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Optoelectronic Oscillators: Recent and Emerging Trends Optoelectronic Oscillators: Recent and Emerging Trends
Optoelectronic Oscillators: Recent and Emerging Trends Optoelectronic Oscillators: Recent and Emerging Trends October 11, 2018 Afshin S. Daryoush(1), Ajay Poddar(2), Tianchi Sun(1), and Ulrich L. Rohde(2), Drexel University(1); Synergy Microwave(2) Highly stable oscillators are key components in many important applications where coherent processing is performed for improved detection. The optoelectronic oscillator (OEO) exhibits low phase noise at microwave and mmWave frequencies, which is attractive for applications such as synthetic aperture radar, space communications, navigation and meteorology, as well as for communications carriers operating at frequencies above 10 GHz, with the advent of high data rate wireless for high speed data transmission. The conventional OEO suffers from a large number of unwanted, closely-spaced oscillation modes, large size and thermal drift. State-of-the- art performance is reported for X- and K-Band OEO synthesizers incorporating a novel forced technique of self-injection locking, double self phase-locking. This technique reduces phase noise both close-in and far-away from the carrier, while suppressing side modes observed in standard OEOs. As an example, frequency synthesizers at X-Band (8 to 12 GHz) and K-Band (16 to 24 GHz) are demonstrated, typically exhibiting phase noise at 10 kHz offset from the carrier better than −138 and −128 dBc/Hz, respectively. A fully integrated version of a forced tunable low phase noise OEO is also being developed for 5G applications, featuring reduced size and power consumption, less sensitivity to environmental effects and low cost. Electronic oscillators generate low phase noise signals up to a few GHz but suffer phase noise degradation at higher frequencies, principally due to low Q-factor resonators. -
Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University
Marquette University e-Publications@Marquette Master's Theses (2009 -) Dissertations, Theses, and Professional Projects Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University Recommended Citation Stave, Nicholas Jon, "Analysis of BJT Colpitts sO cillators - Empirical and Mathematical Methods for Predicting Behavior" (2019). Master's Theses (2009 -). 554. https://epublications.marquette.edu/theses_open/554 ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR by Nicholas J. Stave, B.Sc. A Thesis submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science Milwaukee, Wisconsin August 2019 ABSTRACT ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR Nicholas J. Stave, B.Sc. Marquette University, 2019 Oscillator circuits perform two fundamental roles in wireless communication – the local oscillator for frequency shifting and the voltage-controlled oscillator for modulation and detection. The Colpitts oscillator is a common topology used for these applications. Because the oscillator must function as a component of a larger system, the ability to predict and control its output characteristics is necessary. Textbooks treating the circuit often omit analysis of output voltage amplitude and output resistance and the literature on the topic often focuses on gigahertz-frequency chip-based applications. Without extensive component and parasitics information, it is often difficult to make simulation software predictions agree with experimental oscillator results. The oscillator studied in this thesis is the bipolar junction Colpitts oscillator in the common-base configuration and the analysis is primarily experimental. The characteristics considered are output voltage amplitude, output resistance, and sinusoidal purity of the waveform. -
Time and Frequency Users' Manual
,>'.)*• r>rJfl HKra mitt* >\ « i If I * I IT I . Ip I * .aference nbs Publi- cations / % ^m \ NBS TECHNICAL NOTE 695 U.S. DEPARTMENT OF COMMERCE/National Bureau of Standards Time and Frequency Users' Manual 100 .U5753 No. 695 1977 NATIONAL BUREAU OF STANDARDS 1 The National Bureau of Standards was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, a technical (3) basis for equity in trade, and (4) technical services to pro- mote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research the Institute for Applied Technology, the Institute for Computer Sciences and Technology, the Office for Information Programs, and the Office of Experimental Technology Incentives Program. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consist- ent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essen- tial services leading to accurate and uniform physical measurements throughout the Nation's scientific community, industry, and commerce. The Institute consists of the Office of Measurement Services, and the following center and divisions: Applied Mathematics -
Silicon Bipolar Distributed Oscillator Design and Analysis
Science World Journal Vol 9 (No 4) 2014 www.scienceworldjournal.org ISSN 1597-6343 SILICON BIPOLAR DISTRIBUTED OSCILLATOR DESIGN AND ANALYSIS Article Research Full Length Aku, M. O. and *Imam, R. S. Department of Physics, Bayero University, Kano-Nigeria * Department of Physics, Kano University of Science and Technology, Wudil-Nigeria ABSTRACT between its input and output. It can be shown that there is a The design of high frequency silicon bipolar oscillator using trade-off between the bandwidth and delay in an amplifier common emitter (CE) with distributed output and analysis is (Lee, 1998). Distributed amplification provides a means to carried out. The general condition for oscillation and the take advantage of this trade-off in applications where the resulting analytical expressions for the frequency of delay is not a critical specification of the system and can be oscillators were reviewed. Transmission line design was compromised in favour of the bandwidth (distributed carried out using Butterworth LC filters in which the oscillator). It is noteworthy that the physical size of a normalised values and where used to obtain the distributed amplifier does not have to be comparable to the actual values of the inductors and capacitors used; this wavelength for it to enhance the bandwidth. Dividing the gain largely determines the performance of distributed oscillators. between multiple active devices avoids the concentration of The values of inductor and capacitors in the phase shift the parasitic at one place and hence eliminates a dominant network are used in tuning the oscillator. The simulated pole scenario in the frequency domain transfer function. -
Maintenance of Remote Communication Facility (Rcf)
ORDER rlll,, J MAINTENANCE OF REMOTE commucf~TIoN FACILITY (RCF) EQUIPMENTS OCTOBER 16, 1989 U.S. DEPARTMENT OF TRANSPORTATION FEDERAL AVIATION AbMINISTRATION Distribution: Selected Airway Facilities Field Initiated By: ASM- 156 and Regional Offices, ZAF-600 10/16/89 6580.5 FOREWORD 1. PURPOSE. direction authorized by the Systems Maintenance Service. This handbook provides guidance and prescribes techni- Referenceslocated in the chapters of this handbook entitled cal standardsand tolerances,and proceduresapplicable to the Standardsand Tolerances,Periodic Maintenance, and Main- maintenance and inspection of remote communication tenance Procedures shall indicate to the user whether this facility (RCF) equipment. It also provides information on handbook and/or the equipment instruction books shall be special methodsand techniquesthat will enablemaintenance consulted for a particular standard,key inspection element or personnel to achieve optimum performancefrom the equip- performance parameter, performance check, maintenance ment. This information augmentsinformation available in in- task, or maintenanceprocedure. struction books and other handbooks, and complements b. Order 6032.1A, Modifications to Ground Facilities, Order 6000.15A, General Maintenance Handbook for Air- Systems,and Equipment in the National Airspace System, way Facilities. contains comprehensivepolicy and direction concerning the development, authorization, implementation, and recording 2. DISTRIBUTION. of modifications to facilities, systems,andequipment in com- This directive is distributed to selectedoffices and services missioned status. It supersedesall instructions published in within Washington headquarters,the FAA Technical Center, earlier editions of maintenance technical handbooksand re- the Mike Monroney Aeronautical Center, regional Airway lated directives . Facilities divisions, and Airway Facilities field offices having the following facilities/equipment: AFSS, ARTCC, ATCT, 6. FORMS LISTING. EARTS, FSS, MAPS, RAPCO, TRACO, IFST, RCAG, RCO, RTR, and SSO. -
Durham Research Online
Durham Research Online Deposited in DRO: 07 November 2018 Version of attached le: Accepted Version Peer-review status of attached le: Peer-reviewed Citation for published item: Brennan, D.R. and Chan, H.K. and Wright, N.G. and Horsfall, A.B. (2018) 'Silicon carbide oscillators for extreme environments.', in Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing. Boca Raton, FL: CRC Press, pp. 225-252. Devices, circuits, and systems. Further information on publisher's website: https://doi.org/10.1201/9780429503634-10 Publisher's copyright statement: This is an Accepted Manuscript of a book chapter published by Routledge in Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing on 31 July 2018 available online: http://www.routledge.com/9780429503634 Additional information: Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full DRO policy for further details. Durham University Library, Stockton Road, Durham DH1 3LY, United Kingdom Tel : +44 (0)191 334 3042 | Fax : +44 (0)191 334 2971 https://dro.dur.ac.uk Silicon Carbide Oscillators for Extreme Environments D.R. -
Quartz Resonator & Oscillator Tutorial
Rev. 8.5.3.6 Quartz Crystal Resonators and Oscillators For Frequency Control and Timing Applications - A Tutorial January 2007 John R. Vig Consultant. Most of this Tutorial was prepared while the author was employed by the US Army Communications-Electronics Research, Development & Engineering Center Fort Monmouth, NJ, USA [email protected] Approved for public release. Distribution is unlimited NOTICES Disclaimer The citation of trade names and names of manufacturers in this report is not to be construed as official Government endorsement or consent or approval of commercial products or services referenced herein. Table of Contents Preface………………………………..……………………….. v 1. Applications and Requirements………………………. 1 2. Quartz Crystal Oscillators………………………………. 2 3. Quartz Crystal Resonators……………………………… 3 4. Oscillator Stability………………………………………… 4 5. Quartz Material Properties……………………………... 5 6. Atomic Frequency Standards…………………………… 6 7. Oscillator Comparison and Specification…………….. 7 8. Time and Timekeeping…………………………………. 8 9. Related Devices and Applications……………………… 9 10. FCS Proceedings Ordering, Website, and Index………….. 10 iii Preface Why This Tutorial? “Everything should be made as simple as I was frequently asked for “hard-copies” of possible - but not simpler,” said Einstein. The the slides, so I started organizing, adding main goal of this “tutorial” is to assist with some text, and filling the gaps in the slide presenting the most frequently encountered collection. As the collection grew, I began concepts in frequency control and timing, as receiving favorable comments and requests simply as possible. for additional copies. Apparently, others, too, found this collection to be useful. Eventually, I I have often been called upon to brief assembled this document, the “Tutorial”. visitors, management, and potential users of precision oscillators, and have also been This is a work in progress. -
Model PRS10 Rubidium Frequency Standard
Model PRS10 Rubidium Frequency Standard Operation and Service Manual 1290-D Reamwood Avenue Sunnyvale, California 94089 Phone: (408) 744-9040 • Fax: (408) 744-9049 email: [email protected] • www.thinkSRS.com Copyright © 2002, 2013, 2015 by Stanford Research Systems, Inc. All Rights Reserved. Version 1.5 (Dec. 21, 2015) PRS10 Rubidium Frequency Standard Table of Contents 1 Introduction 3 Crystal Oscillator 42 Crystal Heater 44 Specifications 4 Schematic RB_F2 (Sheet 2 of 6) 44 Temperature Control Servos 44 Abridged Command List 5 Conversion to 10MHz TTL 45 Photocell Amplifier 46 Theoretical Overview 8 Signal Filters for Oscillator Control 47 Rubidium Frequency Standards 8 Analog Multiplexers 47 Schematic RB_F3 (Sheet 3 of 6) 48 PRS10 Overview 11 Microcontroller 48 Block Diagram 11 RS-232 50 Ovenized Oscillator 11 12 Bit A/D Conversion 50 Frequency Synthesizer 11 12-Bit Digital to Analog Converters 50 Physics Package 13 Magnetic Field Control 50 Control Algorithm 13 Phase Modulation 51 Initial Locking 14 1PPS Output 51 Locking to External 1pps 14 1PPS Input Time-Tag 51 CPU Tasks 18 Schematic RB_F4. (Sheet 4 of 6) 52 High Resolution, Low Phase Noise, Applications 19 RF Synthesizer 52 Interface Connector 19 RF Output Amplifier 53 Configuration Notes 19 Step Recovery Diode Matching 53 Hardware Notes 20 Analog Control 54 Operating Temperature 21 Schematic RB_F5 (Sheet 5 of 6) 54 Frequency Adjustment 21 Power Supply, Lamp Control and 1PPS Timing PCB 54 RS-232 Instruction Set 22 Linear Power Supplies 54 Syntax 22 Lamp Regulator 55 Initialization -
Frequency Standards and Clocks: >ARTMENT of 0MMERC
NBS TECHNICAL NOTE 616 U.S. Frequency Standards and Clocks: >ARTMENT OF 0MMERC. A Tutorial Introduction National of 00 Js snss £2 a NATIONAL BUREAU OF STANDARDS 1 The National Bureau of Standards was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation 2—Nuclear Radiation 2—Applied Radiation 2—Quantum Electronics3— Electromagnetics 3—Time and Frequency 3—Laboratory Astrophysics3—Cryo- 3 genics . THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research lead- ing to improved methods of measurement, standards, and data on the properties of well-characterized materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government agencies; and develops, produces, and distributes standard reference materials. -
UNIVERSITY of NEVADA, RENO Introduction to Quartz Resonator
UNIVERSITY OF NEVADA, RENO Introduction to Quartz Resonator Based Electronic Oscillators and Development of Electronic Oscillators Using Inverted-Mesa Etched Quartz Resonators A thesis submitted on partial fulfillment of the requirements for the degree of MASTER OF SCIENCE IN ELECTRICAL ENGINEERING By Matthew B. Anthony Thesis Advisor Dr. Indira Chatterjee August 2009 Copyright by Matthew B. Anthony 2009 All Rights Reserved THE GRADUATE SCHOOL We recommend that the thesis prepared under our supervision by MATTHEW B. ANTHONY entitled Introduction To Quartz Resonator Based Electronic Oscillators And Development Of Electronic Oscillators Using Inverted-Mesa Etched Quartz Resonators be accepted in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Indira Chatterjee, Ph.D., Advisor Bruce P. Johnson, Ph.D., Committee Member Scott Talbot, M.S., Committee Member Ronald Phaneuf, Ph.D., Graduate School Representative Marsha H. Read, Ph. D., Associate Dean, Graduate School August, 2009 i ABSTRACT The current work is primarily focused on the topic of the advancement of low phase noise and low jitter quartz crystal based electronic oscillators to frequencies beyond those presently available using quartz resonators that are manufactured using the traditional method that processes the entire sample to a uniform thickness. The method of inverted-mesa etching allows the resonant part of the quartz sample to be made much thinner than the remainder of the sample – enabling higher resonant frequencies to be achieved. The current work will introduce and discuss the importance of phase noise and jitter in electronic oscillator applications such as wireless communication systems and sampled data systems. General oscillator and quartz resonator background will be provided to facilitate the understanding of the oscillator circuit used herein. -
Crystal Structure Transformations in Inorganic Sulfates, Phosphates, Perchlorates, and Chromates Based on the Literature up to 1974
A111D1 ^65756 NATL INST OF STANDARDS & TECH R. .C. All 101 985758 Rao C. N. R. (Chlnt/Crystal structure t 4 A50.R28 1975 C.1 NSRDS 1975 NSRDS % Of U.S. DEPARTMENT OF COMMERCE National Bureau of Standards " / ' ' N N SRD S Crystal Structure Transformations in Inorganic Sulfates, Phosphates, Perchlorates, and Chromates NATIONAL BUREAU OF STANDARDS The National Bureau of 1 Standards was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation’s science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Institute for Computer Sciences and Technology, and the Office for Information Programs. iHE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation’s scientific community, industry, and commerce. The Institute consists of the Office of Measurement Services, the Office of Radiation Measurement and the following Center and divisions: Applied Mathematics — Electricity — Mechanics — Heat — Optical .Physics — Center for Radiation Research: Nuclear Sciences; Applied Radiation — Laboratory Astrophysics 2 — Cryogenics 2 — Electromagnetics 2 2 — Time and Frequency . -
Wideband Tunable Microwave Signal Generation in a Silicon-Based Optoelectronic Oscillator
Wideband tunable microwave signal generation in a silicon-based optoelectronic oscillator Phuong T.Do1,*, Carlos Alonso-Ramos2, Xavier Le Roux2, Isabelle Ledoux1, Bernard Journet1, and Eric Cassan2 1LPQM (CNRS UMR-8537,Ecole´ normale superieure´ Paris-Saclay, Universite´ Paris-Saclay, 61 avenue du President´ Wilson, 94235 Cachan Cedex, France 2C2N (CNRS UMR-9001), Univ. Paris-Sud, Universite´ Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France *[email protected] ABSTRACT Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO relying on direct conversion of intensity modulated signals into the microwave domain yield a limited tunability. Wider tunability has been shown by indirect phase-modulation to intensity-modulation conversion, requiring precise control of the phase-modulation. Here, we propose a new approach enabling Si OEOs with wide tunability and direct intensity-modulation to microwave conversion. The microwave signal is created by the beating between an optical source and single sideband modulation signal, selected by an add-drop ring resonator working as an optical bandpass filter. The tunability is achieved by changing the wavelength spacing between the optical source and resonance peak of the resonator. Based on this concept, we experimentally demonstrate microwave signal generation between 6 GHz and 18 GHz, the widest range for a Si-based OEO. Moreover, preliminary results indicate that the proposed Si OEO provides precise refractive index monitoring, with a sensitivity of 94350 GHz/RIU and a 8 potential limit of detection of only 10− RIU, opening a new route for the implementation of high-performance Si photonic sensors.