US 2011 0315204A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2011/0315204 A1 Gleason et al. (43) Pub. Date: Dec. 29, 2011 (54) CONDUCTIVE POLYMER ON A TEXTURED Publication Classification OR PLASTC SUBSTRATE (51) Int. Cl. HOIL 3L/02 (2006.01) (76) Inventors: Karen K. Gleason, Cambridge, HOIL 3L/18 (2006.01) MA (US); Vladimir Bulovic, HOIL 33/44 (2010.01) Lexington, MA (US); Miles C. (52) U.S. Cl. ............... 136/256; 257/98: 438/71; 438/29: Barr, Cambridge, MA (US); Jill A. 257/E33.067; 257/E31.13 Rowehl, Watertown, MA (US) (57) ABSTRACT (21) Appl. No.: 12/822,691 A conducting material can include a fibrous Substrate and a conductive polymer coating on a Surface of the fibrous Sub (22) Filed: Jun. 24, 2010 Strate. electrode energy converting region Conductive polymer substrate Patent Application Publication Dec. 29, 2011 Sheet 1 of 9 US 2011/0315204 A1 Patent Application Publication Dec. 29, 2011 Sheet 2 of 9 US 2011/0315204 A1 Ag308 at Y 2 arr; -£66 (48 in) aw 38 - Cup 20 it glass S were i, cowgist3; spin; xx;itic xiii., if scxt get 83 : 33 in -----------------------------------------------------------...------- -0.2 -3.3 O 3, .2 C3 a 3.5 3. Woltage W. s: : s:s wa s 36 s s a was...w pass w.x. *: 3-8:...: : s 8 s s s 8 s s s 8: - : : 8 s s s 8 s s : 8 8 . s s s 8 s s s 8 s --s s s: g 60 i. * Na. 8: : a. s s & k-8 :: i. -8 a. s 3. an. *. s 48 i. & 1. : -. S s 30 3-4-: *. 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Patent Application Publication Dec. 29, 2011 Sheet 8 of 9 US 2011/0315204 A1 Patent Application Publication Dec. 29, 2011 Sheet 9 of 9 US 2011/0315204 A1 US 2011/03 15204 A1 Dec. 29, 2011 CONDUCTIVE POLYMER ON A TEXTURED can include poly(3,4-ethylenedioxythiophene). In some OR PLASTC SUBSTRATE embodiments, the polymer coating can include at least one dopant. TECHNICAL FIELD 0011. In some embodiments, the light absorbing or emit ting device can further include an electrode and an energy 0001. This invention relates to a conductive polymer coat converting region capable of converting energy between pho ing a surface of a textured or plastic Substrate. toenergy and electric energy. The energy converting region can be positioned between the electrode and the polymer BACKGROUND coating. 0012. In some embodiments, the polymer coating can be 0002 Conductive materials, such as conductive sub an anode and the electrode can be a cathode. strates, can be used to build structures with semiconductors to 0013 In some embodiments, the energy converting region create useful devices. Semiconductors are materials that can can include copper phthalocyanine, fullerene-Co or batho contain either an excess of free electrons (N-type) or “holes' cuprine. In some embodiments, the energy converting region (P-type). N- and P-type materials can be joined to form diodes can include poly(p-phenylene vinylene), polyfluorene, poly and transistors. Where the two films meet, negative charges (fluorenylene ethynylene), poly(phenylene ethynylene), can migrate across the junction to the positive side and vice polyfluorene vinylene, or polythiophene. In some embodi Versa, until an equilibrium is reached. This configuration can ments, the energy converting region can include at least one be used to create light emitting diodes (“LEDs) or photovol material selected from the group consisting of silicon, copper taic (“PV) structures. indium diselenide, Zinc oxide, Zinc sulfide, Zinc selenide, Zinc 0003. When a voltage is applied to an LED, a current flows telluride, cadmium oxide, cadmium Sulfide, cadmium through the junction in the form of electrons moving in one Selenide, cadmium telluride, magnesium oxide, magnesium direction while holes move in the other direction. The migra Sulfide, magnesium selenide, magnesium telluride, mercuric tion of ionic charge across the junction causes a higher elec oxide, mercuric sulfide, mercuric selenide, mercuric tellu trical potential than normal, which affects the way electrons ride, aluminum nitride, aluminum phosphide, aluminum ars combine with holes. When an electron combines with a hole, enide, aluminum antimonide, gallium nitride, gallium phos it can form an excited State pair, called an exciton, which can phide, gallium arsenide, gallium antimonide, indium nitride, quickly release the energy as photons of light. Conversely, indium phosphide, indium arsenide, indium antimonide, thal when a light of an appropriate wavelength is applied to a lium nitride, thallium phosphide, thallium arsenide, thallium photovoltaic structure, photons are absorbed by the mol antimonide, lead sulfide, lead selenide, or lead telluride. ecules, form excitons. The charges of the exciton can sepa 0014. In some embodiments, the light absorbing device rate, moving toward opposite electrodes, thereby establishing can be a photovoltaic. In other embodiments, the light emit a Current. ting device can be a light emitting diode. 0015. In another aspect, a light absorbing device can SUMMARY include a plastic Substrate and a conductive polymer coating on a surface of the Substrate. In some embodiments, the 0004 Semiconductors on common fiber-based papers and substrate can be flexible. ultrathin plastics can be lightweight and foldable for storage 0016. In some embodiments, the surface of the substrate and portability, easily shaped for three-dimensional applica can include a plurality of functional groups. The conductive tions, cut to size with Scissors or tornby hand, and compatible polymer can interact with the plurality of functional groups. with roll-to-roll manufacturing. However, such Substrates can The conductive polymer can form a covalent bond with the be easily damaged by common processing agents such as plurality of functional groups. Solvents, plasmas, or heat. Advantageously, a conductive 0017. In some embodiments, the polymer coating can polymer coating can be deposited on a Substrate that can include monomeric units derived from optionally substituted include a textured Surface. thiophenes, optionally Substituted pyrroles or optionally Sub 0005. In one aspect, a light absorbing or emitting device stituted anilines. The polymer coating can include poly(3,4- can include a Substrate with a textured Surface and a conduc ethylenedioxythiophene). The polymer coating can include at tive polymer coating on a surface of the Substrate. least one dopant. 0006. In another aspect, a method of making a light 0018. In some embodiments, the light absorbing device absorbing or light emitting device can include providing a can further include an electrode and an energy converting plastic or textured Substrate including a conductive polymer region capable of converting energy between photoenergy on a Surface of the Substrate and depositing an energy con and electric energy. Verting region capable of converting energy between photo 0019. In some embodiments, the polymer coating can be energy and electric energy on the Substrate. an anode and the electrode can be a cathode. 0007. In some embodiments, the textured surface can be 0020. In some embodiments, the energy converting region porous or fibrous. In certain circumstances, the Substrate can can include copper phthalocyanine, fullerene-Co or batho be paper or cloth. cuprine. In some embodiments, the energy converting region 0008. In some embodiments, the substrate can be flexible. can include poly(p-phenylene vinylene), polyfluorene, poly 0009. In some embodiments, the polymer coating can be (fluorenylene ethynylene), poly(phenylene ethynylene), conformal to the surface of the substrate. polyfluorene vinylene, or polythiophene. In some embodi 0010. In some embodiments, the polymer coating can ments, the energy converting region can include at least one include monomeric units derived from optionally substituted material selected from the group consisting of silicon, copper thiophenes, optionally Substituted pyrroles or optionally Sub indium diselenide, Zinc oxide, Zinc sulfide, Zinc selenide, Zinc stituted anilines. In some circumstances, the polymer coating telluride, cadmium oxide, cadmium Sulfide, cadmium US 2011/03 15204 A1 Dec. 29, 2011 Selenide, cadmium telluride, magnesium oxide, magnesium 0043 FIG. 9 illustrates exemplary configurations includ Sulfide, magnesium selenide, magnesium telluride, mercuric ing a conducting material. oxide, mercuric sulfide, mercuric selenide, mercuric tellu ride, aluminum nitride, aluminum phosphide, aluminum ars DETAILED DESCRIPTION enide, aluminum antimonide, gallium nitride, gallium phos 0044) There is a need for development of conducting poly phide, gallium arsenide, gallium antimonide, indium nitride, mers deposited directly on Substrates that are inexpensive, indium phosphide, indium arsenide, indium antimonide, thal widely available, and compatible with high-throughput lium nitride, thallium phosphide, thallium arsenide, thallium manufacturing. In addition, conducting polymers, for antimonide, lead sulfide, lead selenide, or lead telluride. example in photovoltaics, on common paper, plastic, or fiber 0021. In some embodiments, the light absorbing device Substrates could be seamlessly integrated into existing prod can be a photovoltaic. ucts (e.g. wall paper, window curtains, newspapers, clothing, 0022. Other embodiments are within the claims. etc.). Existing synthesis techniques for conducting polymers BRIEF DESCRIPTION OF THE DRAWINGS can preclude their deposition on Some Substrates like paperor on top of other materials that are incompatible with solutions 0023 FIG.