Protocols for the High Temperature Measurement of the Seebeck Coefficient in Thermoelectric Materials
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The Spin Nernst Effect in Tungsten
The spin Nernst effect in Tungsten Peng Sheng1, Yuya Sakuraba1, Yong-Chang Lau1,2, Saburo Takahashi3, Seiji Mitani1 and Masamitsu Hayashi1,2* 1National Institute for Materials Science, Tsukuba 305-0047, Japan 2Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan 3Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan The spin Hall effect allows generation of spin current when charge current is passed along materials with large spin orbit coupling. It has been recently predicted that heat current in a non-magnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. Here we report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find changes in the longitudinal and transverse voltages with magnetic field when temperature gradient is applied across the film. The field-dependence of the voltage resembles that of the spin Hall magnetoresistance. A comparison of the temperature gradient induced voltage and the spin Hall magnetoresistance allows direct estimation of the spin Nernst angle. We find the spin Nernst angle of W to be similar in magnitude but opposite in sign with its spin Hall angle. Interestingly, under an open circuit condition, such sign difference results in spin current generation larger than otherwise. These results highlight the distinct characteristics of the spin Nernst and spin Hall effects, providing pathways to explore materials with unique band structures that may generate large spin current with high efficiency. *Email: [email protected] 1 INTRODUCTION The giant spin Hall effect(1) (SHE) in heavy metals (HM) with large spin orbit coupling has attracted great interest owing to its potential use as a spin current source to manipulate magnetization of magnetic layers(2-4). -
Seebeck Coefficient in Organic Semiconductors
Seebeck coefficient in organic semiconductors A dissertation submitted for the degree of Doctor of Philosophy Deepak Venkateshvaran Fitzwilliam College & Optoelectronics Group, Cavendish Laboratory University of Cambridge February 2014 \The end of education is good character" SRI SATHYA SAI BABA To my parents, Bhanu and Venkatesh, for being there...always Acknowledgements I remain ever grateful to Prof. Henning Sirringhaus for having accepted me into his research group at the Cavendish Laboratory. Henning is an intelligent and composed individual who left me feeling positively enriched after each and every discussion. I received much encouragement and was given complete freedom. I honestly cannot envision a better intellectually stimulating atmosphere compared to the one he created for me. During the last three years, Henning has played a pivotal role in my growth, both personally and professionally and if I ever succeed at being an academic in future, I know just the sort of individual I would like to develop into. Few are aware that I came to Cambridge after having had a rather intense and difficult experience in Germany as a researcher. In my first meeting with Henning, I took off on an unsolicited monologue about why I was so unhappy with my time in Germany. To this he said, \Deepak, now that you are here with us, we will try our best to make the situation better for you". Henning lived up to this word in every possible way. Three years later, I feel reinvented. I feel a constant sense of happiness and contentment in my life together with a renewed sense of confidence in the pursuit of academia. -
Practical Temperature Measurements
Reference Temperatures We cannot build a temperature divider as we can a Metal A voltage divider, nor can we add temperatures as we + would add lengths to measure distance. We must rely eAB upon temperatures established by physical phenomena – which are easily observed and consistent in nature. The Metal B International Practical Temperature Scale (IPTS) is based on such phenomena. Revised in 1968, it eAB = SEEBECK VOLTAGE establishes eleven reference temperatures. Figure 3 eAB = Seebeck Voltage Since we have only these fixed temperatures to use All dissimilar metalFigures exhibit t3his effect. The most as a reference, we must use instruments to interpolate common combinations of two metals are listed in between them. But accurately interpolating between Appendix B of this application note, along with their these temperatures can require some fairly exotic important characteristics. For small changes in transducers, many of which are too complicated or temperature the Seebeck voltage is linearly proportional expensive to use in a practical situation. We shall limit to temperature: our discussion to the four most common temperature transducers: thermocouples, resistance-temperature ∆eAB = α∆T detector’s (RTD’s), thermistors, and integrated Where α, the Seebeck coefficient, is the constant of circuit sensors. proportionality. Measuring Thermocouple Voltage - We can’t measure the Seebeck voltage directly because we must IPTS-68 REFERENCE TEMPERATURES first connect a voltmeter to the thermocouple, and the 0 EQUILIBRIUM POINT K C voltmeter leads themselves create a new Triple Point of Hydrogen 13.81 -259.34 thermoelectric circuit. Liquid/Vapor Phase of Hydrogen 17.042 -256.108 at 25/76 Std. -
Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique Zhenyu Pan1, Zheng
Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique Zhenyu Pan1, Zheng Zhu1, Jonathon Wilcox2, Jeffrey J. Urban3, Fan Yang4, and Heng Wang1 1. Department of Mechanical, Materials, and Aerospace Engineering, Illinois Institute of Technology, Chicago, IL 60616, USA 2. Department of Chemical Engineering, Illinois Institute of Technology, Chicago, IL 60616, USA 3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA 4. Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA Abstract: Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few MW level. Meanwhile, certain semiconductors are highly intrinsic and resistive, many examples can be found in optical and photovoltaic materials. The hybrid halide perovskites that have gained extensive attention recently are a good example. Few credible studies exist on the Seebeck coefficient of, CH3NH3PbI3, for example. We report here an AC technique based Seebeck coefficient measurement, which makes high quality voltage measurement on samples with resistances up to 100GW. This is achieved through a specifically designed setup to enhance sample isolation and reduce meter loading. As a demonstration, we performed Seebeck coefficient measurement of a CH3NH3PbI3 thin film at dark and found S = +550 µV/K. Such property of this material has not been successfully studied before. 1. Introduction When a conductor is under a temperature gradient a voltage can be measured using a different conductor as probes. The measured voltage is proportional to the temperature difference at two contacts and the slope is the Seebeck coefficient S. -
Seebeck Coefficient Measurements on Li, Sn, Ta, Mo, and W
Journal of Nuclear Materials 438 (2013) 224–227 Contents lists available at SciVerse ScienceDirect Journ al of Nuclear Materia ls journal homepage: www.elsevier.com/locate/jnucmat Seebeck coefficient measurements on Li, Sn, Ta, Mo, and W ⇑ P. Fiflis , L. Kirsch, D. Andruczyk, D. Curreli, D.N. Ruzic Center for Plasma Material Interactions, Department of Nuclear, Plasma and Radiological Engineering, University Illinois at Urbana–Champaign, Urbana, IL 61801, USA article info abstract Article history: The thermopower of W, Mo, Ta, Li and Sn has been measured relative to stainless steel, and the Seebeck Received 12 February 2013 coefficient of each of these materials has then been calculated. These are materials that are currently rel- Accepted 18 March 2013 evant to fusion research and form the backbone for different possibl eliquid limiter concepts includ ing Available online 26 March 2013 TEMHD concepts such as LiMIT. For molybdenum the Seebeck coefficient has a linear rise with temper- À1 À1 ature from SMo = 3.9 lVK at 30 °C to 7.5 lVK at 275 °C, while tungsten has a linear rise from À1 À1 SW = 1.0 lVK at 30 °C to 6.4 lVK at 275 °C, and tantalum has the lowest Seebeck coefficient of the À1 À1 solid metals studied with STa = À2.4 lVK at 30 °CtoÀ3.3 lVK at 275 °C. The two liquid metals, Li and Sn have also been measured. The Seebeck coefficient for Li has been re-measured and agrees with past measurements. As seen with Li there are two distinct phases in Sn also correspondi ngto the solid À1 À1 and liquid phases of the metal. -
Thermoelectric Properties of Silicon Germanium
Clemson University TigerPrints All Dissertations Dissertations 5-2015 Thermoelectric Properties of Silicon Germanium: An Investigation of the Reduction of Lattice Thermal Conductivity and Enhancement of Power Factor Ali Sadek Lahwal Clemson University Follow this and additional works at: https://tigerprints.clemson.edu/all_dissertations Recommended Citation Lahwal, Ali Sadek, "Thermoelectric Properties of Silicon Germanium: An Investigation of the Reduction of Lattice Thermal Conductivity and Enhancement of Power Factor" (2015). All Dissertations. 1482. https://tigerprints.clemson.edu/all_dissertations/1482 This Dissertation is brought to you for free and open access by the Dissertations at TigerPrints. It has been accepted for inclusion in All Dissertations by an authorized administrator of TigerPrints. For more information, please contact [email protected]. Thermoelectric Properties of Silicon Germanium: An Investigation of the Reduction of Lattice Thermal Conductivity and Enhancement of Power Factor ___________________________________________________________________ A Dissertation Presented to the Graduate School of Clemson University ___________________________________________________________________ In Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Physics ____________________________________________________________________ by Ali Sadek Lahwal May 2015 ____________________________________________________________________ Accepted by: Dr. Terry Tritt, Committee Chair Dr. Jian He Dr. Apparao Rao Dr. Catalina -
Thermoelectric Properties of Sb-S System Compounds from DFT Calculations
materials Article Thermoelectric Properties of Sb-S System Compounds from DFT Calculations Hailong Yang 1,2, Pascal Boulet 1,* and Marie-Christine Record 2 1 Campus St Jérôme, Aix-Marseille University, CNRS, Madirel, 13013 Marseille, France; [email protected] 2 Campus St Jérôme, Aix-Marseille University, University of Toulon, CNRS, IM2NP, 13013 Marseille, France; [email protected] * Correspondence: [email protected]; Tel.: +33-4135-518-10 Received: 12 August 2020; Accepted: 19 October 2020; Published: 22 October 2020 Abstract: By combining density functional theory, quantum theory of atoms in molecules and transport properties calculations, we evaluated the thermoelectric properties of Sb-S system compounds and shed light on their relationships with electronic structures. The results show that, for Sb2S3, the large density of states (DOS) variation induces a large Seebeck coefficient. Taking into account the long-range weak bonds distribution, Sb2S3 should exhibit low lattice thermal conductivity. Therefore, Sb2S3 is promising for thermoelectric applications. The insertion of Be atoms into the Sb2S3 interstitial sites demonstrates the electrical properties and Seebeck coefficient anisotropy and sheds light on the understanding of the role of quasi-one-dimensional structure in the electron transport. The large interstitial sites existing in SbS2 are at the origin of phonons anharmonicity which counteracts the thermal transport. The introduction of Zn and Ga atoms into these interstitial sites could result in an enhancement of all the thermoelectric properties. Keywords: chalcogenides; thermoelectric; DFT;QTAIM; transport properties; structure-properties relationships 1. Introduction In a preceding paper [1], we performed a chemical bonding analysis on the ternary Cu-Sb-Se system compounds and showed that the weak interactions, either in local or whole structure, played an important role in lattice thermal conductivity. -
Room Temperature Seebeck Coefficient Measurement of Metals and Semiconductors
Room Temperature Seebeck Coefficient Measurement of Metals and Semiconductors by Novela Auparay As part of requirement for the degree of Bachelor Science in Physics Oregon State University June 11, 2013 Abstract When two dissimilar metals are connected with different temperature in each end of the joints, an electrical potential is induced by the flow of excited electrons from the hot joint to the cold joint. The ratio of the induced potential to the difference in temperature of between both joints is called Seebeck coefficient. Semiconductors are known to have high Seebeck coefficient values(∼ 200-300 µV/K). Unlike semiconductors, metals have low Seebeck coefficient (∼ 0-3 µV/K). Seebeck coefficient of metals, such as aluminum and niobium, and semiconductor, such as tin sulfide is measured at room temperature. These measurements show that our system is capable to measure Seebeck coefficient in range of (∼ 0-300 µV/K). The error in the system is measured to be ±0:14 µV/K. Acknowledgements I would like to thank Dr. Janet Tate for giving me the opportunity to work in her lab. I would like to thank her for her endless support and patience in helping me complete this project. I would like to thank Jason Francis who made the samples and wrote the program used in this project. I would like to thank the department of human resources of Papua, Indonesia for giving me the opportunity to study at Oregon State University. I would like to thank Corinne Manogue and Mary Bridget Kustusch for all the support they gave me along the way. -
Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit
Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit Item Type Article Authors Sharma, S.; Sarath Kumar, S. R.; Schwingenschlögl, Udo Citation Sharma S, Kumar S, Schwingenschlögl U (2017) Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit. Physical Review Applied 8. Available: http://dx.doi.org/10.1103/physrevapplied.8.044013. Eprint version Publisher's Version/PDF DOI 10.1103/physrevapplied.8.044013 Publisher American Physical Society (APS) Journal Physical Review Applied Rights Archived with thanks to Physical Review Applied Download date 27/09/2021 11:57:17 Link to Item http://hdl.handle.net/10754/626090 PHYSICAL REVIEW APPLIED 8, 044013 (2017) Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit S. Sharma, S. Kumar, and U. Schwingenschlögl* Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia (Received 8 April 2017; revised manuscript received 22 June 2017; published 25 October 2017) We study the thermoelectric properties of As and Sb monolayers (arsenene and antimonene) using density-functional theory and the semiclassical Boltzmann transport approach. The materials show large band gaps combined with low lattice thermal conductivities. Specifically, the small phonon frequencies and group velocities of antimonene lead to an excellent thermoelectric response at room temperature. We show that n-type doping enhances the figure of merit. DOI: 10.1103/PhysRevApplied.8.044013 I. INTRODUCTION to other two-dimensional materials, such as graphene and phosphorene. To cope with growing energy demands, alternative A series of studies has explored the electronic properties of approaches are required that can reduce the dependence arsenene and antimonene [23–32]. -
Experimental Studies of the Thermoelectric Properties of Microstructured and Nanostructured Lead Salts
Experimental Studies of the Thermoelectric Properties of Microstructured and Nanostructured Lead Salts by Kathleen C. Barron Submitted to the Department of Mechanical Engineering A . in Partial Fulfillment of the Requirements for the Degree of - - Bachelors of Science in Mechanical Engineering MASSACHUSETTS INSTITUTE OF TECHNOLOGY at the Massachusetts Institute of Technology APR 13 2005 February 2005 >'' 1ns Vv'thlbin Rnrrrn LIBRARIES All rights reserved The author hereby grants to MIT permission to reproduce an to distribute publicly paper and electronic copies of this thesis document in whole or in part. Signatureof Author ............. .............................................................. Department of Mechanical Engineering January 14, 2005 Certified by ......... .... Gang Chen Professor of Mechanical Engineering Thesis Supervisor Accepted by . ...................................................................................... Ernest Cravalho Undergraduate Officer 1. Experimental Studies in the Thermoelectric Properties of Microstructured and Nanostructured Lead Salts by Kathleen C. Barron Submitted to the Department of Mechanical Engineering in Partial Fulfillment of the Requirements for the Degree of Bachelors of Science in Mechanical Engineering Abstract Thermoelectric devices allow for direct conversion between thermal and electrical energy. There applications, however, are severely limited by their inefficiency. A reduction in thermal conductivity of a material potentially enhances its overall thermoelectric performance -
A Review on Thermoelectric Generators: Progress and Applications
energies Review A Review on Thermoelectric Generators: Progress and Applications Mohamed Amine Zoui 1,2 , Saïd Bentouba 2 , John G. Stocholm 3 and Mahmoud Bourouis 4,* 1 Laboratory of Energy, Environment and Information Systems (LEESI), University of Adrar, Adrar 01000, Algeria; [email protected] 2 Laboratory of Sustainable Development and Computing (LDDI), University of Adrar, Adrar 01000, Algeria; [email protected] 3 Marvel Thermoelectrics, 11 rue Joachim du Bellay, 78540 Vernouillet, Île de France, France; [email protected] 4 Department of Mechanical Engineering, Universitat Rovira i Virgili, Av. Països Catalans No. 26, 43007 Tarragona, Spain * Correspondence: [email protected] Received: 7 June 2020; Accepted: 7 July 2020; Published: 13 July 2020 Abstract: A thermoelectric effect is a physical phenomenon consisting of the direct conversion of heat into electrical energy (Seebeck effect) or inversely from electrical current into heat (Peltier effect) without moving mechanical parts. The low efficiency of thermoelectric devices has limited their applications to certain areas, such as refrigeration, heat recovery, power generation and renewable energy. However, for specific applications like space probes, laboratory equipment and medical applications, where cost and efficiency are not as important as availability, reliability and predictability, thermoelectricity offers noteworthy potential. The challenge of making thermoelectricity a future leader in waste heat recovery and renewable energy is intensified by the integration of nanotechnology. In this review, state-of-the-art thermoelectric generators, applications and recent progress are reported. Fundamental knowledge of the thermoelectric effect, basic laws, and parameters affecting the efficiency of conventional and new thermoelectric materials are discussed. The applications of thermoelectricity are grouped into three main domains. -
Data-Driven Review of Thermoelectric Materials: Performance and Resource Considerations † ‡ ‡ ‡ § † ‡ Michael W
Review pubs.acs.org/cm Data-Driven Review of Thermoelectric Materials: Performance and Resource Considerations † ‡ ‡ ‡ § † ‡ Michael W. Gaultois,*, , Taylor D. Sparks,*, Christopher K. H. Borg, Ram Seshadri,*, , , ∥ ∥ William D. Bonificio, and David R. Clarke † ‡ § Department of Chemistry and Biochemistry, Materials Research Laboratory, and Materials Department, University of California, Santa Barbara, California 93106, United States ∥ School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States ABSTRACT: In this review, we describe the creation of a large database of thermoelectric materials prepared by abstracting information from over 100 publications. The database has over 18 000 data points from multiple classes of compounds, whose relevant properties have been measured at several temperatures. Appropriate visualization of the data immediately allows certain insights to be gained with regard to the property space of plausible thermoelectric materials. Of particular note is that any candidate material needs to display an electrical resistivity value that is close to 1 mΩ cm at 300 K, that is, samples should be significantly more conductive than the Mott minimum metallic conductivity. The Herfindahl−Hirschman index, a commonly accepted measure of market concentration, has been calculated from geological data (known elemental reserves) and geopolitical data (elemental production) for much of the periodic table. The visualization strategy employed here allows rapid sorting