Insulating Phase of a Two-Dimensional Electron
Challenges and opportunities of ZnO-related single crystalline heterostructures Y. Kozuka1, A. Tsukazaki2,3, M. Kawasaki1,4,a) 1Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan 2Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan 3PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075, Japan 4 RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan Abstract Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy (MBE) and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with MgxZn1-xO. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such as a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make MgxZn1-xO as intrinsic as possible has opened the possibilities of making p-type MgxZn1-xO through NH3 doping method. For the latter, conducting and transparent polymer films spin-coated on MgxZn1-xO was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content.
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