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Monday Tuesday Wednesday Thursday Friday Time Monday Tuesday Wednesday Thursday Friday JulyJuly 1919 July July 2020 July July 2121 July July 2222 July July 2323

7:30 [7:30] Continental Breakfast, [7:30] Continental Breakfast, [7:30] Continental Breakfast, [7:30] Continental Breakfast, [7:30] Continental Breakfast, Garden Court Garden Court Garden Court Garden Court Garden Court 8:00 [8:00] Short Course Introduction Joe Srour Grand Ballroom III and IV 8:15 [8:15] Hardness [8:15] Conference [8:15] Invited Talk [8:15] Invited Talk [8:15] Invited Talk Assurance for Space Opening Radiological Emergency : The First Is Washington DC Built Systems Grand Ballroom III and IV Response Roles at the Mission to Explore the on Ejecta Deposits of 8:30 Gary Lum CDC Last Planet,And Beyond the 35.5 Million-Year-Old Dr. Paul A. Charp Dr.Alan Stern Chesapeake Bay Crater? Grand Ballroom III and IV Grand Ballroom III and IV Dr. David L. Griscom [8:55] Session A Grand Ballroom III and IV 9:00 Basic Mechanisms of Effects [9:15] Session E [9:15] Session G [9:15] Session J Single-Event Effects: Devices Hardness by Design Radiation Effects in Devices 9:30 and Integrated Circuits and Integrated Circuits [9:45] Break, Garden Court [10:00] Break, Garden Court 10:00 [10:05] Break, Habersham [10:05] Break, Garden Court [10:05] Break, Garden Court [10:15] Microelectronic and Grand Ballroom I and II Piece Part Radiation [10:30] Session A 10:30 Hardness Assurance for [10:35] Session E [10:35] Session H [10:35] Session J (continued) Space Systems (continued) and Facilities (continued) 11:00 Ron Pease

[11:30] Lunch 11:30 [11:35] Lunch [11:35] End of Conference [11:40] Lunch [11:45] Short Course Lunch, 12:00 Garden Court

12:30

1:00 [1:00] Optical Sources, [1:00] Session B [1:00] Session F Fibers, and Photonic Single-Event Effects: Radiation Effects in [1:10] Session I Subsystems Mechanisms and Modeling Photonics Hardness Assurance 1:30 Allan Johnston [1:50] Poster Session 2:00 Kennesaw Room [2:10] Break, Garden Court 2:30 [2:30] Optical Detectors [2:30] Data Workshop and Imaging Arrays Habersham Ballroom Terry Lomheim [2:50] Break, Habersham 3:00 and Grand Ballroom I and II [3:20] Session C 3:30 Space Radiation [3:40] Break, Garden Court Environments [3:55] Solar Cell 4:00 Technologies, Modeling, and Testing [4:15] End of Session Rob Walters [4:25] Session D [4:30 to 10:30] 4:30 Terrestrial Radiation Conference Social Environments and Effects Downtown Atlanta [4:50] End of Session 5:00 [5:05] Wrap-up Celebration [5:00 to 6:30] Radiation Effects Committee [5:15] Exam (for students [5:15] End of Session Open Meeting requesting CEU credit only) 5:30 Grand Ballroom III and IV [5:45] End of Short Course 6:00

7:00 [7:00 to 10:00] [7:00 to 10:00] Conference Reception Industrial Exhibits Garden Court and Reception Grand Ballroom III and IV Habersham Ballroom and Grand Ballroom I and II

i ContentsContents

Chairman’s Invitation ...... 1 Short Course Program ...... 2 Short Course ...... 3 Course Description ...... 3 Hardness Assurance for Space Systems ...... 4 Microelectronic Piece Part Radiation Hardness Assurance for Space Systems ...... 5 Optical Sources, Fibers, and Photonic Subsystems ...... 6 Optical Detectors and Imaging Arrays ...... 7 Solar Cell Technologies,Modeling, and Testing ...... 8 Technical Program ...... 9 Technical Information ...... 9 Invited Speakers ...... 9 Late-News Papers ...... 9 Tuesday, July 20 ...... 10 Session A - Basic Mechanisms of Radiation Effects ...... 10 Session B - Single-Event Effects: Mechanisms and Modeling ...... 13 Session C - Space Radiation Environments ...... 16 Session D - Terrestrial Radiation Environments and Effects ...... 17 Wednesday, July 21 ...... 19 Invited Talk - Radiological Emergency Response Roles at the CDC ...... 19 Session E - Single-Event Effects: Devices and Integrated Circuits ...... 20 Session F - Radiation Effects in Photonics ...... 23 Poster Session ...... 24 Thursday, July 22 ...... 25 Invited Talk - New Horizons: The First Mission to Explore the Last Planet, And Beyond ...... 25 Session G - Hardness by Design ...... 26 Session H - Dosimetry and Facilities ...... 27 Session I - Hardness Assurance ...... 28 Data Workshop ...... 30 Friday, July 23 ...... 32 Invited Talk - Is Washington DC Built on Ejecta Deposits of the 35.5 Million-Year-Old Chesapeake Bay Crater? ...... 35 Session J - Radiation Effects in Devices and Integrated Circuits ...... 36 RESG NEWS ...... 39 Awards ...... 41 2003 NSREC Awards ...... 41 2003 Radiation Effects Award ...... 42 Industrial Exhibits ...... 43 Conference Information ...... 45 Rooms for Side Meetings ...... 45 Messages ...... 45 Continental Breakfast and Coffee Breaks ...... 45 Business Center ...... 45 Registration and Travel ...... 46 Conference Registration ...... 46 On-Site Registration Hours ...... 46 Registration Cancellation Policy ...... 46 Hotel Reservations and Information ...... 47 Airport and Transportation Information ...... 47 2004 IEEE NSREC Technical and Short Course Registration Form ...... 51 2004 IEEE NSREC Activities Registration Form ...... 53 Social Program ...... 55 Short Course Reception ...... 55 Industrial Exhibits Reception ...... 56 Downtown Atlanta Celebration - Conference Social ...... 57 Local Activities ...... 59 Weather and Clothing ...... 61 2004 Conference Committee ...... 62 Official Reviewers ...... 63 Radiation Effects Steering Group ...... 64 2005 Announcement and First Call for Papers ...... 65

ii Chairman’sChairman’s InvitationInvitation

On behalf of the IEEE NPSS Radiation Effects Committee, it is my pleasure to invite you to attend the 41st Annual International Nuclear and Space Radiation Effects Conference to be held July 19-23, 2004, at the Renaissance Waverly Hotel in Atlanta, Georgia. The 2004 Conference will continue the tradition of previous NSRE Conferences by offering an outstanding technical program, a one-day Short Course preceding the technical program, a Radiation Effects Data Workshop, and an Industrial Exhibit. We expect attendance by engineers, scientists, managers, and other interested attendees from all around the world. Some highlights of the Conference are given below; complete details are provided in this booklet. Additional information on the conference can be obtained on the Web at http://www.nsrec.com.

The Technical Program Chairman, Jim Pickel (PRT, Inc.), and his program committee have put together an exceptional set of contributed papers that have been arranged into 10 sessions of oral and poster papers, and a Radiation Effects Data Workshop. The Radiation Effects Data Workshop consists of papers emphasizing radiation effects data on electronic devices and systems and descriptions of new simulation and radiation test facilities. In addition, there are three outstanding invited talks of general interest to which we encourage you to come and to bring your companions.

The theme of this year’s Short Course, organized by Joe Srour (The Corporation), is “Hardness Assurance and Photonics Challenges for Space Systems.” The Short Course will start with Monday morning devoted to systems and piece parts hardness assurance issues for and photonics, with the after- noon focusing on issues confronting the successful use of photonics in space. This is the Silver Anniversary edition of the NSREC Short Course – it will be interesting and informative for attendees of all backgrounds and experience levels.

This year’s Industrial Exhibit, organized by David Meshel (Northrop Grumman) "I would like to thank the volunteers, will permit one-on-one discussions between conference attendees and exhibitors on authors, exhibitors, and attendees who the latest in radiation-hardened and radiation-tolerant electronic devices, radiation have made the IEEE NSREC such an analysis and testing services, and radiation test facilities and test equipment. On exciting and essential meeting for Tuesday evening, attendees and their companions are invited to a reception that those working in the field of radiation showcases the Industrial Exhibit. effects. We look forward to seeing you in Atlanta!" Social events have been planned to give Conference attendees and their guests opportunities to informally discuss radiation effects and to become better acquainted. Dan Fleetwood Jim Kinnison (Johns Hopkins University/Applied Physics Lab), this year’s Local General Chairman Arrangements Chairman, has put together a memorable social program. The high- of the program will be the Wednesday evening social where attendees and their companions can enjoy several popular attractions in downtown Atlanta including the World of Coca-Cola™, Underground Atlanta, and authentic southern cuisine served in Atlanta’s historic railroad depot. We strongly encourage you to register as early as possible for the social events, as some are limited in the numbers we can accommodate.

Atlanta is a great destination for the whole family. Its diverse restaurants feature cuisine from around the globe prepared by world-renowned chefs. Atlanta’s con- venience for travel, wide range of attractions, and southern hospitality make it enjoyable for tourists year-round. The area around the Conference hotel features upscale shopping, easy parking, and a wide range of dining options – downtown Atlanta, Buckhead, and many other attractions are within convenient driving dis- tance. From Atlanta’s role in the Civil War to the celebration of the 1996 Centennial Olympic Games, Atlanta’s historical attractions promise a visit filled with education and entertainment.

Your 2004 IEEE NSREC Committee has been busy working to ensure that this Conference will be technically beneficial and socially rewarding. We are excited about this year’s Conference and look forward to seeing you in Atlanta!

1 ShortShort CourseCourse ProgramProgram

HARDNESS ASSURANCE AND PHOTONICS CHALLENGES FOR SPACE SYSTEMS

GRAND BALLROOM III AND IV - MONDAY, JULY 19

7:30 AM REGISTRATION/CONTINENTAL BREAKFAST

8:00 AM SHORT COURSE INTRODUCTION Joe Srour The Aerospace Corporation

PART 1 – HARDNESS ASSURANCE CHALLENGES

8:15 AM HARDNESS ASSURANCE FOR SPACE SYSTEMS Gary Lum Lockheed Martin Space Systems

9:45 AM BREAK (GARDEN COURT)

10:15 AM MICROELECTRONIC PIECE PART RADIATION HARDNESS ASSURANCE FOR SPACE SYSTEMS Ron Pease RLP Research

11:45 AM SHORT COURSE LUNCHEON (GARDEN COURT)

PART 2 – PHOTONICS IN SPACE RADIATION ENVIRONMENTS: CHALLENGES AND APPROACHES

1:00 PM OPTICAL SOURCES, FIBERS, AND PHOTONIC SUBSYSTEMS Allan Johnston Jet Propulsion Laboratory

2:10 PM BREAK (GARDEN COURT)

2:30 PM OPTICAL DETECTORS AND IMAGING ARRAYS Terry Lomheim The Aerospace Corporation

3:40 PM BREAK (GARDEN COURT)

3:55 PM SOLAR CELL TECHNOLOGIES, MODELING, AND TESTING Rob Walters Naval Research Laboratory

5:05 PM WRAP-UP

5:15 PM EXAM (only for students requesting CEU credit)

5:45 PM END OF SHORT COURSE

2 ShortShort CourseCourse

COURSE This one-day Short Course will address two important topics and their related DESCRIPTION challenges for present and future space systems: hardness assurance and photonics. Assuring space-system radiation hardness involves many technical considerations. One lecturer will provide an overview of the techniques used to assure that hardness is maintained at the system level throughout the program life-cycle. Related challenges and potential solutions will also be addressed. A second speaker will focus on hardness assurance for electronic components. The second major topic at the Short Course is photonics for space systems. Nearly all present and envisioned space systems include photonic elements and subsystems, with key examples being solar arrays, optical sources and detectors, and optical fibers. To make use of current and emerging photonic components, designers must have knowledge of their radiation response and any associated limitations. Three speakers at the 2004 NSREC Short Course will address key effects of radiation on and challenges for photonics in space. Their comprehensive talks will include optical sources, detectors and imagers, fibers, solar cells, and photonic subsystems. This Short Course will provide a unique and cohesive set of talks for designers, radiation effects engineers, components specialists, and other technical and management personnel involved in developing space systems. Joe Srour of the Aerospace Corporation, the 2004 Short Course Chairman, has organized an exceptionally qualified team of lecturers to address these topics. This is a unique opportunity for NSREC attendees to benefit from the expertise of this world-class team. Each lecturer will provide sufficient background information to allow participants to appreciate the basics. Lectures will also include recent results and emerging technologies. The Short Course will benefit both new and experienced engineers, scientists, and managers.

CONTINUING EDUCATION As in previous short courses, 0.6 CEUs endorsed by the IEEE and the International UNITS (CEUs) Association for Continuing Education and Training (IACET) will be available to qualified students. The IEEE is an authorized CEU sponsor member of the IACET. IEEE guidelines for offering CEU credit will be followed. Thus, to qualify for CEU credit a person must be a registered attendee of the Short Course and must pass a written examination with a score of 75% or greater. The examination will be given immediately after the last segment of the Short Course, will be open book, and will consist of approximately 20 multiple-choice questions covering the material presented in the Short Course. A certificate of completion will be mailed to all students who request and qualify for it.

SHORT COURSE CHAIRMAN Joe Srour is employed in a senior engineering position at the Aerospace Corporation. Prior to joining Aerospace, he worked for TRW where he managed the Radiation and Survivability Engineering organization. Before TRW, he worked for the Northrop Corporation where he held various technical and managerial positions. Much of his technical work has focused on nuclear and space radiation effects on materials, devices, circuits, and systems. He has also made technical contributions in the areas of optical detectors, device physics, and microelectronics. Joe is a Fellow of the IEEE and is a member of Sigma Xi and Tau Beta Pi. He is the author of one technical book and 49 articles published in refereed technical journals. He received the Outstanding Paper Award six times for papers presented at the IEEE Nuclear and Space Radiation Effects Conference, and received the Meritorious Paper Award twice for papers presented at that same conference. He holds two U.S. patents. Joe received bachelors, masters, and Ph.D. degrees in electrical engineering from the Catholic University of America, Washington, DC.

Joe Srour Short Course Chairman

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HARDNESS ASSURANCE FOR SPACE SYSTEMS Gary Lum Lockheed Martin Space Systems

Gary Lum, Lockheed Martin Space Systems, will present a comprehensive review of hardness assurance for space systems. He will describe the space radiation environ- ment and give an overview of the key effects of that environment on electronics. System hardening approaches will be addressed, such as part selection, shielding, filtering, redundancy, current limiting, and software techniques. Radiation testing Gary Lum received a B.A. in considerations will be described at the part, board, and subsystem levels. Dr. Lum physics at the University of will also discuss analytical and modeling techniques for assuring system hardness, California, Berkeley and M.S and management of hardness assurance, and emerging issues and challenges and their Ph.D. in physics at the University potential solutions for hardened space systems. of Oregon. He was a graduate student under Dr. C. Wiegand and Prof. E. Segré (Nobel Laureate) Introduction at Lawrence Berkeley National Laboratory. After joining Lockheed Space Radiation Environment Missiles System Division in 1980, Composition of the Gary headed the radiation effects Generation of Space Radiation Requirements analysis group. He joined Intel Role of Earth’s Geomagnetic Field and Location of Space Particles Corporation in 1984 to work as a Van Allen Radiation Belts device physicist. In 1986, he re- Solar Event Activities turned to Lockheed where his areas Environment Highlights of study included IC fabrication processes, modeling of CMOS and Radiation Requirements Derivation bipolar technologies, and radiation effects in semiconductor devices. Radiation Effects In 1988, he received the AIAA Passage of Radiation Through an Electronic Device award for Best Design Engineer. Physics Gary has published over 20 Key / Degraded Parameters technical papers. He has served in and Effects various technical and management Future Radiation Trends in Electronic Technologies positions for the IEEE Nuclear and Single Event Latch-up Space Radiation Effects Conference Single Event Upset and the Hardened Electronics and Single Event Transients Radiation Technology Conference, Total Ionizing Dose Effects and serves as a technical paper Proton Displacement Damage reviewer for both conferences. At Lockheed Martin, he provides Space Environment Modeling Tools recommendations and technical System Hardening Techniques guidance to designers, program Comparison of Commercial versus Hardened Parts managers and customers. Presently, SOI Future Technology he is an Engineering Fellow sup- Parts Selection Process porting space programs by provid- ing training and technical guidance Radiation Test Facilities in parts selection and in the design of hardened systems. He lectures Hardness Assurance Management Plan at Stanford University and also conducts studies to understand Emerging Issues radiation effects on electronics and to mitigate those effects in Conclusion and missile applications.

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MICROELECTRONIC PIECE PART RADIATION HARDNESS ASSURANCE FOR SPACE SYSTEMS Ron Pease RLP Research

Ron Pease, RLP Research, will discuss electronic piece-part hardness assurance for space systems. He will define key concepts and terminology and give an historical overview of the evolution of parts hardness assurance methods. Key hardness assurance documentation for users will be identified. He will present a detailed Ronald L. Pease received the B. S. description of the currently employed approach. Parts qualification, lot acceptance, in Physics from Indiana University and radiation lot acceptance testing will be addressed as well as exceptions and in 1965 and pursued graduate limitations in practice. Parts hardness assurance challenges for space systems will studies in Physics at the University be discussed and recommendations will be given. of Washington in 1966. He has been active in radiation effects characterization, modeling, Introduction analysis and hardness assurance for 38 years, having worked at Background NAVSEA Crane (1966-1977), BDM (1977-1979), and Mission Research The “Traditional” Piece-Part Hardness Assurance Approach Modified for Corp. (1979-1993). Mr. Ron Pease Today’s Systems is the president and sole employee Radiation Environment Specifications of RLP Research, which was Failure Definitions formed in 1993. He is a technical Probability of Survival and Confidence advisor and senior scientist on sev- Piece-Part Radiation Characterization Data eral DoD contracts that address Calculation of RDM radiation response and hardness Categorization assurance, the most recent being in Parts Categorized as Unacceptable the areas of Enhanced Low Dose Parts Categorized as Hardness Critical and Hardness Noncritical Rate Sensitivity and Single Event Radiation Lot Acceptance Testing (with examples) Transients in bipolar linear circuits. • Attributes Testing Mr. Pease is very active in the IEEE • Variables Testing NPSS having held every technical position for the Nuclear and Space Challenges for Piece-Part Hardness Assurance for Space Systems Radiation Effects Conference Knowing the Relevant Details of the Part when it is Commercial including serving as Conference Knowing the Part Response to the Radiation Environment in Chairman in 2000. He has served the Application as a Short Course Instructor and Knowing the Radiation Environment Short Course Chairman for the Knowing How to Quantify the Results of Radiation Testing NSREC, as well as a short course instructor at the Nuclear Science Piece-Part Hardness Assurance Management Symposium, the Commercialization of and Space Electronics and . He has over 90 technical publications in the area of radiation effects in electronics and has received several NSREC Outstanding and Meritorious Paper Awards, the most recent being the Outstanding Conference Paper Awards in 2002 and 2003.

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OPTICAL SOURCES, FIBERS, AND PHOTONIC SUBSYSTEMS Allan Johnston Jet Propulsion Laboratory

Allan Johnston, Jet Propulsion Laboratory, will address basic and applied aspects of space radiation effects on photonics, including optical sources, optical fibers, and photonic subsystems. For optical sources, he will include material properties, effects on light-emitting and laser diodes, advanced devices, and annealing behavior. For Allan Johnston received B.S. optical fibers, he will address absorption effects, testing approaches, and fiber selec- and M.S. degrees in physics from tion for space systems. He will also cover radiation effects on photonic subsystems the University of Washington. for space applications, including optical links, optical transmitters and receivers, and He began his career at optical communication systems. Aerospace Corporation, performing research studies on radiation effects in microelectronics and Introduction and Background optoelectronics. He joined the Jet Some Basic Principles of Optics Propulsion Laboratory in 1992 Some Important Semiconductor Properties where he supervises applied research on radiation effects in Optical Emitters microelectronics for space applica- Light-Emitting Diodes tions. His technical interests Laser Diodes include and single-event upset effects in semiconductor Radiation Environments and devices, with emphasis on Space Environments low-dose-rate effects, latchup, and Special Environments: Nuclear Reactors and Particle Accelerators space applications of advanced Fundamental Interactions technologies. Related interests Energy Dependence of Displacement Damage include determining how new Radiation Testing with device technologies and device scaling will influence their Radiation Damage in Optical Emitters radiation performance and Light-Emitting Diodes reliability in space as well as Laser Diodes radiation effects on optoelectronics. He has authored more than 80 Radiation Damage in Detectors papers in refereed journals. He received the Outstanding Paper Radiation Damage in Optical Fibers Award at the IEEE Nuclear and Space Radiation Effects Conference Optical Subsystems (NSREC) in 1999, Meritorious Digital Optocouplers: A Very Basic Subsystem Paper Awards in 1995 and 1996, Optical Receivers and the Distinguished Poster Paper Award in 1987. He has been active Summary in the IEEE NSREC, serving as Short Course Instructor for four conferences, Local Arrangements Chairman, Short Course Chairman, and Awards Chairman. He was Technical Program Chairman for the 1997 NSREC and General Chairman for the 2003 NSREC. He is a Fellow of the IEEE.

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OPTICAL DETECTORS AND IMAGING ARRAYS Terry Lomheim The Aerospace Corporation

Terry Lomheim, Aerospace Corporation, will discuss radiation effects on visible and detectors and arrays. For visible imagers, he will describe today’s leading technologies, followed by consideration of the key effects of the space radiation environment. He will include displacement damage effects, effects, and radiation-induced in visible arrays, plus an overview of array Terrence S. Lomheim is a hardening approaches and technology trends. Dr. Lomheim will address similar Distinguished Engineer in the topics for infrared detectors, with emphasis on the effects of total ionizing dose, Systems Subdivision, displacement damage, and ionization-induced noise. The Aerospace Corporation, El Segundo, California, where he has worked since 1978. He received Overview of Optical Detectors and Imagers a Ph.D. in Physics from the University of Southern California Space Radiation Environments of Interest in 1978. He has performed detailed experimental evaluation of the Radiation Effects on Visible Imaging Arrays electro-optical properties, imaging Visible Imager Technologies performance capabilities, and Displacement Damage Effects radiation effects sensitivities of • Dark Current visible scanning and staring CCD • Charge Transfer Efficiency and CMOS devices and hybrid • Annealing infrared focal planes for a variety Ionizing Radiation Effects of DoD and Civil Programs. He Hardening Approaches has also been involved in the Current Trends design, performance assessment, modeling and diagnostics of Radiation Effects on Infrared Detector Arrays point-source detection, broadband, Infrared Detector Technologies multispectral, and hyperspectral Ionization-induced Transient Response imaging electro-optical sensor Permanent Degradation systems in the visible through longwave spectral regions. Dr. Modeling of Radiation-Induced Transients in Focal-Plane Arrays Lomheim has authored and Simulation of Proton Transient Effects co-authored 38 publications in Recent Updates to Proton Transient Effects Simulation the areas of applied optics, focal Impact of , Shielding, and plane technology, and imaging sensor performance and has been a Radiation Effects on MOS Readout Integrated Circuits (ROIC) part-time instructor in the physics Total Dose Hardening of Visible Imager ROIC Designs department at the California State Approaches to ROIC Design for Infrared Imagers University, Dominquez Hills Infrared ROIC Circuit Design for TID Hardness since 1981. He is a Fellow of The ROIC Hardening by Design for Single Event Effects International Society for Optical Engineering (SPIE) and is a Summary and Concluding Remarks member of the Optical Society of American and the American Physical Society.

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SOLAR CELL TECHNOLOGIES,MODELING, AND TESTING Rob Walters Naval Research Laboratory

Rob Walters, Naval Research Laboratory, will address basic and applied aspects of radiation effects on solar cells. He will discuss device physics and the mechanisms of radiation-induced degradation and review leading cell technologies for present and future applications. Dr. Walters will describe modeling techniques used to Robert Walters received his Ph.D. predict solar-cell degradation in space, including EQFLUX and SAVANT. Simulation in Applied Physics from the testing approaches will be discussed, including test facilities and particle choices. University of Maryland Baltimore He will give an overview of design concepts for hardened solar arrays, such as array County in 1994. He has worked at sizing and end-of-life performance. the US Naval Research Laboratory since 1991. His area of expertise is in radiation effects in semiconductor Overview of Radiation Effects on Solar Cells materials and devices, and his Solar Cell Device Physics primary area of focus is radiation Radiation-Induced Degradation Mechanisms effects in solar cells for space appli- cations. His research group has Solar Cell Technologies produced a new technique for Single-Junction Crystalline Semiconductor Solar Cells modeling the effect of irradiation Multijunction Solar Cells on semiconductor devices, which Thin-Film Technologies has gained international acceptance. His group has also produced Modeling Techniques ground-breaking work on new JPL Method space solar cell technologies, and NRL Method they are currently building a solar Correlating RDCs with NIEL cell space experiment to be flown Case of Nonuniform Damage Deposition on the International Space Station. In addition to space solar cell On-Orbit Solar Cell Performance Predictions research, Dr. Walters is also Environment Calculations directing a project to develop Shielding Calculations advanced photovoltaic devices for • JPL Shielding Calculations micro-power systems. The end • NRL Shielding Calculations product will be a self-powered Solar Cell Performance Predictions optical data link for use in a Mission Examples distributed autonomous sensor system. Dr. Walters lives in Solar Array Design Alexandria, VA with his beautiful wife, PJ, and two wonderful Testing Approaches daughters, Sarah who is 13, and Molly who is 8. Summary

8 TechnicalTechnical ProgramProgram

TECHNICAL The NSREC technical program will consist of contributed oral and poster papers, INFORMATION three invited papers, and a data workshop. All oral papers will be 12 minutes in length with an additional 3 minutes for questions. The technical sessions and chairpersons are:

Basic Mechanisms of Radiation Effects Chair: Shyam Khanna, Defence Research Establishment / Canada Single-Event Effects: Mechanisms and Modeling Chair: Ken Galloway, Vanderbilt University Space Radiation Environments Chair: Mike Xapsos, NASA Goddard Space Flight Center Terrestrial Radiation Environments and Effects Chair: Phillipe Roche, STMicroelectronics / France Single-Event Effects: Devices and Integrated Circuits "The NSREC 2004 technical program Chair: Bill Heidergott, General Dynamics will showcase current research and Radiation Effects in Photonics development in nuclear and space radi- Chair: Gordon Hopkinson, SIRA Electro-Optics Ltd. / United Kingdom ation effects. This conference provides Hardness by Design a focused display of technical progress Chair: Harald Schone, Air Force Research Laboratory from the international community in understanding and mitigating radia- Dosimetry and Facilities tion effects on microelectronics, and Chair: Dave Roth, Johns Hopkins University Applied Physics Laboratory provides a forum for technical and Hardness Assurance social exchange between attendees." Chair: Mike Maher, National Semiconductor Radiation Effects in Devices and Integrated Circuits Jim Pickel, PRT, Inc. Chair: Marion Rose, Jaycor/Titan Systems Technical Program Chairman

POSTER SESSION Papers that are most effectively presented visually with group discussion will be displayed as posters from 12:00 PM Tuesday, July 20 through 11:45 AM Friday, July 23. Authors will be available to discuss their work during the Poster Session Wednesday, July 21. The poster chair is Mark Hopkins, The Aerospace Corporation.

RADIATION EFFECTS Papers in the data workshop are intended to provide radiation response data to DATA WORKSHOP scientists and engineers who use electronic devices in a radiation environment, and to designers of radiation-hardened systems. Workshop posters can be viewed from 12:00 PM Tuesday, July 20 through 11:45 AM Friday, July 23. Authors will be avail- able to discuss their work during the Data Workshop Session Thursday, July 22. A copy of the Workshop Record will be mailed to all registered attendees after the conference. The data workshop chair is Jeff Black, Mission Research Corporation.

INVITED SPEAKERS Three invited speakers will give stimulating and entertaining presentations during the conference on subjects outside the radiation effects area. Dr. Paul Charp of the Centers for Disease Control and Prevention (CDC) will discuss the role of the CDC in radiological emergencies. Dr. Alan Stern of Southwest Research Institute will describe “New Horizons,” the first mission in NASA’s flagship New Frontiers program to explore the planets robotically. Dr. David Griscom of impactGlass Research International will present evidence that Washington DC is built on asteroid ejecta deposits of the 35.5 million-year-old Chesapeake Bay Crater.

LATE-NEWS PAPERS A limited number of late news papers will be accepted and included in the Poster Session and the Radiation Effects Data Workshop. The deadline for submitting late news papers is June 1, 2004. Detailed instructions for submitting a late-news summary to the technical program committee are available on the NSREC website at www.nsrec.com. 9 TechnicalTechnical ProgramProgram TuesdayTuesday

8:15 AM OPENING REMARKS GRAND BALLROOM III and IV Dan Fleetwood, Vanderbilt University, General Chairman

8:20 AM AWARDS PRESENTATION Ron Schrimpf, Vanderbilt University, Radiation Effects Steering Group Chairman

8:50 AM TECHNICAL SESSION OPENING REMARKS Jim Pickel, PRT, Inc., Technical Program Chairman

SESSION A BASIC MECHANISMS OF RADIATION EFFECTS 8:55 AM SESSION INTRODUCTION Chair: Shyam Khanna, Defence Research Establishment / Canada

A-1 The Effects of Processing on Radiation-Induced Trapped Charge 9:00 AM Build-Up and Annealing in Devices with High-K Gate Dielectrics James A. Felix, Marty R. Shaneyfelt, James R. Schwank, Paul E. Dodd, Sandia National Laboratories; Daniel M. Fleetwood, Vanderbilt University; Evgeni P. Gusev, Chris D'Emic, IBM

We examine the effects of processing on the build-up and annealing of radiation-induced trapped charge in high-K gate dielectrics. Post-deposition anneals modify the CV hysteresis, which is inversely proportional to the radiation-induced midgap voltage shift.

A-2 Drain Current Decrease in After Heavy Irradiation 9:15 AM Andrea Cester, Simone Gerardin, Salvatore Cimino, Alessandro Paccagnella, University of Padova; James R. Schwank, Gyorgy Vizkelethy, Sandia National Laboratories; Gabriella Ghidini, STMicroelectronics

We present new original experimental results on the prompt and latent effects produced by heavy ion irradiation on ultra-thin gate oxide MOSFETs affecting drain and gate current as a function of the aspect ratio.

A-3 Effects of Hydrogen Motion on Interface Trap Formation and Annealing 9:30 AM S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, Vanderbilt University

We combine first-principles calculation and statistics of hydrogen motion to show that interface trap formation and annealing processes are strongly affected by temperature and bias. We find good agreement with experimental results.

A-4 Non-Uniform Total-Dose-Induced Charge Distribution in 9:45 AM Shallow-Trench Isolation Oxides Marek Turowski, Ashok Raman, CFD Research Corporation (CFDRC); Ron Schrimpf, Vanderbilt University

A new approach for modeling the radiation-induced charge distribution in shallow trench isolation structures shows that much less charge is trapped near the top of the trench. This non-uniformity significantly affects the measured leakage current.

10:00 – 10:30 BREAK GARDEN COURT

10 TechnicalTechnical ProgramProgram TuesdayTuesday

A-5 Annealing Behavior of Linear Bipolar Devices With 10:30 AM Enhanced Low-Dose-Rate Sensitivity Marty R. Shaneyfelt, James R. Schwank, James A. Felix, Paul E. Dodd, Sandia National Laboratories; Daniel M. Fleetwood, Vanderbilt University; Ronald L. Pease, RLP Research; Michael C. Maher, National Semiconductor

The annealing behavior of total dose degradation in ELDRS sensitive devices is examined. The results have implications for hardness assurance testing and give insight into the mechanisms for ELDRS in linear bipolar ICs.

A-6 Radiation Induced Base Current Broadening Mechanisms in 10:45 AM Gated Bipolar Devices Xiao Jie Chen, Hugh J. Barnaby, University of Arizona; Ronald L. Pease, RLP Research; Ronald D. Schrimpf, Vanderbilt University; Dale G. Platteter, Gary W. Dunham, NAVSEA

Ionizing radiation experiments on gated lateral BJTs show a broadening in the peak base current profile after irradiations. The primary mechanism for this effect is identified as the charged state of interface traps in the bipolar base field oxide.

A-7 Irradiation Effects on Nanocrystal Quantum Dots 11:00 AM Used in Bio-Sensing Applications Rosa Leon, Jay Nadeau, Ken Evans, Jet Propulsion Laboratory; Tanya Paskova, Bo Monemar, Linkoping University

Effects of electron irradiation on some of the optical properties of biologically compatible CdSe nanocrystals are investigated using the technique of cathodoluminescence. Dose rate dependences were examined and faster degradation at cryogenic temperature was found.

A-8 Displacement Damage Induced Catastrophic Second Breakdown in 11:15 AM SiC Power Diodes Leif Scheick, Heidi Becker, Luis Selva, JPL/NASA

A novel catastrophic breakdown mode in reversed biased Schottky SiC diodes has been seen for low LET particles. The mechanism correlates with second breakdown in diodes due to increased leakage and assisted charge injection from incident particles.

POSTER PAPERS

PA-1 Limits To The Application Of NIEL For Damage Correlation Scott R. Messenger, SFA, Inc.; Edward A. Burke, Consultant; Geoffrey P. Summers, Robert J. Walters, US Naval Research Laboratory

The effects of incident particle range, straggling, primary recoil atom range and target volume on the expected applicability of nonionizing energy loss as a basis for correlating displacement damage effects are quantified.

PA-2 Nonionizing Energy Loss Insoo Jun, JPL/NASA; M. Xapsos, NASA/GSFC; E. Burke, Consultant

A method previously developed for proton NIEL calculations is extended to alpha particles. The method uses the ZBL screened potential for Coulomb interactions and the MCNPX “thin target approximation” for nuclear interactions.

11 TechnicalTechnical ProgramProgram TuesdayTuesday

PA-3 Czochralski Detectors Irradiated with High and Low Energy Protons E. Tuovinen, J. Härkönen, P. Luukka, Lassila-Perini, E. Tuominen, D. Ungaro, Helsinki Institute of Physics; Z. Li, Brookhaven National Laboratory; E. Verbitskaya, V. Eremin, Ioffe Physico-Technical Institute of Russian Academy of Sciences; A. Pirojenko, I. Riihimaki, A. Virtanen, Accelerator Laboratory, Jyvaskyla University; A. Furgeri, F. Hartman, University of Karlsruhe

We have irradiated Czochralski silicon and Float Zone silicon detectors with 10 MeV and 24 GeV/c protons. In terms of evolution of depletion voltage and beta-factor Czochralski Silicon was found to be more radiation hard.

PA-4 Electron-Hole Pairs Spatial Distributions Induced by Electrons and Protons in SiO2 Michael Murat, Avraham Akkerman, Joseph Barak, Soreq NRC

The spatial distribution of electron-hole pairs in SiO2, induced by electrons and protons, was calculated. The results show a spur-like track structure, which can be used for estimation of the charge-yield in SiO2.

PA-5 Effect of a Thermal Annealing on the Radiation Induced Degradation on Bipolar Technologies when the Dose Rate is Switched from High to Low S. Ducret, F. Saigné, J. R. Vaille, L. Dusseau, Université Montpellier II; J. Boch, Université de Nice Sophia-Antipolis; J. P. David, CERT/ONERA; R. Ecoffet, Centre National d’Etudes Spatiales

The influence of electrostatic barrier in the oxide bulk on the radiation induced degradation of bipolar technologies is investigated using a thermal annealing performed before switching the dose rate from high to low.

PA-6 Total Dose Effect on Bipolar ICs: Characterization of the Saturation Region Jerome Boch, Philibert Iaconni, Université de Nice; Frederic Saigné, Samuel Ducret, Laurent Dusseau, Université Montpellier II

The total-dose response of bipolar ICs is investigated. A recovery of the degradation is observed for high total-dose in the saturation region. The circuit response in this region is discussed based on room temperature annealing.

PA-7 Charge Trapping in Irradiated SOI Wafers Measured by Second Harmonic Generation Bongim Jun, Yelena V. White, Robert Pasternak, Sergey N. Rashkeev, Ronald D. Schrimpf, D. M. Fleetwood, N. H. Tolk, Vanderbilt University; Francois Brunier, Nicolas Bresson, SOITEC, France; S. Cristoloveanu, ENSERG, France

Total dose effects on SOI wafers are studied via optical second harmonic generation. Radiation-induced oxide and interface traps affect the local interface fields, which are characterized optically and compared with electrical results.

PA-8 Charge Trapping and Low Frequency Noise in SOI Buried Oxides H. D. Xiong, B. Jun, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University; J. R. Schwank, Sandia National Laboratories

A detailed study of 1/f noise, temperature dependence of charge trapping, and radiation response of SOI nMOSFET shows that charge exchange with shallow electron traps in the buried oxide occurs mostly via tunneling.

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PA-9 The Effects of Radiation on 1/f Noise in Complementary (npn + pnp) SiGe HBTs Enhai Zhao, Akil K. Sutton, Becca M. Haugerud, John D. Cressler, Georgia Tech; Paul W. Marshall, Robert A. Reed, NASA/GSFC; Badih El-Kareh, Scott Balster,

The effects of gamma irradiation on the 1/f noise characteristics of SiGe HBTs are presented. Irradiation damage causes higher 1/f noise for npn transistors. However, it has no effects on pnp transistors.

11:30 AM – 1:00 PM LUNCH

SESSION B SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING 1:00 PM SESSION INTRODUCTION Chair: Ken Galloway, Vanderbilt University

B-1 Charge Enhancement Effects in NMOS Bulk Transistors Induced by 1:05 PM Heavy Ion Irradiation V. Ferlet-Cavrois, A. Torres, P. Paillet, J. Baggio, D. Lambert, CEA; G. Vizkelethy, J. R. Schwank, M. R. Shaneyfelt, Sandia National Laboratories

This paper analyzes charge enhancement effects observed on OFF-state NMOS bulk transistors. This phenomenon is due to the triggering of the bipolar structure inherent to MOS transistors and has implications for charge collection modeling.

B-2 New Experimental Findings for Single-Event Gate Rupture in 1:20 PM MOS and Linear Devices G. K. Lum, N. Boruta, L. Robinette, Lockheed Martin Space Systems Company; M. R. Shaneyfelt, J. R. Schwank, P. E. Dodd, Sandia National Laboratories

This paper presents new experimental findings in understanding the basic mechanisms of SEGR in MOS capacitors and analog devices, dependence of SEGR on ion energy, and independence of SEGR on oxide defects, polarity biasing and ionizing dose.

B-3 Angular Dependence of Multiple-Bit Upsets Induced by Protons in 1:35 PM a 16 Mbit DRAM Stephen Buchner, QSS/NASA/GSFC; Arthur B. Campbell, Naval Research Laboratory; Robert Reed, NASA/GSFC; Paul Marshall, Consultant to NASA/GSFC

The number of proton-induced double-bit upsets observed in a 16 Mbit DRAM increased with increasing angle of incidence. The enhancement was greater for lower energy protons than for higher energy protons.

B-4 Production and Propagation of Single-Event Transients in 1:50 PM High-Speed Digital Logic Integrated Circuits Paul E. Dodd, Marty R. Shaneyfelt, Sandia National Laboratories

The production and propagation of single-event transients in scaled CMOS digital logic circuits are examined. Scaling trends to the 0.13 µm technology node are explored using 3D mixed-level simulations, including both bulk CMOS and silicon-on- technologies.

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B-5 Single-Event Transient Pulse Widths in Digital Microcircuits 2:05 PM Matthew J. Gadlage, NAVSEA Crane and Vanderbilt University; Ronald D. Schrimpf, Vanderbilt University; Paul H. Eaton, Joseph M. Benedetto, Mission Research Corporation; Thomas L. Turflinger, NAVSEA Crane

Data from a unique test chip designed to look at single event transients is compared with simulations to find the width of the transient pulses. The implication of these pulse widths is also discussed.

B-6 SEU Calculations for Induced Alphas in Sensitive RAMs 2:20 PM F. Wrobel, P. Iacconi, LPES, Université de Nice; J-M. Palau, B. Sagnes, F. Saigné, CEM2, Université de Montpellier; M-C. Calvet, EADS-LV

We propose an analytical approach to investigate the effect of long ranges particles on SEU cross section. For accurate calculations in sensitive RAMs, alphas should be considered up to 100 µm from the sensitive volume.

B-7 3-D Simulation of Heavy-Ion Induced Charge Collection in 2:35 PM SiGe HBTs on SOI Muthubalan Varadharajaperumal, Guofu Niu, Auburn University; John D. Cressler, Georgia Tech; Robert A. Reed, Paul W. Marshall, NASA/GSFC; Alvin J. Joseph, IBM

This paper presents 3-D simulation of heavy-ion induced charge collection in SiGe HBT on SOI substrate, as well as comparisons with bulk SiGe HBT.

POSTER PAPERS

PB-1 Transient Conductive Path Induced by a Single Ion in 10 nm SiO2 Layers Giorgio Cellere, Alessandro Paccagnella, DEI, Padova University (I); Angelo Visconti, Mauro Bonanomi, STMicroelectronics, Agrate Brianza (I); Andrea Candelori, INFN, Padova (I)

The impact of a high LET ion on a Floating Gate Flash cell (or isolated metal line) causes the onset of a temporary (10 - 14 s) conductive path across SiO2. A semi-empirical model accurately describes our results.

PB-2 Spatial and Temporal Characteristics of Energy Deposition by Protons and Alpha Particles in Silicon Aaron S. Kobayashi, Andrew L. Sternberg, Lloyd W. Massengill, Ronald D. Schrimpf, Robert A. Weller, Vanderbilt University

Spatial and temporal distributions of energy deposition in silicon by protons and alphas, including contributions from discrete delta-rays and nuclear reactions, have been determined over a wide energy range by Monte Carlo simulations with Geant4.

PB-3 Phonon Production and Effects from Ion Strikes D. G. Walker, R. A. Weller, Vanderbilt University

The present work demonstrates the significance of non-equilibrium thermal effects associated with ion strikes in highly scaled devices and characterizes the energy deposition at small time and length scales through non-equilibrium simulation.

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PB-4 Transient Response of III-V Field-Effect Transistors to GeV Heavy-Ion Irradiation Dale McMorrow, J. Brad Boos, Doe Park, Joseph S. Melinger, Naval Research Laboratory; Alvin R. Knudson, William T. Lotshaw, SFA, Inc.; Alphonse Torres, Veronique Ferlet-Cavoris, Jean-Etienne Sauvestre, Claudine D’Hose, CEA/DIF

The SEE response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) to GeV heavy-ion irradiation reveal significant charge enhancement and very slow, microsecond timescale relaxation times.

PB-5 Single-Event Burnout of Super-Junction Power MOSFETs Naomi Ikeda, Satoshi Kuboyama, Sumio Matsuda, Japan Aerospace Exploration Agency

Experimental results for Single-Event Burnout of Super-Junction power MOSFETs are reported for the first time. Although observed cross-sections were small as expected, the charge collection spectra were not essentially different from standard power MOSFETs.

PB-6 Improved Model for Single-Event Burnout Mechanism Satoshi Kuboyama, Naomi Ikeda, Sumio Matsuda, Japan Aerospace Exploration Agency (JAXA); Tshio Hirao, Japan Atomic Energy Research Institute (JAERI)

We describe an improved model for Single-Event Burnout mechanism with the direct tunneling of carriers at the interface of epitaxial layer and substrate. Numerical simulation data based on the model were consistent with experimental data.

PB-7 SEMM-2: A Modeling System for Single-Event Upset Analysis Henry H. K. Tang, IBM T. J. Watson Res. Ctr.; Ethan H. Cannon, IBM Microelectronic Division

We describe SEMM-2, a recently updated simulation model for radiation-induced single-event upsets. SEMM-2 improves the important event generation code, including enhanced collision models of charged particles - semiconductor chip interactions.

PB-8 Analysis of Body-Ties Effects on SEU Resistance of Advanced FD-SOI-SRAMs Using Mixed Mode 3-D Simulations K. Hirose, H. Saito, S. Fukuda, Institute of Space and Astronautical Science; Y. Kuroda, S. Ishii, D. Takahashi, K. Yamamoto, Mitsubishi Heavy Industries, Ltd.

We analyzed the effects of body-ties on SEU resistance for FD-SOI SRAMs with 0.2 µm design rules by using a mixed-mode 3D-simulation. The bipolar gain of the parasitic bipolar transistor was found to decrease efficiently.

PB-9 Simulation-Based Analysis of SEU Effects in SRAM-Based FPGAs P. Bernardi, M. Sonza Reorda, L. Sterpone, M. Violante, Politecnico di Torino; M. Ceschia, D. Bortolato, A. Paccagnella, Università di Padova

We describe a simulation-based approach for predicting SEU effects in circuits mapped on SRAM-based FPGAs. Experimental results are presented that compare the approach with radiation testing and that confirms its accuracy.

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PB-10 Single-Event Transients Characterization in SOI CMOS Comparators Bing Zhao, Adrian Leuciuc, Stony Brook University

A theoretical analysis of single-event induced transients in SOI CMOS comparators is presented, confirmed by transistor-level simulations. The proposed approach can predict the probability of SEU at the output of the comparator.

2:50 – 3:20 PM BREAK HABERSHAM BALLROOM and GRAND BALLROOM I and II

SESSION C SPACE RADIATION ENVIRONMENTS 3:20 PM SESSION INTRODUCTION Chair: Mike Xapsos, NASA Goddard Space Flight Center

C-1 Evaluation of Standard Models for Specifying the Slot Region Radiation 3:25 PM Environment Using Data from the Compact Environmental Anomaly Sensor (CEASE) on TSX-5 Kevin P. Ray, Donald H. Brautigam, Gregory P. Ginet, Bronek Dichter, Air Force Research Laboratory; Daniel Madden, Boston College; Alan Ling, Radex Inc.; E. Gary Mullen, Assurance Technology Corporation

Evaluation of standard models for specifying the slot region of the radiation environment is given. Data from three and a half years of operations of the CEASE instrument on the TSX-5 Satellite is presented.

C-2 Energy-Deposition Events Measured by the CRRES PHA Experiment 3:40 PM Peter J. McNulty, Clemson University; Jim Kinnison, Richard Maurer, David R. Roth, Johns Hopkins Applied Physics Lab; Wagih Abdel-Kader, South Carolina State University; Robert Reed, NASA/GSFC

Elastic scattering, spallation reactions, and pion production contribute significantly to the energy-deposition spectrum measured in the proton belts by the PHA instrument on the CRRES.

C-3 Observation of the Solar Particle Events of October and 3:55 PM November 2003 from CREDO and MPTB C. S. Dyer, K. Hunter, S. Clucas, Space Dept, QinetiQ; A. Campbell, Naval Research Laboratory

Proton fluxes, LET spectra and SEE rates for the five solar particle events occurring during 26 October to 6 November 2003 are compared with previous events of the current solar maximum and with environment models.

C-4 Model for Solar Proton Risk Assessment 4:10 PM M. A. Xapsos, J. L. Barth, E. G. Stassinopoulos, R. E. McGuire, NASA/GSFC; C. A. Stauffer, G. B. Gee, SGT Inc.

A statistical model for cumulative solar proton event fluences and for worst-case flux during space missions is presented. New features include the solar minimum time period and proton energy spectra that extend to higher energies.

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POSTER PAPERS

PC-1 Survey of DSCS-III Differential Surface Charging L. Habash Krause, U. S. Air Force Academy; D. L. Cooke, K. P. Ray, Air Force Research Laboratory

An analysis of differential charging between dielectric surface materials and the frame of a DSCS-III geosynchronous is presented. Results indicate that a Kapton-Covered Surface Potential Monitor may be useful as a differential charging alarm.

PC-2 Update on the Use of Geant4 for the Simulation of Low-Energy Protons Scattering Off X-Ray Mirrors at Grazing Incidence Angles Fan Lei, Pete Truscott, QinetiQ; Ramón Nartallo, QinetiQ/Rhea; Petteri Nieminen, Eamonn Daly, ESA; Hugh Evans, ESA/Rhea

A new physics process has been implemented in the Geant4 Monte Carlo code to treat the scattering of low-energy protons at grazing incidence angles. The new model has been used to revise predictions of proton fluence at the focal plane of the XMM-Newton telescope obtained in earlier simulations.

PC-3 Particle Effects on the ISGRI Instrument On-Board the INTEGRAL Satellite O. Limousin, A. Claret, F. Lugiez, P. Laurent, R. Terrier, CEA-Saclay, France

We present the effect of particles on the ISGRI CdTe camera and its electronics, which has operated successfully in space on-board of the INTEGRAL satellite since October 2002.

SESSION D TERRESTRIAL RADIATION ENVIRONMENTS AND EFFECTS 4:25 PM SESSION INTRODUCTION Chair: Phillipe Roche, STMicroelectronics / France

D-1 Comparison of SER Test Methods for Commercial SRAMs 4:30 PM Jacques Baggio, Véronique Ferlet-Cavrois, Olivier Flament, CEA-DIF, France

Results of WNR continuous spectrum irradiations are compared to mono-energetic proton and neutron data according to the JEDEC test procedure. The influence of test parameters like proton energy and angle of incidence are investigated.

D-2 Measurements of the Flux and Energy Spectrum of Cosmic-Ray 4:45 PM on the Ground at Various Locations K. P. Rodbell, T. H. Zabel, M. S. Gordon, H. H. K. Tang, IBM Watson Research Center; P. Goldhagen, P. Bailey, EML, Dept Homeland Security; J. M. Clem, Bartol Research Institute

Terrestrial neutron spectra (thermal to GeV) have been measured in buildings and outdoors at different altitudes and latitudes in the United States. Implications of this new data on single-event upsets in microelectronics are discussed.

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D-3 Calculations and Measurements of the Spectrum of Cosmic-Ray 5:00 PM Neutrons on a High-Altitude Airplane Paul Goldhagen, Environmental Measurements Laboratory, U. S. Dept. of Homeland Security; John M. Clem, Bartol Research Institute; John W. Wilson, NASA Langley Research Center

Cosmic-ray secondary particle spectra have been calculated using a new Monte-Carlo-based global model of atmospheric cosmic radiation, and the calculated neutron spectra has been verified by measurements aboard an ER-2 high-altitude airplane.

POSTER PAPERS

PD-1 Neutron-Induced SEU in Bulk SRAMs in Terrestrial Environment: Simulations and Experiments Damien Lambert, CEA CEM2; Jacques Baggio, Véronique Ferlet-Cavrois, Olivier Flament, CEA; Jean-Marie Palau, Frédéric Saigne, Bruno Sagnes, CEM2; Nadine Buard, EADS-CCR; Thierry Carrière, EADS-ST

This paper investigates the sensitivity of bulk technologies in the terrestrial neutron environment as a function of technologies scaling. The technology sensitivity is analyzed both with experiments and Monte Carlo simulations.

PD-2 Soft Errors of DRAMs G. Schindlbeck, Infineon Technologies

Tests and reports on soft errors of DRAMs have to take soft errors from bit line hits into account. This is shown by neutron beam results which also reveal different multi-bit soft errors.

PD-3 An Atmospheric Radiation Model Based on Response Matrices Generated by Detailed Monte Carlo Simulations of Cosmic Ray Interactions Fan Lei, Simon Clucas, Clive Dyer, Pete Truscott, QinetiQ

A comprehensive model of the energetic radiation in the atmosphere has been developed. It can produce the particle spectra at a given location and time in the atmosphere. It is based on a cosmic ray radiation model, a rigidity cut-off calculation tool and detailed atmospheric response.

PD-4 A New Neutron Spectrometer for Avionics Environment Characterization Guillaume Hubert, Patrick Trochet, Olivier Riant, EADS Nucletudes; Patrick Heinz, EADS Airbus; Remi Gaillard, Consultant

A new neutron spectrometer for avionics environment is presented. We present the calibration phase and propose a method to determine the energy-spectrum from the experimental data. This method has been validated with CERF results and has been extended to avionics experiment.

5:15 PM END OF TUESDAY SESSIONS

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INVITED TALK Radiological Emergency Response Roles at the CDC 8:15 – 9:15 AM Paul A. Charp, Ph.D., Senior Health Physicist, Centers for Disease Control and Prevention, GRAND BALLROOM III and IV National Center for Environmental Health, Agency for Toxic Substances and Disease Registry

The Centers for Disease Control and Prevention (CDC) has specific roles and respon- sibilities to protect the nation’s health in response to disasters. Among these roles are the response capabilities as they relate to potential radiological events including releases, transportation incidents, medical uses, weapons related issues, use of nuclear materials in space related exploration, and to terrorism related events.

This presentation will discuss the role of the CDC in radiological emergencies and its participation in both the Federal Response Plan (FRP) and the Federal Radiological Emergency Response Plan through the Advisory Team for Environment, Food, and Health as defined by the radiological response plan. Under the FRP, CDC and the Department of Health and Human Services (DHHS) has a mechanism for coordinating delivery of federal assistance and resources to augment efforts of state and local governments overwhelmed by major disaster or emergency. HHS is the primary agency providing health and medical services including preventive health services, environmental health services, and mental health services. Under the radi- ological response plan, CDC serves as a primary contact to assist and support the state and local radiological response efforts in conjunction with other federal agencies. The remainder of the presentation will discuss the role of the Advisory Team for Environment, Food, and Health including the participatory agencies, the purpose of the team, its organizational structure, and how it interacts with other federal agencies.

Dr. Paul Charp has been with the Centers for Disease Control and Prevention and the Agency for Toxic Substances and Disease Registry (CDC/ATSDR) since 1988 and now serves in the capacity of Senior Health Physicist for Division of Health Assessment and Consultation (DHAC). In this position, he oversees the development and consistent use of radiological concepts as they pertain to environmental public health. While with ATSDR, he has authored many public health assessments, health consultations, technical reviews, and all of the public health advisories dealing with radiological contamination in the environment and its potential impacts on public health. He is also a member of the Department of Health and Human Services Advisory Team for Environment, Safety, and Health as currently defined in the Federal Radiological Emergency Response Plan. Organizationally, Dr. Charp, with national recognition as a radiation expert and subject matter expert, is in the Federal Facilities Assessment Branch where he is assigned to the Office of the Branch Chief.

Dr. Charp has previous research and teaching experience at the Georgia Institute of Technology, Emory University Medical School, Oak Ridge National Laboratory and Kansas State University. His courses of instruction at Georgia Tech have included Applied , Radiation Biology, and, most recently, Radiological Assessment and Waste Management. His academic background includes not only health physics but cell, molecular biology and biochemistry, radiation biology, physics/biophysics and engineering. He is a past president of the Atlanta Chapter of the Health Physics Society, past-chair of the National Health Physics Society Placement Committee, current member of the National Health Physics Standards Committee, and a member of the Restoration of Contaminated Areas and Equipment to Safe Conditions, Cleanup Subcommittee of Health Physics Society Homeland Security Committee.

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SESSION E SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS 9:15 AM SESSION INTRODUCTION Chair: Bill Heidergott, General Dynamics

E-1 A Comparative Study of Heavy Ion and Proton Induced Bit Error 9:20 AM Sensitivity and Complex Burst Error Modes in Commercially Available High Speed SiGe BiCMOS Paul W. Marshall, Consultant; Marty Carts, Christina Seidleck, Raytheon Information Technology; Art Campbell, Naval Research Laboratory; Robert Reed, NASA Goddard Space Flight Center; Ray Ladbury, Orbital Sciences Corporation; Steve Currie, Pam Riggs, Karl Fritz, Barb Randall, Barry Gilbert, The Mayo Foundation

We compare heavy ion and proton SEE data on commercial SiGe technologies from IBM’s 7HP process and Jazz Semiconductor’s Jazz-120 process at data rates from 50 Mpbs to 12.4 Gbps.

E-2 Single Event Destructive Failure in a Bipolar ASIC 9:35 AM P. Rickey, W. J. Stapor, P. T. McDonald, Innovative Concepts, Inc; W. Abare, Harris GCSD

Single event destructive failure has been observed in Maxim C-Pi process bipolar ASICs for both heavy and protons. We discuss the observed failures, proposed mechanism of failure, and significance for space applications.

E-3 Dynamic Testing of the Xilinx Virtex-II Family Input 9:50 AM Output Blocks (IOBs) Sana Rezgui, Carl Carmichael, Jason Moore, Austin Lesea, Xilinx, Inc.; Gary Swift, Jet Propulsion Laboratory/Caltech; Matt Napier, Ted Wrobel, Sandia National Laboratories; John Maksymowicz, Jeff George, Rocky Koga, The Aerospace Corporation

Heavy-ion irradiation and fault injection experiments were conducted to evaluate the upset sensitivity of the Xilinx Virtex-II FPGA’s Input Output Block (IOB). Triple Module Redundancy (TMR) of the IOBs proved to be quite effective.

10:05 – 10:35 AM BREAK HABERSHAM BALLROOM and GRAND BALLROOM I and II

E-4 Proton Induced Upset Cross-Section in Radiation Hard 10:35 AM SOI CMOS SRAMs S. T. Liu, H. Y. Liu, D. Anthony, W. Heikkila, ; H. Hughes, A. Campbell, Naval Research Laboratory; R. Lawrence, P. McMarr, SFA Inc.

Experiments and calculations of proton induced upset cross-sections based on a double node hit model for our radiation hard 4 M and 1 M SOI CMOS SRAMs are discussed.

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E-5 Heavy Ion Induced Digital Single-Event Transients in Deep 10:50 AM Submicron Processes Joe Benedetto, Paul Eaton, Keith Avery, Dave Mavis, MRC; Matt Gadlage, Tom Turflinger, NAVSEA, Crane

Single-event transients (SETs) in digital circuits/processes are examined. SETs appear to substantially mitigate traditional SEU static-latch hardening techniques below 0.25 µm. The resulting IC error-rate for hardened-electronics will be dominated by the combinational-logic SET rate.

E-6 Use of Light-Ion-Induced SEU in Devices under Reduced Bias to 11:05 AM Evaluate their SEU Cross Section Joseph Barak, Avner Haran, Eli Adler, Moshe Azoulay, Yochai Nitzan, Amnon Zentner, David David, Soreq NRC; Bernd E. Fischer, M. Heiss, GSI; David Betel, Tower Semiconductor

SEU cross section was measured for several devices under reduced bias. The results show that alpha particles and light ions with long range can be used to test devices and save accelerator time.

E-7 Extensions of the FOM Method - Proton SEL and 11:20 AM Atmospheric Neutron SEU Eugene Normand, Boeing Phantom Works

Petersen’s FOM method (1998) is applied to single-event latchup (SEL) to provide a criterion for which devices are susceptible to proton SEL. The FOM method is also applied to SEU from atmospheric neutrons.

POSTER PAPERS

PE-1 Frequency Dependence of Single-Event Upset in Advanced Commercial PowerPC Farokh Irom, Farhad Farmanesh, Gary M. Swift, Allan H. Johnston, JPL

Single-event upset from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequency up to 1 GHz. Frequency and core voltage dependence of single-event upsets in registers is discussed.

PE-2 Software Solutions for 100% Detection of Single Transient Faults Bogdan Nicolescu, Yvon Savaria, Ecole Polytechnique de Montreal; Raoul Velazco, Tima Laboratory

This paper explores new solutions to provide full protection against transient faults affecting internal processor storage elements. Simulation results demonstrate the effectiveness of the proposed and implemented solutions.

PE-3 Proton Testing of SEFI Mitigation Techniques for Microprocessors David Czajkowski, Manish Pagey, Don Seidenspinner, Space Micro Inc.

We describe a single event functional interrupt (SEFI) mitigation technique that monitors and maintains the operational status of commercial microprocessors in radiation environments. Proton radiation test results using this technique with an Intel Pentium III are presented.

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PE-4 A Cost-Effective Robust Data Handling Architecture for Space Missions Shazia Maqbool, Craig Underwood, Surrey Space Centre

We describe a fault-tolerant architecture with automated system recovery designed to enhance COTS-device-based space-system reliability in the presence of radiation-induced functional errors. The architecture is flexible enough to support a variety of fault-tolerant strategies.

PE-5 Analysis of Single-Event Effects in Delta-Sigma Modulators Adrian Leuciuc, Bing Zhao, Yi Tian, Jinhu , Stony Brook University

Behavioral simulations are carried out for characterizing single-event effects in Delta-Sigma modulators, the core subsystem of an oversampling A/D converter. System-level design techniques for mitigating the SEE in such systems are suggested.

PE-6 Alpha-Particle SEU Performance of SRAM with Triple Well Yanzhong Xu, Helmut Puchner, Daniele Radaelli, Ahmad Chatila, Cypress Semiconductor Corporation

A triple well scheme has been implemented. In contrast to the historical literature, the measured FIT rate of the triple well silicon shows a significant degradation of the SER FIT rate. The mechanism of degradation is investigated.

PE-7 Investigation of Millisecond-Long Analog Sinle-Event Transients in the LM6144 Op Amp Y. Boulghassoul, L. W. Massengill, W. T. Holman, P. Fouillat, Vanderbilt University; S. Buchner, QSS Group Inc.; D. McMorrow, Naval Research Laboratory; V. Pouget, IXL Laboratory; M. Savage, Naval Surface Warfare Center; C. Poivey, NASA/GSFC; J. Howard, Jackson & Tull; M. Maher, National Semiconductor Corporation

A new category of analog single-event transients with millisecond-long duration have been experimentally observed in the LM6144. Relying on heavy-ion tests, laser diagnostics, and computer modeling, we uncover the mechanisms and causes of these anomalous ASETs.

PE-8 System Level Categorization of Analog Single-Event Transients A. V. Kauppila, L. W. Massengill, W. T. Holman, Vanderbilt University

We propose an analog single-event transient (ASETs) classification scheme. Using this measure, the system level severity of circuit ASETs can be quantified and impact on analog systems can be determined.

11:35 AM – 1:00 PM LUNCH

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SESSION F RADIATION EFFECTS IN PHOTONICS 1:00 PM SESSION INTRODUCTION Chair: Gordon Hopkinson, SIRA Electro-Optics Ltd. / United Kingdom

F-1 Proton Damage in LEDs with Wavelengths Above the Silicon 1:05 PM Wavelength Cutoff Heidi N. Becker, Allan H. Johnston, Jet Propulsion Laboratory

Proton damage is investigated for LEDs with wavelengths of 1050 and 1550 nm. Light output becomes nonlinear with current after irradiation, unlike AlGaAs LEDs. Mechanisms are proposed that are related to the material properties.

F-2 Radiation Degradation Mechanisms in Laser Diodes 1:20 PM Allan Johnston, Jet Propulsion Laboratory

Evaluation of laser diodes over extended current ranges is a useful diagnostic method to distinguish between bulk recombination and other loss mechanisms. This is particularly applicable to InGaAsP lasers with low barrier potentials.

F-3 Relative Degradation of Near Infrared Avalanche from 1:35 PM Proton Irradiation Heidi N. Becker, Allan H. Johnston, Jet Propulsion Laboratory

InGaAs and Ge avalanche photodiodes are compared for the effects of 63 MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

POSTER PAPERS

PF-1 Analysis of Images of Neutron Interactions and Single Particle Displacement Damage in CCD Arrays A. M. Chugg, M. J. Moutrie, R. Jones, MBDA UK Ltd; P. R. Truscott, QinetiQ

High resolution histories of dark current in neutron-induced spikes in CCD’s exhibit numerous sub-levels and a vastly expanded database of transient events reveals new details in the frequency distribution for the event intensity.

PF-2 Proton-Induced Transient Effects in GaAs Photodiodes and VCSELs Ethan L. Blansett, Darwin K. Serkland, Theodore F. Wrobel, Gordon A. Keeler, Kent M. Geib, Gary D. Karpen, Melissa M. Medrano, Gregory M. Peake, Terry W. Hargett, John F. Klem, Samuel D. Hawkins, Victoria M. Montano, Charles T. Sullivan, Sandia National Laboratories

We describe transient effect measurements on a GaAs and VCSEL with 63.3 MeV protons. Transient event data and calculated bit-error rates for an optical data link are presented.

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PF-3 Proton Radiation Damage to Light Emission in GaAs and GaN Light-Emitting Diodes (LEDS) at Low Temperatures Shyam M. Khanna, Diego Estan, Defence R&D Canada - Ottawa; Alain Houdayer, Universite de Montreal; Hui Chun Liu, Richard Dudek, National Research Council of Canada

It is shown that proton radiation damage to light emission in GaAs, GaAs QW and GaN QW LEDs is markedly reduced on low temperature irradiation in contrast to the damage observed at room temperature irradiation.

PF-4 Impact of Proton Irradiation on a Grating Demultiplexer Aditya Kalavagunta, Mark Neifeld, Hugh Barnaby, University of Arizona; Ron Schrimpf, Vanderbilt University

The impact of proton radiation on a candidate optical communication system’s performance is examined. The system-level degradation is dominated by the response of the VCSEL source, but passive component degradation can also affect system performance.

POSTER SESSION INTRODUCTION 1:50 – 4:15 PM KENNESAW ROOM

Chair: Mark Hopkins, The Aerospace Corporation

4:15 PM END OF WEDNESDAY SESSIONS

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INVITED TALK New Horizons: The First Mission to Explore the Last Planet, 8:15 – 9:15 AM And Beyond GRAND BALLROOM III and IV S. Alan Stern, Southwest Research Institute

New Horizons is the first mission in NASA’s flagship New Frontiers program to explore the planets robotically. It is the largest Principal-Investigator-led mission in NASA. Planned for a launch in January 2006, New Horizons will fly past Jupiter in early 2007 for a gravity assist, followed by flybys of the Pluto-Charon system in mid-2015 and one or more primordial Kuiper Belt Objects beyond Pluto in the succeeding 5 years. A description of the mission’s scientific goals, the spacecraft design, the instrument complement, and the status of development will be given during this talk.

Dr. Alan Stern is a planetary scientist, an author, and the Director of the Southwest Research Institute’s (SwRI) Department of Space Studies in Boulder, Colorado. Dr. Stern is a researcher whose work has taken him to numerous astronomical observatories, to the South Pole, and to the upper atmosphere aboard high performance military aircraft.

From 1991 to 1994 he was the leader of SwRI’s Astrophysical and Planetary Sciences group at Southwest Research Institute in San Antonio. From 1983 to 1991 he held positions at the University of Colorado in the Center for Space and Geoscience Policy, the office of the Vice President for Research, the Center for Astrophysics and Space Astronomy (CASA). Before receiving his doctorate in 1989, Dr. Stern completed a master’s degree in aerospace engineering and then spent seven years as an aero- space systems engineer, concentrating on spacecraft and payload systems at the NASA Johnson Space Center, Martin Marietta Aerospace, and the Laboratory for Atmospheric and Space Physics at the University of Colorado.

Dr. Stern has published over 150 technical papers and 50 popular articles. He has given over 100 technical talks and dozens of popular lectures and speeches about astronomy and the space program. He has written two books, The U.S. Space Program After Challenger (Franklin-Watts, 1987), and Pluto and Charon: Ice Worlds on the Ragged Edge of the Solar System (John Wiley and Sons, 1997).

Dr. Stern’s research has focused on studies of our solar system’s Kuiper belt and Oort cloud, comets, the of the outer planets, Pluto and Triton, and the search for evidence of solar systems around other stars. He has also worked on spacecraft rendezvous theory, terrestrial polar mesospheric clouds, galactic astro- physics, and studies of tenuous satellite atmospheres. Dr. Stern has over 15 years of experience in instrument development, with a strong concentration in technologies. Dr. Stern is PI on numerous space-based instruments, including the PERSI imager/spectrometer payload on NASA’s New Horizon’s Pluto mission. In 1995 he was selected to be a Space Shuttle mission specialist finalist.

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SESSION G HARDNESS BY DESIGN 9:15 AM SESSION INTRODUCTION Chair: Harald Schone, Air Force Research Laboratory

G-1 Single-Event Simulation Methodology for Analog/Mixed Signal 9:20 AM Design Hardening J. S. Kauppila, L. W. Massengill, W. T. Holman, A. V. Kauppila, Vanderbilt University

We propose a single-event simulation methodology to characterize the upset/error window of vulnerability for complex analog/mixed signal circuits. A custom designed 8-bit pipeline ADC is characterized and hardened based on the results of the simulations.

G-2 SEU Tolerant Gain Stages for CMOS and BiCMOS Applications 9:35 AM Esko Mikkola, Hugh J. Barnaby, H. G. Parks, University of Arizona; Bert Vermeire, Kaivan Borhani, Ridgetop Group Inc.

A single-event hardened CMOS comparator design is presented. The SEU characteristics of this comparator are better than the reported SEU characteristics of commercially available comparators.

G-3 Reliability Enhancement in High-Performance MOSFETs by 9:50 AM Annular Transistor Design Donald C. Mayer, Ronald C. Lacoe, Everett E. King, Jon V. Osborn, The Aerospace Corporation

In addition to being radiation immune, annular MOSFETs have reduced drain electric fields, which improves hot-carrier reliability. An enclosed 0.25 µm n-MOSFET has demonstrated 3x lifetime improvement compared to a conventional design.

POSTER PAPERS

PG-1 Design Approaches for Controlling Body Voltage and Clock Duty Cycle for Improved Radiation Tolerance for CMOS Digital Circuits for Total Dose Environments Megan Casey, Patrick Fleming, Alan Tipton, Bharat Bhuva, Lloyd Massengill, Vanderbilt University

Circuit designs for improving the radiation tolerance of CMOS circuits by controlling the body voltage and clock duty cycle are developed and experimentally verified.

PG-2 Single-Event Effects in 0.15 µm Fully-Depleted CMOS/SOI Commercial Process Akiko Makihara, Takuya Yamaguchi, Isamu Nakashima, Toshifumi Arimitsu, High-Reliability Components Corporation; Yoshiya Iide, Hiroaki Asai, Hiroyuki Shindou, Satoshi Kuboyama, Sumio Matsuda, Japan Aerospace Exploration Agency

We evaluated SEEs in test circuits fabricated at OKI with their 0.15 µm Fully-Depleted CMOS/SOI commercial process. The sample device was designed with hardness-by-design methodology. The results were discussed for effective hardening design associated with SEEs.

10:05 – 10:35 AM BREAK GARDEN COURT

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SESSION H DOSIMETRY AND FACILITIES 10:35 AM SESSION INTRODUCTION Chair: Dave Roth, Johns Hopkins University Applied Physics Laboratory

H-1 Diamond PCD for Reactor Active Dosimetry Applications 10:40 AM P. J. Griffin, S. M. Liker, D. B. King, K. R. DePriest, R. L. Hohlfelder, A. J. Suo-Anttila, Sandia National Laboratories

This paper reports on the development, calibration, and application of a radiation- hardened diamond PCD for active ionizing dose measurements in research reactors. Results are reported for gamma irradiations between 10 - 1011 (C)/sec.

H-2 Quality Control of Intensity Modulated with 10:55 AM Optically Stimulated Luminescent Films Katia Idri, Lore Santoro, Jean-Roch Vaillé, Jean Fesquet, Laurent Dusseau, CEM2 Université Montpellier II; Elisabeth Charpiot, Joël Herault, André Costa, Centre Antoine Lassagne; Norbert Aillères, René Delard, Centre Val d'Aurelle

An OSL dose mapping system is characterized and its possible application in IMRT investigated. The dose map obtained during an IMRT treatment performed on a Plexiglas phantom corroborates the results obtained with radiological films.

H-3 Conception of an Integrated Sensor for the Radiation Monitoring of 11:10 AM the CMS Experiment at the F. Ravotti, M. Glaser, M. Moll, CERN; K. Idri, J-R. Vaillé, H. Prevost, L. Dusseau, CEM2, Université Montpellier II

The concept of an integrated radiation-monitoring sensor for the CMS experiment at the LHC is presented. RadFET, OSL, p-i-n and Pad-diode dosimeters will monitor ionizing and non-ionizing energy losses in the harsh radiation environment.

H-4 Measurement of Device Parameters Using Image Recovery Techniques 11:25 AM in Large-Scale IC Devices Leif Scheick, Larry Edmonds, JPL/NASA

A method of extracting physical parameters from mathematical and image subtraction techniques is described. Device characteristics and parameters can be extracted from the radiation image subtraction spectrum.

POSTER PAPERS

PH-1 Benchmark Experiments for Space Reactor Neutron Shielding of Mission Electronics John G. Williams, University of Arizona; Insoo Jun, Michael Cherng, Jagdishbai Patel, Jet Propulsion Laboratory

Experiments and calculations simulating the neutron shadow shield for a reactor-powered space vehicle are described, including calculations for a variety of shield configurations and materials, and experimental benchmark tests using a bare fast reactor.

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PH-2 Energetic Spectrometer for the Space Environment Reliability Verification Integrated System (SERVIS-1) Satellite G.E. Galica, B.D. Green, T. Nakamura, Physical Sciences Inc.; H. Hasegawa, T. Itoh, Y. Sasaki, Mitsubishi Precision Corp.; H. Kanai, M. Akiyama, K. Hama, Institute for Unmanned Space Experiment Free Flyer

We present the design and results from a new radiation sensor, the Light , designed specifically to quantify the orbital environment responsible for microelectronics damage. It supports Japan’s Space Environment Reliability Verification Integrated System.

11:40 AM – 1:10 PM LUNCH

SESSION I HARDNESS ASSURANCE 1:10 PM SESSION INTRODUCTION Chair: Mike Maher, National Semiconductor

I-1 The Effects of Neutron Irradiation on Gamma Sensitivity 1:15 PM of Linear Integrated Circuits Jerry Gorelick, Lina Kanchawa, Boeing Satellite Systems; Raymond Ladbury, Orbital Sciences/GSFC

A review of a dozen linear bipolar microcircuits exposed to neutrons then gammas are compared to parts exposed to gammas only. The data show that neutron irradiation can affect subsequent total dose behavior. This has significant hardness assurance implications.

I-2 Surface Charge Analysis as a Total Dose Radiation Measurement 1:30 PM Tool for Si/SiO2 John Stacey, Ron Schrimpf, Dan Fleetwood, Kevin Holmes, Vanderbilt University

The use of a Surface Charge Analyzer (SCA) is described to measure the total dose radiation response of oxide-semiconductor structures non-invasively. SCA data show good correlation with capacitance-voltage measurements after total dose exposure.

I-3 Issues for Single-Event Proton Testing of ICs 1:45 PM J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, G. L. Hash, Sandia National Laboratories; V. Ferlet-Cavrois, P. Paillet, J.Baggio, CEA

The impact of total ionizing dose and displacement damage on hardness assurance during SEU and SEL testing of commercial SRAMs is studied over a wide range of proton and neutron energies and fluence levels.

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I-4 Broadening of the Variance of the Number of Upsets in a 2:00 PM Read-Cycle by MBU’s A. M. Chugg, M. J. Moutrie, R. Jones, MBDA UK Ltd.

We show, using neutron events in CCD’s, that the proportion of MBU’s in SEE test data may be estimated from the magnitudes of the variance and mean of the number of upsets in a read-cycle.

I-5 Correlation Between Laser Experiments and Heavy Ion Tests 2:15 PM Florent Miller, Nadine Buard, EADS Corporate Research Center; Thierry Carrière, Richard Dufayel, EADS Space Transportation; Rémi Gaillard, Patrick Poirot, INFODUC; Jean-Marie Palau, Bruno Sagnes, CEM2, Université Montpellier II; Pascal Fouillat, Universite de Bordeaux

This paper presents the state of art concerning the correlation between EADS CCR laser experiments and heavy ion tests. More precisely, it studies the influence of the laser spot size on integrated components.

POSTER PAPERS

PI-1 Pulsed Laser Testing Methodology for Single-Event Transients in Linear Devices Stephen Buchner, QSS/NASA/GSFC; James Howard, Jackson & Tull Chartered Engineers – NASA/GSFC; Christian Poivey, SGT/NASA/GSFC; Dale McMorrow, Naval Research Laboratory; Ron Pease, RLP Research

A methodology based on pulsed laser testing is presented for minimizing the amount of heavy ion testing required for qualifying linear devices for single-event transients.

PI-2 Evidence for Polarity and Geometry Dependent Ionizing Defect Response in Bipolar Base Oxides Eli H. Minson, Hugh J. Barnaby, Ivan Sanchez, University of Arizona; R. L. Pease, RLP Research; D. G. Platteter, Gary Dunham, NAVSEA CRANE

Experiments on gated diode structures show a dependence upon polarity and geometry for generation of interface and oxide traps. Ionizing radiation results and companion simulation are presented and mechanisms put forth to explain the dependence.

PI-3 Proton, Neutron, and Gamma Degradation of Optocouplers Jerry Gorelick, Boeing Satellite Systems; Raymond Ladbury, Orbital Sciences/GSFC

Optocouplers from two different suppliers were subjected to proton, neutron, and gamma irradiations. Degradation in Current Transfer Ratio (CTR) are compared to see how well gamma plus neutron can be used to simulate proton degradation.

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DATA WORKSHOP INTRODUCTION 2:30 – 4:50 PM HABERSHAM BALLROOM

(TUESDAY and WEDNESDAY VIEWING OF THE DATA WORKSHOP WILL BE IN THE ANDOVER and ASCOT ROOMS)

Chair: Jeff Black, Mission Research Corporation

W-1 Technical Standard for Atmospheric Radiation Single-Event Effects (SEE) on Avionics Electronics Robert H. Edwards, Goodrich Engine Controls Systems; Clive S.Dyer, QinetiQ; Eugene Normand, Boeing Radiation Effects Laboratory

We describe an IEC Technical Standard for Atmospheric Radiation Single-Event Effects at aircraft altitudes. Guidance is provided on the aircraft radiation environment, effects on electronic components, system assessment, single-event rate calculation and compliance.

W-2 Single-Event Effects Test Results on Critical Devices for High-Performance Space Applications Super Nguyen, Brian Triggs, Eric Normandy, Brian Steffan, Paul Storrasli, Maria-Isabel Soto, Raytheon Electronic Systems; Rocky Koga, The Aerospace Corporation

This paper summarizes the test results of the single-event effects (SEE) testing with heavy ions and protons on high-performance commercial/military semiconductor devices intended for use in space applications.

W-3 Compendia of TID and SEE Test Results of Integrated Circuits Phil Layton, Gale Williamson, Charlie Gilbert, Larry Longden, Clarence Sloan, Maxwell Technologies

SEE and TID data taken for existing and potential space products is presented. The data was collected to evaluate these devices for radiation effects in space environments.

W-4 Current Single-Event Effects Results for Candidate Spacecraft Electronics for NASA Martha V. O'Bryan, Christina M. Seidleck, Martin A. Carts, Raytheon - NASA/GSFC; Kenneth A. LaBel, Cheryl J. Marshall, Donald K. Hawkins, Anthony B. Sanders, Stephen R. Cox, Christian Poivey, Tim Irwin, NASA/GSFC; Ray L. Ladbury, Scott D. Kniffin, Christopher Palor, Orbital Sciences Corporation - NASA/GSFC; James W. Howard Jr., Hak S. Kim, James D. Forney, Jackson & Tull Chartered Engineers – NASA/GSFC; Paul W. Marshall, Consulant, Stephen P. Buchner, QSS/NASA/GSFC

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single-event effects. Devices tested include optoelectronics, linear bipolar, and hybrid devices, among others.

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W-5 Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA Donna J. Cochran, Stephen P. Buchner, Tim Irwin, QSS/NASA/GSFC; Scott D. Kniffin, Ray L. Ladbury, Christopher Palor, Orbital Sciences Corporation - NASA/GSFC; Kenneth A. LaBel, Robert A. Reed, Cheryl J. Marshall, Donald K. Hawkins, Anthony B. Sanders, Stephen R. Cox, NASA/GSFC; Martha O'Bryan, Martin A. Carts, Raytheon - NASA/GSFC; James W. Howard Jr., Hak S. Kim, James D. Forney, Jackson & Tull Chartered Engineers – NASA/GSFC; Christian Poivey, SGY-NASA/GSFC; Paul W. Marshall, Consulant

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelec- tronics, linear bipolar devices, and hybrid devices, among others.

W-6 SEE Sensitivities of Selected Advanced Flash and First-In-First-Out Memories R. Koga, V. Tran, J. George, K. Crawford, S. Crain, M. Zakrzewski, P. Yu, The Aerospace Corporation

Single-event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transient, other upsets initiated by high LET ions are semi-permanent.

W-7 In-Flight Observations of Long-Term Single-Event Effect (SEE) Performance on Xray Timing Explorer (XTE) Solid State Recorders (SSR) Christian Poivey, George Gee, SGT, Inc; Ken A. LaBel, Janet L. Barth, NASA/GSFC

We present multi-year Single-Event Upset (SEU) flight data on Solid State Recorder (SSR) memories for the X-ray Timing Explorer (XTE) NASA mission. Actual SEU rates are compared to the predicted rates based on ground test data and environment predictions.

W-8 SEE and TID Test Results of 1 GB Flash Memories Tilan Langley, Paul Murray, SEAKR Engineering

Single-event effect and total ionizing dose test results of 1 GB FLASH memories are reported in this paper. Effects characterized include single-event upset, latchup and functional interrupt. New effects are discussed and compared with previous results.

W-9 Dynamic SDRAM SEFI Detection and Recovery Test Results Steven M. Guertin, Jeffrey D. Patterson, Duc N. Nguyen, Jet Propulsion Laboratory

Single-Event Functionality Interrupt (SEFI) results are presented for Hynix SDRAMS. SEFI response threshold is below LET 9.9 Mev-cm2/mg and saturated cross section is 6x10-5cm2. Dynamic SEFI identification was made, and in-situ recov- ery restored functionality.

W-10 Data Retention Characterization of Non-Volatile Memories D. R. Roth, J. D. Kinnison, R. H. Maurer, JHU/APL; E. Patnaude, Maxwell Technologies

Data retention times in terms of dose and accelerated lifetime have been characterized on four non-volatile memory devices used in spacecraft.

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W-11 Proton Irradiation Effects on 2 Gb Flash Memory W. Wester, C. Nelson, J. Marriner, Fermilab

We report TID and SEE results on 2 Gb Samsung flash memory after exposure to 200 MeV protons to doses of 36 and 83 Krads. We found no catastrophic failures and have characterized single-event upsets.

W-12 Heavy Ion SEE Testing of the Xilinx XQR117V16 Configuration PROM J. George, R. Koga, The Aerospace Corporation; C. Carmichael, S. Rezgui, Xilinx, Inc.; G. Swift, Jet Propulsion Laboratory

The XQR17V16 PROM demonstrated immunity to latch-up and static upsets to an LET of 163 MeV/mg/cm2 (effective) using heavy ions. We observed dynamic bit upsets and several types of SEFI errors.

W-13 Dynamic Single-Event Upset Characterization of the Virtex-II and Spartan-III SRAM Field Programmable Gate Arrays Using Proton Irradiation David M. Hiemstra, Fayez Chayab, Lucas Szajek, MDRobotics

The proton induced SEU cross-sections of dynamic test designs implemented on Xilinx’s Virtex-II and Spartan-III FPGA’s are presented. The cross-sections are used to estimate upset rates in the space radiation environment.

W-14 SEE and TID Results for a Commercially Fabricated Radiation Hardened Field Programmable Gate Array Craig Hafer, Ron Lake, Anthony Jordan, Teresa Farris, Aeroflex Colorado Springs

Aeroflex’s RadHard-by-Design commercially fabricated Field Programmable Gate Array provides a radiation hardened quick-turn solution to aerospace IC users. Characterization results for single-event upset, single-event latchup and total ionizing dose are presented.

W-15 Candidate Spacecraft Electronics Subjected to ELDRS per Mil-Std-883/Method 1019.6 Dose Rate Condition D, <10 mrad/sec David Meshel, Northrop Grumman Electronic Systems; David Love, Chris Peterson, Northrop Grumman Space Systems; Kathleen Mil, Northrop Grumman Space Technologies and Services Company

Eight linear bipolar microcircuits were subjected to Mil-Std-883 Test Method 1019.6 Condition D. Both biased and unbiased exposures were made. Unbiased exposures in some cases are shown to have even a greater sensitivity.

W-16 Radiation Lot Acceptance Testing (RLAT) at High and Low Dose Rates with Neutron Pre-Dosing Steven N. Renfrow, Barry A. Posey, Matthew Davis, Robert Steinbach, Daniel Morgan, Mission Research Corp; Gregory Sexton, Northrop Grumman

We present results of radiation lot acceptance testing (RLAT) on microcircuits exposed to neutron flux prior to total dose exposure. RLAT was performed at high dose rate with anneal and low dose rate radiation levels.

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W-17 Test Results of Total Ionizing Dose Conducted at Jet Propulsion Laboratory Rosa M. Rivas, Allan H. Johnston, Bernard G. Rax, Tetsuo F. Miyahira, Michael D. Wiedeman, JPL

This paper reports recent Total Ionization Dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and ELDRS effects under biased and unbiased condition.

W-18 The Effect of on the Enhanced Low Dose Rate Sensitivity (ELDRS) of National LM124 Opamps John E. Seiler, Gary W. Dunham, Dale G. Platteter, NAVSEA Crane; Ron L. Pease, RLP Research; Michael C. Maher, National Semiconductor Corporation; Marty L. Shaneyfelt, Sandia National Laboratories

This paper presents high and low dose rate test results for the National LM124 prepared with six different passivation types.

W-19 Evolution of Lowest Supply Voltage and Hysteresis Phenomena in Irradiated Analog CMOS Switches F. J. Franco, J. A. Agapito, Y. Zong, Universidad Complutense de Madrid; J. Casas-Cubillos, M. A. Rodriguez-Ruiz, CERN, AT Division

The influence of the accumulated radiation on the lowest supply voltage of analog CMOS switches is described. Also, the evolution of their switching threshold voltages and evidences of hysteresis phenomena are shown.

W-20 A Radiation-Hardened High-Precision Resolver-to-Digital Converter (RDC) Nathan Nowlin, Steve McEndree, Mission Research Corporation; Daryl Butcher, Technology Applications Group

Data for a radiation hardened resolver-to-digital converter indicate total-dose hardness above 500 krad (Si), SEL immunity, and SEU rates of fewer than 1e-3 upsets/device/day. Dose-rate and neutron results are also presented.

W-21 Radiation Testing Campaign for a New Miniaturized Space GPS Receiver Martin Unwin, Surrey Satellite Technology Ltd, University of Surrey; Craig Underwood, Surrey Space Centre, University of Surrey; Adam Frydland, Peter Jameson, QinetiQ; Reno Harboe Sorensen, ESA/Estec

This paper describes the radiation susceptibility testing of a miniaturized space GPS receiver for small satellite applications. Tests on COTS parts included TID, SEE testing and receiver operational effects under heavy ion exposure.

W-22 Effects of Gamma-Ray Irradiation on Quantum-Well Semiconductor Lasers Dan G. Sporea, National Institute for Lasers, Plasma and Radiation Physics

We investigated three types of commercially available quantum-well semiconductor laser, irradiated by gamma-ray up to the total irradiation doses of 96 Mrad. The electrical and optoelectronic characteristics were studied and the main results are discussed.

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W-23 Total Dose Effects and Latch-Up Screening on MEMS COTS Accelerometers Oudea Coumar, EADS-ST; Patrick Poirot, Rémi Gaillard, Infoduc; Florent Miller, Nadine Buard, EADS CCR; Laurent Marchand, ESA/ESTEC

Two families of MEMS COTS are characterized for the total dose response, latch-up and SET sensitivity. These MEMS are microelectromechanical : ADXL150 and SCA600, which are fabricated with surface and bulk micromachining techniques.

W-24 Terrestrial Solar Cells in Space Taishi Sumita, Mitsuru Imaizumi, Shirou Kawakita, Sumio Matsuda, Saburou Kuwajima, Japan Aerospace Exploration Agency (JAXA); Takeshi Ohshima, Tomihiro Kamiya, Japan Atomic Energy Research Institute (JAERI)

The mission operation of MDS-1 is over with lots of accumulated precious data on September, 2003. We report the analysis of degradation behavior of terrestrial solar cells in orbit and on ground.

W-25 Beam Properties of the New Radiation Effects Research Stations at Indiana University Cyclotron Facility Barbara von Przewoski, Thomas Rinckel, William Manwaring, Gary Broxton, Mircea Chipara, Charles C. Foster, Edmund R. Hall, Tony Kinser, Indiana University Cyclotron Facility; Kenneth M. Murray, KM Sciences

We describe two new beamlines for radiation effects research at the Indiana University Cyclotron Facility. Beam Characteristics such as transmission, energy, energy spread and lateral profile are described and compared to calculations.

W-26 Measurements of the Energy Spectrum of Degraded Proton Beams at NPTC Ethan W. Cascio, Janet M. Sisterson, Surajit Sarkar, The Northeast Proton Therapy Center at Massachusetts General Hospital

The Results of NaI measurements of the energy spectrum of degraded proton beams at The Northeast Proton Therapy Center at Massachusetts General Hospital are described.

W-27 A 15 MeV/Nucleon Cocktail for Heavy Ion Testing M. A. McMahan, D. Leitner, T. Gimpel, J. Morel, R. Siero, R. Thatcher, LBNL

The Operations Group at the 88” Cyclotron at LBNL have developed a new cocktail of heavy ions ranging from Z=12-36 at 15 MeV/nucleon, which gives LETs from 1-25 MeV/mg/cm2 and ranges from 189-468 µm.

4:50 PM END OF THURSDAY SESSIONS

5:00 – 6:30 PM RADIATION EFFECTS COMMITTEE OPEN MEETING GRAND BALLROOM III and IV

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INVITED TALK Is Washington DC Built on Ejecta Deposits of the 35.5 Million-Year-Old 8:15 – 9:15 AM Chesapeake Bay Crater? GRAND BALLROOM III and IV David L. Griscom, impactGlass Research International

Several percent of the pebbles and cobbles found in the gravel component of the ~5,000 km2 “upland deposits” of eastern Virginia, southern Maryland, and the District of Columbia are decorated with external flanges of hard red-brown material with uniform thicknesses. The origin of the “upland deposits” has long posed a riddle to geologists. And the geometry of the red-brown bands internal to the present rocks (not explainable by aqueous diffusion) confronts materials scientists with a puzzle. Dr. Griscom and his coauthors have proposed that the solutions to both the riddle and the puzzle may be linked to the effects of the known impact of a ~5 km-diameter extraterrestrial object 35.5 million years ago into the area that is now the lower Chesapeake Bay (CB) on the U.S. Atlantic Coastal Plain.

Dr. Griscom received his B.S. from Carnegie Institute of Technology (Pittsburgh, PA) in 1960 and his Ph.D. from Brown University (Providence, RI) in 1966. Both degrees were in Physics. In 1967 he became a National Research Council Postdoctoral Associate at the Naval Research Laboratory (NRL) in Washington, DC, where he was employed as a Research Physicist from 1969 until his retirement in January of 2001. He is an author or co-author of six book chapters and of 175 papers in refereed journals, the majority of which deal with electron spin resonance (ESR) studies of paramagnetic ions, radiation-induced point defects, or ferromagnetic precipitates in borate, silicate, or heavy-metal fluoride glasses. His principal research interest since 1973 has been radiation-induced point defects in amorphous silica. His studies of radiation-induced atomic hydrogen in silica with H2O impuri- ties provide support to the widely-accepted “hydrogen” model for the buildup of interface states in metal-oxide-semiconductor (MOS) structures.

Dr. Griscom is a Fellow of the American Physical Society and of the American Ceramic Society. He was a member of the Editorial Advisory Board of the Journal of Non-Crystalline Solids from 1989 until 2001 and has been a member of the American Association for the Advancement of Science since 1969. He has held positions of Invited Professor of Research at Tokyo Institute of Technology, Yokohama, Japan and Fulbright-García Robles Fellow at Universidad Nacional Autónoma de México in Mexico City, where he chose to initiate ESR studies of debris from the bolide impact 65 million years ago that created the 200 km-diameter Chicxulub crater, presently buried about 1 km below México’s Yucatán peninsula. (Following the stunning 1980 publication of Alvarez and coworkers, scientists worldwide have eventually been converted to the belief that this impact triggered the extinction of the dinosaurs.) As Professeur Invité at Laboratoire Minéralogie – Cristallographie de Paris at Université de Paris 6, Paris, France, Griscom extended his studies of Chicxulub-impact materi- als. This work culminated in a major publication in the Springer monograph series, Impact Studies (proceedings of the August 2002 international conference Natural Glasses-4) of Griscom’s surprising case for identifying the 5,000 km2 “upland deposits” of eastern Virginia, southern Maryland, and Washington, DC, as ejecta from the 35.5 million-year-old, 90 km-diameter Chesapeake Bay crater.

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SESSION J RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS 9:15 AM SESSION INTRODUCTION Chair: Marion Rose, Jaycor/Titan Systems

J-1 Proton Response of 4th Generation 350 GHz UHV/CVD SiGe HBTs 9:20 AM Akil K. Sutton, John D. Cressler, Becca M. Haugerud, Yuan Lu, Wei-Min Lance Kuo, Georgia Tech; Paul W. Marshall, Consultant to NASA/GSFC; Robert A. Reed, NASA/GSFC; Jae-Sung Rieh, Greg Freeman, David Ahlgren, IBM Microelectronics

The impact of proton irradiation on the ac and dc characteristics of 4th-generation, 350 GHz SiGe HBTs is reported. Comparisons to prior technology nodes are used to investigate transistor damage mechanisms.

J-2 Proton Tolerance of Advanced SiGe HBTs Fabricated on Different 9:35 AM Substrate Materials Jonathan P. Comeau, Akil K. Sutton, Becca M. Haugerud, John D. Cressler, Wei-Min Lance Kuo, Georgia Tech; Paul W. Marshall, Consultant to NASA/GSFC; Robert A. Reed, NASA/GSFC; Arjun Karroy, Roger Van Art, Jazz Semiconductor

The effects of proton irradiation on the characteristics of SiGe HBTs fabricated on a variety of substrate materials is investigated. Exposure equivalent to 6 Mrad (Si) gamma dose produced modest device degradation for each substrate material.

J-3 Proton Radiation Effects in 4H-SiC Diodes and MOS Capacitors 9:50 AM Zhiyun Luo, Ayayi C. Ahyi, John R. Williams, Auburn University; Tianbing Chen, Akil Sutton, Becca Haugerud, John D. Cressler, Georgia Tech; David C. Sheridan, IBM Microelectronics; Paul W. Marshall, Robert A. Reed, NASA/GSFC

Proton irradiation shows different impact on 4H-SiC SBD and JBS diodes. Unlike JBS diodes, SBDs has little degradation of forward IV performance. Reverse leakage improvement were observed. BV change is consistent with nMOS analysis.

10:05 AM – 10:35 AM BREAK GARDEN COURT

J-4 A Model for TID Effects on Floating Gate Memory Cells 10:35 AM Giorgio Cellere, Alessandro Paccagnella, DEI, Padova University (I); Angelo Visconti, Paolo Caprara, Mauro Bonanomi, STMicroelectronics, Agrate Brianza (I)

We are presenting a new model to describe after Total Ionizing Dose exposure of Floating Gate memory arrays. The model explains an important result: FG devices with smaller area are less sensitive to TID effects.

J-5 Total Dose Radiation Effects on Flash-Based FPGA 10:50 AM Jih-Jong Wang, Salim Samiee, Hung-Sheng Chen, Chang-Kai Huang, Marco Cheung, Brian Cronquist, John McCollum, Actel

The total dose effects of a 0.22 µm Flash-Based FPGA were investigated. The threshold-voltage shift of the floating-gate switch is modeled. The experimental results of the Co-60 are consistent with those of UV illumination.

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J-6 Total Dose Effects on Double Gate Fully Depleted SOI MOSFETs 11:05 AM Bongim Jun, Hao D. Xiong, Claude R. Cirba, Ronald D. Schrimpf, Daniel M. Fleetwood, Vanderbilt University; Sorin Cristoloveanu, ENSERG

Total ionizing dose effects on single gate (SG) and double gate (DG) mode fully-depleted SOI transistors are compared. I-V and 1/f noise measurements show less degradation in irradiated DG mode operated devices.

J-7 Characterization of Enhanced Low Dose Rate Sensitivity (ELDRS) 11:20 AM Effects Using Gated Lateral PNP Transistor Structures D. G. Platteter, G. W. Dunham, J. E. Seiler, NAVSEA Crane; R. L. Pease, RLP Research; H. J. Barnaby, University of Arizona; R. D. Schrimpf, Vanderbilt University; M. R. Shaneyfelt, Sandia National Laboratories; M. C. Maher, National Semiconductor

Using gated lateral PNP transistors, charge trapping and interface state buildup characteristics were measured on an ELDRS-sensitive technology.

POSTER PAPERS

PJ-1 Total Dose Tolerance of Monolithic Millimeter-Wave Transceiver Building Blocks Implemented in 200 GHz SiGe Technology Wei-Min Lance Kuo, Yuan Lu, Becca M. Haugerud, Akil K. Sutton, Ramkumar Krithivasan, John D. Cressler, Georgia Tech; Brian A. Floyd, Brian P. Gaucher, Thomas J. Watson Research Center; Paul W. Marshall, Robert Reed, NASA/GSFC; Greg Freeman, IBM

Total dose tolerance of monolithic transceiver building blocks implemented with 200 GHz SiGe HBTs is reported. The performance degradation is minimal, suggesting that SiGe HBT transceivers should be robust for space without radiation hardening.

PJ-2 Noise Performance of 0.35 µm SOI CMOS Devices and Micropower Preamplifier Following 63 MeV, 1 Mrad (Si) Proton Irradiation David. M. Binkley, Clark. E. Hopper, University of North Carolina at Charlotte; John D. Cressler, Georgia Tech; Mohammad M. Mojarradi, Jet Propulsion Laboratory; Benjamin. J. Blalock, University of Tennessee

This paper presents measured noise for 0.35 µm, silicon-on-insulator devices and a micropower preamplifier following 63 MeV, 1 Mrad (Si) proton irradiation. Flicker noise voltage, important for gyros having low frequency output, increases less than 32% after irradiation.

PJ-3 Impact of 7.5 MeV Proton Irradiation on the Front-Back Gate Coupling Effect in Ultra Thin Gate Oxide FD-SOI n-MOSFETs Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Kumamoto National College of Technology; Joan Marc Rafi, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, IMEC; Michael Kokkoris, Institute of , Tandem Accelerator, NCSR

The degradation of 0.1 µm FD-SOI n-MOSFETs by 7.5 MeV proton irradiation is investigated. The change of the front and back channel parameters, the impact of the gate coupling effect and the floating body effect are clarified. An experimental procedure will be discussed to separate the true front gate degradation from back channel coupling.

37 TechnicalTechnical ProgramProgram FridayFriday

PJ-4 Proton Irradiation Effects on GaN-Based High Electron-Mobility Transistors with Si-Doped Al(x)Ga(1-x)N and Thick GaN Cap Layers Aditya P. Karmarkar, Bongim Jun, Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Weller, Vanderbilt University; Brad D. White, Leonard J. Brillson, The Ohio State University; Umesh K. Mishra, University of California at Santa Barbara

High electron mobility transistors with Si-doped Al(x)Ga(1-x)N and thick GaN cap layers are irradiated with 1.8 MeV protons. Good radiation tolerance up to 1014 protons/cm2 is observed, with displacement damage being the primary degradation mechanism.

PJ-5 The Effects of Proton Irradiation on the Performance of Mm-Wave Transmission Lines Implemented in SiGe Technology Joel Andrews, Matt Morton, Jongsoo Lee, John Papapolymerou, John D. Cressler, Akil Sutton, Becca Haugerud, Georgia Tech; Paul Marshall, Robert Reed, NASA/GSFC; Daehyung Cho, Samsung Electronics Co.

The effects of gamma irradiation on the characteristics of Co-Planar Waveguides (CPW) and Thin Film Microstrip Lines (TFMS) implemented in a commercial SiGe HBT BiCMOS process is reported for the first time.

PJ-6 High Performance Radiation Hardened Flip Flop Design Weizhong Wang, University of Wisconsin - Milwaukee

We propose a new radiation hardened flip flop design suitable for mainstream CMOS processing flow. The simulation results show shorter data to Q delay than sense amplifier type flip flop used in Alpha 21264 microprocessor.

PJ-7 Total Dose Effects In Linear Voltage Regulators P. C. Adell, R. D. Schrimpf, W. T. Holman, J. Todd, S. Caveriviere, K. F. Galloway, Vanderbilt University

Experiments and simulations are used to analyze the total-dose response of a linear . Modification of the bias circuitry of the error-amplifier is shown to harden the system to a significantly higher dose level.

11:35 AM END OF CONFERENCE

38 RESGRESG NEWSNEWS

The forty-first annual Nuclear and Space Radiation Effects Conference (NSREC) will be held in Atlanta, Georgia. This marks the first NSREC that will be held in the eastern half of the U.S. since 1999. The RESG is excited about the opportunity to hold the conference in the outstanding conference facilities at the Renaissance Waverly. The Braves will be in town the weekend before the conference, so plan to arrive early and enjoy outstanding baseball and Atlanta’s warm summer evenings. Buckhead, Midtown, and Virginia-Highlands are among the most popular neighbor- hoods for Atlanta nightlife. The Wednesday evening conference social will be held at the World of Coca-Cola, which tells the story of the beverage that was created in Atlanta over 110 years ago. You’ll be able to sample varieties of Coke products that are served in countries around the globe. The World of Coke is adjacent to Underground Atlanta, which offers a wide array of shops, restaurants, and activities for everyone to enjoy. Dan Fleetwood from Vanderbilt University and his 2004 con- ference committee have put together a strong technical program, as well as social events that will provide frequent opportunities for discussing radiation effects with friends, old and new.

The 2005 NSREC is scheduled for July 11-15, 2005 at the Sheraton Seattle Hotel and Towers in Seattle, Washington. Fred Sexton of Sandia National Laboratories, Conference General Chairman, has selected an excellent conference committee and is well along in the planning process. Ronald D. Schrimpf Chairman Janet Barth of NASA Goddard Space Flight Center is the 2006 Conference General Chairman. Janet has selected Ponte Vedra Beach, on the Florida coast between St. Augustine and Jacksonville, as the conference site. This location is ideal for golfers, as well as those who love beaches or historical sites.

The amount of lead time required to plan a conference is increasing and it currently takes more than three years to plan each NSREC. Lloyd Massengill of Vanderbilt University is the 2007 Conference General Chair; he is currently considering sites for the conference and will host the spring meeting of the RESG in Honolulu.

During the fall RESG meeting in Ponte Vedra Beach, Philippe Paillet of the Commissariat à l’Energie Atomique (CEA, the French Atomic Energy Commission) was selected as Assistant Guest Editor for the December issue of the IEEE Transactions on Nuclear Science. Philippe is the first Guest Editor selected from outside the United States; we look forward to his contributions and new perspective. He has been an active participant in NSREC for a number of years, as well as in RADECS, the European radiation effects conference.

Tim Oldham Executive Vice Chairman

39 RESGRESG NEWSNEWS

ARE YOU A Now is the time to join the Institute of Electrical and Electronics Engineers (IEEE) MEMBER OF IEEE? and the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you get to be a member of the largest professional engineering society in the world. About 60% of NSREC attendees are IEEE members. Full membership in IEEE costs $147. NPSS membership is $15. NPSS members receive a free subscription to NPSS News and have an opportunity to purchase a subscription to the IEEE Transactions on Nuclear Science (electronic or print) for an additional $40.

NPSS members get to vote in our NSREC elections, held at the annual open meeting on Thursday of the conference. If that is not enough, members receive a 25% dis- count on registration fees for the NSREC and Short Course. With a subscription to IEEE Xplore, members can search and view digital copies of NSREC papers (pub- lished since 1989) from an on-line web-based database. What are you waiting for? Apply for membership at http://www.ieee.org or talk to Vern Price at the IEEE registration desk.

NSREC PUBLICATIONS NSREC has three publications each year:

IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at the NSREC Conference. A six issue/year subscription is $950 (only $40 for IEEE/NPSS members).

Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semiconductor components. A copy of the Workshop Record is available for $150 ($75 IEEE members).

NSREC Short Course Notebook. Published each July, this notebook contains tutorial presentations on the basic physics of radiation effects in circuits and systems. It includes the instructor’s notes and text, given to participants of the annual Radiation Effects Short Course. The Archive of Radiation Effects Short Course Notebooks 1980-2003 is available on CD-ROM for $200 ($160 IEEE members). To obtain individual copies of this CD, please visit the IEEE on-line Catalog and Store at http://shop.ieee.org/store or contact IEEE Service Center at 732-981-1393. Ask for IEEE product order code EC146.

A complimentary copy of the 2004 IEEE Radiation Effects Data Workshop Record and one issue of the IEEE Transactions on Nuclear Science will be mailed to each NSREC technical session attendee.

RADIATION EFFECTS You are invited to attend the IEEE Radiation Effects Committee’s Annual Open COMMITTEE Meeting on Thursday, July 22, from 5:00 – 6:30 PM in the Grand Ballroom III and IV. ANNUAL OPEN All conference attendees and spouses are encouraged to attend. We will discuss the MEETING 2004 conference and future IEEE Nuclear and Space Radiation Effects Conferences. There will be an election for the Junior Member-at-Large on the Radiation Effects Steering Group. Nominations will be taken from the floor. All IEEE NPSS members present are eligible to vote. Refreshments will be provided.

40 AwardsAwards

2003 OUTSTANDING Three-Dimensional Mapping of Single Event Effects Using CONFERENCE PAPER Two Photon Absorption AWARD D. McMorrow and J. S. Melinger, of Naval Research Laboratory, W. T. Lotshaw of SFA, Inc., S. Buchner of QSS Group, Inc., Y. Boulghassoul and L. W. Massengill of Vanderbilt University, and R. L. Pease of RLP Research

2003 MERITORIOUS Passivation Layers for Reduced Total Dose Effects and ELDRS in CONFERENCE PAPER Linear Bipolar Devices AWARDS M. R. Shaneyfelt, J. R. Schwank, P. E. Dodd and L. C. Riewe of Sandia National Laboratories, R. L. Pease of RLP Research, M. C. Maher and S. Gupta of National Semiconductor Corporation

SEE Characterization of Vertical DMOSFETs: An Updated Test Protocol J. L. Titus of NAVESEA Crane, and C. F. Wheatley, Consultant

2003 DATA WORKSHOP Analysis of Radiation Effects in Space for Terrestrial Solar Cells on MDS-1 PAPER AWARDS T. Sumita, M. Imaizumi, S.Kawakita, S. Matsuda and S. Kuwajima of National Space Development Agency of Japan, T. Ohshima and T. Kamiya of Japan Atomic Energy Research Institute

In-Flight Observations of Long-Term Single Event Effect Performance on Orbview-2 and Xray Timing Explorer Solid State Recorders C. Poivey of SGT-Inc., J. L. Barth, K. A. LaBel and J. Safren of NASA/GSFC, and G. Gee of SFT-Inc.

IEEE FELLOWS Two distinguished members of the radiation effects community were elected to the grade of IEEE Fellow on January 1, 2004.

Jean-Luc Leray CEA Atomic Energy Commission, Bruyeres-Le-Chatel, France

Jean-Luc Leray’s citation reads, “For contributions to the implementation of radiation hardened silicon-on- and silicon-on-insulator technologies.”

Erik H. M. Heijne CERN, Geneva, Switzerland

Erik’s citation reads, “For contributions to semiconductor detector systems and radiation tolerant detector readout electronics.”

41 AwardsAwards

IEEE NPSS MERIT AWARD Joe Srour is the recipient of the IEEE NPSS Merit Award for 2003. The Merit Award recognizes outstanding technical contributions to the nuclear and plasma sciences field, and is the NPSS’s most prestigious award. The citation reads: “For outstanding technical contributions to the field of radiation effects and for leadership and service to the IEEE.”

2003 RADIATION The 2003 Radiation Effects Award was presented to Klaus G. Kerris, U.S. Army EFFECTS AWARD Research Laboratory (retired), during the opening ceremonies of the 2003 conference. Dr. Kerris received this year’s award with a citation for technical contributions to the dissemination and advancement of radiation effects research and by his leadership in all aspects of the IEEE Nuclear and Space Radiation Effects Conference and the Radiation Effects Steering Group. Klaus passed away this year; he was a long-time member of the radiation effects community, a valued contributor, and a good friend. He will be missed greatly.

2004 RADIATION The winner of the 2004 Radiation Effects Award will be announced Tuesday EFFECTS AWARD morning, July 20.

2005 RADIATION Nominations are currently being accepted for the 2005 IEEE Nuclear and Plasma EFFECTS AWARD Sciences Society (NPSS) Radiation Effects Award. The purpose of the award is to recognize individuals who have had a sustained history of outstanding and innova- tive technical and/or leadership contributions to the radiation effects community.

The basis of the award is for individuals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include benchmark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and/or (2) a demonstrated long-term histo- ry of outstanding and innovative leadership contributions in support of the radia- tion effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the professional development of the members of the radiation effects community.

A cash award and plaque will be presented at the 2005 IEEE NSREC at Seattle, Washington in July 2005. Nomination forms are available electronically in PDF Format or in Microsoft Word format at http://www.nsrec.com/nominate.htm. Additional information can be obtained from Gary Lum, Member-at-Large for the Radiation Effects Steering Group. Gary can be reached at 408-756-0120, [email protected].

42 IndustrialIndustrial ExhibitsExhibits

The 2004 exhibit will be held at the Renaissance Waverly Hotel, in the Habersham Ballroom and Grand Ballroom I and II, Atlanta, Georgia on July 20 and 21, 2004. We are looking forward to another well-attended conference and excellent traffic through both exhibit areas. Food and drink for breaks and the Exhibitor Reception will be held in each of these exhibit areas. The exhibit areas are located just off the spacious Garden Court, and each is located immediately adjacent to the technical sessions.

For additional information, contact:

David Meshel Phone: 410-993-5906 301-429-9070 David Meshel Northrop Grumman Fax: 410-765-5508 301-429-5442 Industrial Exhibits Chairman 4276 Forbes Blvd Email: [email protected] Lanham, MD 20706

Or contact us through the internet at: www.nsrec.com/exhibit.htm

Booth Spaces: $2,200 per 8’ x 10’ area. Included in this cost is: • A link to your company’s web page on the NSREC exhibitor page • One (1) complimentary conference registration per 8’ x 10’ space rented • Two (2) complimentary exhibitor badges granted to the exhibit area for booth staffers (additional exhibitor badges $100 each) • Exhibitor Reception July 20, 2004

As of this writing, several booth spaces are available but as in past years, the exhibit area is filling quickly.

EXHIBIT HALL HOURS Set-Up: Monday, July 19 12:00 PM - 5:00 PM Tuesday, July 20 8:00 AM - 11:00 AM

Show Hours: Tuesday, July 20 11:30 AM - 5:15 PM 2:50 PM - 3:20 PM (conference break) 7:00 PM - 10:00 PM (exhibitor reception) Wednesday, July 21 7:30 AM - 1:00 PM 10:05 AM - 10:35 AM (conference break)

Tear-down: Wednesday, July 21 1:00 PM

43 IndustrialIndustrial ExhibitsExhibits

EXHIBITORS Please check our web site (www.nsrec.com) for a current listing of companies exhibiting at 2004 NSREC.

NSREC Industrial Exhibit Company Internet Site Booth(s) # 3D-Plus www.3d-plus.com 10

Habersham Ballroom Actel www.actel.com 46, 47 Aeroflex Colorado Springs www.aeroflex.com/radhard 40, 41 11 12 13 14 15 16 ATMEL www.atmel.com 28 BAE Systems www.baesystems.com 4 17 Boeing - Phantom Works www.boeing.com 7, 8 10 18 Defense Microelectronics Activity www.dmea.osd.mil 11 9 19 DPA Components International www.dpaci.com 29 8 20 Honeywell Solid State Electronics Co. www.myspaceparts.com 2 7 21 ICS & JL Shepherd & Associates www.jlshepherd.com 9 International Rectifier www.irf.com 26

1 2 3 4 5 6 Interpoint, A Crane Company www.interpoint.com 16 Intersil Corporation www.intersil.com 27 JD Instruments www.jdinstruments.net 44 Lawrence Berkeley www.lbl.gov 12 Grand Ballroom National Laboratory I and II Maxwell Technologies www.maxwell.com 17

34 35 Modular Devices, Inc. www.mdipower.com 19 33 47 MRC Microelectronics www.mrcmicroe.com 30 32 46 NASA Goddard Space Flight Center lws-set.gsfc..gov 6 31 45 NASA Marshall Space Flight Center see.msfc.nasa.gov 20, 21 30 44 Northrop Grumman www.northropgrumman.com 3 Electronic Systems 29 43 Peregrine Semiconductor www.peregrine-semi.com 42 28 42 Corporation 27 41 Prairie View A&M University - NASA www.pvamu.edu 13 26 40 Center for Applied Radiation Research Sandia National Laboratories www.sandia.gov 15 Silvaco International, Inc. www.silvaco.com 5 Survivability, Vulnerability and www.wstc.wsmr.army.mil/ 31 Assessment (SVA) / White Sands capabilities/lab_fac.html Missle Range (WSMR) Texas A&M - Cyclotron Institute cyclotron.tamu.edu 14 US Semiconductor Corporation www.us-semi.com 43 Vanderbilt University - Institute www.isde.vanderbilt.edu 18 for Space and Defense Electronics Xilinix www.xilinx.com 1

44 ConferenceConference InformationInformation

The 2004 IEEE NSREC will be held at the Renaissance Waverly Hotel, conveniently located in the heart of Northwest Atlanta’s business district. Two restaurants and two lounges are featured in the hotel, a fully- equipped Fitness Center with swimming pools, and more than 40 fine shops, movie theaters and restaurants in the adjoining Photograph courtesy of Renaissance Waverly Hotel Galleria Mall.

ROOMS FOR Several meeting rooms are available for use by NSREC attendees during the SIDE MEETINGS conference week at the Renaissance Waverly Hotel. Contact ETC Services at 720-733-2003 or send an e-mail message to [email protected] to make meeting reservations in advance of the conference.

To make a meeting room reservation during the conference, see the NSREC registra- tion desk. All audiovisual equipment and refreshments must be coordinated through the hotel and are the responsibility of the attendee.

MESSAGES A message board will be located in the lobby just outside the conference room for all incoming messages during the NSREC. Faxes can be received through the hotel’s 770-303-3219 guest fax but there must be a cover sheet stating the recipient’s name, noting the FAX: 770-953-0740 NSREC conference, and advising the total number of pages being sent.

CONTINENTAL The 2004 IEEE NSREC will provide continental style breakfasts and refreshments at BREAKFAST AND breaks during the NSREC Short Course and Technical Sessions. Breakfast every day COFFEE BREAKS will begin at 7:30 AM for conference registered attendees only.

BUSINESS CENTER The Renaissance Waverly has a Business Center located just off of the Garden Court on the second floor. Normal hours of operation are 7:00 AM – 8:00 PM on Monday through Thursday, 7:00 AM – 7:00 PM on Friday, 9:00 AM – 5:00 PM on Saturday, and 12:00 N – 5:00 PM on Sunday. Services available include: outgoing fax machine, two computer stations with internet access, two laptop internet access outlet, and two printers. Costs associated with the Business Center services may be charged to your room or paid by cash or credit card.

45 RegistrationRegistration andand TravelTravel

CONFERENCE To pre-register for NSREC, complete the conference registration form enclosed in REGISTRATION this booklet, or register on-line at www.nsrec.com. Please note that registration fees are higher if payment is received after June 18, 2004.

ETC SERVICES, INC. Mail the conference registration form with your remittance to ETC Services, Inc. 2254 EMERALD DRIVE Faxed registrations will be accepted with credit card payment. The registration CASTLE ROCK, CO 80104 form, with payment, should be mailed to arrive no later than seven days prior to the conference, or arrangements should be made to hand carry fees for on-site registra- 720-733-2003 tion. Telephone registrations will not be accepted. You can also register via the FAX: 720-733-2046 internet, provided all of the credit card information is included. Go to the NSREC [email protected] web site for on-line registration at www.nsrec.com.

Registration fees should be made payable to the “2004 IEEE NSREC” and must be in U.S. funds only. There are three ways to remit advanced payment of registration and activity fees: 1) check made out in U.S. dollars and drawn on a U.S. bank, 2) U.S. Money Order, or 3) Mastercard, VISA, or American Express credit card.

ON-SITE REGISTRATION On-site registration for the conference will be located at the dedicated Registration HOURS Desks next to the Grand Ballroom on the Garden Court. The following is the schedule for on-site registration:

Sunday, July 18 5:00 PM – 9:00 PM

Monday, July 19 7:30 AM – 4:00 PM 6:00 PM – 9:00 PM

Tuesday, July 20 7:30 AM – 5:30 PM

Wednesday, July 21 7:30 AM – 3:00 PM

Thursday, July 22 7:30 AM – 3:00 PM

Friday, July 23 7:30 AM – 10:00 AM

REGISTRATION A $25 processing fee will be withheld from all refunds. Due to advance financial CANCELLATION POLICY commitments, refunds of registration fees requested after June 18, 2004 cannot be guaranteed. Consideration of requests for refunds will be processed after the conference. To request a refund, you must notify ETC Services by fax at 720-733-2046 or e-mail at [email protected].

46 RegistrationRegistration andand TravelTravel

HOTEL RESERVATIONS AND INFORMATION

RENAISSANCE WAVERLY The 2004 IEEE NSREC will be held at the Renaissance Waverly in the northwest HOTEL suburbs of Atlanta. This is located near the intersection of I-285 and Cobb Parkway, across the street from the Galleria Mall. This beautiful atrium-style hotel has spa- 2450 GALLERIA PARKWAY cious sleeping rooms with coffeemaker, iron/board, cable TV, and hairdryer. The ATLANTA, GEORGIA 30339 hotel has an excellent steakhouse restaurant, coffee shop, sports bar, and lobby lounge. In addition, the adjacent Galleria Specialty Mall and Convention Center 770-953-4500 has several fast food and full-service restaurants, or you can take the skywalk across TOLL-FREE: 888-391-8724 the street to the expansive Cumberland Mall for a large food court and many other FAX: 770-953-0740 ATTN: dining options. REVENUE MANAGEMENT The group room rate is at $149.00 for single or double occupancy. For additional adults in the room, add $20.00 per person. Children under 18 years of age and sharing a room with an adult are free. In line with the current convention hotel government per diem guidelines, a limited number of rooms are available at the prevailing government rate, currently $112.00 per night, single/double.

MAKING RESERVATIONS All room rates are subject to a 13% state and local tax. All rooms must be guaranteed with a credit card or deposited by check. The cut-off for IEEE NSREC reservations is June 15, 2004. After the cut-off date, room accommodations will be confirmed on a space available basis and the room rate will be higher! EARLY RESERVATIONS ARE STRONGLY SUGGESTED!

AIRPORT AND The Atlanta Hartsfield Airport is located on the southeast side of Atlanta (about TRANSPORTATION a 35 – 45 minute drive) from the Renaissance Waverly. It is the largest and busiest INFORMATION airport in the U.S. and services 23 airlines from all over the world. With multiple terminals, an underground subway system connects passengers with the airline gates, baggage claim, and check-in counters. Directions are well marked.

Taxi service is about $45.00 one-way to the Renaissance Waverly although the rate is subject to change.

AIRPORT SHUTTLE The most reputable, safest and cost-effective transfer service between Atlanta’s DISCOUNT Hartsfield-Jackson Airport and the Renaissance Waverly is on the GALLERIA DIRECT vans run by A&M Limo Corporation. There are other shuttle services but many have multiple stops and are more expensive.

47 RegistrationRegistration andand TravelTravel

From the airport to the Renaissance Waverly, service on the GALLERIA DIRECT runs every half hour from 7:00 AM – 11:00 PM. A discounted rate is applicable IF you make advance reservations. These should be made no more than two weeks prior and no less than two days before travel. The following are the ways reserva- tions can be confirmed:

On-Line Reservations: http://www.galleriadirect.net/reservations.asp Tel: 770-955-4565 Fax: 770-955-5313 Website: www.galleriadirect.net

In each case a credit card will be required to prepay. A special NSREC group rate has been established @ $35.00 roundtrip or $20.00 one-way, per person. Please advise them that you are with the NSREC. Without advance reservation/payment, the full fares for airport transfers are $20.00 cash for one way or $40.00 cash for roundtrip.

DRIVING DIRECTIONS Traveling from the AIRPORT: Follow signs to Camp Creek Parkway. Turn right onto I-285 NORTH. Follow to Exit #19 (Cobb Parkway/Highway 41). Take a right onto Cobb Parkway/Highway 41. Take a left at the first traffic light (Galleria Drive). Follow the road about 1/4 of a mile and the hotel will be on your right.

Traveling WEST on I-20: Take I-285 North Exit. Follow to Exit #19 (Cobb Parkway/Highway 41), turn right on Cobb Parkway. Turn left at the next traffic light (Galleria Drive). Hotel entrance is 1/4 mile on the right.

Traveling EAST on I-20: Take I-285 North Exit. Proceed to Exit #19 (Cobb Parkway/Highway 41), then turn right onto Cobb Parkway. Turn left at the first traffic light. Follow the road about 1/4 of a mile and the Hotel will be on your right.

Traveling SOUTH on I-75: Take Cumberland Blvd Exit. Turn right at the light. Turn right at the first light onto Cobb Galleria Parkway. Take forced left around fountain. Hotel is straight ahead.

Traveling SOUTH on I-85: Take I-285 WEST Exit. Proceed to I-75 North/South and Highway 41/Cobb Parkway. **(Note: Do not take Highway 75, go straight to Highway 41/ Cobb Parkway.) Get in the left-hand lane to turn left onto Cobb Parkway. Go under the overpass. Turn left at the second traffic light (Galleria Drive). Follow the road about 1/4 of a mile and the hotel will be on your right.

Traveling WEST on I-285: Proceed to I-75 North/South and Cobb Parkway/ Highway 41. **(Note: Do not take Highway 75, go straight to Cobb Parkway.) Go under the overpass. Turn left at the second traffic light (Galleria Drive). Follow the road about 1/4 of a mile and the hotel will be on your right.

Traveling NORTH on I-75: Take Cumberland Blvd Exit. Turn left at the light. Turn right at the second light onto Cobb Galleria Parkway. Take forced left around fountain. Hotel is straight ahead.

48 RegistrationRegistration andand TravelTravel

PARKING Self-parking is complimentary to all hotel guests but valet parking is at a nominal fee. Any over-sized vehicles (cars with trailers, RV’s, etc.) will incur a nominal fee and must be registered with the hotel’s Loss Prevention department on arrival.

RENTAL CAR DISCOUNT Avis has been selected as the official rental car agency for the 2004 NSREC and is 800-331-1600 offering discounted rates for the conference attendees. For reservations and infor- mation, call Avis at 800-331-1600 and mention AWD #A606096, or go to the Avis AWD NUMBER A606096 website at www.avis.com. The special conference rates below are available from July 12 through July 30, 2004. However, should a lower qualifying rate become available, Avis will present a 5% discount off that rate. These rates are valid at any Atlanta location: airport, downtown or suburban.

Class Car type Daily (per day) Weekend (per day) Weekly A sub-compact $42.99 $23.99 $179.99 B compact $43.99 $24.99 $188.99 C intermediate $45.99 $26.99 $200.99 D fullsize 2-dr $47.99 $30.99 $209.99 E fullsize 4-dr $49.99 $32.99 $220.99 G premium $53.99 $34.99 $229.99 H luxury $66.99 $67.99 $288.99 V minivan $66.99 $67.99 $288.99 W sport utility $66.99 $67.99 $288.99 K convertible $66.99 $67.99 $288.99

Rates do not include any state or local surcharges, tax, optional coverages, or gas refueling charges. Renter must meet Avis’ age, driver and credit requirements.

The rates above are guaranteed. Return to the same renting location or additional surcharges may apply. Weekend daily rates are available from noon Thursday to 11:59 PM on Monday. All rates include unlimited free mileage.

49

2004 IEEE NSREC Technical and Short Course Registration Form NSREC ATLANTA

Mail or Fax this form and your remittance Name______(payable to 2004 IEEE NSREC) to: Last Name First Name Middle Initial ETC Services, Inc. Name to 2254 Emerald Drive appear on badge ______Castle Rock, CO 80104 720-733-2003 Fax: 720-733-2046 Company/Agency ______REGISTRATION FEES (in U.S. dollars) Mailing Address ______Late fee REQUIRED if payment received after June 18, 2004.

Early Late ______IEEE Member Short Course $230 $280 $______City ______Technical Sessions $375 $450 $______Non-IEEE Member State______Zip Code______Short Course $290 $345 $______Technical Sessions $470 $565 $______Country______Full-Time Students who are IEEE Members * Short Course $115 $280 $______Telephone Number______Technical Sessions $115 $450 $______

Fax Number ______TOTAL AMOUNT ENCLOSED: $______

E-mail Address______PAYMENT OF FEES Enclosed is a check or money order in IEEE MEMBERSHIP U.S. DOLLARS ONLY, drawn on or payable through a U.S. bank. Payable To: 2004 IEEE NSREC. I am an IEEE Member. ______Charge registration fees to my credit card (U.S. dollars): Membership Number American Express Master Card Visa Card Expiration I am not a Member, but I wish to join the IEEE. No. ______Date ______Non-members must register at the non-member rate. Printed Name ______Address ______Address ______CANCELLATIONS Signature ______

A $25 processing fee will be withheld from all refunds. If your company or agency is going to pay by check at Due to advance financial commitments, refunds of reg- a later date, please do not complete the credit istration fees requested after June 18, 2004 cannot be card portion of this form. Only one form of guaranteed. Consideration of requests for refunds will payment is needed. be processed after the conference. * To obtain the full-time student IEEE rate, you must provide your IEEE number on this form.

51

2004 IEEE NSREC Activities Registration Form NSREC ATLANTA

Conference Mail or Fax this form and your remittance Participant ______(payable to 2004 IEEE NSREC) to: ETC Services, Inc. Company/Agency ______2254 Emerald Drive Castle Rock, CO 80104 Address ______720-733-2003 Fax: 720-733-2046

City ______ACTIVITY FEES (in U.S. dollars) Late fee REQUIRED if payment received after June 18, 2004. State______Zip Code______We strongly encourage early registration; note that the number of tickets available after pre-registration for each event is limited. Children must be accompanied Country______by an adult during all tours and social events. Number Total Telephone Number______Early Late Attending Cost Short Course Reception: Sunday, July 18 Fax Number ______Adult/child $0 $0 ______Conference Reception: Monday, July 19 Adult/child $0 $0 ______Accompanying Persons ______Miami Circle Shopping Lunch: Tuesday, July 20 Name Adult/child $28 $36 ______Industrial Exhibits Reception: Tuesday, July 20 Please list ages for children under age 21 only Adult/child $0 $0 ______Downtown Atlanta: Wednesday, July 21 Name Age Adult $38 $48 ______$______Child (age 3-12) $20 $25 ______$______Name Age Child (age 0-2) $0 $0 ______Gone With The Wind Tour: Thursday, July 22 ______Adult $38 $48 ______$______Name Age Child (age 2-10) $22 $27 ______$______Child (age 0-1) $0 $0 ______

TOTAL AMOUNT ENCLOSED: $______CANCELLATIONS

To encourage advanced registration for conference PAYMENT OF FEES social activities, we will refund all activity fees for Enclosed is a check or money order in conference attendees and/or their companions who U.S. DOLLARS ONLY, drawn on or payable for any reason are unable to attend the conference. through a U.S. bank. Payable To: 2004 IEEE NSREC. If your plans change after this form is submitted and you would like to request a refund, you must notify Charge registration fees to my credit card (U.S. dollars): ETC Services by email at [email protected] or American Express Master Card Visa FAX at 720-733-2046 no later than July 13 or notify Card Expiration the conference registration desk when picking up your No. ______Date ______registration materials (but no later than 24 hours before the scheduled activity). Printed Name ______Address ______Address ______Signature ______

53

SocialSocial ProgramProgram

"Have a great time visiting Atlanta!"

Jim Kinnison, JHU/APL Local Arrangements Chairman ©2004, Kevin C. Rose / AtlantaPhotos.com

ATLANTA, GEORGIA An international city with Southern charm, Atlanta is the cosmopolitan center of Georgia and the South. Atlanta is one of the fastest growing cities in the United States, with all the excitement and activity of a major metropolitan area while keep- ing a sense of the history of the city. Visitors to the city can spend the day visiting antebellum homes, learning about the people involved in the civil rights struggles of the mid-20th century, visiting art galleries or wandering through a science museum. After dark, Atlanta is filled with fine dining, active nightlife, or relaxing arts like concerts by a major symphony orchestra. Sports fans will find the city supports teams in all major sports, including the Braves playing at Turner Field during the summer. No matter what you’re looking for, Atlanta has it! The 2004 NSREC Committee has planned a program for everyone to enjoy some of the highlights of the Atlanta area.

Children must be accompanied by an adult during all tours and social events.

SUNDAY, JULY 18 Please join us for refreshments in the Habersham Ballroom from 6:00 PM to 9:00 PM. 6:00 PM TO 9:00 PM The registration desk will be open from 5:00 to 9:00 PM. SHORT COURSE RECEPTION

55 SocialSocial ProgramProgram

MONDAY,JULY 19 Conference attendees and companions are invited to a conference reception from 7:00 PM TO 10:00 PM 7:00 PM to 10:00 PM in the Garden Court and Grand Ballrooms III and IV. Renew CONFERENCE RECEPTION acquaintances or make new friends with your fellow attendees while enjoying complimentary food and drink. Dress is casual. In addition to the daytime hours, the registration desk will be open from 6:00 PM to 9:00 PM.

TUESDAY,JULY 20 ‘You don’t need Tom Wolfe to tell you that the Buckhead section of Atlanta is the 10:30 AM TO 4:30 PM jewel of the city, an area of gracious homes, elegant hotels and shopping centers, as MIAMI CIRCLE SHOPPING well as some of the best restaurants.’ — Florence Fabricant, New York Times. Miami Circle, in Buckhead, is one of Atlanta’s liveliest design and decorating scenes, and becoming one of the “must-see” locations for serious shoppers in the area. The cul-de-sac was originally a light industrial warehouse district along the railroad tracks, and takes its name from one of the early tenants – the Miami Window Co. The Circle is filled with antique shops, art galleries, and small home design shops.

From the gracious service to the Southeast’s widest selection of fresh seafood, Atlanta Fish Market’s comfortable, neighborhood atmosphere is a relaxing retreat from the hustle and bustle of Buckhead. You can't miss the 65-foot copper fish sculpture in front of the restaurant. The train-station styled building welcomes guests with its wide veranda and rocking chairs. Enjoy the sights, sounds and tastes of the Atlanta Fish Market.

Buses will depart the Renaissance Waverly at 10:30 AM for a short bus ride to the Atlanta Fish Market for lunch. Following lunch, buses will take companions to Miami Circle for several hours of wandering among the antiques and art galleries. Buses will leave promptly at 4:00 PM to return to the hotel. This is a casual event, and comfortable clothes and shoes are recommended. Please notify the registration desk if you have special dietary requirements.

TUESDAY,JULY 20 A reception will be 7:00 PM TO 10:00 PM hosted by the NSREC INDUSTRIAL EXHIBITS exhibitors in the RECEPTION Habersham Ballroom and the Grand Ballroom I and II. Along with meet- ing representatives from leading companies in the radiation-hardening industry, enjoy compli- mentary food and drinks for NSREC attendees and their guests.

56 SocialSocial ProgramProgram

WEDNESDAY,JULY 21 The central square in downtown Atlanta is bordered by the Georgia Freight Depot 4:30 PM – 10:30 PM on one side, opposite the World of Coke with the Underground Atlanta shopping DOWNTOWN ATLANTA area in between. The Georgia Freight Depot was completed in 1869 and is one of CELEBRATION the oldest buildings in downtown Atlanta. The building served as the main freight depot for the Georgia Railroad until 1981, when it was restored for use as space for special events. Most of the original brickwork and freight bays remain in place to give guests an idea of how this historic facility looked when it served as an active terminal.

The World of Coke encompasses the rich history and progress of the drink first created in Atlanta more than 110 years ago. While first served in a small pharmacy soda foun- tain near Underground Atlanta, Coca-Cola can now be purchased in over 200 countries across the globe and is served nearly 1 billion times a day. At the World of Coke,

guests can see how a 1930’s era soda jerk ©2004, Kevin C. Rose / AtlantaPhotos.com would prepare a drink for customers, learn about how Coke is made, and try versions of the beverage from an international sampler not available in the United States.

Underground Atlanta occupies the spot where Atlanta sprouted up around the railroad. Originally part of the Freight Depot complex, Underground Atlanta is now a six block shopping area filled with name brand stores and unique boutiques. Underground Atlanta is one of the most popular visitor attractions in ©2004, Kevin C. Rose / AtlantaPhotos.com Georgia, where several million people will visit this year.

Please join us for a short bus ride to downtown Atlanta for a celebration of the 2004 NSREC on Wednesday, July 21. Buses start loading at the Renaissance Waverly at 4:30 PM. On arrival at the square, attendees and companions can visit the World of Coke and browse in the shops of Underground Atlanta, or come to the Freight Depot to visit with other guests. Beverages and appetizers will be served in the Freight Depot starting at 6:30 PM, with buffet dinner beginning at 7:00 PM. One of Atlanta’s top jazz bands will keep the party going during dinner, with dancing afterwards. Buses will begin transporting guests back to the hotel at 9:00 PM with the last bus leaving downtown Atlanta at 10:30 PM.

57 SocialSocial ProgramProgram

THURSDAY,JULY 22 If “Gone with the Wind” is one of your 10:30 AM TO 4:30 PM favorites, this tour is a fun and enter- GONE WITH THE WIND taining look at the true stories behind TOUR one of the world's best loved novels of all time. Our first stop will be Ashley Oaks Mansion in Jonesboro, Georgia for lunch and a walking tour. Built in 1879 by the Sheriff of Clayton County with more than one million hand-made bricks, this family-owned home has been handsomely refurbished with antiques from around the world. After lunch, tour guides in authentic period costumes and relics will create a one of a kind bus tour that transports visitors back to the time of Scarlett O’Hara. Our last stop will be the Road to Tara Museum, home of the world’s largest permanent “Gone With The Wind” exhibit. See how life in Georgia during the years surrounding the Civil War inspired Margaret Mitchell’s

fictional epic. Photographs courtesy of Clayton County CVB www.visitscarlett.com

AEROBICS Get your day started with Dave Bushmire, our own certified aerobics instructor. These lively sessions will take place Tuesday, Wednesday and Thursday at 6:30 AM in the Wilton Room.

ACTIVITIES To encourage advance registration for conference social activities, NSREC will CANCELLATION POLICY refund all activity fees for conference attendees and companions who for any reason are unable to attend the conference. If your plans change after your activities registration form is submitted, request a refund by notifying ETC Services by fax at 720-733-2046 no later than July 13, 2004.

58 LocalLocal ActivitiesActivities

GENERAL INFORMATION Atlanta began as the southern end of the Western and Atlanta railroad as a small town called Terminus. In 1837, the town was renamed Marthasville after the daughter of then governor Wilson Lumpkin. The city was again renamed – this time as Atlanta – in 1847 by an unknown engineer after the Western and Atlantic Railroad, supposedly as a feminine form of “Atlantic.”

By the outbreak of the Civil War, Atlanta was a major railroad hub, manufacturing center and supply depot. But, in 1864, in order to cripple transportation between the South and North, Union General William T. Sherman’s army burned all of the railroad facilities, almost every business and more than two-thirds of the city’s homes to the ground during his infamous “March to the Sea.” Atlanta is the only major American city destroyed by war.

Within four years of Sherman’s attack, Atlanta’s resurgence began. The Georgia capital was moved from Midgeville to Atlanta and a drive to attract new business was underway. Colleges and Universities began to open, telephones were intro- duced and trolleys began to roll. By the late 1920’s a downtown business sector ringed by residential districts had taken shape, giving Atlanta much of the distinct pattern it maintains today. During this time, William B. Hartsfield convinced the city to turn a vacant racetrack into an airport that has become the world’s busiest – Hartsfield Atlanta International Airport.

Much has been accomplished in the last 25 years to elevate Atlanta to world-class status, with events such as the 1988 Democratic National Convention, Superbowls XXVIII and XXXI, and the 2002 NCAA Basketball Final Four. The city hosted the Centennial Olympic Games in 1996, the biggest Olympic Games ever, broadcast to more than 3.5 billion people world-wide.

ATLANTA BRAVES Braves Baseball has been an BASEBALL Atlanta tradition since 1966, when the Milwaukee Braves moved south. Since opening in 1997, Turner Field, the “Home of the Braves” has quickly become an Atlanta landmark. The Braves are in town the weekend before NSREC and during most of the conference week. The

evening game on Saturday, ©2004, Kevin C. Rose / AtlantaPhotos.com July 17 or the afternoon game on Sunday, July 18 against the Montreal Expos is a great opportunity to get together with friends while enjoying some baseball. More information is available at http://atlanta.braves.mlb.com

FERNBANK MUSEUM OF Atlanta’s Fernbank Museum of Natural History opens the door to a world of NATURAL HISTORY dinosaurs, artifacts, IMAX movies, and exhibits such as “A Walk Through Time in Georgia.” The nearby Fernbank Science Center also has an array of exhibits, along with access to the Fernbank Forest – a 65 acre undisturbed mixed hardwood forest. Visitors to the forest can see firsthand the primeval beauty of forestland as early explorers and native Americans did hundreds of years ago. More information is available at http://fsc.fernbank.edu

59 LocalLocal ActivitiesActivities

ATLANTA HISTORY The Atlanta History Center offers historical perspectives for all ages through CENTER interactive exhibitions on the Civil War, folk art and the history of the region. Also experience life on an 1860s working plantation at Tullie Smith Farm or take an elegant look into Atlanta’s past at the 1928 Swan House mansion before strolling through 33 acres of beautiful gardens. For more information, see http://www.atlantahistorycenter.com

MARTIN LUTHER KING, JR Martin Luther King, Jr., National Historic Site includes a number of facilities that are NATIONAL HISTORIC SITE operated in partnership with the National Park Service, Ebenezer Baptist Church and The King Center. Visit the King home where Dr. King was born, the church where he and his father served as ministers, and Fire Station No. 6 that served the Sweet Auburn community. Dr. King’s burial site is also located on the grounds at the King Center. More information is available at http://www.nps.gov/malu/

JIMMY CARTER LIBRARY Atlanta hosts the Jimmy AND MUSEUM Carter Library and Museum, part of the Presidential Library system administered by the National Archives. The Library consists of an archive and museum of the Carter presidency as well as research facilities for historians. The museum offers

photographs and ©2004, Carter Library / AtlantaPhotos.com memorabilia from the Carter Administration, a replica of the Oval Office, and gifts received by the Carters. More information is available at http://www.jimmycarterlibrary.org/

CNN TOWER Located in the heart of Atlanta, the CNN Center is the global headquarters of CNN, and home to Philips Arena, Turner Studios, the official Braves Store, and CNN Studio Tours. CNN Tours offers visitors a unique opportunity to go behind the scenes of CNN's international networks on the CNN Studio Tour, tracing the growth of CNN as it parallels world events over the past 20 years. Visitors are able to ‘see’ news travel though the newsrooms of CNN and Headline News on its way to the anchor’s desk where it is delivered live right before their eyes. Also, located at CNN Center, the TalkBack Live studio is one of the most exciting parts of the CNN Tour – TalkBack Live, an interactive talk show hosted by award winning veteran CNN News anchor, Bobbie Battista, invites viewers to actually participate live along with the studio audience. For more information, see http://www.cnn.com/StudioTour/

MARGARET MITCHELL Docent-led tours feature the furnished apartment where Mitchell wrote Gone With HOUSE the Wind, a movie museum showcasing the portrait of Scarlett and the doorway to Tara, exhibit galleries and museum shop. Located in Midtown, this two-block historic site is listed on the National Register of Historic Places. For more informa- tion, see http://www.gwtw.org

60 LocalLocal ActivitiesActivities

CHATTAHOOCHEE A pristine refuge just minutes away from Atlanta, the Chattahoochee Nature Center NATURE CENTER attracts thousands of visitors each year along the beautiful Chattahoochee River. See hawks swoop, turtles sunbathe and cattails sway along a quiet riverbank. The Center has more than 2 miles of interpretive forest trails, a 1/2 mile riverside boardwalk, and a Discovery Center where injured wildlife live and offer visitors a chance for up-close encounters with native Georgia species. For more information, see http://www.chattahoocheenaturecenter.com/

STONE MOUNTAIN PARK On 3,200 gorgeous acres just 16 miles east of downtown Atlanta, the stories of the South come to life at Stone Mountain Park. The mountain itself is the world’s largest mass of exposed granite. The centerpiece of the Park – and one of the true marvels of western engineering – is found on the mountain’s North side, where you’ll see the world’s largest high relief carving, depicting three heroes of the American Confederacy. Every year, over 4 million visitors enjoy this “eighth Wonder of the World,” as well as the Park’s breathtaking scenery, pristine lakes, forestland, beautiful gardens and miles of nature trails.

As the stars come out, a modern laser animation projection system transforms brilliant, colorful into dramatic stories, historic tales and all sorts of comical characters. With a state-of-the-art surround sound system, dazzling fireworks and a flame cannon shooting fireballs hundreds of feet into the air, the magnificent show has become one of the most popular attractions in all of Georgia. The park also features an enormous variety of recreational and entertainment facilities, including family-oriented attractions, tennis, golf, fishing, hiking and camping. More informa- tion can be found at http://www.stonemountainpark.com

SIX FLAGS OVER GEORGIA For a great day of fun, visit Six Flags Over Georgia, just west of Atlanta on THEME PARK I-20. With 34 thrilling rides for all ages, 6 shows and 8 shopping areas, there’s something for the entire family. If something cool is more to your liking, try Six Flags White Water - rated one of the top ten water parks in the U.S. With over fifty attractions, there’s plenty to do! For more information, see http://www.sixflags.com/parks/overgeorgia/index.asp

SHOPPING Atlanta has many great shopping experiences. Connected to the Renaissance Waverly is the Galleria, with specialty shops. Just across Cobb Parkway from the Renaissance Waverley is the Cumberland Mall with over 150 shops. Best of all, there’s a walkway from the hotel through the Galleria right to the Cumberland Mall entrance.

Of course, no trip to Atlanta would be complete without a shopping excursion to Buckhead. Together Lenox Square Mall and Phipps Plaza in Buckhead offer the most concentrated collection of upscale stores available anywhere in the United States. Stores include Saks Fifth Avenue, Tiffany & Co. and Burberry. More infor- mation can be found at http://www.buckhead.net/shopping/

WEATHER AND CLOTHING The average daily temperature in July is 80° F, with high humidity. Atlanta averages about 5 inches of rain in July. Visitors should dress for warm weather and wear suncreen when outside for a long time. Remember, though, that conference rooms are usually cold, so attendees will want to dress a bit more warmly when in sessions.

61 20042004 ConferenceConference CommitteeCommittee

General Chair Technical Program Local Arrangements Short Course Daniel M. Fleetwood Jim Pickel Jim Kinnison Joe Srour Vanderbilt University PRT, Inc JHU/APL The Aerospace Corporation 615-322-2498 760-451-2256 240-228-6169 310-336-2565 Fax: 615-343-6702 Fax: 309-273-8483 Fax: 240-228-6696 Fax: 310-336-5581 dan.fleetwood@ [email protected] [email protected] [email protected] vanderbilt.edu

Publicity Finance Awards Industrial Exhibits Teresa Farris Robert Reed Dave Beutler David Meshel Aeroflex Colorado Springs NASA/GSFC Sandia National Northrop Grumman 719-594-8035 301-286-2153 Laboratories 410-993-5906 Fax: 719-594-8468 Fax: 301-286-4699 505-845-7068 Fax: 410-765-5508 [email protected] [email protected] Fax: 505-844-0092 [email protected] [email protected]

Guest Editor Associate Guest Editor Assistant Guest Editor Lew Cohn John Cressler Philippe Paillet DTRA Georgia Tech CEA, France 703-325-1156 404-894-5161 33 1 69 26 50 89 Fax: 703-325-2959 Fax: 404-894-4641 Fax: 33 1 69 26 70 53 [email protected] [email protected] [email protected]

62 OfficialOfficial ReviewersReviewers

Wayne Abare, Harris Semiconductor Keith Forbes, Motorola Jason Moore, Xilinx Dennis Adams, Northrop Grumman G. Gasiot, STMicroelectronics Steve Moss, The Aerospace Corporation Dave Alexander, AFRL/VSSE Patrick Griffin, SNL Neal Nickles, Ball Aerospace Joe Azarewicz, Titan/Jaycor David Hansen, Boeing Satellite Eugene Normand, Boeing J. Baggio, CEA-DAM Systems Timothy Oldham, NASA/GSFC/QSS Janet Barth, NASA/GSFC Tino Heijmen, Philips Group. Inc. Bill Bartholet, The Boeing Company Daniel Heynderickx, BIRA Alessandro Paccagnella, Universita di Padova Robert Bauman, Texas Instruments David Hiemstra, MD Robotics Tet Pang, Consultant Mark Baze, Boeing Seattle Joe Hockmuth, General Dynamics Ron Pease, RLP Research Ewart Blackmore, TRIUMF Jim Howard, Jackson & Tull/NASA/GSFC Chi Pham, JHU/APL Nicholas Boruta, Locheed Martin Space Systems Hap Hughes, NRL Christian Poivey, SGT, Inc. Benoit Brichard, SCK CEN Stuart Huston, SAIC Robert Reed, GSFC Ron Brown, BAE Systems Kay Jobe, Boeing Satellite Systems Anatoly Rosenfeld, Wollongong Stephen Buchner, QSS/NASA/GSFC Zach Johnson, Boeing Olivier Saint Pe, EADS Astrium Laura Burcin, BAE Systems Allan Johnston, Jet Propulsion Steve Sampson, AFRL/VSSE Laboratory Edward Burke, Consultant Mark Savage, NAVSEA Crane Anthony Jordan, Aeroflex Colorado Arthur Campbell, NRL Guenter Schindlbeck, Infineon Springs Cosmo Carlone, University of Ron Schrimpf, Vanderbilt University Insoo Jun, JPL Sherbrooke James Schwank, Sandia National Shashi Karna, ARL Giorgio Cellere, Padova Laboratories Nam Kha, General Dynamics Anne Clark, DTRA Norbert Seifert, Intel Dan King, King Space Research Steve Clark, AFRL Fred Sexton, Sandia National Ken LaBel, NASA/GSFC Laboratories Steve Clark, NSWC Ron Lacoe, The Aerospace Corporation Marty Shaneyfelt, Sandia National Lew Cohn, DTRA Ray Ladbury, Orbital Sciences Laboratories Susan Crain, The Aerospace Mayrant Simons, RTI Corporation Patrick Lenahan, Penn State University Jeff Sokol, Jet Propulsion Laboratory Mary D'Ordine, Ball Aerospace Gary Lum, Lockheed Martin Joe Srour, The Aerospace Corporation Rob Davies, Ball Aerospace K. K. Ma, Sandia National Laboratories E. G. Stassinopoulos, NASA/GSFC Bronek Dichter, AFRL Paul Marshall, Consultant Dennis Thompson, Kodak Paul Dodd, Sandia National Laboratories Cheryl Marshall, NASA/GSFC Jeff Titus, NAVSEA - Crane Division Mary Ann Dooley, The Boeing Lloyd Massengill, Vanderbilt Mike Tostanoski, MRC Company University Jean-Roch Vaille, Montepellier II Tom Dubos, Goodrich Optical Systems Richard Maurer, JHU/APL Ed Waller, University of Ontario Paul Dudek, JHU/APL Dave Mavis, MRC Micro Institute of Technology Clive Dyer, Qinetiq Dale McMorrow, NRL Todd Weatherford, Naval Postgraduate School James Felix, Sandia National Peter McNulty, Clemson University Laboratories Scott Messenger, SFA, Inc. Barry Willits, Spectrum Astro, Inc. Veronique Ferlet-Cavrois, CEA Kyle Miller, Mission Research Cary Zeitlin, LBL Dan Fleetwood, Vanderbilt University Ali Mohammadzadeh, ESA ESTEC Vivian Zhu, Texas Instruments Rich Flores, Sandia National John Monk, National Semiconductor James Ziegler, US Naval Academy Laboratories Corporation

63 RadiationRadiation EffectsEffects SteeringSteering GroupGroup

Chairman Executive Vice-Chairman Secretary Ronald D. Schrimpf Timothy R. Oldham Jeffrey D. Black Vanderbilt University NASA Goddard Mission Research Corporation Electrical Eng. and Comp. Science Code 561.4 5001 Indian School Road, NE P.O. Box 1608, Station B Building 22, Room 048 Albuquerque, NM 87110 Nashville, TN 37235 Greenbelt, MD 20771 505-768-7709 fax: 505-768-7601 615-343-0507 fax: 615-343-0601 301-286-5489 fax: 301-286-4699 [email protected] [email protected] [email protected] (Term expires: 7/06) (Term expires: 7/06) (Term expires: 7/06)

Past Chairman Senior Member-at-Large Member-at-Large Dale G. Platteter Ronald L. Pease Gary K. Lum NAVSEA Crane RLP Research Lockheed Martin Code 605, Building 3334 8 Songbird Lane Orgn. L4, Bldg. 157 300 Highway 361 Los Lunas NM 87031 1111 Lockheed Martin Way Crane, IN 47522-5001 505-565-0548 fax: 505-323-2212 Sunnyvale, CA 94088 812-854-1206 fax: 812-854-1751 [email protected] 408-756-0120 fax: 408-734-2005 [email protected] (Term expires: 7/04) [email protected] (Term expires: 7/06) (Term expires: 7/05)

Junior Member-at-Large Vice-Chairman, Publications Vice-Chairman, Publicity Steven L. Clark Marty Shaneyfelt Teresa Farris Air Force Research Lab Sandia National Laboratories Aeroflex Colorado Springs 3550 Aberdeen Ave., SE P.O. Box 5800, MS-1083 4350 Centennial Blvd. Kirtland AFB, NM 87117-7556 Albuquerque, NM 87185-1083 Colorado Springs, CO 80907-3486 505-846-6067 fax: 505-853-2205 505-844-6137 fax: 505-844-2991 719-594-8035 fax: 719-594-8486 [email protected] [email protected] [email protected] (Term expires: 7/06) (Term expires: 7/06) (Term expires: 7/06)

Special Publications Assignment Vice-Chairman, 2004 Conference Vice-Chairman, 2005 Conference Paul V. Dressendorfer Daniel M. Fleetwood Fred W. Sexton Sandia National Laboratories Vanderbilt University Sandia National Laboratories MS 1413 / Department 1141 Electrical Eng. and Comp. Science MS 1081 / Department 1762 P.O. Box 5800 P.O. Box 92, Station B P.O. Box 5800 Albuquerque, NM 87185-1413 Nashville, TN 37235 Albuquerque, NM 87185-1081 505-844-5373 fax: 505-844-5470 615-322-2498 fax: 615-343-6702 505-844-3927 fax: 505-844-2991 [email protected] [email protected] [email protected]

Vice-Chairman, 2006 Conference Vice-Chairman, 2007 Conference NPSS AdCom Member Janet L. Barth Lloyd W. Massengill Dennis B. Brown NASA/GSFC Vanderbilt University National Reconnaissance Office Code 561.4 Electrical Eng. & Comp. Science AS&T Div. Building 22, Room 046 Box 1683, Station B 14675 Lee Rd. Greenbelt, MD 20771 Nashville, TN 37235 Chantilly, VA 20151 301-286-8046 fax: 301-286-4699 615-343-6677 fax: 615-343-6614 703-808-5290 fax: 703-808-2646 [email protected] [email protected] [email protected] (Term expires: 12/05)

NPSS AdCom Member NPSS AdCom Member RADECS Liaison Joseph M. Benedetto Allan H. Johnston Robert Ecoffet Mission Research Corporation Jet Propulsion Laboratory DTS/AQ/EQE/ER 5017 North 30th Street MS 303-220 CNES - Toulouse Space Center Colorado Springs, CO 80919 4800 Oak Grove Drive 18 Avenue Edouard Belin 719-633-2344 x177 fax: 719-532-1926 Pasadena, CA 91109 31401 Toulouse Cedex 4, France [email protected] 818-354-6425 fax: 818-393-4559 33.5.61.28.17.96 fax: 33.5.61.27.47.32 (Term expires: 12/06) [email protected] [email protected] (Term expires: 12/07) (Term expires: 7/06)

64 ANNOUNCEMENTANNOUNCEMENT andand FIRSTFIRST CALLCALL FORFOR PAPERSPAPERS

2005 IEEE NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE Short Course and Radiation Effects Data Workshop July 11 - 15, 2005 Sheraton Seattle Hotel and Towers Seattle, Washington www.nsrec.com The 2005 IEEE International Nuclear and Space Radiation Effects Conference will be held July 11 - 15 in Seattle, Washington at the Sheraton Seattle Hotel and Towers. Sponsored By The Conference features a technical program consisting of eight to ten sessions of IEEE/NPSS Radiation Effects Committee contributed papers describing the latest observations in radiation effects, an Supported By up–to–date Short Course offered on July 11, a Radiation Effects Data Workshop, and Defense Threat Reduction Agency an Industrial Exhibit. The technical program includes oral and poster sessions. Sandia National Laboratories Air Force Research Laboratory Papers describing nuclear and space radiation effects on electronic and photonic NASA Electronic Parts and materials, devices, circuits, sensors, and systems, as well as semiconductor process- Packaging Program ing technology and techniques for producing radiation-tolerant (hardened) devices Jet Propulsion Laboratory and integrated circuits, will be presented at this meeting of engineers, scientists, and Conference Committee managers. International participation is strongly encouraged. General Chair We are soliciting papers describing significant new findings in the following Fred Sexton or related areas: Sandia National Laboratories 505-844-3927 Basic Mechanisms of Radiation Effects in Electronic Materials and Devices Technical Program Ionizing Radiation Effects Michael Xapsos Materials and Device Effects NASA Goddard Space Flight Center 301-286-2263 Displacement Damage Single-Event Charge Collection Phenomena and Mechanisms Local Arrangements Radiation Transport, Energy Deposition and Dosimetry Kay Jobe Boeing Satellite Systems Processing-Induced Radiation Effects 310-416-3705 Radiation Effects on Electronic and Photonic Devices and Circuits Short Course MOS, Bipolar and Advanced Technologies Allan Johnston Jet Propulsion Laboratory SOI and SOS Technologies 818-354-6425 Optoelectronic and Optical Devices and Systems Publicity Methods for Hardened Design and Manufacturing Teresa Farris Modeling of Devices, Circuits and Systems Aeroflex Colorado Springs Particle Detectors and Associated Electronics for High-Energy Accelerators 719-594-8035 Cryogenic Temperature Effects Finance Single-Event Effects Ron Lacoe Novel Device Structures, such as MEMS The Aerospace Corporation 310-336-0118 Space, Atmospheric, and Terrestrial Radiation Effects Awards Characterization and Modeling of Radiation Environments Jim Kinnison Space Weather Effects Johns Hopkins/APL Spacecraft Charging 240-228-6169 Industrial Exhibits Hardness Assurance Technology and Testing Nazik Maloyan Testing Techniques, Guidelines and Hardness Assurance Methodology International Rectifier Facilities 310-726-8412 Dosimetry Guest Editor John Cressler Commercial Space Systems Georgia Tech 404-894-5161 New Developments of Interest to the Radiation Effects Community PAPER SUMMARY DEADLINE: FEBRUARY 4, 2005

65 PROCEDURE FOR SUBMITTING SUMMARIES Authors must conform to the following requirements: Summaries must be received by 1. Electronically submit a single Adobe Acrobat file consisting of (a) an abstract February 4, 2005 no longer than 35 words on the first page, followed by (b) an informative two to four page summary (describing results appropriate for a 12-minute oral or poster presentation). The summary must include sufficient detail about the Detailed submission and work to permit a meaningful technical review. In the summary clearly indicate formatting instructions (a) the purpose of your work, (b) significant new results with supporting will be available after technical material, and (c) how your work advances the state of the art. October 1, 2004 2. The summary must be no less than two and no more than four pages in at www.nsrec.com length, including figures and tables (one additional page is allowed for the 35-word abstract). All figures and tables must be large enough to be clearly read. Note that this is more than an abstract, but do not exceed four pages. 3. Type your summary using 11 point or greater type on either U.S. Standard, 8.5 inch (21.6 cm) x 11 inch (27.9 cm), or A4, 21 cm x 29.7 cm, white paper, with 1 inch (2.5 cm) margins on all four sides. Please include title, names and company affiliations of the authors, and company address (city and state). Underline the name of the author presenting the paper. 4. Obtain all corporate, sponsor, and government approvals and releases necessary for presenting your paper at an open-attendance international meeting. 5. Include a cover letter giving (a) the names, complete addresses, telephone and FAX numbers, and e-mail addresses of all authors, and (b) the session that you prefer for presentation (if you have a preference). A complete list of session names will be available at www.nsrec.com. Authors are also encouraged to state their preference for an oral or poster presentation in the conference, or a poster at the data workshop. However, the final category of all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers from initial submissions.

Papers accepted for oral or poster presentation at the technical program will be eligible for publication in the Conference issue of the IEEE Transactions on Nuclear Science (December 2005), based on a separate submission of a complete paper, and subject to an independent review after the Conference. Further information will be sent to prospective authors upon accept- ance of their NSREC summary. It is not necessary to be an IEEE member to present a paper or attend the NSREC. However, we strongly encourage IEEE membership of all NSREC participants.

RADIATION EFFECTS DATA WORKSHOP The Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems. Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in a radiation environment, and for designers of radiation–hardened systems. Papers describing new simulation or radiation facilities are also welcomed. The procedure for submitting a summary to the Workshop is identical to the procedure for sub- mitting NSREC summaries. Radiation Effects Data Workshop papers will be published in a Workshop Record and are not candidates for publication in the Conference issue of the IEEE Transactions on Nuclear Science.

SEATTLE,WASHINGTON The combination of water, hills and lush greenery, set against a backdrop of far-off mountains, including the spectacular Mt. Ranier, makes Seattle one of the most beautiful urban areas in the U.S. Truly, the bluest skies are in Seattle, and the days are long and warm in July, where the amount of rainfall is less than Phoenix during that month. Everyone takes advantage of the outdoors! This easily accessible and user-friendly city has numerous fine restaurants, interesting museums, and a vigorous arts scene in the downtown area. Unique attractions draw visitors and locals alike, such as the Pike Place Market, where displays of wearable art, fresh fruits and vegetables, and huge bouquets of fresh flowers fill the senses with wonderful colors and delicious scents. Cycling and walking trails interlace Photograph courtesy of Seattle's Convention and Visitors Bureau the urban area, and local ferries interconnect nearby islands, More information about Seattle can be found at providing yet another fun and unique way to tour the area. http://www.pan.ci.seattle.wa.us/

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