2015 IEDM Conference Proceedings For More Information Social Networks: IEDM Online: ieee-iedm.org ieee-iedm.org/social-media Table of Contents Intro .....................................................3 Committees ...........................................3 Topics of Interest ....................................7 Program: Tutorials ................................................8 Short Courses ........................................8 Plenary Session ......................................9 Focus Session ........................................9 Technical Program ................................10 IEDM Luncheon ....................................11 Panel Discussion ..................................11 Entrepreneur’s Luncheon ........................11 Abstracts, Bios for Tutorials, Short Courses & Technical Program ......................Appendix 2020 IEEE International Electron Devices Meeting 2 Intro IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the fl agship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. Digital & Social Media •LinkedIn: https://www.linkedin.com/groups/7475096/ •Twitter: https://twitter.com/ieee_iedm •Facebook: https://www.facebook.com/IEEE.IEDM •YouTube: https://www.youtube.com/channel/UC9X-8YPHtsy3SMQwU0yZdTg •Wikipedia: https://en.wikipedia.org/wiki/International_Electron_Devices_Meeting Committees Executive Committee General Chair Tutorial Chair European Arrangements John Suehle Ken Rim Co-Chair NIST Qualcomm Tibor Grasser Gaithersburg, MD San Diego, CA TU Wien Technical Program Chair Focus Session Chair Vienna, Austria Patrick Fay Barbara De Salvo European Arrangements University of Notre Dame CEA-LETI Co-Chair Notre Dame, IN Grenoble, France Merlyne de Souza Technical Program Vice Publicity Chair University of Sheffi eld Sheffi eld, UK Chair Mariko Takayanagi Stefan De Gendt Toshiba Conference Managers imec Tokyo, Japan Phyllis Mahoney Leuven, Belgium Publicity Vice Chair Widerkehr and Associates Montgomery Village, MD Publications Chair Martin Giles Suman Datta Intel Penn State University Hillsboro, OR Polly Mahoney University Park, PA Widerkehr and Associates Asian Arrangements Montgomery Village, MD Short Course Chair Co-Chair Satoru Yamada Masakazu Kanechika Samsung Electronics Co., Ltd. Toyota Gyeonggi-Do, Korea Aichi, Japan Short Course Vice Chair Asian Arrangements Michael Wu Co-Chair Taiwan Semiconductor Manufacturing Tian-Ling Ren Company Tsing-hua University Hsinchu, Taiwan Beijing, China 2020 IEEE International Electron Devices Meeting 3 Circuit and Device Su Jin Ahn TU Delft Interaction Committee Samsung Electronics Delft, The Netherlands Gyeonggi-do, Korea Shyh-Horng Yang, Chair Rihito Kuroda TSMC, Hsinchu, Taiwan Alain Bravaix Tohoku University ISEN Toulon Miyagi, Japan Meng-Fan (Marvin) Chang Toulon, France National Tsinghua University John Kymissis Hsinchu, Taiwain Mikael Casse Columbia University CEA-Leti New York, NY Shashank Ekbote Grenoble, France Qualcomm Assaf Lahav San Diego, CA Tzu-Hsuan Hsu Tower Semiconductor Macronix Migdal Haemek, Israel Jan Hoentschel Hsinchu, Taiwan GLOBALFOUNDRIES Jack Luo Dresden, Germany Jungwoo Joh Zhejiang University Texas Instruments Hangzhou, China John Hu Dallas, TX Nvidia Tetsu Morooka Santa Clara, CA Patrick Justison Toshiba Corporation GLOBALFOUNDRIES Kawasaki, Japan Ru Huang Clifton Park, NY Peking University Tina Ng Beijing, China Ziyuan Liu Parc Research The University of Tokyo Palo Alto, CA Yves Laplanche Kanagawa, Japan ARM Francois Roy Grenoble, France Souvik Mahapatra STMicroelectronics IIT Bombay Crolles, France Koji Nii Mumbai, India Renesas Soren Steudel Tokyo, Japan Steven Ramey imec Intel Leuven, Belgium Shigenobu Maeda Hillsboro, OR Samsung Taku Umebayashi Gyeonggi-do, Korea Guido Sasse Sony NXP Kanagawa, Japan Curtis Tsai Nijmegen, The Netherlands Intel Ching-Chun Wang Hillsboro, OR Deora Shweta TSMC SEMATECH Tainan City, Taiwan Maarten Vertregt Cohoes, NY NXP Memory Technology Eindhoven, The Netherlands James Stathis Committee IBM Research Yoosang Hwang,Chair Robert Wu Yorktown Heights, NY Samsung Broadcom Display and Imaging Gyeonggi-do, Korea Susan Wu Systems Ludovic Goux Xilinx David James Gundlach, Chair imec San Jose, CA NIST Leuven, Belgium Characterization, Reliability Gaithersburg, MD and Yield Committee Anquan Jiang Seth Banks Fudan University Ben Kaczer, Chair UT Austin Shanghai, China imec Austin, TX Leuven, Belgium Hiroki Koike Ryoichi Ishihara Tohoku University Miyagi, Japan 2020 IEEE International Electron Devices Meeting 4 Tao-Cheng Lu Gengchiau Liang Chen-Hsin Lien Macronix International Co., LTD. National University Singapore National Tsing Hua Univ. Hsinchu, Taiwan Singapore Hsinchu, Taiwan Jea-Gun Park Roza Kotlyar Junhee Lim Hanyang University Intel Samsung Seoul, Korea Gyeonggi-do, Korea Haitao Liu Luca Perniola Micron Technology Wie Lu CEA-LETI Boise, ID University of Michigan Grenoble, France Ann Arbor, MI Blanka Magyari-Kope Guiseppina Puzzili Stanford University Matthias Passlack Micron Stanford, CA TSMC Boise, ID Leuven, Belgium Susanna Reggiani Abu Sebastian Bologna University Andreas Schenck IBM-Zurich Bologna, Italy ETHZ Rushlikon, Switzerland Zurich, Switzerland Denis Rideau Pawan Singh STMicroelectronics Shinichi Takagi Spansion Crolles, France Univ. of Tokyo Sunnyvale, CA Tokyo, Japan John Robertson Joseph (Zhong) Wang Cambridge University Katsuhiro Tomioka Qualcomm Cambridge, UK Hokkaido University San Diego, CA Hokkaido, Japan Shigeyaso Uno Joshua Yang Ritsumeikan University Process and Manufacturing University of Massachusetts Shiga, Japan Technology Committee Amherst, MA Dina Triyoso, Chair Chung-Cheng Wu Globalfoundries Paola Zuliani TSMC Malta, NY STMicroelectronics Hsinchu, Taiwan Agrate Brianza, Italy Nano Device Technology Salih Muhsin Celik Modeling and Simulation Globalfoundries Committee Malta, NY Committee Kirsten Moselund, Chair Luca Larcher, Chair IBM Zurich Chorng-Ping Chang University of Modena Ruschlikon, Switzerland Applied Materials Reggio Emilia, Italy Santa Clara, CA Joerg Appenzeller Suman Banerjee Purdue University Masao Inoue Texas Instruments W. Lafayette, IN Renesas Electronics Corporation Dallas, TX Ibaraki, Japan David Esseni Katsumi Eikyu University of Udine Subhash Joshi Renesas Electronics Corp. Udine, Italy Intel Corporation Hyogo, Japan Hillsboro, OR Aaron D. Franklin Debdeep Jena Duke University Ilgweon Kim Cornell University Durham, NC Samsung Electronic Co., Ltd. Ithaca, NY Hwaseong-si, Korea Zoran Krivokapic Roza Kotlyar GLOBALFOUNDRIES Takahiro Kouno Intel Santa Clara, CA Socionext Inc. Hillsboro, OR Kanagawa, Japan Max Lemme Siegen Univ. Siegen, Germany 2020 IEEE International Electron Devices Meeting 5 Jong-Ho Lee Kazuhiro Mochizuki Carlotta Guiducci Seoul National Univ. Hitachi EPFL Seoul, Korea Ibaraki, Japan Lausanna, Switzerland Romy Liske Miura Naruhisa Tamio Ikehashi Fraunhofer IPMS-CNT Mitsubishi Electric Toshiba Dresden, Germany Hyogo, Japan Kawasaki, Japan Mariam Sadaka Serge Oktyabrsky Severine Le Gac SOITEC SUNY CNSE University of Twente Austin, TX Albany, NY Enschede, The Netherlands Seiji Samukawa Clemens Ostermaier Theresa S. Mayer Tohoku University Infi neon Technologies AG The Pennsylvania State University Sendai, Japan Villach, Austria University Park, PA Anabela Veloso Mark Rodwell Dimitrios Peroulis IMEC UC Santa Barbara Purdue University Leuven, Belgium Santa Barbara, CA West Lafayette, IN Maud Vinet David Sheridan Debbie Senesky CEA/Leti RFMD Stanford Univ. Grenoble, France Greensboro, NC Stanford, CA Power and Compound Michael Uren Naigang Wang Semiconductor Devices Univ. of Bristol IBM T.J. Watson Research Center Committee Bristol, UK Yorktown Heights, NY Gilbert Dewey, Chair Intel Corporation Marleen Vanhove Jianbin Xu Hillsboro, OR IMEC The Chinese University of Hong Kong Leuvenn, Belgium Hong Kong Kevin Chen Sensors, MEMs, and Itaru Yanagi Hong Kong Univ. of Science & Technology BioMEMS Committee Hong Kong Hitachi, Ltd. Yuji Miyahara, Chair Tokyo, Japan Lukas Czornomaz Tokyo Medical and Dental University IBM Tokyo, Japan Maryam Ziaie Moayed Ruschlikon, Switzerland Maxim Integrated Mirjana Banjevic San Francisco, CA Alex Kalnitsky Sensirion AG TSMC Zurich, Switzerland Hsinchu, Taiwan Nuria Barniol Matteo Meneghini Universite Autonoma de Barcelona Univ. of Padova Bellaterra, Spain Padova, Italy 2020 IEEE International Electron Devices Meeting 6 Topics of Interest CIRCUIT AND DEVICE INTERACTION (CDI) Papers are solicited in the areas of CMOS platform technology and circuit-device interactions. Topics include digital, analog and RF technology, device and circuit scaling issues, technology-circuit co-optimization, power-performance-area analysis, impact of future device structures on circuit design, circuit and architecture implication of interconnects, and manufacturability issues such as DFM and process control. Submission of papers covering device and design interactions in memory, logic, analog, and mixed-signal circuit issues such as technology variability, power constraints, physical layout effects and design complexity in memory, logic, analog, and mixed-signal circuits is