Arxiv:0903.0027V1 [Cond-Mat.Mtrl-Sci] 28 Feb 2009 Here, E Ucin,Weesrf 1]Ue Nexact-Exchange an Space Wavevector Uses in Cutoﬀ [10] a Including Approach, Ref

arXiv:0903.0027v1 [cond-mat.mtrl-sci] 28 Feb 2009 Here, e ucin,weesRf 1]ue nexact-exchange an space wavevector uses in cutoff [10] a including approach, Ref. (EXX) whereas functions, proximate aefntosadbnigeege fo o nwe on now (from energies ¯ binding set and functions wave tn ftemtra,and material, the of stant essi aeil 7 ,1,1] nlinear-response exchange-correlation In prin- the provided kernel in (XC) 13], 11]. calculated [12, be 10, exactly can ciple 9, energies pro- [7, excitation excitation TDDFT, materials electronic in to cesses computation- approach alternative, convenient an as ally emerged recently has [8] [7]. the equation as such GW/Bethe-Salpeter techniques function developed Green’s be many-body using can screening, of correlation-induced in- treatment semiconductors, cluding and ab-initio insulators rigorous in processes more excitation A to over- strongly excitons. time-dependent with leads materials, bound that of interaction spectra known optical Coulomb well poor very bare is It with Hartree-Fock 6]. in- [3, Coulomb screened teraction ap- dielectrically Hartree-Fock a using time-dependent proximation, the within equations 5]. ma- [4, large inorganic systems a and nanoscale organic for and in terials important processes are optical effects of Elliott variety Excitonic the the by around [3]. described qualitatively spectrum formula is optical which edge of the band redistribution in states a energy strength and discrete edge, oscillator band of conduction series the Rydberg below a produces [2], osveste sbudeeto-oepiswihsat- which [1]: pairs Schrödinger equation hydrogen-like electron-hole a bound isfy as them views tors steeeto charge, electron the is iedpnetdniyfntoa hoy(TDDFT) theory density-functional Time-dependent Bloch semiconductor the from derived be can (1) Eq. h lmnaymdlo ane xiosi insula- in excitons Wannier of model elementary The h = m e r iedpnetdniyfntoa prahfrectnb exciton for approach density-functional Time-dependent ) q 1,as nw sWnirequation Wannier as known also (1), Eq. 1). = f sterdcdeeto-oeeetv mass, effective electron-hole reduced the is xc f ASnmes 11.e 11.b 71.35.-y 71.15.Mb, 31.15.ee, numbers: PACS us semiconductors, direct-gap several in exchange-correlat non energies dynamical a binding and featuring long-range Thi excitons, by for determined energies. equation t Wannier binding a standard in excitonic the equations calculating Bloch for semiconductor formalism TDDFT the density-functi of time-dependent earization using exactly principle in xc − a osrce rmmn-oyGreen’s many-body from constructed was pia rcse nisltr n eiodcos inclu semiconductors, and insulators in processes Optical ( r ¯ h 2 1 , 2 m eateto hsc n srnm,Uiest fMissour of University Astronomy, and Physics of Department r ∇ ′ r ω , 2 − skon nRf.[,9,a ap- an 9], [7, Refs. In known. is ) e ǫr 2 ǫ stesai ilcrccon- dielectric static the is φ φ 2 eateto hsc n aocec ehooyCenter, Technology NanoScience and Physics of Department ( and r = ) nvriyo eta lrd,Olno L32816 FL Orlando, Florida, Central of University E Eφ r h excitonic the are ( .Turkowski V. r ) . Dtd oebr1,2018) 12, November (Dated: (1) ,2 1, n .A Ullrich A. C. and o infiatyls hnfrsadr aybd ap- many-body is standard effort for technical than the proaches. less but experi- significantly [11], with not excellent agreement is resulting data The mental approxima- [8]. local-density com- (ALDA) adiabatic more the tion the as beyond such go ones that mon functionals although XC solids, needs in one effects of excitonic capable describing is TDDFT accurately [14]. that interaction established have Coulomb studies the These of screening mimics which where in functionals. test- treated of XC way approximate are straightforward ing a effects provides phys- excitonic also way provides but TDDFT, the only into not insight treatment ical simplified forma- Our exciton for tion. essential are effects shows XC an long-range explicitly derive how which we interaction [15], version electron-hole equations that effective TDDFT Bloch a semiconductor method from the the a Starting of to namely similar (1). energies, equation modest, Wannier binding more excitonic spec- is yields optical directly goal complete calculating our in than effects tra, excitonic Rather of treatment solids. TDDFT simpler much h iedpnetKh-hm(S riasΨ orbitals by described (KS) is Kohn-Sham solid time-dependent a the of dynamics electron the TDDFT, scniee) h ytmi sue osatfo the from start to Ψ states assumed state, is occupied ground system initially The the of considered). is evolution time the (only onOpnemrapoiain and approximation) Born-Oppenheimer where in n adsrcueflo from follow structure band and tions h ttcHrreadX potentials. XC and Hartree static the iedpnetKh-hmfraimfrsolids. for formalism Kohn-Sham Time-dependent formally a develop to is paper this of purpose The ic the Since − nlter TDT.Satn rmalin- a from Starting (TDDFT). theory onal n xhneol n oe Ckernels. XC model and exchange-only ing 2 ∇ omls ed oagnrlzto of generalization a to leads formalism s m k o X)eet.W aclt excitonic calculate We effects. (XC) ion V 2 igectnceet,cnb described be can effects, excitonic ding oa ffcieeeto-oeinteraction electron-hole effective local stewv etrand vector wave the is lat + obn oe,w eieasimple a derive we model, wo-band V stecytlltieptnil(ihnthe (within potential lattice crystal the is lat ψ j ( k 1 r j ( ,Clmi,M 65211 MO Columbia, i, + ) k r ( omacmlt e o each for set complete a form ) r t , V H 0 0 = ) ( r + ) nigenergies inding ψ j V k j xc 0 ( r stevlnebn index band valence the is ( .TeK lc func- Bloch KS The ). r ) − ε j k V H 0 ψ and j k ( r 0 = ) j V k xc k ( 0 r we , In – t , are (2) , ), 2 can expand the time-dependent KS orbitals as follows: where we dropped the time-dependent external field term, since the excitations we are interested in can be r jl r ˜ vc Ψjk( ,t)= ck (t)ψlk( ) , (3) viewed as eigenmodes of the system. Here, δVHk and Xl ˜ vc δVxck denote the linearized dynamical Hartree and XC where the summation runs over all valence and conduc- potentials. In a periodic insulating solid, the Hartree tion bands, including continuum states. Eq. (3) is ap- term only gives rise to the so-called local field correc- propriate if we assume the system to interact with an tions, which do not affect excitonic binding [7]. We will electromagnetic field in dipole approximation. We define therefore only keep the XC contribution in the following. the density matrix ρlm(t) = cjl(t)[cjm(t)]∗, whose equa- Fourier transformation of Eq. (9) and the correspond- jk k k cv tion of motion is ing equation for ρk (t) leads to vccv vc vcvc cv ∂ q Fkq (ω)ρq (ω)+ Fkq (ω)ρq (ω) i ρjk(t) = [Hk(t), ρjk(t)], (4) vc ∂t ρk (ω) = −P h cv (10)i ω + ωk lm with initial condition ρjk (t0) = δjlδml. The matrix ele- cvcv vc cvvc cv q Fkq (ω)ρq (ω)+ Fkq (ω)ρq (ω) ments of the TDDFT Hamiltonian are cv ρk (ω) = P h cv i(11), ω − ωk lm 1 3 ∗ Hk (t) = d r ψlk(r)H(t)ψmk(r) where ωcv = εc − εv , Ω ZΩ k k k lm ˜ lm ˜ lm = εlkδlm + E(t)dk + VHk (t)+ Vxck(t) , (5) ijmn 2 3 3 ′ ∗ ′ Fkq (ω) = 2 d r d r ψik(r)ψjk(r)fxc(r, r ,ω) Ω ZΩ ZΩ where Ω is the volume of the lattice unit cell, E(t) is the ∗ r′ r′ lm ×ψmq( )ψnq( ) , (12) electric field amplitude, and dk are the dipole matrix el- ˜ 0 and the q-summation runs over the first Brillouin zone. ements. VH(t)= VH(t) − VH denotes the dynamic part of the Hartree potential, and similar for XC. Self-consistent Eqs. (10) and (11) can be cast into an eigenvalue prob- solution of Eq. (4), with the time-dependent density lem for the excitation energies ω. Since fxc is in general frequency-dependent, the eigenvalue problem is nonlin- lm ∗ n(r,t)=2 θ(εF − εjk) ρjk (t)ψlk(r)ψmk(r) , (6) ear. The solutions are the exact excitonic binding ener- Xjk Xlm gies within the two-band model. Let us carry out a further simplification. Since typi- where εF is the Fermi energy, is equivalent to solving the cal excitonic binding energies are much smaller than the time-dependent KS equations for the solid, and is thus cv cv band gap, i.e., ω + ωk ≫ ω − ωk , we can ignore the pole in principle exact. at negative ω (which is equivalent to the Tamm-Dancoff Two-band model and excitons. – To study optical exci- vc approximation [8]) and boldly set ρk = 0. This leads to tation processes near the band gap, a two-band model is a cv cvvc cv cv reasonable and widely used approximation. We consider ωq δkq + Fkq (ω) ρq (ω)= ωρk (ω) . (13) one valence and one conduction band, v and c, assumed Xq to be nondegenerate (see [16] for a discussion of band de- lm Eq. (13) is the equivalent for extended systems of the generacy). The index j of the density matrix ρjk (t) refers well-known single-pole approximation of linear-response to v and will be dropped in the following. Eq. (4) yields TDDFT [12]. For finite atomic or molecular systems, the TDDFT semiconductor Bloch equations for the two vv vc the single-pole approximation only involves two discrete independent components ρk and ρk [15]: levels. Here, it involves two entire bands, which clearly shows the collective nature of excitonic effects. ∂ vv cv ˜ cv ˜ cv vc ρk (t) = −2Im E(t)dk + VHk + Vxck ρk (t) (7) We point out that Eq. (13) yields excitonic binding ∂t nh i o energies relative to the conduction band edge, which can ∂ vc v c ˜ vv ˜ vv ˜ cc i ρk (t) = εk − εk + VHk(t)+ Vxck(t) − VHk(t) be accurate even if the band gap itself is not. ∂t h TDDFT Wannier equation. – Our next goal is to de- ˜ cc vc vc ˜ vc −Vxck(t) ρk (t)+ E(t)dk + VHk(t) rive a real-space equation for the excitonic binding ener- i h cv ˜ vc cc vv gies. ρk is a periodic function in reciprocal space, with +Vxck(t) [ρk (t) − ρk (t)] . (8) Fourier transform ρ(R,ω) = e−ik·Rρcv(ω), where R i k k ∗ is a direct lattice vector. Similarly,P we define Notice that ρvv + ρcc = 1 and ρvc = ρcv . In Ref. [15], k k k k ′ ′ −ik·R cvvc iq·R Eqs. (7) and (8) were evaluated in the time domain for Veh(R, R ,ω) = e Fkq (ω)e . (14) ultrafast pulsed excitations. Here, we are interested in Xk,q excitonic binding energies, and we linearize Eq. (8): From the point of view of a Wannier exciton, which ex- ∂ tends over many lattice constants, R can be approxi- i ρvc(t)= [εv − εc ]ρvc(t) − δV˜ vc (t) − δV˜ vc (t) , (9) ∂t k k k k Hk xck mated as a continuous variable. We assume a direct band 3

gap material, and use approximate parabolic dispersions exp Slater TABLE I: Eb and Eb : lowest direct excitonic binding with conduction and valence band effective masses mc −1 energies (in meV) for selected III-V and II-VI compounds, and mv, and reduced electron-hole effective mass mr = Slater −1 −1 from experiment [22] and from Eqs. (13), (12) with fx . mc +mv . This yields the TDDFT version of the Wan- The parameters A and α/4π (in a.u.) are fitted to reproduce exp contact LRC nier equation (1), Eb using Eqs. (13), (12) with fxc and fxc .

2 Slater exp ∇ 3 ′ ′ ′ A α/4π Eb Eb − − Eb,i ρi(r)+ d r Veh(r, r ,ω)ρi(r )=0 , 2m Z all GaAs 1.68 0.12 17.4 3.27 r space (15) β-GaN 4.23 0.55 28.7 26.0 featuring a nonlocal, frequency-dependent electron-hole α-GaN 2.03 0.91 11.8 20.4 ′ KS KS interaction Veh(r, r ,ω), where ω = Eg + Eb,i, and Eg CdS 6.28 1.83 7.9 28.0 is the KS band gap. The ith excitonic binding energy CdSe 4.84 1.19 8.3 15.0 Eb,i is measured with respect to the KS conduction band edge, and the ρi(r) are the analog of the excitonic wave functions φ(r) of Eq. (1). CdSe, which determines the dimension of the eigenvalue XC kernels. – The eﬀective electron-hole interaction in problem (13). Recent Bethe-Salpeter calculations of ex- TDDFT, and thus the excitonic binding energies, depend citonic binding energies used much higher k-point densi- crucially on the approximate XC kernel. In the following, ties close to the zone center [20, 21]; we performed con- we shall implement several simple frequency-independent vergence checks of our k-point sampling rates and found XC kernels and test their performance in our formalism. them to be suﬃciently accurate for our simple model. The exchange-only ALDA kernel is given by As expected, the ALDA does not produce any bound ALDA ′ 2 −1/3 ′ fx (r, r )= −[9πn0(r)] δ(r − r ) , (16) excitons. Results for the other three XC kernels and experimental binding energies of the lowest direct excitons ALDA where n0(r) is the equilibrium electron density. fx are presented in Table I. The contact and LRC kernels, belongs to the class of ultra-short-range kernels; the sim- (17) and (19), contain adjustable parameters which can plest of them is be tuned to reproduce the experimental exciton binding

contact ′ ′ energies. The required values of the parameters A and α fxc (r, r )= −Aδ(r − r ) , (17) are found to be of similar order as in Ref. [18]. where A is a positive constant. Such kernels have been The contact and LRC kernels only yield a single exci- used with some success in contact exciton models [11]. tonic bound state [18]. This is generally the case for static An approximation of exact-exchange TDDFT [10], the XC kernels that are local in reciprocal space, i.e., have Slater exchange kernel, is given by [12] the form fxc(q). The Slater XC kernel (18) does have some degree of nonlocality in reciprocal space, but we r ∗ r′ 2 found that it only produces a single excitonic state, like Slater ′ 2| jk θ(ǫF − ǫjk)ψjk( )ψjk( )| fx (r, r )= − ′ ′ .(18) the local kernels. To obtain an excitonic Rydberg series P |r − r |n0(r)n0(r ) one needs an XC kernel that has a sufficiently strongly This kernel exhibits some degree of long-range behavior nonlocal form or is frequency-dependent [23, 24]. 2 Slater [17], but not the ultra-nonlocality (∼ 1/q in momentum Looking at the results obtained with fx , we find space) of the exact fxc [7, 10, 11]. This long-range contri- excitons that are overbound by 14 meV in GaAs and by bution (LRC) can be explicitly taken into account using 2.7 meV in β-GaN. This overbinding is what one would the following model kernel [18]: expect from an unscreened exchange-only approach (electronic screening can be viewed as a correlation effect). On ′ α f LRC(r, r )= − , (19) the other hand, f Slater approaches a constant for q → 0 in xc 4π|r − r′| x homogeneous systems [17], whereas the full EXX fx be- 2 Slater where α is again an adjustable parameter. haves as 1/q [10]. This would suggest that fx has a Results and Discussion. – We have tested our TDDFT somewhat weaker effective electron-hole interaction than approach for excitonic binding energies, Eq. (13), for full EXX. This trend seems confirmed in the wurtzite the zincblende materials GaAs and β-GaN and for the materials whose calculated excitonic binding energies are wurtzite materials α-GaN, CdS, and CdSe. The Bloch significantly below experiment. functions for the conduction and heavy-hole valence Additional insight is provided by comparing the bands were obtained from LDA band structures calcu- electron-hole interaction Veh for the different XC kernels lated with the plane-wave pseudopotential code ABINIT under study. Fig. 1 shows Veh(r, 0) for GaAs along the x [19]. We used 512 k-points in the first Brillouin zone direction (due to the finite sampling in k-space, Veh can for all materials. Out of these, there are 10 independent only be reliably calculated within the range of about one points for GaAs and β-GaN and 20 for α-GaN, CdS, and unit cell). In ALDA, the interaction is close to zero and 4

in wurtzite. There are theoretical arguments in favor of both trends, which suggests a need for more systematic ALDA 0 studies of the Slater exchange kernel in solids. contact In conclusion, our simple approach for excitonic bind-

LRC ing energies is a promising method to test XC kernels in -20 solids. It can be extended in a straightforward way to deal with spin-dependent excitations (triplet excitons), (meV)

eh with more sophisticated XC kernels, or to include more Slater

-40 V bands. Work along these lines is in progress. This work was supported by NSF Grant DMR- 0553485. We thank Angel Rubio, Lucia Reining, and

-60

0.0 0.5 1.0 Claudia Ambrosch-Draxl for useful discussions.

x/a

FIG. 1: Effective electron-hole interaction Veh(r, 0) for GaAs and different XC kernels, plotted along the x direction, where a is the lattice constant. The parameters A and α for the [1] M. P. Marder, Condensed Matter Physics (Wiley, New contact and the LRC XC kernels are given in Table I. York, 2000). [2] G. H. Wannier, Phys. Rev. 52, 191 (1937). [3] H. Haug and S. W. Koch, Quantum theory of the optical and electronic properties of semiconductors, 4th ed. thus too shallow to lead to any excitonic binding. The (World Scientific, Singapore, 2004). other XC kernels produce stronger electron-hole interac- [4] S. W. Koch et al., Nature Mat. 5, 523 (2006). tions, where for GaAs the contact and LRC models are [5] G. D. Scholes and G. Rumbles, Nature Mat. 5, 683 less attractive than the Slater approximation. (2006). Conclusion. – We have presented a simple method [6] W. Schäfer and M. Wegener, Semiconductor Optics and Transport Phenomena to calculate excitonic binding energies using TDDFT. (Springer, Berlin, 2002). [7] G. Onida et al., Rev. Mod. Phys. 74, 601 (2002). The main idea, restricting the dynamics to the high- [8] Time-dependent density functional theory, edited by M. est valence and the lowest conduction band, is similar to A. L. Marques et al., Lecture Notes in Physics 706 the single-pole approximation for excitation energies [12]. (Springer, Berlin, 2006). Our derivation was based on the TDDFT semiconduc- [9] L. Reining et al., Phys. Rev. Lett. 88, 066404 (2002); A. tor Bloch equation; an alternative starting point could Marini et al., Phys. Rev. Lett. 91, 256402 (2003). 89 be the Casida formalism of linear-response TDDFT [13], [10] Y. H. Kim and A. Görling, Phys. Rev. Lett , 096402 66 formulated for periodic systems [25]. The resulting sim- (2002); Y. H. Kim and A. Görling, Phys. Rev. B , 035114 (2002). ple eigenvalue equation in momentum space, Eq. (13), is [11] S. Botti et al., Rep. Prog. Phys. 70, 357 (2007). readily diagonalized to yield the excitonic binding ener- [12] M. Petersilka et al., Phys. Rev. Lett. 76, 1212 (1996). gies. Transformation into real space leads to the TDDFT [13] M. E. Casida, in Recent Advances in Density Functional analog of the Wannier equation for excitons, and shows Methods, edited by D. E. Chong (World Scientific, Sin- that the effective electron-hole interaction is nonlocal. gapore, 1995), Vol. 1, p. 155. 124 The quality of the results depends crucially on the ap- [14] F. Bruneval et al., J. Chem. Phys. , 14113 (2006). [15] V. Turkowski and C. A. Ullrich, Phys. Rev. B 77, 075204 r r′ proximation used for fxc( , ,ω). It is well known that (2008). local and semilocal approximations, such as the ALDA, [16] A. Baldereschi and N. C. Lipari, Phys. Rev. B 3, 439 do not produce any excitons. There exist sophisticated (1971). parameter-free XC kernels [9] that are capable of repro- [17] M. Lein et al., Phys. Rev. B 61, 13431 (2000). ducing experimental optical absorption spectra very ac- [18] S. Botti et al., Phys. Rev. B 69, 155112 (2004). 25 curately, including bound excitons [24], but with sub- [19] X. Gonze et al., Comput. Mater. Sci. , 478 (2002); X. 220 stantial computational cost. Gonze et al., Z. Kristallogr. , 558 (2005). [20] R. Laskowski et al., Phys. Rev. B 72, 035204 (2005). If only particular aspects of the optical spectrum of [21] F. Fuchs et al.. Phys. Rev. B 78, 085103 (2008). a material are required such as, for instance, the lowest [22] P. Parenteau et al., J. Appl. Phys. 71, 3747 (1992), GaAs; bound exciton, simple static XC kernels can be a con- D. J. As et al., Appl. Phys. Lett. 70, 1311 (1997), β-GaN; venient alternative. The contact and the LRC kernels J. F. Muth et al., Appl. Phys. Lett. 71, 2572 (1997), α- behave quite similarly in the sense that they produce a GaN; M. A. Jakobson et al., J. Cryst. Growth 138, 225 91 single excitonic peak. A detailed analysis was given in (1994), CdS; J. Voigt et al., Phys. Status Solidi (b) , 189 (1979), CdSe. Ref. [23], and we find the same behavior in our two-band [23] F. Sottile et al., Phys. Rev. B 68, 205112 (2003). approach. The parameter-free Slater exchange-only ker- [24] F. Sottile et al., Phys. Rev. B 76, 161103(R) (2007). nel also produces a single exciton, which was found to [25] M. Grüning and X. Gonze, Phys. Rev. B 76, 035126 be overbound in zincblende materials, and underbound (2007).