Spintronic Devices: a Promising Alternative to CMOS Devices

Total Page:16

File Type:pdf, Size:1020Kb

Spintronic Devices: a Promising Alternative to CMOS Devices Journal of Computational Electronics https://doi.org/10.1007/s10825-020-01648-6 Spintronic devices: a promising alternative to CMOS devices Prashanth Barla1 · Vinod Kumar Joshi1 · Somashekara Bhat1 Received: 18 September 2020 / Accepted: 26 December 2020 © The Author(s) 2021 Abstract The feld of spintronics has attracted tremendous attention recently owing to its ability to ofer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infnite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary feld of spintronics. It includes various physi- cal phenomena such as the giant magnetoresistance efect, tunnel magnetoresistance efect, spin-transfer torque, spin Hall efect, voltage-controlled magnetic anisotropy efect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics feld for a novice. Keywords Spintronics · Magnetic tunnel junction · Domain wall · All spin logic devices · Skyrmion Abbreviations FL Free layer 2D Two dimensions FM Ferromagnetic 3D Three dimensions GMR Giant magnetoresistance AP Antiparallel HDD Hard disk drive ASL All spin logic IMA In-plane magnetic anisotropy CAD Computer-aided design ISHE Inverse spin Hall efect CPU Central processing unit LIM Logic-in-memory DI-MTJ Double-interface magnetic tunnel junction LLG Landau–Lifshitz–Gilbert DMI Dzyaloshinskii–Moriya interaction LUT Look-up table DMTJ Double-barrier magnetic tunnel junction MOSFET Metal-oxide-semiconductor feld-efect DOS Density of state transistor DRAM Dynamic random access memory MRAM Magnetoresistance random access memory DW Domain wall MTJ Magnetic tunnel junction FeRAM Ferroelectric random access memory NM Non-magnetic FIMS Field-induced magnetic switching P Parallel PCRAM Phase change random access memory PL Pinned layer * Vinod Kumar Joshi PMA Perpendicular plane magnetic anisotropy [email protected] RM Racetrack memory 1 Department of Electronics and Communication Engineering, ReRAM Resistive random access memory Manipal Institute of Technology, Manipal Academy SHE Spin Hall efect of Higher Education, Manipal 576104, India Vol.:(0123456789)1 3 Journal of Computational Electronics SOI Spin–orbit interaction power, high performance storage, and processing units with SOT Spin–orbit torque the CMOS-only technology [11]. In order to fulfll these SRAM Static random access memory aggressive demands, semiconductor fabs and device engi- STT Spin transfer torque neers have come up with the variants of semiconductors such TAS Thermal-assisted switching as fn feld-efect transistor (FinFET) [12, 13] and carbon TMR Tunnel magnetoresistance nanotube feld-efect transistor (CNTFET) [14, 15] devices. VCMA Voltage controlled magnetic anisotropy Circuits consisting of these devices have promised to reduce the power dissipation to some extent and are widely used at present in ICs. However, there is an urge to fnd alternatives 1 Introduction for the future, which leads to go beyond CMOS technology [10, 16, 17]. The semiconductor industry has been consist- Advancements in the feld of fabrication technology have ently putting down the road map for future technological sustained the downscaling of CMOS technology over the growth by outlining the developments in materials, devices, past fve decades due to which performance of the inte- and systems that can maintain and enhance the storage as grated circuits (ICs) has consistently improved following well as the computational capacity of current ICs [18]. the Moore’s law [1, 2]. In 2020, TSMC (Taiwan Semicon- Spintronics is considered as one of the most promising ductor Manufacturing Company, Limited) is able to success- future technology, in the impending post CMOS era [19–22]. fully manufacture 54 billion MOSFETs to develop Nvidia’s Remarkable advancements in thin-flm fabrication technol- GA100 Ampere GPU, and back in 2019, it has manufactured ogy to build highly interfacial anisotropic magnetic devices 39.54 billion MOSFETs for commercially available AMD’s along with spin transportation and spin manipulation tech- Zen2 processor architecture using 7nm process technology niques has grown enormous interests among researchers. [3]. However, further scaling is becoming extremely dif- In-fact, we are already reaping the benefts of spintronics cult as the transistor size reaches few atomic layers, and the application since 1994, after the introduction of GMR (giant quantum efect starts to kicks-in [4]. This can lead to an magnetoresistance) read heads for hard disk drive (HDD) increased leakage current due to the quantum tunneling and by IBM [23]. Spintronics technology utilizes the spin of an thereby increases the standby power dissipation [5–7]. This electron along with its charge. Spin property is an intrinsic is a serious concern, especially in volatile memory, because form of angular momentum possessed by elementary par- we have to constantly supply power to retain the informa- ticles such as electrons, neutrons, protons, neutrinos, etc. tion stored in it. At the same time, due to a higher oper- [24]. Electron spin orientation and its associated magnetic ating frequency, the dynamic power dissipation increases. moment is employed as a state variable in spintronics, which It also scale-up heat production to its thermal limits. In has all the potential to ofer solutions to the present-day addition, when the technology scales down, the size of the problems faced by the mainstream charge based electronics global interconnects becomes longer, contributing a signif- [25–28]. Unlike in conventional CMOS technology, where cant amount of dynamic power with signal delay [8]. This the stored charge is lost due to leakage current, the spin surge in the standby and dynamic power would increase the and magnetization of an electron are retained indefnitely in operating power requirement in low power VLSI circuits. spintronic devices. This imparts non-volatility nature to the Though scaling down the power supply seems to a solution spintronic device. The main sector where spintronic devices for the increased power dissipation, but it demands strict can make an immediate and huge impact is the burgeoning power monitoring and control circuitry, which must be more big data, AI and, information and communication technol- aggressive and robust at low voltage, and they occupy a sig- ogy’s (ICT) memory domain. Figure 1 shows the present- nifcantly large silicon area. A more efcient technique to day pyramid-like memory structure. The on-chip L1 and L2 reduce standby power dissipation is power gating techniques cache consisting of static random-access memory (SRAM). [9, 10], where idle segments of main memory are partially Though SRAM is faster, it sufers from an increased standby or completely cut-of from the power rails forcing them into power dissipation problem due to leakage current caused by sleep mode. Hence zero standby power dissipation can be scaling of the MOSFETs. Whereas, L3–L4 cache consisting achieved. Prior to that, the information stored in these cir- of dynamic random-access memory (DRAM) sufers from cuits (segments of idle main memory) are transferred to non- depreciation of stored charge and requires regular refreshing volatile memory. But this technique is efective only if the circuits, which also increases the power hungriness of these circuit remains in the sleep mode for a long duration of time circuits. Spintronic based magnetic random access mem- to achieve break-even. Also, the data transfer rate between ory (MRAM) such as spin transfer torque (STT) MRAM main and nonvolatile memory is less. At the same time, and spin–orbit torque (SOT) MRAM can easily overcome catering to the needs is becoming increasingly difcult for these problems, owing to its non-volatility, fast read and artifcial intelligence (AI) and big data demands of the low write capability, ease of scalability, and high endurance. 1 3 Journal of Computational Electronics developed using LIM hold supremacy over the conventional CMOS designs due to its lower power dissipation, non-vol- atility, fast reading capability, high density, 3D fabrication adaptability, and infnite endurance [25, 37, 46–48]. On-chip In recent years due to nano-fabrication capabilities, a sub- Operates at higher speed Core Off-chip Consumes higher power branch of spintronics called straintronics being evolved and
Recommended publications
  • Emerging Spintronics Phenomena and Applications
    Emerging spintronics phenomena and applications Rahul Mishra and Hyunsoo Yang * Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics which utilizes both the charge and spin of an electron for device operations. The advantage offered by spin systems is in their non-volatility and low- power functionality. This paper reviews emerging spintronic phenomena and the research advancements in diverse spin based applications. Spin devices and systems for logic, memories, emerging computing schemes, flexible electronics and terahertz emitters are discussed in this report. *[email protected] 1 I. Introduction Conventional sensor, memory, and computing electronics exploit the charge of an electron for their operations. However, along with charge, an electron is also characterized by its spin angular momentum or spin. It is the spin of an electron that manifests in the form of magnetism that we see in magnetic objects of the macro world. In the information technology age, magnetism has found industry applications in the massive digital data storage. The field of spintronics is centered on electron’s spin in conjunction with its charge. As we near the end of a several decade scaling of CMOS technologies due to fundamental physical limitations, utilizing the degree of spin freedom might be a natural choice for next generation technologies. An external energy source is not required for maintaining a particular spin- or magnetic-state in a spintronic device.
    [Show full text]
  • Term Paper on SEMICONDUCTOR SPINTRONICS
    Term paper On SEMICONDUCTOR SPINTRONICS AMITY INSTITUTE OF NANOTECHNOLOGY AMITY UNIVERSITY, NOIDA, UTTAR PRADESH SUPERVISOR: DR.D.SAHU Assistant Professor-III Amity Institute of Nanotechnology Amity University, Noida Submitted By: R. Pragadeeshwara Rao. A1223313010 B.tech+M.tech:5 (Nanotechnology) Amity Institute of Nanotechnology DECLARATION I, R. Pragadeeshwara Rao., student of B.Tech + M.Tech : 5 (Nanotechnology) hereby declare that the project titled “Semiconductor Spintronics” which is submitted by me to Department of Amity Institute of Nanotechnology, Amity University Uttar Pradesh, Noida, in partial fulfilment of requirement for the award of the degree of B.Tech+M.Tech in Nanotechnology , has not been previously formed the basis for the award of any de- gree, diploma or other similar title or recognition. The Author attests that permission has been obtained for the use of any copy righted mate- rial appearing in the Project report other than brief excerpts requiring only proper acknowl- edgement in scholarly writing and all such use is acknowledged. Signature : Place : Noida Date : Name: R.Pragadeeshwara Rao. ii CERTIFICATE On the basis of declaration submitted by R.Pragadeeshwara Rao. student of B. Tech + M.Tech: 5 (Nanotechnology), I hereby certify that the project titled “Semiconductor Spintronics” which is submitted to Amity Institute of Nanotechnology, Amity University Noida, Uttar Pradesh, in partial fulfilment of the requirement for the award of the degree of B.Tech + M.Tech in Nanotechnology, is an original contribution with existing knowledge and faithful record of work carried out by him under my guidance and supervision. To the best of my knowledge this work has not been submitted in part or full for any Degree or Diploma to this University or elsewhere.
    [Show full text]
  • Opportunities and Challenges for Spintronics in the Microelectronics Industry
    REVIEW ARTICLE https://doi.org/10.1038/s41928-020-0461-5 Opportunities and challenges for spintronics in the microelectronics industry B. Dieny 1 ✉ , I. L. Prejbeanu1, K. Garello 2, P. Gambardella 3, P. Freitas4,5, R. Lehndorff6, W. Raberg7, U. Ebels1, S. O. Demokritov8, J. Akerman9,10, A. Deac11, P. Pirro 12, C. Adelmann 2, A. Anane13, A. V. Chumak 12,14, A. Hirohata 15, S. Mangin 16, Sergio O. Valenzuela17,18, M. Cengiz Onbaşlı 19, M. d’Aquino 20, G. Prenat1, G. Finocchio 21, L. Lopez-Diaz22, R. Chantrell 23, O. Chubykalo-Fesenko 24 and P. Bortolotti13 ✉ Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry. We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices. We also discuss the challenges—at both the device and the system level—that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms. onventional electronic devices are based on nonmagnetic spin-transfer torque14,15 (STT) and spin–orbit torque (SOT)16, of semiconductors and use the controlled flow of electric giant tunnelling magnetoresistance (TMR)17,18 in MgO-based MTJs charges to achieve information processing and communi- and of large interfacial magnetic anisotropy at magnetic metal/ C 19 cation.
    [Show full text]
  • Roadmap for Emerging Materials for Spintronic Device Applications
    1 Roadmap for Emerging Materials for Spintronic Device Applications Atsufumi Hirohata,1 Senior Member, IEEE, Hiroaki Sukegawa,2 Hideto Yanagihara,3 Igor Žutić,4 Takeshi Seki,5 Shigemi Mizukami 6 and Raja Swaminathan 7 1 Department of Electronics, University of York, York YO10 5DD, UK 2 Magnetic Materials Unit, National Institute for Materials Science, Tsukuba 305-0047, Japan 3 Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577, Japan 4 Department of Physics, University at Buffalo, State University of New York, Buffalo, NY 14260, USA 5 Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan 6 WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan 7 Intel Corporation, Chandler, AZ 85226, USA The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain- wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet.
    [Show full text]
  • Spintronics As a Non-Volatile Complement to Modern Microelectronics
    Review scientific paper Journal of Microelectronics, Electronic Components and Materials Vol. 47, No. 4(2017), 195 – 210 Spintronics as a Non-Volatile Complement to Modern Microelectronics Viktor Sverdlov1, Josef Weinbub2, and Siegfried Selberherr1 1Institute for Microelectronics, TU Wien, Wien, Austria 2Christian Doppler Laboratory for High Performance TCAD, Institute for Microelectronics, TU Wien, Wien, Austria Abstract: Continuous miniaturization of semiconductor devices has been the main driver behind the outstanding increase of speed and performance of integrated circuits. In addition to a harmful active power penalty, small device dimensions result in rapidly rising leakages and fast growing stand-by power. The critical high power consumption becomes incompatible with the global demands to sustain and accelerate the vital industrial growth, and an introduction of new solutions for energy efficient computations becomes paramount. A highly attractive option to reduce power consumption is to introduce non-volatility in integrated circuits. Preserving the data with- out power eliminates the need for refreshment cycles and related leakages as well as the necessity to initialize the data in temporarily unused parts of the circuit. Spin transistors are promising devices, with the charge-based functionality complemented by the electron spin. The non-volatility is introduced by making the source and drain ferromagnetic. Recent advances in resolving several fundamental problems including spin injection from a metal ferromagnet to a semiconductor, spin propagation and relaxation, as well as spin ma- nipulation by the electric field, resulted in successful demonstrations of such devices. However, the small relative current ratio between parallel/anti-parallel source and drain alignment at room temperature remains a substantial challenge preventing these devices from entering the market in the near future.
    [Show full text]
  • Utilization of Spintronics
    International Journal of Scientific and Research Publications, Volume 3, Issue 6, June 2013 1 ISSN 2250-3153 Utilization of Spintronics Jitendra S. Pingale1, Mukesh D. Patil2, Umar I. Masumdar3 1M.E.Electronics, RamraoAdik Institute of Technology, Navi Mumbai, India [email protected] 2Ph.D. IIT Mumbai Ramrao Adik Institute of Technology, Navi Mumbai, India [email protected] 3M.E.Electronics and Telecommunication, Terna Engineering college, Navi Mumbai, India. [email protected] Abstract-Spintronics refers commonly to phenomena in which phenomena in solids, in particular metals and semiconductors the spin of electrons in a solid state environment plays the and semiconductor hetero-structures. Such studies characterize determining role.In a narrow sense Spintronics refers to spin electrical, optical, and magnetic properties of solids due to the based electronicsi.e. spin-polarized transport in metals and presence of equilibrium and non-equilibrium spin populations, as semiconductors. The goal of this applied Spintronics is to find well as spin dynamics.An example is a spin field-effect effective ways of controlling electronic properties, such as the transistor, which would change its logic state from ON to OFF by current or accumulated charge, by spin or magnetic field, as well flipping the orientation of a magnetic field [1]. as of controlling spin or magnetic properties by electric currents or gate voltages. The ultimate goal is to make practical device II. SILSBEE-JOHNSON SPIN-CHARGE COUPLING FOR schemes that would enhance functionalities of the current charge SPIN DETECTION based electronics.Spintronics devices are based on a spin control In electrical spin injection we drive spin-polarized electronsfrom of electronics, or on an electrical and optical control of spin or a ferromagnet into a nonmagnetic conductor.
    [Show full text]
  • SPINTRONICS the Future Technology
    SPINTRONICS The Future Technology Presented by T.Bhargava K. Sudheer III B.Tech DEPT. OF ELECTRONICS ENGG. PRAGATI COLLEGE OF ENGG. KAKINADA E-MAIL [email protected] [email protected] ABSTRACT: “Spintronics” uses the spin of electrons instead or in addition to the charge of an electron. Electron spin has two states either “up” or “down”. Aligning spins in material creates magnetism. Moreover, magnetic field affects the passage of spin-up and spin-down electrons differently. The paper starts with the detail description of the fundamentals and properties of the spin of the electrons. It is followed by an account of new Spin Field Effect Transistors and then it proceeds with a note on magneto resistance, the development of Giant magneto resistance (GMR) and devices like Magneto Random Access Memory, which are the new version of the traditional RAMs. It describe how this new version of RAMs which can revolutionize the memory industry. And the next versions of Race Track Memory were explained in a detailed manner. It also specifies the differences between electronic devices and spintronic devices. It also gives the hurdles due to the presence of holes. This paper also discusses about a Quantum computer, which uses qubits rather than normal binary digits for computations. Finally it ends with a note on why we should switch on this technology. SPINTRONICS: Spintronics, or spin electronics, refers to the study of the role played by electron (and more generally nuclear) spin in solid state physics, and possible devices that specifically exploit spin properties instead of or in addition to charge degrees of freedom.
    [Show full text]