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OPTI510R: Photonics
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona [email protected] Meinel building R.626 Photodetectors Introduction Most important characteristics Photodetector types • Thermal photodetectors • Photoelectric effect • Semiconductor photodetectors Photodetectors p-n photodiode Response time p-i-n photodiode APD photodiode Noise Wiring Arrayed detector (Home Reading) Point-to-point WDM Transmission System - Building Blocks - transmitter receiver l l 1 terminal transmission line terminal 1 Tx point-to-point link section Rx l2 span l2 amplifier span l3 SMF or SMF or l3 NZDF NZDF EDFA EDFA EDFA l4 l4 DC DC l l 5 WDM mux 5 WDM demux l6 l6 dispersion dispersion ) amplifier - compensation compensation transmissionfiber transmissionfiber line) amplifier - (pre (in (booster) (booster) amplifier ln ln Raman Raman pump pump Laser sources Photodetectors Introduction Convert optical data into electrical data Laser beam characterization • Power measurement • Pulse energy measurement • Temporal waveform measurement • Beam profile Introduction Photodetector converts photon energy to a signal, mostly electric signal such as current (sort of a reverse LED) Photoelectric detector • Carrier generation by incident light • Carrier transport and/or multiplication by current gain mechanism • Interaction of current with external circuit Thermal detector • Conversion of photon to phonon (heat) • Propagation of phonon • Detection of phonon Important characteristics Wavelength coverage Sensitivity Bandwidth (response -
Photoconductivity of Few-Layered P-Wse2 Phototransistors Via Multi-Terminal Measurements
Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements Nihar R. Pradhan a,*, Carlos Garcia a,b, Joshua Holleman a,b, Daniel Rhodes a,b, Chason Parkera,c, Saikat Talapatra d, Mauricio Terrones e,f, Luis Balicas a,* and Stephen A. McGill a ,* aNational High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA bDepartment of Physics, Florida State University, Tallahassee, FL 32306, USA c Leon High School, Tallahassee, FL 32308, USA dDepartment of Physics, Southern Illinois University, Carbondale, IL 62901, USA eDepartment of Physics, Pennsylvania State University, PA 16802, USA fCenter for 2-Dimensional and Layered Materials, Pennsylvania State University, PA 16802, USA Abstract: Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. -
Visions of Electric Media Electric of Visions
TELEVISUAL CULTURE Roberts Visions of Electric Media Ivy Roberts Visions of Electric Media Television in the Victorian and Machine Ages Visions of Electric Media Televisual Culture Televisual culture encompasses and crosses all aspects of television – past, current and future – from its experiential dimensions to its aesthetic strategies, from its technological developments to its crossmedial extensions. The ‘televisual’ names a condition of transformation that is altering the coordinates through which we understand, theorize, intervene, and challenge contemporary media culture. Shifts in production practices, consumption circuits, technologies of distribution and access, and the aesthetic qualities of televisual texts foreground the dynamic place of television in the contemporary media landscape. They demand that we revisit concepts such as liveness, media event, audiences and broadcasting, but also that we theorize new concepts to meet the rapidly changing conditions of the televisual. The series aims at seriously analyzing both the contemporary specificity of the televisual and the challenges uncovered by new developments in technology and theory in an age in which digitization and convergence are redrawing the boundaries of media. Series editors Sudeep Dasgupta, Joke Hermes, Misha Kavka, Jaap Kooijman, Markus Stauff Visions of Electric Media Television in the Victorian and Machine Ages Ivy Roberts Amsterdam University Press Cover illustration: ‘Professor Goaheadison’s Latest,’ Fun, 3 July 1889, 6. Cover design: Coördesign, Leiden -
An Investigation on the Printing of Metal and Polymer Powders Using Electrophotographic Solid Freeform Fabrication
AN INVESTIGATION ON THE PRINTING OF METAL AND POLYMER POWDERS USING ELECTROPHOTOGRAPHIC SOLID FREEFORM FABRICATION By AJAY KUMAR DAS A THESIS PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE UNIVERSITY OF FLORIDA 2004 Copyright 2004 by Ajay Kumar Das Dedicated to my mother. ACKNOWLEDGMENTS I extend my sincere gratitude to my advisor and chairman of the thesis committee, Dr. Ashok V. Kumar for his guidance and support during the research work which made this thesis possible. I would also like to thank the thesis committee members Dr. John K. Schueller and Dr. Nagaraj Arakere for their patience in reviewing the thesis and for their valuable advice during the research work. I thank the Design and Rapid Prototyping Laboratory co-workers for being helpful, supportive and making the research a pleasurable experience. Last but not least, I would like to thank my parents for their love and encouragement during my studies abroad. iv TABLE OF CONTENTS Page ACKNOWLEDGMENTS ................................................................................................. iv LIST OF TABLES............................................................................................................. ix LIST OF FIGURES ........................................................................................................... xi ABSTRACT.......................................................................................................................xv CHAPTER -
Laser Printer - Wikipedia, the Free Encyclopedia
Laser printer - Wikipedia, the free encyclopedia http://en. rvi kipedia.org/r,vi ki/Laser_pri nter Laser printer From Wikipedia, the free encyclopedia A laser printer is a common type of computer printer that rapidly produces high quality text and graphics on plain paper. As with digital photocopiers and multifunction printers (MFPs), Iaser printers employ a xerographic printing process but differ from analog photocopiers in that the image is produced by the direct scanning of a laser beam across the printer's photoreceptor. Overview A laser beam projects an image of the page to be printed onto an electrically charged rotating drum coated with selenium. Photoconductivity removes charge from the areas exposed to light. Dry ink (toner) particles are then electrostatically picked up by the drum's charged areas. The drum then prints the image onto paper by direct contact and heat, which fuses the ink to the paper. HP I-aserJet 4200 series printer Laser printers have many significant advantages over other types of printers. Unlike impact printers, laser printer speed can vary widely, and depends on many factors, including the graphic intensity of the job being processed. The fastest models can print over 200 monochrome pages per minute (12,000 pages per hour). The fastest color laser printers can print over 100 pages per minute (6000 pages per hour). Very high-speed laser printers are used for mass mailings of personalized documents, such as credit card or utility bills, and are competing with lithography in some commercial applications. The cost of this technology depends on a combination of factors, including the cost of paper, toner, and infrequent HP LaserJet printer drum replacement, as well as the replacement of other 1200 consumables such as the fuser assembly and transfer assembly. -
Inventing Television: Transnational Networks of Co-Operation and Rivalry, 1870-1936
Inventing Television: Transnational Networks of Co-operation and Rivalry, 1870-1936 A thesis submitted to the University of Manchester for the degree of Doctor of Philosophy In the faculty of Life Sciences 2011 Paul Marshall Table of contents List of figures .............................................................................................................. 7 Chapter 2 .............................................................................................................. 7 Chapter 3 .............................................................................................................. 7 Chapter 4 .............................................................................................................. 8 Chapter 5 .............................................................................................................. 8 Chapter 6 .............................................................................................................. 9 List of tables ................................................................................................................ 9 Chapter 1 .............................................................................................................. 9 Chapter 2 .............................................................................................................. 9 Chapter 6 .............................................................................................................. 9 Abstract .................................................................................................................... -
High-Temperature Ultraviolet Photodetectors: a Review
High-temperature Ultraviolet Photodetectors: A Review Ruth A. Miller,1 Hongyun So,2 Thomas A. Heuser,3 and Debbie G. Senesky1, a) 1Department of Aeronautics and Astronautics Stanford University, Stanford, CA 94305, USA 2Department of Mechanical Engineering Hanyang University, Seoul 04763, Korea 3Department of Materials Science and Engineering Stanford University, Stanford, CA 94305, USA Abstract Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short wavelengths (i.e., ultraviolet, UV) in high temperature regions (up to 300°C). The main driver for the development of high-temperature UV detection instrumentation is in-situ monitoring of hostile environments and processes found within industrial, automotive, aerospace, and energy production systems that emit UV signatures. In this review, a summary of the optical performance (in terms of photocurrent-to-dark current ratio, responsivity, quantum efficiency, and response time) and uncooled, high-temperature characterization of III-nitride, SiC, and other wide bandgap semiconductor UV photodetectors is presented. a) Author to whom correspondence should be addressed. E-mail: [email protected] 1 I. INTRODUCTION On the electromagnetic spectrum, the ultraviolet (UV) region spans wavelengths from 400 nm to 10 nm (corresponding to photon energies from 3 eV to 124 eV) and is typically divided into three spectral bands: UV-A (400–320 nm), UV-B (320–280 nm), and UV-C (280– 10 nm). The Sun is the most significant natural UV source. The approximate solar radiation spectrum just outside Earth’s atmosphere, calculated as black body radiation at 5800 K using Plank’s law, is shown in Fig. -
Photoconductivity
INSTRUCTIONAL MANUAL Photoconductivity Applied Science Department NITTTR, Sector-26, Chandigarh 0 EXPERIMENT: To study the Photoconductivity of CdS photo-resistor at constant irradiance and constant voltage a. To plot the current- voltage characteristics at constant irradiance. b. To measure photocurrent IPh as a function of irradiance at constant voltage. APPARATUS: Lamp housing, adjustable slit, polarizer, analyzer, two convex lens, photo- resistor, multimeter, an optical bench with fixing mounts. THEORY: Photoconductivity is an optical and electrical phenomenon in which a material become more electrically conductive due to the absorption of electromagnetic radiation such as visible light, ultraviolet light, infrared light, or gamma radiations. It is the effect of increasing electrical conductivity in a solid due to light absorption. When the so-called internal photo effect takes place, the energy absorbed enables the transition of activator electrons into the conduction band and the charge exchange of traps with holes being created in the valence band. In the process, the number of charge carriers in the crystal lattice increases and as a result, the conductivity is enhanced. When light is absorbed by a material such as a semiconductor, the number of free electrons and electron holes changes and raises its electrical conductivity. To cause excitation, the light that strikes the semiconductor must have enough energy to raise electrons across the band gap. When a photoconductive material is connected as part of a circuit, it functions as a resistor whose resistance depends on the light intensity. In this context the material is called a photoresistor. Fig.1 depicts the current flow in a Fig.1 Working of a photoresistor photoresistor when exposed to light rays. -
Photosensitive Camera Tubes and Devices Handbook
11.2 PHOTOSENSITIVE CAMERA TUBES AND DEVICES 11.1 PHOTOSENSITIVITY / 11.2 11.1.1 Photoemitters / 11.2 11.1.2 Photoconductors / 11.5 11.2 PHOTOELECTRIC-INDUCED TELEVISION SIGNAL GENERATION / 11.5 11.2.1 Photoemission-Induced Charge Images / 11.5 11.2.2 Secondary-Emission-Induced Charge Images / 11.6 11.2.3 Electron-Bombardment-Induced Conductivity / 11.8 11.2.4 Photoconductive-Generated Charge Images / 11.9 11.2.5 Generation of Video Signals by Scanning / 11.11 11.2.6 Low-Velocity Scanning / 11.11 11.2.7 Return-Beam Signal Generation / 11.13 11.2.8 High-Velecity Scanning / 11.14 11.3 EVOLUTION AND DEVELOPMENT OF TELEVISION CAMERA TUBES / 11.14 11.3.1 Nonstorage Tubes / 11.14 11.3.2 Storage Tubes / 11.15 11.4 VIDICON-TYPE CAMERA TUBES / 11.26 11.4.1 Antimony Trisulfide Photoconductor / 11.26 11.4.2 Lead Oxide Photoconductor / 11.28 11.4.3 Selenium Photoconductor / 11.30 11.4.4 Silicon-Diode Photoconductive Target / 11.31 11.4.5 Cadmium Selenide Photoconductor / 11.32 11.4.6 Zinc Selenide Photoconductor / 11.32 11.5 INTERFACE WITH THE CAMERA / 11.33 11.5.1 Optical Input / 11.34 11.5.2 Operating Voltages / 11.34 11.5.3 Dynamic Focusing / 11.36 11.5.4 Beam Blanking / 11.36 11.5.5 Beam Trajectory Control / 11.38 11.5.6 Video Output / 11.40 11.5.7 Deflecting Coils and Circuits / 11.42 11.5.8 Magnetic Shielding / 11.42 11.5.9 Anti-Comet-Tail Tube / 11.42 11.6 CAMERA TUBE PERFORMANCE CHARACTERISTICS / 11.43 11.6.1 Sensitivity and Output / 11.44 11.6.2 Resolution / 11.45 11.6.3 Lag / 11.49 11.6.4 Lag-Reduction Techniques / 11.50 11.7 SINGLE-TUBE COLOR CAMERA SYSTEMS / 11.54 11.7.1 Single-Output-Signal Tubes / 11.55 11.7.2 Multiple-Output-Signal Tubes / 11.58 11.8 SOLID-STATE IMAGER DEVELOPMENT / 11.60 11.8.1 Early Imager Devices / 11.60 11.8.2 Improvements in Signal-to-Noise Ratio / 11.60 11.8.3 CCD Structures / 11.61 11.8.4 New Developments / 11.63 REFERENCES / 11.64 PHOTOSENSITIVITY 11.3 11.1 PHOTOSENSITIVITY A photosensitive camera tube is the light-sensitive device utilized in a television camera to develop the video signal. -
Cdse/Zns Quantum Dot Encapsulated Mos2 Phototransistor for Enhanced
www.nature.com/scientificreports OPEN CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness Received: 7 June 2018 Jinwu Park1, Geonwook Yoo2 & Junseok Heo1 Accepted: 17 December 2018 Notable progress achieved in studying MoS based phototransistors reveals the great potential to Published: xx xx xxxx 2 be applicable in various feld of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate efects of gamma rays on the characteristics of MoS2 phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an efective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor. Two-dimensional materials such as transition metal dichalcogenides (TMD) have received considerable attention as a promising channel material for nanoelectronics devices1–6. Among a variety of TMD materials, molybdenum disulfde (MoS2) is the best known and is studied extensively. MoS2-based thin-flm transistors have interest- ing electrical characteristics, such as high ON/OFF ratio (~108) and high electron mobility (~200 cm2∙Vs−1)1. In addition, MoS2 is appropriate as an absorption layer of optoelectronic devices owing to its bandgap of 1.2–1.8 eV 7 depending on its number of layers (bulk MoS2 has an indirect bandgap of 1.2 eV and single-layer MoS2 has a direct bandgap of 1.8 eV8), fast photo-switching (within 110 μs9), and absorption coefcient (α = 1–1.5 × 106 cm−1 10 6 −1 11 for single-layer MoS2 and 0.1–0.6 × 10 cm for bulk MoS2 in the wavelength of 500–1200 nm). -
Media Technology and Society
MEDIA TECHNOLOGY AND SOCIETY Media Technology and Society offers a comprehensive account of the history of communications technologies, from the telegraph to the Internet. Winston argues that the development of new media, from the telephone to computers, satellite, camcorders and CD-ROM, is the product of a constant play-off between social necessity and suppression: the unwritten ‘law’ by which new technologies are introduced into society. Winston’s fascinating account challenges the concept of a ‘revolution’ in communications technology by highlighting the long histories of such developments. The fax was introduced in 1847. The idea of television was patented in 1884. Digitalisation was demonstrated in 1938. Even the concept of the ‘web’ dates back to 1945. Winston examines why some prototypes are abandoned, and why many ‘inventions’ are created simultaneously by innovators unaware of each other’s existence, and shows how new industries develop around these inventions, providing media products for a mass audience. Challenging the popular myth of a present-day ‘Information Revolution’, Media Technology and Society is essential reading for anyone interested in the social impact of technological change. Brian Winston is Head of the School of Communication, Design and Media at the University of Westminster. He has been Dean of the College of Communications at the Pennsylvania State University, Chair of Cinema Studies at New York University and Founding Research Director of the Glasgow University Media Group. His books include Claiming the Real (1995). As a television professional, he has worked on World in Action and has an Emmy for documentary script-writing. MEDIA TECHNOLOGY AND SOCIETY A HISTORY: FROM THE TELEGRAPH TO THE INTERNET BrianWinston London and New York First published 1998 by Routledge 11 New Fetter Lane, London EC4P 4EE Simultaneously published in the USA and Canada by Routledge 29 West 35th Street, New York, NY 10001 Routledge is an imprint of the Taylor & Francis Group This edition published in the Taylor & Francis e-Library, 2003. -
Poly(N-Vinylcarbazole) (PVK) Photoconductivity Enhancement Induced by Doping with Cds Nanocrystals Through Chemical Hybridization
J. Phys. Chem. B 2000, 104, 11853-11858 11853 Poly(N-vinylcarbazole) (PVK) Photoconductivity Enhancement Induced by Doping with CdS Nanocrystals through Chemical Hybridization Suhua Wang,† Shihe Yang,*,† Chunlei Yang,‡ Zongquan Li,‡ Jiannong Wang,‡ and Weikun Ge‡ Department of Chemistry, The Hong Kong UniVersity of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, and Department of Physics, The Hong Kong UniVersity of Science and Technology, Clear Water Bay, Kowloon, Hong Kong ReceiVed: February 9, 2000; In Final Form: June 7, 2000 We have functionalized poly(N-vinyl carbazole) (PVK) by controlled sulfonation. CdS nanocystals of 3-20 nm across were synthesized in the sulfonated PVK matrix with the CdS molar fraction of ∼1-18%. The CdS nanoparticle size increased with the molar fraction of CdS. At high CdS molar fractions, the CdS nanocrystals exist in both cubic and hexagonal phases. Photoluminescence efficiency of PVK decreases when the molar fraction of CdS increases due to quenching through interfacial charge transfer. Photoluminescence attributable to the CdS nanocrystals can be observed only at low molar fractions of CdS. Significant enhancement in photoconductivity induced by the chemical doping of CdS in PVK has also been demonstrated. Introduction formation of the CdS-PVK nanocomposite. The maximum molar fraction of CdS in the nanocomposite was ∼18% (∼5% Nanocomposites consisting of inorganic nanoparticles and v/v) based on the sulfonation degree of PVK, as determined by organic polymers often exhibit a host of mechanical, electrical, both X-ray photoelectron spectroscopy (XPS) and secondary optical and magnetic properties, which are far superior compared 7 1-4 ion mass spectrometry (SIMS).