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arXiv:1405.4218v3 [cond-mat.mtrl-sci] 11 Sep 2014 inlyrpeetdb lc waves Bloch by represented tionally tutr fsld s rmtv ai o lc)represe Bloch) (or basis primitive tion. a use solids electroni the of majo on structure focus vast that the studies theoretical Therefore, existing of transitions. rules intraband selection an of and optical form inter- the periodic their in in imposed for vector properties consequences transport wave important defined well has the structures of Existence state. vector ufil h normalization the fulfills Bloch a B)srnsa euto h oeflig h eoeyof recovery the zone folding, Brillouin zone the the relation of Since dispersion result a a basis. primitive as shrinks a (BZ) of size great that the supercells ceed disordere of of construction Modeling requires structures [2]. semiconductors transition su indirect with optical erwise associated facilitate states can electronic impurities example, stitutional For const nominal [1]. their cies from pro different el strikingly of non- emergence are alter the that in ties in significantly resulting order solids can of long-range disorder structure of tronic The lack the solids. mag- even crystalline alloys, or fluctua compound defects, disorder in structural composition netic of chemical the form of the tions in disorder by turbed rlwih”[–] h pcrlweight spectral “spec- The a as known [5–7]. also weight” is which tral 4], [3, based density is spectral representation Bloch basis primitive the with structure non-trivial. comes ∗ [email protected] lcrnceeg iesae fproi oisaetradi are solids periodic of eigenstates energy Electronic nraiy h da rnltoa eidct fsld i solids of periodicity translational ideal the reality, In h otscesu prahta ik h uecl band supercell the links that approach successful most The k k eciigtetasainlproiiyo given a of periodicity translational the describing 4 caatro the of -character nttt o oi tt hsc,Ven nvriyo Tec of University Vienna Physics, State Solid for Institute 3 ASnmes 11.b 12.r 12.k 71.55.Eq 71.23.-k, 71.20.Nr, 71.15.Mb, numbers: PACS amb otherwise are tions. that alloys The of fermions. characteristics topologi Kane transport a high-mobility of and emergence GaAs:Bi, by dilute companied in enhancem anticrossing associated band solutions and valence Ga(PN) solid dilute semiconductor in II-VI states and donor-like III-V spectr group the of apply we ture Here disorder. calc by structure perturbed electronic eigenstates supercell of challenges main the eateto aeil cec n niern,McMaster Engineering, and Science Materials of Department 2 ueclsaeotnue in used often are Supercells eateto hsc,Lkha nvriy 5 lvrRoa Oliver 955 University, Lakehead Physics, of Department 1 hne a einlRsac nttt,90Oie od T Road, Oliver 980 Institute, Research Regional Bay Thunder .INTRODUCTION I. ǫ ( k ) ntemmnu-nrysaebe- space momentum-energy the in P n k .Rubel, O. t nryeigenstates energy ’th w rmbudsae ohg-oiiyKn fermions Kane high-mobility to states bound from nodn h adsrcueo iodrdsolids: disordered of structure band the Unfolding n ( k 1 = ) ψ ,2, 1, n, binitio ab w k ∗ o symmetric For . ( n r .Bokhanchuk, A. ( ) k ) ihawave a with mut to amounts acltost oe opudaly,srae n defect and surfaces alloys, compound model to calculations Dtd uut1,2018) 14, August (Dated: noth- in s ǫ band c n yex- ly ituen- dis- s na on per- nta- and rity ec- for b- d d - - 1 nlg,WenrHuttae81,14 ina Austria Vienna, 1040 8-10, Hauptstraße Wiedner hnology, .J Ahmed, J. S. ltosi orcvrteBohcaatro electronic of character Bloch the recover to is ulations gosi rdtoa rtpicpe uecl calcula- supercell first-principles traditional in iguous ihapriua lc aevco 2 ,1–1.Telat- implementatio The for straightforward 19–21]. solid-state most 7, in the [2, is vector approach wave associated ter Bloch groups ex- particular in Fourier a them the with gathering from by constructed waves plane coefficients be as pansion such can set, weight basis spectral non-local a orbitals the of case atomic orbi the local as In projected or [18]. such [10–17] functions Wannier functions, 9], 8, basis [6, local of formation iyfntoa hoywt h all-electron den- the of with framework theory semi the functional II-VI in and sity obtained III-V solutions group solid of structure conductor electronic the of ing packages. availabl full-potential or readily pseudopotential are in coefficients expansion (PW) wave plane ehta scmail ihtetasainlsmer of symmetry a translational with the space with reciprocal compatible is supercell that the mesh remapping on based li fundamental its approaches of uncertainty the states, ized ymty h nryegntt scaatrzdb broad- by characterized is of eigenstate ening energy the symmetry, tutrspoue yormethod. ba our unfolded by band the produced standard in structures in apparent identify become to features, calculations, difficult structure These related been have and fermions. would alloy which Kane compound ban high-mobility (HgCd)Te topological of bulk a formation a (iii) and in GaAs:Bi, crossover of valenc dilute the enhancement of in associated observation anticrossing direct and (ii) activity, GaP:N don optical of dilute its formation in (i) states investigate we like illustration, For [22]. nd i.e., fined, tutrs h lc aevector wave Bloch the structures, lwih praht nodn h lcrncstruc- electronic the unfolding to approach weight al n fisotclatvt,drc bevto fthe of observation direct activity, optical its of ent h lutaieeape nld:frainof formation include: examples illustrative The . h pcrlwih a eotie yaFuirtrans- Fourier a by obtained be can weight spectral The eew pl h seta egt praht unfold- to approach weight” “spectral the apply we Here u praht h aclto fteseta egtis weight spectral the of calculation the to approach Our a adcosvri enr HC)ealyac- alloy (HgCd)Te ternary in crossover band cal ∆ k nvriy aitn nai 848 Canada L8S4L8, Ontario Hamilton, University, nlssfclttsitrrtto fotcland optical of interpretation facilitates analysis ,TudrBy nai 7 E,Canada 5E1, P7B Ontario Bay, Thunder d, ∼ udrBy nai 7 V,Canada 6V4, P7B Ontario Bay, hunder r w B − w n 3 1 n ( where , n .Assmann E. and k ( I NODN PROCEDURE UNFOLDING II. binitio ab k ) nteutmt xrm fsailylocal- spatially of extreme ultimate the In . = ) δ r ( B k lcrncsrcuecds ic the since codes, structure electronic stelclzto radius. localization the is − k B 4 ) nsprel ihabroken a with supercells In . k B .Oeof One s. suabgosyde- unambiguously is Wien2k package band e tals mit or- nd d n e - , Physical Review B 90, 115202 (2014)

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FIG. 1. Relation between k-mesh in the reciprocal space for a square primitive lattice (a) and that for a 3 × 2 supercell (b). The ﬁrst BZ is outlined on both panels. The overlay of both patterns is shown on the panel (c). The overlapped points form a subgroup of K that represents the Bloch wave vector k. There is a total of 6 subgroups (3 × 2), which indicates that each K-point in the supercell bears information about 6 k-points of the primitive basis.

a primitive cell [2, 19, 23]. Here we briefly review the basics with mi = 0, 1,...Ni − 1 that extends up to the scaling fac- of this method. tor Ni used when constructing the supercell along i’s axis. The PW expansion alone This generates a multitude of “unfolded” Bloch wave vectors, each with its own subgroup of the PW expansion coefficients i(K+G)·r Ψn,K(r)= X Cn,K(G)e (1) Cn,K(k + g). Thus, the individual “weights” of unfolded k- G points are expressed in terms of the PW coefficients which belong to the subgroup of k or its combination with a local basis set (such as augmented plane-waves) is a popular choice for representing wave func- 2 tions in periodic solids. Here n refers to a particular eigenstate wn(k)= X |Cn,K(k + g)| . (5) (band index), K is the wave vector within the first BZ and C g are expansion coefficients. The summation runs over a set Note that the subgroups are formed by the translation vec- of K-points repeated with periodicity of the reciprocal lattice tors g, not G. In order to facilitate the mapping, the supercell vectors G1, G2 and G3. The plane wave cut-off Gmax de- needs to be generated by translation of the primitive cell along termines the range of the summation and, therefore, the com- its lattice vectors in real space, which implies a simple rela- pleteness of the basis set. The general form of expansion (1) tion between the reciprocal lattice vectors gi = miGi. If is identical irrespective of whether a supercell or a primitive latter is not the case, an additional coordinate transformation cell basis is used. We will employ upper-case and lower-case (miGi → gi) is required for the resultant wave vectors k notations in order to distinguish between these two cases, re- given by Eq. (4). spectively. Figure 1 (a,b) illustrates the reciprocal space mesh in two dimensions for a primitive cubic lattice and its supercell of III. APPLICATIONS the size 3 × 2. Each point on this mesh is associated with an individual PW, and can be assigned a relative “weight” 2 A. DiluteGaP:N of |Cn,K(G)| . When the two meshes corresponding to the primitive cell and supercell overlay as shown in Fig. 1(c), it is possible to match the supercell K and the primitive Bloch Group III-V dilute nitride semiconductors continue to be wave k PW expansion coefficients in the focus since the 1990’s as a material system for long- wavelength telecommunication and photovoltaic applications Cn,K(G) → cn,k(g) (2) [24, 25]. In spite of the fact that nitrides (GaN and AlN) are wide-bandgap semiconductors, addition of a small fraction of at the points which fulfill nitrogen (a few percent) in the host III-V semiconductors, e.g. GaAs, results in a drastic reduction of their energy gap. This K + G = k + g . (3) narrowing of the band gap is attributed to an anticrossing be- As can be seen in Fig. 1(c), any K-point transforms into tween extended states of the host conduction band and the localized nitrogen resonant states [26]. N1N2N3 k-points in the first primitive BZ under the translation Ga(NP) was a progenitor of modern dilute nitrides [28]. It was shown that nitrogen and its complexes behave in GaP k = K + m1G1 + m2G2 + m3G3 (4) as isoelectronic traps by creating a tail of localized states in

Page 2 of 8 Physical Review B 90, 115202 (2014)

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FIG. 2. Band structure of GaP: 2-atoms primitive unit cell (a) and 16-atoms 2×2×2 supercell (b). The supercell band structure is “obfuscated” due to the zone folding. Fat bands on panel (b) illustrate the unfolded band structure where the symbols size and color represent the Bloch spectral weight. Both cells have the Brillouin zone shown on panel (c). Here and in all ﬁgures hereafter the Fermi energy is set to zero.

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FIG. 3. Band structure of Ga64P64 (a) and Ga64N1P63 (b, c) supercell unfolded to the primitive Bloch representation. A very weak signature of a nitrogen-related conduction band can be seen within the GaP energy gap (b). Panel (c) shows a snapshot of Ga64N1P63 conduction band with the contrast artiﬁcially enhanced by using a non-linear (square root) intensity scale. The nitrogen band introduces a direct optical transition (b) thereby stimulating radiative optical transitions in Ga(NP) [27]. the vicinity of the conduction band edge [29]. The nitrogen- Ga(NP), which will be used as a benchmark in order to prove related states facilitate radiative recombination of optical ex- the validity of the proposed method. citations, which is otherwise suppressed due to the indirect The band structure of GaP is presented in Fig. 2(a). (Com- band structure of GaP [27]. However, it should be noted that putational details are provided in the Appendix.) The calcu- disorder also introduces non-radiative channels that have an lated band structure reproduces experimental features of the adverse effect on the internal quantum efﬁciency of light- GaP band structure, namely, the indirect band gap with the emitting devices [30, 31]. These are the main features of conduction band minimum along ∆-path near X-point fol-

Page 3 of 8 Physical Review B 90, 115202 (2014) lowed by L and Γ valleys in the direction of increasing the ment of an effective Hamiltonian, which incorporates effects electron energy (see Ref. 32, pp. 198-199). Our calculations of compositional disorder, based on first-principles Wannier do not purport to reproduce an experimental value of the band functions [13] is an efficient technique that enables to over- gap in GaP. The calculated energy gap of GaP is only about come this limitation. Furthermore, the configurational aver- 60% of its experimental value, which is due to a shortcom- aging can be expedited by constructing special quasirandom ing of the density functional theory (DFT) in its Kohn-Sham structures with relevant radial correlation functions tailored to formulation [33]. This drawback is not critical for the pur- match a perfectly random structure [37]. pose of our study since qualitative prediction of the optical emission spectrum is beyond the scope of our work. Next, we repeat the band structure calculation for a 16-atoms supercell of GaP. Results are presented in Fig. 2(b), which exempli- fies a zone folding that hinders analysis of the band structure of supercells. Even for such a comparatively small supercell B. DiluteGaAs:Bi (2 × 2 × 2), the direct or indirect character of the band gap is obscured. The above example of Ga(NP) shows that incorporation of Now we apply the procedure described in Sec. II in the at- nitrogen is responsible for the modulation of the conduction tempt to recover the GaP band structure in its conventional band in the host semiconductor. Alloying of GaAs with bis- Bloch representation from a 128-atom supercell. The un- muth has been proposed as a complementary approach for en- folded band structure is shown in Fig. 3(a) and can be directly gineering of the valence band [38]. Reduction of the band compared to that in Fig. 2(a), including the indirect band gap gap in Ga(AsBi) is explained using a semi-empirical valence and ordering of valleys in the conduction band. It is important band anticrossing model [39]. The model is similar in spirit to note that all points are sharp within the limit of a Gaussian to the band anticrossing of dilute nitrides [26]. Recent elec- smearing applied. This feature is inherent to Bloch states with tronic structure calculations of GaAs1−xBix [40] performed a well defined wave vector k, as anticipated for a structure in beyond the popular band anticrossing model provide impor- the absence of a disorder. The brightness of the spots is deter- tant insight to the structure of the valence band. However, the mined by the magnitude of the corresponding Bloch character valuable link between electronic eigenstates of the alloy and as well as by the degeneracy. The distinct brightness of the their dispersion characteristics is overlooked in this analysis. valence and conduction bands in Fig. 3(a) is due to a degen- This relation can be recovered using the unfolding procedure. eracy of the corresponding eigenvalues. This band structure will be used as a reference when studying effects of disorder. The band structures of GaAs and Ga64As63Bi1 are shown The symmetry of GaP supercell is then disturbed by in- in Fig. 4. Their comparison allows us to draw the following troducing nitrogen as an isoelectronic substitutional impu- conclusions: (i) incorporation of Bi in GaAs mostly affects the valence band, (ii) no bound states are found above the va- rity. The unfolded band structure of Ga64N1P63 is shown in Fig. 3(b). Nitrogen incorporation results in the emergence lence band edge of the host GaAs, (iii) the energy gap shrinks of a new band beneath the host conduction band of GaP. At along with enhancement of the spin-orbit splitting. These fea- the same time, the valence band remains almost unperturbed. tures are consistent with the experimental trends [39] and pre- The nitrogen-related states are better seen in Fig. 3(c) where diction from first-principles of bismuth-related signatures of the conduction band region is shown with enhanced contrast. localization beneath the host valence band maximum [40]. Contrary to the extended states of GaP, the nitrogen states do Finally, we would like to emphasize a fundamental differ- not have a well defined k and they are only weakly present ence between GaAs1−xBix and the majority of other group at the Γ-point. These results are consistent with the localized III-V ternary semiconductors, including GaAs1−xSbx alloy. nature of nitrogen states in GaP and confirm their role as re- GaBi is a metal with an anomalous order of bands [41], which combination centers for optical excitations, albeit slow and is reminiscent of the better known α-Sn with a band inver- inefficient [29, 34]. sion or negative band gap caused by spin-orbit effects [42]. The intrinsic limitations of dilute Ga(NP) stimulated ex- Thus, the electronic structures of GaAs and GaBi have dif- ploration of alternative materials for room-temperature opti- ferent topology, which is not the case in GaAs-GaSb, for in- cal emitters. Ga(NAsP) is one of the recent developments in stance. The electronic structure of GaAs1−xBix cannot evolve the family of dilute nitrides that holds promise for the realiza- “smoothly” in the range 0

Page 4 of 8 Physical Review B 90, 115202 (2014)

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C. (HgCd)Te alloy compared to their experimental values of 1.65 and −0.3 eV [48]. It is interesting that LDA-mBJ accurately reproduces not only the energy gap for insulators, but also performs well for Hg − Cd Te (HCT) is an example of a material system 1 x x semimetals. Without mBJ potential, the LDA results for the with the topological band inversion [44], which is similar to band gap in CdTe and HgTe are 0.3 and −0.8 eV. The Kane GaAs − Bi discussed in the preceding Sec. IIIB. The ar- 1 x x fermions can still be observed, but the critical concentration is rangement of bands in binary HgTe and CdTe as well as their heavily shifted towards Cd-rich composition x ≈ 0.8. symmetry are shown at Fig. 5(a). The conduction band mini- c Further increase of the cadmium content beyond x leads to mum and the valence band maximum of CdTe have and c Γ6 a narrow-gap semiconductor with a highly non-parabolic con- Γ symmetries, respectively. In HgTe, the order of bands 8 duction band (compare Figs. 6c and 6d). Apparently, there is inverted due to a strong spin-orbit interaction [45]. The is no ambiguity in the Bloch character for all states near the crossover between the Γ6 and Γ8 bands is inevitable in the Fermi energy irrespective of the Hg − Cd Te composition course of a gradual change in the composition of ternary 1 x x (Fig. 6). This result indicates that charge transport character- Hg − Cd Te alloy as illustrated by dashed lines in Fig. 5(a). 1 x x istics of HCT do not degrade as a result of the alloy scattering The prominent feature of HCT is the presence of massless as dramatically as in dilute nitride semiconductors [50]. Our Kane fermions [46] at the crossover composition (Fig. 5b), results explain the previously established experimental facts whose experimental observation was recently reported by Or- for HCT, such as the exceptional electron mobility exceeding lita et al. [47]. − − 105 cm2V 1s 1 at low temperature [51] with its maximum − − The evolution of the Hg1−xCdxTe band structure as a func- value of ∼ 106 cm2V 1s 1 at the composition that corre- tion of composition is shown in Fig. 6. The composition range sponds the topological band crossover [52]. was chosen to cover the transition from a semimetal with a There are two arguments why the disorder has such a mild negative band gap to an insulator. The negative gap grad- effect on the band structure of Hg1−xCdxTe. First, Hg and ually shrinks with increasing the Cd content (Fig. 6a) until Cd have almost the identical atomic radii that results in no three-fold degeneracy is established at a critical composition local lattice distortions when one element is interchanged by (Fig. 6b). At this composition, the light hole and electron the other. Second, both elements have almost identical the masses vanish near Γ as it is evident from the conical shape of energy level of their valence s and p electrons which leads their dispersion. Orlita et al. [47] stressed that Kane fermions to comparable electronegativity of the two elements. None are not protected by symmetry, unlike Dirac fermions. The of these conditions apply to Ga(PN) or Ga(AsBi) alloys. As a emergence of Kane fermions corresponds to a critical chem- result, their band structure is heavily perturbedby the disorder. ical composition xc. The critical composition is sensitive to extrinsic factors, such as temperature, pressure. The band structure calculations yield the critical cadmium IV. CONCLUSIONS content of xc ≈ 0.19 ± 0.04 vs. 0.15 ... 0.17 observed experimentally [48]. The modest level of discrepancy is largely Effects of alloying on the electronic structure of Ga(NP), due to success of the Tran-Blaha modiﬁed Becke and John- Ga(AsBi) and (HgCd)Te were studied from ﬁrst principles. son (mBJ) exchange potential [49] in correcting the energy Particular emphasis was placed on the Bloch character of the gap error introduced in regular LDA (local density approxi- energy bands, which is evaluated using a Bloch spectral func- mation) calculations. The LDA-mBJ values of the band gap tion technique specially tailored to the density functional full- in binary CdTe and HgTe are 1.56 and −0.25 eV, respectively, potential package Wien2k. The success of the theory in

Page 5 of 8 Physical Review B 90, 115202 (2014)

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FIG. 5. Band order and symmetry labels for HgTe and CdTe compounds (a). These two compounds exhibit a band inversion (Γ6 ↔ Γ8) and, thus, have different “topology”. As the composition Hg1−xCdxTe varies between two binary compounds, a topological band crossover occurs. The crossover takes place near xc ≈ 0.19 and is accompanied by emergence of massless Kane fermions at the Γ-point (b). Regions of the band structure perturbed by disorder are labeled with arrows. The disorder affects only the electronic states located 1 − 3 eV above and below the Fermi energy.

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FIG. 6. Evolution of the band structure in ternary (HgCd)Te alloy near the Γ-point as a function of the chemical composition: Hg25Cd2Te27 (a), Hg22Cd5Te27 (b), Hg20Cd7Te27 (c), Hg5Cd22Te27 (d). The transition from a semimetal (a) to an insulator (c,d) occurs by passing through a Kane point (b). The nearly linear dispersion E ∝ |k|, which is characteristic of the Kane point, persists in the conduction band after opening of the band gap (c). predicting chemical trends is validated by reproducing well- be reduced as the bismuth content grows. This trend is com- known properties of dilute GaP:N. The calculations yield a mon to all compound alloys that combine a semiconductor nitrogen-related band near the bottom of the host GaP con- and a semimetal with the topological band inversion. duction band. A simultaneous enhancement of the optical activity observed in GaP:N is attributed to a weak Γ-character of nitrogen-related states within the band gap of GaP. In contrast to the role of nitrogen, incorporation of bismuth A topological band crossover was illustrated by the ex- in GaAs leads to perturbationsin the valence band without any ample of a bulk ternary (HgCd)Te alloy, which manifests in noticeable degradation of the conduction band. The valence the formation of high-mobility Kane fermions previously re- band dispersion in the energy range of 0 ... 0.6 eV below the ported experimentally. The massless dispersion develops at Fermi energy is signiﬁcantly affected by disorder. Uncertain- the composition that corresponds to the semimetal-insulator ties in the Bloch character of those states indicate the lost ap- transition. In contrary to Ga(NP) and Ga(AsBi), the composi- proximate translational symmetry of the host GaAs. Based tional disorder practically does not disturb the bottom of con- on the analogy between GaAs-GaBi and CdTe-HgTe material duction band and the top of valence band in (HgCd)Te, which systems, it is anticipated that the electron effective mass will translates to its exceptional charge transport characteristics.

Page 6 of 8 Physical Review B 90, 115202 (2014)

TABLE I. Calculation parameters for the compounds studied.

Parameters GaP:N GaAs:Bi Hg27−xCdxTe27 a a0 (A)˚ 5.41 5.61 6.41 Supercell size 4 × 4 × 4 4 × 4 × 4 3 × 3 × 3 Number of atoms 128 128 54 1.93 (Ga) 2.17 (Ga) 2.50 (Hg) Mufﬁn tin radii RMT (Bohr) 1.93 (P) 2.06 (As) 2.50 (Cd) 1.60 (N) 2.28 (Bi) 2.49 (Te) 3d104s24p1 (Ga) 3d104s24p1 (Ga) 5p65d106s2 (Hg) Valence electrons 3s23p3 (P) 3d104s24p3 (As) 4p64d105s2 (Cd) 2s22p3 (N) 5d106s26p3 (Bi) 4d105s25p4 (Te) Optimization of atomic positions yes yes nob Reciprocal k-mesh 2 × 2 × 2 2 × 2 × 2 3 × 3 × 3 MT RminKmax 7 7 6 Spin-orbit coupling no yes yes Direction of magnetization · · · [001] [001] mBJ potential no yes yes

a The binary average value of a0 is used throughout the calculations due to a minor difference (less that 1%) in the unit cell volume between HgTe and CdTe. b Forces did not exceed 2 mRy/Bohr.

ACKNOWLEDGMENTS density approximation [53] has been used for the exchange correlation functional. The Tran-Blaha modified Becke and Authors are indebted to Profs. Marek Niewczas and Pe- Johnson (mBJ) potential [49] was applied to GaAs:Bi and ter Blaha for stimulating discussions and critical reading of (HgCd)Te compounds in order to improve their band gaps. MT the manuscript. OR and SJA would like to acknowledge fund- Sampling of the Brillouin zone, muffin tin radii R , the prod- MT ing provided by the Natural Sciences and Engineering Re- uct RminKmax, which determines the accuracy of a plane wave search Council of Canada under the Discovery Grant Program expansionof the wave function, and other parameters are sum- 386018-2010; EA acknowledges the support from a “Vienna marized in Table I. University of Technology innovative project grant”. The supercells were built on the basis of primitive cells in- stead of conventional ones. The self-consistent lattice constants a0 of binary hosts were used in the calculations (Ta- Appendix: Computational details ble I). Where indicated, the internal degrees of freedom were relaxed by minimizing Hellmann-Feynman forces acting on The first-principles calculations were carried out using den- atoms below 2 mRy/Bohr. Calculations of the spectral weight sity functional theory and the linear augmented plane wave were performed using fold2Bloch package, which is avail- method implemented in the Wien2k package [22]. The local able from GitHub.

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