IEEE DAVID SARNOFF AWARD RECIPIENTS

2017 – NOT AWARDED

2016 – HIROYUKI MATSUNAMI “For contributions to the development of Professor Emeritus, Kyoto silicon carbide (SiC) crystals and devices University, Yawata, Kyoto, Japan for advanced power electronics.”

2015 - PALLAB BHATTACHARYA “For contributions to near-infrared and Charles M. Vest Distinguished visible quantum dot lasers.” University Professor and James R. Mellor Professor of Engineering, University of Michigan, Ann Arbor, Michigan, USA

2014 - LARRY A. COLDREN “For contributions to semiconductor lasers an Fred Kavli Professor of photonic integrated circuits.” Optoelectronics and Sensors, University of California at Santa Barbara, Santa Barbara, California, USA

2013 - SAJEEV JOHN “For the conception and development of University Professor, Department of light-trapping crystals and for leadership in Physics, University of Toronto, elucidating their properties and applications i Toronto, Ontario, Canada photonics.”

2012 - HIDEO OHNO “For seminal contributions and leadership in Professor at Laboratory for bridging semiconductor electronics with Nanoelectronics and Spintronics, magnetism and spintronics.” Research Institute of Electrical Communication and Director of Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan

2011 – CONSTANCE J. CHANG-HASNAIN “For her pioneering contributions to vertical John R. Whinnery Chair Professor of cavity surface emitting laser (VCSEL) arrays Electrical Eng. and Computer and tunable VCSELs.” Science University of California Berkeley, CA, USA

2010 – MARK RODWELL “For development of millimeter-wave and Professor, Dept of Elec and Comp sub-millimeter-wave InP bipolar transistors Engrg, Univ of California, Santa and integrated circuits.” Barbara Santa Barbara, CA, USA

2009 – YASUHIKO ARAKAWA “For seminal contributions to improved Professor, Research Center for dynamics of quantum well semiconductor 1 of 7 IEEE DAVID SARNOFF AWARD RECIPIENTS

Advanced Science and Technology, lasers.” Tokyo, Japan AND KAM-YIN LAU Professor, EECS, Univ of California, Berkeley, CA, USA AND KERRY J. VAHALA Jenkins Professor, Applied Physics, California Institute of Technology, Pasadena, CA, USA

2008 - JAMES COLEMAN “For leadership in the development of University of Illinois at Urbana- highly reliable strained-layer lasers” Champaign, Intel Alumni Endowed Chair in Electrical and Computer Engineering, Urbana, IL, USA

2007 – UMESH K. MISHRA “For development of gallium nitride ECE Department, University of electronics.” California, Santa Barbara, CA, USA

2006 - MAU-CHUNG FRANK CHANG “For development of HBT power amplifiers Professor, Electrical Engineering leading to their commercialization in Department, UCLA, wireless communications.” Los Angeles, CA, USA

2005 – PIERRE TOURNOIS “For pioneering contributions to pulse Co-Founder & Scientific Director compression devices and the invention of Fastlite Company the Acousto-Optic Programmable Palaiseau, France Dispersive Filter.”

2004 – FREDERICK A. KISH “For his key role in the development of Engineering Vice President high efficency transparent substrate light Lepton Networks emitting diodes and their commercial Cupertino, CA, USA realization.”

2003 - PETER ASBECK "For development and applications of Professor, Electrical and Computer GaAs-based heterojunction bipolar Engineering Dept, University of transistors." California, San Diego, CA, USA

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2002 – YOUNG-KAI CHEN “For contributions to ultrahigh speed Lucent Technologies heterostructure transistors and seminal Murray Hill, NJ, USA work on colliding pulse mode-locked semiconductor lasers."

2001 - PAUL D. DAPKUS “For contributions both to the University of Southern California establishment of MOCVD as a dominant Los Angeles, CA , USA technology for epitaxial materials growth and to the first MOCVD quantum well laser.”

2000 - ALASTAIR MALCOLM GLASS "For pioneering research on electro-optical Bell Laboratories/Lucent materials and photorefractive phenomena, Technologies and for leadership in development of Murray Hill, NJ, USA Wavelength Division Multiplexing (WDM) components."

1999 - GERARD A. MOUROU "For pioneering contributions to high- University of Michigan speed, high-intensity optoelectronic Ann Arbor, MI, USA measurement techniques, including electro-optic sampling and femtosecond high-voltage switching."

1998 -TATSUO IZAWA "For contributions to vapor phase axial Nippon Telegraph and Telephone deposition for optical fiber fabrication." Corp. Kanagawa, Japan

1997 - MILTON FENG "For contributions to the theoretical and University of Illinois experimental understanding of the Urbana, IL, USA fundamental speed limitations of MESFETs and HEMTs."

1996 - HIROYUKI SAKAKI "For pioneering studies of quantum effects University of Tokyo in semiconductor microstructures." Tokyo, Japan

1995 - KARL HESS "For contributions to high field transport Beckman Inst. - Univ. of Illinois and real space transfer effects in Urbana, IL, USA semiconductor heterolayer structures."

1994 - WON-TIEN TSANG "For innovative contributions to the design AT&T Bell Laboratories of novel quantum well semiconductor Murray Hill, NJ, USA lasers and to epitaxial growth processes."

1993 - RAO R. TUMMALA "For development of high density, high IBM Corp. performance multichip packages for Hopewell Junction, NY, USA computer applications."

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1992 - J. JIM HSIEH "For the invention and commercialization of Lasertron Inc. the GaInAsP semiconductor laser for Burlington, MA, USA fiber-optic communications."

1991 - FEDERICO CAPASSO "For pioneering contributions to AT&T Bell Laboratories heterostructure devices through the use of Murray Hill, NJ, USA bandgap engineering techniques."

1990 - LEROY L. CHANG "For pioneering contributions to the IBM Corp. realization and development of quantum Yorktown Heights, NY, USA wells and superlattices."

1989 - HERWIG KOGELNIK "For invention of the distributed feedback AND laser, and contributions to integrated CHARLES V. SHANK optics and fiber communications." AT&T Bell Laboratories, Holmdel, NJ, USA

1988 - IZUO HAYASHI "For contributions to III-V semiconductors Optoelectronics Joint Res. Lab. and device technology." Kawasaki, Japan

1987 - FRANK F. FANG "For contributions to MOSFET device AND physics and two-dimensional electron ALAN B. FOWLER systems." IBM Corp., Yorktown Heights, NY, USA

1986 - YASUHARU SUEMATSU "For contributions to semiconductor lasers Tokyo Inst. of Tech. and integrated optics for optical fiber Tokyo, Japan communications."

1985 - HENRY KRESSEL "For outstanding contributions to E.M. Warburg, Pincus & Co. electro-optic semiconductor devices." New York, NY, USA

1984 - JAMESON D. RIGDEN "For invention of the visible light Delta Development Ltd. helium-neon laser." Norfolk, England AND ALAN D. WHITE White Associates Berkely Heights, NJ, USA

1983 - HERMANN K. GUMMEL "For contributions and leadership in device AT&T Bell Laboratories analysis and development of Murray Hill, NJ, USA computer-aided design tools for semiconductor devices and circuits."

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1982 - NOBUTOSHI KIHARA "For major contributions to magnetic video SONY Corp. tape recording." Tokyo, Japan

1981 - CYRIL HILSUM "For contributions in the fields of III-V Royal Signals & Radar Establ. compound semiconductors, solid state Malvern, England microwave components and display devices."

1980 - MARSHALL I. NATHAN "For his role in the discovery of the IBM Corp. injection laser, and other contributions to Yorktown Heights, NY, USA the physics of semiconductor devices."

1979 - A. GARDNER FOX "For the discovery of modes in open AND structures and their applications to laser TINGYE LI resonators." Bell Labs., Holmdel, NJ, USA

1978 - STEPHEN E. HARRIS "For scientific discoveries and device Stanford University inventions in the fields of lasers, quantum Stanford, CA, USA electronics and non-linear optics."

1977 - JACK M. MANLEY "For their work on the properties of University of Wisconsin, nonlinear devices resulting in the Madison, WI, USA well-known Manley Rowe Relations." AND HARRISON E. ROWE Bell Laboratories, Holmdel, NJ, USA

1976 - GEORGE HARRY HEILMEIER "For combining science with engineering to Defense Adv. Res. Project Agy. create the dynamic scattering liquid crystal Arlington, VA, USA display."

1975 - BERNARD C. DELOACH, JR. "For contributions to and leadership in the Bell Telephone Laboratories development of the impact avalanche and New Providence, NJ, USA transit time (IMPATT) device."

1974 - FREDERIK L. J. SANGSTER "For the invention of the integrated Phillips Research Laboratories bucket-brigade delay line and ingenuity in Eindhoven, the Netherlands finding new realizations and applications of this principle."

1973 - MAX VERNON MATHEWS "For leadership in applying electronics to Bell Telephone Laboratories art and for his contribution to the Murray Hill, NJ, USA production of musical sounds by computer."

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1972 - EDWARD G. RAMBERG "For outstanding contributions to electron RCA Laboratories physics, electron optics and ." Princeton, NJ, USA

1971 - ALAN L. MCWHORTER "For outstanding contributions leading to a Massachusetts Institute of better understanding of semiconductor Technology, devices." Cambridge, MA, USA

1970 - JOHN BERTRAND JOHNSON "For fundamental contributions of major McGraw-Edison Company importance to electronics and West Orange, NJ, USA communications."

1969 - ROBERT H. REDIKER "For contributions to semiconductor device Massachusetts Institute of research and injection lasers." Technology, Cambridge, MA, USA

1968 - WALTER P. DYKE "For pioneering contributions to the Field Emission Corporation development of field emission in X-ray McMinnville, OR, USA technology."

1967 - JAMES HILLIER "For his pioneering research on the RCA Laboratories electron microscope, including both Princeton, NJ, USA electron optics and biological microscopy, and for his accomplishments as a research director and his inspiration to scientists - young and old."

1966 - JACK S. KILBY "For his outstanding creative contribution Texas Instruments Inc. in the field of monolithic integrated circuits, Dallas, TX, USA for his key inventions and for his team leadership in the application of integrated circuits to large scale systems."

1965 - JACK A. MORTON "For his outstanding leadership and Bell Telephone Laboratories contributions to the development and Murray Hill, NJ, USA understanding of solid-state electron devices."

1964 - HENRI BUSIGNIES "For outstanding contributions to electronic International Telephone & Telegraph systems especially in the fields of direction New York, NY, USA finding and air navigation."

1963 - ROBERT N. HALL "For his outstanding contributions to the Company scientific understanding of semiconductors Schenectady, NY, USA and for their applications to electronics."

1962 - HARRY B. SMITH "For his contributions to the field of 6 of 7 IEEE DAVID SARNOFF AWARD RECIPIENTS

Westinghouse Electric Corporation Doppler radar and other areas of applied Baltimore, MD, USA electronics."

1961 - CHARLES H. TOWNES "For research in resonance physics leading to major advances in communication technology."

1960 - RUDOLF KOMPFNER "For creative achievements in research and Bell Telephone Laboratories development in the field of electronics and Holmdel, NJ, USA for his leadership in this field."

1959 - DAVID SARNOFF "This special inaugural award of the David Radio Corporation of America Sarnoff Medal is made to David Sarnoff New York, NY, USA October 7, 1959, on the 75th Anniversary of the first technical meeting of AIEE, in recognition of his inspiring and courageous leadership in the advancement of the art and science of electronics."

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