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MCP16331 Data Sheet

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MCP16331 Data Sheet MCP16331 High-Voltage Input Integrated Switch Step-Down Regulator Features General Description • Up to 96% Efficiency The MCP16331 is a highly integrated, high-efficiency, • Input Voltage Range: 4.4V to 50V fixed frequency, step-down DC-DC converter in a popular • Output Voltage Range: 2.0V to 24V 6-pin SOT-23 or 8-pin 2x3 TDFN package that operates • 2% Output Voltage Accuracy from input voltage sources up to 50V. Integrated features • Qualification: AEC-Q100 Rev. G, Grade 1 include a high-side switch, fixed frequency Peak Current- (-40°C to 125°C) Mode control, internal compensation, peak current limit • Integrated N-Channel Buck Switch: 600 m and overtemperature protection. Minimal external com- • Minimum 500 mA Output Current Over All Input ponents are necessary to develop a complete step-down Voltage Ranges (see Figure 2-9 for Maximum DC-DC converter power supply. High converter efficiency is achieved by integrating the Output Current vs. VIN) - Up to 1.2A output current at 3.3V and current-limited, low-resistance, high-speed N-Channel MOSFET and associated drive circuitry. High switching 5V VOUT, VIN > 12V, SOT-23 package at +25°C ambient temperature frequency minimizes the size of external filtering components, resulting in a small solution size. - Up to 0.8A output current at 12V VOUT, The MCP16331 can supply 500 mA of continuous VIN > 18V, SOT-23 package at +25°C ambient temperature current while regulating the output voltage from 2.0V to •500 kHz Fixed Frequency 24V. An integrated, high-performance Peak Current- • Adjustable Output Voltage Mode architecture keeps the output voltage tightly regu- lated, even during input voltage steps and output current • Low Device Shutdown Current transient conditions that are common in power systems. • Peak Current Mode Control The EN input is used to turn the device on and off. • Internal Compensation While off, only a few µA of current are consumed from • Stable with Ceramic Capacitors the input for power shedding and load distribution • Internal Soft Start applications. This pin is internally pulled up, so the • Internal Pull-up on EN device will start, even if the EN pin is left floating. • Cycle-by-Cycle Peak Current Limit Output voltage is set with an external resistor divider. • Undervoltage Lockout (UVLO): 4.1V to Start; The MCP16331 is offered in a space-saving 6-lead 3.6V to Stop SOT-23 and 8-lead 2x3 TDFN surface mount package. • Overtemperature Protection • Available Package: 6-Lead SOT-23, Package Type 8-Lead 2x3 TDFN MCP16331 Applications 6-Lead SOT-23 •PIC® MCU/dsPIC® DSC Microcontroller Bias BOOST 1 6 SW Supply GND 2 5 V • 48V, 24V and 12V Industrial Input IN DC-DC Conversion VFB 3 4 EN • Set-Top Boxes (STB) • DSL Cable Modems MCP16331 • Automotive 8-Lead 2x3 TDFN* • AC/DC Adapters SW 1 8 V • SLA Battery-Powered Devices IN • AC-DC Digital Control Power Source EN 2 EP 7 BOOST 9 • Power Meters NC 3 6 VFB •Consumer NC 4 5 GND • Medical and Health Care • Distributed Power Supplies *Includes Exposed Thermal Pad (EP); see Table 3-1. 2014-2016 Microchip Technology Inc. DS20005308C-page 1 MCP16331 Typical Applications 1N4148 C BOOST V 100 nF L1 OUT VIN BOOST 15 µH 3.3V at 500 mA 4.5V to 50V SW VIN 100V C Schottky OUT 2 X10 µF CIN Diode 2x10 µF EN 31.6 k 20 pF Optional VFB GND 10 k 1N4148 CBOOST L1 VOUT BOOST 100 nF VIN 22 µH 5.0V at 500 mA 6.0V to 50V SW VIN 100V COUT Schottky 2 X10 µF CIN Diode 2x10 µF EN 52.3 k 20 pF Optional VFB GND 10 k Note: EN has an internal pull-up, so the device will start even if the EN pin is left floating. 100 V =5V 90 OUT 80 V =3.3V 70 OUT 60 50 40 Efficiency (%) (%) Efficiency 30 20 10 VIN=12V 0 10 100 1000 Output Current (mA) DS20005308C-page 2 2014-2016 Microchip Technology Inc. MCP16331 1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum CHARACTERISTICS Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indi- Absolute Maximum Ratings† cated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for VIN, SW ............................................................... -0.5V to 54V BOOST – GND ................................................... -0.5V to 60V extended periods may affect device reliability. BOOST – SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short-Circuit Current .................................Continuous Power Dissipation .......................................Internally Limited Storage Temperature ....................................-65°C to +150°C Ambient Temperature with Power Applied ......-40°C to +125°C Operating Junction Temperature...................-40°C to +160°C ESD Protection on All Pins: HBM.....................................................................4 kV MM ......................................................................300V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST – VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 x 10 µF X7R Ceramic Capacitors. Boldface specifications apply over the TA range of -40°C to +125°C. Parameters Sym. Min. Typ. Max. Units Conditions Input Voltage VIN 4.4 — 50 V Note 1 Feedback Voltage VFB 0.784 0.800 0.816 V Output Voltage Adjust Range VOUT 2.0 — 24 V Note 1, Note 3 Feedback Voltage |VFB/VFB)/VIN| — 0.002 0.1 %/V VIN = 5V to 50V Line Regulation Feedback Voltage |VFB/VFB| — 0.13 0.35 % IOUT = 50 mA to Load Regulation 500 mA Feedback Input Bias Current IFB — +/- 3 — nA Undervoltage Lockout Start UVLOSTRT — 4.1 4.4 V VIN rising Undervoltage Lockout Stop UVLOSTOP 3 3.6 — V VIN falling Undervoltage Lockout UVLOHYS — 0.5 — V Hysteresis Switching Frequency fSW 425 500 550 kHz Maximum Duty Cycle DCMAX 90 93 — % VIN = 5V; VFB = 0.7V; IOUT = 100 mA Minimum Duty Cycle DCMIN — 1 — % Note 4 NMOS Switch-On Resistance RDS(ON) — 0.6 — VBOOST – VSW = 5V, Note 3 NMOS Switch Current Limit IN(MAX) — 1.3 — A VBOOST – VSW = 5V, Note 3 Quiescent Current IQ — 1 1.7 mA VIN = 12V; Note 2 Quiescent Current – Shutdown IQ — 6 10 A VOUT = EN = 0V Output Current IOUT 500 — — mA Note 1; see Figure 2-9 Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. 2: VBOOST supply is derived from VOUT. 3: Determined by characterization, not production tested. 4: This is ensured by design. 2014-2016 Microchip Technology Inc. DS20005308C-page 3 MCP16331 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST – VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 x 10 µF X7R Ceramic Capacitors. Boldface specifications apply over the TA range of -40°C to +125°C. Parameters Sym. Min. Typ. Max. Units Conditions EN Input Logic High VIH 1.9 — — V EN Input Logic Low VIL — — 0.4 V EN Input Leakage Current IENLK — 0.007 0.5 µA VIN = EN = 5V Soft Start Time tSS — 600 — µs EN Low-to-high, 90% of VOUT Thermal Shutdown Die TSD — 160 — C Note 3 Temperature Die Temperature Hysteresis TSDHYS — 30 — C Note 3 Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. 2: VBOOST supply is derived from VOUT. 3: Determined by characterization, not production tested. 4: This is ensured by design. TEMPERATURE SPECIFICATIONS Electrical Specifications Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Operating Junction Temperature Range TJ -40 — +125 °C Steady State Storage Temperature Range TA -65 — +150 °C Maximum Junction Temperature TJ — — +160 °C Transient Package Thermal Resistances Thermal Resistance, 6L-SOT-23 JA — 190.5 — °C/W EIA/JESD51-3 Standard Thermal Resistance, 8L-2x3 TDFN JA — 52.5 — °C/W EIA/JESD51-3 Standard DS20005308C-page 4 2014-2016 Microchip Technology Inc. MCP16331 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA, TA = +25°C, 6-Lead SOT-23 package. 100 100 V = 6V 90 IN 90 80 80 70 VIN = 12V 70 60 60 VIN = 48V V = 24V 50 IN 50 V = 48V 40 IN 40 Efficiency (%) Efficiency 30 (%) Efficiency 30 20 20 10 10 0 1 10 100 1000 0 1101001000 I (mA) OUT IOUT (mA) FIGURE 2-1: 3.3V VOUT Efficiency vs. FIGURE 2-4: 24V VOUT Efficiency vs. IOUT. IOUT. 100 100 90 90 VIN = 12V 80 80 IOUT= 500 mA 70 70 VIN = 24V 60 60 IOUT= 100 mA 50 VIN = 48V 50 40 40 Efficiency (%) (%) Efficiency Efficiency (%) Efficiency 30 30 IOUT= 10 mA 20 20 10 10 0 0 1 10 100 1000 6 1014182226303438424650 IOUT (mA) VIN (V) FIGURE 2-2: 5V VOUT Efficiency vs. IOUT. FIGURE 2-5: 3.3V VOUT Efficiency vs. VIN. 100 100 90 90 IOUT = 500 mA 80 80 VIN = 48V 70 VIN = 24V 70 IOUT = 100 mA 60 60 50 50 40 40 Efficiency (%) Efficiency Efficiency (%) Efficiency 30 30 IOUT = 10 mA 20 20 10 10 0 0 1 10 100 1000 6 1014182226303438424650 IOUT (mA) VIN (V) FIGURE 2-3: 12V VOUT Efficiency vs.
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