High-Speed, Low-Power and Mid-IR Silicon Photonics Applications High-Speed, Low-Power Alloatti Luca Karlsruhe Seriesin Photonics Communications, & Vol

Total Page:16

File Type:pdf, Size:1020Kb

High-Speed, Low-Power and Mid-IR Silicon Photonics Applications High-Speed, Low-Power Alloatti Luca Karlsruhe Seriesin Photonics Communications, & Vol Karlsruhe Series in Photonics & Communications, Vol. 12 Luca Alloatti High-Speed, Low-Power and Mid-IR Silicon Photonics Applications High-Speed, Low-Power and Mid-IR Photonics Applications Silicon Luca Alloatti Luca Alloatti High-Speed, Low-Power and Mid-IR Silicon Photonics Applications Karlsruhe Series in Photonics & Communications, Vol. 12 Edited by Profs. J. Leuthold, W. Freude and C. Koos Karlsruhe Institute of Technology (KIT) Institute of Photonics and Quantum Electronics (IPQ) Germany High-Speed, Low-Power and Mid-IR Silicon Photonics Applications by Luca Alloatti Dissertation, Karlsruher Institut für Technologie (KIT) Fakultät für Elektrotechnik und Informationstechnik, 2012 Impressum Karlsruher Institut für Technologie (KIT) KIT Scientific Publishing Straße am Forum 2 D-76131 Karlsruhe www.ksp.kit.edu KIT – Universität des Landes Baden-Württemberg und nationales Forschungszentrum in der Helmholtz-Gemeinschaft Diese Veröffentlichung ist im Internet unter folgender Creative Commons-Lizenz publiziert: http://creativecommons.org/licenses/by-nc-nd/3.0/de/ KIT Scientific Publishing 2013 Print on Demand ISSN 1865-1100 ISBN 978-3-7315-0056-8 HighϣSpeed, LowϣPower and MidϣIR Silicon Photonics Applications Zur Erlangung des akademischen Grades eines DOKTOR-INGENIEURS der Fakultät für Elektrotechnik und Informationstechnik des Karlsruher Instituts für Technologie genehmigte DISSERTATION von Dipl.-Phys. Luca Alloatti aus Turin, Italien Tag der mündlichen Prüfung: 20.12.2012 Hauptreferent: Prof. Dr. sc. nat. Juerg Leuthold Korreferenten: Prof. Dr.-Ing. Dr. h. c. Wolfgang Freude Prof. Dr.-Ing. Gert F. Trommer Table of Contents Table of Contents ...................................................................................................................... i Abstract (German) ................................................................................................................... v Preface ..................................................................................................................................... vii Achievements ........................................................................................................................... ix 1 Theoretical Background ............................................................................................. 1 1.1 Silicon-Organic Hybrid (SOH) ElectroǦOptic Modulator ............................................ 1 1.1.1 Motivation ....................................................................................................... 1 1.1.2 Pockels Effect .................................................................................................. 2 1.1.3 Bandwidth of a Modulator .............................................................................. 5 1.1.4 Driving Voltage ............................................................................................... 6 1.2 Interaction Factors in a HighǦIndexǦContrast Waveguide ............................................ 8 1.2.1 Excitation of Modes by Localized Currents .................................................... 8 1.2.2 Generation of a Guided Optical Wave by SecondǦOrder Nonlinear Mixing 10 1.2.3 Attenuation of a Guided Optical Wave ......................................................... 11 1.3 MetalǦInsulatorǦSemiconductor (MIS) Model ............................................................ 13 1.3.1 Definition of the Model ................................................................................. 13 1.3.2 Electron and Hole Densities for Different Temperatures and Gate Fields ... 16 2 HighǦSpeed SiliconǦOrganic Hybrid (SOH) Modulators ...................................... 19 2.1 Introduction ................................................................................................................. 19 2.2 42.7 Gbit/s Electro-Optic Modulator in Silicon Technology ..................................... 19 2.2.1 Abstract ......................................................................................................... 19 2.2.2 Introduction ................................................................................................... 20 2.2.3 SOH Approach .............................................................................................. 20 2.2.4 The Vision ..................................................................................................... 21 2.2.5 The Fabricated Device .................................................................................. 23 2.2.6 Device Characterization ................................................................................ 24 2.2.7 Discussion and Conclusion ........................................................................... 25 2.2.8 Appendix ....................................................................................................... 27 2.3 100 GHz Silicon-Organic Hybrid Modulator ............................................................. 29 2.3.1 Abstract ......................................................................................................... 29 2.3.2 Introduction ................................................................................................... 29 2.3.3 SOH modulator ............................................................................................. 30 2.3.4 Device fabrication and characterization ........................................................ 31 2.3.5 Discussion and conclusion ............................................................................ 33 2.3.6 Appendix ....................................................................................................... 33 ii Table of Contents 3 SecondǦOrder Nonlinear SiliconǦOrganic Hybrid (SOH) Waveguide ................. 35 3.1 Abstract ....................................................................................................................... 35 3.2 Introduction ................................................................................................................. 35 3.3 The Device Concept .................................................................................................... 37 3.4 PhaseǦMatching .......................................................................................................... 38 3.5 Power Levels and Conversion Efficiencies ................................................................ 40 3.6 Conclusion .................................................................................................................. 42 3.7 Appendix ..................................................................................................................... 43 4 SiliconǦOrganic Hybrid (SOH) PhaseǦShifters with Liquid Crystal Cladding ... 45 4.1 Abstract ....................................................................................................................... 45 4.2 Introduction ................................................................................................................. 45 4.3 Design and Fabrication ............................................................................................... 46 4.4 Device Characterization .............................................................................................. 47 4.5 Results ......................................................................................................................... 47 4.6 Conclusions ................................................................................................................. 48 4.7 AC Driving Signal ...................................................................................................... 49 5 Optical Absorption in Silicon due to Charge Inversion/Accumulation ............... 51 5.1 Abstract ....................................................................................................................... 51 5.2 Introduction ................................................................................................................. 51 5.3 Results ......................................................................................................................... 52 5.4 Supplemental information ........................................................................................... 59 6 Summary and Outlook ............................................................................................. 61 Appendix ................................................................................................................................. 63 Recipe for inǦHouse Fabrication of Silicon Rib Waveguides .............................................. 63 Fabrication of Electrodes ..................................................................................................... 65 Vias for Contacting Accumulation/Inversion Layers at Temperatures close to 0 °K .......... 67 Impedance and Propagation Loss from a Vector Network Analyzer (VNA) Measurement 68 Matlab Code for Numerical Integration of MIS Equations .................................................. 70 Sellmeier Equations for Crystalline Silicon and Silicon Dioxide ........................................ 72 Refractive Indices of Si and SiO2 ......................................................................................... 73 Table of Symbols .................................................................................................................... 75 Calligraphic Symbols ..........................................................................................................
Recommended publications
  • Plasmonic Communications : Light on a Wire
    Plasmonic communications : light on a wire Citation for published version (APA): Leuthold, J., Hoessbacher, C., Muehlbrandt, S., Melikyan, A., Kohl, M., Koos, C., Freude, W., Dolores Calzadilla, V. M., Smit, M. K., Suarez, I., Martin, A., Martinez Pastor, J., Fitrakis, E. P., & Tomkos, I. (2013). Plasmonic communications : light on a wire. Optics and Photonics News, 24(5), 28-35. https://doi.org/10.1364/OPN.24.5.000028 DOI: 10.1364/OPN.24.5.000028 Document status and date: Published: 01/01/2013 Document Version: Publisher’s PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication: • A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research.
    [Show full text]
  • Plasmonically Enhanced Graphene Photodetector Featuring 100 Gbd, High-Responsivity and Compact Size
    Plasmonically enhanced graphene photodetector featuring 100 GBd, high-responsivity and compact size Ping Ma,*,1,† Yannick Salamin,*, 1,† Benedikt Baeuerle1, Arne Josten1, Wolfgang Heni1, Yuriy Fedoryshyn1, Alexandros Emboras1 and Juerg Leuthold*,1 1ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zurich, Switzerland †These authors contributed equally to this work. *Corresponding authors: [email protected], [email protected], [email protected] KEYWORDS: Graphene, Photodetector, Plasmonics, Optoelectronics, Silicon, Integrated optics, Waveguide, Optical communications. ABSTRACT. Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and experimentally demonstrate a plasmonically enhanced waveguide-integrated graphene photodetector. The device which combines a 6 m long layer of graphene with field-enhancing nano-sized metallic structures, demonstrates a high external responsivity of 0.5 A/W and a fast photoresponse way beyond 110 GHz. The high efficiency and fast response of the device enables for the first time 100 Gbit/s PAM-2 and 100 Gbit/s PAM-4 data reception with a graphene based device. The results show the potential of graphene as a new technology for highest-speed communication applications. Introduction Graphene is a highly functional two-dimensional (2D) material which has enabled a plethora of new applications and devices ranging from electronics, bioengineering, and photonics. In particular, optoelectronic devices, such as high-speed photodetectors1, take full advantage of graphene’s superior electrical and optical characteristics2, including the ultrafast carrier dynamics3,4, high carrier mobility5, broad spectral photoresponse6-10, and photocarrier multiplication11,12.
    [Show full text]
  • 2014-OFC-Abstracts.Pdf
    Room 102 Room 120 Room 121 Room 122 Room 123 Room 124 Details on all Workshops (both Sunday and Monday) can be found on pages 9-13 12:00–13:30 Lunch (on your own) 13:30–15:30 13:30–15:00 13:30–15:00 13:30–15:30 13:30–15:30 13:30–15:15 M2A • QAM M2B • Network Planning M2C • Coded M2D • Radio-over-Fiber I M2E • DC 100 Gb/s and M2F • Low Loss and Presider: Xiang Zhou; Presider: Zeljko Bulut; Modulation I Presider: Michael Sauer; Beyond Transmission Hollow Core Fibers Google, USA Coriant, USA Presider: Takashi Sugihara; Corning Incorporated, USA Presider: Loukas Paraschis; Presider: Liang Dong; Mitsubishi Electric Cisco Systems, Inc., USA Clemson Univ., USA Corporation, Japan M2A.1 • 13:30 Top-Scored M2B.1 • 13:30 M2C.1 • 13:30 M2D.1 • 13:30 Invited M2E.1 • 13:30 Invited M2F.1 • 13:30 Invited Implementation of 64QAM at 42.66 Network Planning Strategies for Achievable Rates for Four-Dimen- Ultra High-Speed Fiber Wireless The innovations and future needs of Ultralow Loss Fiber Advances, GBaud Using 1.5 Samples per Sym- Next-Generation Flexible Optical sional Coded Modulation with a Bit- Transport, Tetsuya Kawanishi1; 1Na- WDM transport for inter-data-center Masaaki Hirano1; 1Sumitomo Electric 1 1 bol DAC and Demonstration of up Networks, Rosanna Pastorelli , Ga- Wise Receiver, Alex Alvarado , Erik tional Inst of Information & Comm interconnections, Bikash Koley1; Industries Ltd, Japan. Recent realiza- 2 3 2 1 to 300 km Fiber Transmission, Fred briella Bosco , Antonino Nespola , Agrell ; Department of Engineering, Tech, Japan.
    [Show full text]
  • Speakers (PDF)
    Optical Sensing Workshop From THz to X-ray – Inventing the Future ETH, Zürich Hönggerberg 31. März 2016 Photonics Laboratory ETH, Zürich [email protected] | www.photonics.ethz.ch Prof. Dr. Lukas Novotny is a Professor of Photonics at ETH. His research focuses on nanophotonics. He is the author of Principles of Nano-Optics , the holder of six patents, and a fellow of the Optical Society of America and the American Association for the Advancement of Science. Welcome and Introduction Prof. Dr. Lukas Novotny CEO Rainbow Photonics AG, Zürich [email protected] | www.rainbowphotonics.com Dr. sc. nat. Carolina Medrano holds a PhD in physics from the National Autonomous University of Mexico UNAM. From 1984 to 1986 she was a post-doctoral fellow at the Universidad Autonoma de Madrid and from 1987 to 1990 an associate professor at the Institute of Physics of the UNAM. In 1990 she Dr. Carolina joined the Nonlinear Optics Laboratory at ETH-Zurich. She is a co-founder of Medrano Rainbow Photonics AG and is in charge of the executive direction. Advanced THz measurement technology and high-value applications In the last years there has been a boom in the development of narrow band, broadband, and tunable sources of THz radiation. With THz waves it is possible to investigate molecular vibrations, inspect materials non-destructively, use these waves in security and biomedical applications. A road map of THz instrumentation will be presented. Head, Hamamatsu Photonics Innovation Center Europe Adjunct Professor of Optoelectronics, EPFL Deputy Managing Director, Innovation and Entrepreneurship Lab (ieLab), ETH [email protected] | sales.hamamatsu.com Prof.
    [Show full text]
  • Electrically Controlled Plasmonic Switches and Modulators
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 21, NO. 4, JULY/AUGUST 2015 4600408 Electrically Controlled Plasmonic Switches and Modulators Alexandros Emboras, Claudia Hoessbacher, Christian Haffner, Wolfgang Heni, Ueli Koch, Ping Ma, Yuriy Fedoryshyn, Jens Niegemann, Christian Hafner, and Jurg Leuthold, Fellow, IEEE (Invited Paper) Abstract—Plasmonic modulators and switches have recently at- tracted considerable attention because they offer ultracompact size, high bandwidths, and potentially low-power consumption. In this paper, we review and compare the current state of the art of plasmonic switches and discuss the various physical phenomena that are used to perform efficient switching. More precisely, we dis- cuss plasmonic devices based on the thermal effect, the free carrier dispersion effect, the Pockels effect, phase change materials and switching caused by electrochemical metallization. Index Terms—Integrated photonics, plasmonic switches, thermo-plasmonic, free carrier dispersion, Pockels effect, electro- chemical metallization, phase change effect. I. INTRODUCTION N IDEAL optical switch should feature a small footprint, A offer high speed operation and operate with the least pos- sible power consumption. However, to this day, optical switches Fig. 1. Physical effects that have been used to perform plasmonic switching. have relatively large footprints compared to λ and often require significant power. State-of-the art in telecommunications circuit recently demonstrated operation up to 40 Gbit/s on a footprint switches are mostly based on MEMS technology, have foot- of as little as ∼30 μm2 [9]–[11]. However, resonant structures prints of several hundreds of μm2 and consume several Watts of usually are very sensitive to temperature changes and therefore power to be operated [1].
    [Show full text]
  • Magnetoresistive and Thermoresistive Scanning Probe Microscopy With
    SCHRIFTEN DES INSTITUTS FÜR MIKROSTRUKTURTECHNIK AM KARLSRUHER INSTITUT FÜR TECHNOLOGIE (KIT) Band 25 25 TOBIAS MEIER Magnetoresisti ve and Thermoresisti ve Scanning Probe Microscopy with Applicati ons in Micro- and Nanotechnology Magnetoresisti ve and Thermoresisti ve Probe Scanning Microscopy and ve Thermoresisti Magnetoresisti T. MEIER T. Tobias Meier Magnetoresistive and Thermoresistive Scanning Probe Microscopy with Applications in Micro- and Nanotechnology Schriften des Instituts für Mikrostrukturtechnik am Karlsruher Institut für Technologie (KIT) Band 25 Hrsg. Institut für Mikrostrukturtechnik Eine Übersicht aller bisher in dieser Schriftenreihe erschienenen Bände finden Sie am Ende des Buchs. Magnetoresistive and Thermoresistive Scanning Probe Microscopy with Applications in Micro- and Nanotechnology von Tobias Meier Dissertation, Karlsruher Institut für Technologie (KIT) Fakultät für Maschinenbau Tag der mündlichen Prüfung: 22. Mai 2014 Hauptreferent: Prof. Dr. Volker Saile Korreferenten: PD Dr. Hendrik Hölscher, Junior-Prof. Dr. Fabian Pauly Impressum Karlsruher Institut für Technologie (KIT) KIT Scientific Publishing Straße am Forum 2 D-76131 Karlsruhe KIT Scientific Publishing is a registered trademark of Karlsruhe Institute of Technology. Reprint using the book cover is not allowed. www.ksp.kit.edu This document – excluding the cover – is licensed under the Creative Commons Attribution-Share Alike 3.0 DE License (CC BY-SA 3.0 DE): http://creativecommons.org/licenses/by-sa/3.0/de/ The cover page is licensed under the Creative Commons Attribution-No Derivatives 3.0 DE License (CC BY-ND 3.0 DE): http://creativecommons.org/licenses/by-nd/3.0/de/ Print on Demand 2014 ISSN 1869-5183 ISBN 978-3-7315-0253-1 DOI 10.5445/KSP/1000042497 Preface I would like to express my gratitude to the numerous friends, colleagues and institutions for the support and the inspiring discussions during the last years.
    [Show full text]
  • D-ITET Portrait
    Department of Information Technology and Electrical Engineering D-ITET Portrait D-ITET Portrait – contact and information: www.ee.ethz.ch Department Management from left to right: Prof. Juerg Leuthold, Prof. Christian Franck, Prof. John Lygeros, Prof. Klaas Prüssmann Content Welcome to D-ITET Welcome to D-ITET 3 The field of electrical engineering and information technology is having Our Department as part of ETH Zurich 5 an ever-increasing influence on the development of our society. Our faculty 7 Our research: The needs of society in focus 9 Known for our first-class research and top-quality education, all of us Electronics and Photonics 11 at the Department of Information Technology and Electrical Engineering Information and Communication 15 (D-ITET) devote our strengths to addressing complex challenges that Energy 19 confront our world in the fields of information and communication, Biomedical Engineering and Neuroinformatics 23 electronics and photonics, energy, and health. Studying at D-ITET 27 The spirit of discovery and innovation in our team allows us to identify new problems and research areas at an early stage. We also benefit from a strong international network, as D-ITET collaborates worldwide with leading universities, research institutes and industry partners. Finally, our excellent facilities and flexible organisation at ETH Zurich provide a pow- erful framework for research and teaching at D-ITET. Thanks in part to all of these strengths, our graduates are extraordinary individuals who have gained the knowledge and the skills to leave their mark on the world. Today we are a community of nearly 2,000 researchers, students and staff from more than 40 countries.
    [Show full text]
  • Plasmonics—High-Speed Photonics for Co-Integration with Electronics
    Japanese Journal of Applied Physics PROGRESS REVIEW • OPEN ACCESS Plasmonics—high-speed photonics for co-integration with electronics To cite this article: Ueli Koch et al 2021 Jpn. J. Appl. Phys. 60 SB0806 View the article online for updates and enhancements. This content was downloaded from IP address 194.95.141.200 on 26/04/2021 at 14:34 Japanese Journal of Applied Physics 60, SB0806 (2021) PROGRESS REVIEW https://doi.org/10.35848/1347-4065/abef13 Plasmonics—high-speed photonics for co-integration with electronics Ueli Koch1* , Christopher Uhl2, Horst Hettrich3, Yuriy Fedoryshyn1, David Moor1, Michael Baumann1, Claudia Hoessbacher1,4, Wolfgang Heni1,4, Benedikt Baeuerle1,4, Bertold I. Bitachon1, Arne Josten1, Masafumi Ayata1, Huajun Xu5, Delwin L. Elder5, Larry R. Dalton5, Elad Mentovich6, Paraskevas Bakopoulos6, Stefan Lischke7, Andreas Krüger7, Lars Zimmermann7,8, Dimitris Tsiokos9, Nikos Pleros9, Michael Möller2,3, and Juerg Leuthold1,4 1ETH Zurich, Institute of Electromagnetic Fields (IEF), Zürich, Switzerland 2Saarland University, Chair of Electronics and Circuits, Saarbrücken, Germany 3MICRAM Microelectronic GmbH, Bochum, Germany 4Polariton Technologies Ltd., Rüschlikon, Switzerland 5University of Washington, Department of Chemistry, Seattle, WA, United States of America 6NVIDIA networking, Yokneam, Israel 7IHP—Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany 8Technische Universität Berlin, Institute of High-Frequency and Semiconductor System Technologies, Berlin, Germany 9Aristotle University of Thessaloniki, Center for Interdisciplinary Research and Innovation, Thessaloniki, Greece *E-mail: [email protected] Received January 15, 2021; revised February 22, 2021; accepted March 16, 2021; published online April 26, 2021 New high-speed photonic technologies and co-integration with electronics are required to keep up with the demand of future optical communication systems.
    [Show full text]
  • Survey of Photonic and Plasmonic Interconnect Technologies for Intra-Datacenter and High- Performance Computing Communications
    ViewThis metadata,article has been citation accepted andfor publication similar papersin a future at issue core.ac.uk of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/COMST.2018.2839672,brought to you by CORE IEEE Communications Surveys & Tutorials provided by Technische Universität Dresden: Qucosa > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Survey of Photonic and Plasmonic Interconnect Technologies for Intra-Datacenter and High- Performance Computing Communications Christos A. Thraskias, Member, IEEE, Eythimios N. Lallas , Niels Neumann, Laurent Schares, Senior Member, IEEE, Bert J. Offrein, Senior Member, IEEE, Ronny Henker, Dirk Plettemeier, Senior Member, IEEE, Frank Ellinger, Senior Member, IEEE, Juerg Leuthold, Fellow, IEEE, and Ioannis Tomkos, Senior Member, IEEE module, chip to chip and on chip connections. We compare Abstract— Large scale Data Centers (DC) and High different interconnect device modules, including low-energy Performance Computing (HPC) systems require more and more output devices (such as lasers, modulators and LEDs), computing power at higher energy efficiency. They are already photodetectors, passive devices (i.e. waveguides and couplers) consuming megawatts of power, and a linear extrapolation of and electrical circuitry (such as laserdiode drivers, modulator trends reveals that they may eventually lead to unrealistic power drivers, transimpedance and limiting amplifiers). We show that
    [Show full text]
  • Silicon–Organic and Plasmonic–Organic Hybrid Photonics
    Review pubs.acs.org/journal/apchd5 Silicon−Organic and Plasmonic−Organic Hybrid Photonics † ⊥ ‡ ⊥ † ‡ ‡ Wolfgang Heni, , Yasar Kutuvantavida, , Christian Haffner, Heiner Zwickel, Clemens Kieninger, ‡ ‡ † § § Stefan Wolf, Matthias Lauermann, Yuriy Fedoryshyn, Andreas F. Tillack, Lewis E. Johnson, § § ‡ ‡ † Delwin L. Elder, Bruce H. Robinson, Wolfgang Freude, Christian Koos, Juerg Leuthold, § and Larry R. Dalton*, † Institute of Electromagnetic Fields, ETH Zurich, Zurich 8092, Switzerland ‡ Institute of Photonics and Quantum Electronics (IPQ) and Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany § Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States ABSTRACT: Chip-scale integration of electronics and pho- tonics is recognized as important to the future of information technology, as is the exploitation of the best properties of electronics, photonics, and plasmonics to achieve this objective. However, significant challenges exist including matching the sizes of electronic and photonic circuits; achieving low-loss transition between electronics, photonics, and plasmonics; and developing and integrating new materials. This review focuses on a hybrid material approach illustrating the importance of both chemical and engineering concepts. Silicon−organic hybrid (SOH) and plasmonic−organic hybrid (POH) technologies have permitted dramatic improvements in electro-optic (EO) performance relevant to both digital and analog signal processing. For example, the voltage−length product of devices has been reduced to less than 40 Vμm, facilitating device footprints of <20 μm2 operating with digital voltage levels to frequencies above 170 GHz. Energy efficiency has been improved to around a femtojoule/bit. This improvement has been realized through exploitation of field enhancements permitted by new device architectures and through theory-guided improvements in organic electro-optic (OEO) materials.
    [Show full text]
  • Plasmonic Ferroelectric Modulators
    JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 37, NO. 2, JANUARY 15, 2019 281 Plasmonic Ferroelectric Modulators Andreas Messner , Felix Eltes ,PingMa ,StefanAbel , Benedikt Baeuerle , Arne Josten , Wolfgang Heni , Daniele Caimi, Jean Fompeyrine , and Juerg Leuthold , Fellow, IEEE, Fellow, OSA (Invited Paper) Abstract—Integrated ferroelectric plasmonic modulators fea- travelling wave electrodes suffer from high electrical losses at turing large bandwidths, broad optical operation range, resilience high frequencies and the walk-off between electrical and opti- to high temperature and ultracompact footprint are introduced. cal signals [6], both of which ultimately limit the modulation Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250 °C. Mach–Zehnder interferome- bandwidth and power efficiency of the devices. ter modulators with 10-µm-long phase shifters were operated at The need of higher integration densities led to the emerging of 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams the silicon (Si) photonics platform. Si photonics was proposed with extinction ratios beyond 15 dB were found. The fast and robust in 1985 [3]. It relies on silicon-on-insulator (SOI) wafers and devices are apt to an employment in industrial environments. promises to leverage scaling effects similar to the mature CMOS Index Terms—Electrooptic modulators, ferroelectric devices, technology and more compact footprint due to large contrasts high-speed integrated circuits, plasmonics. in refractive indices between adjacent layers. However, Si does I. INTRODUCTION not exhibit the Pockels effect so that Si modulators commonly resort to the plasma dispersion effect. This effect faces a trade- IGH-SPEED, compact and power-efficient electro-optic off between modulation speed and strength and acts on both H (EO) modulators are currently in the spotlight of phase and amplitude of the optical signal.
    [Show full text]
  • CLEO:2020 Program Archive
    About CLEO Technical Conference: 11 - 15 May 2020 Pacific Daylight Time Zone (PDT) The 2020 CLEO Conference: An All-virtual Presentation The CLEO co-sponsors are pleased to announce that the CLEO Technical Conference will be held in an all-virtual, web conference format, 11 - 15 May. Technical sessions will be presented live from the Pacific Daylight Time Zone (PDT) with a recorded archive available later for on-demand viewing. Authors will pay a US$ 100 publishing fee; all others can access the conference at no cost. What Will be Presented Online? 1. All technical sessions (including invited speakers and contributed oral and poster presentations) 2. The two plenary sessions, tutorials, workshops, special symposia and Applications & Technology Topical Reviews 3. Select industry-based, “show floor” programs (to be determined) CLEO Short Courses have been cancelled. The show floor (exhibition) component of the conference will not be presented this year. The Virtual Presentation 1. The virtual program will be presented live using the Zoom web conferencing platform. 2. Presentations will be a hybrid of prerecorded content and live presentations—dependent upon speaker preference. 3. Poster presentations will be offered as PDF files with (tentatively) an accompanying Q&A session. 4. The flexible platform allows for interactive, two-way communications between speakers and audience, and can accommodate individual speakers through multi-participant panels. 5. Technical sessions will be recorded and made available to registrants for on-demand, archived viewing. Schedule and Operations 1. CLEO will be presented with a slight schedule change—now starting on Monday, 11 May. 2. The virtual schedule will follow the published agenda of sessions.
    [Show full text]