Background Statement for SEMI Draft Document 5117A

Background Statement for SEMI Draft Document 5117A REVISION TO SEMI MS2-1109, TEST METHOD FOR STEP-HEIGHT MEASUREMENTS OF THIN FILMS

Note: This background statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this document.

Note: Recipients of this document are invited to submit, with their comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.

Background SEMI MS2-1109 enables the determination of step height measurements of thin films. Step height measurements can be used to determine thin film thickness values. Thickness measurements are an aid in the design and fabrication of MEMS devices and can be used to obtain thin film material parameters, such as Young’s modulus.

SEMI MS2 became publicly available in March of 2007 without precision and bias data. The MEMS Young’s Modulus and Step Height Round Robin Experiment was held from December 2008 through April 2009. The SEMI MS2 standard was revised to include the round robin precision and bias data and was published in November 2009 after a successful reballot.

Standard reference materials (SRM 2494 and SRM 2495) are being developed to aid customer’s in their use of five documentary standard test methods (including SEMI MS2). During the review process of the standard reference materials, most sections of this test method were modified as reflected by the changes in this SEMI Document 5117, resulting in what can be considered a complete rewrite of this test method. Of particular note is the following: 1. Those definitions obtained from ASTM are modified, 2. The calibration procedure is updated and is similar to that used in draft Test Methods E 2244, E 2245, and E 2246 that are being balloted in ASTM, 3. Improved the round robin tables, and 4. The combined standard uncertainty equation is modified to include the incorporation of two additional uncertainty components in the combined standard uncertainty equation and added Table A1-1 to facilitate the understanding of this equation. This SEMI Document 5117A is now being balloted and the complete set of changes can be seen in the redlined version of this document. SEMI Document 5117A was approved for letter balloting in July 2011. Review and Adjudication Information Task Force Review Committee Adjudication Group: MEMS Materials Characterization TF NA MEMS / NEMS Committee Date: Monday, October 24, 2011 Monday, October 24, 2011 Time & Timezone: 1:30 PM to 2:30 PM, Pacific Time 3:00 PM to 5:00 PM, Pacific Time Location: SEMI Headquarters SEMI Headquarters 3081 Zanker Road 3081 Zanker Road City, State/Country: San Jose, CA San Jose, CA Leader(s): Janet Cassard (NIST, [email protected]) Mark Crocket (MEMSMART, [email protected]) Win Baylies (BayTech Group, [email protected]) Standards Staff: Paul Trio (SEMI NA) Paul Trio (SEMI NA) 408.943.7041 /[email protected] 408.943.7041 / [email protected] This meeting’s details are subject to change, and additional review sessions may be scheduled if necessary. Contact the task force leaders or Standards staff for confirmation.

Telephone and web information will be distributed to interested parties as the meeting date approaches. If you will not be able to attend these meetings in person but would like to participate by telephone/web, please contact Standards staff. Informational (Blue) Ballot1000AInformational (Blue) Ballot Ballot1000AInformational (Blue) (Blue) Informational Phone: 408.943.6900, Fax:408.943.6900, Phone:408.943.7943 CASan 95134-2127 Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and layers are assumed to have a uniform thickness across the chip and, as such, do not enter into the calculations. This post- This 4 calculations. the into enter not do such, as and, chip the across thickness is processing considered the of testoutside scope this method. uniform a have to assumed are layers additional These measurements. gold interferometric the accurate enabling for surface layer reflective smooth, adhesion a an provides coverage as gold serves the while chromium The surface. top the on deposited be can gold of nm 150 approximately by 1: NOTE 3.1 3 the determine and practices health and safety appropriate other ofprior limitations use.applicability regulatoryor to establish to standard this of users the of responsibility NOTICE: interferometer optical data 2-D traces. the capability with oftopographical instrument obtaining an be can using which materials, imaged (MEMS) system microelectromechanical accurately in found those as such films, to only applies It 2.1 2 measurements Thickness values. thickness film thin as parameters, Young’s canusedthin obtain such MEMSto material modulus. and be film fabrication of devices determine to used be can 1.1 1 NOTICE: THIN MEASUREMENTSFILMS OF SEMIMS2-1109, TESTFOR STEP-HEIGHT TO METHOD REVISION Draft Document SEMI 5117A emsin i rne t erdc ado itiue hs dcmn, i woe r i pr, ny wti h soe f EI nentoa Sadrs cmite (document committee Standards International SEMI of scope the within only part, in or whole in document, Guideline. this Safety or distribute Standard adopted or and/or official reproductiondevelopment) All and/oractivity. other theprior withoutconsent distribution SEMI written prohibited.ofis an reproduce as construed be to to is granted page this is on material No Permission program. Standards International SEMI the of Document Draft a is This Fax: 610.832.9555; 610.832.9585; 3 Test MEMS Structures,” Processes using Beams,” 2 Polysilicon Processes,” MEMS in Micromechanical Thickness Systems Layer Measuring for of Technique Optomechanical “New Measurements C., J. Marshall, Property “Material D., in MEMS,” and Structure Nonidealities Test Properties S. Material Determine to Microcantilevers Actuated Senturia, of “Interferometry A., D. LaVan, and F., Bitsie, D., N. Masters, P., M. and Boer, de D., B. Jensen, M., P. Osterberg, in Micromachining II and Metrology Microlithography K., R. Gupta, J.NIST Res 1 an Using Films Reflecting Thin, of Measurements Strain Residual InterferometerOptical for Method Test Standard — E2245 ASTM an Using Films Reflecting Thin, of Measurements Length InterferometerOptical In-Plane for Method Test Standard — E2244 ASTM 4.2 Resonance Beamsin of Frequency the on Based Films Reflecting Thin, of Measurements Modulus Young’s for Method Test — MS4 SEMI 4.1

American Society for Testing and Materials,Drive, 100 Barr forHarbor West Society Pennsylvania and Conshohocken, Testing USA. Telephone: American 19428-2959, Vernier, J. L., C., D. P. in D. Standard Herman, Marshall, Gaitan, DeVoe, T., M.,Measurements ICCMOS “Young’s and L. Modulus Referenced Standards Referenced Documents and Limitations Scope Purpose Marshall, J. C., and Vernier, P. T., “Electro-Physical Technique for Post-Fabrication Measurements of CMOS Process Layer Thicknesses,” Layer Process CMOS of Measurements Post-Fabrication for Technique “Electro-Physical T., P. Vernier, and C., J. Marshall, For optical interferometry, all platforms involved in step height measurements mustreflective. platformsstepmeasurements all height in involved be For opticalinterferometry, structures. test height step using films thin of heights step measuring for procedure a presents method test This of stepmeasurements height thinmeasurements the height determination Step enables of method test films. This ASTM SEMI , Vol 10(March pp.153–157. 2001): ., Vol.5(2007): 112,No. pp.223–256.

Standard the is It use. its with associated any, if issues, safety address to purport not does standard This Standards This document was completely rewritten in 2009. completelyin rewritten documentThis was If in doubt as to whether or not the platforms are sufficiently reflective, approximately 8 nm of chromium followed chromium of nm 8 approximately reflective, sufficiently are platforms the not or whether to as doubt in If 3 http://www.astm.org IEEE Electron Device Letters IEEE Electron , SPIE,14-15, Volpp.39–45. 2880(October 1996): Journal of Microelectromechanical Systems ofJournal Microelectromechanical as ald a nefrmti microscope) interferometric an called (also Page , Vol. 28, No. 11 (2007): pp.960–963. , Vol.11(2007): 28,No. jn l jn 3 , Vol 10 (September 2001): pp.336–346. 2001): , Vol 10(September 1

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LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000AInformational (Blue) Ballot Ballot1000AInformational (Blue) (Blue) Informational Phone: 408.943.6900, Fax:408.943.6900, Phone:408.943.7943 CASan 95134-2127 Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and sufficiently reflective for optical interferometry, a smooth reflective layer can be deposited on the test structure before the before 8.1.2 structure test the on deposited be can layer reflective smooth taken.measurements See are Note 1. a interferometry, optical for reflective sufficiently 12: NOTE layer. topmost the as m2) (or metal2 shows it and 4a Figure in shown structure test height step the of section cross a is 4b Figure reflective). is (which metal exposed be to designed typically is layer top the process, CMOS a For reflective. 8.1.1.7 edges.coincident platforms the between edge designated layers pertinent the designing consider rules, design no are there If rules. design the 8.1.1.6 be to doubled. may need dimensions these measurements, stylus For edges. transitional nearby from disturbances include not do that and height platform the of representative are that trace) data 2-D each (along obtained edges be can transitional points data of nearby number sufficient from a (b) and disturbances processing any without steps) multiple with structure test height step be can measurements height by given (as platform made representative for traces data 2-D sufficiently-separated three, (a) that such 50 and structure test height 8.1.1.5 directions.) testfrom a to these rotationof byinstance the structure 30degrees chip’s the in oriented are 1–4 Figures in shown structures test height step the in steps or step (The application. intended for the variations width and length the characterize with fully consistent more to chip order the in measurement, on this direction of results a the in of use structure intended test height step the in step the orient to step), the of width 8.1.1.4 nexteachother. right to designed 8.1.1.3 emsin i rne t erdc ado itiue hs dcmn, i woe r i pr, ny wti h soe f EI nentoa Sadrs cmite (document committee Standards International SEMI of scope the within only part, in or whole in document, Guideline. this Safety or distribute Standard adopted or and/or official reproductiondevelopment) All and/oractivity. other theprior withoutconsent distribution SEMI written prohibited.ofis an reproduce as construed be to to is granted page this is on material No Permission program. 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Repeatability Data Repeatability Marshall, J., Allen, R. J.,McGray,D., Allen, A., J., Geist, Marshall, C. and from each of the four test structures in each of the three quads with one step height measurement being defined quads the one three as testwith being stepmeasurement the height four from eachof in eachof structures Precisionand Bias the average of three measurements taken from different positions spacedalong the somewhatstep as from evenly different of taken measurements the average three . The Reproducibility Data Reproducibility The Data Repeatability The Robin Round The Res If two step height test structures areused structures twosteptest height If Since it can be assumed that the estimated values of the uncertainty components are are components uncertainty the of values estimated the that assumed be can it Since . , Vol. 5,p 115,No. tnadstandard k , and using test chips fabricated in a bulk-micromachining bulk-micromachining a in fabricated chips test using and , =1) representing a level of representingcon a=1) level calculated in ¶ 11.2.1. Therefore, 48 step height measurements were 48step measurements height obtained. ¶calculated in 11.2.1. Therefore, — At one laboratory using laboratory optical — Atone an uncertainty — SEMI conducted a MEMS Young’s Modulus and Step Height Round Robin Experiment Robin Round Height Step and Modulus Young’s MEMS a conducted SEMI — p . 303-342, 2010. — At one laboratory using an optical optical an using laboratory one At — — Each — Each deviation

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LETTER (YELLOW) BALLOT