Phosphorene: Fabrication, Properties and Applications
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Electronic Structure of Graphene– and BN–Supported Phosphorene
This document is downloaded from DR‑NTU (https://dr.ntu.edu.sg) Nanyang Technological University, Singapore. Electronic structure of graphene– and BN–supported phosphorene Kistanov, Andrey A.; Saadatmand, Danial; Dmitriev, Sergey V.; Zhou, Kun; Korznikova, Elena A.; Davletshin, Artur R.; Ustiuzhanina, Svetlana V. 2018 Davletshin, A. R., Ustiuzhanina, S. V., Kistanov, A. A., Saadatmand, D., Dmitriev, S. V., Zhou, K., & Korznikova, E. A. (2018). Electronic structure of graphene– and BN–supported phosphorene. Physica B: Condensed Matter, 534, 63‑67. doi:10.1016/j.physb.2018.01.039 https://hdl.handle.net/10356/90092 https://doi.org/10.1016/j.physb.2018.01.039 © 2018 Elsevier B.V. All rights reserved. This paper was published in Physica B: Condensed Matter and is made available with permission of Elsevier B.V. Downloaded on 02 Oct 2021 11:03:45 SGT Electronic structure of graphene– and BN–supported phosphorene Artur R. Davletshin1, Svetlana V. Ustiuzhanina2, *Andrey A. Kistanov2, 3 , 4, Danial Saadatmand5, Sergey V. Dmitriev2, 6, Kun Zhou3 and Elena A. Korznikova2 1Ufa State Petroleum Technological University, Ufa 450000, Russia 2Institute for Metals Superplasticity Problems, Russian Academy of Sciences, Ufa 450001, Russia 3School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore 4Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore 138632, Singapore 5Department of Physics, University of Sistan and Baluchestan, Zahedan, Iran 6National Research Tomsk State University, Tomsk 634050, Russia Abstract By using first–principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene–supported phosphorene is found to be metallic, while the BN–supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV. -
Silicene, Silicene Derivatives, and Their Device Applications
Chemical Society Reviews Silicene, silicene derivatives, and their device applications Journal: Chemical Society Reviews Manuscript ID CS-REV-04-2018-000338.R1 Article Type: Review Article Date Submitted by the Author: 27-Jun-2018 Complete List of Authors: Molle, Alessandro; CNR-IMM, unit of Agrate Brianza Grazianetti, Carlo; CNR-IMM, unit of Agrate Brianza Tao, Li; The University of Texas at Autin, Microelectronics Research Center Taneja, Deepyanti; The University of Texas at Autin, Microelectronics Research Center Alam, Md Hasibul; The University of Texas at Autin, Microelectronics Research Center Akinwande, Deji; The University of Texas at Autin, Microelectronics Research Center Page 1 of 17 PleaseChemical do not Society adjust Reviews margins Chemical Society Reviews REVIEW Silicene, silicene derivatives, and their device applications Alessandro Molle,a Carlo Grazianetti,a,† Li Tao,b,† Deepyanti Taneja,c Md. Hasibul Alam,c and Deji c,† Received 00th January 20xx, Akinwande Accepted 00th January 20xx Silicene, the ultimate scaling of silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of DOI: 10.1039/x0xx00000x two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties. www.rsc.org/ Nonetheless, there is a lack of experimental studies largely due to the interplay between material degradation and process portability issues. This Review highlights state-of-the-art experimental progress and future opportunities in synthesis, characterization, stabilization, processing and experimental device example of monolayer silicene and thicker derivatives. Electrostatic characteristics of Ag-removal silicene field-effect transistor exihibits ambipolar charge transport, corroborating with theoretical predictions on Dirac Fermions and Dirac cone in band structure. -
Technology and Applications of 2D Materials in Micro- and Macroscale Electronics
Technology and Applications of 2D Materials in Micro- and Macroscale Electronics by Marek Hempel B.S., RWTH Aachen University (2010) M.S., RWTH Aachen University (2013) Submitted to the Department of Electrical Engineering and Computer Science in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY May 2020 © Massachusetts Institute of Technology 2020. All rights reserved. Author ……………………………………………………………………………………………………………………………………………………… Department of Electrical Engineering and Computer Science May 15, 2020 Certified by ………………………………………………………………………………………………………………………………………………. Tomás Palacios Professor of Electrical Engineering and Computer Science Thesis Supervisor Certified by ………………………………………………………………………………………………………………………………………………. Jing Kong Professor of Electrical Engineering and Computer Science Thesis Supervisor Accepted by ……………………………………………………………………………………………………………………………………………… Leslie A. Kolodziejski Professor of Electrical Engineering and Computer Science Chair, Department Committee on Graduate Students 1 2 Technology and Applications of 2D-Materials in Micro- and Macroscale Electronics by Marek Hempel Submitted to the Department of Electrical Engineering and Computer Science on May 15, 2020, in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Abstract: Over the past 50 years, electronics has truly revolutionized our lives. Today, many everyday objects rely on electronic circuitry from gadgets such as wireless earbuds, smartphones and -
Arxiv:1407.5880V3 [Cond-Mat.Mes-Hall] 14 Aug 2014
Oxygen defects in phosphorene A. Ziletti,1 A. Carvalho,2 D. K. Campbell,3 D. F. Coker,1, 4 and A. H. Castro Neto2, 3 1Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA 2Graphene Research Centre and Department of Physics, National University of Singapore, 117542, Singapore 3Department of Physics, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA 4Freiburg Institute for Advanced Studies (FRIAS), University of Freiburg, D-79104, Freiburg, Germany Surface reactions with oxygen are a fundamental cause of the degradation of phosphorene. Using first-principles calculations, we show that for each oxygen atom adsorbed onto phosphorene there is an energy release of about 2 eV. Although the most stable oxygen adsorbed forms are electrically inactive and lead only to minor distortions of the lattice, there are low energy metastable forms which introduce deep donor and/or acceptor levels in the gap. We also propose a mechanism for phosphorene oxidation and we suggest that dangling oxygen atoms increase the hydrophilicity of phosphorene. PACS numbers: 73.20.At,73.20.Hb Phosphorene, a single layer of black phosphorus[1, 2], phosphorene is exoenergetic and leads to the formation of has revealed extraordinary functional properties which neutral defects, as well as to metastable electrically active make it a promising material not only for exploring novel defect forms. We also discuss the conditions necessary for physical phenomena but also for practical applications. extensive oxidation and propose strategies to control it. In contrast to graphene, which is a semi-metal, phospho- Oxygen defects were modeled using first-principles cal- rene is a semiconductor with a quasiparticle band gap of 2 culations based on density functional theory (DFT), as eV. -
Call for Papers | 2022 MRS Spring Meeting
Symposium CH01: Frontiers of In Situ Materials Characterization—From New Instrumentation and Method to Imaging Aided Materials Design Advancement in synchrotron X-ray techniques, microscopy and spectroscopy has extended the characterization capability to study the structure, phonon, spin, and electromagnetic field of materials with improved temporal and spatial resolution. This symposium will cover recent advances of in situ imaging techniques and highlight progress in materials design, synthesis, and engineering in catalysts and devices aided by insights gained from the state-of-the-art real-time materials characterization. This program will bring together works with an emphasis on developing and applying new methods in X-ray or electron diffraction, scanning probe microscopy, and other techniques to in situ studies of the dynamics in materials, such as the structural and chemical evolution of energy materials and catalysts, and the electronic structure of semiconductor and functional oxides. Additionally, this symposium will focus on works in designing, synthesizing new materials and optimizing materials properties by utilizing the insights on mechanisms of materials processes at different length or time scales revealed by in situ techniques. Emerging big data analysis approaches and method development presenting opportunities to aid materials design are welcomed. Discussion on experimental strategies, data analysis, and conceptual works showcasing how new in situ tools can probe exotic and critical processes in materials, such as charge and heat transfer, bonding, transport of molecule and ions, are encouraged. The symposium will identify new directions of in situ research, facilitate the application of new techniques to in situ liquid and gas phase microscopy and spectroscopy, and bridge mechanistic study with practical synthesis and engineering for materials with a broad range of applications. -
Application of Silicene, Germanene and Stanene for Na Or Li Ion Storage: a Theoretical Investigation
Application of silicene, germanene and stanene for Na or Li ion storage: A theoretical investigation Bohayra Mortazavi*,1, Arezoo Dianat2, Gianaurelio Cuniberti2, Timon Rabczuk1,# 1Institute of Structural Mechanics, Bauhaus-Universität Weimar, Marienstr. 15, D-99423 Weimar, Germany. 2Institute for Materials Science and Max Bergman Center of Biomaterials, TU Dresden, 01062 Dresden, Germany Abstract Silicene, germanene and stanene likely to graphene are atomic thick material with interesting properties. We employed first-principles density functional theory (DFT) calculations to investigate and compare the interaction of Na or Li ions on these films. We first identified the most stable binding sites and their corresponding binding energies for a single Na or Li adatom on the considered membranes. Then we gradually increased the ions concentration until the full saturation of the surfaces is achieved. Our Bader charge analysis confirmed complete charge transfer between Li or Na ions with the studied 2D sheets. We then utilized nudged elastic band method to analyze and compare the energy barriers for Li or Na ions diffusions along the surface and through the films thicknesses. Our investigation findings can be useful for the potential application of silicene, germanene and stanene for Na or Li ion batteries. Keywords: Silicene; germanene; stanene; first-principles; Li ions; *Corresponding author (Bohayra Mortazavi): [email protected] Tel: +49 157 8037 8770, Fax: +49 364 358 4511 #[email protected] 1. Introduction The interest toward two-dimensional (2D) materials was raised by the great success of graphene [1–3]. Graphene is a zero-gap semiconductor that present outstanding mechanical [4] and heat conduction [5] properties, surpassing all known materials. -
Reconfigurable Polarizer Based on Bulk Dirac Semimetal Metasurface
crystals Article Reconfigurable Polarizer Based on Bulk Dirac Semimetal Metasurface Yannan Jiang, Jing Zhao and Jiao Wang * Guangxi Key Laboratory of Wireless Wideband Communication & Signal Processing, Guilin 541000, China; [email protected] (Y.J.); [email protected] (J.Z.) * Correspondence: [email protected] Received: 22 February 2020; Accepted: 16 March 2020; Published: 21 March 2020 Abstract: In this paper, we propose a reflective polarizer in terahertz regime, which utilizes the Bulk-Dirac-Semimetal (BDS) metasurface can be dynamically tuned in broadband. The proposed polarizer is capable of converting the linear polarized wave into the circular polarized or the cross polarized waves by adjusting the Fermi energy (EF) of the BDS. In the frequency range of 0.51 THz and 1.06 THz, the incident linear polarized wave is converted into a circular polarized wave with an axial ratio (AR) less than 3 dB when EF = 30 meV. When EF = 45 meV, the cross-polarization conversion is achieved with the polarization conversion ratio (PCR) greater than 90% in the band of 0.57 1.12 THz. Meanwhile, the conversion efficiencies for both polarization conversions are in − excess of 90%. Finally, the physical mechanism is revealed by the decomposition of two orthogonal components and the verification is presented by the interference theory. Keywords: reconfigurable polarizer; tunable metasurface; broadband; Bulk-Dirac-Semimetal 1. Introduction In recent years, terahertz (THz) technology has developed rapidly in many fields, such as sensing [1], imaging [2] and radar [3] because terahertz waves have very low photon energy, strong penetrability, and obvious characteristic absorption peaks, making terahertz technology show significant research value and great prospects in material detection, security inspection, military, and wireless communications. -
Theoretical Study of a New Porous 2D Silicon-Filled Composite Based on Graphene and Single-Walled Carbon Nanotubes for Lithium-Ion Batteries
applied sciences Article Theoretical Study of a New Porous 2D Silicon-Filled Composite Based on Graphene and Single-Walled Carbon Nanotubes for Lithium-Ion Batteries Dmitry A. Kolosov 1 and Olga E. Glukhova 1,2,* 1 Department of Physics, Saratov State University, Astrakhanskaya street 83, 410012 Saratov, Russia; [email protected] 2 Laboratory of Biomedical Nanotechnology, I.M. Sechenov First Moscow State Medical University, Trubetskaya street 8-2, 119991 Moscow, Russia * Correspondence: [email protected]; Tel.: +7-84-5251-4562 Received: 24 July 2020; Accepted: 18 August 2020; Published: 21 August 2020 Abstract: The incorporation of Si16 nanoclusters into the pores of pillared graphene on the base of single-walled carbon nanotubes (SWCNTs) significantly improved its properties as anode material of Li-ion batteries. Quantum-chemical calculation of the silicon-filled pillared graphene efficiency found (I) the optimal mass fraction of silicon (Si)providing maximum anode capacity; (II) the optimal Li: C and Li: Si ratios, when a smaller number of C and Si atoms captured more amount of Li ions; and (III) the conditions of the most energetically favorable delithiation process. For 2D-pillared graphene with a sheet spacing of 2–3 nm and SWCNTs distance of ~5 nm the best silicon concentration in pores was ~13–18 wt.%. In this case the value of achieved capacity exceeded the graphite anode one by 400%. Increasing of silicon mass fraction to 35–44% or more leads to a decrease in the anode capacity and to a risk of pillared graphene destruction. It is predicted that this study will provide useful information for the design of hybrid silicon-carbon anodes for efficient next-generation Li-ion batteries. -
Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)
Letter pubs.acs.org/NanoLett Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111) † † † ‡ † † † † Baojie Feng, Zijing Ding, Sheng Meng, Yugui Yao, , Xiaoyue He, Peng Cheng, Lan Chen,*, † and Kehui Wu*, † Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China ‡ School of Physics, Beijing Institute of Technology, Beijing 100081, China ABSTRACT: In the search for evidence of silicene, a two- dimensional honeycomb lattice of silicon, it is important to obtain a complete picture for the evolution of Si structures on Ag(111), which is believed to be the most suitable substrate for growth of silicene so far. In this work we report the finding and evolution of several monolayer superstructures of silicon on Ag(111), depend- ing on the coverage and temperature. Combined with first- principles calculations, the detailed structures of these phases have been illuminated. These structures were found to share common building blocks of silicon rings, and they evolve from a fragment of silicene to a complete monolayer silicene and multilayer silicene. Our results elucidate how silicene forms on Ag(111) surface and provides methods to synthesize high-quality and large- scale silicene. KEYWORDS: Silicene, Ag(111), scannning tunneling microscopy, molecular beam epitaxy, first-principles calculation ith the development of the semiconductor industry of silicene and optimizing the preparation procedure for W toward a smaller scale, the rich quantum phenomena in growing high-quality silicene films, it is important to build a low-dimensional systems may lead to new concepts and complete understanding of the formation mechanism and ground-breaking applications. In the past decade graphene growth dynamics of possible silicon structures on Ag(111), has emerged as a low-dimensional system for both fundamental which is currently believed to be the best substrate for growing research and novel applications including electronic devices, silicene. -
An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu Purdue University, Birck Nanotechnology Center, [email protected]
Purdue University Purdue e-Pubs Birck and NCN Publications Birck Nanotechnology Center 4-2014 Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu Purdue University, Birck Nanotechnology Center, [email protected] Adam T. Neal Purdue University, Birck Nanotechnology Center, [email protected] Zhen Zhu Michigan State University Xianfan Xu Purdue University, Birck Nanotechnology Center, [email protected] David Tomanek Michigan State University See next page for additional authors Follow this and additional works at: http://docs.lib.purdue.edu/nanopub Part of the Nanoscience and Nanotechnology Commons Liu, Han; Neal, Adam T.; Zhu, Zhen; Xu, Xianfan; Tomanek, David; Ye, Peide D.; and Luo, Zhe, "Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility" (2014). Birck and NCN Publications. Paper 1584. http://dx.doi.org/10.1021/nn501226z This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. Authors Han Liu, Adam T. Neal, Zhen Zhu, Xianfan Xu, David Tomanek, Peide D. Ye, and Zhe Luo This article is available at Purdue e-Pubs: http://docs.lib.purdue.edu/nanopub/1584 ARTICLE Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu,†,‡ Adam T. Neal,†,‡ Zhen Zhu,§ Zhe Luo,‡,^ Xianfan Xu,‡,^ David Toma´ nek,§ and Peide D. Ye†,‡,* †School of Electrical and Computer Engineering and ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States, §Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States, and ^School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States ABSTRACT We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. -
Material Requirements for 3D IC and Packaging
Material Requirements For 3D IC and Packaging Presented by: W. R. Bottoms Frontiers of Characterization and Metrology for Nanoelectronics Hilton Dresden April 14-16, 2015 Frontiers of Characterization & Metrology for Nanoelectronics Dresden April 2015 Industry Needs Are Changing Moore’s Law is reaching limits of the physics – Scaling can no longer support the pace of progress – Power requirement and performance no longer scale with feature size Electronics Industry Drivers have changed – Mobile wireless devices, IoT and the Cloud are driving future demand Electronics are entering every aspect of our lives – Each area has unique requirements Frontiers of Characterization & Metrology for Nanoelectronics Dresden April 2015 Moore’s Law Scaling Is Nearing Its End Global Foundries You know it’s really “the End” When scaling to the next node increases cost Frontiers of Characterization & Metrology for Nanoelectronics Dresden April 2015 Moore’s Law Scaling Is Nearing Its End Scaling Can help but it cannot be a major component of the solution to these challenges Global Foundries You know it’s really “the End” When scaling to the next node increases cost Frontiers of Characterization & Metrology for Nanoelectronics Dresden April 2015 New Technology Drivers Are Emerging Frontiers of Characterization & Metrology for Nanoelectronics Dresden April 2015 Emerging Technology Drivers There are 2 market driven trends forcing more fundamental change on the industry as they move into position as the new technology Drivers. Rise of the Internet of Things Data, logic and applications moving to the Cloud Over the next 15 years almost everything will change including the global network architecture and all the components incorporated in it or attached to it. -
Science & Technology Trends 2020-2040
Science & Technology Trends 2020-2040 Exploring the S&T Edge NATO Science & Technology Organization DISCLAIMER The research and analysis underlying this report and its conclusions were conducted by the NATO S&T Organization (STO) drawing upon the support of the Alliance’s defence S&T community, NATO Allied Command Transformation (ACT) and the NATO Communications and Information Agency (NCIA). This report does not represent the official opinion or position of NATO or individual governments, but provides considered advice to NATO and Nations’ leadership on significant S&T issues. D.F. Reding J. Eaton NATO Science & Technology Organization Office of the Chief Scientist NATO Headquarters B-1110 Brussels Belgium http:\www.sto.nato.int Distributed free of charge for informational purposes; hard copies may be obtained on request, subject to availability from the NATO Office of the Chief Scientist. The sale and reproduction of this report for commercial purposes is prohibited. Extracts may be used for bona fide educational and informational purposes subject to attribution to the NATO S&T Organization. Unless otherwise credited all non-original graphics are used under Creative Commons licensing (for original sources see https://commons.wikimedia.org and https://www.pxfuel.com/). All icon-based graphics are derived from Microsoft® Office and are used royalty-free. Copyright © NATO Science & Technology Organization, 2020 First published, March 2020 Foreword As the world Science & Tech- changes, so does nology Trends: our Alliance. 2020-2040 pro- NATO adapts. vides an assess- We continue to ment of the im- work together as pact of S&T ad- a community of vances over the like-minded na- next 20 years tions, seeking to on the Alliance.