CONTENTS the National University of Singapore (NUS) and Nanyang Technological University (NTU)

CONTENTS the National University of Singapore (NUS) and Nanyang Technological University (NTU)

mrs-fcv3n4_draft.qxd 4/8/2010 6:54 PM Page 1 To spread information and knowledge and to promote collaboration in the area of Materials Research, Engineering and Technology amongst the members of MRS-S Vol 4 No. 4 April–June, 2010 | ISSN 1793-3609 ¾ MRS-S Activities: Past, Present and Future The Materials Research Society of Singapore (MRS-S) organized five International and four National Conferences in Singapore since 2001. The biennial 'International Conference on Materials for Advanced Technologies (ICMAT)' series were held in 2001, 2003, 2005, 2007 and 2009. The biennial National Conferences were held in 2004, 2006,2008 and 2010. MRS-S also sponsored/supported several other conferences, workshops, symposia and public lectures. It instituted gold medals for the best outgoing students in Materials Science at CONTENTS the National University of Singapore (NUS) and Nanyang Technological University (NTU). It instituted the 'MRS Singapore Student Bursary Fund' at the National MRS-S Activities: Past, Present University of Singapore. MRS-S also instituted the 'MRS-S Book Prize' at the 'Republic and Future Polytechnic' of Singapore. This yearly Book Prize will be awarded to the top final-year page 84... student from the 'Diploma in Materials Science'. Highlights of previous ICMAT Conferences To reach out to the public, MRS-S has organized number of public lectures by Nobel page 84... page 84... Laureates and also an Astronaut. Highlights of previous National Conferences page 84... The fourth National Conference on 'Advanced Materials' was held at IMRE (Institute of Materials Research & Engineering), Singapore during 17-19, March, 2010. This was Highlights of the Recent co-organized by MRS-S and IMRE. There were one Key Note Talk, 26 Invited Talks and Literature 137 Poster papers presented on almost all aspects of Materials Science and Technology. page 86... Seven Best Poster awards were selected by a committee, and were given away immediately after the Conference. Recent Books page 91... The ICMAT 2011 will be held in Singapore during June, 26-July1, 2011. Forthcoming Conferences page 104... Invitation to MRS-S Members page 108... © 2009 MRS-S, Singapore. All rights reserved. MRS-S OUTLOOK Volume 4 • No.4 • April–June, 2010 Highlights of Previous ICMAT Conferences MRS-S Executive Committee (For 2008–2010) Year 2001: 1-6, July 2001; 16 Symposia; 10 Plenary President Lectures; 4 Public Lectures by Nobel Laureates; 1400 B.V.R. Chowdari, NUS delegates; 18 Best Poster Awards; 36 Exhibitors. Founding President Year 2003: 7-12, Dec., 2003; 16 Symposia; 9 Plenary Shih Choon Fong, NUS Lectures; 2 Public Lectures by Nobel Laureates; 1500 Vice Presidents delegates; 19 Best Poster Awards ; 29 Exhibitors. Lim Seh Chun, NUS Year 2005: 3-8, July 2005; 25 Symposia; 9 Ple- Freddy Boey, NTU nary Lectures; 2 Theme Lectures; 3 Public Lectures Secretary by Nobel Laureates; 2200 Delegates; 28 Best Poster Chia Ching-Kean, IMRE Awards ; 43 Exhibitors. Joint Secretary Year 2007: 1-6, July 2007; 18+6 Symposia; 9 Ple- Feng Yuan Ping, NUS nary Lectures; 2 Theme Lectures; 2 Public Lectures Treasurer by Nobel Laureates; 2300 Delegates; 25 Best Poster Ding Jun, NUS Awards; 41 Exhibitors. Joint Treasurer Year 2009: 28 Jun.-3, July 2009; 23 Symposia, 9 Ple- Gregory Goh, IMRE nary and 3 Theme Lectures, 3 Public Lectures by Highlights of Recent Literature Members Nobel Laureates; 2170 Participants; 37 Best Poster Ramam Akkipeddi, IMRE Awards; 43 Exhibitors. Palani Balaya, NUS Liu Ai Qun, NTU Highlights of Previous National Conferences Liu Zishun, IHPC Joachim S. C. Loo, NTU Year 2004: 6 Aug., 2004; 20 Invited Talks; 130 Poster Lu Chun, NTU Papers; 4 Best Poster Awards . Daniel Pickard, NUS S. E. Valavan, Rep Poly Year 2006: 18-20,Jan., 2006; Includes the Symposium Andrew S. W. Wong, IMRE on ‘Physics and Mechanic of Advanced Materials’; 60 Yang Yi-Yan, IBN Invited Talks; 200 Poster Papers; 1 Public Lecture; 5 Honorary Auditors (2008–2009) Best Poster Awards. Shen Zexiang, NTU Year 2008: Feb., 25-27, 2008. Incorporated the MRS-I Teng Jinghua, IMRE Mumbai (India)-Chapter Joint Indo-Singapore Meet- NUS: National University of Singapore ing; 2 Keynote Talks, 60 Invited Talks; 211 Poster NTU: Nanyang Technological University, Singapore Papers; 10 Best Poster Awards. IBN: Institute of Bioengineering and Nanotechnology, Singapore Rep Poly: Republic Polytechnic, Singapore Year 2010: March, 17-19, 2010. 1 Keynote Talk, 26 IMRE: Institute of Materials Research & Engineering, Singapore Invited Talks; 137 Poster Papers; 7 Best Poster Awards. IHPC: Institute of High Performance Computing, Singapore MRS-S OUTLOOK (ISSN 1793-3609) is published quarterly by the Materials Research Society of Singapore (MRS-S), c/o Institute of Materials Research & Engineering, 3, Research Link, Singapore 117 602. Editor: G.V. Subba Rao. Disclaimer: Statements and opinions expressed in ‘MRS-S OUTLOOK’ are solely those of the authors, and do not reflect those of MRS-S, nor the editor and staff. Permissions: The subject matter contained in ‘MRS-S OUTLOOK’ can be freely reproduced for not-for-profit use by the readers; however, a word of acknowledgement will be appreciated. A Quarterly publication by the Materials Research Society of Singapore page 85 Volume 4 • No.4 • April–June, 2010 MRS-S OUTLOOK Highlights of Recent Literature (Contributed by the Editor) Observation of Molecular Orbital Gating. Unlike printed circuit boards made from fiber- glass, ceramics, or polyimides, however, paper can be The control of charge transport in an active electronic folded and creased (repeatedly), shaped to form three- device depends intimately on the modulation of the dimensional structures, trimmed using scissors, used to internal charge density by an external node. For exam- wick fluids (e.g., for microfluidic applications) and dis- ple, a field-effect transistor relies on the gated elec- posed of by incineration. Paper-based electronic cir- trostatic modulation of the channel charge produced cuits are thin and lightweight; they should be useful by changing the relative position of the conduction for applications in consumer electronics and packag- and valence bands with respect to the electrodes. In ing, for disposable systems for uses in the military and molecular-scale devices, a longstanding challenge has homeland security, for applications in medical sens- been to create a true three-terminal device that operates ing or low-cost portable diagnostics, for paper-based in this manner (that is, by modifying orbital energy). microelectromechanical systems, and for applications Here, Song et al. [1] report the observation of such involving textiles. Highlights of Recent Literature a solid-state molecular device, in which transport cur- rent is directly modulated by an external gate voltage. Reference Resonance-enhanced coupling to the nearest molecular 1. A. C. Siegel, S. T. Phillips, M. D. Dickey, N. Lu, Z. Suo orbital is revealed by electron tunnelling spectroscopy, and G. M. Whitesides, Adv. Funct. Mater., 20 (1), 28-35 demonstrating direct molecular orbital gating in an (2010). electronic device. The authors state that, ‘Our find- ings demonstrate that true molecular transistors can be A Tricyclic Aromatic Isomer of created, and so enhance the prospects for molecularly Hexasilabenzene. engineered electronic devices’. Benzene represents the showcase of H¨uckel aromatic- Reference ity. The silicon analog, hexasilabenzene, has conse- quently been targeted for decades. Presently, Abers- 1. H. Song, Y. Kim, Y. H. Jang, H. Jeong, M. A. Reed and felder et al. [1] report the synthesis and characteriza- T. Lee, Nature, 462, 1039-1043 (2009) (Dec., 24 Issue). tion of an intensely green isomer of Si6R6 (R being 2,4,6-triisopropylphenyl) with a tricyclic structure in the solid state featuring silicon atoms with two, one, Foldable Printed Circuit Boards on Paper and no substituents outside the ring framework. Substrates. The highly dispersed29 Si NMR shifts in solution Siegel et al. [1] describe several low-cost methods ranging from +125 to -90ppm indicate an inhomoge- for fabricating flexible electronic circuits on paper. neous electron distribution due to the dismutation of The circuits comprise, i) metallic wires (e.g., tin or formal oxidation numbers as compared with that of zinc) that are deposited on the substrate by evapora- benzene. tion, sputtering, or airbrushing, and ii) discrete surface- Theoretical analysis reveals nonetheless the cyclic mountable electronic components that are fastened delocalization of six mobile electrons of the π-, σ-, and with conductive adhesive directly to the wires. These non-bonding type across the central four-membered electronic circuits - like conventional printed circuit ring. For this alternative form of aromaticity, in prin- boards -can be produced with electronic components ciple applicable to many H¨uckel aromatic species, the that connect on both sides of the substrate. authors propose the term dismutational aromaticity. page 86 A Quarterly publication by the Materials Research Society of Singapore MRS-S OUTLOOK Volume 4 • No.4 • April–June, 2010 Reference of 100 GHz for a gate length of 240 nm. They found that the high-frequency performance of these epitax- 1. K. Abersfelder, A. J. P. White, H. S. Rzepa and D. Scheschkewitz, Science, 327 (No. 5965), 564 - 566 ial graphene transistors exceeds that of state-of-the- (2010) (Jan., 29 Issue). art silicon transistors of the same gate length, thereby demonstrating the high potential of graphene for elec- tronics applications. Broken rotational symmetry in the pseudogap phase of a high-T c superconductor. Reference 1. Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, The nature of the pseudogap phase is a central prob- D. B. Farmer, H.-Y. Chiu, A. Grill and Ph. Avouris, Sci- lem in the effort to understand the high-transition- ence, 327 (No. 5966), 662 (2010) (Feb., 5 Issue). temperature (high-Tc) copper oxide superconductors. A fundamental question is what symmetries are broken when the pseudogap phase sets in, which occurs when Water Freezes Differently on Positively and the temperature decreases below a value T*.

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