Equation Chapter 1 Section 1
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Dicke Superradiance in Solids [Invited]
C80 Vol. 33, No. 7 / July 2016 / Journal of the Optical Society of America B Review Dicke superradiance in solids [Invited] 1 1 2 1 2 KANKAN CONG, QI ZHANG, YONGRUI WANG, G. TIMOTHY NOE II, ALEXEY BELYANIN, AND 1,3,4, JUNICHIRO KONO * 1Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA 2Department of Physics and Astronomy, Texas A&M University, College Station, Texas 77843, USA 3Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA 4Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA *Corresponding author: [email protected] Received 18 February 2016; revised 7 April 2016; accepted 7 April 2016; posted 8 April 2016 (Doc. ID 259437); published 13 May 2016 Recent advances in optical studies of condensed matter systems have led to the emergence of a variety of phenomena that have conventionally been studied in the realm of quantum optics. These studies have not only deepened our understanding of light–matter interactions but have also introduced aspects of many-body corre- lations inherent in optical processes in condensed matter systems. This paper is concerned with the phenomenon of superradiance (SR), a profound quantum optical process originally predicted by Dicke in 1954. The basic concept of SR applies to a general N body system, where constituent oscillating dipoles couple together through interaction with a common light field and accelerate the radiative decay of the whole system. Hence, the term SR ubiquitously appears in order to describe radiative coupling of an arbitrary number of oscillators in many situations in modern science of both classical and quantum description. -
Structural Characterization Studies on Semiconducting Znsnn2 Films Using Synchrotron X-Ray Diffraction
Structural Characterization Studies on Semiconducting ZnSnN2 Films using Synchrotron X-ray Diffraction by Nancy Senabulya A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Applied Physics) in The University of Michigan 2017 Doctoral Committee: Professor Roy Clarke, Chair Professor Steven M. Durbin Assistant Professor Emmanouil Kioupakis Professor Cagliyan Kurdak [email protected] ORCID ID: 0000-0002-3394-5452 © Nancy Senabulya All Rights Reserved To Andrew, Jordan and Elise ii ACKNOWLEDGEMENTS I would like to thank my mom who sacrificed everything for my siblings and I to get the best education in Uganda. For some reason, she always believed I would get a PhD and I never believed her until now. Her love and support helping me look after our kids in the first six months of their lives, when I had them in graduate school is the reason I could complete this PhD in record time. My sister and friend Donna has been an important source of inspiration for me since childhood. Her passion for Math and Science and subsequent successful career in Telecommunications Engineering have allowed me to dream beyond my wildest dreams the things I could accomplish as a woman from a developing country. Thank you, Donna, for not allowing to be limited by circumstances. You worked hard and set a good example for all of us to follow. I am proud to be your sister. Diana, Ivan, Penny, Jenna, Martin, I love you guys so much. Thanks for rooting for me throughout this whole process, I have enjoyed our conversations on skype and been so proud of all you have accomplished the last few years. -
5. Atomic Radiation Processes
5. Atomic radiation processes Einstein coefficients for absorption and emission oscillator strength line profiles: damping profile, collisional broadening, Doppler broadening continuous absorption and scattering 1 2 A.A. LineLine transitionstransitions Einstein coefficients probability that a photon in frequency interval in the solid angle range is absorbed by an atom in the energy level El with a resulting transition El Eu per second: abs dω dw (ν, ω,l,u)=Blu Iν(ω) ϕ(ν)dν 4π atomic property ~ no. of incident probability for probability for photons absorption of with photon with probability for absorption transition l u profile Blu : Einstein coefficient for absorption 3 Einstein coefficients similarly for stimulated emission st dω dw (ν,ω,l,u)=Bul Iν (ω) ϕ(ν)dν 4π Bul : Einstein coefficient for stimulated emission and for spontaneous emission sp dω dw (ν, ω,l,u)=Aul ϕ(ν)dν 4π Aul : Einstein coefficient for spontaneous emission 4 st dω abs dω dw (ν,ω,l,u)=Bul Iν (ω) ϕ(ν)dν 4π dw (ν, ω,l,u)=Blu Iν(ω) ϕ(ν)dν 4π Einstein coefficients, absorption and emission coefficients Number of absorptions & stimulated emissions dF dV = dF ds Iν in dV per second: abs st ds nl dw dV, nu dw dV absorbed energy in dV per second: abs abs st stimulated emission counted dE = nl hν dw dV nu hν dw dV ν − as negative absorption and also (using definition of intensity): abs L dEν = κν Iν ds dω dν dF Absorption and emission coefficients are a function of Einstein coefficients, occupation numbers and line broadening hν κL = ϕ(ν)[n B n B ] ν 4π l lu − u ul L hν for -
Optical and Electrical Properties of Organic Semiconductors: Experiment and Simulation
OPTICAL AND ELECTRICAL PROPERTIES OF ORGANIC SEMICONDUCTORS: EXPERIMENT AND SIMULATION by Xialing Chen Bachelor of Science, University of Science and Technology of China, 2007 Submitted to the Graduate Faculty of The Dietrich School of Arts and Sciences in partial fulfillment of the requirements for the degree of Doctor of Philosophy University of Pittsburgh 2015 TITLE PAGE UNIVERSITY OF PITTSBURGH Dietrich School of Arts and Sciences This dissertation was presented by Xialing Chen It was defended on January 7th, 2014 and approved by David Waldeck, Professor, Department of Chemistry Alexander Star, Associate Professor, Department of Chemistry Minhee Yun, Associate Professor, Department of Electrical and Computer Engineering Dissertation Advisor: Geoffrey R Hutchison, Associate Professor, Department of Chemistry UNIVERSITY OF PITTSBURGH School of Arts and Science ii Copyright © by Xialing Chen 2015 Copyright © by Xialing Chen 2015 Copyright © by Xialing Chen 2015 Copyright © by Xialing Chen 2015 Copyright © by Xialing Chen 2015iii Copyright © by Xialing Chen OPTICAL AND ELECTRICAL PROPERTIES OF ORGANIC SEMICONDUCTORS: EXPERIMENT AND SIMULATION Xialing Chen, PhD University of Pittsburgh, 2015 This dissertation focuses on the charge transport of organic semiconductors, particularly in the presence of traps and defects. Rather than attempting to ultimately pure materials, intentional mixtures were made and studied. The materials were characterized by electrochemistry, UV/Vis spectroscopy and computational studies using density functional theory (DFT) and time dependent DFT (TDDFT). In experiment, the phthalocyanine films were prepared from solution. We explored how to improve the coatings of organic semiconductors on different substrates. Moreover, the effect of how intentionally introduced traps or barriers change the charge transport was studied using the spin-coated octabutoxy phthalocyanine and naphthalocyanine mixed films.