Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Cheng-Wei Lee, Adele Tamboli, and Vladan Stevanovi´c∗ Colorado School of Mines, Golden, CO 80401, USA and National Renewable Energy Laboratory, Golden, CO, 80401, USA

Meenakshi Singh Colorado School of Mines, Golden, CO 80401, USA

Semiconductors offer a promising platform for the physical implementation of qubits, demon- strated by the successes in quantum sensing, computing, and communication. The broad adoption of semiconductor qubits is presently hindered by limited scalability and/or very low operating tem- peratures. Learning from the NV− centers in diamond, whose optical properties enable high oper- ating temperature, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Mo- tivated by the fact that transition metal impurities in silicon typically produce deep carrier trapping centers, we apply first-principles methods to investigate electronic and optical properties of these deep-level defects and subsequently examine their potential for Si-based qubits. We identify nine transition metal impurities that have optically allowed triplet-triplet transitions within the Si band gap, which could be considered candidates for a Si-based qubit. These results provide the first step toward Si-based qubits with higher operating temperatures and spin-photon interfaces for quantum communication.

INTRODUCTION erties offer a natural spin-photon interface suitable for quantum communication. The NV− centers have been Quantum information science has drawn a lot of at- shown to achieve quantum communication at a distance 12 tention in the past few decades due to its potential to over one kilometer , but are ultimately limited by the transform how information is collected, processed, and strong attenuation of their 637-nm light through optical 13 transmitted1–3. Recent developments focus on the phys- fiber . Optically-addressable point defects in general ical realization of qubits4, in which quantum informa- meet the criteria for quantum computing, but the proba- tion is encoded. Semiconductor qubits are among the bilistic nature of where the defects are created limits the 13 promising systems as demonstrated by the successes in scalability, which is essential for quantum computing . 31 quantum sensing5,6, quantum computing7–10, and quan- P in Si currently has the longest reported decoherence tum communication11,12. time for an electron spin in a semiconductor qubit (≈ 15 To realize a qubit, a quantum two-level system whose few seconds) . The even longer decoherence time for 15 levels can be initialized, coherently controlled and mea- nuclear spin (>10 s) makes such systems relevant for sured with high fidelity is needed13. For semiconduc- the storage of quantum information, i.e. quantum mem- 31 tors, three major qubit types are discussed13:(i) gate- ories. However, low temperatures (<10 K for P in Si) controlled nanostructures, (ii) shallow dopants in silicon, are required. and (iii) optically-addressable point defects such as NV− Among practical considerations, scalability and op- centers in diamond, a negatively charged defect complex erating temperature stand out as the major challenges between substitutional nitrogen impurity and an adja- for semiconductor qubits13. The mature manufactur- cent carbon vacancy. All these qubit types aim to iso- ing techniques for Si-based devices makes Si an attrac- late a charge or spin from the semiconductor host and tive host material but the extremely low operating tem- thus form the required quantum two-level systems. Their perature is a major concern. Besides, silicon-based im- performances are benchmarked against different quan- plementations currently lack established spin-photon in- tum applications and each has their unique strengths and terfaces, which is critical for application in quantum weaknesses.13 communication13,16,17 On the other hand, NV− centers − arXiv:2105.05927v1 [cond-mat.mtrl-sci] 12 May 2021 NV centers in diamond and neutral (and shallow) in diamond operate at room temperature, but scaling- 31P impurities in crystalline Si are exemplary systems up for diamond-based devices remains challenging. Con- for optically-addressable point defects and long coher- sidering the advantages of both systems, one potential ence times, respectively. The NV− centers have been approach to address the challenge is to find a NV− cen- demonstrated to work even at room temperature, which ter like defect system in silicon. Specifically, resembling is critical for quantum sensing14. Also, their optical prop- NV− centers in diamond, we are searching for deep cen- ters that can accommodate optical triplet-triplet transi- tions within the Si band gap. Color centers were rarely observed for silicon due to ∗ [email protected] its small electronic band gap. A recent review summa- 2 rizes the known color centers, including 77Se+, Er3+, and tational approach to evaluate defect formation energies, three color centers associated with particle irradiation17. thermodynamic charge transition levels (CTL), and one- Among these color centers, Durand et al. recently demon- particle defect-level diagrams (DLD) for each TM as a strated a single photon emitter in silicon for the first time substitutional, and an interstititial point defect in crys- using C-doped Si16. The single photon emitter is cur- talline Si, as well as a Si-vacancy/TM-substitutional de- rently associated with the G-center, which is most likely fect complex. Substitutional and interstitial point de- a defect complex made up of two substitutional C atoms fects are the most common extrinsic defect types and and one Si interstitial16. But currently, no color centers vacancy complexes are widely found as color centers in in silicon were found for the same triplet-triplet optical other wide band gap host materials such as NV− cen- transitions as NV− centers in diamonds. Motivated by ters in diamond. We also calculate optical absorption the established knowledge that transition metals gener- spectra to verify that the in-gap optical transitions are ally form deep-level defects in silicon, we aim to investi- allowed. Using the selection criteria discussed later in gate their optical properties and potential for qubits. details, we identify five substitutional and four intersti- tial TM defects in silicon depicted at the bottom of Fig. Search space 1. While further investigations into their optical proper- ties and spin dynamics are required, our discovery is the first step toward Si-based qubits with higher operating temperature and spin-photon interface.

Si RESULTS

Interstitial site In search of candidate Si-host-defect system with Defect triplet-triplet optical transition within the Si band gap, calculations Substitutional Fig. 1 summarizes our computational approach. For ev- site ery defect, we employ the defect calculations and com- Vacancy pute the thermodynamic charge transition level (CTL) that can be readily extracted from the defect formation energies (see Fig. S1 in SM for the explicit data). CTLs 2 or more charge transition levels represent values of the Fermi energy at which a given de- fect changes its charge state, i.e. as the EF increases the Spin triplet ground and excited states electrons will be transferred from the Fermi sea to the available empty (and localized) defect states which will render the defect itself more negatively charged. Gener- Optical transitions allowed ally speaking, CTLs provide a guideline how to achieve targeted defect charge states by tuning Fermi energy. This can be done via doping or electrical gating and the latter is preferred for semiconductor qubits in or-

(+1) (+1) (-1) (0) (0) der to avoid charge or spin noises introduced by dopants. CTLs are also useful as they determine the number of (0,+2) electrons present in mid-gap defect states as a function

(0) (+1) of the Fermi energy and are thus helpful in revealing the potential triplet-triplet optical transitions within the Si band gap. FIG. 1. Workflow adopted in our search for transition metal impurities in crystalline Si. The search space con- For a given impurity defect in Si to accommodate both sists of all 3d and select 4d and 5d transition metals (shown a triplet electronic ground state and a triplet excited at the top). Defect calculations then enable reducing the set state with the excitation energy within the band gap of using various search criteria, leading to the identification of 9 the host material, the following conditions need to be candidate impurities as interstitials and substitutional defects met. First, there has to be a range of Fermi energies (shown at the bottom with specific charge state). within which a spin-triplet electronic configuration is sta- ble. Consequently, there has to be at least one CTL that Specifically, we investigate the whole 3d and few se- will describe discharging the corresponding one-electron lected heavier transition metals (TM), as highlighted in states (two orbital states at minimum). Second, for the Fig. 1. Heavier transition metals are chosen based on the same Fermi energy range there have to exist empty elec- potential for ion implantation18,19 and literature search tronic states within the band gap and in the same spin on defect levels20,21. Fig. 1 also shows the general work- channel. These need to be separated in energy from flow we developed and adopted to identify promising the occupied ones so that a triplet-triplet optical transi- candidates. We utilize the present state-of-art compu- tions with non-zero photon energy are possible. This also 3 means that there has to exist at least one more CTL as- (a) 2b -1 CoSi sociated with charging of those empty states. Hence, the 1.16 CB triplet-triplet transition necessitates at least two CTLs 1.0 2b within the band gap, which is the first selection criterion 0.8 1b we are using in our workflow. 0.6 (eV)

F 0.4 1b Next, because CTLs have no direct information about E a 0.2 the spin configuration, we further examine the single- a particle defect-level diagram of the candidates. Aiming 0.0 VB for triplet-triplet transitions within the Si band gap, we search for stable defects with triplet ground state, i.e. 106 a → 2b

) x two unpaired electrons, and at least one empty state in 1 104 1b → 2b the same spin channel within the band gap. One of the y 2 z unpaired electrons can be promoted to the empty state(s) (cm 10 and form the triplet excited state. In addition, we use 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 the charge density of corresponding defect states to deter- Photon energy (eV) mine the symmetry of the electronic orbitals and confirm that the single-particle states within the band gap are lo- (b) 3 0 22 ZnSi calized. Localized spin defect states are required and 1.16 CB symmetries provide the foundation to estimate whether 1.0 the optical transitions are allowed. Lastly, because the 0.8 2 symmetry provides no information about the actual val- 0.6 3 (eV) 2 F 0.4 ues of the amplitudes (oscillator strengths) of allowed op- E tical transitions, we calculate the one-particle absorption 0.2 1 1 coefficient to verify that the specific triplet-triplet opti- 0.0 cal transitions are indeed allowed and to estimate their VB brightness. 106 1→2

) x 1 4 1→3 10 y

2 z Substitutional Defect Candidates (cm 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Photon energy (eV)

FIG. 3. Single-particle defect level diagram and ab- sorption spectra for representative substitutional de- −1 fects of transition metals. (a) CoSi has C2 symmetry 0 while (b) ZnSi has no symmetry. The numbers are used to distinguish different defect states while letters highlight their symmetries. The isosurface plots of the charge density of cor- FIG. 2. Thermodynamics charge transition levels responding defect states are shown at the density of 0.0025 1 for substitutional defects of transition metals. Semi- 3 . Absorption coefficient (α) are provided, with specific aB transparent gray areas highlight the Fermi-level range for the peaks indicated for the corresponding transitions between la- final candidates with triplet-triplet optical transitions within beled defect states within the band gap. x, y, and z indicate the Si band gap to be stable. 0, +, and − signs indicate the the polarization direction. All the other substitutional defect dominant charge state within the Fermi-level range. 0 0 +1 candidates (NiSi, PtSi, and AuSi ), which also have in-gap triplet-triplet optical transitions, can be found in the Supple- We first look at the substitutional defects for the tran- mental Materials. sition metals in silicon. Fig. 2 shows their thermody- namic charge transition levels within the silicon band gap (The results of defect formation energies can be found in the stable charge states shown in Fig. 2. Since triplet- the SM). Applying the the criteria of at least two CTLs triplet optical transitions are desired, we also used the leaves seven candidate systems: ScSi, CoSi, NiSi, CuSi, single-particle diagram to determine if there are any spin ZnSi, PtSi, and AuSi. triplet excited states within the band gap. ScSi is fur- Next, we search for the defect systems with stable ther disqualified since it has no spin-triplet excited states spin triplet ground states, i.e. having stable charge state available within the band gap. within the band gap and spin state of S=1. For this pur- Fig. 3 shows the electronic single-particle levels dia- −1 pose, we analyze the single-particle level diagrams (see gram for two of the final list of candidates, CoSi and 0 Fig. 3) in addition to CTLs. This criterion disqualifies ZnSi (see Fig. S2 in SM for all the substitutional de- CuSi because it has no triplet ground state for any of fect candidates). Fig. 3(a) and (b) clearly show the spin 4 triplet ground state with either two up spins or three up spins compensated by one down spin, respectively. The spin triplet excited states can be achieved when one of the up or down spins was excited under spin-conservation transition for the case of two up spins or three up spins compensated by one down spin, respectively. Besides, we also remove candidates with defect levels that are too close to the band edge (∆E < 0.05 eV) since electrons on FIG. 4. Thermodynamics charge transition levels for these defect levels can be easily thermally excited. The tetrahedral interstitial defects of transition metals. optical transitions between defect levels and band edges Semi-transparent gray areas highlight the Fermi-level range also compete with transition between in-gap defect lev- for the final candidates with triplet-triplet optical transitions els, giving rise to optical signals that are too close to within the Si band gap to be stable. 0, +, and − signs indicate distinguish. We further confirm the localization of those the dominant charge state within the Fermi-level range. mid-gap defect levels by visualizing their charge density (see Fig. 3). These charge densities also support the sym- metry determination for the defect based on atomic con- figurations. For the candidates without symmetry, e.g. Here we focus only on interstitial defects at tetrahedral Fig. 3(b), we can clearly see the distortion from mirror sites since, for transition metals, they generally have the or rotation symmetry. lowest energies among all the interstitial defect sites21,24. We further calculate the one-particle optical absorp- Applying the same selection procedure as substitutional tion coefficient for these five candidates (see bottom sub- defects, we first look at the CTL for interstitial defects figures in Fig. 3(a) and (b)), in order to verify that the as shown in Fig. 4. The criteria of at least two transition optical triplet-triplet transitions are not only symmetry levels reduces the candidate list to Sci, Tii,Vi, Cri, Zni, allowed but also bright. We focus on the photon energy Zri, and Aui. After examining for spin triplet electronic range within the silicon band gap since we are searching configuration within the stable charge states, we drop Zni for in-gap optical transitions. The first strong peaks are out of the list due to its lack of the spin triplet configu- related to the triplet-triplet transitions for all the candi- ration for Fermi energy within the band gap. A practical dates while the rest of the peaks are associated with tran- constraint of having one-electron levels sufficiently away sition between band edge states and the mid-gap defect from the band edges (∆E < 0.05 eV) further removes states. Also, the absorption coefficient for all first peaks Tii and Cri from the list. Fig. 5 shows the single-particle reaches ∼103-104 cm−1, suggesting relatively bright tran- defect level diagram, localized charge densities and the sitions. The locations of these peaks that are associated optical absorption spectra for two of the final four can- +1 0 with the in-gap triplet-triplet transitions are within the didates, Sci and Zri (see Fig. S3 for all the interstitial photon energy range of 0.4 - 0.6 eV (≈ 3100 - 2066 nm). defect candidates). The single-particle diagrams show 3 Unlike NV- center in diamond (≈ 637 nm23), these opti- that all of them have the A2 triplet ground state, i.e. cal transitions are located at the opposite end of the op- two unpaired electrons both on e orbitals (see Fig. 5 and +1 tical fiber attenuation, with the signal loss dominated by Fig. S3). Taking Sci as example, the spin triplet ex- silica infrared absorption13. While the calculated transi- cited states, 3E, forms when one of the up spin is excited 0 tions suggest longer wavelength than the optimal operat- from the e orbital to the a1 orbital. Similarly for Zri , ing bands, our results nonetheless predict candidates that 3E state forms when the down spin is promoted from can serve as spin-photon interfaces. Optical transitions a1 to e orbitals. These interstitial defect systems closely of ∼1 eV is desirable for the application of quantum com- resemble the NV center in diamond, which has C3v sym- 3 3 25 munication to minimize attenuation loss in optical fiber. metry and A2 - E transitions . Charge densities show However, limited by the Si band gap of ∼1.2 eV, in-gap the C3 symmetry along the principle axis, i.e. <111>, states that give rise to optical transitions close to 1 eV consistent with the symmetry identified based on local are inevitably close to Si band edges. Close proximity defect configuration. The absorption spectra show that of defect levels to Si band edges requires lower operating the triplet-triplet optical transitions are allowed as shown temperature to maintain the fidelity of the spin state. by the first peaks. Similar to substitutional defects, the Therefore, for design perspective of optically addressable first peaks fall on the range between 0.4 to 0.6 eV and point defects in Si, the trade-off between operating tem- are far enough from other peaks. perature and photon wavelength should be considered. In addition to substitutional and interstitial defects, we also investigate the (SiV+TMSi) defect complex for all the transition metals studied in this manuscript. We find Interstitial Defect Candidates that there are no viable candidates with optical triplet- triplet transitions within the Si band gap, using the same Interstitial sites are also very common for transition work flow. They all share a similar trend that the local- metal impurities in silicon. Two kinds of interstitials ex- ized defect states are generally within the silicon band ist, those that have tetrahedral or hexagonal symmetry. edges, preventing practical optical applications. 5

(a) 2e +1 (a) Sci CB AuSi 1.16 2e 4.0 CoSi 1.0 a1 NiSi

a1 0.8 3.2 PtSi 0.6 1e ZnSi (eV) 0 F 0.4 2.4 (VSi AuSi) E (eV) +1 0.2 (VSi CoSi) 1e 1.6 0 (VSi NiSi) 0.0 D, q VB H (VSi PtSi) 0.8 -1 (VSi ZnSi) 6 VSi 10 0

) x 1 4 → 0.0 10 y 1e a1

2 z (cm 10 0.8 0.0 0.2 0.4 0.6 0.8 1.0 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 EF (eV) Photon energy (eV) (b) 3.2 Sci, tet (b) 2e Zri, tet 0 Zri 2e CB 0 V 1.16 2.4 i, tet 0 Co 1.0 1e +1 i, tet Nii, tet 0.8 1e 1.6 0 +1 +2 Pti, tet 0.6 (eV) +1 Aui, tet (eV) a1 F 0.4 Zni, tet D, q E 0.8 -1 0 0.2 H ScSi a1 0.0 0.0 ZrSi VB VSi CoSi 106 0.8 NiSi

) x PtSi 1 104 a1 → 1e y 0.0 0.2 0.4 0.6 0.8 1.0 AuSi 2 z ZnSi (cm 10 EF (eV)

100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Photon energy (eV) FIG. 6. Defect formation energy for candidate defects and their potential competing defects Comparison be- tween (a) candidate substitutional defects and the vacancy FIG. 5. Single-particle defect level diagram and ab- complex counterparts and (b) candidate substitutional and sorption spectra for representative interstitial defects +1 0 interstitial defects are shown. The number indicates the domi- of transition metals. Both (a) Sci and (b) Zri have nant charge state at a given Fermi energy range and highlights the C3v symmetry. Numbers are used to distinguish different the charge states of the candidate substitutional and intersti- defect states while letters highlight their symmetries. The tial defects. Note that the intermediate compounds are not isosurface plots of the charge density of corresponding defect 1 considered here, i.e., total energies of the reference element states are shown at the density of 0.0025 3 and along the aB states are used for the chemical potentials. principle axis of the C3 rotation, i.e. <111>. Absorption co- efficient (α) are provided, with specific peaks indicated for the corresponding transitions between labeled defect states within the band gap. x, y, and z indicate the polarization direction. subsititutional defects (indicated by their specific charge +2 +1 All the other interstitial defect candidates (Zri and Vi ), state), their competing silicon-vacancy-complex counter- which also have in-gap triplet-triplet optical transitions, can parts have significantly higher formation energies, except be found in the Supplemental Materials. 0 0 for PtSi. This suggests that, except for PtSi, the sub- stitutional defects would have significantly higher defect concentration than their silicon-vacancy-complex coun- Defect Formation Energetics 0 terparts. But for PtSi, careful tuning of Fermi level is required to ensure that its formation energy is lower than An extrinsic chemical element can occupy different de- its silicon-vacancy-complex counterpart. Because of the fect sites and their relative abundances are important for focus on ion implantation as the means to produce the the deterministic creation of the defects. Candidate de- defects, Fig. 6 neglects the effect of intermediate com- fects that occupy the sites of the lowest defect formation pounds on the chemical potential term shown in eq. (1) energy are easier to create. but the relative position of the defect formation ener- First, we compare the defect formation energies of gies and thus the discussion above nonetheless remain the the subsitutional defects with their Si-vacancy-complex same. To be more specific, under the Si-rich condition, counterparts. Fig. 6(a) shows that for the candidate considering intermediate compounds will only change the 6

chemical potential term for transition metals, which will s 0 (a) ZnSi 200 p change in the same way for both substitutional defect d and the complex leaving the difference in the formation 0 energy unchainged. 200 Next, we compare defect formation energies of the sub- DOS Projected stitutional defect candidates to the values of their in- 6 4 2 0 2 4 6 8 10 terstitial counterparts and vice versa. Fig. 6(b) shows Kohn Sham energy (eV) the defect formation energies for candidate substitutional s +1 (b) Sci and interstitial transition metals in silicon (highlighted 200 p by their stable charge state). For the five substituional d −1 0 0 +1 0 0 defect candidates, CoSi , NiSi, PtSi, AuSi , and ZnSi, within the Fermi energy range at which their relevant 200 +1 0 DOS Projected charge states are stable, we find that AuSi and PtSi have significantly lower formation energies than their intersti- 6 4 2 0 2 4 6 8 10 tial counterparts. This suggests that they are the dom- Kohn Sham energy (eV) inant defect types against the interstitial ones. On the −1 0 FIG. 7. Projected density of state (PDOS) for tran- other hand, CoSi and NiSi have much higher formation energies than their interstitial counterparts. This indi- sitional metal atoms. PDOS for transition metals in rep- cates, at equilibrium, they are harder to create compared resentative (a) substitutional and (b) interstitial candidate to their interstitial counterparts, but not necessarily rule defect systems are compared with density of state of bulk Si (shown by semi-transparent filled curve). The magnitude of them out from the candidate list. Unlike the rest, Zn0 Si PDOS are amplified 40 times in order to emphasize the lo- has similar formation energies to its interstitial counter- cation. Gray vertical dashed lines highlight the position of part, suggesting that it requires fine tune of Fermi level valence band maximum and conduction band minimum after in order to be the dominant defect. Similarly, we com- potential alignment. pare the defect formation energies of four interstitial de- +1 0 +2 +1 fect candidates (Sci , Zri , Zri , and Vi ) to those of their substitutional counterparts. We find that they all tional defect candidates (see Fig. 7(a) as example), there have lower formation energies than their substitutional are sixteen electrons that need to be accommodated when counterparts, suggesting less complexity of creating these 0 a ZnSi defect is created: Zn has twelve valence electrons candidate interstitial defects. and the Si dangling bonds provide four electrons. Given that outermost s and d orbitials of Zn (black and red curves in Fig. 7(a), respectively) are deep below the va- DISCUSSION lence band maximum, twelve of the sixteen electrons fill these states, with four remaining electrons available to Emerging Trends occupy the defect states within the band gap. As shown repetitively in Fig. 3 and 5, a triplet ground state re- In this paper, among the 3d and selected transition quires either two or four electrons within the band gap. 0 metals, we discover five substitutional and four intersti- For ZnSi, as shown in Fig. 3(b), we indeed have four tial defects in silicon, which have triplet-triplet optical electrons within the Si band gap, with three up spins +2 transitions within the Si band gap. As highlighted in and one down spin. Following the same procedure, ZnSi Fig. 1, we notice a general trend that these subsitutional could be a plausible candidate but Fig. 2 shows that the defect candidates are all located at the right side of the charge state of +2 is not stable within the band gap. Sim- periodic table for transitional metals while these intersti- ilarly, all the transition metals at the Zn column could tial defect candidates are all located at the left side. To potentially work the same way if their outermost s and d understand these trends, we first compare the electronic orbital are deep below the valence band maximum. For projected density of states (PDOS) on the atomic orbitals the transition metals in the columns near the Zn column, of the transition metal impurities to the density of states as long as the electron count meets the requirement, i.e. of bulk Si (see Fig. 7, S6 and S7 for details). This pro- two or four electrons within the band gap, they could vides insights into the relative energies of the outermost potentially have triplet ground states. However, having s and d orbitals of the transition metals to the Si band two or four electrons within the band gap can also re- +1 structure. We find out that, for substitutional defects, sult in spin singlet states, which are the cases for CuSi −1 the outermost s and d orbitals of the transition metal and CuSi (see Fig. S4 for their defect-level diagrams). are well below the valence band maximum of Si while, Nonetheless, this procedure explains the charge state of for interstitial defects, the outermost s and d orbitals are the substitutional defect candidates and their locations dispersed around the Si band gap. Next, we count the on the transition-metal periodic table. It could facilitate number of participating electrons when the defects are a quick search as long as the outermost s and d orbitals of created and use the relative energy positions identified transition metals are deep within the valence band max- previously to accommodate these electrons. For substitu- imum. Moving left-ward, the candidate list stop at Co 7 column for silicon because, in order to fulfill the electron temperature is expected to be lower than the room tem- count, it requires more negative charge states, which are perature, given that Si band gap (≈ 1.2 eV) is much not stable within the Si band gap. But if a host mate- smaller than the diamond one (≈ 5.5 eV). rial can accommodate more negative charge states and We prioritize the search for optical triplet-triplet tran- the relative position are similar, transition metals to the sitions within the Si band gap as motivated by the under- left of the Co column could also be substitutional defect lying mechanism of NV centers in diamonds. However, candidates. singlet-singlet or doublet-doublet transitions also show Similarly, electron counting also explains why inter- the potential as spin-photon interfaces27,28. Since differ- stitial defect candidates are all located at the left side of ent operation schemes that utilize these two transitions the transition-metal periodic table. Unlike substitutional are also possible, we also report all the identified transi- defects, the outermost s and d orbitals of the interstitial tions in the Supplementary Materials. transition metals are located right near the band gap (see Fig. 7(b) and S7). Besides, unlike substitutional defects, no Si dangling bonds pointing to the defect site exist Further considerations when an interstitial defects is created. Therefore, the to- tal number of the outermost s and d electrons of a tran- Lastly, we emphasize that the computational search sition metal is the number of electrons that occupy the here is only the first step to screen candidate defect defect states within the silicon band gap. For instance, +1 systems. In order to find an equivalent deep center in Sc has three outermost electrons, suggesting that Sci crystalline silicon that has the same (or similar) oper- has two electrons within the gap and could form a triplet ation scheme as NV− centers in diamond, a few more ground state. Moving rightward, the candidate list ends steps are required to decide the final candidates. Previ- at the V column but it could potentially extend to Cr col- ous studies have shown the importance of having strong umn with +2 charge state. We ruled out Cr column for +2 zero-field splitting (ZFS), which eliminates the need of silicon because the triplet ground state of Cri are local- external magnetic field to isolate the m=0 and m=±1 ized slightly below the valence band maximum. Again, states of a spin triplet system.29 Therefore, future ZFS transition metals to the right of the V column are plau- calculations30 can be used to further shorten the candi- sible if a different host semiconductor can accommodate date list identified in this work. more charge states. This is supported by the molybde- For the application of quantum communication, a num color center observed in 4H and 6H-SiC17, which 22 sharp zero-phonon line (ZPL) of the optical spectra is has significant larger band gap (Eg ≈ 3.0-3.2 eV) . required in order to create indistinguishable photons13. Lastly, our findings are consistent with the observation Since the rest of the spectra (phonon side bands) are not that transition metals are portable among different host usable, a larger Debye-Waller factor (ratio between ZPL materials as long as they share the same lattice symme- 26 over phonon side bands) is desired. Future calculations try and similar bond length . Namely, when transition- of ZPL and Debye-Waller factor31 can be used for com- metal color centers are identified in one host material, parisons with experimental spectra. they are likely to be color centers in other similar host The way that intersystem crossing (ISC) of NV centers materials as defined above. We further identify the im- in diamond works enables the initialization of the qubit at portance of the relative energy position of the outermost room temperatures. Based on this, another key next step s and d orbitals with respect to the host band structure. toward Si-based qubit with higher operation temperature A more comprehensive study is still required to test the is to understand the ISCs in these candidates. ISC is the concept of portable transition metals within the context non-radiative relaxation of excited electron, mediated by of color centers. phonon. With the development of first-principles phonon calculations in the past few decades32, the ISC rate can now be quantitatively predicted and future calculations Significance and other in-gap transitions will finalize the candidate list. Additionally, nuclear spins and diffusion coefficient of Currently, Si-based semiconductor qubits are limited candidate transition metals are critical factors for phys- in applications of quantum communication and sensing, ical realization of color centers in Si. Nuclear spins of due to the lack of established spin-photon interfaces and defects generally act as spin noise, reducing the coher- low operating temperature13, respectively. Aiming for ence time of the qubit system. However, they can be NV-center-like defects in Si, our computational search also beneficial, serving as quantum memories. There- finds transition metal defects in silicon that also have op- fore, selection criteria based on nuclear spins depends on tical triplet-triplet transitions within the band gap. In- the actual applications. Focused ion beam techniques tuitively, these defect systems can potentially serve as can readily select the isotopes of a dopant and we notice the spin-photon interface for Si-based qubits. In addi- that, among the candidate transition-metal defects, Sc, tion, the defect systems identified here also could have V, Co, and Au have no naturally stable zero nuclear spin similar operation scheme to NV centers in diamond, al- isotope. For the perspective of reliability, a mobile color lowing higher operating temperature. But the maximum center can undermine the performance of a Si-based qubit 8 since all the external controls are exerted on predefined specified. We specifically use Vienna Ab initio Simula- locations. Mobility of a defect is measured by its diffu- tion Package (VASP 5.4.4 GPU version)43–45. The wave- sion coefficient and the values for transition metals in Si function is expanded using kinetic energy cutoff of 340 are well documented in the literature21,33. Co and Ni are eV, which is sufficient for the projected augmented-wave known to diffuse even at room temperature21, making (PAW) potentials46 used to describe the electron-ion in- them less suitable if higher operating temperature is pri- teractions (the details for the PAW can be found in the oritized. Au, V, and Zn are also fairly mobile21,33,34, with Supplemental Materials). diffusion coefficients at the order of 107 (cm2/s) at tem- perature of 1100 ◦C. Among them, Zn has very low evap- oration pressure, requiring encapsulation of the device33, Defect concentration while V and Au stay in the bulk Si after cooling. Lastly, 35 36 37 Sc , Zr , and Pt have very low reported diffusion co- Defect concentration is defined by, efficient, making them essentially immobile after cooling. 0 +2 0 Based on both factors, Zri , Zri , and PtSi are particu- −∆HD,q larly promising for future experimental realizations. CD,q = C0 exp( ) (2) kBT

where C0 is the concentration of available sites, ∆HD,q is METHODS the defect formation enthalpy and kB is the Boltzmann constant. Here we assume negligible contribution from Defect formation energy vibrational entropy.

We followed the standard supercell approach to calcu- late the defect formation energies38,39, Thermodynamics charge transition state X ∆HD,q(EF , µ) = [ED,q − EH ] + niµi + qEF + Ecorr Thermodynamics charge transition state reveals the i dominant charge state at a given Fermi level and is de- (1) fined by the Fermi level that gives rise to the same defect where ED,q and EH are generalized DFT total energies formation energies for two charge states of q1 and q2, of the defect and host supercell, respectively. µi is the chemical potential of element i and ni is the number of ED,q1 − ED,q2 (q1/q2) = (3) element i added (ni < 0) or removed (ni > 0). q is q2 − q1 the charge state of the defect and EF is the Fermi level (electron chemical potential) referenced to valence band where ED,q1(2) is the total energy of defect cell with maximum. charge of q1(q2) and the correction term for each defect Ecorr is the correction term that addresses the er- cell is included. Transition level of (q1/q2), like EF in rors intrinsic to the supercell approach, including (1) Eq. 1, is referenced to valence band maximum and it in- size effect (2) potential alignment (3) band edge prob- dicates that q1 is the dominant charge state when the lem. Specifically, we follow the correction scheme de- Fermi level is lower than the transition level. vised by Lany and Zunger38 and the implementation by Goyal et al.39. To correct the image charge interaction for the 216-atom cell, static dielectric constant of 11.11 is Single-particle defect levels used. In this paper, the band gap problem is addressed via generalized hybrid density functional theory, specif- Single-particle defect levels are the single-particle ically HSE0640, using the standard mixing parameter Kohn-Sham orbitals of a defect cell and potential align- value (α = 0.25). Such choice renders electronic indi- ment is performed to align them with the band structure rect band gap of 1.16 eV, which is in great agreement of the host cell. We note that single-particle states within with experimental values of 1.17 eV41. HSE06 also pre- the electronic band gap correlate with the thermodynam- dicts the lattice constant of 5.43 A˚, which agrees with ics charge transition levels but by no means the same. experimental value42.

Optical absorption coefficient Total energy calculations Absorption coefficient (α) at a given energy All the total energies of supercells are calculated us- difference(i) is calculated using the complex refractive ing spin-polarized generalized hybrid density functional index (n), theory, specifically HSE0640 with the standard mixing parameter (α = 0.25). 216-atom supercell with gamma- 2i Im[n(i)] only kpoint sampling is used throughout the paper unless α(i) = (4) ~c 9 where ~ is the reduced planck’s constant, c is the speed ACKNOWLEDGMENTS of light. The complex refractive index is the square root of the frequency-dependent complex dielectric function, This work was funded by NREL’s Laboratory Directed in which the imaginary part can be calculated using the Research and Development program. NREL is supported linear response approach and the real part by Kramers- by the US Department of Energy under Contract No. 47 Kronig transformation . We use the VASP code (VASP DE-AC36-08GO28308 with Alliance for Sustainable En- 5.4.4) and the linear response calculation is based on the ergy, LLC, the Manager and Operator of the National generalized Kohn-Sham states of HSE06 calculation for Renewable Energy Laboratory. The research was per- candidate defect systems. The complex shift of 0.009 formed using computational resources sponsored by the is used in the Kramers-Kronig transformation and the Department of Energy’s Office of Energy Efficiency and energy resolution is 0.01 eV. Around 800 empty bands are Renewable Energy and located at the National Renew- used for the supercell with around 864 electrons, which able Energy Laboratory. are sufficient for the small photon energy range of interest since the difference in absorption intensity is negligible with increasing empty bands. AUTHOR CONTRIBUTIONS

C.-W. L. performed the defect calculations and ana- lyzed the results. V.S. and C.-W.L. designed the simu- lations. V.S. oversaw the calculations and the analysis. V.S., M.S., and A.T. conceived the idea. All authors contributed to the writing of the manuscript.

DATA AVAILABILITY COMPETING INTERESTS STATEMENT

The data are available upon reasonable request. The authors declare no competing interests.

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