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Measurement of the Quality Factor for the Micro Electromechanical System Cantilever Devices by Using Non-Destructive Test Methodology

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Measurement of the Quality Factor for the Micro Electromechanical System Cantilever Devices by Using Non-Destructive Test Methodology Measurement of the Quality Factor for the Micro Electromechanical System Cantilever Devices by Using Non-Destructive Test Methodology by Savas Ozdemir A thesis presented to the University of Waterloo in fulfillment of the thesis requirement for the degree of Master of Applied Science in Mechanical Engineering Waterloo, Ontario, Canada, 2014 © Savas Ozdemir 2014 Thesis Declaration I hereby declare that I am the sole author of this thesis. This is a true copy of the thesis, including any required final revisions, as accepted by my examiners. I understand that my thesis may be made electronically available to the public. ii Abstract Development of the reliability and the performance of Micro Electro Mechanical System (MEMS) devices are the most challenging tasks of scientists and engineers. At the same time, there is a need for advance and more complex testing methods determining functional, performance of the MEMS device and to predict device performance from wafer test. Recent developments in the technologies are giving opportunities to the researchers in developing suitable non-destructive Test (NDT) methodologies for testing and evaluation of the MEMS [1]. Among several challenges regarding the commercialization of MEMS technologies, the focus of the current thesis will be to prove reliability of the MEMS devices, to determine performance criteria such as Q-factor. With regards to reliability and Q-factor; stiction, noise and squeeze film damping are the important occurrences thereby, this report provides very brief general information about these subjects that is to say detailed examination of these are not the main purpose of this thesis. MEMS technology is a promising platform for next generation sensors and actuators. Despite a substantial amount of research in the field, there are still many challenges regarding the management of energy dissipation in MEMS which limits their performance and reliability. Especially integrated MEMS devices require NDT methods to dynamically test the MEMS structures. In the current thesis, MEMS cantilever beams have been used as representative samples. Moreover, information about their performance criteria is provided, and challenges for the next generation of MEMS devices are discussed. A simple method of logarithmic decrement was applied to calculate the Q- factor of several cantilever beams. Furthermore, the project attempts to show how the contacted iii cantilever affects the Q-factor of the MEMS devices. Representative samples have been tested under normal air pressure and vacuum in order to eliminate the effect of squeeze film damping factor. The beam was then stuck as both line and area contact to substrate due to surface tension caused by increasing the high electrostatic forces. This way, the stuck beams were stressed because of the deformation caused by the stiction. The maximum contacted area obtained in this study was 30-40% of length. The Q-factor of the contacted and free standing MEMS cantilever switches was then experimentally evaluated. The project demonstrated an experimental set-up that utilizes a scanning laser Doppler vibrometer (LDV) with a novel calculation methodology to measure the Q-factor. Brief information was provided about the MEMS marketing and application to determine the developmental trend of the MEMS devices. Relatedly, potential future research areas related to the MEMS devices was discussed. Deeper insights on enabling technologies, materials and packaging are beyond the scope of the current thesis. The goal of this thesis is to demonstrate the measurement of Q-factor of the cantilever MEMS devices using NDT methodology and to apply calculation methods which is developed based on the best fitted envelope function methodology. The novelty of this project is to experimentally demonstrate a dramatic increase in the Q-factor quadruples as contact evolves from line to area contact. iv Acknowledgement I am deeply grateful to my thesis advisors, Dr. Mustafa Yavuz and Dr. Eihab Abdul- Rahman for their invaluable academic and technical guidance as well as moral support throughout my master’s program. I appreciate their wisdom, sincerity, insight and abiding trust which supported me to overcome even the hardest times and enjoy it. I owe thanks to Dr. Baris Fidan and Dr. Bo Cui who kindly accept to be my thesis reader and giving their time and Dr. Mahmoud Khater for his contributions. In particular I would like to thanks Dr. Eihab Abdul-Rahman and Begum Ozdemir for a detailed review of my thesis and the correcting the pages which I am extremely grateful. I express my deepest gratitude to my Christie Management Team: Mr. C. Baranieski, Mr. P. Tierney, Mr. C. Stone and Mr. D. Sweeney for motivating me during my program, showing flexibility and tolerance with a smiling face and waving hands in the workplace. Besides, I appreciate Management of Christie Digital Systems Managements for providing financial support during the period in which this research work was carried out. Finally, I wish to thank my family, Nermin, Kadir Basar, Eylul Saime, Begum, and Baris for offering insight to all my life and for their eternal love and trust. v Dedication To my beloved mother and my late (blessed) father, To my kids; Barış, Begüm, Kadir Başar and Eylül Saime vi Glossary Free Molecular Path An instrument used to measure waves through interference patterns. Interferometry is the process which two waves are combined so they can be studied for differences in their patterns. The fields of study where interferometry is used are astronomy, physics, optics, and oceanography. Dopant Chemical term that engineers use to create current paths for semiconductors and other technologies and used in a process called doping. Doping agents include chromium and other similar substances. These are added to semiconductors or other hardware to produce a charged environment. Hermeticity Test The reliability effects of defects in the seal deal mainly with contamination and corrosion mechanisms. In hermetic packages (ceramic or metal) moisture can be locked inside during sealing or can outgas from materials inside. Hermeticity tests are applied to ensure moisture cannot get into ceramic, metal or glass packages which have an internal cavity. Hydrogen Fluoride Release Silicon MEMS devices created using a sacrificial silicon oxide layer, which when removed, "releases" the silicon MEMS structure and allows free movement. Silicon oxide is typically etched by HF: SiO + 4 HF → SiF (g) + 2 H O 2 4 2 Metal Oxide Semiconductor Metal Oxide Semiconductor is a method of creating transistor and consists of three layers, a metal conductor (insulating mostly oxide of substrate) silicon layer, and a semiconductor silicon layer. Micro Electro Mechanical Systems MEMS is the integration of mechanical elements, sensors, actuators, and electronics on a silicon substrate through micro fabrication technology, which studies micro-scale physics and micro fabrication processes for the creation miniature devices. MEMS devices typically range in size between sub-microns to sub-millimeter. vii Monte Carlo Methods Numerical methods that use random numbers to compute quantities of interest. This is normally done by creating a random variable whose expected value is the desired quantity. Then simulates and tabulates the random variable and uses its sample mean and variance to construct probabilistic estimates. Structural Layer A layer of material that forms a physical structure on a substrate a structural layer is releasable when a sacrificial layer separates it from the substrate. Steady State Steady state is the behavior of a vibrating system after it has had plenty of time to settle into a steady response to a driving force. State-of-the-art The term "state of the art" refers to the highest level of general development, as of a device, technique, or scientific field achieved at a particular time. viii Abbreviations MEMS Micro electromechanical systems NDT Non-destructive test methods NDE Non-destructive evaluation IC Integrated circuit RF Radio frequency COT Cost of test CAGR Compound annual growth rate OEE Overall equipment efficiency RFID Radio frequency identification CT Computed tomography BFEF Best fit envelope function MCM Multi-chip module GPS Global positioning system INS Inertial navigation system RMS Root mean square roughness TSV Through-silicon via VIA Vertical interconnects access MUMPs Multi-User MEMS Processes CW Cold weld MOS Metal Oxide Semiconductor HF Hydrogen Fluoride LDV Laser Doppler Vibrometer MSV Microscope Scanning Vibrometer SFD Squeezing Film Damping MIR Magnetic Resonance Imaging ix Contents Glossary vii Abbreviations ix List of Figures xii List of Tables xiii List of Symbols xiv 1 Introduction 1 1.1 MEMS Background ............................................................................................... 2 1.2 Classification of MEMS and Technology .............................................................. 3 1.3 MEMS Challenges and Future ............................................................................... 5 1.3.1 Industrial Challenges of MEMS................................................................... 5 1.3.2 Challenges of MEMS Devices ..................................................................... 6 1.3.3 Future of MEMS .......................................................................................... 7 1.3.4 MEMS Market and Applications ................................................................. 8 1.3.4.1 Automotive Market .........................................................................
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