Lakehead University Knowledge Commons,http://knowledgecommons.lakeheadu.ca Electronic Theses and Dissertations Electronic Theses and Dissertations from 2009 2014-12-11 Gallium nitride, indium nitride, and heterostructure development using the MEAglow growth system Binsted, Peter W. http://knowledgecommons.lakeheadu.ca/handle/2453/575 Downloaded from Lakehead University, KnowledgeCommons Gallium Nitride, Indium Nitride, and Heterostructure Development Using The MEAglow Growth System A thesis presented by Peter W. Binsted to The Faculty of Science and Environmental Studies in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Chemistry and Materials Science Lakehead University Thunder Bay, Ontario June 2014 Gallium Nitride, Indium Nitride, and Heterostructure Development Using The MEAglow Growth System Peter W. Binsted Thesis Advisor: Dr. Dimiter Alexandrov, Dr. Alla Reznik Abstract This thesis presents an in depth study of semiconductor development using a new process termed Migration Enhanced Afterglow (MEAglow). The MEAglow growth reactor is housed in the Lakehead University Semiconductor Research Lab. Thin films of gallium nitride and indium nitride are produced as well as heterostructures comprised of these two films and their ternary alloy InGaN. MEAglow is a form of plasma enhanced chemical vapour deposition (PECVD) employing migration enhanced epitaxy (MEE). The heterostructure is being developed for a novel field effect transistor (FET) based on the tunnelling of charge carriers which alter the channel conductivity. The configuration of this unique III-Nitride device should allow the FET to function as normally off in either n-type or p-type operation. Due to the difficulties in growing low temperature GaN, test devices of this abstract design were not previously possible. Further details on the device operation and growth parameters are included. Samples produced by the research reactor were characterised through x-ray diffraction (XRD), ultraviolet-near infrared-visible spectroscopy (UV-Vis-NIR), Auger spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). i Film growth is accomplished by an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD). The reactor features a scalable hollow cathode type plasma source. Data obtained through characterisation is subjected to theoretical treatment which explains much not previously understood behaviour of the GaN films. Many challenges in III-Nitride film growth have been overcome during this research project. A method of developing structures consisting of InN and GaN within the same system has been proven. (c) Peter W. Binsted 2014 ii Ta bl e o f Co n te nts List of Figures .................................................................................................................... ix List of Tables ................................................................................................................... xiv Chapter 1 Introduction ........................................................................................................ 1 1.1. Group III-V Semiconductors................................................................................ 4 1.2. Materials of Interest ............................................................................................. 6 1.2.1. Gallium ......................................................................................................... 6 1.2.2. Indium ........................................................................................................... 7 1.2.3. Aluminium .................................................................................................... 7 1.2.4. Nitrogen ........................................................................................................ 8 1.3. Conclusion............................................................................................................ 8 Chapter 2 Review of Thin Film Deposition...................................................................... 11 2.1. Overview ............................................................................................................ 11 2.1.1. Challenges in III-Nitride Film Growth ....................................................... 12 2.2. Methods of Thin Film Production ...................................................................... 14 3 2.2.1. Physical Vapour Deposition ....................................................................... 14 2.2.2. Chemical Vapour Deposition...................................................................... 14 2.2.3. Comparison of Growth Methods ................................................................ 15 2.2.4. MBE ............................................................................................................ 15 2.2.5. MOCVD...................................................................................................... 17 2.2.6. PECVD ....................................................................................................... 18 2.2.7. MEAglow.................................................................................................... 18 2.2.8. MOVPE....................................................................................................... 19 2.3. Precursors ........................................................................................................... 20 2.3.1. Trimethylgallium (TMG) ............................................................................ 21 2.3.2. Trimethylindium (TMI) .............................................................................. 21 2.3.3. Trimethylaluminium (TMA)....................................................................... 22 2.3.4. Magnesium.................................................................................................. 22 2.4. Plasma ................................................................................................................ 22 2.4.1. Definition of a Plasma ................................................................................ 23 2.4.2. Advantages of Using a Plasma ................................................................... 24 2.4.3. Plasma Application in Film Deposition Systems........................................ 24 2.4.4. Types of Plasmas ........................................................................................ 25 2.5. Buffer Layers...................................................................................................... 32 2.6. Growth Regimes................................................................................................. 33 4 2.7. Nitridation .......................................................................................................... 34 2.8. Sample Preparation ............................................................................................ 34 2.9. Substrates ........................................................................................................... 35 2.9.1. Silicon (Si) .................................................................................................. 36 2.9.2. Sapphire ...................................................................................................... 36 2.9.3. Silicon Carbide (SiC) .................................................................................. 36 Chapter 3 Compounds of Interest ..................................................................................... 37 3.1. Review of III-Nitrides ........................................................................................ 37 3.2. Gallium Nitride .................................................................................................. 39 3.3. Indium Nitride .................................................................................................... 40 3.4. Aluminum Nitride .............................................................................................. 41 Chapter 4 Single Film and Heterostructure Film Growth by MEAglow .......................... 43 4.1. Introduction ........................................................................................................ 43 4.1.1. The MEAglow Reactor ............................................................................... 43 4.1.2. The Gas Delivery System ........................................................................... 46 4.2. Operation of the MEAglow Reactor .................................................................. 47 4.2.1. Temperature Calibration ............................................................................. 47 4.2.2. Chamber Preparation .................................................................................. 48 4.2.3. Sample Loading .......................................................................................... 49 4.2.4. Program Operation ...................................................................................... 49 5 4.2.5. Sample Extraction ....................................................................................... 54 4.3. Gallium Nitride Film Growths ........................................................................... 54 4.3.1. General Gallium Nitride Growth ................................................................ 55 4.3.2. GaN Grown Under Various Nitrogen Flux................................................. 58 4.3.3. GaN Buffer Layers.....................................................................................