Program Pages 1 X 9 2012 Final Program+P1x10+V5.Qxd 10/18/2017 7:14 AM Page C1

2017 II-VI Final Program pages 1 x 9_2012 Final Program+p1x10+v5.qxd 10/18/2017 7:14 AM Page C1

PROGRAM The 2017 U.S. WORKSHOP on the PHYSICS and CHEMISTRY of II–VI MATERIALS Embassy Suites Chicago Downtown – Lakefront October 30 –November 2, 2017 Chicago, Illinois, USA II-VI Detector Materials Special Sessions • IR • Superlattices: II-VI and III-As/Sb • UV • II-VI Based Solar Cells • Gamma-Ray • Alternatives to CdZnTe Substrates • X-Ray • HgCdTe Avalanche Photodiodes • Photovoltaic • X-Ray and Gamma-Ray Detectors • CdZnTe • Surfaces and Interfaces • HgCdTe • ZnO Materials and Devices • ZnO • Defects and Doping • ZnS • Surface Passivation • History of IR Detectors

Participating Organizations U.S. Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate U.S. Army Research Laboratory U.S. Army SMDC U.S. Navy Electro-Optics Center Penn State University Office of Naval Research Air Force Research Laboratory The Minerals, Metals & Materials Society University of Illinois at Chicago Endorsed by The American Physical Society

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Promotional Partners

The 2017 II-VI Workshop would like to express sincere thanks to our supporting organizations and for the contributions from our very generous corporate partners.

Gold Partners

Tabletop Exhibitors EAG Laboratories

JX Nippon Mining & Metals

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In Memory of Dr. Herbert Frank Schaake

Herbert F. Schaake (1939 – 2017)

Herb’s involvement with the “U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride” dates back to the first Workshop held in October 1981. Thereafter he was a mainstay at the II- VI Workshop, as it subsequently became known, and never missed the annual meeting. He served on the Workshop committee, as the Proceedings Editor, Conference Co-Chair, reviewed papers and presented his research. Herb loved mentoring students, and volunteered to judge student papers at the II-VI Workshop.

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2017 II-VI WORKSHOP In the 36 years since the first MCT Workshop was held in 1981, the technology of HgCdTe and related devices has significantly matured and broadened. The Workshop plays a vital role in this technological evolution. It provides the principal open forum for the exchange of information relative to theory and experiment, synthesis, and analysis. It brings together university, governmental, and industrial research in a highly interactive manner.

• To encourage in-depth discussion and audience participation, the Workshop combines conven - tional oral and poster presentations with sufficient time allocated for questions and answers. • To broaden exposure without sacrificing depth, invited speakers offer insight into areas relevant to II-VI materials . • To ensure dissemination of results, submitted peer-reviewed full-length papers will appear in the Journal of Electronic Materials.

The Workshop will focus on fundamental research on the major scientific problems in II-VI materials. Its primary goal is to promote an understanding of the relationship among the physical and chemical properties, and leverage this understanding into manu - facturing and performance improvements. Informal discussions among participants are strongly encouraged and ample time for paper discus - sion and individual interactions has been scheduled. To foster these interactions, lunch will be provided on all three days of the Workshop, while a Wine and Cheese Reception has been scheduled for Tuesday evening.

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The 2017 II-VI Workshop brings together Industrial Leaders! We are excited to announce this year’s invited speakers: Welcome Remarks: Congressman Raja Krishnamoorthi

Keynote: Donald Reago, NVESD “New Efforts and Challenges for High Performance FPAs in the Army” Jay Lewis, DARPA/MTO “Wafer Scale Infrared Detectors (WIRED) and Related Programs at DARPA-MTO”

Industry Perspectives: James Beletic, Teledyne Imaging Sensors “An Update to Teledyne’s II-VI Technologies and Image Sensors, and the Science that they Enable” David Billion-Lanfrey, Sofradir “30 years of MCT Excellence at Sofradir: Achievements and Future Challenges” Leonard Chen, Raytheon Vision Systems “Sensing the Spectrum at RVS” Chung Han, I3 Systems “Current Status of IR Detectors at I3 Systems” Mike Scholten, DRS Technologies “HgCdTe – The Workhorse Material at DRS”

Invited: Jeff Beck, DRS Technologies “HgCdTe Avalanche Photodiodes for UV to IR Photon Detection” Lu Chen, Shanghai Institute of Technology “Recent Progress on HgCdTe by MBE of SITP” Philippe Guyot-Sionnest, University of Chicago “Colloidal Quantum Dots of Infrared Photodetection” Philip Klipstein, SCD “Topological Insulator Superlattices” Madhu Reddy, Raytheon Visions Systems “MBE HgCdTe on Large-size Substrates” Johan Rothman, LETI “Physics and Applications of HgCdTe APDs” Chee Hing Tan, University of Sheffield “Development of Photon Counting using InAs Avalanche Photodiodes with Negligible Excess Noise”

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David Ting, NASA/JPL “Type-II Superlattices and Barrier Infrared Detectors”

Tutorials: Donald L. Lee, Teledyne Imaging Sensors “Fully-Depleted, Background Radiation-Limited HgCdTe Detectors” David R. Rhiger, Raytheon Vision Systems “Application of Ellipsometry to Infrared Materials”

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WORKSHOP CO-CHAIRS Scott Johnson, Raytheon Vision Systems Sivalingam Sivananthan, University of Illinios at Chicago (Proceedings Editor)

PROGRAM COMMITTEE Tony Almeida, Army NVESD Jose M. Arias, CAC/NVESD Enrico Belotti, Boston University Ishwara Bhat, Rensselaer Polytechnic Institute Arnold Burger, Fisk University Joseph Burns, Air Force Research Laboratory William Clark, Army Research Office Roger DeWames, Army NVESD Nibir Dhar, DARPA/MTO (Proceedings Co-Editor and Website Manager) Tim Gessert, National Renewable Energy Laboratory Craig Hoffman, Naval Research Laboratory Ralph James, Brookhaven National Laboratory Pradip Mitra, DRS-RSTA, Inc. Thomas Myers, Texas State University – San Marcos Joe Pellegrino, Army NVESD Eric Piquette, Teledyne Imaging Systems Marion Reine, Consultant, Infrared Detectors Honnavalli Vydyanath, IRDT Solutions, Inc. Priyalal Wijewarnasuriya, Army Research Laboratory

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WORKSHOP COORDINATORS Samantha Tola Palisades Convention Management, Inc. 212/460-8090 x 203 212/460-5460 (fax) e-mail: [email protected] Paola Caicedo Sivananthan Laboratories, Inc. Phone: 630-226-0080 [email protected]

SPECIAL ISSUE EDITORIAL COORDINATOR Yesim Anter EPIR Technologies, Inc. [email protected]

WORKSHOP PARTICIPATING ORGANIZATIONS U.S. Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate U.S. Army Research Laboratory U.S. Army SMDC U.S. Navy Electro-Optics Center Penn State University Office of Naval Research Air Force Research Laboratory The Minerals, Metals & Materials Society University of Illinois at Chicago Endorsed by The American Physical Society

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WORKSHOP PARTICULARS

LOCATION AND DATE The 2017 II-VI Workshop will be held from October 30 – November 2, at the Embassy Suites Chicago, Downtown Lakefront, Chicago, Illinois.

TRAVEL ARRANGEMENTS The Embassy Suites Chicago, Downtown Lakefront is located about 17 miles from Chicago-O’Hare International Airport. Getting to and from the Airport: • Supershuttle – $29 one way per person • Taxi – Typically $50 (one person) • Rental Car – The distance from hotel is approximately 15 miles and the average drive time is 40 minutes For additional map and direction information visit: http://embassysuites3.hilton.com/en/hotels/illinois/embassysuites-chicago-downtown-magnificent-mile-CHIREES/maps- directions/index.html

WORKSHOP CHECK-IN Attendees arriving on Monday, October 30, will be able to pick up their Workshop material at the II-VI Registration Desk located in the Chicago River Ballroom Foyer between 4:00 and 8:00 pm. Attendees will also be able to pick up their Workshop material at the II-VI Registration Desk beginning at 7:00 am each day.

REGISTRATION/INFORMATION DESK The Registration/Information Desk will be located in the Chicago River Ballroom Foyer. For incoming messages, call the hotel at 312-836-5900 and ask to be transferred to the II-VI Workshop Registration Desk.

LUNCHES Lunches will be served in a section of the hotel on all three days of the Workshop. To keep the Workshop on schedule, attendees are encouraged to participate.

WINE AND CHEESE/TABLETOP DISPLAYS Following the presentations on Tuesday afternoon, a Wine and Cheese Reception has been scheduled to help promote informal discussion and attendee interaction. The Wine and Cheese Reception will be accompanied by several Tabletop Displays from commercial vendors displaying products of interest to the II-VI community. The tabletops will be on view during the Tuesday evening Reception as well as during the day on Wednesday and Thursday in the Chicago River Ballroom Foyer. The poster session will also take place at the same time of the reception in a section of the Ballroom adjacent to the foyer.

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WORKSHOP MEETING ROOMS The Workshop presentations as well as the Poster Session on Tuesday will be held in the Chicago River Ballroom. The Wine and Cheese Reception, tabletop displays, and refreshment breaks will all take place in the Chicago River Ballroom Foyer.

BOOK OF EXTENDED ABSTRACTS A copy of the Book of Extended Abstracts will be distributed to all attendees at the Workshop. The Extended Abstracts will contain summaries of all oral and poster papers presented at the Workshop

WORKSHOP PROCEEDINGS The II-VI Workshop papers will be published in a special issue of the Journal of Electronic Materials . The Proceedings will contain full-length refereed versions of papers presented at the Workshop. The cost of a copy of the electronic Proceedings is included in the fee. The Proceedings will be e-mailed to all attendees when available.

INSTRUCTIONS TO AUTHORS PLANNING TO SUBMIT FULL-LENGTH MANUSCRIPTS We are asking all authors to submit their manuscripts to II-VI workshop for online peer review using the link provided by Journal of Electronic Materials (JEM) http://www.editorial - manager.com/jems/. Please click on “submit manuscript” at the top of the page. The online manuscript submission will close on November 13, 2017. II-VI Paper Submission • Authors (both oral and poster) who presented their work at the Workshop can submit their manuscripts either by going to the JE M’s editorial web page at http://www.editorial manager. com/jems/ or via II-VI workshop’s website, http://www.ii-vi workshop.org/. The link to the manuscript submission can be accessed by clicking on the Author’s Info link located under “About Workshop” link on the navigation banner on top of the II-VI Workshop’s website. Submissions via e-mail will not be accepted . • New users will need to create an account. During the submission process, authors will be asked to enter additional information. • The type of paper is “Special Issue” and the category is “2017 U.S. II-VI Workshop”. • All submissions require an abstract of 200 words or less, a keywords line, a transfer of copyright form, and an electronic file. Papers are reviewed by two qualified referees to determine suitability. The editors’ decision to accept or reject a paper, based on referees’ comments, is final. Please employ the following guidelines when submitting a paper for review: • Manuscripts, written in English, should be in a single column and formatted to fit on a 22 × 28-cm sheet. Should

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manuscripts contain too many grammatical errors or awkward passages, the papers will be returned without review. Assistance of a professional proofreader (such as www. journalexperts. com) or qualified native speaker of English is recommended under these circumstances and may not only accelerate the review process but also allow for an early publication date. • The title of the article and abstract should be separate from the text. References, figure captions, and tables should also be on separate pages. • The works’ significance and its relation to the work of others should be detailed in the Introduction. Major assump - tions should be stated and procedures adequately outlined. • References should be cited by Arabic numbers as super - scripts. Include the names of all authors, standard abbreviated name of journal (see, for example, http://library. caltech.edu/ reference/ abbreviations/) the volume number, initial page number, and year of publication in parenthesis. For books, include city of publication and publisher. • Measurements should be given in metric units, including common abbreviations for time such as h, min, and s. • Figures may be published online in color with no charge, but color figures in the print version of the Journal carry a mandatory fee.

To avoid delays, please: 1. Define all acronyms upon first use, including in the abstract, in this style: scanning electron microscopy (SEM). 2. All micrographs must have scale markers. All plots must have both axes labeled with the variable name (units). 3. Contact author e-mail address and keywords must be included on the abstract page.

For detailed guidelines on artwork and the copyright issue please visit: http://www. springer.com/materials/optical+ %26+ electronic+materials/journal/11664#

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PROGRAM MONDAY, OCTOBER 30, 2017 4:00– 8:00 pm Pre-Workshop Registration 5:00 – 7:45 pm Tutorials

TUESDAY, OCTOBER 31, 2017 7:00 – 6:00 pm Registration 7:00– 9:30 am Continental Breakfast 8:00– 8:15 am Welcoming Remarks: Congressman Raja Krishnamoorthi 8:15– 8:45 am Keynote Address: Dr. Donald Reago 8:45– 9:45 am 1: Industrial Overview I 9:45–10:00 am BREAK 10:00–11:15 am 2: Devices I 11:15–12:00 pm 3: Solar Cells 12:00–12:10 pm In Memory of Dr. Herbert Schaake 12:10– 1:30 pm LUNCH 1:30– 3:00 pm 4: Materials I 3:00– 3:15 pm BREAK 3:15– 5:45 pm 5: Materials II 6:00 – 7:30 pm Poster Sessions 6:00– 7:30 pm TABLETOPS / WINE & CHEESE RECEPTION

WEDNESDAY, NOVEMBER 1, 2017 7:30 – 5:00 pm Registration 7:30– 9:30 am Continental Breakfast 8:45– 9:15 am Keynote Address: Dr. Jay Lewis 9:15 –10:15 am 6: Industrial Overview II 10:15–10:30 am BREAK 10:30–12:15 pm 7: Superlattice & Barrier Devices 12:15– 1:30 pm LUNCH 1:30– 3:00 pm 8: Wafer Scale Infrared Detectors and Quantum Dot Materials and Devices I 3:00– 3:15 pm BREAK 3:15– 5:45 pm 9: Wafer Scale Infrared Detectors and Quantum Dot Materials and Devices II

THURSDAY, NOVEMBER 2, 2017 7:30 – 2:00 pm Registration 7:30– 9:30 am Continental Breakfast 8:15 –10:45 am 10: Industrial Overview III / Devices II 10:45–11:00 am BREAK 11:00–12:15 pm 11: Devices III 12:15– 1:30 pm LUNCH 1:30– 2:45 pm 12: Modeling & Characterization I 2:45– 3:00 pm BREAK 3:00– 4:00 pm 13: Modeling & Characterization II 4:00– 4:15 pm 14: Late-News Papers 4:15– 4:30 pm WILLIAM E. SPICER AND THOMAS N. CASSELMAN BEST STUDENT PAPER AWARD PRESENTATION 4:30 – 4:45 pm Closing Remarks & Adjourn

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MONDAY, OCTOBER 30, 2017 Chicago River Ballroom (4:00 – 8:00 pm)

Workshop Registration (4:00 –8:00)

Tutorials (5:00 –7:45)

“Application of Ellipsometry to Infrared Materials” (5:00 –6:15) David Rhiger, Raytheon Vision Systems, Goleta, CA, USA This tutorial provides an introduction to the technique of ellip - sometry, with emphasis on practical applications to materials of importance for infrared detector fabrication. Basic concepts are explained, and numerous examples are presented, showing methods of interpreting the measurements. Cases include both single-wavelength and spectroscopic modes.

BREAK (6:15 –6:30)

“Fully-Depleted, Background (6:30 –7:45) Radiation-Limited HgCdTe Detectors” Donald Lee, Teledyne Imaging Sensors, Camarillo, CA, USA This tutorial will review the physics of operation, estimated performance, and potential benefits of fully-depleted HgCdTe detectors having current limited by background radiation rather than internal dark current. Topics that will be covered include: • Rationale for fully-depleted HgCdTe • Review of Rule07 conventional p/n detectors (Auger-1 limited) • Fundamental dark current mechanisms for conven - tional diodes and the impact of Auger recombination • Auger suppression – a simple model • Why Shockley-Read-Hall and not Auger lifetime sets the ultimate limit of detector performance • Background radiation-limited detector operation • Estimated performance of radiation-limited detectors versus cutoff wavelength and temperature • Methods for reducing background radiation • Potential impact of the fully-depleted detector design on reducing 1/f noise • Review of blackbody radiation • Radiative contributions from various factors, includ - ing the substrate, metals, guard diodes and neutral absorber regions • Technical challenges

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TUESDAY, OCTOBER 31, 2017 Chicago River Ballroom (7:00 am – 7:30 pm)

Registration (7:00–6:00) Continental Breakfast (7:00–9:30) Welcome Remarks (8:00–8:15) Dr. Sivalingam Sivananthan, II-VI Workshop Co-Chair University of Illinois at Chicago, Chicago, IL, USA Congressman Raja Krishnamoorthi U.S. House of Representatives, IL, USA Dr. Scott Johnson, II-VI Workshop Co-Chair Raytheon Visions Systems, Goleta, CA

KEYNOTE ADDRESS 8:15 – 8:45 am Dr. Donald Reago Director of Night Vision & Electronic Sensors Directorate, CERDEC, U.S. Army, Fort Belvoir, VA, USA “New Efforts and Challenges for High Performance FPAs in the Army” This talk address the U.S. Army CERDEC NVESD focus on developing focal plane arrays that have multi-function sensing capability, combining the ability to image with the ability to detection hostile fire events or data com - pression or even automatic target detection (ATR). Much effort is directed at improving the underlying read-out circuits (ROICs) to increase well capacity, improve dynamic range and perform other on-chip processing capabilities. As the ROICs become more complex, the uniformity of the absorbing material will become more critical. Advances in the state of the art materials and device processing will be addressed as well as challenges for the future.

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1: IndustrIal OvervIew I (8:45 – 9:45 am)

Chair: s. Johnson Raytheon Vision Systems, Goleta, CA, USA

1.1 Invited Paper: HgCdte: the workhorse (8:45) Material at drs M. Scholten DRS Technologies, Dallas, TX, USA

1.2 Invited Paper: Current status of Ir detectors (9:15) at i3system S. Bae, Y.-H. Kim, B.-H. Kim, M.-S. Jeoung, H. Chung i3system, Inc., Daejeon, South Korea

BreaK (9:45–10:00)

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2: devICes I (10:00 – 11:15 am)

Chair: C. Hoffman Naval Research Laboratory, Washington, DC, USA

2.1 Invited Paper: uv to Infrared single (10:00) Photon detection with linear Mode HgCdte avalanche Photodiodes J. Beck, W. Sullivan III, P. Mitra Leonardo DRS, Inc., Dallas, TX, USA X. Sun NASA Goddard Space Flight Center, Greenbelt, MD, USA B. Hancock California Institute of Technology, Pasadena, CA, USA

2.2 Invited Paper: Physics and applications of (10:30) HgCdte aPds J. Rothman, E. de Borniol, B. Delacourt, P. Blueut, J. Abergel, J.-A. Nicolas, F. Guellec, J.-P. Rostaing, G. Lasfargues CEA-LETI, Grenoble, France A. Dumas CNRS/LMD, Palaiseau, France

2.3 low temperature Carrier transport (11:00) Measurements on low doped HgCdte J. Easley, J. Phillips University of Michigan, Ann Arbor, MI, USA E. Arkun, M. Carmody Teledyne Imaging Sensors, Camarillo, CA, USA

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3: sOlar Cells (11:15 am - 12:00 pm)

Chair: t. Gessert Gessert Consulting, LLC, Conifer, CO, USA

3.1 the effect of wettability on the surface (11:15) structure of te-Based Chalcopyrite layer Grown by the Closed-space sublimation A. Uruno, Y. Sakurakawa, M. Kobayashi Waseda University, Tokyo, Japan

3.2 strategies to Obtain Heavily donor doped, (11:30) High-lifetime Cdte S. K. Swain, J. J. McCoy, K. G. Lynn Washington State University, Pullman, WA, USA J. N. Duenow, S. W. Johnston, M. Amarasinghe, W. K. Metzger National Renewable Energy Laboratory, Golden, CO, USA

3.3 ultrafast low-Cost Growth of High-Quality (11:45) Cdte on thin MBe seed templates E. Colegrove, J. M. Burst, D. S. Albin, J. N. Duenow, H. R. Moutinho, W. K. Metzger National Renewable Energy Laboratory (NREL), Golden, CO, USA M. Amarasinghe University of Illinois at Chicago (UIC), Chicago, IL, USA

In Memory of dr. Herbert schaake (12:00 –12:10)

lunCH (12:10–1:30)

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4: MaterIals I (1:30 – 3:00 pm)

Chair: t. almeida U.S. Army NVESD, Fort Belvoir, VA, USA

Co-Chair: J. arias CACI / NVESD, Fort Belvoir, VA, USA

4.1 Invited Paper: recent Progress on HgCdte (1:30) by MBe of sItP L. Chen, X. Fu, W. Wang, C. Shen, S. Bu, X. Hu, Z. Ye, R. Ding, L. He Shanghai Institute of Technical Physics, Shanghai, China

4.2 MBe-Grown HgCdse Infrared Materials on (2:00) Gasb substrates W. Lei, I. Madni, Y. L. Ren, G. A. Umana-Membreno, L. Faraone University of Western Australia, Crawley, Australia

4.3 sub-Micronic-resolution Investigation of (2:15) Internal and external strain in HgCdte Photodiodes A. Tuaz, P. Ballet University Grenoble Alpes, CEA-LETI, MINATEC Campus, Grenoble, France X. Biquard, F. Rieutord University Grenoble Alpes, CEA-INAC, MEM, Grenoble, France

4.4 Invited Paper: Progress on large-size MBe (2:30) HgCdte wafers with low Process Induced defects M. Reddy Raytheon Vision Systems, Goleta, CA, USA

BreaK (3:00–3:15)

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5: MaterIals II (3:15 – 5:45 pm)

Chair: t. almeida U.S. Army NVESD, Ft. Belvoir, VA, USA

Co-Chair: J. arias CACI/NVESD, Ft. Belvoir, VA, USA

5.1 Invited Paper: topological Insulator superlattices (3:15) P. Klipstein SemiConductor Devices, Haifa, Israel

5.2 Impurity ‘Hot spots’ in MBe HgCdte/CdZnte (3:45) J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez, J. M. Arias, P. J. Smith, R. N. Jacobs, J. K. Markunas, L. A. Almeida, A. Stoltz, U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate A. Wang EAG Laboratories P. S. Wijewarnasuriya U. S. Army Research Laboratory M. Reddy, J. Peterson, S. M. Johnson, B. Hanyaloglu, J. Bangs, D. D. Lofgreen Raytheon Vision Systems

5.3 Current limitations and desired (4:00) advancements of CdZnte substrates for HgCdte Growth by Molecular Beam epitaxy A. Yulius, M. Carmody, D. Edwall, J. Ellsworth, E. Arkun, B. Shojaei, R. Cottier, M. Zandian, E. Piquette, D. Lee Teledyne Imaging Sensors, Camarillo, CA, USA

5.4 CdZnte substrate surface Preparation (4:15) technology at aselsan, Inc. for MBe Growth of High-Quality HgCdte epilayers B. Asici, H. C. Eroglu, Y. Ergunt, A. San, S. Ozer ASELSAN, Inc., Ankara, Turkey

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5.5 relationships of twin and Precipitation (4:30) distribution with Growth solid-liquid Interface in Cd 0.96 Zn 0.04 te Crystals C. Xu, C. Zhou Chinese Academy of Sciences, Shanghai, China and University of Chinese Academy of Sciences, Beijing, China S. Sun, H. Yu, J. Yang Chinese Academy of Sciences, Shanghai, China

5.6 Material and Process development for (4:45) lw PIn HgCdte Photodiodes R. Kodama, S. Velicu EPIR Inc., Bolingbrook, IL, USA J. H. Park, J. Zhao, F. Aqariden EPIR Technologies Inc., Bolingbrook, IL, USA P. Wijewarnasuriya US Army Research Laboratory, Adelphi, MD, USA

5.7 Investigating the electron-Phonon Coupling (5:00) of MBe-Grown Hg 1-x Cd xse semiconductor alloys F. C. Peiris, M. V. Lewis, K. Vanderhoof Kenyon College, Gambier, OH, USA G. Brill US Army Research Laboratory, Adelphi, MD, USA K. Doyle Raytheon Vision Systems, Goleta, CA, USA T. H. Myers Texas State University, San Marcos, TX, USA

5.8 development of nanostructred antirefelction (5:15) Coatings for eO/Ir Optical systems G. G. Pethuraja, J. W. Zeller, R. E. Welser, A. K. Sood Magnolia Optical Techinolgies, Inc., Wolburn, MA, USA and Albany, NY, USA H. Efstathiadis, P. Haldar SUNY Polytechnic Institute, Albany, NY, USA P. S. Wijewarnasuriya US Army Research Laboratory, Adelphi, MD, USA N. K. Dhar US Army Night Vision & Electronic Sensors Directorate, Ft. Belvoir, VA, USA

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5.9 effect of Graphene Buffer layer on the (5:30) van der waals epitaxy of Cdte thin Films D. Mohanty, Z. Lu, X. Sun, S. Zhang, M. Washington, G.-C. Wang, T.-M. Lu, I. B. Bhat Rensselaer Polytechnic Institute, Troy, NY, USA

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POster sessIOns (6:00 – 7:30 pm)

P.1 Grain-size Growth and efficient Iron diffusion in Polycrystalline Zns under Hot Isostatic Pressing O. Gafarov, V. Fedorov, S. Mirov University of Alabama at Birmingham, Birmingham, AL, USA

P.2 ultrasonic treatment effects on Cus 1.8 –Cdse structures O. Olikh, B. Polonsky Taras Shevchenko National University of Kyiv, Kyiv, Ukraine

P.3 Inductively Coupled Plasma-Induced electrical damage on HgCdte etched surface at Cryogenic temperature L. F. Liu, Y. Y. Chen Chinese Academy of Sciences, Shanghai, China and University of Chinese Academy of Sciences, Beijing, China Z. H. Ye, X. N. Hu, R. J. Ding, L. He Chinese Academy of Sciences, Shanghai, China

P.4 detailed Optoelectronic Characterization of wide-Bandgap Hg 3se 2I2 semiconductor for Hard radiation detection S. Das, J.-I. Kim, J. A. Peters, Z. Liu, Y. He, O. Kontsevoi, M. G. Kanatzidis, B. W. Wessels Northwestern University, Evanstron, IL, USA

P.5 COts-Based small-Form-Factor Infrared Cameras with soft-sealed IdCas H. Vemuri, B. Benapfl, C. Grein, J. L. Miller, S. Sivananthan Episensors, Inc., Bolingbrook, IL, USA

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P.6 a Compact solid-state uv Flame-sensing system Based on wide-Gap II-vI thin-Film Materials Y. Liu, L.-X. Pang, J. Liang, M.-K. Cheng, J. J. Liang, J. S. Chen, Y.-H. Lai, I.-K. Sou Hong Kong University of Science and Technology, Hong Kong, China

P.7 Colloidal Hgte Photovoltaic detector for 3-5 µm M. Ackerman University of Chicago, Chicago, IL, USA P. Guyot-Sionnest James Francki Institute, Chicago, IL, USA

P.8 electron Beam Induced Current study of vlwIr HgCdte Photodiodes A. Yèche, F. Boulard, O. Gravrand University Grenoble Alpes, CEA-LETI, Grenoble, France

P.9 low-temperature Carrier-transport Measurements on low-doped HgCdte J. Easley, J. Philips University of Michigan, Ann Arbor, MI, USA E. Arkun, M. Carmody Teledyne Imaging Sensors, Camarillo, CA, USA

P.10 effect of Graphene Buffer layer on the van der waals epitaxy of Cdte thin Films D. Mohanty, Z. Lu, X. Sun, S. Zhang, M. Washington, G.-C. Wang, T.-M. Lu, I. B. Bhat Rensselaer Polytechnic Institute, Troy, NY, USA

P.11 absorption Characteristics of very-long- wavelength Infrared type-III superlattices P. Man, Y. Chang, C. H. Grein, S. Sivananthan University of Illinois at Chicago, Chicago, IL, USA F. Aqariden, Jun Zhao, N. Mahendranathan EPIR Technologies, Bolingbrook, IL, USA

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P.12 Mid-wave Infrared Photodetectors Based on Black Phosphorous arsenic alloys M. Amani, J. Bullock, A. Javey University of California, Berkeley, Berkeley, CA, USA and Lawrence Berkeley National Laboratory, Berkeley, CA, USA

P.13 numerical Modeling of the Optical Performance of Infrared Photodetectors with dark-Current Control structures A. Glasmann, T. Hubbard, E. Bellotti Boston University, Boston, MA, USA

P.14 Micro-Opto-electro-Mechanical (MOeMs) MwIr Fabry-Perot Filters for Hyperspectral Imaging D. Admassu, T. Durowade, S. Sivananthan University of Illinois at Chicago, Chicago, IL, USA W. Gao, S. Velicu EPIR Technologies, Inc., Bolingbrook, IL, USA

P.15 numerical Modeling of three-dimensional Microlenses for Ir Focal-Plane arrays T. Hubbard, B. Appleton, A. Glasmann, E. Bellotti Boston University, Boston, MA, USA

P.16 demonstration of dual-Band Mid-wavelegth HgCdte detector Operating in room temperature P. Martyniuk, P. Madejczyk, J. Rutkowski Military University of Technology, Warsaw, Poland W. Gawron Military University of Technology, Warsaw, Poland and VIGO System S.A., Ożarów Mazowiecki, Poland

reCePtIOn / taBletOPs (6:00–7:30)

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wednesday, nOveMBer 1, 2017 Chicago river Ballroom (7:30 am – 5:45 pm) registration (7:30–5:00)

Continental Breakfast (7:30–9:30)

KeynOte address (8:45 – 9:15 am)

dr. Jay lewis Deputy Director, DARPA Microsystems Technology Office (MTO), Fairfax, VA,USA “Wafer Scale Infrared Detectors (WIRED) and related programs at DARPA-MTO” This talk will be an overview of the DARPA WIRED program, and set the stage for a series of contributed presentations based on that work. In addition, we will discuss other EO/IR programs at DARPA, including the Reconfigurable Imaging (ReImagine) program.

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6: IndustrIal OvervIew II (9:15 – 10:15 am)

Chair: s. sivananthan University of Illinois at Chicago, Chicago, IL, USA

6.1 Invited Paper: an update on teledyne’s (9:15) II-vI technologies and Image sensors, and the science that they enable J. Beletic Teledyne Imaging Sensors, Camarillo, CA, USA

6.2 Invited Paper: 30 years of MCt excellence (9:45) at sofradir: achievements and Future Challenges D. Billon-Lanfrey, L Rubaldo, A. Brunner, N. Péré-Laperne, J. Berthoz, T. Grenouilloux, A. Kerlain, A. Nedelcu, V. Destefanis, R. Taalat, B. Brosse SOFRADIR, Palaiseau, France P. Guinedor SOFRADIR, Palaiseau, France and IMEP-LAHC, MINATEC-INPG, Grenoble, France C. Durnez SOFRADIR, Palaiseau, France and Université de Toulouse, Toulouse, France O. Gravrand, J. Rothman CEA-LETI, MINATEC Campus, Grenoble, France

BreaK (10:15–10:30)

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7: suPerlattICe & BarrIer devICes (10:30 am – 12:15 pm)

Chair: e. Piquette Teledyne, Camarillo, CA, USA

Co-Chair: t. Myers Texas State University- San Marcos, San Marcos, TX, USA

7.1 Invited Paper: type-II superlattices and (10:30) Barrier Infrared detectors D. Z. Ting, A. Soibel, A. Khoshakhlagh, S. D. Gunapala California Institute of Technology, Pasadena, CA, USA

7.2 type II superlattice Infrared detector (11:00) technology at sCd P.C. Klipstein, E. Avnon, Y. Benny, R. Fraenkel, S. Gliksman, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, I. Marderfeld, Y. Nechemya, M. Nitzani, N. Rappaport, I. Shtrichman, N. Snapi, and E. Weiss SemiConductor Devices, Haifa, Israel

7.3 HgCdte nBn Photodetector with δ- doped Barrier (11:15) ND Akhavan, G. Umana-Membreno, R Gu, J. Antoszewski, L. Faraone University of Western Australia, Crawley, Australia

7.4 absorption Characteristics of very-long- (11:30) wavelength Infrared type-III superlattices P. Man, Y. Chang, C. H. Grein, S. Sivananthan University of Illinois at Chicago, Chicago, IL, USA F. Aqariden, J. Zhao, N. Mahendranathan EPIR Technologies, Bolingbrook, IL, USA

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7.5 Inductively Coupled Plasma Hydrogenation (11:45) of lwIr type-II superlattices P. Boieriu, C. Grein, C. Buurma, J. Feldman, R. Pimpinella, A. Ciani Sivananthan Laboratories, Inc., Bolingbrook, IL, USA A. Soibel, D. Z. Ting California Institute of Technology, Pasadena, CA,USA

7.6 dFt Calculations of the Formation energy (12:00) and valence Band edge on sb disordered and Clustered lwIr Inas/Inassb type-II superlattices C. Buurma, A. Ciani, C. Grein Sivananthan Laboratories, Bolingbrook, IL, USA

lunCH (12:15–1:30)

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8: waFer sCale InFrared deteCtOrs and QuantuM dOt MaterIals and devICes I (1:30 – 3:00 pm)

Chair: J. lewis DARPA, Fairfax, VA, USA

8.1 Invited Paper: Colloidal Quantum dots for (1:30) Infrared Photodetection P. Guyot-Sionnest University of Chicago, Chicago, IL, USA

8.2 Colloidal Quantum-dot Infrared Focal Plane (2:00) arrays and Photodetectors S. Keuleyan, D. M. N. M. Dissanayake, C. Weber, C. Teters, A. S. Huntington, P. Hugger, A. Colbert, J. Antolin, G. M. Williams Voxtel, Inc., Beaverton, OR, USA

8.3 Pbs Colloidal Quantum-dot device (2:15) Performance and Modeling E. Klem, D. Temple RTI International, Research Triangle Park, NC, USA A. I. D’Souza, E. Robinson, C. Li DRS Network & Imaging Systems, Cypress, CA, USA P. Wijewarnasuriya US Army Research Labs., Adelphi, MD, USA W. Palosz, S. Trivedi Brimrose Corporation, Sparks, MD, USA E. Bellotti, T. Hubbard, B. Lukose Boston University, Boston, MA, USA

8.4 simulation of Charge transport in lead (2:30) sulfide nanocrystals B. Lukose, S. Dominici, A. Kyrtsos, E. Bellotti Boston University, Boston, MA, USA

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8.5 Materials and electrical-transport Properties (2:45) of sensitized Pbse Films for Ir detectors M.-H. Jang, M. C. Gupta University of Virginia, Charlottesville, VA, USA S.-S. Yoo, M. T. Kramer Northrop Grumman Corporation, Rolling Meadows, IL, USA N. K. Dhar US Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA

BreaK (3:00 –3:15)

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9: waFer sCale InFrared deteCtOrs and QuantuM dOt MaterIals and devICes II (3:15 – 5:45 pm)

Chair: J. Burns Air Force Research Laboratory, AFRL/RXAN, Wright-Patterson AFB, OH, USA

9.1 Pbse Fim deposition using Flow-limited (3:15) Field-Injection electrostatic spraying R. Kustra, R. Vesto, H. Choi, K. Kim University of Illinois at Urbana-Champaign, Urbana, IL, USA

9.2 a Multiscale Materials-to-systems Model for (3:30) Pbse Mid-Ir Photodetectors S. Ganguly, Y. Tan, A. W. Ghosh University of Virginia, Charlottesville, VA, USA J. Lee, P. Martin, S.-S. Yoo Northrop Grumman Corp., Rolling Meadows, IL, USA

9.3 High-Operating-temperature MwIr (3:45) Photodetector development using Polycrystalline Pbse technology S.-S. Yoo, J. Lee, C. Kauffman, T. K. Steinbach, P. Martin, J. Tucek Northrop Grumman Missions Systems, Rolling Meadows, IL, USA S. An University of Illinois at Chicago, Chicago IL, USA

9.4 development of low-Cost uncooled Iv-vI / (4:00) II-vI Heterojunction MwIr detector for Monolithically Integrated Focal Plan array Z. Shi, L. McDowell, Q. Phan, B. Weng, X. Shi University of Oklahoma, Norman, OK, USA J. Qiu, Z. Cai University of Oklahoma, Norman, OK, USA and Nanolight, Inc.

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9.5 disordered Inas(sb) MwIr detectors: (4:15) Growth and device schemes for direct Integration with rOICs B.-M. Nguyen, Y. Cao, A. J. Williams, J. R. Jenkins, D. E. Carrasco, R. Li, S. Bui, B. Z. Nosho, T. J. de Lyon, R. D. Rajavel HRL Laboratories, LLC, Malibu, CA, USA

9.6 Modeling of Grain Boundaries in Inas (4:30) A. Murat, E. Bellotti Boston University, Boston, MA, USA B.-M. Nguyen, R. D. Rajavel HRL Laboratories, Malibu, CA, USA

9.7 Modeling electronic Properties of defects (4:45) and dopants in III-as Materials J. Dadras, C. Ratsch University of California, Los Angeles, Los Angeles, CA, USA B.-M. Nguyen HRL Laboratories, Malibu, CA, USA

9.8 ultrafast, uncooled long-wave Infrared (5:00) detection Based on Mono-layer Graphene D. Chanda, M. Leuenberger University of Central Florida, Orlando, FL, USA

9.9 enhanced Broadband absorption in (5:15) Graphene using a nanoantenna-Integrated Optical Cavity V. R. Shrestha, Y. Gao, K. B. Crozier University of Melbourne, Victoria, Australia M. Amani, A. Javey University of California, Berkeley, Berkeley, CA, USA and Lawrence Berkeley National Laboratory, Berkeley, CA, USA

9.10 Mid-wave Infrared Photodetectors Based (5:30) on Black Phosphorous arsenic alloys M. Amani, J. Bullock, A. Javey University of California, Berkeley, Berkeley, CA, USA and Lawrence Berkeley National Laboratory, Berkeley, CA, USA

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thursday, november 2 Chicago river Ballroom (7:30 am – 4:45 pm) registration (7:30–2:00)

Continental Breakfast (7:30–9:30)

10: IndustrIal OvervIew III / devICes II (8:15 – 10:45 am)

Chair: n. dhar U.S. Army NVESD, Ft. Belvoir, VA, USA

Co-Chair: e. Bellotti Boston University, Boston, MA, USA

10.1 Invited Paper: sensing the spectrum at rvs (8:15) L. Chen Raytheon Vision Systems, Goleta, CA, USA

10.2 Invited Paper: room-temperature Infrared (8:45) Focal-Plane-array Performance M. A. Kinch Consultant, Dallas, TX, USA

10.3 MwIr MBe HgCdte/CdZnte HdvIP Focal (9:15) Plane arrays Operating at elevated temperatures C. Schaake, R. Strong, L. Robertson, S. Ajmera, M. Kinch Leonardo DRS, Dallas, TX, USA J. Zhao, F. Aqariden EPIR Technologies, Bolingbrook, IL, USA

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10.4 development of very-thin High-Performance (9:30) HgCdte devices by Inserting diffractive elements P. S. Wijewarnasuriya, K.-K. Choi, J. Schuster, G. Meissner, K. Olver, Y. Chen, B. Tennant, E. DeCuir Jr., J. Pattison U.S. Army Research Laboratory, Adelphi, MD, USA N. K. Dhar, M. Jaime-Vasquez, R. Jacobs, J. Markunas, D. Benson U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA , USA

10.5 rts noise studies on new HgCdte MwIr (9:45) detectors at sofradir A. Brunner, L. Rubaldo, P. Guinedor, A. Kerlain, V. Destefanis, N. Péré-Laperne, D. Sam-Giao, L. Dargent, E. Carrere, C. Cassillo, F. Dupont Sofradir, Veurey-Voroize, France

10.6 a HgCdte-Based Photodetector for (10:00) low-Flux spectroscopic lunar Measurements W. Gao, S. Velicu EPIR, Inc., Bolingbrook, IL, USA H. Vemuri, B. Benapfl EpiSensors, Bolingbrook, IL, USA

10.7 short-wave Infrared HgCdte electron (10:15) avalanche Photodiodes for Gated-viewing A. Sieck, M. Benecke, D. Eich, R. Oelmaier, J. Wendler, H. Figgemeier AIM Infrarot-Module GmbH, Heilbronn, Germany

10.8 shockley-read-Hall lifetime study and (10:30) Implication in HgCdte Photodiodes for Ir detection O. Gravrand, J. Rothman, B. Delacourt, F. Boulard, C. Lobre, P. Ballet, J. L. Santaillé, D. Brellier CEA-LETI-MINATEC, Grenoble, France N. Péré-Laperne, V. Destefanis, A. Kerlain Sofradir, Palaiseau, France

BreaK (10:45–11:00)

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11: devICes III (11:00 am – 12:15 pm)

Chair: P. Mitra DRS Technologies, C4ISR TX, Dallas, TX, USA

Co-Chair: M. reine Consultant, Infrared Detectors, Cambridge, MA, USA

11.1 Invited Paper: development of Photon (11:00) Counting detectors using Inas avalanche Photodiodes with negligible excess noise C. H. Tan, J. S. Ng, X. Zhou, J. David, S. Zhang, A. Krysa University of Sheffield-North Campus, Sheffield, UK

11.2 numerical Modeling of the Optical (11:30) Performance of Infrared Photodetectors with dark Current Control structures A. Glasmann, T. Hubbard, E. Bellotti Boston University, Boston, MA, USA

11.3 Micro-Opto-electro-Mechanical (MOeMs) (11:45) MwIr Fabry-Perot Filters for Hyperspectral Imaging D. Admassu, T. Durowade, S. Sivananthan University of Illinois at Chicago, Chicago, IL, USA W. Gao, S. Velicu EPIR Technologies Inc., Bolingbrook, IL, USA

11.4 Origin of 1/f noise in electronic devices (12:00) P. Norton, N. Blackwell, P. Maloney Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA

lunCH (12:15–1:30)

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12: MOdelInG & CHaraCterIZatIOn I (1:30 – 2:45 PM)

Chair: P. wijewarnasuriya U.S. Army Research Laboratory, Adelphi, MD, USA

Co-Chair: w. Clark U.S. Army Research Office, Durham, NC, USA

12.1 Physics-Based design of depleted HgCdte (1:30) Infrared detectors J. Schuster US Army Research Laboratory, Adelphi, MD, USA and Boston University, Boston, MA, USA E. A. DeCuir Jr., P. S. Wijewarnasuriya US Army Research Laboratory, Adelphi, MD, USA

12.2 non-Monochromatic 3d Optical simulation (1:45) of HgCdte Focal Plane arrays M. Vallone, A. Palmieri, M. Calciati, F. Cappelluti, G. Ghione Politecnico di Torino, Torino, Italy F. Bertazzi, M. Goano Politecnico di Torino, Torino, Italy and CNR-IEIIT, Torino, Italy M. Bahl, E. Heller, R. Scarmozzino Synopsys Inc., Ossining, NY, USA S. Hanna, H. Figgemeier AIM Infrarot-Module GmbH, Heilbronn, Germany

12.3 numerical Modeling of three-dimensional (2:00) Microlenses for Ir Focal Plane arrays T. Hubbard, A. Glasmann, E. Bellotti Boston University, Boston, MA, USA

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12.4 Improving the antimony distribution in (2:15) Ga‐Free type‐II superlattice A. J. Ciani Sivananthan Laboratories, Bolingbrook, IL, USA C. H. Grein University of Illinois at Chicago, Chicago, IL, USA

12.5 High-resolution study of defects and (2:30) Interfaces in HgCdte-Based lwIr devices architectures R. F. Klie EPIR Inc., Bolingbrook, IL, USA and University of Illinois at Chicago, Chicago, IL, USA J. Guo University of Illinois at Chicago, Chicago, IL, USA R. Kodama, S. Velicu EPIR Inc., Bolingbrook, IL, USA

BreaK (2:45–3:00)

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13: MOdelInG & CHaraCterIZatIOn II (3:00 – 4:00 pm)

Chair: P. wijewarnasuriya Army Research Laboratory, Adelphi, MD, USA

Co-Chair: w. Clark U.S. Army Research Office, Durham, NC, USA

13.1 Predicting Point-defect Formation energies (3:00) from statistical learning of Bulk Properties J. B. Varley, A. Samanta, V. Lordi Lawrence Livermore National Laboratory, Livermore, CA, USA

13.2 High-Mobility long-wave HgCdte with low (3:15) Indium doping levels A. E. Brown, J. D Benson US Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA J. Ellsworth, M. Carmody, D. Lee Teledyne Scientific and Imaging, Camarillo, CA, USA J. Arias US Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA and CACI Technologies, Arlington, VA, USA

13.3 Fully automated Measurement and analysis (3:30) of reciprocal space Maps M. Hawkridge PANalytical. Westborough, MA, USA L. Grieger, J. F. Woitok PANalytical B.V., Almelo, The Netherlands G. Tye PANalytical Research Centre, Brighton, UK

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13.4 strain analysis of Cdte on Insb epitaxial (3:45) structures using X-ray-Based reciprocal space Measurements and dynamical diffraction simulations M. Liao, M. Goorsky University of California, Los Angeles, CA, USA C. Campbell, C.-Y. Tsai, Y.-H. Zhang Arizona State University, Tempe, AZ, USA

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14: late-news PaPers (4:00 – 4:15 pm)

14.1 Correlative Property and structure (4:00) Characterization of Individual extended defects in solar Cells Q. Chen, S. Zhang, Y. Zhang University of North Carolina at Charlotte, Charlotte, NC, USA B. McKeon, D. Smith Arizona State University, Tempe, AZ, USA C.-K. Hu University of North Carolina at Charlotte, Charlotte, NC, USA and Wuhan University of Technology, Wuhan, China T. H. Gfroerer Davidson College, Davidson, NC, USA M. W. Wanlass National Renewable Energy Laboratory, Golden, CO, USA

wIllIaM e. sPICer and tHOMas n. CasselMan Best student Paper award (4:15 – 4:30 pm)

ClOsInG reMarKs (4:30 –4:45)

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nOtes

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nOtes