Characterization of Nanostructured Semiconductors by Ultrafast

Total Page:16

File Type:pdf, Size:1020Kb

Characterization of Nanostructured Semiconductors by Ultrafast CHARACTERIZATION OF NANOSTRUCTURED SEMICONDUCTORS BY ULTRAFAST LUMINESCENCE IMAGING by Jolie Blake A dissertation submitted to the Faculty of the University of Delaware in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Chemistry and Biochemistry Summer 2017 c 2017 Jolie Blake All Rights Reserved CHARACTERIZATION OF NANOSTRUCTURED SEMICONDUCTORS BY ULTRAFAST LUMINESCENCE IMAGING by Jolie Blake Approved: Murray Johnston, Ph.D. Chair of the Department of Chemistry & Biochemistry Approved: George H. Watson, Ph.D. Dean of the College of Arts & Sciences Approved: Ann L. Ardis, Ph.D. Senior Vice Provost for Graduate and Professional Education I certify that I have read this dissertation and that in my opinion it meets the academic and professional standard required by the University as a dissertation for the degree of Doctor of Philosophy. Signed: Lars Gundlach, Ph.D. Professor in charge of dissertation I certify that I have read this dissertation and that in my opinion it meets the academic and professional standard required by the University as a dissertation for the degree of Doctor of Philosophy. Signed: Andrew V. Teplyakov, Ph.D. Member of dissertation committee I certify that I have read this dissertation and that in my opinion it meets the academic and professional standard required by the University as a dissertation for the degree of Doctor of Philosophy. Signed: Mathew DeCamp, Ph.D. Member of dissertation committee I certify that I have read this dissertation and that in my opinion it meets the academic and professional standard required by the University as a dissertation for the degree of Doctor of Philosophy. Signed: Joshua Zide, Ph.D. Member of dissertation committee ACKNOWLEDGEMENTS These past 6 years have been truly transformative. I have deepened my knowl- edge of chemistry, fallen in and out of love with my work and gained a mind flexible enough to tackle any problem. More importantly, this period has taught me about my- self, my weaknesses and strengths and provided a thorough and invaluable education on human nature. I am grateful for being given the opportunity to experience all of these things, the good and especially the bad. I must acknowledge all the people that helped shaped this experience. I would like to thank the members of the Gundlach Group, past and present, because without them this work would not be possible. In particular, I would like to thank Dr. Lars Gundlach for his hands-on help in the lab, help with preparing this dissertation and for having an open door policy. I would also like to thank Dr. Jesus Nieto-Pescador for this constant willingness to help me align my NOPA and for his patience in teaching me optical alignment. I thank Dr. Peter Eldridge for his work with Igor, which made it possible to efficiently collect and analyze data and hence significantly speed up the period towards publication. I am thankful to Baxter Abraham for his help with the optics, his great sense of humor and his resourcefulness in procuring things we needed in the lab. Additionally, I thank Dr. Zide who took the time to provide insight on semiconductor material properties, which turned out to be truly invaluable to completing this dissertation. I want to acknowledge Dr. Sharon Neal whose grace and wisdom I hope to someday acquire. I am truly grateful for the talks that we had and how, like a sage, you always knew what to say and had the right answers to every situation. Your advice and mentorship were instrumental to me completing my Ph.D. iv I am thankful for the other members of the Chemistry & Biochemistry Depart- ment such as Doug Nixon and Susan Cheadle. I want to thank Doug for helping me learn how to handle different types of glass, for quickly repairing my numerous cracked quartz tubes and for his useful input in helping me manifest many of my ideas. Susan Cheadle was always ready to help with the necessary paper work at each stage of my academic career. I especially want to thank her for helping me sort out my immigration documents to ensure my continued enrollment in the program. I am also thankful for the University of Delaware NOBCChE student chapter and its members. The chapter's events would not have been possible if it was not for the support of Dr. Murray Johnston who pledged his support for the group from the beginning. I want to thank the NOBCChE student members for supporting me and the other founding members in the creation of this chapter and for helping me with my vision of establishing our professional network. To Ornella Sathoud, supportive NOBCChE board member and friend, thank you for being a fellow black female scientist in this marginalizing environment and for being a formidable and resilient force of nature. I am grateful for our long talks on racism, prejudice and perseverance in this program despite the odds. I truly admire your determination. I have discovered the beauty in being constantly undermined, disparaged, treated less than and having your ability questioned is that it acts as a refining process. It polishes you into a person who does not rely on external validation or acknowledgment in pursuit of your highest potential. It helps you to recognize that your place here was not acquired by charity or luck but hard earned. If you have not already realized this effect I strongly believe you will soon. I cannot forget my undergraduate advisor Dr. Katherine Plass. If it was not for you sharing your undying passion and enthusiasm for research with me I probably would not be here today. If it was not for your insightful advice early on in this program, I definitely would not have been here today completing my Ph.D. Thank you for being a great teacher, advisor and mentor. Thank you for giving me the opportunity to work in your lab, encouraging me to pursue graduate school and for believing that v I had what it took to be a good researcher and chemist. Lastly, I want to thank my mom, my significant other Jonathan and the rest of my family. Jonathan, thank you for being so selfless, understanding and patient and for all those long nights you sat in my office waiting for me while I worked in the lab. It would not have been possible without you. Mom, I dedicate this dissertation to you. You were my first teacher, my biggest supporter, my one-woman fan club and the one person who never once doubted my ability to do anything especially completing this program. Thank you for your sacrifice, constant encouragement and prayers. You may write me down in history With your bitter, twisted lies, You may trod me in the very dirt But still, like dust, I'll rise. You may shoot me with your words, You may cut me with your eyes, You may kill me with your hatefulness, But still, like air, I'll rise. Maya Angelou (1921-2014) vi TABLE OF CONTENTS LIST OF TABLES :::::::::::::::::::::::::::::::: x LIST OF FIGURES ::::::::::::::::::::::::::::::: xi ABSTRACT ::::::::::::::::::::::::::::::::::: xviii Chapter 1 INTRODUCTION :::::::::::::::::::::::::::::: 1 1.0.1 Measuring the electronic properties of nanostructures ::::: 6 1.1 Amplified Spontaneous Emission :::::::::::::::::::: 7 1.2 Objectives ::::::::::::::::::::::::::::::::: 11 2 EXPERIMENTAL METHODS :::::::::::::::::::::: 13 2.1 Ultrafast Kerr-gated Microscope ::::::::::::::::::::: 13 2.1.1 Kerr-electro-optic effect ::::::::::::::::::::: 13 2.1.2 Laser system ::::::::::::::::::::::::::: 17 2.1.3 Microscope optical setup ::::::::::::::::::::: 19 2.1.4 Ultraviolet Configuration ::::::::::::::::::::: 20 2.1.5 Modes of operation :::::::::::::::::::::::: 20 2.2 Sample Preparation :::::::::::::::::::::::::::: 21 3 KERR-GATED MICROSCOPY IN THE VISIBLE DETECTION vii RANGE :::::::::::::::::::::::::::::::::::: 24 3.1 Cadmium Sulfide Selenide Semiconductor material ::::::::::: 24 3.1.1 CdSxSe1−x Nanostructure Synthesis ::::::::::::::: 25 3.2 Ultrafast Measurements ::::::::::::::::::::::::: 26 3.2.1 Spatial Variation in Carrier Dynamics ::::::::::::: 26 3.3 Extracting non-radiative recombination rates in a single CdSxSe1−x nanowire :::::::::::::::::::::::::::::::::: 35 3.3.1 Introduction :::::::::::::::::::::::::::: 35 3.3.2 Materials and Methods :::::::::::::::::::::: 36 3.3.3 Results and discussion :::::::::::::::::::::: 38 3.3.4 Conclusions :::::::::::::::::::::::::::: 41 4 ZINC OXIDE SEMICONDUCTOR MATERIAL :::::::::: 42 4.1 Historical Timeline :::::::::::::::::::::::::::: 42 4.2 Fundamental properties and applications :::::::::::::::: 43 4.2.1 Crystal structure ::::::::::::::::::::::::: 45 4.3 Synthesis and growth ::::::::::::::::::::::::::: 46 4.3.1 Vapor Phase Synthesis of ZnO :::::::::::::::::: 48 4.3.2 Solution based Synthesis of ZnO ::::::::::::::::: 55 4.4 Point defects :::::::::::::::::::::::::::::::: 69 5 ULTRAVIOLET FEMTOSECOND KERR-GATED MICROSCOPY ::::::::::::::::::::::::::::::: 75 5.1 Kerr Medium Selection for the UV ::::::::::::::::::: 75 5.2 Preliminary Ultrafast Measurements :::::::::::::::::: 78 5.2.1 ZnO single nanowire samples :::::::::::::::::: 78 5.2.2 Steady State Measurements ::::::::::::::::::: 78 5.2.3 Time-resolved Spectroscopy ::::::::::::::::::: 82 viii 5.2.4 Time-resolved Imaging :::::::::::::::::::::: 85 5.3 Conclusion ::::::::::::::::::::::::::::::::: 87 6 KERR-GATED MICROSCOPY FOR MEASURING DEFECT DENSITY ::::::::::::::::::::::::::::::::::: 89 6.1 Introduction :::::::::::::::::::::::::::::::: 89 6.2 Results and Discussion :::::::::::::::::::::::::: 92 6.2.1 Steady state measurements :::::::::::::::::::: 92 6.2.2 Time resolved measurements ::::::::::::::::::: 95 6.2.3 Recombination rates from the Amplified Spontaneous
Recommended publications
  • Cathodoluminescence in Semiconductor Structures Under Local Tunneling Electron Injection Petr Polovodov
    Cathodoluminescence in semiconductor structures under local tunneling electron injection Petr Polovodov To cite this version: Petr Polovodov. Cathodoluminescence in semiconductor structures under local tunneling electron injection. Optics [physics.optics]. Ecole Doctorale de l’Ecole Polytechnique, 2015. English. tel- 01346834v2 HAL Id: tel-01346834 https://hal.archives-ouvertes.fr/tel-01346834v2 Submitted on 23 Jul 2016 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Thèse présentée pour obtenir le grade de DOCTEUR DE L'ÉCOLE POLYTECHNIQUE Spécialité : Physique Par Petr POLOVODOV Cathodoluminescence in semiconductor structures under local tunneling electron injection Soutenue le 21 décembre 2015 devant le jury composé de : M. Fabrice Charra CEA/Saclay, Gif sur Yvette Rapporteur M. Philippe Dumas CINaM, Marseille Rapporteur M. Razvigor Ossikovski LPICM, Ecole Polytechnique, Palaiseau Examinateur M. Oleg Tereshchenko Rzhanov Institute of Semiconductor Examinateur Physics, Novosibirsk, Russie M. Yves Lassailly LPMC, Ecole Polytechnique, Palaiseau Directeur de thèse M. Jacques Peretti LPMC, Ecole Polytechnique, Palaiseau Co-Directeur de thèse 2 ACNOWLEGEMENTS I have defended my PhD thesis in physics. This is the accomplishment of myself but several persons have contributed to this work. First of all, I am grateful to François Ozanam and Mathis Plapp, successive Directors of the Laboratory, who allowed me to perform my PhD work at the LPMC in the best possible conditions.
    [Show full text]
  • Low-Voltage Cathodoluminescent Phosphors a 20-Year Chronology of Low-Voltage Cathodoluminescence Efficiency by Lauren E
    Low-Voltage Cathodoluminescent Phosphors A 20-year chronology of low-voltage cathodoluminescence efficiency by Lauren E. Shea hosphors have been used for the display of information since the invention of the cathode-ray tube (CRT) by Karl Ferdinand Braun in 1897 (1). With the P development of color television, an effort spanning approximately thirty years, came the most significant advances in phosphor technology. The most noteworthy was the shift to the all-sulfide system, and discovery of the red, rare-earth oxysulfide phosphors 3+ (e.g., Y2O2S:Eu ) (2). White brightness efficiency of phosphor screens also improved significantly: 15 lm/W in FIG. 1. Efficiency of red phosphor powders (lettered squares) and screens (numbered diamonds) as a function of electron accelerating voltage. Y O :Eu - A, I, S (12); G (13); N (20); O, U, 5, 9 (14); W (21); YVO :Eu - B, L, 1951 to over 35 lm/W in 1979, as a 2 3 4 Q (13); F (18); P, X, 7, 10 (14); Y2O2S:Eu - C, J, R (22); D(12); H, Y (20); K, V (21); M, T, 3, 6, 11 (14); 8 result of new phosphor formulations (23); ZnCdS:Ag, In - 1 (16); ZnCdS:Ag, In + SnO2 - 2 (17); LaInO3:Eu - 4 (15); unspecified - E (18). and improved screening techniques (3). Today, a primary focus of research toire d’Electronique de Technologie et reported in earlier years, and (4) has in the area of luminescence is phosphor d’Instrumentation (LETI) (5). Many progress been made? development and improvement for FEDs are being designed for operation in ≤ low-voltage ( 1 kV) emissive flat-panel the 5-10 kV range.
    [Show full text]
  • Multi-Color Correlative Light and Electron Microscopy Using Nanoparticle Cathodoluminescence
    Multi-color correlative light and electron microscopy using nanoparticle cathodoluminescence D.R. Glenn1, H. Zhang1, N. Kasthuri2,3, R. Schalek2,3, P.K. Lo4, A.S. Trifonov1, H. Park4, J.W. Lichtman2,3, R.L. Walsworth1,3,5 1.Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138, 2.Department of Molecular and Cellular Biology, 3.Center for Brain Science, 4.Department of Chemistry, 5.Department of Physics, Harvard University, Cambridge, MA 02138 Abstract: Correlative light and electron microscopy promises to combine molecular specificity with nanoscale imaging resolution. However, there are substantial technical challenges including reliable co-registration of optical and electron images, and rapid optical signal degradation under electron beam irradiation. Here, we introduce a new approach to solve these problems: multi-color imaging of stable optical cathodoluminescence emitted in a scanning electron microscope by nanoparticles with controllable surface chemistry. We demonstrate well-correlated cathodoluminescence and secondary electron images using three species of semiconductor nanoparticles that contain defects providing stable, spectrally-distinguishable cathodoluminescence. We also demonstrate reliable surface functionalization of the particles. The results pave the way for the use of such nanoparticles for targeted labeling of surfaces to provide nanoscale mapping of molecular composition, indicated by cathodoluminescence color, simultaneously acquired with structural electron images in a single instrument. Introduction: The correlation of light microscopy with electron microscopy offers considerable scope for new discovery and applications in the physical and life sciences by providing images with both molecular specificity and nanoscale spatial resolution [1]. However, such an approach also faces substantial technical challenges in the reliable and efficient co-registration of optical and electron images [2] [3] [4].
    [Show full text]
  • Scanning Electron Microscopy, Cathodoluminescence, and Raman Spectroscopy of Experimentally Shock-Metamorphosed Quartzite
    Meteoritics & Planetary Science 38, Nr 8, 1187–1197 (2003) Abstract available online at http://meteoritics.org Scanning electron microscopy, cathodoluminescence, and Raman spectroscopy of experimentally shock-metamorphosed quartzite Arnold GUCSIK, 1 Christian KOEBERL, 1* Franz BRANDSTÄTTER, 2 Eugen LIBOWITZKY, 3 and Wolf Uwe REIMOLD 4 1Department of Geological Sciences, University of Vienna, Althanstrasse 14, A-1090 Vienna, Austria 2Department of Mineralogy, Natural History Museum, P.O. Box 417, A-1014 Vienna, Austria 3Institute of Mineralogy and Crystallography, University of Vienna, Althanstrasse 14, A-1090 Vienna, Austria 4Impact Cratering Research Group, School of Geosciences, University of Witwatersrand, Private Bag 3, P.O. 2050, Johannesburg, South Africa *Corresponding author. E-mail: [email protected] (Received 30 December 2002; revision accepted 8 July 2003) Abstract–We studied unshocked and experimentally (at 12, 25, and 28 GPa, with 25, 100, 450, and 750°C pre-shock temperatures) shock-metamorphosed Hospital Hill quartzite from South Africa using cathodoluminescence (CL) images and spectroscopy and Raman spectroscopy to document systematic pressure or temperature-related effects that could be used in shock barometry. In general, CL images of all samples show CL-bright luminescent patchy areas and bands in otherwise non- luminescent quartz, as well as CL-dark irregular fractures. Fluid inclusions appear dominant in CL images of the 25 GPa sample shocked at 750°C and of the 28 GPa sample shocked at 450°C. Only the optical image of our 28 GPa sample shocked at 25°C exhibits distinct planar deformation features (PDFs). Cathodoluminescence spectra of unshocked and experimentally shocked samples show broad bands in the near-ultraviolet range and the visible light range at all shock stages, indicating the presence of defect centers on, e.g., SiO 4 groups.
    [Show full text]
  • Photoluminescence and Cathodoluminescence Properties of a Novel 3+ Calaga3o7:Dy Phosphor
    View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Springer - Publisher Connector Article Materials Science March 2012 Vol.57 No.7: 827831 doi: 10.1007/s11434-011-4938-5 Photoluminescence and cathodoluminescence properties of a novel 3+ CaLaGa3O7:Dy phosphor ZHAO WenYu1,2*, AN ShengLi1, FAN Bin1, LI SongBo1 & DAI YaTang3 1 School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083, China; 2 School of Chemistry and Chemical Engineering, Inner Mongolia University of Science and Technology, Baotou 014010, China; 3 School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621000, China Received July 14, 2011; accepted October 19, 2011; published online December 27, 2011 3+ A single host white emitting phosphor, CaLaGa3O7:Dy , was synthesized by chemical co-precipitation. Field emission scanning electron microscopy, X-ray diffraction, laser particle size analysis, and photoluminescence and cathodoluminescence spectra were used to investigate the structural and optical properties of the phosphor. The phosphor particles were composed of microspheres with a slight tendency to agglomerate, and an average diameter was of about 1.0 m. The Dy3+ ions acted as luminescent centers, 3+ and substituted La ions in the single crystal lattice of CaLaGa3O7 where they were located in Cs sites. Under excitation with 3+ 3+ ultraviolet light and a low voltage electron beam, the CaLaGa3O7:Dy phosphor exhibited the characteristic emission of Dy 4 6 4 6 ( F9/2- H15/2 and F9/2- H13/2 transitions) with intense yellow emission at about 573 nm. The chromaticity coordinates for the phos- phor were in the white region.
    [Show full text]
  • Application of Cathodoluminescence in Paint Analysis
    Scanning Microscopy Volume 6 Number 3 Article 4 6-30-1992 Application of Cathodoluminescence in Paint Analysis W. Stoecklein Bundeskriminalamt R. Göbel Bundeskriminalamt Follow this and additional works at: https://digitalcommons.usu.edu/microscopy Part of the Biology Commons Recommended Citation Stoecklein, W. and Göbel, R. (1992) "Application of Cathodoluminescence in Paint Analysis," Scanning Microscopy: Vol. 6 : No. 3 , Article 4. Available at: https://digitalcommons.usu.edu/microscopy/vol6/iss3/4 This Article is brought to you for free and open access by the Western Dairy Center at DigitalCommons@USU. It has been accepted for inclusion in Scanning Microscopy by an authorized administrator of DigitalCommons@USU. For more information, please contact [email protected]. Scanning Microscopy, Vol. 6, No. 2, 1992 (Pages 669-678) 0891- 7035/92$5. 00 +. 00 Scanning Microscopy International, Chicago (AMF O'Hare), IL 60666 USA APPLICATION OF CATHODOLUMINESCENCE IN PAINT ANALYSIS W. Stoecklein* and R. Gobel Bundeskriminalamt, Forensic Science Institute D-6200 Wiesbaden, Federal Republic of Germany (Received for publication May 3, 19921, and in revised form June 30, 1992) Abstract Introduction When solving cases of burglary or investigating Paints and their components often play a decisive ship collisions, the forensic scientist frequently has to role as evidence in solving crimes. The forensic scien­ examine several layers of paint of the same color, often tist analyzing such material must not only determine the white. As a rule, the usual microscopic and spectro­ origin of unknown paints (identification and classifica­ scopic methods [fluorescence microscopy, FT-IR (Four­ tion) but in addition compare traces collected from ob­ ier Transform Infrared Spectroscopy), pyrolysis, GC/MS jects in the suspect's possession or found in his environ­ (Gas Chromatography - Mass Spectrometry), etc.] are ment with those traces secured at the scene of the crime.
    [Show full text]
  • Dislocation Related Droop in Ingan/Gan Light Emitting Diodes Investigated Via Cathodoluminescence
    Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence Galia Pozina, Rafal Ciechonski, Zhaoxia Bi, Lars Samuelson and Bo Monemar Linköping University Post Print N.B.: When citing this work, cite the original article. Original Publication: Galia Pozina, Rafal Ciechonski, Zhaoxia Bi, Lars Samuelson and Bo Monemar, Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence, 2015, Applied Physics Letters, (107), 25, 251106. http://dx.doi.org/10.1063/1.4938208 Copyright: American Institute of Physics (AIP) http://www.aip.org/ Postprint available at: Linköping University Electronic Press http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-125162 Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence Galia Pozina, Rafal Ciechonski, Zhaoxia Bi, Lars Samuelson, and Bo Monemar Citation: Applied Physics Letters 107, 251106 (2015); doi: 10.1063/1.4938208 View online: http://dx.doi.org/10.1063/1.4938208 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/107/25?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High-power low-droop violet semipolar ( 30 3 ¯ 1 ¯ ) InGaN/GaN light-emitting diodes with thick active layer design Appl. Phys. Lett. 105, 171106 (2014); 10.1063/1.4900793 Influence of dislocation density on carrier injection in InGaN/GaN light-emitting diodes operated with alternating current Appl. Phys. Lett. 102, 011115 (2013); 10.1063/1.4773588 Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes Appl. Phys. Lett. 101, 162102 (2012); 10.1063/1.4759003 Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates J.
    [Show full text]
  • SOP Cathodoluminescence Microscope
    Identifier: Revision: Effective Date: Review Date: University of Puerto Rico SOP-004 1 02/27/2007 03/26/2007 Mayagüez Campus Geology Dept. Document No.: EXACt! - 004 Author: Miguel A. Santiago Rivera Department of Geology UPR-NSF Earth X-ray Analysis Center (EXACt!) Standard Operating Procedure for: OOppeerraattiinngg tthhee Reelliioonn CCaatthhooddoolluummiinneesscceennccee Miiccrroossccooppee UPR-NSF Earth X-ray Analysis Center (EXACt!) UPR-Mayaguez, is an affirmative action / equal X – R a y L A B O R A T O R Y opportunity employer, is operated, by the University of Puerto Rico. __________________________________________________ DEPARTMENT OF GEOLOGY F- 304 Geochemistry Facilities at Physics Building University of Puerto Rico – Mayagüez Campus 1 Revision Log Revision Effective Prepared By Description Affected No. Date of Changes Pages R-0 February 27, 2007 Miguel Santiago All New Procedure All R-1 March 26, 2007 Miguel Santiago X-rays Warning for One Pregnant and Page -11 Cancer patient 8.0 - Procedure \ 2 Operating the Relion Cathodoluminescence Microscope Table of Contents 1.0 PURPOSE . 4 2.0 SCOPE . 4 3.0 TRAINING . 4 4.0 DEFINITIONS . 4 5.0 RESPONSIBLE PERSONNEL . 5 6.0 THEORETICAL BACKGROUND . 5 7.0 EQUIPMENT . 9 8.0 PROCEDURE . 11 9.0 RECORDS . 17 10.0 REFERENCES . 17 3 Operating the Relion Cathodoluminescence Microscope 1.0 PURPOSE This procedure provides instructions for the operation of the Relion Industries, Cathodoluminescence Microscope Model Nikkon OPTIPHOT-2. The UPRM – Department of Geology has a cold cathode, CITL 8200 Mk 3A mounted on a Nikon Optiphot-2 petrological microscope available for optical CL studies. The Nikon Optiphot-2 is set up as a digital fluorescence acquisition microscope.
    [Show full text]
  • Cathodoluminescence Nano-Characterization of Semiconductors
    Cathodoluminescence nano-characterization of semiconductors Paul R. Edwards and Robert W. Martin Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK Email: [email protected], [email protected] Abstract. We give an overview of the use of cathodoluminescence (CL) in the scanning electron microscope (SEM) for the nano-scale characterization of semiconducting materials and devices. We discuss the technical aspects of the measurement, such as factors limiting the spatial resolution and design considerations for efficient collection optics. The advantages of more recent developments in the technique are outlined, including the use of the hyperspectral imaging mode and the combination of CL and other SEM-based measurements. We illustrate these points with examples from our own experience of designing and constructing CL systems and applying the technique to the characterization of III-nitride materials and nanostructures. PACS: 78.60.Hk, 68.37.Hk 1. Introduction Cathodoluminescence (CL) is the phenomenon of light emission from a material under excitation by an energetic electron beam. The use of CL as an image-forming mode in scanning electron microscopy (SEM) can be traced back to work carried out on the first, pre- commercial, SEMs [1]. While early applications were mainly restricted to the study of cathode ray tube phosphors and geological samples, the technique began to be used for the analysis of epitaxial semiconducting materials during the 1960s [2]. The development of the technique as a characterization tool was driven by a number of differences between CL and the analogous techniques of photo- and electroluminescence (PL, EL).
    [Show full text]
  • Assessing Color Cathodoluminescence Imaging in the Scanning Electron Microscope
    Assessing Color Cathodoluminescence Imaging in the Scanning Electron Microscope Edward P. Vicenzi1 1 Smithsonian Institution, Museum Conservation Institute, Suitland, MD 20746, USA Historically, color cathodoluminescence (CL) images were obtained in the luminoscope and visualized by direct examination, film exposure, or combining red, green, and blue (RGB) filtered images collected sequentially using a greyscale CCD camera [1]. Scanning electron microscope-based CL systems offer advantages with respect to higher spatial resolution and lower electron dose/dose-rate imaging. Despite these advantages many SEM-based CL systems output only the sum of photons of all energies to form a panchromatic greyscale image by way of a photomultiplier tube (PMT) detector. Some PMT systems are modified to include RGB filtering. Such RGB images are a useful, if simplistic, color representation of the specimen. However, these long band pass images do not necessarily faithfully represent the entire spectrum of luminesced photons in the visible. Images for this study were initially collected using a Gatan ChromaCL2. This system uses a high collection efficiency parabolic mirror and disperses luminesced light onto a segmented PMT. Sixteen PMT segments are then binned into four UV-VIS images resulting in multispectral image output (Fig. 1). These dispersive multispectral (DMS) images can be collected with pixel dwell times in the range of 100s of microseconds, shorter than CCD-based systems typically limited to millisecond read-out rates. The higher image collection speed make higher pixel density, and therefore higher spatial resolution, imaging practical. In order to evaluate the spectral fidelity of DMS CL imaging, full spectroscopic imaging using a Gatan MonoCL4 Elite was also performed.
    [Show full text]
  • Cathodoluminescence Spectroscopy Studies of Aluminum Gallium Nitride and Silicon Device Structures As a Function of Irradiation and Processing
    CATHODOLUMINESCENCE SPECTROSCOPY STUDIES OF ALUMINUM GALLIUM NITRIDE AND SILICON DEVICE STRUCTURES AS A FUNCTION OF IRRADIATION AND PROCESSING DISSERTATION Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the Graduate School of The Ohio State University By Brad Derek White, B.S., M.S. ****************** The Ohio State University 2006 Dissertation Committee: Approved by Dr. Leonard J. Brillson, Adviser Dr. Wu Lu ___________________________________ Dr. Betty Lise Anderson Adviser Graduate Program in Electrical Engineering ABSTRACT Electronic device performance is critically dependent on the presence of deep-level and shallow states in the electronic band gap. A uniform or localized distribution of defects throughout a device structure can adversely affect doping and carrier transport, and result in changes to device saturation current, threshold voltage, ohmic contact resistivity, and Schottky barrier properties, including leakage currents. Process-induced atomic intermixing effects at heterostructure interfaces can cause decreases in sheet density and mobility of channel layers. For the presence of all such effects, the spatial variation across a given wafer can result in significant variation in device performance depending on spatial position. Spatially-resolved cathodoluminescence spectroscopy (CLS) has been used to identify the presence of radiative point and extended defects in the semiconductor band gap produced by irradiation and processing conditions for Si and GaN-based devices. Changes in deep level emission in Al-SiO2-Si capacitor structures revealed a gradient in relative defect concentrations across the SiO2 film after x-ray irradiation, indicating interface-specific defect creation. CLS measurements also revealed changes in the near-band edge signatures of AlGaN-GaN high-electron mobility transistor (HEMT) structures subjected to 1.8 MeV proton irradiation.
    [Show full text]
  • Some Geological Applications of Cathodoluminescence
    Somegeological applications ofcathodoluminescence examplesfrom the Lemitar Mountains and Riley travertine, SocorroGounty, New Mexico byVirginiaT. McLemore and James M. Barker,New Mexico Bureau of Minesand Mineral Resources, Socorro, NM 87801 Introduction ratio of authigenic and detrital minerals (Sippel, 1968),stratigraphy, Cathodoluminescence(CL), the characteristicvisible radiation (color) siliclastic components, cementation history, and provenance (Owen produced in a mineral subjected to bombardment by electrons, was and Carrozi,1986). CL hasbeen used in paleontologyto study struc- first observed in the 1870's by Crookes (1.879).It has significant ture and chemistry of fossils (Nickel, 1'978;Batkerand Wood, 1986a). applications in petrology, although many petrologists do not utilize The CL of a sample reveals geochemical,rather than optical, var- it. Luminescencein CL is typically more intense than that produced iations in a sample, which provides important compositional,tex- by ultraviolet light (see pp. 25-30, this issue);CL is also observed tural, and structural information not readily obtained by other in mineralsthat do not luminesceunder ultraviolet light. methods. However, CL is most useful when used in conjunction Cathodoluminescence is produced by excitation of electrons in with other studies such as optical microscopy,x-ray diffraction, elec- specific chemical impurities (activators) within a crystal structure. tron microprobe, scanning electron microscopy, and geochemistry. When excited electronsreturn to their ground state, visible light may Unlike ultraviolet light, where an entire specimen can be exposed, be emitted.CL may be producedat sitesaltered by radiationdamage, CL requires a thin section or relatively thin slab, preferably with chemical heterogeneity, electron charge displacements, and struc- doubly polished surfaces.The doubly polished thin sectionsalso can tural defects (Mariano, 1976;Nickel, 1978), or by unidentified pro- be used in the electron microprobe or fluid inclusion stage.
    [Show full text]