The Opto-Electronics of Solar Cells Recent Advances in Colloidal Quantum Dot Photovoltaics

Home , Ernst Weber (engineer), IEEE Edison Medal, IEEE Founders Medal, IEEE Honorary Membership, IEEE Photonics Award, IEEE Simon Ramo Medal

February 2013 Vol. 27, No. 1 www.PhotonicsSociety.org

Also Inside: • IEEE Photonics Society 2013 Fellows • 2013–15 Elected Members of Board of Governors PDLE-101: PDL Source/Emulator Complete Instrument Suite for Testing PolarizationPo Performance

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The Opto-Electronics of Solar Cells Recent Advances in Colloidal Quantum Dot Photovoltaics Cover Image: Improvement in solar cell efficiency: good external luminescence is good for solar cell efficiency.

Also Inside: • IEEE Photonics Society 2013 Fellows • 2013–15 Elected Members of Board of Governors

February 2013 Volume 27, Number 1

FEATURES

Research Highlights: ...... 4 –– The Opto-Electronics of Solar Cells –– Recent Advances in Colloidal Quantum Dot Photovoltaics ��6

7 News ...... 14 .

X • Newly Elected Members to the Board of Governors 2013–2015 • Tingye Li—The High-Tech “Diplomat” bridging the West and the East—passed away on 27 December 2012, aged 81 X • Call for Fellow Nominations • Nomination for IEEE Photonics Society 2013 Distinguished Service Award • IEEE Photonics Society 2013 Awards Reminder EmptyEmpty Halogen-FilledHalogen-Filled • IEEE Medal 2014 Call for Nominations TrenchTrench TrenchTrench

Organic Hybrid Careers and Awards ...... 21 . • IEEE Photonics Society Awards Deadline • John Tyndall Award Recipient:James Coleman • IEEE Photonics Society 2013 Fellows Announced • IEEE Photonics Society 2013 Young Investigator Award Recipient:Alexandra Boltasseva

Membership ...... 26 . • Benefits of IEEE Senior Membership • Newly Elevated Senior Members

Conferences ...... 27 . • IPS Conference Calendar • Conference (OFC/NFOEC) 2013 • OFC/NFOEC 2013 Preview • Optical Interconnect Conference 2013 24 • Summer Topicals Call for Papers • Group IV Photonics 2013 • Avionics, Fiber-Optics & Photonics Call for Papers • IEEE Photonics Conference Call for Papers • Conference Help • Forthcoming meetings with ICO participation • 2013 IPS Co-Sponsored Calendar

Publications ...... 39 . • Call for Papers: – JSTQE: Optical Modulators – Technologies and Applications – JSTQE: Graphene Optoelectronics – JSTQE: Biophotonics – JSTQE: Nanobiophotonics – JSTQE: Silicon Photonics

COLUMNS

Editor’s Column ...... 2 President’s Column ...... 3

February 2013 IEEE Photonics Society NEWSLETTER 1 Editor’s IEEE Photonics Society Column HON TSANG President Newsletter Staff Hideo Kuwahara Executive Editor Fujitsu Laboratories In this first issue of 2013, I would like to take this op- Hon K. Tsang 4-1-1, Kamikodanaka, Nakahara Department of Electronic Engineering portunity to thank the many authors who have contrib- Kawasaki, 211-8588, Japan The Chinese University of Hong Kong Tel: +81 44 754 2068 uted to the Newsletter, the associate editors in finding Shatin, Hong Kong Fax: +81 44 754 2580 Tel: +852 - 39438254 so many high quality articles, and Lisa Manteria’s help Email: [email protected] Fax: +852 - 26035558 in particular for getting each issue of the Newsletter out Email: [email protected] on time. I am writing this editorial before Christmas and Past President Associate Editor of Asia & Pacific James Coleman so I also wish to extend the seasons greeting to all read- Christina Lim Dept of E & C Engineering Department of Electrical & ers and wish you all a happy New Year (perhaps not as University of Illinois Electronic Engineering 208 N. Wright Street belated as the first day of the Chinese New Year, the Year The University of Melbourne Urbana, IL 81801-2355 VIC 3010 Australia of the Snake, is on 10 February 2013). I know that it Tel: +217 333 2555 Email: [email protected] Tel: +61-3-8344-4486 takes many long hours for authors to write their articles Email: [email protected] for the newsletter and I hope that we will continue to Associate Editor of Canada get high quality contributions from our readers in 2013; Secretary-Treasurer Dalma Novak Lawrence R. Chen although the newsletter articles are not in IEEE Xplore, Pharad, LLC Department of Electrical & Computer Engineering hardcopies of the newsletter are sent directly to most 797 Cromwell Park Drive Suite V McConnell Engineering Building, members of IEEE Photonics Society, and all the volumes Glen Burnie, MD 21061 Rm 633 of the Newsletter are archived online and freely they are Tel: +410 590 3333 McGill University Email: [email protected] 3480 University St. as freely available as any open access journal at http:// Montreal, Quebec Canada H3A-2A7 photonicssociety.org/content/newsletters. Board of Governors Tel: +514 398 1879 In this month’s issue the Research Highlights has the J. S. Aitchison P. Andrekson Fax: 514 398 3127 S. Bigo M. Dawson Email: [email protected] theme of solar energy. Prof Eli Yablonovitch, Director P. J uod a w l k i s A . K i r k of the NSF Center for Energy Efficient Electronics Sci- F. Koyama J. McInerney Associate Editor of Europe/ M. Nakazawa D. Novak Mid East/Africa ence, a multi-University Center based at U.C. Berkeley, P. Sm ow to n M . Wu Kevin A. Williams describes the recent breakthrough in energy efficient Eindhoven University of Technology Inter-University Research Institute solar cells. Professor Yablonovitch is perhaps better Vice Presidents COBRA on Communication known for his pioneering works on photonic bandgap, Conferences - D. Plant Technology Finance & Administration – C. Jagadish Department of Electrical for which he received the 2012 IEEE Photonics Award, Membership & Regional Engineering but he has also made many important contributions in Activities – J. Kash PO Box 513 photovoltaics, including the 4n2 light trapping factor Publications – B. Tkach 5600 MB Eindhoven, Technical Affairs – K. Choquette The Netherlands which increased the theoretical efficiency of solar cells Email: [email protected] and is sometimes called the Yablonovitch limit. The Staff Editor second research highlights article feature work at the Lisa Manteria University of Toronto. Susanna Thon and Ted Sargent IEEE Photonics Society 445 Hoes Lane describe their work on colloidal quantum dots (CQD) Piscataway, NJ 08854 for thin film solar cells and the dramatic improvements Tel: 1 732 465 6662 Fax: 1 732 981 1138 in energy conversion efficiency from about 1% in 2005 Email: [email protected] to 7% today using CQD, with the potential to achieve 49% efficiency for triple junction colloidal quantum dot IEEE prohibits discrimination, harassment, and bullying. For more information, visit http://www.ieee.org/web/aboutus/whatis/policies/p9-26.html. solar cells. With OFC coming in March 2013, we also feature a IEEE Photonics Society News (USPS 014-023) is published bimonth- preview of this major conference which will be held in ly by the Photonics Society of the Institute of Electrical and Anaheim this year. Electronics Engineers, Inc., Corporate Office: 3 Park Avenue, 17th Floor, New York, NY 10017-2394. Printed in the USA. One dollar per Finally I would like to remind readers of the com- member per year is included in the Society fee for each member ing deadlines for nominations in the IEEE Photonics of the Photonics Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address Society: The IEEE Photonics Society Distinguished changes to Photonics Society Newsletter, IEEE, 445 Hoes Lane, Lecturer nominations are due on 16 February 2013 Piscataway, NJ 08854. and several awards (e.g., Quantum Electronics Award, Copyright © 2013 by IEEE: Permission to copy without fee all or part of any material without a copyright notice is granted pro- Aron Kressel Award, Engineering Achievement vided that the copies are not made or distributed for direct com- Award) have a nomination deadline in early April— mercial advantage, and the title of the publication and its date appear on each copy. To copy material with a copyright notice please see http://www.photonicssociety.org/award-info requires specific permission. Please direct all inquiries or requests for further information. to IEEE Copyrights Office. Hon Tsang

2 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 President’s Column HIDEO KUWAHARA

Photonics Technology for These are just a few examples, and I think photonics tech- Safe and Secure Society nologies that serve to make society safer and more secure are Last November, the north-east region of the USA suffered con- becoming more and more important. Surely, photonics is a siderable damage from hurricane Sandy. New Jersey and New technical area that is becoming one of the main areas of in- York were among the areas that were hit hardest, and IEEE terest in the future. Again, we still have much work to do in Headquarters also suffered damage, with blackouts and server photonics! troubles. I am sure the staff at IEEE had difficulty in trying to recover, and I sympathize with their troubles. At the same IEEE and Photonics Society Activities time, however, it brings to mind an old Japanese proverb: This year, 2013, is the second year of my term as president, “Kouya no shirobakama,” which means “the dyer wears white” and in this column I would like to thank my IPS colleagues or “the shoemaker’s children go barefoot,” i.e., that special- very much for their very supportive and constructive activities ists often fail to apply their skills to themselves. I think IEEE in 2012. I would like to express special thanks to the Board of should have sufficiently robust and secure ICT systems that Governors members, five Vice Presidents, the Secretary Trea- can serve as a model for the general public. I want to stress surer, and all of the IPS staff. From a financial viewpoint, the that, in constructing such a robust and secure ICT infrastruc- situation of IPS is, fortunately, improving, or at least 2012 ture with abundant capacity, our photonics networking tech- turned out better than previous forecasts. The 2013 IPS bud- nology is surely a unique and inevitable technological solution, get, which reflects a further improvement in our finances, was and much more effort will be necessary to bring about a safer approved at the IEEE TAB (Technical Activities Board) meet- and more secure society in the future. ing held in last November. This November TAB meeting was Aside from Sandy, we are recently experiencing abnormal held by web and telephone conferencing due to the impact of weather all over the world. I think this is caused by global Sandy, and the agenda and discussion items were also severely warming or excess energy consumption, and we must be more reduced because the schedule was shortened from a full two serious in reducing greenhouse gas emissions. That means re- days to just one day. The IEEE is preparing several new in- ducing fossil based energy and increasing renewable energy. novations for the benefit of members, and those items will be Recently photovoltaic technology is undergoing dramatic discussed at the February 2013 TAB meeting. For our IPS, it progress, including the development of new materials and is also time to implement ideas we have discussed and generate structures, such as quantum dots, and is aiming to achieve real outcomes. higher efficiency of 50% or even 75 %. Smart grid technology is also supported by photonics networking. Awards Last December a tunnel accident in a highway occurred The 2013 IEEE Alexander Graham Bell Medal is awarded to in Japan. Ceiling plates in the tunnel, which were construct- Andrew Chraplyvy and Robert Tkach “for contributions to the ed about 35 years ago, fell down and crushed cars. Such old science and technology of optical communications enabling construction structures, which undergo a kind of long term high-speed wavelength division multiplexing through the fatigue, require intensive inspection and maintenance. Con- mitigation of the effects of fiber nonlinearity,” and the 2013 ventional means to diagnose cracks in concrete walls, however, Edison Medal is awarded to Ivan Paul Kaminov “for pioneer- such as tapping with hammer and hearing tones, are very labor ing, life-long contributions to and leadership in photonics de- intensive and not very quantitative. Efficient and cost-effective vices and networks instrumental to global high-capacity op- means using photonics technology have been proposed, such as tical networks.” The 2013 Tyndall Award is awarded to Jim diagnostics using laser remote sensing, in which a Q-switched Coleman, our Past President. The Photonics Society is very laser is used as a probe pulse, and receiving reflected waves. proud of these awardees and their accomplishments. Please join Fiber sensor technologies, such as FBG (Fiber Bragg Grating) me in congratulating them. are also effectively monitoring the strain of structures of build- ings and bridges. With warm wishes, At airports around the world photonics is used to detect Hideo Kuwahara hidden metals or weapons, but more efficient ways to shorten Fellow the waiting lines need to be developed. Fujitsu Laboratories Ltd.

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 3 Research Highlights The Opto-Electronics of Solar Cells Eli Yablonovitch and Owen D. Miller Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA and Electrical Engineering & Comp Sciences Dept., University of California, Berkeley, CA 94720

Abstract—Counter-intuitively, efficient external fluorescence qVOC=- qV OC-Ideal kT ;;ln hext (1) is a necessity for achieving the highest possible solar cell efficiency. Why would a solar cell, intended to absorb light, ben- where hext is the probability of an internally radiated photon efit from emitting light? Although it is tempting to equate eventually escaping from the front surface of the cell. Equa- light emission with loss, paradoxically, light emission actually tion (1) can be derived through the detailed balance method improves the open-circuit voltage, and the efficiency. [2] of Shockley and Queisser (SQ). M. A. Green already in-

ferred [5] the external luminescence yield, hext, of all the differ- There has been great progress in solar cell efficiency, recently, as ent historical solar cell materials, from their respective record shown in Figure 1. After a long period of no improvement, the {VOC-ideal – VOC}, employing eq’n. (1). past two years have witnessed a surge to 28.8% efficiency [1] in As solar efficiency begins to approach the SQ limit, the in- the flat-plate, single junction, record. This is to be compared [2] ternal physics of a solar cell transforms. Shockley and Queisser with the Shockley-Quiesser [3] limit, 33.5% efficiency. showed that high solar efficiency is accompanied by a high The idea that increasing light emission improves open-cir- concentration of carriers, and by strong fluorescent emission cuit voltage seems paradoxical, as it is tempting to equate light of photons. In a good solar cell, the photons that are emitted emission with loss. Basic thermodynamics dictates that materi- internally are likely to be trapped, re-absorbed, and re-emitted, als which absorb sunlight must emit in proportion to their ab- leading to “photon recycling” at open-circuit. This leads to a sorptivity. At open circuit, an ideal solar cell would in fact radi- very different physical picture of high efficiency solar cells, ate out from the solar cell, a photon for every photon that was >26% efficiency, as illustrated in Figure 2. absorbed. Thus the external luminescence efficiency is a gauge of To resolve the paradox of why external luminescence is good for whether additional loss mechanisms are present. At the power- solar cell efficiency, there are a number of different explanations: optimized operating bias point, the voltage is slightly reduced 1) Good external luminescence is a gauge of few internal and 98% of the open-circuit photons are drawn out of the cell as loss mechanisms. At open circuit, an ideal solar cell real current. Good external extraction at open circuit comes at no radiates a photon for every absorbed photon. When penalty in current at the operating bias point. electron-hole pairs recombine non-radiatively or when On thermodynamic grounds, Ross derived [4] that the open photons are absorbed without generating photocarriers circuit voltage is penalized by poor external luminescence efficiency within the active part of the device, both the external hext as: luminescence efficiency and the cell efficiency decrease.

30 1.15 Alta Devices 29 Record Cell, 1.122 volts Alta Devices Record, 28.8% (Volts) 1.10

28 OC 1-Sun, Single Junction, Open Circuit Voltage for 27 Solar Cell Efficiency Record: 1.05 Record Efficiency Cells:

Efficiency (%) 26 1.00 25 Open Circuit Voltage V 24 0.95 1990 1995 2000 2005 2010 1990 1995 2000 2005 2010 Year Year (a) (b)

Figure 1. (a) The single junction, 1-sun, efficiency record, historically. (b) The open circuit voltage of the record solar cells.

4 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 2) External emission of photons into free space is unavoidable. All other losses can, in principle, be eliminated. Thus the total losses are at their very least, when external emission is the only loss mechanism. Maximum external emission is minimum total losses, which leads to the highest efficiency. 3) In un-textured cells, good external luminescence requires recycled photons, and re-absorption. Internal reabsorption recreates the electron- hole pair, effectively extending the minority carrier lifetime. The longer lifetime leads to a higher carrier density. Free energy, or voltage, increases with the logarithm of density. 4) The solar cell and the light-emitting- diode are equivalent, but reciprocal devices. Just as external emission leads to the most efficient light-emit- Figure 2. The physical picture of high efficiency solar cells, compared to conven- ting-diode, the most efficient solar tional cells. In high efficiency solar cells, good luminescent extraction is a require- cell maximizes external emission. ment for the highest open circuit voltages. One-sun illumination is accompanied by 5) External luminescence is some- up to 40-suns of trapped band-edge luminescence, leading to the maximum external fluorescence efficiency. times used as a type of contactless voltmeter, indicating the separation of quasi-Fermi levels in the solar material. This is sometimes employed as a contact- Photovolt: Res. Appl. 20, 2012, pp. 12–20, and earlier less, quality-control-metric, in solar cell manufactur- editions of solar cell records. ing plants. In this viewpoint, it is tautological: Good [2] Owen D. Miller, Eli Yablonovitch, and Sarah R. external luminescence actually IS good voltage, and Kurtz, “Strong Internal and External Luminescence therefore good efficiency. as Solar Cells Approach the Shockley-Queisser Effi- This is the preferred explanation for the paradox: ciency Limit”, J. Photovoltaics, vol. 2, pp. 303–311 Good external luminescence IS good voltage. (2012). [3] W. Shockley and H.J. Queisser, “Detailed Balance Acknowledgement Limit of p-n Junction Solar Cells,” Journal of Applied This work was supported by the DOE “Light-Material Interac- Physics 32, 510 (1961). tions in Energy Conversion” Energy Frontier Research Center [4] R. T. Ross, “Some Thermodynamics of Photochemical under grant DE-SC0001293. Systems,” Journal of Chem. Physics 46, 1967, pp. 4590– 4593. References [5] M. A. Green, “Radiative efficiency of state-of-the-art [1] M. A. Green, K. Emery, Y. Hishikawa, W. Warta, & E. D. photovoltaic cells,” Prog. Photovolt: Res. Appl., Vol. Dunlop, “Solar cell efficiency tables (version 39),” Prog. 20, 472–476, (2012).

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 5 Research Highlights Recent Advances in Colloidal Quantum Dot Photovoltaics Susanna M. Thon and Edward H. Sargent Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario, M5S 3G4, Canada

I. Introduction inorganic-passivated CQD films as shown in Figure 1b. The Colloidal quantum dot (CQD) films are a promising material results indicate relatively large (a1 # 1017 cm–3eV–1) trap for optoelectronic devices including solar cells. Since the first state densities that were confirmed by self-consistent optoelec- demonstrations in 2005[1], the performance of CQD photovol- tronic simulations (Figure 1d) to limit the current performance taic devices has climbed from below 1% to a certified AM1.5 of CQD photovoltaic devices. solar power conversion efficiency of 7.0% [2]. These advances We developed a hybrid passivation method for PbS CQD were due to both improvements in bulk materials properties, films with the goal of reducing the midgap trap state densi- particularly via improved surface passivation, and new device ties while simultaneously producing a dense, absorbing film architectures tailored towards the properties of CQD films. [2]. Our method introduces halide anions in the solution phase CQDs are semiconductor nanostructures synthesized in that bind to sterically hindered inter-cation trenches on the solution. In view of CQDs’ inexpensive materials costs, light Pb rich surfaces of the quantum dots. We also introduce metal weight implementation, large area processing, and high ab- cations during this step that bind unpassivated surface chalco- sorption, there has been much interest in CQDs for third gen- gens and increase the majority carrier mobility in the films by eration photovoltaics [3]. In addition, the bandgap tunability targeting the removal of valence-band associated trap states.

through the quantum size effect offers a natural path to multi- The metal halide salt CdCl2 dissolved in a mixture of tetradec- junction cells that utilize the full solar spectrum. This article ylphosphonic acid and oleylamine and introduced at elevated summarizes key advances in the field. temperatures during CQD synthesis was found to be optimal. We then used a solid-state organic cross-linker treatment, con- II. Hybrid Passivation for sisting of mercaptopropionic acid, which displaced the original Midgap Trap Density Reduction long synthesis ligands that the halide passivants were unable CQD films have a very high surface to volume ratio. This makes to remove and served to densify the film. A schematic of our them especially prone to high trap state densities if surfaces are hybrid passivation scheme for a single quantum dot is shown imperfectly passivated. Typically, long aliphatic ligands are at- in Figure 1a. tached to the CQD surfaces during the solution-phase synthe- Transient photovoltage spectroscopy measurements re- sis [4]. These ligands are then replaced with shorter organic [5] vealed that the midgap density of states in our hybrid-pas- [6] or inorganic [7] ligands in a solid-state treatment during sivated CQD film was fully five times lower than in conven- film formation. The solid state ligand exchange serves to den- tional organic crosslinked and inorganic-only CQD films sify the film for enhanced absorption and improve transport by (Figure 1b). This reduction in trap state density was corre- reducing inter-CQD distances. lated with significant performance increases in photovoltaic The trap state density in CQD films can be quantified us- devices based on the hybrid-passivated films (Figure 1c). An ing transient photovoltage spectroscopy [8]. Previous high- accredited photovoltaics laboratory (Newport Technology and performing devices have used the depleted heterojunction ar- Application Center – PV Lab) measured a power conversion chitecture [9] in which a p-n junction is formed from an n-type efficiency of 7.0%, the highest certified PCE reported for a

transparent conductive oxide such as TiO2 and a p-type CQD CQD solar cell to date. film. When an ideal p-type absorbing film is illuminated, pho- toelectrons are promoted to the conduction band and relax to III. Doping in Colloidal Quantum Dot Solids the band-edge, resulting in an excess free-carrier density that Most CQD photovoltaic devices to date have used a single type can be envisaged as the establishment of two distinct quasi- of CQD (usually p-type) in a heterojunction architecture. Ra- Fermi levels, one for each carrier type. An open circuit voltage, tional understanding and control of the doping in CQD solids

VOC, results from the separation of the quasi-Fermi levels. In a would be beneficial for a wide range of optoelectronic devic- non-ideal semiconductor, much of the photogenerated charge es employing CQD films, including p-n homojunctions and instead goes to filling midgap trap levels. As a result, a smaller all-solution-processed multijunction devices. We developed a

VOC is produced for the same photogeneration rate. Photovolt- generalized framework based on charge-balance considerations age transient spectroscopy probes these processes. to predict the magnitude and type of doping in a wide range Transient photovoltage measurements were recently used of CQD films [10]. Our empirical model requires only knowl- to probe the midgap density of trap states in organic and edge of the bulk stoichiometry of a CQD system and does not

6 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Organic X Inorganic Hybrid /eV) 1017 –3

EmptyEmpty Halogen-FilledHalogen-Filled Measured DOS (cm 16 TrenchTrench TrenchTrench 10

Ev 0.202 040.406 0.608 0.8 Organic Hybrid Ef E – Ev (eV) (a) (b)

) 25 ) 2 HybridHybrid 2 N = 0 Hybrid Certified 25 t N = 10155 cm–3–3 20 Inorganicg t Organic N = 10166 cm–3 20 t

15 15 )

% 2 ( 80 J = 22.322.3 mA / /cmcm 10 SCSC E 10

Q 60 40 CB 5 20 5 0 VB

Measured EQE (%) E 440000 600 800 11,000,000 1 1,200,200

WavelengthWavelenggth (nm)(nm)m Modelled Current Density (mA /cm Measured Current Density (mA /cm 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.2 0.4 0.6 0.8 Voltage (V) Voltage (V) (c) (d)

Figure 1 (a) Schematic cross-section of a PbS CQD with organic passivation (left), in which bulky alkanethiol molecules are unable to penetrate inter-lead atom trenches, and hybrid passivation (right) in which small halide atoms can effectively passivate all exposed lead atoms. (b) Density of states within the bandgap of differently-passivated PbS CQD films measured by transient photovoltage spectroscopy. (c) Measured current-voltage curves under AM1.5 simulated solar illumination for devices employing different passivation schemes. Black diamonds are the J-V curve for a hybrid-passivated device measured at an accredited photovoltaic calibration laboratory. (d) Simulated J-V curves of devices with different midgap trap state densities. (a)-(d) Reprinted with permission from Reference 2.

depend on the details of the atomic structure of the individual where Ni is the number of species of type i composing the CQD

bonds and nanoparticles. and qi are their corresponding oxidation states. The charge-orbital balance model compares the number of We used our empirical model to study doping in PbS valence electrons available in the system with the number of CQDs where both remote and substitutional doping are orbitals in the valence shell. The number of excess electrons in expected to impact the net free carrier density. In the re- the system is then given by: mote doping configuration, surface ligands such as thiols or halide atoms facilitate charge transfer between the highest / atom QD NNNexc =-atoms e orb (1) occupied molecular orbital (HOMO) of the ligand and the conduction band of the nanocrystal (the analogous process atom where Ne represents the number of valence electrons per can also happen for the valence band case). In the substitu- QD atom and Norb is the number of available orbitals, a property tional doping configuration, dopants can incorporate into of the system as a whole. The number of orbitals of the sys- the nanocrystal core by replacing lattice atoms as in conven- tem can be computed following valence bond theory. In ionic tional bulk semiconductors. These situations are depicted CQD systems, it is sufficient to count the valence orbitals of in Figure 2a–d. An iodine atom, e.g., can act as either a p- the CQD on a per atom basis, i.e. where the oxidation state of type or n-type dopant depending on whether it is incorpo- each atom can be used as a proxy for the number of contributed rated as a remote dopant or a substitutional dopant. Using electrons. This simplifies Equation 1 to the charge-orbital balance model, an iodine atom adsorbed

on a CQD surface results in Nexc changing to –1, equivalent

NNqexc = / i ii (2) to the contribution of a free hole. This is balanced by the

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 7 K+1 HOMO Ec Ec PbS CQD L PbS CQD O E W v l–1 Ev HOMO (a) (b) Source Drain –2 +2 l–1 –2 +2 PbS CQD Film

–2 +2–2 +2 –2 +2 l–1 +2 Metal Gate Metal Gate Oxide Organic Surfactant +2 –2 +2 –2 +2 –2 +2 –2 (e) +2 –2 +2 –2

Vgate (V) 0.80 1E–7 Vdrain = 1V 2.5

0.60 1E–8 2.25 0.40 1E–9

0.20 2 Drain Current (A) 1E–10 Drain Current ( µ A) 1.75 1.5 0.00 1.25 1E–11

–2 –1 0 1 2 0.0 0.2 0.4 0.6 0.8 1.0 Gate Voltage (V) Drain Voltage (V) (f) (g)

Figure 2 (a) Electron transfer from a remote cation HOMO to a CQD conduction band leads to n-type behavior. (b) Electron transfer from a CQD valence band to a remote anion HOMO leads to p-type behavior. (c) Atomic depiction of the remote doping scenario in part b with oxidation states labeled. (d) Atomic depiction of substitutional doping by a cation. (e) CQD FET structure. (f) A conduct- ing electron channel demonstrates n-type response by the FET. (g) Output characteristics of the CQD FET showing gate modulation of the channel over a range of voltages. (a)–(d) Reprinted with permission from Reference 10. Copyright 2012 American Chemical Society. (e)–(g) Reprinted with permission from Reference 12.

charge of the iodine atom, and no net doping results. When We fabricated n-type CQD films using a solid-state ligand

an iodine atom substitutes for a sulfur atom, Nexc computes exchange where the long organic synthesis ligands were re- to +1, corresponding to the contribution of a free electron, placed with small inorganic ligands by treating the films with resulting in n-type doping. a tetrabutylammonium iodide (TBAI) in methanol solution Given that our model predicted that certain halides could [12]. The film fabrication was carried out in a rigorously inert act as n-type dopants when incorporated into PbS CQD environment (oxygen levels were less than 5 ppm). films, we sought to make an n-doped film for use in photo- Doping and transport behaviour was characterized using voltaics. Past efforts along these lines had been hindered by thin-film field effect transistors (FETs). The device structure the incorporation of oxygen into the films. Oxygen is a well- is shown in Figure 2e. The device exhibited an n-type transfer known acceptor in bulk and CQD PbS [11]. Its incorpora- response (Figure 2f) with an extracted mobility of 0.1 cm2 V–1 s–1; tion p-dopes CQDs at double the rate of typical monovalent a record at the time for PbS CQDs. The FET output character- ligand species because of its oxidation state of –2. Commonly istics are shown in Figure 2g. employed organic liganding strategies using, for example, We also tested the effects of both oxygen and the halogen thiols do not result in n-type behaviour because organic li- ions on film doping. We exposed the n-type film to oxygen gands are sterically large and cannot fully protect the Pb-rich which turned the film p-type after 10 minutes, confirming the nanoparticle surfaces from oxidation. We instead sought to role of oxygen as a strong p-type dopant. We also varied the use atomic ligands such as I- that are small enough to protect halogen salt type during the solid-state treatment, using tetra- the CQD surfaces from oxidative attack and act as substitu- butylammonium bromide and tetrabutylammonium chloride tional n-type dopants. as alternatives to TBAI. The iodide-passivated film had the

8 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Quantum Depleted Junction (QJ) Heterojunction (DH) Ag npN p AZO

n-CQD E Ec Ec F p-CQD E V ITO (a) Glass

0.5 Absorprion (a.u.) 60 0.0 (V) 600 900 1,2001,5001,8002,100 OC Wavelength (nm) V 0.4 40 Normalized EQE (%) 20 0.3

0 0.2 400 600 800 1,000 1,200 1,400 1,600 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Wavelength (nm) Bandgap (eV) (d) (e)

Figure 3 (a) Spatial band diagram for the quantum junction architecture in which size-effect tuning on each side of the junction provides an inherent match in band alignments between n-type and p-type CQDs. (b) Spatial band diagram for the depleted heterojunction solar cell in which stoichiometric tuning of the electron acceptor is required to achieve the desired band offset for device operation. (c) Diagram and cross-sectional SEM image of a quantum junction device. (d) EQE spectra of top and bottom illuminated quantum junction device indicating the presence of a junction near the p-side and loss of EQE if illumination is done on the n-side. (e) Linear dependence of the open circuit voltage on the bandgaps of the CQDs employed in the quantum junction architecture. (a)–(b), (d)–(e) Reprinted with permission from Reference 13. Copyright 2012 American Chemical Society. (c) Reprinted with permission from Reference 14.

lowest doping density and highest carrier mobility, while the a wide range of solar-relevant bandgaps. The development of chlorine-passivated film had the highest doping density and n-type CQD films enabled the realization of such a device. Our lowest carrier mobility, offering a doping magnitude tuning structure [13] was built on a transparent conductive indium range of 1016 to 1018 cm–3. tin oxide electrode on a glass substrate which formed an ohmic contact to a heavily p-type CQD bottom layer. The p-type IV. Quantum Junction Solar Cells layer employed tetramethylammonium hydroxide solid-state Control over the doping type and magnitude in CQD films treatment in air. The n-type layer used a TBAI treatment in an opens up possibilities for the construction of new device ar- inert nitrogen environment. The shallow-work-function alu- chitectures. We sought to make a p-n homojunction device minum top contact collected electrons from the n-type layer. formed from n-type and p-type CQD films. Commonly em- A device schematic and cross-sectional SEM image are shown

ployed CQD heterojunction solar cells using TiO2 or ZnO in Figure 3c. as the electron acceptor necessitate rigorous control over the The QJSC exhibited a certified power conversion efficiency band edges of both the n-type and p-type material in order to of 5.4% under AM1.5 solar illumination. We performed a se- achieve high performance, illustrated in Figure 3b. The limi- ries of tests to prove that the device operated based on the p-n tations on the usable band edge energies obviate one of the junction principle. The devices lost rectification and had ef- main benefits of CQD photovoltaic materials, namely quan- ficiency below 0.1% when we removed either the p-type or the tum size tuning. n-type CQD layer. The turn-on voltage was impacted in a pre- A quantum junction solar cell (QJSC), composed entirely of dictable way if we tuned the CQD film bandgap in either the CQDs, could achieve optimal current, voltage, and power across n-type or p-type layer.” Measurements of the external quantum

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 9 efficiency (EQE) for illumination from both the p-side and n- of other electronic and optical devices, including bipolar junc- side of the device showed loss of EQE if illumination was done tion transistors, thyristors, and graded-doping devices. on the n-side, indicating the existence of a junction near the thinner p-side (Figure 3d). V. Tandem Colloidal Additionally, a solution-phase TBAI treatment for the Quantum Dot Solar Cells CQDs in the n-type layer was found to increase the power The capacity to tune the bandgap of CQDs through the quan- conversion efficiency in the QJSC to 6.6% [14]. The solution- tum size effect allows multijunction cells to be realized in prin- phase treatment was able to overcome steric hindrance of the ciple and raises the ultimate limit on solar cell performance long TBAI ligands in the solid state treatment. The films made from 31% for single junction cells to 42% for tandem cells and from the solution-treated CQDs displayed increased electron 49% for triple junction cells [15]. In series-connected current- mobilities of 0.24 cm2 V–1 s–1 and low midgap trap state densi- matched tandem cells, holes from the front cell and electrons ties as measured by transient photovoltage spectroscopy. from the back cell must recombine efficiently in intervening We featured the versatility of the QJSC architecture by layers. This is typically achieved in epitaxial compound semi- making families of devices with CQD films having bandgaps conductor devices through the use of tunnel junctions that of 1.6, 1.3, 1.0, 0.8, and 0.6 eV. These devices spanned the achieve sequential combination of thin transparent p++ fol- solar spectrum with absorption cutoffs from 770 to 2060 nm. lowed by n++ doped layers [16]. CQD compatible layers of As predicted by theory, there was a linear relationship between this type are not currently available, so we needed to develop a open-circuit voltage and bandgap (Figure 3e), and the devices replacement for this concept in order to demonstrate a tandem displayed twice the current and fill factor of depleted hetero- CQD cell. junction solar cells made using the same set of non-optimally Our tunnel junction replacement is termed a graded recom- band-aligned CQD films. The same ingredients of size-tun- bination layer (GRL), and solves the efficient recombination ability and doping control could be used to build a wide range problem by using a progression of work function materials

Au/Ag Energy (eV) 1.6 eV E C PbS 1 eV PbS 1eV PbS CQD 0 GRL EF TiO2 1.6 eV PbS CQD –1 TiO2 MoO3 TiO2 –2 ITO –3 E Glass v ITO AZO (a) (b) 20 80

) 70 –2 15 60 50 10 40

EQE (%) 30 5 20

Current Density (mA cm 10 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 400 600 800 1,000 1,200 1,400 Voltage (V) Wavelength (nm) (c) (d)

Figure 4 (a) Device architecture for a tandem CQD solar cell with quantum confined bandgaps of 1.6 eV and 1.0 eV. (b) Spatial band diagram for a CQD tandem cell at equilibrium. (c) Current-voltage characteristics under AM1.5 simulated illumination for the large bandgap cell (blue), small bandgap cell (black), small bandgap cell when the large bandgap film is used as a filter (red), and tandem cell (green). (d) External quantum efficiency spectra for the large bandgap cell with a transparent top contact (blue), the small bandgap cell with a reflective top contact (black), and the small bandgap cell when the large bandgap film is used as a filter (red). (a)-(d) Reprinted with permission from Reference 17.

10 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 from the front to the back cell [17]. We used a series of room- ticing properties of CQD films for large-area, low-cost, solu- temperature sputtered n-type transparent oxides to realize the tion-processable photovoltaics that overcome the Shockley-

layer. The GRL is composed of deep-work-function MoO3 Quiesser limit. followed by intermediate indium tin oxide (ITO) followed by shallow-work-function but still heavily doped aluminum- VII. Acknowledgements doped zinc oxide (AZO) which matches the work function of This publication is based, in part, on work supported by Award

the lightly doped TiO2 acceptor. KUS-11-009-21, made by King Abdullah University of Sci- A schematic of our tandem CQD cell layer structure is ence and Technology (KAUST), by the Ontario Research Fund shown in Figure 4a, and a spatial band diagram is shown in Research Excellence Program, and by the Natural Sciences and Figure 4b. We chose bandgaps of 1.6 eV and 1.0 eV for the vis- Engineering Research Council (NSERC) of Canada. ible (front) and infrared (back) CQD films, respectively, which were within 5% of optimal for current-matched tandem cells VIII. References

[15]. We measured short circuit current densities JSC of 8.7 [1] S. A. McDonald, G. Konstantatos, S. Zhang, P. W. Cyr, mA cm–2 and 8.9 mA cm–2 for the optimized visible cell with E. J. D. Klem, L. Levina, and E. H. Sargent, “Solu- a transparent top contact and the optimized infrared cell with tion-processed PbS quantum dot infrared photodetec- a reflective back contact illuminated through a visible cell, re- tors and photovoltaics.” Nat. Mater., vol. 4, no. 2, pp. spectively, confirming that we had achieved current matching 138–142, 2005. to within a few percent. [2] A. H. Ip, S. M. Thon, S. Hoogland, O. Voznyy, D. An ideal series-connected tandem cell should exhibit an Zhitomirsky, R. Debnath, L. Levina, L. R. Rollny, G.

open circuit voltage VOC equal to the sum of the constituent H. Carey, A. Fischer, K. W. Kemp, I. J. Kramer, Z. cell voltages. The visible and infrared cells exhibited open cir- Ning, A. J. Labelle, K. W. Chou, A. Amassian, and E. cuit voltages of 0.7 V and 0.36 V, respectively, and the tandem H. Sargent, “Hybrid passivated colloidal quantum dot

cell exhibited a VOC of 1.06 V. The overall power conversion solids.” Nat. Nanotechnol., vol. 7, no. 9, pp. 577–582, efficiency of the champion CQD tandem cell was 4.21% which 2012. was greater than either of the single junction efficiencies of [3] O. E. Semonin, J. M. Luther, S. Choi, H.-Y. Chen, J. Gao, 2.98% for the visible cell and 1.47% for the infrared cell. J-V A. J. Nozik, and M. C. Beard, “Peak external photocur- characteristics for the single cells and tandem cell are shown rent quantum efficiency exceeding 100% via MEG in a in Figure 4c, and EQE spectra for the single cells are shown quantum dot solar cell.” Science, vol. 334, no. 6062, pp. in Figure 4d. 1530–1533, Dec. 2011. As a control, we also built a CQD tandem device without [4] M. A. Hines and G. D. Scholes, “Colloidal PbS Nanocrys-

a GRL, in which ITO directly connected TiO2. It exhibited a tals with Size-Tunable Near-Infrared Emission: Observa- markedly lower VOC of 0.73 V and a weakened JSC compared tion of Post-Synthesis Self-Narrowing of the Particle Size to the GRL device, which we attributed to the establishment Distribution.” Adv. Mater., vol. 15, no. 21, pp. 1844– of an undesired barrier to electron transport between the TiO2 1849, 2003. and ITO. The development of the GRL made our proof-of- [5] M. Law, J. M. Luther, Q. Song, B. K. Hughes, C. L. Per- principle CQD tandem cell possible, and the same concept of kins, and A. J. Nozik, “Structural, optical, and electrical graded band position in soft materials could be extended to properties of PbSe nanocrystal solids treated thermally or build cells with three or more junctions, taking full advantage with simple amines.” J. Am. Chem. Soc., vol. 130, no. 18, of the bandgap tunability offered by CQD films to overcome pp. 5974–5985, May 2008. the Shockley-Quiesser limit. [6] D. A. R. Barkhouse, A. G. Pattantyus-Abraham, L. Levi- na, and E. H. Sargent, “Thiols passivate recombination VI. Conclusions and Future Directions centers in colloidal quantum dots leading to enhanced The field of CQD photovoltaics has progressed rapidly in re- photovoltaic device efficiency.” ACS Nano, vol. 2, no. 11, cent years. The rapid ascent in performance is due to advances pp. 2356–2362, Nov. 2008. in both material processing and properties, and also in novel [7] J. Tang, K. W. Kemp, S. Hoogland, K. S. Jeong, H. Liu, device engineering. We outlined some of the recent devel- L. Levina, M. Furukawa, X. Wang, R. Debnath, D. Cha, opments, including hybrid passivation for reduced midgap K. W. Chou, A. Fischer, A. Amassian, J. B. Asbury, and E. trap densities and record efficiencies, doping in CQD sol- H. Sargent, “Colloidal-quantum-dot photovoltaics using ids leading to the development of an n-type CQD film, the atomic-ligand passivation.” Nat. Mater., vol. 10, no. 10, demonstration of the quantum junction solar cell in which pp. 765–771, Sep. 2011. both sides of the junction are quantum-tuned, and a proof-of- [8] B. C. O’Regan, S. Scully, A. C. Mayer, E. Palomares, and

principle demonstration of a CQD tandem solar cell. Further J. Durrant, “The effect of Al2O3 barrier layers in TiO2/ advances in the field will be required to achieve commer- dye/CuSCN photovoltaic cells explored by recombination cially compelling efficiencies. Efforts are currently underway and DOS characterization using transient photovoltage to gain full control over CQD surface passivation in order to measurements.” J. Phys. Chem. B, vol. 109, no. 10, pp. further reduce the density and energetic depth of trap states, 4616–4623, Mar. 2005. as well as to significantly increase carrier transport lengths. [9] A. G. Pattantyus-Abraham, I. J. Kramer, A. R. Bark- These innovations will be needed to make full use of the en- house, X. Wang, G. Konstantatos, R. Debnath, L. Levina,

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 11 I. Raabe, M. K. Nazeeruddin, M. Grä tzel, and E. H. Sargent, junction solar cells.” Nano Lett., vol. 12, no. 9, pp. 4889– “Depleted-heterojunction colloidal quantum dot solar cells.” 4894, Sep. 2012. ACS Nano, vol. 4, no. 6, pp. 3374–3380, Jun. 2010. [14] Z. Ning, Y. Ren, S. Hoogland, O. Voznyy, L. Levina, [10] O. Voznyy, D. Zhitomirsky, P. Stadler, Z. Ning, S. P. Stadler, X. Lan, D. Zhitomirsky, and E. H. Sargent, Hoogland, and E. H. Sargent, “A charge-orbital balance “All-inorganic colloidal quantum dot photovoltaics em- picture of doping in colloidal quantum dot solids.” ACS ploying solution-phase halide passivation.” Adv. Mater., Nano, vol. 6, no. 9, pp. 8448–8455, Sep. 2012. vol. 24, no. 47, pp. 6295–6299, Dec. 2012. [11] G. Konstantatos, L. Levina, A. Fischer, and E. H. Sargent, [15] E. H. Sargent, “Infrared photovoltaics made by solution “Engineering the temporal response of photoconductive processing.” Nat. Photonics, vol. 3, no. 6, pp. 325–331, photodetectors via selective introduction of surface trap 2009. states.” Nano Lett., vol. 8, no. 5, pp. 1446–1450, May [16] M. Yamaguchi, T. Takamoto, K. Araki, and N. Ekins- 2008. Daukes, “Multi-junction III–V solar cells: current status [12] D. Zhitomirsky, M. Furukawa, J. Tang, P. Stadler, and future potential.” Sol. Energy, vol. 79, no. 1, pp. 78– S. Hoogland, O. Voznyy, H. Liu, and E. H. Sargent, 85, Jul. 2005. “N-type colloidal-quantum-dot solids for photovolta- [17] X. Wang, G. I. Koleilat, J. Tang, H. Liu, I. J. Kramer, R. ics.” Adv. Mater., vol. 24, no. 46, pp. 6181–6185, Dec. Debnath, L. Brzozowski, D. A. R. Barkhouse, L. Levina, S. 2012. Hoogland, and E. H. Sargent, “Tandem colloidal quantum [13] J. Tang, H. Liu, D. Zhitomirsky, S. Hoogland, X. Wang, dot solar cells employing a graded recombination layer.” M. Furukawa, L. Levina, and E. H. Sargent, “Quantum Nat. Photonics, vol. 5, no. 8, pp. 480–484, 2011.

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12 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013

News

Newly Elected Members to the Board of Governors 2013–2015

STEWART AITCHISON (M’96- (’03–’05) of the Scottish Chapter of IPS (formerly IEEE/ SM’00) is currently the Nortel Chair LEOS) and has served the society in several other capacities for Emerging Technologies at the including Aron Kressel Awards Committee (2008) and IPS University of Toronto. Joint Awards Committee (2012). He has been a member of He has been actively involved the IPS Optoelectronics Materials and Processing (now the with the photonics community for Photonic Materials Science and Technology) Sub-Committee ~25 years and has serviced on vari- from ’01–’08 and ’10–’12, co-organized the special sympo- ous technical committees including sium on ‘Flexible large area photonics’ at IPC 2011 and will CLEO, CLEO Europe, the IEEE Pho- be Program Chair for IPC 2013. He co-edited a special issue tonics Society Annual meeting and various technical meet- of IEEE J. Select. Top. Quantum Electron. in 2002. His further ings including the OSA nonlinear guided waves meeting service to IEEE includes membership of the Technical Com- which he chaired in 2004. In addition he has served on the mittee TC4 for Nano-optics, Nano-photonics and Nano-Op- OSA Dekker student award committee and the IEEE Pho- toelectronics. tonics Society distinguished lecturer selection committees. Dr. Dawson also serves/has served the Institute of As Vice Dean, Research, for the Faculty of Applied Science Physics (IOP-QEP Committee member ’00–’10), the and Engineering at the University of Toronto since 2007, Pro- Royal Society of Edinburgh (Member RSE/BP Fellow- fessor Aitchison provides strategic leadership to advance the ships Committee ’09–‘12), the Royal Society of London Faculty’s research mission as one of the world’s leading engi- (International Travel Grants Committee, ’09–‘15), the neering schools. He oversees the Faculty’s research enterprise, EPS (Europhoton), and SPIE (Photonics West), amongst fosters synergy between research, education and practice, de- others. He was a co-organizer of the RS/RAEng 2010 velops multi-disciplinary collaborations, and facilitates part- celebration meeting for the 50th anniversary of the laser nerships between faculty members, industry, research organi- (London), and proposed and is co-organizing the IOP’s zations, federal and provincial governments and international 2012 celebration meeting for the 50th anniversary of the institutions. He also leads a research group of 15 graduate diode laser (Warwick). students and postdoctoral researchers who work on optical in- Martin Dawson received the BSc degree in Physics in tegration, nonlinear guided wave devices, and optical biosen- 1981 and the PhD in Laser Physics in 1985 from Imperial sors. Professor Aitchison is a Fellow of the Optical Society of College London. His PhD work concerned mode-locked America, a Fellow of the Institute of Physics London, a Fellow dye and solid state lasers, optically-pumped semiconduc- of the American Association for the Advancement of Science tor lasers and phase conjugation. He spent the years 1985– and a Fellow of the Royal Society of Canada. In 1996 he was 1991 in the United States (at North Texas State University the holder of a Royal Society of Edinburgh Personal Fellow- and University of Iowa), where he developed femtosecond ship and carried out research on spatial solitons as a visiting synchronously pumped dye lasers in a format that was researcher at CREOL, University of Central Florida. Since adopted widely and subsequently commercialized. From 2001 he has held the Nortel chair in Emerging Technology, 1991–1996 he was at Sharp Laboratories of Europe Ltd., in the Department of Electrical and Computer Engineering at where he performed fundamental work on AlInGaP/GaAs the University of Toronto. He received a B.Sc. (with first class semiconductors and developed red-emitting RCLEDs. honors) and a Ph.D. from the Physics Department, Heriot- He joined the Institute of Photonics at the University of Watt University, Edinburgh, U.K., in 1984 and 1987 respec- Strathclyde as a founder member in 1996, where he is Pro- tively. His dissertation research was on optical bistability in fessor, Director of Research and leader of semiconductor semiconductor waveguides. optoelectronics. He is widely recognized for his work on vertical external cavity surface emitting semiconductor la- MARTIN D. DAWSON (M’86- sers (VECSELs) and micro-structured gallium nitride de- SM’98-F’09) is Professor and Di- vice technology; his broader interests extend to diamond rector of Research in the Institute photonics and hybrid organic/inorganic optoelectronics. of Photonics at the University of He is a founder of mLED Ltd., holds fellowships of OSA, Strathclyde in Glasgow, UK. He was IEEE, Institute of Physics and the Royal Society of Edin- Secretary (’97–’98), Vice-Chair (’98– burgh, and has published over 500 referred journal and ’00), Chair (’00–’03) and Past Chair conference papers.

14 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 News (cont’d)

MASATAKA NAKAZAWA (M’84- Berkeley Sensor and Actuator Center SM’92-F’95) is a Distinguished (BSAC), and Faculty Director of Mar- Professor and the Director of the vell Nanolab. He is actively involved Research Institute of Electrical in a wide range of activities in the Communication (RIEC) at Tohoku photonics community. He has served University, Japan. He was an as- as Member of the IEEE David Sarnoff sociate editor of Photonics Technology Award Committee from 2010-2011, Letters (2001–2005), a topical editor and as Chair from 2012-2013. He was for OSA Optics Letters (2001–2005), the founding Co-Chair of IEEE LEOS an editorial board member of Optics Communications (Elsevier Summer Topical Meeting on Optical MEMS in 1996. The Science, 1998–2006), and is an honorary editor of Optical meeting has evolved into International Conference on Optical Fiber Technology (Academic Press, 2001–present). He has MEMS and Nanophotonics sponsored by IEEE Photonics So- served as the IEEE Quantum Electronics Award Commit- ciety. It is held annually and rotates among Asia, Europe, and tee chair (2011) and an IEEE William Streifer Achievement North America. In addition to General Co-Chair and Program Award Committee member (1996). He has also served on Committee Chair, he has also chaired the International Steer- various committees in CLEO, CLEO/Pacific Rim, OFC, ing Committee from 1998 to 2006. He has also served in the ECOC, OA&A, NLGW, OEC, and QELS since 1991. He program committees of many technical conferences, including has served on the OSA Board of Directors (2008–2010) and CLEO, OFC, Photonics Society Annual Meeting, Microwave as an International Council Member (2004–2006). He has Photonics (MWP) conferences, IEEE MEMS conferences, Inter- been the President of the Electronics Society (2008) and the national Electronic Device Meeting (IEDM), DRC, and ISSCC. Managing Director of General Affairs (2011) for the Insti- He also served as Guest Editors of special issues on Optical tute of Electronics, Information and Communication Engi- MEMS in IEEE Journal of Lightwave Technology and Journal of Se- neers (IEICE), Japan. lected Topics in Quantum Electronics. Masataka Nakazawa received a B.S. degree from Ming C. Wu received the BS degree from National Taiwan Kanazawa University in 1975, and M.S. and Ph.D. degrees University and the MS and PhD degrees from UC Berkeley in from the Tokyo Institute of Technology in 1977 and 1980, 1983, 1986, and 1988, respectively, all in Electrical Engineering. respectively. In 1980, he joined the Ibaraki Electrical Com- He joined AT&T Bell Laboratories at Murray Hill, New Jersey in munication Laboratory of Nippon Telegraph & Telephone 1988, where he was a Member of Technical Staff working on high Public Corporation. He was then a visiting scientist at MIT speed optoelectronic devices. He is a co-inventor of monolithic from 1984 to 1985. He became the first Distinguished colliding pulse mode-locked laser, which has led to the genera- Technical Member of NTT Laboratories in 1994 and the tion of femtosecond optical pulses at hundreds of GHz repetition first NTT R&D Fellow in 1999. He became a professor frequency. In 1992, he joined the faculty of the University of Cali- of the RIEC at Tohoku University in 2001. His current fornia, Los Angeles (UCLA). He broadened his research to the in- interests are ultra multi-level coherent transmission, high- terdisciplinary area of Optical MEMS (micro-electro-mechanical speed OTDM transmission, short pulse lasers, optical fi- systems). He pioneers the development of reconfigurable free- ber amplifiers, and optical metrology. He is perhaps best space integrated optics. Three-dimensional micro-optical ele- known for his 1989 invention of the 1.48 mu m InGaAsP ments are monolithically integrated with actuators using MEMS laser diode pumped, commercially available compact erbi- fabrication technologies. In 1997, he co-founded OMM to com- um-doped fiber amplifier (EDFA). He has published 420 mercialize MEMS-based optical switches. In 2004, he moved to papers, spoken at 260 international conferences, and holds University of California, Berkeley, where he is currently Nortel more than 100 patents. He has received many awards in- Distinguished Professor. He co-invented a new optical manipula- cluding the IEEE Quantum Electronics Award in 2010, tion technique called optoelectronic tweezers (OET) that allows the Thomson Scientific Laureate in 2006, the OSA R. W. trapping of micro and nanoscale objects, including cells, using Wood prize in 2005, the IEEE D. E. Noble Award in 2002, projected incoherent light patterns with five orders of magnitude and the IEE Electronics Letters Premium Award in 1991. lower intensity than traditional laser tweezers. At Berkeley, he also He also received the Purple Ribbon Medal from the Em- works on optical antenna and metal optics-based nano-optoelec- peror in 2010, and the Prime Minister’s Award in 2009. tronic devices. The nanopatch semiconductor laser he developed is Dr. Nakazawa is a Fellow of the IEEE, OSA, IEICE, and among the smallest reported in the infrared regime (physical vol- JSAP (The Japan Society of Applied Physics). ume is only 2% of a cubic wavelength). He has published over 200 journal papers and 400 conference papers, and holds 22 US pat- MING C. WU (S’83-M’88-SM’00-F’02) is Nortel Distin- ents. He is a Fellow of IEEE, a Parkard Foundation Fellow (1992– guished Professor of Electrical Engineering and Computer Sci- 1997), and the recipient of the 2007 Paul F. Forman Engineering ences at the University of California, Berkeley, Co-Director of Excellence Award from Optical Society of America.

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 15 News

Tingye Li—The High-Tech “Diplomat” bridging the West and the East—passed away on 27 December 2012, aged 81 Kwok-Wai Cheung Professor, Department of Information Engineering The Chinese University of Hong Kong

The world would sorely miss Tingye Li at this age of glob- In addition to his scientific achievements, he also con- al turmoil. His high-tech diplomacy could bring peace tributed to world peace by bringing knowledge, friendship, and prosperity to the world better than ammunition sales mutual understanding and respect to bridge the post-war and trade embargoes. chasm between the West and the East. Tingye was ethnic Probably everyone in the photonics community knows Chinese and a patriotic American. He identified with his that Tingye was a great scientist and engineer at Bell Labs national and cultural heritage and core values. During his who made fundamental contributions in laser and light- frequent visits to China, as many as four to five times a year, wave communications. His outstanding achievements and he encountered many senior government officials, academ- the long list of honors and awards are well-known. To his ics, and executives. He could point out the issues in ways friends and protégés, we appreciate Tingye even more for the Chinese people would appreciate, and in a constructive his enthusiasm in life, adherence to principles, perseverance manner. He articulated the modern world view and helped in struggles, sensitivity to people, words of encouragement, transform the perception of the West’s imperialist past. mutual respect and love. He touched our lives and left his During the critical formation stage in the modernization passion in all our hearts. of China, he introduced many experts to give advice on the Born in a diplomat’s family, Tingye inherited superb development of communication infrastructure and tech- insight on people and verbal persuasiveness in his genes. nology industries, helped organized many conferences and Through his understanding of the subtleties of human re- networked with the local researchers. For these reasons, he lationship and the proper ways of handling, he nurtured was honored as one of the first foreign members of the Chi- and inspired several generations of younger researchers. nese Academy of Engineering and Academia Sinica, and The author is one of the many who benefited tremendous- honorary professors and doctorates of over ten universities. ly from Tingye’s mentorship. He was a lot of fun to work In research for future technology, he took a pragmatic with because he had the wits and could always find the view that technology must serve a useful purpose and be punch line to cheer people up even under the most desper- deployable. While he encouraged forward looking re- ate circumstances. search, he frequently brought researchers back to ground with down-to-earth challenges. Tingye was very passionate about skiing. He liked to invite friends to join him and on a few occasions he

Tingye Li (center), Edith Li (Tingye’s wife on left), Liz Ro- gan (OSA CEO on right) and Kwok-wai Cheung (standing). The photo was taken at the banquet dinner of the Asia Communications and Photonics Conference, Dec. 2010, in ACP 2010 Tingye (center) with Steering Committee Shanghai, Pudong. members.

16 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 News (cont’d)

Tingye Li (sitting) at the Chair’s reception in ACP 2009 (Shanghai, November 2009) taken with friends in the Tingye Li giving a seminar in 1994 (Hong Kong). photonics community.

had invited me to join. I wish I had if it were not for the Tingye had contributed so much to the research commu- 20,000-km distance but to him it would be a no-brainer. nity, education sector and technology industry that it is im- While it is hard to believe that a person as healthy and possible to enumerate. He had a fulfilling life, a wonderful energetic as Tingye would suffer from the fatal heart at- wife Edith and daughters Deborah and Kathryn, and he had tack on the family ski trip at Snowbird, Utah on 27th De- no regrets. He will be fondly remembered as a paternal leader cember 2012, I guess if he had a choice, he would choose by all his friends and the community he helped shaped. His it that way. impact will be everlasting.

Call For Fellow Nominations

Nominations are being accepted for the IEEE Fellows class tion Kit, lists of Fellows who may be available as refer- of 2014. The rank of IEEE Fellow is the institute’s high- ences as well as the history of the IEEE Fellows program. est member grade, bestowed on IEEE senior members who Please visit the Fellows website at < http://www.ieee. have contributed “to the advancement or application of en- org/fellows>. gineering, science and technology.” The deadline for nomi- The online Fellow Nomination Process must and can nations is 1 March 2013. only begin with a nominator. Strict adherence to the Fellow Senior members can be nominated in one of four cat- nomination instructions is essential; otherwise, a nominee egories: application engineer/practitioner, research engi- may be placed at a serious disadvantage and possibly even neer/scientist, educator or technical leader. The Fellows disqualified from consideration. Web site contains additional information on the nomi- Begin the Online Fellow Nomination Process (EFNP) nation process including access to the Fellows Nomina- http://elektra.ieee.org/fellows/fellowno.nsf

Call for Nominations

IEEE Photonics Society 2013 ence formerly known as the IEEE Photonics Society An- Distinguished Service Award nual Meeting. The Distinguished Service Award was established to Nominations for the Distinguished Service Award are recognize an exceptional individual contribution of ser- now being solicited for submission to the Photonics Society vice that has had significant benefit to the membership Executive Office. The deadline for nominations is April 30. of the IEEE Photonics Society as a whole. This level of The nomination form, award information and a list of service will often include serving the Society in several previous recipients are available on the Photonics Society capacities or in positions of significant responsibility. web site: Candidates should be members of the Photonics Society. http://www.photonicssociety.org/award-info The award is presented at the IEEE Photonics Confer- http://www.photonicssociety.org/award-winners

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 17 News (cont’d)

IPS 2013 JAC Awards Call for Nominations

IEEE Photonics Society 2013 Awards CALL FOR NOMINATIONS Nomination deadline: 5 APRIL 2013

The IPS Joint Awards Committee urges you to nominate a colleague for the following awards: Aron Kressel Award Engineering Achievement Award Quantum Electronics Award William Streifer Scientific Achievement Award Nomination forms and a list of previous recipients can be found on our website: www.photonicssociety.org. Nomination Form: http://photonicssociety.org/sites/default/files/Nom%20Form%20-%20AK%20EA%20QE%20WSSA%201.12.pdf Previous Winners: http://photonicssociety.org/award-info

Nominations for IEEE Medals and Recognitions

The IEEE Awards Program provides peer recognition to IEEE Medal for Innovations in Healthcare Technol- technical professionals whose exceptional achievements ogy, for outstanding contributions and/or innovations in and outstanding contributions have made a lasting impact engineering within the fields of medicine, biology and on technology, society, and the engineering profession. healthcare technology. The IEEE Photonics Society members may be particularly interested in the following IEEE Medals and Rec- IEEE Edison Medal, for a career of meritorious achieve- ognitions, whose nomination deadlines are 1 July 2013. ment in electrical science, electrical engineering or the The awards typically consist of a medal, certificate and electrical arts. honorarium and are presented at the distinguished IEEE Honors Ceremony. IEEE Jack S. Kilby Signal Processing Medal, for outstanding achievements in signal processing. IEEE Medal of Honor, for an exceptional contribution or an extraordinary career in the IEEE fields of interest. IEEE Recognitions • IEEE Service Awards IEEE Founders Medal, for outstanding contributions in • IEEE Corporate Recognition Awards the leadership, planning, and administration of affairs of • IEEE Honorary Membership great value to the electrical and electronics engineering • IEEE Prize Paper Awards profession. Awards presented by the IEEE Board of Directors fall into several categories: The Medal of Honor, Medals, IEEE James H. Mulligan, Jr. Education Medal, for a ca- Technical Field Awards, Corporate Recognitions, Service reer of outstanding contributions to education in the fields Awards, and Prize Papers. The IEEE also recognizes out- of interest of IEEE. standing individuals through a special membership cat- egory: IEEE Honorary Member. IEEE Jun-ichi Nishizawa Medal, for outstanding con- Nominations are initiated by members and the public, tributions to material and device science and technology, and then reviewed by a panel of peers. Their recommenda- including practical application. tions are submitted to the IEEE Awards Board prior to final approval by the IEEE Board of Directors. IEEE/RSE (Royal Society of Edinburgh) Wolfson For nomination guidelines and forms, visit http:// James Clerk Maxwell Award, for groundbreaking con- www.ieee.org/awards. Questions? Contact IEEE Awards tributions that have had an exceptional impact on the Activities, 445 Hoes Lane, Piscataway, NJ 08854 USA; development of electronics and electrical engineering or tel.: +1 732 562 3844; fax: +1 732 981 9019; e-mail: related fields. [email protected].

18 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 News (cont’d)

Complete List of IEEE Medals IEEE Medal in Power Engineering, for outstanding con- and Recognitions tributions to the technology associated with the genera- IEEE Medal of Honor, for an exceptional contribution or tion, transmission, distribution, application and utilization an extraordinary career in the IEEE fields of interest. of electric power for the betterment of society.

IEEE Alexander Graham Bell Medal, for exceptional IEEE Simon Ramo Medal, for exceptional achievement in contributions to the advancement of communications sci- systems engineering and systems science. ences and engineering. IEEE John von Neumann Medal, for outstanding IEEE Edison Medal, for a career of meritorious achieve- achievements in computer-related science and technology. ment in electrical science, electrical engineering or the electrical arts. IEEE Honorary Membership, awarded by the IEEE Board of Directors to individuals who have rendered meritorious IEEE Medal for Environmental and Safety Technolo- service to humanity in the technical fields of interest of the gies, for outstanding accomplishments in the application IEEE and who are not members of IEEE. of technology in the fields of interest of IEEE that improve the environment and/or public safety. IEEE Service Awards IEEE Haraden Pratt Award, for outstanding service to IEEE Founders Medal, for outstanding contributions in the IEEE and presented to IEEE members. leadership, planning, and administration of affairs of great value to the electrical and electronics engineering profession. IEEE Richard M. Emberson Award, for distinguished service to the development, viability, advancement and pursuit of the IEEE Richard W. Hamming Medal, for exceptional contri- technical objectives of the IEEE, and given to IEEE members. butions to information sciences, systems and technology. IEEE Corporate Recognitions IEEE Medal for Innovations in Healthcare Technol- IEEE Corporate Innovation Award, for an outstanding ogy, for outstanding contributions and/or innovations in and exemplary innovation by an industrial entity, govern- engineering within the fields of medicine, biology and mental or academic organization, or other corporate body, healthcare technology. within the fields of interest to the IEEE. IEEE Jack S. Kilby Signal Processing Medal, for outstanding achievements in signal processing. IEEE Ernst Weber Managerial Leadership Award, for exceptional managerial leadership in the fields of interest IEEE/RSE (Royal Society of Edinburgh) Wolfson James of the IEEE. Clerk Maxwell Award, for groundbreaking contributions that have had an exceptional impact on the development of IEEE Prize Paper/Scholarship Awards electronics and electrical engineering or related fields. IEEE W.R.G. Baker Award, for the most outstanding paper reporting original work published in an IEEE archival IEEE James H. Mulligan, Jr. Education Medal, for a ca- publications. reer of outstanding contributions to education in the fields of interest of IEEE. IEEE Donald G. Fink Award, for the outstanding survey, review, or tutorial paper in any of the IEEE transactions, IEEE Jun-ichi Nishizawa Medal, for outstanding con- journals, magazines or proceedings. tributions to material and device science and technology, including practical application. IEEE Life Members Graduate Study Fellowship, awarded to a first year, full-time graduate student for work in the IEEE Robert N. Noyce Medal, for exceptional contribu- area of electrical engineering, at an engineering school/pro- tions to the microelectronics industry. gram of recognized standing worldwide.

IEEE Dennis J. Picard Medal for Radar Technolo- The Charles LeGeyt Fortescue Graduate Scholar- gies and Applications, for outstanding accomplish- ship, awarded to a beginning graduate student every ments in advancing the fields of radar technologies and year for one year of full time graduate work in electrical their applications. engineering.

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 19 IEEE PHOTONICS Technology

LettersNew issue WhyWhy PublishPublish in IEEE PTL? published every 2 weeks UÊÊ,i«ÕÌ>ÌÊvÀÊiÝViiViÊ>`ÊÌiiÃÃ sss UÊÊ«>VÌÊv>VÌÀÊÓ°Ó Rapid online UÊÊÕÌ ÀvÀi`ÞÊ«ÀViÃÃ posting within UÊÊ >ÃÞÌÕÃiÊÃiVÕÀiÊiÊÃÕLÃÃÊÃÌi two weeks of UÊÊ} µÕ>ÌÞÊ«iiÀÊÀiÛiÜ acceptance UÊÊ ÝViiÌÊÃÕ««ÀÌÊ«ÀÛì`ÊLÞÊì`V>Ìi`Ê ÊÃÌ>vv UÊÊ Ý«>ì`ÊVviÀiViÊ«>«iÀÊÃÕLÃÃÃÊÜiVi IEEEIEEE PTLPTL welcomeswweellccomomese original advances related to Easy-to-Use Authors’ Tools state-of-the-art capabilities in UÊÊ,iviÀiViÊ6>`>Ì the theory, design, fabrication, UÊÊÀ>« VÃÊ iViÀ application, performance, packaging and reliability of: Plus: s,ASERSANDOPTICALDEVICES s&IBER CABLEAND UÊÊ, ÊvÀÊ>ÕÌ ÀÃp Ê>`>ÌÀÞÊ«ÕLV>ÌÊviiÃt WAVELENGTHTECHNOLOGIES UÊÊ, Ê«ÃÌ}ÊvÊÕÌi`>ÊÃÊEÊVÀÊ>}iÃ s3YSTEMS SUBSYSTEMS AND NEWAPPLICATIONSOF ® UÊÊ*ÃÌi`ÊEÊ>ÀV Ûi`ÊÊ Xplore QUANTUMELECTRONICDEVICES

About IEEE Xplore®: s/NEOFTHEMOSTWIDELYUSEDENGINEERING RESOURCESINTHEWORLD Contact us: s$ELIVERSOVERMILLIONARTICLESANDPAPERS [email protected] WORLDWIDE http://mc.manuscriptcentral.com/ptl-ieee Careers and Awards

Nomination deadlines for the IEEE Photonics Society Awards are listed as follows:

Award Nomination deadline Distinguished Lecturer Awards 16 February

Aron Kressel Award 5 April Engineering Achievement Award 5 April Quantum Electronics Award 5 April William Streifer Scientific Achievement Award 5 April

Distinguished Service Award 30 April

Graduate Student Fellowship 30 May

John Tyndall Award 10 August

Young Investigator Award 30 September

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 21 Careers and Awards (cont’d)

James Coleman Wins 2013 John Tyndall Award University of Illinois professor and IEEE Photonics Society Past-President receives award for contributions to optics and photonics industry

Nov. 27, 2012—The IEEE Photonics Society “Jim is considered a pioneer for his work and the Optical Society (OSA) are pleased to in photonics and semiconductor lasers,” said announce that James Coleman, Intel Alumni OSA CEO Elizabeth Rogan. “His research Endowed Chair in Electrical and Computer on strained-layer pump lasers, a critical Engineering at the University of Illinois, is component of all fiber optic telecommuni- the recipient of the 2013 John Tyndall Award. cations systems, has facilitated important Coleman, also a professor of materials sci- scientific advances for the global optics ence and engineering, is being recognized for community.” “contributions to semiconductor lasers and The Tyndall Award is the highest recog- photonic materials, processing and device nition in optical communications and is co- designs, including high reliability strained- sponsored by OSA and the IEEE Photonics layer lasers.” Society. First presented in 1987, the Tyndall Award rec- The Tyndall Award recognizes Coleman’s research on ognizes an individual who has made pioneering, highly the development of III-V semiconductor lasers and pho- significant, or continuing technical or leadership contribu- tonic devices grown by metalorganic chemical vapor depo- tions to fiber optic technology. Corning, Inc. endows the sition (MOCVD), a growth method widely used to make award, a glass sculpture that represents the concept of total semiconductor devices. At the University of Illinois he and internal reflection. The award is named for the 19th cen- his students study quantum dots, quantum well hetero- tury scientist who was the first to demonstrate the phe- structures, and low threshold and high-power single mode nomenon of internal reflection. index guided lasers and arrays. “Jim’s breakthrough research demonstrated the reli- About IEEE Photonics Society ability of strained-layer lasers in conditions previously The IEEE Photonics Society is the photonics branch of the thought impossible,” said IEEE Photonics Society Ex- world’s largest professional science and engineering society. ecutive Director Rich Linke. “We commend him for his We are dedicated to promoting the photonics profession academic and patent contributions to the field of pho- through the publication of the highest-impact journals tonics and look forward to celebrating his achievements in the field, the sponsorship of hundreds of high quality with the global optical communications community at conferences around the world and the recognition of out- OFC/NFOEC.” standing contributions in the field. Our activities span the Coleman earned his doctoral degree in electrical en- full scope of science, technology and applications in the gineering from the University of Illinois. After working photonics field. For more information please visit: www. for AT&T Bell Laboratories and Rockwell International, PhotonicsSociety.org. Coleman returned to Illinois to join the faculty. He is a past president of the IEEE Photonics Society and has About OSA served as associate editor of IEEE Photonics Technology Uniting more than 180,000 professionals from 175 coun- Letters. He is a fellow of the IEEE, OSA, the American tries, the Optical Society (OSA) brings together the global Physical Society, and the American Association for the optics community through its programs and initiatives. Advancement of Science and was recently elected to Since 1916 OSA has worked to advance the common in- membership in the National Academy of Engineering. terests of the field, providing educational resources to the He has published more than 400 papers and holds eight scientists, engineers and business leaders who work in the patents. field by promoting the science of light and the advanced Coleman will be presented the award during the plenary technologies made possible by optics and photonics. OSA session of the 2013 Optical Fiber Communication Confer- publications, events, technical groups and programs foster ence and Exposition/National Fiber Optic Engineers Con- optics knowledge and scientific collaboration among all ference (OFC/NFOEC) taking place at the Anaheim Con- those with an interest in optics and photonics. For more vention Center March 17–21. information, visit www.osa.org.

22 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Careers and Awards (cont’d)

businesses, and component manufacturers, with research- About OFC/NFOEC ers, engineers, and development teams from around the For more than 35 years, the Optical Fiber Communica- world. OFC/NFOEC includes dynamic business pro- tion Conference and Exposition/National Fiber Optic En- gramming, an exposition of more than 550 companies, gineers Conference (OFC/NFOEC) has been the premier and cutting-edge peer-reviewed research that, combined, destination for converging breakthrough research and showcase the trends and pulse of the entire optical com- innovation in telecommunications, optical networking, munications industry. fiber optics and, recently, datacom and computing. Con- OFC/NFOEC is managed by the Optical Society sistently ranked in the top 200 tradeshows in the Unit- (OSA) and co-sponsored by OSA, the Institute of Elec- ed States, and named one of the Fastest Growing Trade trical and Electronics Engineers/Communications Society Shows in 2012 by TSNN, OFC/NFOEC unites service (IEEE/ComSoc), and the IEEE Photonics Society. Visit providers, systems companies, enterprise customers, IT www. ofcnfoec.org.

The Clemson University Department of Materials Science and Engineering, in conjunction with the Center for Optical Materials Science and Engineering Technologies (COMSET), is soliciting applications and nominations of Full or Associate Professors for the Sirrine Endowed Chair in Optical Fibers. Supported by an endowment in excess of $7.3M, the Sirrine Chair will be a pre-eminent scholar with an international reputation for research relating to optical fiber materials, advanced structures and applications. The endowment resulted from funding by the J. E. Sirrine Textile Foundation and the South Carolina Research Centers of Economic Excellence Act, both of which stipulated that the chaired professor encourage knowledge-based economic development and academic excellence. The Sirrine Chair will be a dynamic, innovative leader with a distinguished record of accomplishment of scholarship. The Chair will have an earned doctor- ate in materials science or related discipline and have 10-plus years of relevant industrial and/or academic experience. The candidate will have strong ties to professional societies and be active on national and international committees relating to research, education, or professional development in optics and materials. In addition to being a proven leader and mentor, the Sirrine Chair will have extensive industrial and governmental contacts, a solid history of international, interdisciplinary research, support and outreach activities, and a proven innovation record as evidenced by patents and licensed/commercialized technologies. Ideally, the candidate will be entrepreneurially minded having either created or consulted with new firms or have quantifiably contributed to business development or technology entrepreneurship. As a faculty member within the School of Materials Science and Engineering with additional affiliations within the University where warranted, the candidate will assume responsibilities associated with his/her academic appointment, including development and teaching of undergraduate and graduate courses, establishment of a strong and sustained research program, and demonstration of service to the University. Applicants should submit a cover letter, their resume, curriculum vitae, and a list of five references. Electronic submission required and should be sent to Dr. John Ballato, Search and Screen Committee Chair, at: [email protected]. Informal inquiries may also be directed to this e-mail address. Application materials should be received by March 1, 2013 to receive full consideration; however the search will remain open until the position is filled. Clemson University is an AA/EEO employer and does not discriminate against any person or group on the basis of age, color, disability, gender, national origin, race, religion, sexual orientation or veteran status.

SCHOOL OF MATERIALS SCIENCE & ENGINEERING College of Engineering & Science 161 Sirrine Hall Box 340971 Clemson, SC 29634-0971 864.656.3176 FAX 864.656.5973

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 23 Careers and Awards (cont’d)

IEEE Photonics Society 2013 Fellows

Congratulations! for contributions to high-speed and precise lightwave modula- Please join us in congratulating the 16 Photonics Society tion technologies members who were elevated to the grade of IEEE Fellow, Kazuro Kikuchi, The University of Tokyo class of 2013. This is a significant honor that is based on for contributions to coherent optical communication systems major technical contributions, leadership, and service to Luke Lester, University of New Mexico the Institute and the profession. for contributions to quantum dot lasers Stephen Alexander, Ciena Corporation Juerg Leuthold, Karlsruhe Institute of Technology (KIT) for contributions to optical communication technologies, systems, for contributions to high-speed optical communications and architectures Guifang Li, CREOL, University of Central Florida Gaetano Assanto, University “Roma Tre” for contributions to all-optical signal processing and for contributions to nonlinear optical guides and spatial solitons high-capacity fiber-optic transmission Yujie Ding, Lehigh University Michal Lipson, Cornell University for contributions to high terahertz power generators for contributions to design and applications of nanoscale Takatomo Enoki, Nippon Telegraph and Telephone photonic devices Corporation, NTT Cun-Zheng Ning, Arizona State University for contributions to compound semiconductor high speed for contributions to nanophotonics and nanowire lasers integrated circuits for optical and wireless communication systems Masaya Notomi, NTT Basic Research Laboratories Rene-Jean Essiambre, Bell Labs, Alcatel-Lucent for leadership in the development of photonic crystals and for contributions to fiber nonlinearities in optical telecommu- applications nication systems William Shieh, The University of Melbourne Sailing He, The Royal Institute of Technology (Sweden) for contributions to coherent optical orthogonal frequency- for contributions to subwavelength photonics division multiplexing Tetsuya Kawanishi, National Institute of Information & Haruhiko Tsuchiya, University of Yamanashi Communications Technology for contributions to single-mode optical fiber transmission

IEEE Photonics Society 2013 Young Investigator Award Recipient: Alexandra Boltasseva

The IEEE Photonics Society Young Investigator and metamaterials. In 2011 she received the MIT Award was established to honor an individual Technology Review Top Young Innovator (TR35) who has made outstanding technical contribu- award that “honors 35 innovators under 35 each tions to photonics (broadly defined) prior to his year whose work promises to change the world”, or her 35th birthday. Nominees must be under 35 the Purdue College of Engineering Early Career Re- years of age on 30 September of the year in which search Award, the Young Researcher Award in Ad- the nomination is made. Candidates need not be vanced Optical Technologies from the University members of the IEEE or the Photonics Society. of Erlangen-Nuremberg in Germany in 2009 and The deadline for nominations is 30 September. the Young Elite-Researcher Award from the Danish The 2013 Young Investigator Award will be presented to Council for Independent Research in 2008 (awarded annually Alexandra Boltasseva, “For seminal contributions to the devel- to 20 scientists across all disciplines, including liberal arts). She opment of metal-dielectric waveguides for integrated optics is topical editor for Optics Letters and Journal of Optics and and novel approaches for realization of nanoplasmonic devices.” guest editor for Advances in OptoElectronics, a senior mem- Alexandra Boltasseva is an Assistant Professor at the School ber of the OSA, member of the IEEE, SPIE and MRS. She has of Electrical and Computer Engineering and Birck Nanotech- co-authored three invited book chapters and 65 research papers nology Center, Purdue University, and an adjunct Associate Pro- in refereed journals. She has an h-index of 22 (ISI Web of Sci- fessor at Technical University of Denmark (DTU). She received ence)/26 (Google Scholar) with a total number of citations above her Ph.D. in Electrical Engineering at DTU in 2004. Alexan- 1500. Alexandra has been featured as an invited speaker at 58 dra specializes in nanophotonics, nanofabrication, plasmonics international conferences and leading research centers.

24 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 IEEE/OSA JOURNAL OF

LightwaveTechnology

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Februaryhttp://mc.manuscriptcentral.com/jlt-ieee 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 25 Membership Section

Benefits of IEEE Senior Membership There are many benefits to becoming an IEEE Senior Member: • The professional recognition of your peers for technical and professional excellence • An attractive fine wood and bronze engraved Senior Member plaque to proudly display. • Up to $25 gift certificate toward one new Society membership. • A letter of commendation to your employer on the achievement of Senior member grade (upon the request of the newly elected Senior Member.) • Announcement of elevation in Section/Society and/or local newsletters, newspapers and notices. • Eligibility to hold executive IEEE volunteer positions. • Can serve as Reference for Senior Member applicants. • Invited to be on the panel to review Senior Member applications. The requirements to qualify for Senior Member elevation are a candidate shall be an engineer, scientist, educator, technical executive or originator in IEEE-designated fields. The candidate shall have been in professional practice for at least ten years and shall have shown significant performance over a period of at least five of those years. To apply, the Senior Member application form is available in 3 formats: Online, downloadable, and electronic version. For more information or to apply for Senior Membership, please see the IEEE Senior Member Program website: http:// www.ieee.org/organizations/rab/md/smprogram.html

Newly Elevated Senior Members

John Ballato Wei Jiang Stephan Pachnicke Yohan Barbarin Masahiko Jinno Marco Petrovich John E. Batubara Khurram Karim Qureshi Preeta Sharan Alejandro Carballar Franco Kueeppers Eugene Alexander Tikhonov Chi Wai Chow Prasant Kumar Sahu Masashi Usami Jennifer E Hastie Zhenqiang Ma Michael Vasilyev Fred Heismann Sergey A Nikishin Henry Zmuda Stuart Jackson

26 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Conference Section

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February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 27 Conference Section (cont’d)

Beyond Copper. Beyond 100G. Beyond Next Gen. Only one conference and exposition in the world brings together the thought leaders and solutions providers to present the latest advances in networking for data, communications, and IT infrastructure. From the ideas that will become tomorrow’s solutions to the solutions your business needs today—you’ll ﬁ nd them at OFC/NFOEC. www.ofcnfoec.org Advancing optical solutions in telecom, datacom, computing and more!

Technical Conference 17-21 March Sponsored by: Exposition 19-21 March Anaheim Convention Center Anaheim, CA USA

28 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Conference Section (cont’d)

OFC/NFOEC a Must-Attend in 2013 Industry-leading optical communications conference covers cloud services, flex grid, photonic integration, wireless backhaul, datacom, more

For those working in optical communications, OFC/ ruptive Technology or Research Curiosity?” OFC/NFOEC NFOEC remains the primary conference to attend to keep gives the conference delegates not just the opportunity to up to date with the latest developments in the field. With hear great talks in the 105 technical sessions including 21 more than 800 presentations across five days of program- tutorials, but also to interact with those who are leading ming this year, and 12,000 attendees at last year’s event, it’s the research and development. Highlights of the technical easy to see how the entire community is well represented at program include two special symposia, one concerning “En- the conference. This year’s conference takes place in Ana- abling the Cloud” and a second addressing the “Convergence heim, Calif. March 17–21. of Wireless and Optical Networking.” The conference cul- Headlining the event are three keynote speakers at the minates with the post-deadline sessions on Thursday eve- well-attended Plenary & Awards Session. The CEO of Bra- ning where the very latest developments, submitted just two zil’s state-owned telecom service provider Telebras, Caio weeks before the conference begins are presented. Bonilha, will discuss that country’s present efforts in de- Besides all the technical highlights, attendees can’t miss ploying 20,000 miles of high-speed broadband backbone. the three-day exhibition, featuring 550 companies and a Software-defined networking (SDN) is an emerging, and spate of programming, including the perennial favorites sometimes contentious, topic in the community. Nick Mc- Market Watch and Service Provider Summit (SPS). In an- Keown of Stanford University—SDN’s co-inventor—will other demonstration of its dedication to staying on top offer his perspective on the topic. And CEO Brian Protiva of the latest trends, SPS will feature keynote presentation of telecom company ADVA Optical Networking, based in from Joe Weinman, SVP of Cloud Services and Strategy at Germany, will take a look at the future of network infra- Telx, who will take a look at the economics of the cloud—a structure and what that means for vendors and others in term he dubs “cloudonomics”—and what it means for the the business. The keynote talks are preceded by awards next generation networks. Market Watch dives deep into presentations from the three co-sponsoring societies (IEEE the business of telecom with panels on the state of the in- Photonics Society, IEEE ComSoc and the Optical Society dustry and high-speed pluggable optics in the data center, [OSA]), including the Tyndall Award–OSA and IEEE Pho- to name a few. tonics Society’s top award for optical communications— The conference promises to deliver high-quality content which will be presented to James Coleman of UIUC. on the latest topics the community is working on now – This year will feature 12 interactive workshops, address- from cloud and datacenter networking to space division ing many of the current hot topics, from trying to answer, multiplexing, flex grids and DSN to the convergence of op- “If the technology for SDM exists, do we want to use it?” to tical and wireless networks, along with networks at 100G, “Does analog photonics have a role in a digital world?” Says 400G, 1 TB and beyond. OFC/NFOEC 2013 Program Co-Chair Seb Savory of Uni- Photo possibilities from OFC/NFOEC 2012 (all are courtesy versity College London: “Personally I’m looking forward to OFC/NFOEC). Download using the “actions” tab. the workshops where the technical community can come http://www.flickr.com/photos/opticalsociety/6819145254/in/ together to discuss current hot topics in the field. This year set-72157629534711783 we’ve gone to great lengths to make sure that the work- http://www.flickr.com/photos/opticalsociety/6962347027/in/ shops are interactive, with a maximum of 90 minutes of set-72157629534711783 scheduled talks in the 3 hour session to leave plenty of time http://www.flickr.com/photos/opticalsociety/7448546268/in/ for discussion.” set-72157629542545615 As in previous years there will be an interactive rump All: http://www.flickr.com/photos/opticalsociety/collections/ session, the topic of this year’s being “Silicon Photonics: Dis- 72157629542169115/

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 29 Conference Section (cont’d) JOIN US!

Eldorado Hotel & Spa Registration Deadline Santa Fe New Mexico 5 April 2013 5-8 May 2013 For more information visit www.OI-IEEE.org

30 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Conference Section (cont’d) CALL FOR PAPERS

IEEE Photonics Society 2013 SUMMER TOPICALS Meeting Series Paper Submission Deadline: 29 March 2013 8-10 JULY 2013 HILTON WAIKOLOA VILLAGE, WAIKOLOA HAWAII FEATURED TOPICS Micro and Nano-Cavity Integrated Photonics Spatial Division Multiplexing Quantum Photonics & Communication Non-Reciprocal Photonic Devices

Data Center Photonics www.SUM-IEEE.org

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 31 Conference Section (cont’d) 10th International Conference on Group IV Photonics 2013

www.gfp-ieee.org

CALL FOR PAPERS Submission Deadline:15 March 2013 28-30 August 2013 28-30 Grand Hilton Seoul

32 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Conference Section (cont’d)

10th Avionics, Fiber-Optics & Photonics Conference 2013

CALL FOR PAPERS Submission Deadline 10 May 2013

1-3 October 2013 Holiday Inn on the Bay, San Diego CA, USA FOR MORE INFORMATIMATION VISITIT WWW.AVFOP-IEEE.ORG

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 33 Conference Section (cont’d)

CCALLALL FORFOR PAPERPAPERS Submission Deadline 19 April 2013

88-12-12 SEPEPTEMBEREMBER 22013013 Hyattatt RReegenceencey BBeellllevue,evue, BeBellllevueevue WasWashiningtonton UUSSA

General Chair David Plant , McGill University, Canada For more information visit Member-At- Large www. IPC-IEEE.org Susumu Noda, Kyoto University, Japan or Program Chair Martin Dawson, University of Strathclyde, Scotland www.PhotonicsConferences.org

34 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Conference Section (cont’d)

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February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 35 Conference Section (cont’d) Forthcoming Meetings with ICO Participation

ICO, THE PLACE WHERE THE WORLD OF OPTICS MEET

Responsibility for the correctness of the information on this page rests with ICO, the International Commission for Optics; http://www.ico-optics.org/. President: Prof. Duncan T. Moore, Biomedical Engineering and Business Administration, Univer- sity of Rochester, USA; [email protected]. Associate Secretary: Prof. Gert von Bally, Centrum für Biomedizinische Optik und Photonik, Univer- sitätsklinikum Münster, Robert-Koch-Straße 45, 48149 Münster, Germany; [email protected]

Beginning of 2013 [email protected] [email protected] 1st EOS Topical Meeting on http://www.icopen.com.sg/ http://www.optica.pt/etop2013/ Photonics for Sustainable Develop- ment - Focus on the Mediterranean 15–18 April 2013 16–19 September 2013 (PSDM 2011) SPIE Optics + Optoelectronics 2013 Information Photonics 2013, Tunis, Tunisia Prague, Czech Republic Warsaw, Poland Contact: Julia Dalichow, Contact: Karin Burger, Contact: Marian Marciniak, phone: +49 511 2788 155, phone: +442920894749, phone: +48 22 5128715, fax: +49 511 2788 117 fax: +442920894750, fax: +48 22 5128715, [email protected] [email protected] [email protected] www.myeos.org/events/psdm2011 http://spie.org/optics-optoelectronics. xml 18–21 September 2013 4–15 February 2013 The Eleventh International ICTP Winter College on Optics: 22–26 July, 2013 Conference on Correlation Optics Trends in Laser Development and 8th Iberoamerican Optics Meeting/ “Correlation Optics’13” Multidisciplinary Applications to 11th Latinamerican Meeting on Chernivtsi, Ukraine Science and Industry Optics, Lasers and Applications Contact: Oleg V. Angelsky, Trieste, Italy (RIAO/OPTILAS 2013) phone: (380-3722)44730, Contact: ICTP Secretariat, Porto, Portugal fax: (380-3722)44730, phone: +39-040-2240-9932; Contact: Manuel Filipe P. C. [email protected] fax: +39-040-2240-7932; Martins Costa, www.itf.cv.ua/corropt13/ [email protected] phone: 00351967642732, http://cdsagenda5.ictp.it/full_display. [email protected] 27–30 October 2013 php?email=0&ida=a12164 http://riaooptilas2013.inescporto.pt ICO Topical Meeting: 18th Microoptics Conference (MOC’13) 9–11 April 2013 23–26 July, 2013 Tokyo, Japan icOPEN2013 (International Education in Optics and Photonics Contact: Tomoyuki Miyamoto; Conference on Optics in Precision “ETOP 2013” phone: +81-45-924-5059; Engineering and Nanotechnology) Porto, Portugal fax: +81-45-924-5059; Singapore Contact: Manuel Filipe P. C. [email protected] Contact: Anand Asundi, Martins Costa, http://www.comemoc.com/moc13/ phone: 67905936, fax: 67924062, phone: 00351967642732,

36 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Conference Section (cont’d)

IEEE Photonics Society Co–Sponsored Events - 2013

SOPO May 23—15, 2013 2012 3rd International Conference on Photonics Wuhan University Beijing, China http://www.sopoconf.org/2013/

PVSC June 16—21, 2013 39th IEEE Photovoltaic Specialists Conference Tampa Convention Center Tampa, FL, USA http://www.ieee-pvsc.org/PVSC39/

NUSOD August 19—22, 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices University of British Columbia (UBC) Vancouver, Canada http://www.nusod.org/2013/

MWP October 21—23, 2013 2013 IEEE International Topical Meeting on Microwave Photonics Hotel Monaco Alexandria, VA, USA http://www.mwp2013.org/

“Nick” Cartoon Series by Christopher Doerr

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 37 5IJTQVCMJDBUJPOPčFSTPQFOBDDFTTPQUJPOTGPSBVUIPST *&&&0QFO"DDFTT1VCMJTIJOH

What does IEEE Open Access mean to an author? t5PQRVBMJUZQVCMJTIJOHXJUIFTUBCMJTIFEJNQBDUGBDUPST t*ODSFBTFEFYQPTVSFBOESFDPHOJUJPOBTBUIPVHIUMFBEFS t"DPOTJTUFOU*&&&QFFSSFWJFXTUBOEBSEPGFYDFMMFODF t6OSFTUSJDUFEBDDFTTGPSSFBEFSTUPEJTDPWFSZPVSQVCMJDBUJPOT t(SFBUXBZUPGVMmMMBSFRVJSFNFOUUPQVCMJTIPQFOBDDFTT

Learn more about IEEE Open Access Publishing: www.ieee.org/open-access

38 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Publication Section

Call for Papers Announcing an Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS on Optical Modulators – Technologies and Applications

Submission Deadline: March 1, 2013

The IEEE Journal of Selected Topics in Quantum Electronics (JSTQE) invites manuscript submissions in the area of Optical Modulators – Technologies and Applications. The purpose of this issue of JSTQE is to document leading-edge work in this field through a collection of original and invited papers that encompass different material systems including (but are not limited to): • Si • polymer • InP • PLZT • GaAs • organic crystal • LiNbO3 Papers are solicited on the science, technologies and applications of modulators for the amplitude, phase, frequency and state-of- polarization of optical signals. All modulation frequencies and operating wavelengths relevant to quantum electronics are of interest.

The Primary Guest Editor for this issue is Graham Reed, University of Southampton, UK. The Guest Editors for this issue are Sakellaris Mailis, University of Southampton, UK, Mike Wale, Oclaro, UK, and Alan Willner, University of Southern California, USA.

The deadline for submission of manuscripts is March 1, 2013. Unedited preprints of accepted manuscripts are normally posted online on IEEE Xplore within 1 week of authors uploading their final files in the ScholarOne Manuscripts submission system. The final copy-edited and XML-tagged version of a manuscript is posted on IEEE Xplore as soon as possible once page numbers can be assigned. This version replaces the preprint and is usually posted well before the hardcopy of the issue is published. Hardcopy publication of the issue is scheduled for November/December 2013.

All submissions will be reviewed in accordance with the normal procedures of the Journal.

For inquiries regarding this Special Issue, please contact: JSTQE Editorial Office - Chin Tan Lutz IEEE/Photonics Society 445 Hoes Lane, Piscataway, NJ 08854, U.S.A. Phone: 732-465-5813, Email: [email protected]

The following supporting documents are required during the mandatory online submission at: http://mc.manuscriptcentral.com/jstqe-pho

2) MS Word document with full contact information for all authors as indicated below: Last name (Family name), First name, Suffix (Dr./Prof./Ms./Mr.), Affiliation, Department, Address, Telephone, Facsimile, Email.

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 39 Publication Section (cont’d)

Call for Papers Announcing an Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS on Graphene Optoelectronics

Submission Deadline: April 1, 2013

The IEEE Journal of Selected Topics in Quantum Electronics (JSTQE) invites manuscript submissions in the area of Graphene Optoelectronics. Graphene, a one atom thick sheet of carbon, has already led to many breakthroughs in diverse areas of physics and engineering. Due to its unique combination of electronic and optical properties, it has recently also been recognized as a promising material for applications in optoelectronics. The absence of a bandgap and the linear dispersion of the Dirac fermions in graphene enable devices operating at wavelengths from the terahertz to the ultraviolet regime. Graphene enables a number of applications in optoelectronics, ranging from solar cells and light-emitting devices to touch screens, photodetectors and optical modulators. The purpose of this issue of JSTQE is to present the state of the art and recent developments in the field, from both experimental and theoretical perspectives. Topics include (but are not limited to): • Transparent conductors • Polarizers • Photovoltaic devices • Touch screens • Light-emitting devices • Optical isolators • Photodetectors • Terahertz devices • Optical modulators • Plasmonic devices • Flexible smart windows and displays • Metamaterials • Saturable absorbers and ultrafast lasers • Nano-photonics components • Optical limiters • Optical and plasmonic waveguides • Optical frequency converters • Multi-layered 2D hybrid structures

The Primary Guest Editor for this issue is Thomas Mueller, Vienna University of Technology, Austria. The Guest Editors for this issue are Andrea Ferrari, University of Cambridge, UK, Frank Koppens, Institute of Photonic Sciences (ICFO), Spain, Fengnian Xia, IBM Watson Research, USA, and Xiaodong Xu, University of Washington, USA.

The deadline for submission of manuscripts is April 1, 2013. Unedited preprints of accepted manuscripts are normally posted online on IEEE Xplore within 1 week of authors uploading their final files in the ScholarOne Manuscripts submission system. The final copy-edited and XML-tagged version of a manuscript is posted on IEEE Xplore as soon as possible once page numbers can be assigned. This version replaces the preprint and is usually posted well before the hardcopy of the issue is published. Hardcopy publication of the issue is scheduled for January/February 2014.

All submissions will be reviewed in accordance with the normal procedures of the Journal.

The following supporting documents are required during the mandatory online submission at: http://mc.manuscriptcentral.com/jstqe-pho

1) PDF or MS Word manuscript (double column format, up to 12 pages for an invited paper, up to 8 pages for a contributed paper). Manuscripts over the standard page limit will have an overlength charge of $220.00 per page imposed. Biographies of all authors are mandatory, photographs are optional. You may find the Tools for Authors link useful: http://www.ieee.org/web/publications/authors/transjnl/index.html 2) MS Word document with full contact information for all authors as indicated below: Last name (Family name), First name, Suffix (Dr./Prof./Ms./Mr.), Affiliation, Department, Address, Telephone, Facsimile, Email.

40 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Publication Section (cont’d)

Preliminary Call for Papers

Announcing an Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS on Biophotonics

Submission Deadline: June 1, 2013

The emerging field of Biophotonics is one of the most extensively growing areas in biomedical technology. It has opened up new horizons for the extensive transfer of applicable state-of-the-art techniques in the areas of quantum electronics, lasers and electro- optics to the life sciences and medicine. Recently developed innovative biophotonic technologies impose significant impact on biomedical research and public health, since they provide advanced minimally invasive, cost-effective and rapid techniques for diagnostics, monitoring and treatment of a variety of diseases. The IEEE Journal of Selected Topics in Quantum Electronics (JSTQE) invites manuscript submissions in the area of Biophotonics. The purpose of this issue of JSTQE is to highlight the recent progress and trends in the development of leading-edge biophotonics technologies through a collection of original and invited papers ranging from fundamental research to advanced applications.

The Primary Guest Editor for this issue is Ilko K. Ilev, U.S. Food and Drug Administration, USA.

The deadline for submission of manuscripts is June 1, 2013. Unedited preprints of accepted manuscripts are normally posted online on IEEE Xplore within 1 week of the final files being uploaded by the author(s) on the ScholarOne Manuscripts submission system. Posted preprints have digital object identifiers (DOIs) assigned to them and are fully citable. Once available, final copy- edited and XML-tagged versions of manuscripts replace the preprints on IEEE Xplore. This usually occurs well before the hardcopy publication date. These final versions have article numbers assigned to them to accelerate the online publication; the same article numbers are used for the print versions of JSTQE. Hardcopy publication of the issue is scheduled for March/April 2014.

All submissions will be reviewed in accordance with the normal procedures of the Journal.

The following supporting documents are required during the mandatory online submission at: http://mc.manuscriptcentral.com/jstqe-pho

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 41 Publication Section (cont’d)

Preliminary Call for Papers

Announcing an Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS on Nanobiophotonics

Submission Deadline: August 1, 2013

Nanobiophotonics is an advanced field of modern science and biomedical nanotechnology. Recently, it has been leading to the development of innovative nanotechnologies that provide noninvasive optical imaging, sensing, precise diagnostics and therapeutics at cellular, intracellular and molecular levels with an unprecedented ultrahigh resolution beyond the diffraction barrier in the subwavelength nanoscale range (below 100 nm). The IEEE Journal of Selected Topics in Quantum Electronics (JSTQE) invites manuscript submissions in the area of Nanobiophotonics. The purpose of this issue of JSTQE is to highlight the recent progress and trends in developing of leading-edge nanobiophotonics technologies through a collection of original and invited papers ranging from fundamental research to advanced applications.

The Primary Guest Editor for this issue is Ilko K. Ilev, U.S. Food and Drug Administration, USA.

The deadline for submission of manuscripts is August 1, 2013. Unedited preprints of accepted manuscripts are normally posted online on IEEE Xplore within 1 week of the final files being uploaded by the author(s) on the ScholarOne Manuscripts submission system. Posted preprints have digital object identifiers (DOIs) assigned to them and are fully citable. Once available, final copy- edited and XML-tagged versions of manuscripts replace the preprints on IEEE Xplore. This usually occurs well before the hardcopy publication date. These final versions have article numbers assigned to them to accelerate the online publication; the same article numbers are used for the print versions of JSTQE. Hardcopy publication of the issue is scheduled for May/June 2014.

All submissions will be reviewed in accordance with the normal procedures of the Journal.

The following supporting documents are required during the mandatory online submission at: http://mc.manuscriptcentral.com/jstqe-pho

42 IEEE PHOTONICS SOCIETY NEWSLETTER February 2013 Publication Section (cont’d)

Preliminary Call for Papers

Announcing an Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS on Silicon Photonics

Submission Deadline: October 1, 2013

The IEEE Journal of Selected Topics in Quantum Electronics (JSTQE) invites manuscript submissions in the area of Silicon Photonics. The purpose of this issue of JSTQE is to document leading-edge work in this field through a collection of original and invited papers ranging from fundamental physics to applications.

The Primary Guest Editor for this issue is Laurent Vivien, University of Paris Sud, France.

The deadline for submission of manuscripts is October 1, 2013. Unedited preprints of accepted manuscripts are normally posted online on IEEE Xplore within 1 week of the final files being uploaded by the author(s) on the ScholarOne Manuscripts submission system. Posted preprints have digital object identifiers (DOIs) assigned to them and are fully citable. Once available, final copy- edited and XML-tagged versions of manuscripts replace the preprints on IEEE Xplore. This usually occurs well before the hardcopy publication date. These final versions have article numbers assigned to them to accelerate the online publication; the same article numbers are used for the print versions of JSTQE. Hardcopy publication of the issue is scheduled for July/August 2014.

All submissions will be reviewed in accordance with the normal procedures of the Journal.

The following supporting documents are required during the mandatory online submission at: http://mc.manuscriptcentral.com/jstqe-pho

February 2013 IEEE PHOTONICS SOCIETY NEWSLETTER 43 ADVERTISER’S INDEX The Advertiser’s Index contained in this issue is IEEE Photonics compiled as a service to our readers and advertisers. The publisher is not liable for errors or omis- sions although every effort is made to ensure its Society Newsletter accuracy. Be sure to let our advertisers know you found them through the IEEE Photonics Society Advertising Sales Offices Newsletter. 445 Hoes Lane, Piscataway NJ 08854 Advertiser ...... Page # www.ieee.org/ieeemedia Impact this hard-to-reach audience in their own Society Clemson ��23 publication. For further information on product and recruitment advertising, call your local sales office. General Photonics ��CVR 2 MANAGEMENT Midwest/Ontario, Canada New England/ James A. Vick Will Hamilton Eastern Canada Luxtera ��CVR 3 Sr. Director, Advertising Phone: 269-381-2156 Liza Reich Phone: 212-419-7767 Fax: 269-381-2556 Phone: +1 212 419 7578 Fax: 212-419-7589 [email protected] Fax: 212-419-7589 Optiwave Systems Inc ��CVR 4 [email protected] IN, MI. Canada: Ontario [email protected] ME, VT, NH, MA, RI Santec USA Corp. ��13 Susan E. Schneiderman West Coast/Mountain States Canada: Quebec, Business Development Western Canada Nova Scotia, Manager Marshall Rubin Prince Edward Island, Phone: 732-562-3946 Phone: +1 818 888 2407; Newfoundland, Fax: 732-981-1855 Fax: +1 818 888 4907 New Brunswick [email protected] [email protected] Photonics Society AZ, CO, HI, NM, NV, Southeast Marion Delaney UT, AK, ID, MT, WY, Cathy Flynn Mission Statement Advertising Sales Director OR, WA, CA. Canada: Phone: 770-645-2944 Photonics Society shall advance the interests Phone: 415-863-4717 British Columbia Fax: 770-993-4423 of its members and the laser, optoelectronics, Fax: 415-863-4717 [email protected] [email protected] VA, NC, SC, GA, FL, AL, and photonics professional community by: Europe/Africa/Middle East MS, TN • providing opportunities for information PRODUCT Heleen Vodegel Phone: +44-1875-825-700 exchange, continuing education, and ADVERTISING Midwest/South Central/ Fax: +44-1875-825-701 professional growth; Midatlantic Central Canada [email protected] • publishing journals, sponsoring confer- Lisa Rinaldo Darcy Giovingo Phone: 732-772-0160 Europe, Africa, Middle East ences, and supporting local chapter and Phone: 847-498-4520 Fax: 732-772-0161 Fax: 847-498-5911 student activities; [email protected] Asia/Far East/ [email protected]; • formally recognizing the professional NY, NJ, PA, DE, MD, DC, Pacific Rim AR, IL, IN, IA, KS, LA, contributions of members; KY, WV Susan Schneiderman MI, MN, MO, NE, ND, • representing the laser, optoelectronics, Phone: 732-562-3946 SD, OH, OK, TX, WI. New England/South Central/ Fax: 732-981-1855 and photonics community and serving as Canada: Ontario, Eastern Canada [email protected] Manitoba, Saskatchewan, its advocate within the IEEE, the broader Jody Estabrook Asia, Far East, Pacific Rim, Alberta scientific and technical community, and Phone: 774-283-4528 Australia, New Zealand Fax: 774-283-4527 West Coast/Southwest/ society at large. [email protected] RECRUITMENT Mountain States/Asia ME, VT, NH, MA, RI, CT, ADVERTISING Tim Matteson AR, LA, OK, TX Photonics Society Midatlantic Phone: 310-836-4064 Canada: Quebec, Nova Scotia, Lisa Rinaldo Fax: 310-836-4067 Field of Interest Newfoundland, Prince Edward Phone: 732-772-0160 [email protected] The Field of Interest of the Society shall be la- Island, New Brunswick Fax: 732-772-0161 AZ, CO, HI, NV, NM, sers, optical devices, optical fibers, and associat- [email protected] UT, CA, AK, ID, MT, Southeast ed lightwave technology and their applications NY, NJ, CT, PA, DE, MD, WY, OR, WA. Thomas Flynn DC, KY, WV Canada: British Columbia in systems and subsystems in which quantum Phone: 770-645-2944 electronic devices are key elements. The Society Fax: 770-993-4423 Europe/Africa/Middle East is concerned with the research, development, [email protected] Heleen Vodegel design, manufacture, and applications of ma- VA, NC, SC, GA, FL, AL, MS, TN Phone: +44-1875-825-700 terials, devices and systems, and with the vari- Fax: +44-1875-825-701 ous scientific and technological activities which Midwest/Central Canada [email protected] contribute to the useful expansion of the field of Dave Jones Europe, Africa, quantum electronics and applications. Phone: 708-442-5633 Middle East The Society shall aid in promoting close coop- Fax: 708-442-7620 [email protected] eration with other IEEE groups and societies IL, IA, KS, MN, MO, NE, in the form of joint publications, sponsorship ND, SD, WI, OH of meetings, and other forms of information Canada: Manitoba, exchange. Appropriate cooperative efforts will Saskatchewan, Alberta also be undertaken with non-IEEE societies.

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