Arxiv:1507.04599V2 [Cond-Mat.Mes-Hall]

arXiv:1507.04599v2 [cond-mat.mes-hall] 8 May 2016 n oe n ro,i nte ae hre exciton, temperature charged name, room another at in trion, even exciton, and both hole, by and dominated is screening response i.e. the Optical and limit two-dimensional effect. exists strict holes the and there to electrons due because between interaction effects Coulomb excitonic strong the strongly by are TMDCs influenced monolayer of properties optical The a) WSe rotation monolayer Kerr in dynamics valley Exciton r oae tteunequivalent the at located are on based materials. devices TMDC optoelectronic thin atomically and the applications photonic potential novel the in reported indicate monolayer effects recently in excitonic biexciton been dant of also existence has the TMDCs of evidence the TDs uha MoS as such (TMDCs) w-iesoa aeil ihtedrc ada in degenerate bandgap energetically the direct at region the visible the with materials two-dimensional 1,Biig108,Pol’ eulco hn.Emi:xi E-mail: China. of Republic People’s [email protected]. 100083, P. Sciences, Beijing of Academy 912, Chinese Semiconductors, of stitute K ih iclrdcrimadteectnvle swl as well as the valley between exciton DoF the lock spin and the dichroism describes circular which light opti- rule, an selection characterize cal TMDCs spin- monolayer large coupling, and symmetry DoF. orbit inversion valley broken (DoF), the to freedom Thanks of degree additional possess eto sn h taysaehlct-eovdphotolu- technique helicity-resolved (PL) steady-state de- minescence and the injection using polarization tection valley exciton the realized e yaiswste tde ytehlct-adtime- and helicity- the PL by studied resolved then was dynamics ley ag.Btmr ealdsuis seilytetrion the especially picosecond studies, the detailed in more be But to confirmed range. was time relaxation ini h aeil a enapidt netgt the investigate TMDCs to in applied polariza- dynamics been spin valley has or exciton material, valley the the in tech- probes tion a directly (TRKR), which rotation nique Kerr time-resolved the cently, − tt e aoaoyo ueltie n Microstructures and Superlattices of Laboratory Key State h rgtectn n rosi ooae TMDCs monolayer in trions and excitons bright The ooaeso rniinmtldichalcogenides metal transition of Monolayers h obnto fapi fcnndelectron confined of pair a of combination the , onso h eaoa rloi zone Brillouin hexagonal the of points ege a,Jain e ioe io igegTn n Xi and Tan, Pingheng Qiao, Xiaofen Ye, Jialiang Yan, Tengfei ietydtc n nesadtevle yaisi hs materia of these degree in valley dynamics the valley the WSe utilizing monolayer understand of and prospect perf detect the provide directly determine materials To layered two-dimensional ploration. developed newly The rb htneeg nrsnnewt h reectn n trion and excitons free WSe the monolayer WSe with in resonance states in excitonic energy photon probe hto reectn.Ti nigsget httincnb goo a be can trion that trions suggests for finding lifetime This valley the excitons. that free of showing that trions, the with associated 45,46 16,43,78 2 ssoni I.1.Peiu ok have works Previous 1a. FIG. in shown as , scnre ob eea ioeod.Aso alyplrzto rela polarization valley slow A picoseconds. several be to confirmed is n eetnespectrum reflectance and 2 2 n WSe and sivsiae ytetoclrpm-rb ant-pia Ker magneto-optical pump-probe two-color the by investigated is 3,5,20,48,54,55 13,21,22,25–27,35 K 2 + 60,61 r el developed newly are or h xio val- exciton The . xio valley Exciton . K 77 − Moreover, . h abun- The . 2 aly thus valley, sdtrie.Vle eaaintm ftefe xio nmonolayer in exciton free the of time relaxation Valley determined. is 2,19,34,50,53 56–59 K Re- . .Box O. + and In- , n- . aetevle yaisi ooae WSe monolayer in dynamics valley the gate repre- F3 and respectively. F2 filters F1, optical with senting setup, measurement rotation Kerr akdWSe marked I.1 a pia alyslcinrl o h exciton the for rule selection valley Optical WSe (a) monolayer in 1. FIG. hs ecndtc h alyplrzto nregardless in polarization valley the detect detected. sample then can is we the rotation Thus, Kerr in the index polarization, spin waves refractive with ampli- light different polarized equal with circularly two into with propagate The resolved waves phase. be light and tude can probe polarized polarized, The circularly linearly two excitation. injected is be light which can polarized beam, state, which circularly valley state, the certain spin by a exciton with of correlated polarization is the 1a, FIG. in pia eeto uei ooae TMDCs monolayer in rule selection optical relax- of development valley the the with uncover ahead to push valleytronics. order and excitons, in process of ation that needed, with still correlation are its and lifetime valley eew s h w-oo RRtcnqet investi- to technique TRKR two-color the use we Here 2 rbdb h w-oo ultrafast two-color the by probed hiZhang nhui 2 ooae ae c ktho h time-resolved the of Sketch (c) flake. monolayer addt o alyrnc application. valleytronics for candidate d ,tevle eaaintm fdifferent of time relaxation valley the s, s ee h xio alydnmc in dynamics valley exciton the Here, ls. 2 c ltomfrvle-pnrnc ex- valley-spintronics for platform ect soeodro antd ogrthan longer magnitude of order one is a) b pia irsoi mg fpre- of image microscopic Optical (b) . reo,i so ra motneto importance great of is it freedom, ainpoesi bevdt be to observed is process xation ehiu.B uigthe tuning By technique. r 44 2 ihthe With . sshown as 2 of the quantity of the nonequilibrium carriers. By tuning the probe photon energy in resonance with free exciton and trion respectively, the valley relaxation times of excitonic states in picosecond range at low temperatures are deduced. A relatively slow relaxation process of the residual valley polarization for trion is observed after the relaxation of neutral exciton states, suggesting that trion is a good candidate for valleytronics application.

I. EXPERIMENTAL SECTION

The WSe2 flakes are fabricated by the mechanical exfo- liation with adhesive tape from a bulk crystal (2D semiconductors Inc.) onto SiO2/Si substrates. Few-layer and monolayer WSe2 flakes were first identified by optical contrast under a microscope (see FIG. 1b), then verified via Raman83 and PL measurements, using the method presented in our previous work75. The steady-state PL is collected by a home-made micro-PL system based on a Horiba Jobin Yvon iHR550 spectrometer equipped with a Synapse Si CCD camera. For the circular polarization resolved experiment, the PL emission passes through a quarter wave plate and a beam-displacer for the s- and p-polarized components detection at the same time. The TRKR experiments are performed with the optical setup shown in FIG. 1c. The pump beam is fixed at 1.78 eV from a femtosecond pulsed laser (Chameleon, Coherent, Inc.) and the probe beam is chosen from a supercontinuum white light using two bandpass filters FIG. 2. (a) Normalized PL response of monolayer WSe2 at different temperatures. The dash lines show the temperature (TBP01-790 and FF01-747, Semrock, Inc.) with the dependent energy shifts of the exciton PL peaks. (b) PL band width less than ∼10 meV. The super continuum response and circular polarization degree of monolayer WSe2 white light is obtained from a nonlinear photonic crys- excited with pump photon energy of 1.78 eV at 9 K. The tal fiber (femotoWHITE-800, NKT Photonics) excited circular polarization degree is plotted in blue dots. by the Ti:sapphire laser with a temporal pulse width being approximately 150 fs. The pump and probe beams are focused onto the sample collinearly using an Olym- trion recombinations, respectively. The peak labelled as pus 50× objective. The spatial resolution is about 1.5 BX may be related to the biexciton recombination, which µm. The intensity of the pump and probe beam is kept locates about 53 meV lower than the free exciton emitting to be 100 µW and 20 µW during the experiment, re- energy at 9 K, in consistent with the previous report77. spectively. The pump beam is circularly polarized and Emission peaks at even lower energy originate from the is cut off by a long-wavelength pass filter (FF01-692/LP, bandtail state and are beyond the study scope here75. Semrock, Inc.) before being directed onto the photode- Whether the trions possess positive or negative excess tector. The probe beam is linearly polarized. A Wollas- charge is still yet to be determined. The trion bingding ton prism is used to separate the reflected probe beam energy is deduced to be 29 meV from the PL spectrum, into two orthogonally polarized components, which are which is in consistent with the previous work13,43, so that detected by a silicon balanced photodetector to achieve the trions can be well resolved at low temperatures and the weak Kerr rotation detection. All measurements are measurable even at room temperature. All the excitonic taken at low temperatures with the sample mounted in emission peaks show redshift with increasing tempera- a microscopy cryostat (Janis Research Company). ture, and the thermal quenching of the trion and biexciton emission is also observed. The well-resolved trion state in monolayer WSe2 at low temperature allows us II. RESULTS AND DISCUSSIONS to study its valley dynamics individually, which is quite different from the GaAs case whose binging energy is too 67,68 The PL spectra of monolayer WSe2 at different tem- small to be resolved using a femtosecond pulsed laser. peratures are shown in FIG. 2a, in which the excitonic The helicity-resolved PL measurement is investigated emission peaks are clearly resolved. The emission peak at 9 K. The monolayer WSe2 flake is excited at nor- labeled as FX and CX are related to the free exciton and mal incidence by a 1.78 eV laser beam with σ+ helic- 3 ity, while the PL with different circular helicities are col- results indicate that both the exciton and trion decay in lected separately55, as shown in FIG. 2b. (There’s some picosecond range, and could be fitted by bi-exponential difference between the lineshapes in FIG. 2a and FIG. 2b decay functions. The decay constants of the free exciton at the same temperature, because of the increased exci- are deduced to be about 7±1 ps and 15±4 ps, while the tation intensity used in the temperature dependent PL trion decays with two time constants of 8±0.5 ps and measurement.) The polarization degree of PL is calcu- 85±8 ps. It has to be noted that the deduced values of lated by the equation Pc = (I+ − I−)/(I+ + I−), where the decay constants depends on the experimental con- + − I+ and I− correspond to the PL intensity of σ and σ ditions such as the excitation power and photon energy components, respectively. The polarization degree for the which is beyond the scope of this work. The observed neutral excitons including the free exciton and biexciton decay process of excitons is the complex consequence of emission are evaluated to be nearly 40 percent, while the exciton recombination and the rapid exciton-exciton an- trion state possesses even higher valley polarization up nihilation according to the previous works79–81. to 50 percent. The steady-state PL results suggest that To further investigate the valley decay processes of dif- the trion state preserves the valley polarization more effi- ferent excitonic states, the TRKR measurement is per- ciently, thus being a more promising candidate for valley formed and the results are shown in FIG. 4. The pump 62 Hall experiment and future valleytronic applications . beam is fixed to be 1.78 eV and the probe beam energy is tuned to be in resonance with the free exciton and trion referring to the PL peak energy, respectively, same as the ∆R measurement. The Kerr rotation signal flips its sign as the pump beam helicity changes from σ+ to σ−, and no Kerr response can be distinguished when pumped by the linearly polarized light, as can be seen in FIG. 4a. This indicates that all the signals originate from the im- balanced exciton valley occupation. A monoexponential decay function is applied to fit the free exciton valley depolarization traces, and the decay time constant is deduced to be 4.1±0.2 ps at 10 K. This is in the same order of magnitude with the previously reported results60,61. The free A exciton valley depolarization time of ∼6 ps in monolayer WSe2 measured in a degenerate pump-probe geometry has been reported by 60 Zhu et al. , and in MoS2, valley relaxation time is 17 ps as reported by Plechinger et al.61. Our two-color TRKR results indicate that the exciton valley lifetime is shorter compared to the exciton lifetime obtained by the transient reflectance spectrum. It is noted that the measured valley lifetime by TRKR is shorter than that evaluated by the PL polarization degree results under cw laser excitation. This results from the strong dependence of valley lifetime on the optically excited exciton density under the femtosecond laser excitation, as discussed in our previous study55. A systematic temperature dependent TRKR is performed. The probe photon energy is tuned to be in reso- ∼ FIG. 3. (a) The spectra of the selected pump and probe nance with the temperature dependent (10 100 K) free laser beams, with the photon energy of probe beam tuned to exciton and trion emission energies, based on the results be resonant with the exciton and trion PL peaks (at 10 K), shown in FIG. 2a. It is seen that a general trend shows respectively, as indicated in the PL spectrum (bule curve). that the valley relaxation time decreases with increas- (b) The transient reflectance spectrum at 10 K measured at ing temperature, as shown in FIG. 4b, indicating an en- different probe photon energy, in resonance with FX (1.75 hanced valley relaxation process at higher temperatures. eV) and CX (1.72 eV), respectively. The solid lines are the This result is coincident with our previous PL results55, exponential decay fitting results. in which the polarization degree of PL decreases with increasing temperature. The Maialle-Silva-Sham (MSS) The transient differential reflectance (∆R) response of mechanism caused by the electron-hole (e-h) exchange the free exciton and trion state is then measured by tun- interaction13,55,60,63–65 has been proposed to be respon- ing the probe beam energy to be 1.75 eV and 1.72 eV at sible for the rapid exciton valley relaxation in mono- 10 K, being in resonance with the free exciton and trion layer TMDCs as theoretically pointed out in the previ- emission energy, respectively, as shown in FIG. 3a. The ous studies64,65. The long-range e-h exchange interac- 4

in which the energy transition is in the sub-picosecond range69. The neutral excitons thus act as a valley relaxation channel for trions. The slower valley decay process for trions suggests that there’s still residue carrier valley polarization after neutral exciton valley relaxation. The electron (hole) valley relaxation needs spin flips in addition to the intervalley scattering, which is expected to relax in a longer time than that of exciton as the MSS mechanism is absent. Several mechanisms may be responsible for the electron (hole) valley relaxation, in which spin relaxation is essen- tial, including D’yakonov-Perel’ (DP), Elliot-Yafet (EY) and Bir-Aronov-Pikus (BAP) mechanism as well as the hyperfine interaction and magnetic scatterings66. Here the hyperfine interaction can be ruled out since the electron wavefunction hardly overlaps with the nucleus’20. The magnetic scatters allow an electron to overcome the energy barrier of the large spin splitting in both the valence and conduction bands20. It has been evidenced that there exist magnetic scatters in TMDs72–74, but this is very unlikely to be the case for the studied WSe2 flake here, as no obvious Kerr response is observed when pumped by linearly polarized beam (see FIG. 4a). The spin relaxation time governed by the DP and EY mechanisms has previously been calculated to be in picosecond range. The spin relaxation time is suggested to decrease with increasing carrier density based on the nu- merically calculated results70,71,82. The EY mechanism FIG. 4. (a) The time-resolved Kerr rotation response mea- ought to be negligible for the spin relaxation in TMD ma- σ+ σ− sured at 10 K, with Kerr response pumped by and , terials because of the marginal spin mixing71. Previous respectively, while the grey dots is the Kerr rotation when the 64,76 sample is pumped by linearly polarized laser. The responses theoretical studies have suggested that DP mecha- of free exciton and trion are shown in different colors. (b) nism should also be negligible for spin flip along the out- The temperature dependent valley relaxation time, deduced of-plane direction as the mirror symmetry with respect from the time-resolved Kerr rotation traces, measured with to the plane of W atoms secures a zero out-of-plane crys- the probe beam energy tuned to be in resonance with the FX tal electric field. However, as a matter of fact, the mirror or CX emitting peak according to the PL spectra at different symmetry is actually broken since the surface roughness temperatures. of SiO2 substrates is usually as large as 4-8 A˚ as previously reported29, in addition to the possible morphology distortion due to the existence of absorbate or residue tion acts as a momentum-dependent effective magnetic glue. Thus it is very likely that there exists a spin-orbit field, in analogy to the spin-orbit coupling in GaAs spin coupling induced in-plane effective magnetic field, which relaxation66. The valley pseudospin of excitons with dif- opens an efficient spin relaxation channel as described by ferent center-of-mass momentums precess around the ef- the DP mechanism. The slow spin relaxation in nanosec- 78 fective magnetic field with different frequencies, leading ond range in monolayer MoS2 reported recently might to a free-induction decay as that of polarization relax- be the consequence of the protected mirror symmetry by ation induced by the inhomogeneous broadening caused the better sample crystallization quality grown by chem- by the randomly-orientated effective magnetic field. It ical vapor deposition. is thus expected to observe a shorter valley lifetime at The BAP mechanism could be enhanced compared higher temperatures, because of the enhanced e-h ex- to the III-V group semiconductors due to the enhanced change interaction. electron-hole coupling in 2D limit and the relatively high The valley relaxation for trions is more complicated, unintentional doping level20,70. So even with larger en- two decay time constants are deduced by fitting the ergy splitting in the valence band, the holes may possess TRKR valley depolarization trace with a biexponential similar valley lifetime with the electrons due to the BAP decaying function, being 6±0.2 ps and 123±5 ps at 10 mechanism, where the spin of a hole may be flipped by K, respectively. The fast decay constant is in the similar the exchange interaction with a conduction electron. magnitude with that of exciton in the whole measure- Detailed works such as substrate-engineered and dop- ment temperature range, suggesting that this fast process ing controlled trion valley dynamics are needed in the is related to the strong exciton-trion coherent coupling, future. 5

III. CONCLUSIONS pendence of radiative exciton lifetimes in quantum wells,” Phys. Rev. Lett. 59, 2337–2340 (1987). 11V. Huard, R. T. Cox, K. Saminadayar, A. Arnoult, and In conclusion, the valley dynamics of different exci- S. Tatarenko, “Bound states in optical absorption of semiconduc- tonic states including free excitons and trions in mono- tor quantum wells containing a two-dimensional electron gas,” 84 layer WSe2 is investigated by the two-color pump-probe Phys. Rev. Lett. , 187–190 (2000). 12 TRKR measurement. The valley relaxation times of exci- G. Finkelstein, V. Umansky, I. Bar-Joseph, V. Ciulin, S. Haacke, J.-D. Ganière, and B. Deveaud, “Charged exciton dynamics in tonic states are confirmed to be in picosecond range. The GaAs quantum wells,” Phys. Rev. B 58, 12637–12640 (1998). temperature dependent valley relaxation times for both 13A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. excitons and trions are observed to decrease with increas- Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, et al., “Optical ing temperature, following the dominated MSS mecha- generation of excitonic valley coherence in monolayer WSe2,” 8 nism caused by the e-h exchange interaction. The trion Nat. Nanotechnol. , 634–638 (2013). 14T. Korn, S. Heydrich, M. Hirmer, J. Schmutzler, and C. Schüller, state is found to be able to preserve the valley polariza- “Low-temperature photocarrier dynamics in monolayer MoS2,” tion more efficiently than the neutral exciton, thus being Appl. Phys. Lett. 99, 102109 (2011). more promising for valleytronics application. 15T. Kotani, M. van Schilfgaarde, and S. V. Faleev, “Quasiparticle self-consistent G W method: A basis for the independent-particle approximation,” Phys. Rev. B 76, 165106–165129 (2007). 16D. Lagarde, L. Bouet, X. Marie, C. R. Zhu, B. L. Liu, T. Amand, IV. ACKNOWLEDGEMENTS P. H. Tan, and B. Urbaszek, “Carrier and polarization dynamics in monolayer MoS2,” Phys. Rev. Lett. 112, 047401–047405 (2014). This work is supported by the National Natural Sci- 17X. D. Luo, Z. Y. Xu, W. K. Ge, Z. Pan, L. H. Li, and Y. W. ence Foundation of China (Nos. 11474276, 11274302, Lin, “Photoluminescence properties of a GaN0.015As0.985/GaAs 11225421, 11434010 and 11474277). We would like to single quantum well under short pulse excitation,” Appl. Phys. thank Dr. Hui Zhu on setting up the experimental com- Lett. 79, 958–960 (2001). 18 ponents. C. Mai, A. Barrette, Y. Yu, Y. Semenov, K. W. Kim, L. Cao, and K. Gundogdu, “Many body effects in valleytronics: Direct measurement of valley lifetimes in single layer MoS ,” Nano Lett. 1 2 Automatically placing footnotes into the bibliography requires 14, 202C206 (2013). using BibTeX to compile the bibliography. 19K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atom- 2S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. ically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Gutirrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, Lett. 105, 136805–136809 (2010). E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robin- 20K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley son, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, polarization in monolayer MoS2 by optical helicity,” Nat. Nan- M. Terrones, W. Windl, and J. E. Goldberger, “Progress, chal- otechnol. 7, 494–498 (2012). lenges, and opportunities in two-dimensional materials beyond 21K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and 7 graphene,” ACS Nano , 2898–2926 (2013). J. Shan, “Tightly bound trions in monolayer MoS ,” Nat. Mater. 3 2 G. Sallen, L. Bouet, X. Marie, G. Wang, C. R. Zhu, 12, 207–211 (2013). W. P. Han, Y. Lu, P. H. Tan, T. Amand, B. L. 22A. A. Mitioglu, P. Plochocka, J. N. Jadczak, W. Escoffier, G. L. Liu, and B. Urbaszek, “Robust optical emission polariza- J. A. Rikken, L. Kulyuk, and D. K. Maude, “Optical manipula- tion in MoS2 monolayers through selective valley excitation,” tion of the exciton charge state in single-layer tungsten disulfide,” 86 Phys. Rev. B , 081301–081304 (2012). Phys. Rev. B 88, 245403–245407 (2013). 4 I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, 23J. P. Perdew, K. Burke, and M. Ernzerhof, “Generalized gradient B. Monemar, H. P. Xin, and C. W. Tu, “Mechanism for approximation made simple,” Phys. Rev. Lett. 77, 3865–3868 low-temperature photoluminescence in GaNAs/GaAs structures (1996). 75 grown by molecular-beam epitaxy,” Appl. Phys. Lett. , 501– 24X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, 503 (1999). A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and 5T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichro- 115413–115420 (2013). 3 ism of monolayer molybdenum disulphide,” Nat. Commun. , 25D. Y. Qiu, H. Felipe, and S. G. Louie, “Optical spectrum of 887 (2012). MoS : Many-body effects and diversity of exciton states,” Phys. 6 2 Y.-H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Rev. Lett. 111, 216805–216809 (2013). Mishra, and S. P. DenBaars, “S-shaped temperature-dependent 26A. Ramasubramaniam, “Large excitonic effects in monolayers of emission shift and carrier dynamics in InGaN/GaN multiple molybdenum and tungsten dichalcogenides,” Phys. Rev. B 86, 73 quantum wells,” Appl. Phys. Lett. , 1370–1372 (1998). 115409–115414 (2012). 7 D. S. Citrin, “Radiative lifetimes of excitons in quantum wells: 27J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, 47 Localization and phase-coherence effects,” Phys. Rev. B , J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical 3832–3841 (1993). control of neutral and charged excitons in a monolayer semicon- 8 V. Ciulin, P. Kossacki, S. Haacke, J.-D. Ganière, B. Deveaud, ductor,” Nat. Commun. 4, 1474 (2013). A. Esser, M. Kutrowski, and T. Wojtowicz, “Radiative behav- 28J. S. Ross, P. Klement, A. M. Jones, N. J. Ghimire, J. Yan, M. G., ior of negatively charged excitons in CdTe-based quantum wells: T. Taniguchi, K. Watanabe, K. Kitamura, W. Yao, D. H. Cob- 62 A spectral and temporal analysis,” Phys. Rev. B , R16310– den, and X. Xu, “Electrically tunable excitonic light-emitting R16313 (2000). diodes based on monolayer WSe p-n junctions,” Nat. Nanotech- 9 2 C. Zhang, A. Johnson, C.-L. Hsu, L.-J. Li, and C.-K. Shih, “Di- nol. 9, 268–272 (2014). rect imaging of the band profile in single layer MoS2 on graphite: 29H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, Quasiparticle energy gap, metallic edge states and edge band J. Wu, and F. Peeters, “Anomalous raman spectra and thickness- 14 bending,” Nano Lett. , 2443 (2014). dependent electronic properties of WSe ,” Phys. Rev. B 87, 10 2 J. Feldmann, G. Peter, E. O. Göbel, P. Dawson, 165409–165414 (2013). K. Moore, C. Foxon, and R. J. Elliott, “Linewidth de- 6

30D. Sanvitto, R. Hogg, A. Shields, D. Whittaker, M. Simmons, variations and spin-valley coupling in atomically thin tungsten D. Ritchie, and M. Pepper, “Rapid radiative decay of charged dichalcogenides,” Sci. Rep. 3, 1608 (2013). excitons,” Phys. Rev. B 62, R13294–R13297 (2000). 50Y. Zhang, T.-R. Chang, B. Zhou, Y.-T. Cui, H. Yan, Z. Liu, 31H. Shi, R. Yan, S. Bertolazzi, J. Brivio, B. Gao, A. Kis, D. Jena, F. Schmitt, J. Lee, R. Moore, Y. Chen, H. Lin, H.-T. Jeng, S.-K. H. G. Xing, and L. Huang, “Exciton dynamics in suspended Mo, Z. Hussain, A. Bansil, and Z.-X. Shen, “Direct observation monolayer and few-layer MoS2 2d crystals,” ACS Nano 7, 1072– of the transition from indirect to direct bandgap in atomically 1080 (2013). thin epitaxial MoSe2,” Nat. Nanotechnol. 9, 111–115 (2013). 32E. J. Sie, A. J. Frenzel, Y.-H. Lee, J. Kong, and N. Gedik, “In- 51W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, tervalley biexcitons and many-body effects in monolayer MoS2,” and G. Eda, “Evolution of electronic structure in atomically thin Phys. Rev. B 92, 125417–125424 (2015). sheets of WS2 and WSe2,” ACS Nano 7, 791–797 (2012). 33S. Sim, J. Park, J.-G. Song, C. In, Y.-S. Lee, H. Kim, and 52Y. Zhao, X. Luo, H. Li, J. Zhang, P. T. Araujo, C. K. Gan, H. Choi, “Exciton dynamics in atomically thin MoS2: Interex- J. Wu, H. Zhang, S. Y. Quek, M. S. Dresselhaus, and Q. Xiong, citonic interaction and broadening kinetics,” Phys. Rev. B 88, “Interlayer breathing and shear modes in few-trilayer MoS2 and 075434–075438 (2013). WSe2,” Nano Lett. 13, 1007–1015 (2013). 34A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, 53Z. Zhu, Y. Cheng, and U. Schwingenschlögl, “Giant spin- G. Galli, and F. Wang, “Emerging photoluminescence in mono- orbit-induced spin splitting in two-dimensional transition-metal layer MoS2,” Nano Lett. 10, 1271–1275 (2010). dichalcogenide semiconductors,” Phys. Rev. B 84, 153402– 35B. Stebe and A. Ainane, “Ground state energy and optical ab- 153406 (2011). sorption of excitonic trions in two dimensional semiconductors,” 54G. Kioseoglou, A. Hanbicki, M. Currie, A. Friedman, D. Gunly- Superlattices Microstruct. 5, 545–548 (1989). cke, and B. Jonker, “Valley polarization and intervalley scatter- 36 R. Sundaram, M. Engel, A. Lombardo, R. Krupke, A. Ferrari, ing in monolayer MoS2,” Appl. Phys. Lett. 101, 221907 (2012). P. Avouris, and M. Steiner, “Electroluminescence in single layer 55T. Yan, X. Qiao, P. Tan, and X. Zhang, “Valley depolarization MoS2,” Nano Lett. 13, 1416–1421 (2013). in monolayer WSe2,” Sci. Rep. 5, 15625 (2015). 37S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, 56C. Mai, A. Barrette, Y. Yu, Y. G. Semenov, K. W. Kim, L. Cao, J. C. Grossman, and J. Wu, “Thermally driven crossover from and K. Gundogdu, “Many-body effects in valleytronics: Direct indirect toward direct bandgap in 2d semiconductors: MoSe2 measurement of valley lifetimes in single-layer MoS2,” Nano Lett. versus MoS2,” Nano Lett. 12, 5576–5580 (2012). 14, 202–206 (2014). 38S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, 57N. Kumar, J. He, D. He, Y. Wang, and H. Zhao, “Val- C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. ley and spin dynamics in MoSe2 two-dimensional crystals,” Grossman, and J. Wu, “Defects activated photoluminescence Nanoscale 6, 12690–12695 (2014). in two-dimensional semiconductors: interplay between bound, 58Q. Wang, S. Ge, X. Li, J. Qiu, et al., “Valley carrier dynamics in charged, and free excitons,” Sci. Rep. 3, 2657 (2013). monolayer molybdenum disulfide from helicity-resolved ultrafast 39P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner, pumpcprobe spectroscopy,” ACS Nano 7, 11087–11093 (2013). A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D. R. Zahn, S. M. d. 59C. Mai, Y. G. Semenov, A. Barrette, Y. Yu, Z. Jin, L. Cao, Vasconcello, and R. Bratschitsch, “Photoluminescence emission K. W. Kim, and K. Gundogdu, “Exciton valley relaxation and raman response of monolayer MoS2, MoSe2, and WSe2,” in a single layer of WS2 measured by ultrafast spectroscopy,” Opt. Express 21, 4908–4916 (2013). Phys. Rev. B 90, 041414–041419 (2014). 40M. van Schilfgaarde, T. Kotani, and S. Faleev, “Quasiparticle 60C. R. Zhu, K. Zhang, M. Glazov, B. Urbaszek, T. Amand, Z. W. self-consistent G W theory,” Phys. Rev. Lett. 96, 226402–226405 Ji, B. L. Liu, and X. Marie, “Exciton valley dynamics probed (2006). by kerr rotation in WSe2 monolayers,” Phys. Rev. B 90, 161302– 41R. Wang, B. A. Ruzicka, N. Kumar, M. Z. Bellus, H.-Y. Chiu, 161306 (2014). and H. Zhao, “Ultrafast and spatially resolved studies of charge 61G. Plechinger, P. Nagler, C. Schüller, and T. Korn, “Time- carriers in atomically thin molybdenum disulfide,” Phys. Rev. B resolved kerr rotation spectroscopy of valley dynamics in single- 86, 045406–045410 (2012). layer MoS2,” arXiv:1404.7674 (2014). 42Q. Wang, S. Ge, X. Li, J. Qiu, Y. Ji, J. Feng, and D. Sun, “Val- 62K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley ley carrier dynamics in monolayer molybdenum disulfide from hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014). helicity-resolved ultrafast pump-probe spectroscopy,” ACS Nano 63M. Maialle, E. d. A. e Silva, and L. Sham, “Exciton spin dynam- 7, 11087–11093 (2013). ics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993). 43G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, 64T. Yu and M. W. Wu, “Valley depolarization due to intervalley T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics and intravalley electron-hole exchange interactions in monolayer probed through charged and neutral exciton emission in mono- MoS2,” Phys. Rev. B 89, 205303–205309 (2014). 65 layer WSe2,” Phys. Rev. B 90, 075413–075418 (2014). M. M. Glazov, T. Amand, X. Marie, D. Lagarde, L. Bouet, 44D. Xiao, W. Yao, and Q. Niu, “Valley-contrasting physics in and B. Urbaszek, “Exciton fine structure and spin deco- graphene: magnetic moment and topological transport,” Phys. herence in monolayers of transition metal dichalcogenides,” Rev. Lett. 99, 236809–236812 (2007). Phys. Rev. B 89, 201302–201306 (2014). 45D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled spin 66M. Wu, J. Jiang, and M. Weng, “Spin dynamics in semiconduc- and valley physics in monolayers of MoS2 and other group-VI tors,” Phys. Rep. 493, 61–236 (2010). dichalcogenides,” Phys. Rev. Lett. 108, 196802–196806 (2012). 67V. V. Solovyev and I. V. Kukushkin, “Measurement of bind- 46 W. Yao, D. Xiao, and Q. Niu, “Valley-dependent optoelectronics ing energy of negatively charged excitons in GaAs/al0.3ga0.7As from inversion symmetry breaking,” Phys. Rev. B 77, 235406– quantum wells,” Phys. Rev. B 79, 233306–233309 (2009). 235412 (2008). 68A. Esser, E. Runge, R. Zimmermann, and W. Langbein, “Trions 47W. S. Yun, S. Han, S. C. Hong, I. G. Kim, and J. Lee, “Thick- in gaas quantum wells: Photoluminescence lineshape analysis,” ness and strain effects on electronic structures of transition metal Physica Status Solidi (a) 178, 489–494 (2000). 69 dichalcogenides: 2H-MX2 semiconductors (M= Mo, W; X= S, A. Singh, G. Moody, S. Wu, Y. Wu, N. J. Ghimire, Se, Te),” Phys. Rev. B 85, 033305–033309 (2012). J. Yan, D. G. Mandrus, X. Xu, and X. Li, “Co- 48 H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polariza- herent electronic coupling in atomically thin MoSe2,” tion in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. Phys. Rev. Lett. 112, 216804–216808 (2014). 7, 490–493 (2012). 70H. Ochoa and R. Roldán, “Spin-orbit-mediated spin relaxation 49 H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, in monolayer MoS2,” Phys. Rev. B 87, 245421–245428 (2013). X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry 7

71 L. Wang and M. W. Wu, “Electron spin relaxation due spin coherence of electrons in monolayer MoS2 and WS2,” Nat. to D’yakonov-Perel’ and Elliot-Yafet mechanisms in mono- Phys. 11, 830–834 (2015). 79 layer MoS2: Role of intravalley and intervalley processes,” D. Sun, Y. Rao, G. A. Reider, G. Chen, Y. You, L. Brézin, A. R. Phys. Rev. B 89, 115302–115308 (2014). Harutyunyan, and T. F. Heinz, “Observation of rapid exciton– 72H. Pan and Y.-W. Zhang, “Edge-dependent structural, exciton annihilation in monolayer molybdenum disulfide,” Nano electronic and magnetic properties of MoS2 nanoribbons,” lett. 14, 5625–5629 (2014). J. Mater. Chem. 22, 7280–7290 (2012). 80L. Yuan and L. Huang, “Exciton dynamics and annihilation in 73 A. Vojvodic, B. Hinnemann, and J. K. Nørskov, “Magnetic edge WS2 2d semiconductors,” Nanoscale 7, 7402–7408 (2015). 81 states in MoS2 characterized using density-functional theory,” C. Pöllmann, P. Steinleitner, U. Leierseder, P. Nagler, Phys. Rev. B 80, 125416–125426 (2009). G. Plechinger, M. Porer, R. Bratschitsch, C. Schüller, T. Korn, 74S. Tongay, S. S. Varnoosfaderani, B. R. Appleton, J. Wu, and and R. Huber, “Resonant internal quantum transitions and fem- A. F. Hebard, “Magnetic properties of MoS2: Existence of ferro- tosecond radiative decay of excitons in monolayer WSe2,” Nat. magnetism,” Appl. Phys. Lett. 101, 123105 (2012). mater. 14, 889–893 (2015). 75T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photolumi- 82Y. Song and H. Dery, “Transport theory of monolayer transition- nescence properties and exciton dynamics in monolayer WSe2,” metal dichalcogenides through symmetry,” Phys. Rev. Lett. 111, Appl. Phys. Lett. 105, 101901 (2014). 026601–026605 (2013). 76B. Zhu, H. Zeng, J. Dai, Z. Gong, and X. Cui, “Anomalously 83X.-F. Qiao, X.-L. Li, X. Zhang, W. Shi, J.-B. Wu, T. Chen, robust valley polarization and valley coherence in bilayer WS2,” and P.-H. Tan, “Substrate-free layer-number identification of PNAS 111, 11606–11611 (2014). two-dimensional materials: A case of Mo0.5W0.5S2 alloy,” Appl. 77Y. You, X.-X. Zhang, T. C. Berkelbach, M. S. Hybertsen, D. R. Phys. Lett. 106, 223102 (2015). Reichman, and T. F. Heinz, “Observation of biexcitons in monolayer WSe2,” Nat. Phys. 11, 477–481 (2015). 78L. Yang, N. A. Sinitsyn, W. Chen, J. Yuan, J. Zhang, J. Lou, and S. A. Crooker, “Long-lived nanosecond spin relaxation and