Quantum Phase Transitions in the Bose Hubbard Model and in a Bose-Fermi Mixture
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Mott Insulators Atomic Limit - View Electrons in Real Space
Mott insulators Atomic limit - view electrons in real space Virtual system: lattice of H-Atoms: aB << d 2aB d H Mott insulators Atomic limit - view electrons in real space lattice of H-Atoms: Virtual system: aB << d 2aB d hopping - electron transfer - H H + -t ionization energy H delocalization localization kinetic energy charge excitation energy metal Mott insulator Mott insulators Atomic limit - view electrons in real space lattice of H-Atoms: Virtual system: aB << d 2aB d hopping - electron transfer ionization energy H -t S = 1/2 Mott isolator effective low-energy model low-energy physics no charge fluctuation only spin fluctuation Mott insulators Metal-insulator transition from the insulating side Hubbard-model: n.n. hopping onsite repulsion density: n=1 „ground state“ t = 0 E charge excitation U h d Mott insulators Metal-insulator transition from the insulating side Hubbard-model: n.n. hopping onsite repulsion density: n=1 t > 0 „ground state“ E W = 4d t U charge excitation h d metal-insulator transition: Uc = 4dt Mott insulators Metal-insulator transition from the metallic side h d tight-binding model density empty sites h = 1/4 doubly occupied sites d = 1/4 half-filled singly occupied sites s = 1/2 conduction band reducing mobility Mott insulators Gutzwiller approximation Metal-insulator transition from the metallic side Gutzwiller-approach: variational diminish double-occupancy uncorrelated state variational groundstate density of doubly occupied sites renormalized hopping Mott insulators Gutzwiller approximation Metal-insulator -
First-Principles Calculations and Model Hamiltonian Approaches to Electronic and Optical Properties of Defects, Interfaces and Nanostructures
First-principles calculations and model Hamiltonian approaches to electronic and optical properties of defects, interfaces and nanostructures by Sangkook Choi A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Physics in the Grauduate Division of the University of California, Berkeley Committee in charge: Professor Steven G. Louie, Chair Professor John Clarke Professor Mark Asta Fall 2013 First-principles calculations and model Hamiltonian approaches to electronic and optical properties of defects, interfaces and nanostructures Copyright 2013 by Sangkook Choi Abstract First principles calculations and model Hamiltonian approaches to electronic and optical properties of defects, interfaces and nanostructures By Sangkook Choi Doctor of Philosophy in Physics University of California, Berkeley Professor Steven G. Louie, Chair The dynamics of electrons governed by the Coulomb interaction determines a large portion of the observed phenomena of condensed matter. Thus, the understanding of electronic structure has played a key role in predicting the electronic and optical properties of materials. In this dissertation, I present some important applications of electronic structure theories for the theoretical calculation of these properties. In the first chapter, I review the basics necessary for two complementary electronic structure theories: model Hamiltonian approaches and first principles calculation. In the subsequent chapters, I further discuss the applications of these approaches to nanostructures (chapter II), interfaces (chapter III), and defects (chapter IV). The abstract of each section is as follows. ● Section II-1 The sensitive structural dependence of the optical properties of single-walled carbon nanotubes, which are dominated by excitons and tunable by changing diameter and chirality, makes them excellent candidates for optical devices. -
8.7 Hubbard Model
OUP CORRECTED PROOF – FINAL, 12/6/2019, SPi 356 Models of Strongly Interacting Quantum Matter which is the lower edge of a continuum of excitations whose upper edge is bounded by ω(q) πJ cos (q/2). (8.544) = The continuum of excitations develops because spinons are always created in pairs, and therefore the momentum of the two spinons can be distributed in a continuum of different ways. Neutron scattering experiments on quasi-one-dimensional materials like KCuF3 have corroborated the picture outlined here (see, e.g. Tennant et al.,1995). In dimensions higher than one, separating a !ipped spin into a pair of kinks, or a magnon into a pair of spinons, costs energy, which thus con"nes spinons in dimensions d 2. ≥The next section we constructs the Hubbard model from "rst principles and then show how the Heisenberg model can be obtained from the Hubbard model for half- "lling and in the limit of strong on-site repulsion. 8.7 Hubbard model The Hubbard model presents one of the simplest ways to obtain an understanding of the mechanisms through which interactions between electrons in a solid can give rise to insulating versus conducting, magnetic, and even novel superconducting behaviour. The preceding sections of this chapter more or less neglected these interaction or correlation effects between the electrons in a solid, or treated them summarily in a mean-"eld or quasiparticle approach (cf. sections 8.2 to 8.5). While the Hubbard model was "rst discussed in quantum chemistry in the early 1950s (Pariser and Parr, 1953; Pople, 1953), it was introduced in its modern form and used to investigate condensed matter problems in the 1960s independently by Gutzwiller (1963), Hubbard (1963), and Kanamori (1963). -
9 Quantum Phases and Phase Transitions of Mott Insulators
9 Quantum Phases and Phase Transitions of Mott Insulators Subir Sachdev Department of Physics, Yale University, P.O. Box 208120, New Haven CT 06520-8120, USA, [email protected] Abstract. This article contains a theoretical overview of the physical properties of antiferromagnetic Mott insulators in spatial dimensions greater than one. Many such materials have been experimentally studied in the past decade and a half, and we make contact with these studies. Mott insulators in the simplest class have an even number of S =1/2 spins per unit cell, and these can be described with quantitative accuracy by the bond operator method: we discuss their spin gap and magnetically ordered states, and the transitions between them driven by pressure or an applied magnetic field. The case of an odd number of S =1/2 spins per unit cell is more subtle: here the spin gap state can spontaneously develop bond order (so the ground state again has an even number of S =1/2 spins per unit cell), and/or acquire topological order and fractionalized excitations. We describe the conditions under which such spin gap states can form, and survey recent theories of the quantum phase transitions among these states and magnetically ordered states. We describe the breakdown of the Landau-Ginzburg-Wilson paradigm at these quantum critical points, accompanied by the appearance of emergent gauge excitations. 9.1 Introduction The physics of Mott insulators in two and higher dimensions has enjoyed much attention since the discovery of cuprate superconductors. While a quan- titative synthesis of theory and experiment in the superconducting materials remains elusive, much progress has been made in describing a number of antiferromagnetic Mott insulators. -
Structural Superfluid-Mott Insulator Transition for a Bose Gas in Multi
Structural Superfluid-Mott Insulator Transition for a Bose Gas in Multi-Rods Omar Abel Rodríguez-López,1, ∗ M. A. Solís,1, y and J. Boronat2, z 1Instituto de Física, Universidad Nacional Autónoma de México, Apdo. Postal 20-364, 01000 Ciudad de México, México 2Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, E-08034 Barcelona, España (Dated: Modified: January 12, 2021/ Compiled: January 12, 2021) We report on a novel structural Superfluid-Mott Insulator (SF-MI) quantum phase transition for an interacting one-dimensional Bose gas within permeable multi-rod lattices, where the rod lengths are varied from zero to the lattice period length. We use the ab-initio diffusion Monte Carlo method to calculate the static structure factor, the insulation gap, and the Luttinger parameter, which we use to determine if the gas is a superfluid or a Mott insulator. For the Bose gas within a square Kronig-Penney (KP) potential, where barrier and well widths are equal, the SF-MI coexistence curve shows the same qualitative and quantitative behavior as that of a typical optical lattice with equal periodicity but slightly larger height. When we vary the width of the barriers from zero to the length of the potential period, keeping the height of the KP barriers, we observe a new way to induce the SF-MI phase transition. Our results are of significant interest, given the recent progress on the realization of optical lattices with a subwavelength structure that would facilitate their experimental observation. I. INTRODUCTION close experimental realization of a sequence of Dirac-δ functions, forming the well-known Dirac comb poten- Phase transitions are ubiquitous in condensed matter tial [13], and could be useful to test many mean-field physics. -
Arxiv:2002.00554V2 [Cond-Mat.Str-El] 28 Jul 2020
Topological Bose-Mott insulators in one-dimensional non-Hermitian superlattices Zhihao Xu1, 2, 3, 4, ∗ and Shu Chen2, 5, 6, y 1Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 3Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P.R.China 4State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, P.R.China 5School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China 6Yangtze River Delta Physics Research Center, Liyang, Jiangsu 213300, China We study the topological properties of Bose-Mott insulators in one-dimensional non-Hermitian superlattices, which may serve as effective Hamiltonians for cold atomic optical systems with either two-body loss or one-body loss. We find that in the strongly repulsive limit, the Mott insulator states of the Bose-Hubbard model with a finite two-body loss under integer fillings are topological insulators characterized by a finite charge gap, nonzero integer Chern numbers, and nontrivial edge modes in a low-energy excitation spectrum under an open boundary condition. The two-body loss suppressed by the strong repulsion results in a stable topological Bose-Mott insulator which has shares features similar to the Hermitian case. However, for the non-Hermitian model related to the one-body loss, we find the non-Hermitian topological Mott insulators are unstable with a finite imaginary excitation gap. Finally, we also discuss the stability of the Mott phase in the presence of two-body loss by solving the Lindblad master equation. -
Polariton Panorama (QED) with Atomic Systems
Nanophotonics 2020; ▪▪▪(▪▪▪): 20200449 Review D. N. Basov*, Ana Asenjo-Garcia, P. James Schuck, Xiaoyang Zhu and Angel Rubio Polariton panorama https://doi.org/10.1515/nanoph-2020-0449 (QED) with atomic systems. Here, we attempt to summarize Received August 5, 2020; accepted October 2, 2020; (in alphabetical order) some of the polaritonic nomenclature published online November 11, 2020 in the two subfields. We hope this summary will help readers to navigate through the vast literature in both of Abstract: In this brief review, we summarize and elaborate these fields [1–520]. Apart from its utilitarian role, this on some of the nomenclature of polaritonic phenomena summary presents a broad panorama of the physics and and systems as they appear in the literature on quantum technology of polaritons transcending the specifics of materials and quantum optics. Our summary includes at particular polaritonic platforms (Boxes 1 and 2). We invite least 70 different types of polaritonic light–matter dres- readers to consult with reviews covering many important sing effects. This summary also unravels a broad pano- aspects of the physics of polaritons in QMs [1–3], atomic and rama of the physics and applications of polaritons. A molecular systems [4], and in circuit QED [5, 6], as well as constantly updated version of this review is available at general reviews of the closely related topic of strong light– https://infrared.cni.columbia.edu. matter interaction [7–11, 394]. A constantly updated version Keywords: portions; quantum electrodynamics; quantum is available at https://infrared.cni.columbia.edu. materials; quantum optics. Anderson–Higgs polaritons [12, 13]. -
The Limits of the Hubbard Model
The Limits of the Hubbard Model David Grabovsky May 24, 2019 1 CONTENTS CONTENTS Contents 1 Introduction and Abstract 4 I The Hubbard Hamiltonian 5 2 Preliminaries 6 3 Derivation of the Hubbard Model 9 3.1 Obtaining the Hamiltonian . .9 3.2 Discussion: Energy Scales . 10 4 Variants and Conventions 12 5 Symmetries of the Hubbard Model 14 5.1 Discrete Symmetries . 14 5.2 Gauge Symmetries . 14 5.3 Particle-Hole Symmetry . 15 II Interaction Limits 17 6 The Fermi-Hubbard Model 18 6.1 Single Site: Strong Interactions . 18 6.2 Tight Binding: Weak Interactions . 20 7 The Bose-Hubbard Model 22 7.1 Single Site: Strong Interactions . 22 7.2 Tight Binding: Weak Interactions . 24 III Lattice Limits 25 8 Two Sites: Fermi-Hubbard 26 8.1 One Electron . 26 8.2 Two Electrons . 27 8.3 Three Electrons . 28 8.4 Complete Solution . 29 9 Two Sites: Bose-Hubbard 33 9.1 One and Two Bosons . 33 9.2 Many Bosons . 35 9.3 High-Temperature Limit . 36 10 Conclusions and Outlook 38 2 CONTENTS CONTENTS IV Appendices 40 A The Hubbard Model from Many-Body Theory 41 B Some Algebraic Results 42 C Fermi-Hubbard Limits 43 C.1 No Hopping . 43 C.2 No Interactions . 44 D Bose-Hubbard Limits 44 D.1 No Hopping . 44 D.2 No Interactions . 46 E Two-Site Thermodynamics 47 E.1 Fermi-Hubbard Model . 47 E.2 Bose-Hubbard Model . 49 F Tridiagonal Matrices and Recurrences 50 3 1 INTRODUCTION AND ABSTRACT 1 Introduction and Abstract The Hubbard model was originally written down in the 1960's as an attempt to describe the behavior of electrons in a solid [1]. -
Mott Insulators
Quick and Dirty Introduction to Mott Insulators Branislav K. Nikoli ć Department of Physics and Astronomy, University of Delaware, U.S.A. PHYS 624: Introduction to Solid State Physics http://www.physics.udel.edu/~bnikolic/teaching/phys624/phys624.html Weakly correlated electron liquid: Coulomb interaction effects When local perturbation δ U ( r ) potential is switched on, some electrons will leave this region in order to ensure ε≃ µ constant F (chemical potential is a thermodynamic potential; therefore, in equilibrium it must be homogeneous throughout the crystal). δ= ε δ n()r eD ()F U () r δ≪ ε assume:e U (r ) F ε→ = θεε − f( , T 0) (F ) PHYS 624: Quick and Dirty Introduction to Mott Insulators Thomas –Fermi Screening Except in the immediate vicinity of the perturbation charge, assume thatδ U ( r ) is caused eδ n (r ) by the induced space charge → Poisson equation: ∇2δU(r ) = − ε − 0 1 ∂ ∂ αe r/ r TF ∇2 = r 2 ⇒ δ U (r ) = 2 −1/ 6 ∂ ∂ 2 rrr r 1 n 4πℏ ε ≃ = 0 rTF , a 0 ε 2 a3 me 2 r = 0 0 TF 2 ε = ⋅23− 3 Cu = e D (F ) nCu8.510 cm , r TF 0.55Å q in vacuum:D (ε )= 0, δ U (r ) = = α F πε 4 0 2 1/3 312n m 2/3ℏ 2/3− 4 1/3 n D()ε= =() 3,3 πεπ2 n = () 222 nr⇒ = () 3 π F ε π2ℏ 2 F TF π 2F 2 2 m a 0 PHYS 624: Quick and Dirty Introduction to Mott Insulators Mott Metal-Insulator Transition 1 a r2≃0 ≫ a 2 TF 4 n1/3 0 −1/3 ≫ n4 a 0 Below the critical electron concentration, the potential well of the screened field extends far enough for a bound state to be formed → screening length increases so that free electrons become localized → Mott Insulators Examples: transition metal oxides, glasses, amorphous semiconductors PHYS 624: Quick and Dirty Introduction to Mott Insulators Metal vs. -
Origin of Mott Insulating Behavior and Superconductivity in Twisted Bilayer Graphene
Origin of Mott Insulating Behavior and Superconductivity in Twisted Bilayer Graphene The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Po, Hoi Chun et al. "Origin of Mott Insulating Behavior and Superconductivity in Twisted Bilayer Graphene." Physical Review X 8, 3 (September 2018): 031089 As Published http://dx.doi.org/10.1103/PhysRevX.8.031089 Publisher American Physical Society Version Final published version Citable link http://hdl.handle.net/1721.1/118618 Terms of Use Creative Commons Attribution Detailed Terms http://creativecommons.org/licenses/by/3.0 PHYSICAL REVIEW X 8, 031089 (2018) Origin of Mott Insulating Behavior and Superconductivity in Twisted Bilayer Graphene Hoi Chun Po,1 Liujun Zou,1,2 Ashvin Vishwanath,1 and T. Senthil2 1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA 2Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA (Received 4 June 2018; revised manuscript received 13 August 2018; published 28 September 2018) A remarkable recent experiment has observed Mott insulator and proximate superconductor phases in twisted bilayer graphene when electrons partly fill a nearly flat miniband that arises a “magic” twist angle. However, the nature of the Mott insulator, the origin of superconductivity, and an effective low-energy model remain to be determined. We propose a Mott insulator with intervalley coherence that spontaneously breaks Uð1Þ valley symmetry and describe a mechanism that selects this order over the competing magnetically ordered states favored by the Hund’s coupling. We also identify symmetry-related features of the nearly flat band that are key to understanding the strong correlation physics and constrain any tight- binding description. -
Arxiv:2007.01582V2 [Quant-Ph] 15 Jul 2020
Preparing symmetry broken ground states with variational quantum algorithms Nicolas Vogt,∗ Sebastian Zanker, Jan-Michael Reiner, and Michael Marthaler HQS Quantum Simulations GmbH Haid-und-Neu-Straße 7 76131 Karlsruhe, Germany Thomas Eckl and Anika Marusczyk Robert Bosch GmbH Robert-Bosch-Campus 1 71272 Renningen, Germany (Dated: July 16, 2020) One of the most promising applications for near term quantum computers is the simulation of physical quantum systems, particularly many-electron systems in chemistry and condensed matter physics. In solid state physics, finding the correct symmetry broken ground state of an interacting electron system is one of the central challenges. The Variational Hamiltonian Ansatz (VHA), a variational hybrid quantum-classical algorithm especially suited for finding the ground state of a solid state system, will in general not prepare a broken symmetry state unless the initial state is chosen to exhibit the correct symmetry. In this work, we discuss three variations of the VHA designed to find the correct broken symmetry states close to a transition point between different orders. As a test case we use the two-dimensional Hubbard model where we break the symmetry explicitly by means of external fields coupling to the Hamiltonian and calculate the response to these fields. For the calculation we simulate a gate-based quantum computer and also consider the effects of dephasing noise on the algorithms. We find that two of the three algorithms are in good agreement with the exact solution for the considered parameter range. The third algorithm agrees with the exact solution only for a part of the parameter regime, but is more robust with respect to dephasing compared to the other two algorithms. -
Mott Transition in the Π-Flux SU(4) Hubbard Model on a Square Lattice
PHYSICAL REVIEW B 97, 195122 (2018) Mott transition in the π-flux SU(4) Hubbard model on a square lattice Zhichao Zhou,1,2 Congjun Wu,2 and Yu Wang1,* 1School of Physics and Technology, Wuhan University, Wuhan 430072, China 2Department of Physics, University of California, San Diego, California 92093, USA (Received 23 March 2018; published 14 May 2018) With increasing repulsive interaction, we show that a Mott transition occurs from the semimetal to the valence bond solid, accompanied by the Z4 discrete symmetry breaking. Our simulations demonstrate the existence of a second-order phase transition, which confirms the Ginzburg-Landau analysis. The phase transition point and the critical exponent η are also estimated. To account for the effect of a π flux on the ordering in the strong-coupling regime, we analytically derive by the perturbation theory the ring-exchange term, which is the leading-order term that can reflect the difference between the π-flux and zero-flux SU(4) Hubbard models. DOI: 10.1103/PhysRevB.97.195122 I. INTRODUCTION dimer orders exist in a projector QMC (PQMC) simulation [30]. With the rapid development of ultracold atom experiments, Considering the significance of density fluctuations in a the synthetic gauge field can be implemented in optical lattice realistic fermionic system, the SU(2N) Hubbard model is a systems [1–4]. Recently, the “Hofstadter butterfly” model prototype model for studying the interplay between density Hamiltonian has also been achieved with ultracold atoms of and spin degrees of freedom. Previous PQMC studies of the 87Rb [5,6]. When ultracold atoms are considered as carriers half-filled SU(2) Hubbard model with a π flux have demon- in optical lattices, they can carry large hyperfine spins.