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Hafnium tetrachloride
Inventory Size (Ml Or G) 103220 Dimethyl Sulfate 77-78-1 500 Ml
Safety Data Sheet Material Name: HFCL4 SDS ID: 00227583P
Hafnium Nitrate Precursor Synthesis and Hfo2 Thin Film Deposition WEIWEI ZHUANG,1 JOHN F. CONLEY,1 YOSHI ONO,1 DAVID R. EVANS1 A
WO 2016/074683 Al 19 May 2016 (19.05.2016) W P O P C T
SEWERA, 853: "2: with A
Australian Atomic Energy Commission
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United States Patent (19) Ill) Patent Number: 5,004,820 Buchwald Et Al
Zirconium Chloride Molecular Species: Combining Electron Impact Mass Spectrometry and First Principles Calculations
US5171549.Pdf
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Scope of the Risk Evaluation for Carbon Tetrachloride (Methane, Tetrachloro-)
Ep 0476805 B1
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Pyrochemical Separation of Zirconium and Hafnium Tetra- Chlorides Using Fused Salt Extractive Distillation Process
BIBLIOTECA This Work Is Licensed Under a Creative
Chemical Vapor Deposition of Hafnium Carbide and Hafnium Nitride G
Safety Data Sheet Material Name: HFCL4; 氯化鉿 SDS ID: 00227583 (TAIWAN)
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Barytes, Bismuth, Hafnium, Helium, Natural Rubber, Phosphorus, Scandium, Tantalum and Vanadium
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No. 1907/2006 (REACH) As Amended Material Name: HFCL4 SDS ID: 00227583 (EU)
Enthalpies of Sublimation of Organic and Organometallic Compounds
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Ultrapur™ Hfcl4
Hafnium Tetrachloride Product Code SAC027
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Hafnium Tetrachloride
Thermodynamic Properties of the Chloride and Fluoride Salts of Zirconium and Hafnium Dissolved in Molten Salt Solvents
The Separation of Zirconium and Hafnium by Distillation : II. an Engineering Appraisal of Aluminum Structural Materials
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Safety Data Sheet
Safety Data Sheet
Solid-Vapor Equilibria of Hafnium and Zirconium Tetrachlorides
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UCC Library and UCC Researchers Have Made This Item Openly Available
Atomic Layer Deposition for Semiconductors Atomic Layer Deposition for Semiconductors Cheol Seong Hwang • Cha Young Yoo Editors
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University of Warwick Institutional Repository