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Quantum Computing on Silicon QUANTUM COMPUTING ON SILICON Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco QUANTUM COMPUTATION PROMISES Factorizing prime numbers for security, AI, data mining 2000 logical qubits Quantum chemistry for medicine and material developments 200 logical qubits Quantum supremacy 50 logical computationnal qubits/ 50 physical qubits for sampling ETH Zurich, Bristol, Usherbrooke, Google… Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 2 QUANTUM COMPUTATION NUMBERS >> Still improving Hundreds of qubits Millions of errorless quantum operations Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 3 LIVING WITH ERRORS Millions of errorless quantum operations Quantum Error Correction protocols 1 errorless logical qubit Millions of physical > 1000 physical qubits qubits in a 2D array Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 4 SINGLE QUBIT SCALE FIGURES OF MERIT SPEED FIDELITY SIZE Competitive run-time Logical qubits better Manageable quantum calculation than physical qubits dimensions of the quantum circuit Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 5 BENCHMARK AND PLAYERS Superconductors Silicon spins Trapped ions Photons Size (100µm)² (100nm)² (1mm)² 1 mm2 50% (measurement and Fidelity ~99.9% >98% 99.99% generation) 98% (one and two-qubit gate) Speed 200 ns 5 µs 100 µs 1 ms Number of 17 (claimed 72) 2 20 18 entangled qubits IBM, Google, Intel, Dwave, Intel, HRL, Silicon Quantum Xanadu, Quandela, HP, Tundra IonQ Companies Rigetti, QCI… Computing systems, PsiQuantum UNSW, CEA-CNRS Grenoble, Leading UCSB, Yale, IBM Zurich, Tokyo University, TU Delft, Innsbruck, Oxford, NIST, Oxford University academic teams CEA, Berkeley, TU Delft, MIT Princeton, Sandia, Uwisconsin, UMaryland, Sussex, MIT NTT | 6 MATURITY OF VLSI TECHNOLOGY Integration Better control of interfaces Better control of thicknesses Better control of chemical composition Better control of critical dimensions Superconductors Semiconductors Trapped ions Photons Leti Devices Workshop | Maud VINET| Dec 2nd, 2018, Nikko Hotel, San Francisco | 7 REQUIRED FOR ALL TECHNOLOGICAL PLATFORMS Superconductors Silicon spins Trapped ions Photons Yield and variability control Yield and variability control Better interfaces Integration of all components Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 8 SILICON QUBIT Spin degree of freedom of an electron 0 → 1 → Gate defined quantum dots Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 9 QUBIT FIGURES OF MERIT Speed Fidelity Size Large ensemble of qubits Variability Large scale control Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 10 GRENOBLE MULTIDISCIPLINARY SKILLS VLSI technology Advanced CMOS integration IC design and architecture CMOS Device physics Spin and charge properties of Si CMOS devices Quantum engineering Coherent control of electron spins in semiconductors © © Jacques-Marie / FRANCILLON CEA Leti Devices Workshop | Maud VINET| Dec 2nd, 2018, Nikko Hotel, San Francisco | 11 GRENOBLE LONG STANDING EFFORTS TOWARDS SILICON QUANTUM COMPUTING 2015 2018 Symmetric exchange of a spin Spin entanglement between 2 electrons at distance in 2011 2012 semiconductor Control displacement of 2x2 array electron quantum devices individual electrons control 2017 Coherent 2011 Gate1 Gate2 shuttling of Fast Cphase Source individual protocol for Drain electron spins 2007 50nm Sensor Qubit Electrons filling in Control of Si individual a 9 dot array CMOS quantum 2010 electron spins devices 2016 Spectroscopy First CMOS of individual Qubit Key datesKey dopants in si 2018 CMOS 2017 nanodevices High fidelity spin 2013 3D integration for read-out in Si electron spin qubits |↑⟩ |↓⟩ CMOS devices Coherent patents control on two dopants 90s 00s 10s 2011 Demonstration 2018 Lg = 50nm Si/Si 2016 10Gbit/s photonic CMOS First 300mm 2017 transceiver monolithic 3D Demonstration integration of 1µm pitch assets WtW Key technologicalKey 2018 2007 2009 2013…2015 2016 ERC QuCube Poesi AFSID SIAM MOSQUITO Electron Atomic SISPIN pumps for functionalities TOLOP metrology) in Si devices) Key fundingsKey Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 12 1ST CMOS SPIN QUBITS (OUR WORK) Single qubit gate High fidelity RF scalable Maurand, Nat. Comm. (2016) spin read-out Hutin, VLSI (2016) Urdampilleta (to be published) 100nm Gate1 Gate2 Source Drain Sensor Qubit 50nm |↑⟩ |↓⟩ Manipulation time 20ns Fidelity > 99% Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 13 NEXT STEP: SCALABILITY? Gate1 Gate2 Source Drain Sensor Qubit 50nm Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 14 NEXT STEP: SCALABILITY? Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 15 NEXT STEP: SCALABILITY Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 16 QUCUBE CONCEPT Patent Hutin, Meunier, De Franceschi, Vinet (2017) Control gates to manage qubit manipulation Qubit layer Control gates to tune detector/qubit coupling Sensing layer Gates to load carriers in sensing layer Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 17 MORE TECHNICAL DETAILS DURING THE CONFERENCE Leti Devices Workshop | Maud VINET| Dec 2nd, 2018, Nikko Hotel, San Francisco | 18 CONCLUSION Leti Devices Workshop | Maud Vinet| Dec 2nd, 2018, Nikko Hotel, San Francisco | 19 CONCLUSION We are willing to open a viable path to large-scale qubit integration Superconducting qubits 100000 10000 Trapped ions 1000 Silicon qubits 100 10 First CMOS-based qubit # of of qubits # 1 (Grenoble) 0,1 1995 2005 2015 2025 year Create vast opportunities for the industrial ecosystem • Semiconductor industry • Software industry | 20 www.quantumsilicon-grenoble.eu | 21.
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