV, the cross-polarization conversion is achieved with the polarization conversion ratio (PCR) greater than 90% in the band of 0.57 1.12 THz. Meanwhile, the conversion efficiencies for both polarization conversions are in − excess of 90%. Finally, the physical mechanism is revealed by the decomposition of two orthogonal components and the verification is presented by the interference theory. Keywords: reconfigurable polarizer; tunable metasurface; broadband; Bulk-Dirac-Semimetal 1. Introduction In recent years, terahertz (THz) technology has developed rapidly in many fields, such as sensing [1], imaging [2] and radar [3] because terahertz waves have very low photon energy, strong penetrability, and obvious characteristic absorption peaks, making terahertz technology show significant research value and great prospects in material detection, security inspection, military, and wireless communications. -
An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu Purdue University, Birck Nanotechnology Center, [email protected]
Purdue University Purdue e-Pubs Birck and NCN Publications Birck Nanotechnology Center 4-2014 Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu Purdue University, Birck Nanotechnology Center, [email protected] Adam T. Neal Purdue University, Birck Nanotechnology Center, [email protected] Zhen Zhu Michigan State University Xianfan Xu Purdue University, Birck Nanotechnology Center, [email protected] David Tomanek Michigan State University See next page for additional authors Follow this and additional works at: http://docs.lib.purdue.edu/nanopub Part of the Nanoscience and Nanotechnology Commons Liu, Han; Neal, Adam T.; Zhu, Zhen; Xu, Xianfan; Tomanek, David; Ye, Peide D.; and Luo, Zhe, "Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility" (2014). Birck and NCN Publications. Paper 1584. http://dx.doi.org/10.1021/nn501226z This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. Authors Han Liu, Adam T. Neal, Zhen Zhu, Xianfan Xu, David Tomanek, Peide D. Ye, and Zhe Luo This article is available at Purdue e-Pubs: http://docs.lib.purdue.edu/nanopub/1584 ARTICLE Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu,†,‡ Adam T. Neal,†,‡ Zhen Zhu,§ Zhe Luo,‡,^ Xianfan Xu,‡,^ David Toma´ nek,§ and Peide D. Ye†,‡,* †School of Electrical and Computer Engineering and ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States, §Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States, and ^School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States ABSTRACT We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. -
Science & Technology Trends 2020-2040
Science & Technology Trends 2020-2040 Exploring the S&T Edge NATO Science & Technology Organization DISCLAIMER The research and analysis underlying this report and its conclusions were conducted by the NATO S&T Organization (STO) drawing upon the support of the Alliance’s defence S&T community, NATO Allied Command Transformation (ACT) and the NATO Communications and Information Agency (NCIA). This report does not represent the official opinion or position of NATO or individual governments, but provides considered advice to NATO and Nations’ leadership on significant S&T issues. D.F. Reding J. Eaton NATO Science & Technology Organization Office of the Chief Scientist NATO Headquarters B-1110 Brussels Belgium http:\www.sto.nato.int Distributed free of charge for informational purposes; hard copies may be obtained on request, subject to availability from the NATO Office of the Chief Scientist. The sale and reproduction of this report for commercial purposes is prohibited. Extracts may be used for bona fide educational and informational purposes subject to attribution to the NATO S&T Organization. Unless otherwise credited all non-original graphics are used under Creative Commons licensing (for original sources see https://commons.wikimedia.org and https://www.pxfuel.com/). All icon-based graphics are derived from Microsoft® Office and are used royalty-free. Copyright © NATO Science & Technology Organization, 2020 First published, March 2020 Foreword As the world Science & Tech- changes, so does nology Trends: our Alliance. 2020-2040 pro- NATO adapts. vides an assess- We continue to ment of the im- work together as pact of S&T ad- a community of vances over the like-minded na- next 20 years tions, seeking to on the Alliance. -
Modulation of Phosphorene for Optimal Hydrogen Evolution Reaction
Research Article Cite This: ACS Appl. Mater. Interfaces 2019, 11, 37787−37795 www.acsami.org Modulation of Phosphorene for Optimal Hydrogen Evolution Reaction † † † † † ‡ † § Jiang Lu, Xue Zhang, Danni Liu, Na Yang, Hao Huang, Shaowei Jin, Jiahong Wang,*, , § † Paul K. Chu, and Xue-Feng Yu † Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China ‡ National Supercomputing Center, Shenzhen, Guangdong 518055, P. R. China § Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China *S Supporting Information ABSTRACT: Economical and highly effective catalysts are crucial to the electrocatalytic hydrogen evolution reaction (HER), and few-layer black phosphorus (phosphorene) is a promising candidate because of the high carrier mobility, large specific surface area, and tunable physicochemical characteristics. However, the HER activity of phosphorene is limited by the weak hydrogen adsorption ability on the basal plane. In this work, optimal active sites are created to modulate the electronic structure of phosphorene to improve the HER activity and the effectiveness is investigated theoretically by density-functional theory calculation and verified experimentally. The edges and defects affect the electronic density of states, and a linear relationship between the HER activity and lowest unoccupied states ε ε ( LUS) is discovered. The medium LUS value corresponds to the suitable hydrogen adsorption strength. Experiments are designed and performed to verify the prediction, and our results show that a smaller phosphorene moiety with more edges and defects exhibits better HER activity and surface doping with metal adatoms improves the catalytic performance. -
Covalent Functionalized Black Phosphorus Quantum Dots
Covalent Functionalized Black Phosphorus Quantum Dots Francesco Scotognella1,2,*, Ilka Kriegel3,4, Simone Sassolini4 1Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy 2Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133, Milan, Italy 3Department of Nanochemistry, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Italy 4Molecular Foundry, Lawrence Berkeley National Lab, One Cyclotron Rd, Berkeley, CA 94720, USA *email address: [email protected] Abstract Black phosphorus (BP) nanostructures enable a new strategy to tune the electronic and optical properties of this atomically thin material. In this paper we show, via density functional theory calculations, the possibility to modify the optical properties of BP quantum dots via covalent functionalization. The quantum dot selected in this study has chemical formula P24H12 and has been covalent functionalized with one or more benzene rings or anthracene. The effect of functionalization is highlighted in the absorption spectra, where a red shift of the absorption is noticeable. The shift can be ascribed to an electron delocalization in the black phosphorus/organic molecule nanostructure. Introduction The elemental two-dimensional analogues of graphene, i.e. germanene, phosphorene, silicene, and stanene, have emerged as a class of fascinating nanomaterials useful for optics and electronics [1–4]. Black phosphorus (BP) is particularly interesting because of its electronic band gap, which is 0.3 eV in the bulk, but that shows a layer-dependent tunability up to 2 eV [5–12]. From an optical point of view, a strong photoluminescence [8,13] and in-plane anisotropy [14] have been observed in BP. -
Recent Advances in Synthesis, Properties, and Applications of Phosphorene
www.nature.com/npj2dmaterials REVIEW ARTICLE OPEN Recent advances in synthesis, properties, and applications of phosphorene Meysam Akhtar1,2, George Anderson1, Rong Zhao1, Adel Alruqi1, Joanna E. Mroczkowska3, Gamini Sumanasekera1,2 and Jacek B. Jasinski2 Since its first fabrication by exfoliation in 2014, phosphorene has been the focus of rapidly expanding research activities. The number of phosphorene publications has been increasing at a rate exceeding that of other two-dimensional materials. This tremendous level of excitement arises from the unique properties of phosphorene, including its puckered layer structure. With its widely tunable band gap, strong in-plane anisotropy, and high carrier mobility, phosphorene is at the center of numerous fundamental studies and applications spanning from electronic, optoelectronic, and spintronic devices to sensors, actuators, and thermoelectrics to energy conversion, and storage devices. Here, we review the most significant recent studies in the field of phosphorene research and technology. Our focus is on the synthesis and layer number determination, anisotropic properties, tuning of the band gap and related properties, strain engineering, and applications in electronics, thermoelectrics, and energy storage. The current needs and likely future research directions for phosphorene are also discussed. npj 2D Materials and Applications (2017) 1:5 ; doi:10.1038/s41699-017-0007-5 INTRODUCTION properties, including high carrier mobility, ultrahigh surface area, Since the discovery of graphene in 2004 (ref. 1), there has been a excellent thermal conductivity, and quantum confinement effect 9 quest for new two-dimensional (2D) materials aimed at fully have been well documented. However, the lack of band gap is a exploring new fundamental phenomena stemming from quantum serious limitation for the use of graphene in electronic devices. -
Phosphorene: an Emerging 2D Material with Unique Applications
Phosphorene: An Emerging 2D Material with Unique Applications Priti Kharel Literature Seminar November 7th, 2019 The pioneering study of graphene in 2004 revealed that 2D materials exhibit unique properties because of the quantum confinement and size reduction effects.1 Graphene has a high carrier mobility, thermal conductivity and mechanical strength, all of which have paved its way for advanced technological applications.2 Over the past decade, new 2D materials are being extensively explored to unveil characteristics that can broaden their utilities. One such 2D material is phosphorene (Figure 1), which is a single- or few-layer form of black phosphorus (BP).3 Phosphorene distinguishes itself from other 2D materials due to its thickness dependent direct bandgap that spans over a wide range of electromagnetic spectrum (mid-IR to visible).3 It also has extremely high carrier mobility for a 2D semiconductor (~1000 cm2 V-1 s-1) and displays unique in-plane anisotropy.3,4 Phosphorene has a corrugated structure with aa each phosphorus (P) atom covalently bonded to other three P-atoms (Figure 1).5 Despite the suffix ‘ene’, the P-atoms are sp3 hybridized and yield the puckered configuration to maximize the distance between 6 single electron pair positioned at each atom. Its Zigzag structure is also responsible for the anisotropy in the material where the preferred electron transport direction (armchair) is perpendicular to the preferred thermal conduction direction (zigzag) (Figure 1).7 In Armchair addition, phosphorene may exhibit preferential b binding to certain molecules due to their interaction with the lone pairs in P-atoms.8 Such molecular specificity combined with the high surface area of phosphorene makes it suitable for gas sensors.8 Phospherene also has a direct bandgap that can be tuned by changing the number of layers (1.45 eV in P atoms on the top P atoms on the bottom monolayer to 0.33 eV in bulk).9,10 Due to such broadband absorption, phospherene can serve as an Figure 1.