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Cathodoluminescence As an Effective Probe of Carrier Transport and Deep Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures Zhibo Zhao1,a), Akshay Singh1,a), Jordan Chesin1, Rob Armitage2, Isaac Wildeson2, Parijat Deb2, Andrew Armstrong3, Kim Kisslinger4, Eric A. Stach4,b), Silvija Gradečak1,c) 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA 2Lumileds LLC, San Jose, California, 95131, USA 3Sandia National Laboratories, Albuquerque, New Mexico, 87185, USA 4Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York, 11973, USA Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decreases the expected gains in high-current external quantum efficiency. We study origins of these efficiency losses by correlating chip-level quantum efficiency measurements with structural and optical properties obtained using a combination of electron microscopy tools. The drop in quantum efficiency is not found to be correlated with quantum well (QW) width fluctuations. Rather, we show direct correlation between active region design, deep level defects, and delayed electron beam induced cathodoluminescence (CL) with a) These authors contributed equally to this work. b) Present address: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA c) Author to whom correspondence should be addressed. Electronic mail: [email protected] 1 characteristic rise time constants on the order of tens of seconds. We propose a model in which the electron beam fills deep level defect states and simultaneously drives reduction of the built-in field within the multi-quantum well active region, resulting in a delay in accumulation of carrier populations within the QWs. The CL measurements yield fundamental insights into carrier transport phenomena, efficiency-reducing defects, and quantum well band structure that are important in guiding future heterostructure process development. 2 InGaN/GaN quantum well (QW) heterostructures have enabled inorganic light emitting diodes (LEDs) with external quantum efficiencies (EQE) exceeding 70%.1,2 However, InGaN/GaN LEDs typically achieve peak EQE at relatively low current densities of ~ 10 A/cm2. At higher drive currents, the EQE decreases monotonically in a phenomenon known as efficiency droop.3 Overcoming droop in the high current regime (>100 A/cm2) can yield significant gains in both cost and wall-plug efficiency, particularly in emerging high power applications. A number of mechanisms have been proposed to account for (non-thermal) efficiency droop including current crowding, carrier delocalization, electron overshoot, and Auger recombination.3-5 Parallel droop mitigation strategies typically require structural and/or compositional changes within the active region QWs and barriers to improve carrier spreading and enhance the radiative recombination rate. However, these modifications are often accompanied by a pronounced reduction in low-current EQE suggesting increased Shockley- Read-Hall (SRH) defect densities.6,7 To realize actual gains in EQE, droop mitigating design concepts must be implemented without significant material quality degradation. The optoelectronic nature of defects in InGaN alloys, including deep level charge traps important in SRH pathways6,7 and V-pits present within the multi-QW region8-10, remains controversial and continues to hinder development of next-generation high-power LED devices and phosphor-free lighting solutions. Similar defects dominate non-radiative recombination in indium-rich green InGaN LEDs, which are necessary for bridging the green gap in red-green-blue lighting applications.11-14 Electron microscopy,15-17 in conjunction with standard device-level electrical characterization, allows direct correlation between QW microstructure, optical emission, and chip-scale EQE. In 3 this paper, we use cathodoluminescence in a scanning electron microscope (SEM-CL) to measure optical properties of LEDs comprised of InGaN/GaN QW heterostructures designed to reduce Auger recombination and mitigate efficiency droop. A time-delayed response (tens of seconds) from the InGaN QWs was observed for a subset of samples, while luminescence from the underlying GaN and dilute InGaN layers appeared instantaneously (within ~ 1 s). We find that neither the delayed CL response nor chip-scale EQEs are directly governed by microscopic structural modulations (specifically, QW width fluctuations). Instead, the delayed CL dynamics are attributed to a combination of (i) carrier sweep-out and subsequent charge accumulation across active region and (ii) carrier capture by deep level traps in vicinity of the QW active region. Hence, the observed time-delayed SEM-CL yields qualitative insights into device- relevant carrier transport within the multi-QW layers. Two series of low-droop InGaN/GaN QW heterostructures emitting at ~ 450 nm were grown epitaxially via metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Simplified schematics of the LED epitaxial structures are shown in Figure 1a. The first series of LEDs, HP10 and LP10, consists of a ten-period multi-QW active region with 3 nm InGaN QWs sandwiched between GaN barriers. In order to study effects of extended structural inhomogeneities14,16 on optoelectronic properties, QW width fluctuations (localized changes in QW thickness) were deliberately introduced into these samples. LP10 included changes to epitaxy process that were expected to result in different droop and SRH recombination behavior compared to HP10. Representative EQE measurements (Figure 1b) demonstrate that the device LP10 (LP, low performance) has significantly lower EQE compared to HP10 (HP, high performance). 4 Figure 1. a) Schematic of different layers in LED samples. b) EQE values (normalized to EQE of HP10), and corresponding representative dark field STEM images of InGaN/GaN QW regions (dashed box in (a)) for HP10, HP6, MP10 (shown as inset), LP10, and LP6. QW width fluctuations are indicated by yellow arrows in STEM images. All scale bars are 20 nm. We next performed scanning transmission electron microscopy (STEM) characterization of the device active regions in correlation with their macroscale efficiency. Sample preparation details are provided in the supplementary material. STEM was performed using either an FEI Titan or Hitachi 2700C, operating at 80 kV or 120 kV respectively. Importantly, the accelerating voltage was maintained below knock-on damage threshold for InGaN alloys to prevent beam- induced structural changes.18 Since mass-thickness is the dominant contrast mechanism in dark field STEM, InGaN QWs appear brighter compared to GaN barriers, and representative STEM 5 images confirm the presence of QW width fluctuations in HP/LP10 (Figure 1b). Although these STEM images show limited areas of the devices, our conclusions are based on a statistically significant number of images obtained across larger areas. While these samples have same number of QWs and similar QW/barrier thicknesses, the presence of QW width fluctuations does not correlate with chip-scale EQE measurements. In order to highlight the disparity between gross-scale structural imperfections and EQE, a third LED heterostructure (MP10) devoid of QW width fluctuations was grown in the same series as HP/LP10. The EQE of MP10 (MP, medium performance) was measured to be intermediate between HP10 and LP10 despite no noticeable QW width fluctuations. To further investigate the possible role of QW period and barrier thickness, we prepared a second series, HP6 and LP6, consisting of six-period multi-QW active region with 3 nm InGaN QWs sandwiched between 5 nm GaN barriers. Because QW width fluctuations were found to be unrelated to EQE, no effort was made to intentionally introduce fluctuations for HP/LP6 (Figure 1b). Similar to the previous comparison, a change in epitaxy processes of LP6 and HP6 was made with the expectation that the two samples would show different droop and SRH recombination behaviors. As expected, EQE measurements confirm that LP6 devices have significantly lower EQE compared to HP6, while HP6 exhibited the highest median EQE of all samples (Figure 1b). Taken together, chip-scale EQE and electronic carrier properties within QW active region are not related to features that are either a function of QW barrier thickness/period or immediately obvious from STEM-based structural analysis. In order to directly probe optoelectronic carrier properties within the LED heterostructure, we next performed SEM-CL measurements. Briefly, an electron beam is incident on the wafer along the growth direction, generating electron-hole pairs that subsequently recombine radiatively and 6 produce CL. The electron penetration depth can be changed by tuning accelerating voltage, thus providing control over relative contributions from different layers of the heterostructure.19,20 SEM-CL was measured in a JEOL JXA-8200 Superprobe operated at an accelerating voltage of 10 kV with beam current of 1 nA, unless specified otherwise. SEM-CL spectra were acquired once per second using 100 ms integration time under
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