Plasma-Based Nanostructuring of Polymers: a Review
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Fabrication of Sharp Silicon Hollow Microneedles by Deep-Reactive Ion
Li et al. Microsystems & Nanoengineering (2019) 5:41 Microsystems & Nanoengineering https://doi.org/10.1038/s41378-019-0077-y www.nature.com/micronano ARTICLE Open Access Fabrication of sharp silicon hollow microneedles by deep-reactive ion etching towards minimally invasive diagnostics Yan Li1,2,HangZhang1, Ruifeng Yang1, Yohan Laffitte2, Ulises Schmill2,WenhanHu1, Moufeed Kaddoura2, Eric J. M. Blondeel2 and Bo Cui1 Abstract Microneedle technologies have the potential for expanding the capabilities of wearable health monitoring from physiology to biochemistry. This paper presents the fabrication of silicon hollow microneedles by a deep-reactive ion etching (DRIE) process, with the aim of exploring the feasibility of microneedle-based in-vivo monitoring of biomarkers in skin fluid. Such devices shall have the ability to allow the sensing elements to be integrated either within the needle borehole or on the backside of the device, relying on capillary filling of the borehole with dermal interstitial fluid (ISF) for transporting clinically relevant biomarkers to the sensor sites. The modified DRIE process was utilized for the anisotropic etching of circular holes with diameters as small as 30 μm to a depth of >300 μm by enhancing ion bombardment to efficiently remove the fluorocarbon passivation polymer. Afterward, isotropic wet and/or dry etching was utilized to sharpen the needle due to faster etching at the pillar top, achieving tip radii as small as 5 μm. Such sharp microneedles have been demonstrated to be sufficiently robust to penetrate porcine skin without needing any aids such as an impact-insertion applicator, with the needles remaining mechanically intact after repetitive fi 1234567890():,; 1234567890():,; 1234567890():,; 1234567890():,; penetrations. -
Plasma Polymerization of 3-Aminopropyl-Trimethoxysilane Inside Closed Plastic Bags at Atmospheric Pressure K
Plasma polymerization of 3-aminopropyl-trimethoxysilane inside closed plastic bags at atmospheric pressure K. Lachmann, A. Dohse, M. Thomas, C.-P. Klages Fraunhofer-Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54 E, 38108 Braunschweig, Germany, Phone: +49 531-2155 683, Fax: +49 531-2155 900, [email protected] Abstract: Surface modification of the inner surfaces of closed plastic bags enables cultivation of stem cells under GMP (Good Manufacturing Practice) conditions. The surface coating is performed in an atmospheric PECVD process based on dielectric barrier discharges using specially designed automated equipment. In former investigations coatings made from 3-aminopropyl- trimethoxysilane (APTMS) were found to be particularly suitable for adherent cell cultivation. This contribution presents investigations of the coating process within the bag with a focus on film composition and stability of the deposited film. Effects of treatment parameters, diffusion processes through the permeable polymer bag and the influence of the relative humidity were studied. Keywords: plasma polymerization, DBD, cell culture, plastic bag 1. Introduction 2. Experimental Plasma treatment to enhance cell cultivation is well Plasma treatment was performed in an automated described in the literature [1-2]. Usually two system designed and built at Fraunhofer IST (see dimensional substrates, like polymer foils or glass Figure 1). The process is based on a DBD slides were coated. As the cultivation of arrangement where the plastic bag is pressed mesenchymal stem cells is challenging, the use of between two parallel electrodes, a high voltage open systems may be involved with high risk of electrode (150 x 300 mm2) covered with a 3.4 mm contamination. -
Introduction to Plasma Etching
Introduction to Plasma Etching Dr. Steve Sirard Technical Director Lam Research Corporation Lam Research Corp. 1 Day 1 Review – Plasma Fundamentals ► Plasmas consists of electrons, ions, neutrals, radiation ▪ ne ~ ni << ng (weakly ionized) Collisional Processes - -Ionization + e -Dissociation ► Collisional -Excitation processes sustain - the plasma and e h create radicals (etchant) + * + e- * ▪ Electrons are very hot e- + + ► Sheaths form at the walls/substrate to confine electrons and directionally accelerate ions Lam Research Corp. 2 Day 1 Review – Anisotropic Plasma Etching + + 0.015 0.010 + IED 0.005 Ion Flux Ion 1000V) 0.000 0 20 40 60 80 100 – Ion Energy (eV) Ion Energy (eV) V ~ 10 + + SiO2(s) + CxFy + I (Ei) SiF4(g) + CO(g) Vertical, anisotropic etch Sheath ( Sheath Electrode Synergy! Lam Research Corp. 3 Day 2 - Outline ► Primary etching variables available to process engineers ► Common pattern transfer issues ► Advanced etch strategies: Pulsing strategies, Atomic layer etching ► Within-wafer etch uniformity control ► Plasma & surface diagnostics Lam Research Corp. 4 What “knobs” are available to tune etch processes? ► Etching in general is very complex! ► Advanced plasma etch chambers are equipped with a lot of “knobs” for controlling the etch process ▪ Wafer temperature ▪ Upper electrode temperature ▪ Temperature gradients ▪ Chamber pressure ▪ Gas chemistry (~20 gases on a chamber to choose from) ▪ Gas ratios (gas partial pressures) ▪ Gas flow rate (residence time) ▪ Total RF power ▪ Multiple RF excitation frequencies (up to 3 generators) ▪ Pulsing of RF powers (duty cycle, frequency) ▪ Pulsing of gases (duty cycle, frequency) ▪ Etch time ▪ Multiple uniformity knobs ► Overall, a tremendously large process space long development cycles! Lam Research Corp. -
Fabrication of Semiconductors by Wet Chemical Etch
THE JOURNAL OF UNDERGRADUATE RESEARCH University of Kansas | Summer 2008 Fabrication of Semiconductors by Wet Chemical Etch Selective Etching of GaAs Over InGaP in Dilute H2SO4:H2O2 Fabrication engineering of semi- terial. !e plasma etch process is car- conductor devices has made possi- ried out in a chamber in which a gas ble optoelectronic instruments, laser mixture is partially ionized to create diodes and wireless communica- a plasma, or glow discharge. High en- tion devices among many other mod- ergy ions in the plasma bombard the ern devices. Beginning with Bardeen, semiconductor material and chemi- Brittain and Shockley’s invention of cally reactive components in the gas the transistor in Bell Labs in 1947 and mixture form etch products with the Kilby and Noyce’s introduction of the semiconductor. !e process produces integrated circuit about a decade later, accurately etched features and is one semiconductor devices have dramat- of the primary reasons for the reduc- ically advanced the computing and tion in device size that has made tech- electronics industries. nology such as cell phones and laptop Semiconducting materials, such computers possible. as silicon, germanium, gallium ar- senide, and indium phosphide, are INTRODUCTION neither good insulators nor good con- Semiconductors such as InGaP ductors, but they have intrinsic electri- and InGaAsSb are important for light- cal properties so that by controlled ad- emitting devices as well as communi- dition of impurities, their conductivity cations devices and electronics. Fab- can be altered. With the need to manu- rication of these devices is achieved facture devices at the micro- and nano- by plasma etching in which an ion- scale, the semiconductor industry has ized gas mixture etches the substrate followed “Moore’s Law,” the trend that by both chemical reaction and phys- the number of transistors placed on ical bombardment. -
Perspective on Plasma Polymers for Applied Biomaterials Nanoengineering and the Recent Rise of Oxazolines
materials Review Perspective on Plasma Polymers for Applied Biomaterials Nanoengineering and the Recent Rise of Oxazolines Melanie Macgregor 1,2 and Krasimir Vasilev 1,2,* 1 School of Engineering, University of South Australia, Adelaide, SA 5000, Australia; [email protected] 2 Future Industries Institute, University of South Australia, Adelaide, SA 5000, Australia * Correspondence: [email protected]; Tel.: +61-8-8302-5697 Received: 3 December 2018; Accepted: 2 January 2019; Published: 8 January 2019 Abstract: Plasma polymers are unconventional organic thin films which only partially share the properties traditionally attributed to polymeric materials. For instance, they do not consist of repeating monomer units but rather present a highly crosslinked structure resembling the chemistry of the precursor used for deposition. Due to the complex nature of the deposition process, plasma polymers have historically been produced with little control over the chemistry of the plasma phase which is still poorly understood. Yet, plasma polymer research is thriving, in par with the commercialisation of innumerable products using this technology, in fields ranging from biomedical to green energy industries. Here, we briefly summarise the principles at the basis of plasma deposition and highlight recent progress made in understanding the unique chemistry and reactivity of these films. We then demonstrate how carefully designed plasma polymer films can serve the purpose of fundamental research and biomedical applications. We finish the review with a focus on a relatively new class of plasma polymers which are derived from oxazoline-based precursors. This type of coating has attracted significant attention recently due to its unique properties. -
Chemistry and Physics of Plasma Polymerization Probed by Mass Spectrometry
Institutional Repository - Research Portal Dépôt Institutionnel - Portail de la Recherche University of Namurresearchportal.unamur.be THESIS / THÈSE DOCTOR OF SCIENCES Chemistry and physics of plasma polymerization probed by mass spectrometry Author(s) - Auteur(s) : Gillon, Xavier Award date: 2014 Awarding institution: University of Namur Supervisor - Co-Supervisor / Promoteur - Co-Promoteur : Link to publication Publication date - Date de publication : Permanent link - Permalien : Rights / License - Licence de droit d’auteur : General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. BibliothèqueDownload date: Universitaire 11. oct.. 2021 Moretus Plantin Cover design: © University Presses of Namur © Presses universitaires de Namur & X. Gillon Rempart de la Vierge, 13 B - 5000 Namur (Belgium) Any reproduction of an excerpt any of this book, out of the restrictive limits laid down by law, by any process whatsoever, and in particular by photocopying or scanning, is strictly prohibited for all countries. -
Application of Plasma Cleaning Technology in Microscopy”
A White Paper from XEI “Application of Plasma Cleaning Technology in Microscopy” Tom Levesque, Technology Business Consulting & Jezz Leckenby, Talking Science XEI Scientific, Inc. 1755 East Bayshore Rd, Suite 17, Redwood City, CA 94063 Phone +1 (650) 369-0133, +1 (800) 500-0133 · FAX +1 (650) 363-1659 General technical information: [email protected] · Sales and quotations: [email protected] Introduction The cleanliness of specimen surfaces and the high vacuum electron microscope environments in which these surfaces are studied or processed have never been more critical than they are today with examination and fabrication nearing the atomic level. Routine manufacturing at the scale required for nanotechnology demands pristine and controlled surfaces in order to create the desired structures. Modern electron and ion microscopes are equipped with sophisticated vacuum systems and can provide these conditions, but maintaining cleanliness over time may be more difficult. One of the ways that scientists have been able to achieve these remarkably unadulterated surfaces has been to subject their samples and microscopes to cleaning by various plasma technologies. Often contamination is derived from hydrocarbon molecules which even in minute quantities can interact with the electron or ion beam, creating unwanted artifacts in images or data. While contamination is often considered in terms of examination of non-biological samples, it is useful to point out that exposure of biological and polymeric samples to ion and electron beams can create extensive carbon contamination and the tools used for this work are often in dire need of methods to clean them as well. Carbon Contamination The problem of hydrocarbon contamination inside the electron microscope is well documented and has been an issue from the earliest days of electron microscopy. -
Plasma Treatment of Glass Surfaces Using Diffuse Coplanar Surface Barrier Discharge in Ambient Air
Plasma Chem Plasma Process (2013) 33:881–894 DOI 10.1007/s11090-013-9467-3 ORIGINAL PAPER Plasma Treatment of Glass Surfaces Using Diffuse Coplanar Surface Barrier Discharge in Ambient Air Toma´sˇ Homola • Jindrˇich Matousˇek • Martin Kormunda • Linda Y. L. Wu • Mirko Cˇ erna´k Received: 31 January 2013 / Accepted: 22 June 2013 / Published online: 11 July 2013 Ó Springer Science+Business Media New York 2013 Abstract We report a study on the treatment of flat glass surfaces by ambient air atmospheric pressure plasma, generated by a dielectric barrier discharge of coplanar arrangement of the electrode system—the diffuse coplanar surface barrier discharge (DCSBD). The plasma treatment of glass was performed in both static and dynamic modes. With respect to wettability of the glass surface, treatment in static mode resulted in non- uniform surface properties, whereas dynamic mode provided a fully uniform treatment. A water contact angle measurement was used to determine the efficiency of plasma treat- ments in dynamic mode and also to investigate a hydrophobic recovery of plasma treated glass surfaces. The X-ray photoelectron spectroscopy measurements showed a decrease of overall carbon concentrations after plasma treatment. A deconvolution of C1s peak, showed that a short plasma treatment led to decrease of C–C bonds concentration and increases of C–O and O–C=O bond concentrations. An enhancing influence of the glass surface itself on DCSBD diffuse plasma was observed and explained by different discharge onsets and changes in the electric field distribution. Keywords Atmospheric pressure air plasma Á DCSBD Á Diffuse plasma Á Glass surface Á XPS T. -
Selective Plasma Etching of Polymeric Substrates for Advanced Applications
nanomaterials Review Selective Plasma Etching of Polymeric Substrates for Advanced Applications Harinarayanan Puliyalil 1,2,† and Uroš Cvelbar 1,2,*,† 1 Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia; [email protected] 2 Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia * Correspondence: [email protected]; Tel.: +386-14773536 † These authors contributed equally to this work. Academic Editors: Krasimir Vasilev and Melanie Ramiasa Received: 2 February 2016; Accepted: 30 May 2016; Published: 7 June 2016 Abstract: In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance. Keywords: plasma etching; selectivity; surface chemistry; nanomesh; nanostructuring; polymer composite; biomaterials; adhesion; etch mask; radical atoms 1. Introduction Plasma technology is one of the fastest developing branches of science, which is replacing numerous conventional wet-chemical methods in high-tech laboratories and industries, with a huge impact in renewable energy, environmental protection, biomedical applications, nanotechnology, microelectronics, and other fields. -
Effect of Plasma Cleaning on Carbon Support Films for Field Emission Gun
Model 1020 Plasma Cleaner and Model 1070 NanoClean Effect of plasma cleaning on carbon support films for field emission gun transmission electron microscopy Analysis of specimens in a high-performance An oxygen-rich plasma will remove carbon field emission gun transmission electron from the film as the specimen is cleaned. If the microscopy (FEG TEM) requires removal of film is degraded excessively, the specimen may carbonaceous contamination in an instrument be lost. such as the Model 1020 Plasma Cleaner or the The standard operating parameters of both Model 1070 NanoClean. Fischione plasma cleaners can be modified NOTE to accommodate carbon support films. After To plasma clean cross section (XTEM) substituting 2% for the standard 25% oxygen specimens prepared with a focused ion beam (balance is argon), the gas pressure, gas flow, (FIB), it may be necessary to first place them on and RF power settings were optimized. The a support film such as carbon. This film is, in result was that the time for effective cleaning turn, supported by a standard metal grid often without film degradation was increased from formed from copper, nickel, or molybdenum. 20 seconds in 25% O2 to 2 minutes in 2% O2. PLASMA CLEANING CARBON SUPPORT FILMS A standard (~50 nm thick) carbon film supported by a 400-mesh copper grid is depicted after 2 minutes of plasma cleaning. TEM examination revealed no significant thinning of the film until it was plasma cleaned for times approaching 3 minutes. E.A. Fischione Instruments, Inc. 9003 Corporate Circle Export, PA 15632 USA Tel: +1 724.325.5444 Fax: +1 724.325.5443 [email protected] ©2014 E.A. -
Electron Beam Lithography and Plasma Etching to Fabricate Supports for Studying Nanomaterials
DOI: 10.24178/ijrs.2017.3.2.18 IJRS Vol 3(2) Jun 2017 Electron Beam Lithography and Plasma Etching To Fabricate Supports for Studying Nanomaterials Mona Alyobi1,2 & Richard Cobley1 1College of Engineering, Swansea University, Swansea, UK 2College of science, Taibah University, Medina, Kingdom of Saudi Arabia [email protected] Abstract—The fabrication processes of different nano- structures II. EXPERIMENT by electron beam lithography (EBL) and plasma dry etching are The electron beam writing was performed with a shown. The periodic circle and square patterns with different RaitheLiNE lithography system. First, the design of the square sizes were defined in the resist by EBL and then formed in the and circle arrays of different sizes (from 1um to 5um) was substrates by plasma etching. The holes were created with a created using Raith software. A substrate of a <100> oriented, diameter ranging from 1um to 5um and an etch depth from around 500nm to 1um. The quality and the size of fabricated p-type silicon wafer was cleaned in an ultrasound bath of patterns and their dependence on the etching time were acetone and isopropanol, washed with DI water, and dried with investigated using top-down and cross-sectional scanning a nitrogen gun. A layer of PMMA resist (1 PMMA: 1 electron microscopy (SEM). It was found that the structures are chlorobenzene) was spin coated on top of a Si wafer and then well-resolved in the patterns with high levels of quality and good baked on a hotplate at 180°C for three minutes. The baking is size uniformity. -
Characterization of Sio2 Etching Profiles in Pulse-Modulated
materials Article Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas Chulhee Cho 1, Kwangho You 1, Sijun Kim 2, Youngseok Lee 1, Jangjae Lee 1 and Shinjae You 1,3,* 1 Department of Physics, Chungnam National University, 99 Daehak-ro, Daejeon 34134, Korea; [email protected] (C.C.); [email protected] (K.Y.); [email protected] (Y.L.); [email protected] (J.L.) 2 Nanotech, Yongin 28431, Korea; [email protected] 3 Institute of Quantum System (IQS), Chungnam National University, Daejeon 34134, Korea * Correspondence: [email protected] Abstract: Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of under- standing in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic Citation: Cho, C.; You, K.; Kim, S.; processing databases including plasma diagnosis for advanced plasma processing simulators. Lee, Y.; Lee, J.; You, S.