NCTU NFC HDP RIE Operation Manual

NCTU NFC HDP RIE Operation Manual Revised Nov. 2010.  Permitted material to be etched and restrictions 1. Wafer size: 4 inch. 2. Materials allowed to be etched: (1) Si series：c-Si、a-Si、poly-Si (2) SiO2 series：FSG、BSG、PSG、ASG、BPSG、SOG (3) Al series：Al、Al-Si、Al-Si-Cu(Cu<4%)、Al-Cu(Cu<4%) (4) SiNx、SiCx (5) Ti、TiN、TiSix、TiSixNy (6) Ta、TaN、TaSix、TaSixNy (7) W、WN、WSix、WSixNy (8) Mo、MoN、MoSix、MoSixNy (9) Pt、PtSix (10) Hf-based oxide (11) Zr-based oxide (12) Al-based oxide (13) GaN、Cr

3. This tool does not accept the following materials:

Cu、Au、Ag、Fe、Ni、Zn、LiNbO3. 4. No glass substrate.

 Note

1. Please specify the type of substrate and material composition (SiO2, Si3N4, metal, photo-resist, etc). Also please clarify if prior cleaning is needed. 2. For those who want to etch pieces, please firmly attach the sample onto a carrier wafer using vacuum tape. 3. Standard recipe will be used unless there is any special request. 4. RF time cannot exceed 10 min for each session. Multiple sessions should be utilized if RF time is longer than 10 min. 5. After tool qualification, the qualified user must operate the tool for five times and acquire the relevant signature before being permitted to operate the tool during after hours. Operation Procedures

Tool inspection →Switching on→Start up→ processing→ 2nd chamber clean and shutting down

A. Tool inspection 1. Check if there is any announcement regarding maintenance of systems of water, power, gas and air conditioning. 2. Check if the exhaust piping system is running properly. 3. Check the record sheet. 4. Check the status of tool (status card should be green color). 5. Check the level of cooling water.

B. Switching on 1. Switch on the cooling water. Start with outlet then inlet. 2. Turn on the computer. (if it is on already, go to step 3) 3. Turn on the monitor 4. Launch the software. 5. Scan the access card and then enter the password. 6. Enter username-NCTU and password-NCTU. Hit “Login” to sign in. 7. Modify the relevant process parameters. 8. Hit “power on”. 9. On the power on page, starting from the top, switch on the powers of dry pump, turbo pump, ICP RF, Bias RF, APC and chiller in sequence.

C. Start up 1. Hit “Auto Operation Mode” 2. On the page of Auto Operation Mode, hit “start up”. Dry pump will start to work and turbo pump to accelerate. ※ Please note if there is any unusual alarm when dry pump is working. ※ After start up is finished, do not hit “exit” to escape the page of Auto Operation Mode. (Please complete parameter modification before start up is finished)

D. Processing 1. Make sure start up procedures are correctly performed. 2. Open the chamber cover and load the sample. 3. Adjust the position of O-ring. 4. Close the chamber cover. 5. Switch on the 2nd disk of necessary gas. 6. Load the recipe. 7. Hit “reaction” to start the processing. 8. After the process is done, open the chamber cover and retrieve the sample. 9. Please repeat step 2~8 for the next session.

E. 2nd chamber clean and shutting down 1. Load the sample. 2. Hit “shutdown” to start cleaning and purging. 3. After cleaning and purging are done, and turn pump stops working, hit “exit” to escape the page of auto operation mode. 4. On the page of power on, starting from the top, switch off the powers of dry pump, turbo pump, ICP RF, Bias RF, APC and chiller in sequence. 5. Hit “exit” to escape the page of power on. 6. Scan the card and sign out. 7. Hit “Logout” to exit the software. 8. Turn off the monitor. 9. Switch off the cooling water. Start with inlet then outlet. 10. Confirm if cooling water is in “OFF” state. If not, go to the “Power On” page of control software to set the Chiller Power in OFF state. 11. Fill out the record sheet.