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United States Patent (19) 11 Patent Number: 5,811,022 Savas Et Al

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United States Patent (19) 11 Patent Number: 5,811,022 Savas Et Al US00581 IIIHH1022A United States Patent (19) 11 Patent Number: 5,811,022 Savas et al. 45 Date of Patent: Sep. 22, 1998 54) INDUCTIVE PLASMA REACTOR 59-84528 5/1984 Japan ................................ C23F 1/08 6-84837 3/1994 Japan ........................... HO1L 21/302 75) Inventors: Stephen E. Savas, Alameda; Brad S. 6084837 3/1994 Japan. Mattson, Los Gatos, both of Calif. WO 91/10341 7/199 WIPO. 73 Assignee: Mattson Technology, Inc., Fremont, OTHER PUBLICATIONSUBLICATIO Calif. "Plasma Physics-Study of the electron temperature and density of an inductive HF discharge in hydrogen, using the 21 Appl. No.: 340,696 symmetrical double-probe method”-report by Mr. Guy Turban, as presented by Mr. Louis Neel. C.R. Acad. Sc. 22 Filed: Nov. 15, 1994 Paris, vol. 273 (Sep. 27, 1971), Series B. pp. 533-536. Both (51) Int. Cl. .................. Host 100 the French article and English translation of the text are o included. 52 U.S. C. 43875.1567.,2.if: "Plasma Physics-Measurement of the energy-distribution 204/298.31; 204/298.36; 204/298.37 function of electrons in an inductive HF discharge in hydro 58) Field of Search .......................... isos. In genusing the asymmetric triple probe methodeport by 118/723 IR, 723 ER. 204/298.31, 298.36, Mr. Guy Turban, as presented by Mr. Louis Neel. C.R. Acad. 298.34 298 08: 21668. 438.25 729 Sc. Paris, vol. 273 (Oct. 4, 1971), Series B. pp. 584-587. sw sww. Both the French article and English translation of the text are 730,731 included. 56 References Cited (List continued on next page.) U.S. PATENT DOCUMENTS Primary Examiner. Thi Dang 4,132,613 1/1979 Penfold et al. ......................... Attorney Agent, or Firm-Wilson Sonsini Goodrich & 4.252,608 2/1981 Baldwin et al. ... down vu 6. Rosati 4,431,898 2/1984 Reinberg et al. ...... ...,... 219/12118/723 57 ABSTRACT 4,450,787 5/1984 Weakiem et al... 4,844,775 7/1989 Keeble ................ "3 Aplasma reactor and methods for processing semiconductor 4,918,031 4/1990 Flamm et al. ... 437/22.5 wafers are described. Gases are introduced into a reactor 4.948,458 8/1990 Ogle .................... a E. chamber. An induction coil surrounds the reactor chamber. 5,057.187 10/1991 Shinagawa et al. 5,108.535 4/1992 Ono et al. ... 156,345 RF power is applied to the induction coil and is inductively 5,156,703 10/1992 Oechsner ........ ... 156/345 X coupled into the reactor chamber causing a plasma to form. 5,198,634 3/1993 Mattson et al. ... 219/121.43 A split Faraday shield is interposed between the induction 5,217,560 6/1993 Kurono et al. ...... ona as 156/345 coil and the reactor chamber to substantially block the 5,226,056 7/1993 Kikuchi et al. ..... 373/18 capacitive coupling of energy into the reactor chamber 5,228,052 7/1993 Kikuchi et al. 373/18 which may modulate the plasma potential. The configuration 5,234,529 8/1993 Johnson .............. " I of the split Faraday shield may be selected to control the 5,284,544 2/1994 Mizutani et al. ... ... 156/345 level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to (List continued on next page.) accelerate ions toward a wafer surface. For isotropic etching FOREIGN PATENT DOCUMENTS processes, charged particles may be filtered from the gas 380.1309 7/1989 Denmark. flow, while a neutral activated species passes unimpeded to 0 131 433 1/1985 European Pat. Off.. a wafer surface. 0 132015 1/1985 European Pat. Off. 0.443 154 8/1991 European Pat. Off.. 57 Claims, 12 Drawing Sheets 5,811,022 Page 2 U.S. PATENT DOCUMENTS B. A. Probyn, "Sputtering of Insulators in an RFDischarge". 5,284,547 2/1994 Watanabe ................................ 156/626 Wacuum, vol. 18, No. 5, 1968, pp. 253–257. 5,294.292 3/1994 Yamashita et al. ... 156/643 Takuo Sugano. "Applications of Plasma Processes to VLSI 5.310,456 5/1994 Kadomura ........... ... 156/657 5,312,518 5/1994 Kadomura ....... ... 156/662 Technology", 1985. pp. 209 and 213. 5,350,480 9/1994 Gray ............ ... 156/345 J. W. Coburn, "Summary Abstract: Ion-Enhanced Gas-Sur 5,449,433 9/1995 Donohoe ..... ... 156/345 X face Chemistry". J. Wac. Sci. Technol. vol. 21. No. 2, 5.462,629 O/1995 Kubota et al. .. ... 156,345 Jul/Aug. 1982, pp. 557-558. 5,462,635 10/1995 Ono et al. ....... ... 156/345 5.518,572 5/1996 Kinoshita et al. .. ... 156/345 Daniel L. Flamm et al., "The Design of Plasma Etchants", 5,534,231 7/1996 Savas ....................................... 216/67 Plasma Chemistry and Plasma Processing, vol. 1, No. 4, 1981, pp. 317-363. OTHER PUBLICATIONS J. Freisinger et al., "RF-ION Source RIM IO for Material "The Hundred Year History Of Induction Discharges". Hans Processing with Reactive Gases". GD88. Venezia 19-23 U. Eckert, Proceedings 2nd Annual International Confer Sep. 1988 DX International Conference on Gas Discharges ence on Plasma Chemistry and Technology, Herman Boenig. and Their Applications. Ed., Techromic Publ., Lancaster, PA, 1986, pp. 171-202. "ICRHAntenna Design And Coupling Optimization Stud J. W. Coburn et al., "Positive-ion bombardment of sub ies", R. R. Weynants et al., Proceedings of 2nd Joint strates in rf diode glow discharge sputtering". J. Appl. Phys. Grenoble-Vienna International Symposium, vol. 1 (Como, vol.43, No. 12. Dec. 1972, pp. 4965-4971. Italy) 1980. J. Freisinger et al., “The neutral particle injectors RIG for John A. Thornton, "Plasma-Assisted Deposition Processes: fusion reactors", Atomkernenergie Kerntechnik, vol. 44 Theory, Mechanisms and Applications". Thin Solid Films, (1984) No. 1, pp. 81-86. vol. 107, 1983, pp. 3-19. J. L. Vossen, "Glow Discharge Phenomena in Plasma Etch Techniques and Applications of Plasma Chemistry, pub ing and Plasma Deposition". J. ElectrochemSoc., Feb. 1979, lished by John Wiley & Sons, 1974, pp. 322-324. vol. 126, No. 2, pp. 319-324. U.S. Patent Sep. 22, 1998 Sheet 1 of 12 5,811,022 8| Z ’61-Iuolud)L(?uv N 2-01-N U.S. Patent Sep. 22, 1998 Sheet 3 of 12 5,811,022 III,II,III-TE-TTTTTLI DISTINIËTISTIÑET |----???? IT-TIL-TT-TITTLLLIT,|-------)------ X,\THETJU, 00|| U.S. Patent Sep. 22, 1998 Sheet 4 of 12 5,811,022 U.S. Patent Sep. 22, 1998 Sheet 5 of 12 5,811,022 O Se= 98 (10.9x10-16 Wcm) -2 -4 -6 96 LOG(f(E)) (8.8x1016 Wcm) -8 (2.2x10-16 Wcm) -12 94 (44x1016 Wcm) 5 10 15 20 25 30 T T. E. (e.V.) Electron Kinetic Energy Fig. 9 U.S. Patent Sep. 22, 1998 Sheet 6 of 12 5,811,022 {{|/ NNNNNNNNNNNØ U.S. Patent Sep. 22, 1998 Sheet 7 of 12 5,811,022 60 C Ostray L Fig. 11A 64 L C Fig. 11B U.S. Patent Sep. 22, 1998 Sheet 9 of 12 5,811,022 CN O CN f Vn OO CN O O O) () t l C N O CN k— S. U.S. Patent Sep. 22, 1998 Sheet 10 of 12 5,811,022 Fig. 14 U.S. Patent Sep. 22, 1998 Sheet 11 of 12 5,811,022 402 4.08 420 424 U.S. Patent Sep. 22, 1998 Sheet 12 of 12 5,811,022 N 1. N - - 1 - - - 1 lar T. s. N M / 1 s N W M * \\N -24/ S 5,811,022 1. 2 INDUCTIVE PLASMA REACTOR ment mandated radiation limits are less stringent than at non-ISM frequencies, particularly those within the commu BACKGROUND OF THE INVENTION nication bands. The substantially universal use of 13.56Mhz is further encouraged by the large amount of equipment 1. Field of the Invention available at that frequency because of this ISM standard. The field of the present invention relates in general to Other ISM standard frequencies are at 27.12 and 40.68 plasma reactors and processes typically used for wafer MHz, which are first and second order harmonics of the processing or the like. More particularly, the field of the 13.56MHz ISM standard frequency. invention relates to a wafer processing plasma reactor in This energy is applied to a gas in the reactor chamber to which the plasma is generated primarily by inductively O form a plasma. The plasma consists of two qualitatively coupled power. different regions: a quasineutral, equipotential conductive 2. Background plasma body 9 and a boundary layer 10 called the plasma A variety of approaches are currently in use for sheath. The plasma body consists of substantially equal deposition, etching, resist removal, and related processing densities of negative and positive charged particles as well for semiconductor wafers and other substrates. A typical S as radicals and stable neutral particles. RF power coupled process may involve the placement of photoresist, the etch into the reactor chamber couples energy into the free ing of areas unprotected by the resist, and the removal of the electrons, imparting sufficient energy to many of these residual resist. One method for etching and resist removal electrons that ions can be produced through collisions of involves the immersion of the substrate in a chemical bath these electrons with gas molecules. In addition to this that attacks the substrate or the resist. This method is ionization, dissociation and excitation of molecules occur generally known as wet chemical etching or stripping. While within the plasma body. In dissociation, a molecule, such as wet etching is conceptually straightforward, it has signifi O breaks down into smaller fragments, such as atomic cant disadvantages. For instance, wet etching requires the oxygen.
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