Short-Range Order of Germanium Selenide Glass

Short-Range Order of Germanium Selenide Glass

Bull. Mater. Sci., Vol. 38, No. 1, February 2015, pp. 111–117. c Indian Academy of Sciences. Short-range order of germanium selenide glass A H MOHARRAM∗ Rabigh College of Science & Arts, King Abdulaziz University, Rabigh 21911, Saudi Arabia MS received 29 November 2013; revised 14 April 2014 Abstract. Chalcogenide Ge20Se80 glass was prepared using the melt-quench technique. The radial distribution function is obtained from X-ray diffraction data in the scattering vector interval 0.28≤K≤ 6.87 Å−1.ReverseMonte Carlo (RMC) simulations are useful to compute the partial pair distribution functions, gij (r), partial structure fac- tors, Sij (K), and total structure factor. Values of r1/r2 ratio and bond angle () indicate that Ge(Se1/2)4 tetrahedra units connected by chains of the chalcogen atoms are present. The partial structure factors have shown that homopo- lar Ge–Ge and Se–Se bonds are behind the appearance of the first sharp diffraction peak (FSDP) in the total structure factor. Tetrahedral Ge(Se1/2)4 structural units connected by Se–Se chains have been confirmed by the simulated values of the partial coordination numbers and bond angle distributions. Finally, Raman spectra mea- surements have strongly supported the conclusions obtained either from the calculated Fourier data or from RMC simulations. Keywords. Chalcogenides; X-ray diffraction; short-range order; medium-range order; reverse Monte Carlo simulation. 1. Introduction demonstrated that besides the well-established SRO informa- tion, a pre-peak appeared in the total structure factor, S(K), Chalcogenide glasses present a great potential for applica- at a scattering vector K of about 1.1Å−1. The pre-peak, tion in technological devices, such as optical fibers, memory being a clear evidence for the existence of the IRO, showed materials and switching devices, but their use is limited due a systematic decrease in intensity and shift towards higher K to several factors. One of them is the difficulty in obtain- values with the decrease in Ge concentration. A similar result ing information about atomic structures. The structure of was observed using the neutron diffraction measurement.5 In 13 chalcogenide glasses in the short-range order (SRO) or recent times, the sorption ability of Ge20Se80 thin films, intermediate-range order (IRO) is an important and contro- applied as active layers of quartz crystal microbalance for versial subject. The appearance of the first sharp diffraction NO2 gas sensing, has been investigated. It was found that the peak (FSDP) in the total structure factor indicates the introduced gas molecules interact electrostatically with the presence of IRO. Germanium selenides have been inten- chalcogen atoms of the host material and initiate some degree sively studied by several methods like X-ray diffraction,1–4 of structural changes in it. neutron diffraction,5,6 Raman scattering,7 anomalous Reverse Monte Carlo (RMC) simulation14,15 represents, X-ray scattering8 and extended X-ray absorption fine when used carefully, a powerful tool to extract some infor- 9 structure. The structure unit in these glasses is Ge(Se1/2)4 mation of intermediate and extended-range scale in glassy tetrahedra connected through Se chains. materials. It assembles three-dimensional atomic configura- As mentioned earlier,10 the addition of germanium into the tions using the experimental diffraction data implicitly in the polymeric Se matrix produces a cross-linking of selenium simulation. The intimate connection between computational chains, mediated by the formation of Ge(Se1/2)4 tetrahedra. and experimental processes means that the better quality and At low doping (x<15 at%), the tetrahedra are sparsely higher resolution of the experimental data, the more reliable distributed in the background matrix, with rather flexible RMC model of a network structure for vitreous materials. interconnections. The feeble Ge–Ge correlations are inade- RMC method is an inverse problem in which the experimen- quate to give any detectable FSDP, as it was previously con- tal data are enforced to build atomic configurations that have 11 cluded from the partial pair structure studies on GeSe2. the desired structural and electronic properties. The main When germanium content reaches 15 at%, the amount of point is to set up a generalized function containing as much Ge atoms becomes sufficient to join some of the tetrahedral information as possible, and then optimize the function for pairs by corner sharing.12 X-ray diffraction (XRD) of the generating configurations toward exact agreement with the 1,8 glassy Gex Se1−x (with 0 ≤ x ≤ 0.33) systems have experimental data. The present paper aims to get the structural correla- ∗ Author for correspondence ([email protected], tions of the investigated Ge20Se80 glass either from Fourier [email protected]) transformation or from RMC simulations. It is intended to 111 112 A H Moharram confirm the coincidence between the obtained results of both is allowed to rearrange in such a way that its energy is min- methods. Finally, Raman spectroscopy analysis could imized. The RMC does not need the inter-atomic potentials strengthen the obtained conclusions. and the structural configuration is adjusted so as to mini- mize instead the difference between the calculated diffraction pattern and that measured experimentally.20 2. Theoretical background Three-dimensional arrangement of N atoms is placed into a cubic cell with periodic boundary conditions. The atomic Conventional (Fourier) method 2.1 number density (ρ) should be the same as the experimental value. The positions of the atoms are chosen randomly. The According to Faber and Ziman,16 the total structure factor, partial pair distribution function15,21 can be calculated from S(K), is obtained from the normalized coherent scattered the initial configuration by intensity, Ic(K), through 2 2 Co nij (r) Ic(K) − (f (K)−f(K) ) g (r) = , (4) S(K) = , (1) ij 4πr2drρc f(K)2 i where the superscripts C and o mean ‘calculated’ and ‘old’, where K = 4π(sin θ/λ) is the transferred momentum, respectively, c is the concentration of atoms type i and n (r) f 2 = (c f )2 and f 2= c f 2, where c is the i ij i i i i i i i is the average number of atoms type j located at distance atomic fraction of element i and f(K)the atomic scattering between r and r+ dr from a central atom of type i. Fourier factor. transform of gCo(r) to reciprocal space yields the partial Fourier transformation of the S(K) data into real space17 ij static structure factor gives the reduced distribution function, G(r), as follows: ∞ ∞ sin Kr Co = 2 Co − = [ − ]= [ − ] Sij (K) ρ 4πr (gij (r) 1) dr, (5) G(r) 4πr ρ(r) ρo (2/π) K S(K) 1 Kr 0 0 × M(K)sin(Kr) dK, (2) where K (= 4πsin θ/λ) is the momentum transfer. The total structure factor is calculated as follows: where ρ(r) is the local atomic density at a distance r, ρo the bulk atomic density and M(K) is called the damping SCo(K) = c c f (K)f (K)(SCo(K) − 1), (6) 17,18 ≤ i j i j ij factor. At short distances (r 2 Å), see Equation (2), i,j G(r) should follow the density line (−4πrρo) which is used as a quality check of the data. The radial distribution func- where fi (K) is the atomic scattering factor of atom type tion, defined as the number of atoms lying at distances i. The difference between the experimental total structure between r, r+ dr from center of an arbitrary origin atom, is factor, SE(K), and that calculated from the configuration is given by given by = 2 = + 2 m RDF(r) 4πr ρ(r) rG(r) 4πr ρo. (3) 2 = Co − E 2 2 χo (S (Ki ) S (Ki )) /σ (Ki ), (7) The positions of the first and the second peak in the RDF(r) i=i represent the average values of the first- and second-nearest- where the sum is taken over the m experimental points and neighbor distances r1 and r2, respectively. A knowledge σ represents the experimental error. One atom moves at ran- = of both distances yields a value for the bond angle dom but if it approaches another atom closer than the cut-off −1 5 2sin (r2/2r1). The area under each peak gives the corre- distance, the move is rejected. Otherwise, a new atom is cho- sponding coordination number. sen with acceptable move. Then, the new values of the par- tial pair distribution functions, partial structure factors and 2.2 Reverse Monte Carlo method the total structure factor can be calculated. The new value of SCn(K) gives a new difference In the structural analysis using Fourier transformations,17,19 m a modification factor was suggested to reduce the effect of χ 2 = (SCn(K ) − SE(K ))2/σ 2(K ), (8) termination data at a finite K . This factor in turn, while n i i i max i=i reduces the spurious oscillations, leads to a broadening of 2 2 the genuine peaks in g(r). The broadening is wide enough to where n means ‘new’. If χn <χo , the move is accepted 2 2 cause an overlap between the first and second peaks, and con- and the new configuration becomes the old one. If χn >χo , − 2 − 2 sequently introduces significant errors in the obtained struc- it is accepted with probability exp( (χn χo )/2). Other- tural parameters. One of the main difficulties in the study wise it is rejected. As the number of accepted atom moves of glasses and other disordered materials is the production increases, χ 2 will initially decrease until it reaches an equi- of structural models that agree quantitatively with diffraction librium value.

View Full Text

Details

  • File Type
    pdf
  • Upload Time
    -
  • Content Languages
    English
  • Upload User
    Anonymous/Not logged-in
  • File Pages
    7 Page
  • File Size
    -

Download

Channel Download Status
Express Download Enable

Copyright

We respect the copyrights and intellectual property rights of all users. All uploaded documents are either original works of the uploader or authorized works of the rightful owners.

  • Not to be reproduced or distributed without explicit permission.
  • Not used for commercial purposes outside of approved use cases.
  • Not used to infringe on the rights of the original creators.
  • If you believe any content infringes your copyright, please contact us immediately.

Support

For help with questions, suggestions, or problems, please contact us