1 Crystaldraw: a Computer Model to Model Crystal Structures, Axial And

Total Page:16

File Type:pdf, Size:1020Kb

1 Crystaldraw: a Computer Model to Model Crystal Structures, Axial And CrystalDraw: A Computer Model to Model Crystal Structures, Axial and Planar Channelling Directions and Crystal Alignment For Channelling Experiments J. England*1, A. Ellis, K. Piper Radiate Report R002 ABSTRACT To aid the understanding of crystallographic concepts, a C# computer programme “CrystalDraw” has been written to produce models of crystal structures and their associated axial and planar channelling directions in three-dimensions and to generate their corresponding two-dimensional projections. Visualisation of the models using specially written macros within Paraview illustrates how to orient and manipulate crystals for channelling measurements and guide interpretations of collected channelling data. INTRODUCTION This paper describes a programme, “CrystalDraw”, that generates and visualises crystal structures, their channelling directions and planes in three dimensions and relative to two dimensional projections and shows how to orient crystals on experimental goniometers. The source code is freely available by contacting the corresponding author and through the RADIATE program site [1] so that users can understand the concepts used to generate the visualisations and customise the program to describe experiments on a chosen crystal using the apparatus present in a specific laboratory. Visualisation of Crystallography Concepts This report is not intended to teach the concepts of crystallography as many excellent text books, such as Hammond [2], and on-line courses, such as Hoffmann & Sartor [3], already exist. However, the visualisation of crystallographic concepts for the novice can be difficult. Text books on crystallography, such as [2], repeatedly suggest the use of three dimensional models to aid the understanding of the reader. Making physical models can be a challenge and does not always easily illustrate a concept. The first motivation for producing the CrystalDraw programme was to produce a virtual 3D visualisation package in which a crystal structure can be generated and then inspected. Whilst there are many software packages and excellent websites already available that show crystal structures, the underlying assumptions used to produce the structures are not always accessible. By making the source code available, a second motivation was to allow the underlying mathematical methods and symmetry considerations used to generate the crystal structures to be understood. In this way concepts such as Bravais lattices, unit cells, equivalent positions (and perhaps in the future generation of the basis atoms from these) can be illustrated. Orientations of zone axes and planes as referenced by Miller indices (and in the future by Weber *Corresponding author: [email protected], Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK 1 symbols and Miiler-Bravais indices) can be plotted relative to the crystal lattice and atoms. Thirdly, and of importance for the ion beam community, CrystalDraw can be used as a 3D CAD tool to visualise real world problems applied to a generated crystal structure. Crystallographic information can be communicated through two dimensional methods such as stereographic projections. The authors initially had difficulty converting the information on a stereographic projection into instructions of how to manipulate a six- axis goniometer to align crystal samples to chosen axial and planar channelling directions. The literature also uses a variety of types of projection, so CrystalDraw can generate projections of stereographic, equiangular azimuthal and gnomic types. CrystalDraw allows alignment procedures to be visualised and hence experiments can be planned before committing accelerator time. Application to Ion Beam Analysis Channelling Rutherford Backscattering Spectroscopy (RBS/c) and related ion beam analysis (IBA) techniques such as channelling PIXE, NRA and ion transmission were first developed in the 1970s. An excellent review of the first 50 years of channelling IBA has been given by Vantomme [4]. In these techniques, the spectroscopic yield is measured as the direction of a primary ion beam towards a crystalline sample is varied around a channelling direction. To extract the information from channelling curves the experimenter must first be convinced that features in the channelling dip are due to material properties and not from experimental artefacts. This requires a thorough understanding of the experiment and confidence that the crystal is aligned as intended. Hence a fourth motivation for developing CrystalDraw was to understand scanning directions considered in experiments. The theory of ion channelling using the “string model” approach has been described by Feldman et al [5], amongst others. Whilst CrystalDraw calculates channel angular half widths and minimum yields to aid channel identification, we have used FLUX [6,7] to model measured dips in detail to extract material information or to investigate small experimental misalignments. It is our intention to evaluate other programs such as McChasy [8] and RBSADEC [9] in the future. The RBS/c technique is complementary to other crystallography measurements such as those collected using transmission electron microscopy (TEM) and x-ray diffraction (XRD) [4]. RBS/c is particularly sensitive to crystal imperfections. The primary beam cross sectional dimensions, typically a few mm but possibly down to a few nm, limits the spatial resolution to those dimensions and measurements average the sample characteristics under the beam irradiation area. RBS/c can detect point defects (such as interstitial atoms) and extended defects (such as stacking faults and lattice strain). The flux focussing nature of channelling makes defect detection very sensitive. By measuring along different channels, defect positions within the crystal lattice can be determined and by analysing within specific ranges of the scattered ion energies, RBS/c is also capable of measuring crystal qualities for different component elements at different depths in the crystal. TEM on the other hand, using electron beams focussed to a few nm, has a much higher spatial resolution than RBS/c but can only probe a sample area within a lamella (for cross sections) which are typically a few microns wide and few nm thick or within a field of view of a few microns for top down techniques. Point defects are not usually visible by TEM. XRD is strongly influenced 2 by the order of the crystal lattice and is a reference technique to determine crystal lattice constants. X-ray beam sizes are similar to the RBS/c ion beam dimensions but the depth of penetration of the x-rays is deeper (many microns) than ions. Although XRD does not inherently have any depth resolution, when a characteristic peak can be assigned to a particular element, it may be assigned to having arisen from reflections from a particular compositional layer of a sample. The widths of refraction peaks can also give information about variations in atomic positions and hence lattice disorder. RBS/c is most informative when considered in combination with these complementary techniques and other sources of information about the sample [4]. Previous Work In addition to those cited above, the following references were used extensively in preparing CrystalDraw: Doyle and co-workers at Sandia National Laboratories built on earlier work (especially Gemmel [10]) to produce papers and an associated excel worksheet that calculates half widths and yield minima for planar and axial channels [11-13]. Some examples of stereographic (actually azimuthal equi-angular) projections are included in the worksheet but the code used to generate them was not available. The calculations used look up tables for cubic crystals; we wanted to generate this information from first principles so that CrystalDraw should work for any crystal system. Much of the information used above is also included in Appendix 17 of the Handbook of Modern Ion Beam Materials Analysis [14] which also includes methods for aligning crystals on goniometers. The “Ion Implantation Technology Conference School Book” [15] has a detailed chapter on channelling and stereographic projections but is slightly confusing in showing stereographic and gnomic projections. This report describes the uses of CrystalDraw. Details of the C# code and python macros used within the Paraview visualisation programme are described in the appendix. 3 DESCRIPTIONS OF VISUALISATIONS Step 1 – Crystal Structure CrystalDraw creates crystal structures from crystal information files (CIF) that can be downloaded from the Crystallography Open Database [16]. Each CIF contains the symmetry information, lattice angles and dimensions as given in the International Tables for Crystallography which is available as a hypertext book on line [17] and the structures are well presented on another site [18]. This paper uses GaAs (case 9008845 in the database) as an example crystal. This form of GaAs (Space Group 216 “F-43m”) has the zinc blende structure, which is based on a face centred cubic structure. Si (case 9008565) has a similar structure, but the single type of atom moves Si into Space Group 227 “Fd3m”. CrystalDraw takes the information from the CIF file to generate the Bravais Lattice and atoms at the equivalent symmetry points. From this, the atoms within the unit cell can be visualised (Fig 1). A large crystal formed from a set of unit cells can also be shown so that channels can be visualised when orienting the crystal (see Fig 2). In this paper, the large
Recommended publications
  • The Reciprocal Lattice
    Appendix A THE RECIPROCAL LATTICE When the translations of a primitive space lattice are denoted by a, b and c, the vector p to any lattice point is given p = ua + vb + we. The definition of the reciprocal lattice is that the translations a*, b* and c*, which define the reciprocal lattice fulfil the following relationships: (A. I) a*.b = b*.c = c*.a = a.b* = b.c* =c. a*= 0 (A.2) It can then be easily shown that: (1) Ic* I = 1/c-spacing of primitive lattice and similarly forb* and a*. (2) a*= (b 1\ c)ja.(b 1\ c) b* = (c 1\ a)jb.(c 1\ a) c* =(a 1\ b)/c-(a 1\ b) These last three relations are often used as a definition of the reciprocal lattice. Two properties of the reciprocal lattice are particularly important: (a) The vector g* defined by g* = ha* + kb* + lc* (where h, k and I are integers to the point hkl in the reciprocal lattice) is normal to the plane of Miller indices (hkl) in the primary lattice. (b) The magnitude Ig* I of this vector is the reciprocal of the spacing of (hkl) in the primary lattice. AI ALLOWED REFLECTIONS The kinematical structure factor for reflections is given by Fhkl = I;J;exp[- 2ni(hu; + kv; + lw)] (A.3) where ui' v; and W; are the coordinates of the atoms and hkl the Miller indices of the reflection g. If there is only one atom at 0, 0, 0 in the unit cell then the structure factor will be independent of hkl since for all values of h, k and I we have Fhkl =f.
    [Show full text]
  • Search for X-Ray Channeling Radiation at Fermilab's Fast Facility
    SEARCH FOR X-RAY CHANNELING RADIATION AT FERMILAB'S FAST FACILITY by Patricia Kobak Hall A senior thesis submitted to the faculty of Brigham Young University - Idaho in partial fulfillment of the requirements for the degree of Bachelor of Science Department of Physics and Astronomy Brigham Young University - Idaho April 2017 Copyright c 2017 Patricia Kobak Hall All Rights Reserved BRIGHAM YOUNG UNIVERSITY DEPARTMENT APPROVAL of a senior thesis submitted by Patricia Kobak Hall This thesis has been reviewed by the research advisor, research coordinator, and department chair and has been found to be satisfactory. Date Matt Zacherson, Committee Leader Date Richard Hatt, Committee Member Date Jon Johnson, Committee Member Date Todd Lines, Thesis Advisor Date Stephen McNeil, Chair ABSTRACT SEARCH FOR X-RAY CHANNELING RADIATION AT FERMILAB'S FAST FACILITY Patricia Kobak Hall Department of Physics and Astronomy Bachelor of Science The Fermilab FAST facility has capability of producing a 50 GeV electron beam, which will be used to generate hard x-rays through a process called Channeling Radiation. This paper will investigate experimental solutions for high background during the beginning of the Channeling Radiation study, as well as propose ideas for modifying the beam line to decrease background. ACKNOWLEDGMENTS I would like to acknowledge: my advisers, Brother Zacherson, Brother Hatt, and Brother Johnson for reading through this thesis, Brother Lines for his patience with me during this class, the mentorship of Dr. Tanaji Sen at Fermilab, and my patient husband for putting up with me. Contents Table of Contents vi List of Figures vii 1 Introduction1 2 Background4 2.1 Background of Channeling Radiation..................4 2.2 Classical Description of Channeling Radiation.............5 2.3 Equations of Motion...........................7 2.4 Quantum Description of Channeling Radiation.............8 2.5 Multiple Scattering............................9 3 Experimental Setup 10 4 Experimental Problem-Solving 12 4.1 Bremsstrahlung.............................
    [Show full text]
  • Study of Crystal Defects Using Ion Channelling and Channelling Radiation
    Bull. Mater. Sci., Vol. 10, Nos 1 & 2, March 1988, pp. 105 115. (((~3 Printed in India. Study of crystal defects using ion channelling and channelling radiation ANAND P PATHAK School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 134, India. Abstraet. The channelling technique to study crystal defects is described and its appli- cations to various kind of defects to study their atomistic nature have been reviewed.Special emphasis has been placed on the applications to extended defects like dislocations. Finally a related new technique being developed for the last few years, namely the channelling radiation technique has been discussed along with its applications to study the dislocations. Keywords. Defects;dislocations: channelling; channelling radiation. I. Introduction Unless special care is taken in the fabrication and growth of material crystals, defects of one kind or the other are always present in these crystals. These defects can be classified as point defects (like vacancies and interstitials), line defects (dislocations), planar defects (for example stacking faults, grain boundaries etc.) and volume defects (like voids, gas bubbles, precipitates, amorphous regions etc.). From the viewpoint of fundamentals of defects physics in solids as well as from the application point of view, it is very important to know the nature and concentration of the defects present in solids. For such investigations, apart from the well-established method of electron microscopy, several new techniques have recently been developed. These include channelling, Mossbauer effect, perturbed angular correlation, positron annihilation, infrared absorption, electron paramagnetic resonance etc. The main advantage of these new techniques is their capability to select a given type of defect and provide information on the atomistic nature of the chosen defect.
    [Show full text]
  • Bigger and More Absorbent
    Bottom, comparison of proton-proton and proton-antiproton total cross-sections (a measure of the effective 'size' of the colliding particles) with increasing energy. The point on the right comes from the UA4 experiment at the CERN Collider. Top, comparison of elastic to total cross-sections. Together these results show that at Collider energies the particles become both larger and more absorbent. be accessed indirectly at electron- positron machines. First results to emerge from the experiment (announced at this sum­ 0,24 mer's conferences) concern the so- called chi states, where the char- monium quarks, as well as having 0.22 angular momentum due to their aligned spins, also have mutual orbi­ tal angular momentum. This gives a 0.20 triplet of possible levels (chi 0, 1 and 2). 0.18 The chi 1's mass is found to be 3511 MeV, with a partial width for the proton-antiproton channel of just 0.16 62 eV, while the chi 2 is found at 3557 MeV, with a proton-antiproton width of 200 eV. The intrinsic accu­ PPPPc 65 A Ukh0V racy of this experiment is reflected in v • ™?iFNAL |refJ . 10 o ISR (1979) *' 11 its small errors, the possible vari­ • - ISR (R210) " 12 ation of the mass values being esti­ o • ISR (R211) » 13 m Th'is experiment (UAM mated as below 1 MeV. More data 60 from these and other charmonium states is being analysed. 55 Bigger and more absorbent 50F \ PP Elastic scattering, when particles 'bounce' off each other without 45h \ ! changing their form, gives important insights into particle behaviour.
    [Show full text]
  • Ion Beams and Channelling: the Early Days with Jak Kelly
    Journal and Proceedings of the Royal Society of New South Wales, vol. 146, nos. 449 & 450, pp. 110-115. ISSN 0035-9173/13/020110-6 Ion beams and channelling: the early days with Jak Kelly Jim S Williams* Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 * Corresponding author. E-mail: [email protected] Abstract This paper contains some personal perspectives of the lessons learnt during my PhD studies with Jak Kelly at UNSW. Jak was passionate about science, had boundless enthusiasm, was an eternal optimist, was an ‘ideas’ person and innovator, as well as a superb motivator for his students and co-workers. I owe him much for his impact on my career in science. Introduction There were four attributes of Jak that stood I first encountered Jak Kelly as an out during my PhD time: i) he was a undergraduate student at UNSW in the fantastic ‘ideas’ person but I learnt early that mid-1960s. He was clearly the most some filtering was necessary to give a reality enthusiastic and passionate lecturer in my check and pick those directions that were early undergraduate years. His lecturing feasible given our meagre resources at style was decidedly theatrical and UNSW; ii) he was an eternal optimist and compelling. It was not a surprise to me that always saw opportunity in adversity; iii) he his daughter Karina showed much of that was a fabulous motivator and his boundless style in her media successes years later. enthusiasm helped me face the most During my Physics Honours year I was daunting of problems with confidence; and called up for national service.
    [Show full text]
  • Low Dose X-Ray Radiation Source for Angiography Based on Channeling Radiation Principle
    Proceedings of LINAC2014, Geneva, Switzerland THPP103 LOW DOSE X-RAY RADIATION SOURCE FOR ANGIOGRAPHY BASED ON CHANNELING RADIATION PRINCIPLE T.V. Bondarenko, Yu.D. Klyuchevskaya, S.M. Polozov, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russia Abstract problem that results in rather high irradiation dose. Any solution to suppress it is strongly desirable. Angiography is one of the most reliable and contemporary procedure of the vascular system imaging. X-ray spectrums provided by all modern medical X-RAY SOURCE SCHEME angiographs are too broad to acquire high contrast images The monochromatic X-ray source based on the and provide low radiation dose at the same time. The new channelling radiation generated by the electrons moving method of narrow X-ray spectrum achieving is based on inside the oriented crystals is discussed [3]. The principal the idea of channelling radiation application. The X-ray scheme of the source is presented on the Figure 1. The filters used in this method allows eliminating the high electron beam (2) is generated in the electron source (1) energy part of the spectrum and providing dramatic dose and accelerated to ultra-relativistic energies in the LINAC reduction. The scheme of the facility including the X-ray (3) that is not considered in the work. After that electrons filter is discussed. The results of the spectrum analysis for pass through the aligned crystal (4) placed inside the the channelling radiation source are shown including the goniometer (12) and generated the monochromatic data for electron beam trajectories inside the diamond channeling X-ray radiation and broadband crystal investigation.
    [Show full text]
  • Ion Channelling and Electronic Excitations in Silicon
    Ion Channelling and Electronic Excitations in Silicon Anthony Craig Lim MSc Theory and Simulation of Materials, Imperial College London (2011), MSci Physics, Imperial College London (2010) CDT Theory and Simulations of Materials Physics Imperial College London South Kensington Campus, London, SW7 2AZ, United Kingdom THESIS Submitted for the degree of Doctor of Philosophy, Imperial College London 2014 2 The copyright of this thesis rests with the author and is made available under a Creative Commons Attribution Non-Commercial No Derivatives licence. Researchers are free to copy, distribute or transmit the thesis on the condition that they attribute it, that they do not use it for commercial purposes and that they do not alter, transform or build upon it. For any reuse or redistribution, researchers must make clear to others the licence terms of this work I, Anthony Lim, confirm that this thesis is my own work, unless stated otherwise. Where information is from other sources, I confirm that it has been indicated appropriately. 3 Abstract When a high-energy (MeV) atom or neutron collides with an atom in a solid, a region of radiation damage is formed. The intruding atom may cause a large number of atoms to leave their lattice sites with low energies (keV) in a collision cascade. Alternatively, it may cause a single lattice atom to be removed from its crystal lattice site and travel large distances without undergoing any further atomic collisions/scatterings in a process known as channelling. Any moving atom may lose energy via collisions with other atoms or by the excitation of electrons.
    [Show full text]
  • Antiprotons Could Help Fight Against Cancer
    NEWS BIOPHYSICS Antiprotons could help fight against cancer A pioneering experiment at CERN with 120 6 MV photons potential for cancer therapy has produced its 100 protons first results. Exploiting the unique capability 150 MeV antiprotons 80 of CERN’s Antiproton Decelerator to produce an antiproton beam at the right energy, 60 the Antiproton Cell Experiment (ACE) has dose (%) 40 shown that antiprotons are four times more 20 effective than protons for cell irradiation. 0 Cancer therapy is about collateral 0 2 4 6 8 10 12 14 16 18 20 damage: destroying the tumour while depth in water (cm) avoiding the healthy tissue around it. Physical dose deposition by X-rays, protons Unwanted exposure of healthy tissue and antiprotons, as calculated using the could cause side effects and result in a Monte Carlo simulation code FLUKA, clearly reduced quality of life. It is also believed to demonstrates the reduction of dose outside increase the chances of secondary cancers the target area for protons and antiprotons developing. In radiation therapy there is an Michael Holzscheiter, ACE spokesperson compared with X-rays. Antiprotons are ongoing quest to reduce the radiation level (left), retrieves an experimental sample also expected to enhance the biological to tissue outside the primary tumour volume. after irradiation with antiprotons, while effective dose in the Bragg peak, rendering In hadron therapy, which began in Niels Bassler (centre) and Helge Knudsen the difference between protons and 1946 with Robert Wilson’s seminal paper, from the University of Aarhus look on. antiprotons even more significant. “Radiological Use of Fast Protons”, the dose profile of heavy charged particles (hadrons) about a 2 cm range in water.
    [Show full text]
  • SUMMARY Hans-Otto Meyer, Indiana U • Cockcroft Institute • Programme
    SUMMARY Hans-Otto Meyer, Indiana U • Cockcroft Institute • www.cockcroft.ac.uk/Polanti-p Programme •Homeregister •organisation The workshop will last for 2½ days, organised as ten nominal 90 minute sessions starting at 09.00 on Wednesday 29 August and finishing at 12.30 on Friday 31 August. Other contributions may b •programmeincluded if time is available. •projectWednesday history 29 August Session 1 Introduction Physics with polarised antiprotons P. Lenisa An overview of the physics processes involved in spin transfer N. Buttimore Dynamics of polarisation build-up by spin filtering D. O’Brien Session 2 Spin filter and spin transfer theory I Spin filtering of stored protons (antiprotons) N. Nikolaev Polarisation build-up in stored proton and antiproton beams interacting with a polarised target V. Strakhovenko Session 3 Spin Filter and Spin Transfer Theory II Polarisation of antiprotons by means of spin-flip interaction with positrons Th. Walcher Proton and antiproton beam polarisation due to spin filtering V. Strakhovenko by a polarised hydrogen target Sessions 4 Discussion period I - Leader E. Leader Thursday 30 August Session 5 Further techniques Stern-Gerlach forces and spin splitters D. Barber Dynamic nuclear polarisation in flight A. Krisch Session 6 Storage rings Relevant storage ring properties and limitations A. Lehrach Spin dynamics and simulation of spin motion in storage rings D. Barber Session 7 Channelling techniques How a bent crystal could polarise antiprotons M.Ukhanov Experimental study of channelling phenomena M. Fiorini Session 8 Discussion period II - Leader E. Steffens Friday 31 August Session 9 Current and future experiments Depolarisation and spin filtering studies at COSY F.
    [Show full text]
  • Planar Channeling of 855 Mev Electrons in Silicon: Monte-Carlo
    Planar Channelling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations Andriy Kostyuk1, Andrei Korol1,2, Andrey Solov’yov1,3, and Walter Greiner1 1 Frankfurt Institute for Advanced Studies, Johann Wolfgang Goethe-Universit¨at, 60438 Frankfurt am Main, Germany 2 Department of Physics, St. Petersburg State Maritime Technical University, 198262 St. Petersburg, Russia 3 A.F. Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia Abstract. A new Monte Carlo code for the simulation of the channelling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First results obtained with the code for the channelling of 855 MeV electrons in Silicon crystal are presented. The dechannelling lengths for (100), (110) and (111) crystallographic planes are estimated. In order to verify the code, the dependence of the intensity of the channelling radiation on the crystal dimension along the beam direction is calculated. A good agreement of the obtained results with recent experimental data is observed. PACS numbers: 61.85.+p, 02.70.Uu, 41.75.Fr Submitted to: J. Phys. B: At. Mol. Opt. Phys. arXiv:1008.1707v3 [physics.acc-ph] 23 Sep 2017 Planar Channelling: Monte-Carlo Simulations 2 1. Introduction In this article we consider planar channelling of 855 MeV electrons in Silicon crystal using a new Monte-Carlo code. Channelling takes place if charged particles enter a single crystal at small angle with respect to crystallographic planes or axes [1]. The particles get confined by the interplanar or axial potential and move preferably along the corresponding crystallographic planes or axes following their shape.
    [Show full text]
  • Swift Highly Charged Ion Channelling
    Swift Highly Charged Ion Channelling Denis Dauvergne IPNL, Université de Lyon, Lyon, F-69003, France; Université Lyon 1 and IN2P3/CNRS, UMR 5822, 4 rue E. Fermi, F-69622 Villeurbanne Cedex, France. [email protected] Abstract . We review recent experimental and theoretical progress made in the scope of swift highly charged ion channelling in crystals. The usefulness of such studies is their ability to yield impact parameter information on charge transfer processes, and also on some time related problems. We discuss the cooling and heating phenomena at MeV/u energies, results obtained with decelerated H-like ion beams at GSI and with ions having an excess of electrons at GANIL, the superdensity effect along atomic strings and Resonant Coherent Excitation . 1. Ion Channelling – Interaction with a dense electron gas If an incident parallel ion beam has an orientation close to a major crystallographic direction of a crystal, then the ion flux is redistributed inside the target, below the surface: channelled ions undergo a series of correlated collisions at small angle along atomic strings or planes that repel them at large distances from the target atoms. The flux distribution of channelled positive particles is then characterized by a depletion of small impact parameters, and by a flux peaking near the centre of the axial or planar channels. This property has been widely used over the last 40 years to probe the structure of ordered matter, allowing lattice location of impurities, evidencing the nature of defects, providing information on surfaces and on strained epitaxial layers. It has also provided information on basic particle-matter interactions [1,2].
    [Show full text]
  • Channelling and Related Effects in Electron Microscopy: the Current Status
    Scanning Microscopy Volume 1990 Number 4 Fundamental Electron and Ion Beam Interactions with Solids for Microscopy, Article 11 Microanalysis, and Microlithography 1990 Channelling and Related Effects in Electron Microscopy: The Current Status Kannan M. Krishnan National Center for Electron Microscopy, Berkeley Follow this and additional works at: https://digitalcommons.usu.edu/microscopy Part of the Biology Commons Recommended Citation Krishnan, Kannan M. (1990) "Channelling and Related Effects in Electron Microscopy: The Current Status," Scanning Microscopy: Vol. 1990 : No. 4 , Article 11. Available at: https://digitalcommons.usu.edu/microscopy/vol1990/iss4/11 This Article is brought to you for free and open access by the Western Dairy Center at DigitalCommons@USU. It has been accepted for inclusion in Scanning Microscopy by an authorized administrator of DigitalCommons@USU. For more information, please contact [email protected]. Scanning Microscopy Supplement 4, 1990 (Pages 157-170) 0892-953X/90$3.00+ .00 Scanning Microscopy International, Chicago (AMF O'Hare), IL 60666 USA CHANNELLING AND RELATED EFFECTS IN ELECTRON MICROSCOPY: THE CURRENT STATUS Kannan M. Krishnan National Center for Electron Microscopy Materials and Chemicals Sciences Division Lawrence Berkeley Laboratory I Cyclotron Road Berkeley, CA 94 720 Telephone Number (415) 540-6421 Introduction The channelling or Borrmann effect in electron The motion of charged particles in monocrystalline solids diffraction has been developed into a versatile, high spatial is strongly
    [Show full text]